CN110428973A - A kind of 3D body micro-silicon capacitor based on MEMS technology, its production and application - Google Patents
A kind of 3D body micro-silicon capacitor based on MEMS technology, its production and application Download PDFInfo
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/005—Bulk micromachining
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/08—Housing; Encapsulation
- H01G9/10—Sealing, e.g. of lead-in wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/26—Structural combinations of electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices with each other
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Electric Double-Layer Capacitors Or The Like (AREA)
Abstract
The invention discloses a kind of production methods of 3D body micro-silicon capacitor, production including 3D body silicon substrate structure, suitable for the introducing of the 3D structure-activity material and three kinds of encapsulation of capacitor and integrated.Firstly, deep silicon etching obtains the 3D silicon substrate comb teeth substrate of hollow out, then carbon-based conductive layer and active material are coated to the upper and lower surface and side wall of comb teeth, finally applies gelated electrolyte on surface, and be packaged and integrate, obtain the 3D body micro-silicon capacitor.Relative to traditional interdigitated electrode structure planar structure, the longitudinal direction of button capacitor electrode provided by the invention is highly extended, available electrode surface area extends to three-dimensional surface and longitudinal side wall from two-dimensional surface, 3D electrode can load more active materials, so that specific capacitance and specific energy density be made to be promoted；And the active material introducing method of 3D comb structure is significant to the research of 3D capacitor, the encapsulation of proposition and integrated approach ensure that stabilization and the service life of capacitor.
Description
Technical field
The invention belongs to the manufacturing methods of miniature energy storage device, prepare in particular to micro-nano technology technique and nano material
With applied technical field, more particularly, to a kind of 3D body micro-silicon capacitor based on MEMS technology, its production and apply.
Background technique
The fast development of mobile electronic device makes miniaturization, becomes research hotspot convenient for integrated power supply, this
Energy storage device can be in the density for increasing device, while realizing function of supplying power, moreover it is possible to integrated chip, it is whole to simplify system
Body structure.Supercapacitor becomes and draws since it has high-energy density, cycle efficieny and charge and discharge ratio relative to battery
The energy accumulator that people attractes attention.Traditional supercapacitor volume for microdevice is too big, and traditional production side
Method and microelectronics manufacture craft are incompatible.In view of being miniaturized and reducing the factors such as system complexity, a kind of energy and micro- device are designed
The integrated energy storage device of part becomes a focus on research direction.
Button capacitor developed recently is rapid, and while size continues miniatureization, power density and energy density have
It is obviously improved.Button capacitor can be fabricated to the membrane electrode of traditional sandwich structure, core-shell structure fibrous electrodes or
Person's plane interdigitated electrode structure.Using this new energy storage device as independent power supply and the integrated tool of micro mechanical system
There is broad prospect of application.
Wherein, the design of planar electrode array, than traditional sandwich structure and fibrous structure, performance is more superior.It is first
First, due to the small gap between electrode interdigitated array, and diaphragm is eliminated, in electrode interior, the transmission of electrolyte intermediate ion
Resistance can significantly reduce, and can obtain high frequency response, to promote its power density, this is for following miniature portable electricity
It is most important for sub- device.Secondly, plane electrode can make micron order electrode structure, miniature polarizing electrode battle array by photoetching process
Column, and it is high to control precision, then can further be promoted by the introducing of active material, electrode surface area and capacitive property；Finally, flat
It is integrated with IC chip that face electrode structure is easier to button capacitor.
In order to promote the whole energy storage characteristic of button capacitor, 3D structure is currently a kind of effective means, is based on plane
The advantage of electrode, 3D structure can be loaded more living using the extension of longitudinal height in same accounting area in structure side wall
Property material, increases the energy storage capability of button capacitor.The 3D comb structure of contemporary literature report, after the storied length of material pile,
For thickness in several hundred nanometers to several microns, the surface area and load quality of active material are limited, cause capacitor storage and specific energy close
Degree is insufficient for demand.
Summary of the invention
Aiming at the above defects or improvement requirements of the prior art, the present invention provides a kind of 3D bodies based on MEMS technology
Micro-silicon capacitor, it makes and application, has horizontal surface by being obtained on silicon-based substrate surface by deep etching and indulges
To the electrode substrate of side wall, carbon-based conduction material is successively coated in the horizontal surface of the electrode structure substrate and the surface of longitudinal side wall
Material and active material, coated electrolyte post package obtain 3D body micro-silicon capacitor, thus solve existing 3D body minisize capacitor
The limited technical problem of the whole stored energy capacitance of device device.
To achieve the above object, according to one aspect of the present invention, a kind of production of 3D body micro-silicon capacitor is provided
Method includes the following steps:
(1) array pattern is made by photoetching process on silicon-based substrate surface, is performed etching according to the array pattern, etched
Substrate is penetrated, the 3D body silicon electrode of hollow out is obtained；
(2) hydrophilic treated is carried out to the 3D body silicon electrode that step (1) obtains, so that the electrode surface has hydrophily,
Obtain that there is hydrophilic 3D body silicon electrode；
(3) frame part in the 3D body silicon electrode obtained to step (2) for electrical connection carries out exposure mask, to unmasked
Partial electrode surface carries out the cladding of carbon-based conductive layer, obtains the 3D carbon silicon combination electrode for being coated with carbon-based conductive layer；
(4) electrode surface of the 3D carbon silicon combination electrode for being coated with carbon-based conductive layer obtained in step (3) coats activity
Material obtains the 3D carbon silicon combination electrode for being coated with active material；
(5) exposure mask of the removal frame part for electrical connection, by the 3D carbon silicon combination electrode be packaged with
It is integrated, obtain the 3D body micro-silicon capacitor；
Wherein the electrode surface had both included the horizontal surface of the electrode structure, also included by etching obtained vertical table
Face.
Preferably, the 3D body silicon electrode structure is comb teeth-shaped.
Preferably, step (3) carries out the cladding of carbon-based conductive layer by the following method:
Carbon group compound presoma is dissolved in volatile solvent by (3-1), obtains precursor solution；
The 3D body silicon electrode is placed in the precursor solution by (3-2), by hydro-thermal method in the electrode surface packet
Cover carbon-based conductive layer；The carbon group compound presoma is hydrocarbon.
Preferably, step (3) carries out the cladding of carbon-based conductive layer by the following method:
Carbon group compound presoma is dissolved in volatile solvent by (3-1), obtains precursor solution；
The 3D body silicon electrode is placed in the precursor solution by (3-2), is taken out after infiltration, passes through chemical gas after drying
Phase sedimentation makes the presoma form carbon-based conductive layer in the electrode surface reduction decomposition, and the presoma is nytron
Object.
Preferably, the carbon-based conductive layer be carbon nanotube or graphene nano structure, step (3) by the following method into
The cladding of row carbon-based conductive layer:
(3-1) passes through electron beam evaporation deposition, magnetron sputtering plating, thermal evaporation plated film, chemical vapor deposition, atomic layer deposition
Product, sol-gal process, hydro-thermal method or galvanoplastic successively coat buffer layer and Catalytic Layer in the electrode surface；
(3-2) using plasma enhances chemical vapor deposition or chemical vapor deposition, successively coated buffer layer and
The electrode surface deposition of carbon nanotubes or the carbon-based conductive layer of graphene nano structure of Catalytic Layer；
Wherein, the buffer layer avoids the Catalytic Layer from penetrating into substrate for completely cutting off Catalytic Layer and electrode substrate；It is described
Catalytic Layer is used for catalyzing carbon nanotube or graphene growth.
Preferably, step (4) coats active material to electrode surface specifically:
(4-1) carries out hydrophilic treated to step (3) the 3D carbon silicon combination electrode, specifically: by the electrode plasma
Body oxygen cleaning technique carries out surface hydrophilic processing using Pirahan；
(4-2) is to the electrode surface growth activity material after the hydrophilic treated.
Preferably, the active material is single nano material or composite nano materials, and the active material can be used to increase
Add one of specific surface area, electro-chemical activity, capacitance characteristic and conductive capability of the electrode or a variety of.
Other side according to the invention provides 3D body micro-silicon capacitor made from production method described in one kind
Device.
Other side according to the invention provides the application of 3D body micro-silicon capacitor described in one kind, is used for energy
Amount storage and power supply, acceleration sensing, vibrating sensing, impact sensing or filter.
In general, through the invention it is contemplated above technical scheme is compared with the prior art, can obtain down and show
Beneficial effect:
(1) production method of a kind of 3D body micro-silicon capacitor proposed by the present invention, it is deep by being carried out to silicon-based substrate
Erosion obtains the electrode structure with certain longitudinal space, and compared to plane electrode, the longitudinal direction of electrode is highly extended and benefit
With electrode specific surface area increases；Structure introduce active material after, compared with plane electrode, available electrode specific surface area from
Two-dimensional extended surface to three-dimensional surface and side wall, the utilization of side wall longitudinal space makes it to load more active materials, from
And further promote specific energy density；And the physicochemical properties of silicon substrate structure are stablized, and have amount of activated material and introduce when institute
The properties such as the high temperature resistant that needs, corrosion-resistant.
(2) silicon wafer can be patterned production by semiconductor technology by MEMS technology, being capable of definer according to demand
Part geometric dimension, the 3D body silicon electrode being miniaturized, compared to other structures, electrode structure has flexible adjustable row, electricity
Pole thickness has washability because of silicon wafer thickness；With the diminution of comb teeth width and gap, the transmission Lu Jingke of electrolyte ion into
One step shortens, so that limiting the resistance of ion transmission reduces, and in same accounting area, reduces comb teeth width, can significantly increase
Electrode specific surface area, the two can realize the regulation to specific capacitance and specific power density jointly.3D silicon substrate structure coats carbon-based conductive
The introducing of layer method overcomes problem of the silicon as 3D electrode substrate poorly conductive, and introducing after being suitable for has high capacity close
The active material of degree further promotes capacitor chemical property；
(3) mature packaging technology can be used in prepared silica-based condenser device chip, protects structure, it is ensured that its
Steady operation and long-term reliability, and the microstructure can integrate directly on substrate, (comprising a variety of) realizes electrical connection,
With good integration, target parameter, meets different chips required for capable of more being obtained by its series and parallel structure
Energy supply demand makes the invention with more universality and wide application value.
Detailed description of the invention
Fig. 1 is the present invention with three kinds of different modes encapsulation and integrated MEMS-3D body micro-silicon capacitor top view.
Fig. 2 is the top view and stereoscopic schematic diagram for the silicon comb electrodes that deep etching obtains.
Fig. 3 is in the surface of silicon comb electrodes and the top view and diagrammatic cross-section of sidewall growth silicon substrate conductive layer.
Fig. 4 is to coat the top view of active material on the 3D carbon silicon combination electrode surface that grown silicon substrate conductive layer and side wall
And sectional view.
Fig. 5 is encapsulation and integrated embodiment one: above-mentioned electrode is passed through sticky glue for comb teeth lower surface and insulation base
The fixed top view of seat.
Fig. 6 is the encapsulation of embodiment one and integrates: the top view after electrode surface is coated electrolyte.
Fig. 7 be embodiment one encapsulation with it is integrated: after the capacitor made is bonded fixation with substrate, using routing
Electrode and substrate are realized the top view after electrical connection by aluminum steel by technology.
Fig. 8 is encapsulation and another routing mode in integrated embodiment one: in the exposed silicon in electrode framework one end
Surface deposits conduction Pad point, and using routing technology, the top view after being electrically connected will be realized on electrode and substrate by gold thread.
Fig. 9 is the encapsulation of embodiment two and integrates: having grown active material, has deposited in the lower surface at electrode framework both ends
The alloy-layer of encapsulation, the encapsulation alloy of deposit patterned on insulating base, wherein left figure is lower surface after overturning electrode
Top view, right figure is the top view on insulating base after depositing encapsulation alloy.
The encapsulation of Figure 10 embodiment two and integrated: by the electrode lower surface of the complete encapsulation alloy of above-mentioned deposition and insulating base
Alignment, using thermocompression bonding, makes the two realize the top view after being electrically connected and fixing under the action of solder.
Figure 11 is the encapsulation of embodiment two and integrates: the top view after electrode surface is coated electrolyte.
Figure 12 be embodiment two encapsulation with it is integrated: after the capacitor made is bonded fixation with substrate, using beating
Encapsulation alloy and substrate exposed on insulating base are realized the top view after electrical connection by gold thread by line technology.
In all the appended drawings, identical appended drawing reference is used to denote the same element or structure, in which:
101- silicon comb electrodes；102- carbon-based conductive layer；103- active material；201- insulating base,；202- electrolyte；
203- encapsulates alloy；204- substrate, 205- conduction Pad point, 206a- aluminum steel；206b- gold thread.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.As long as in addition, technical characteristic involved in the various embodiments of the present invention described below
Not constituting a conflict with each other can be combined with each other.
A kind of production method of 3D body micro-silicon capacitor provided by the invention, includes the following steps:
(1) array pattern is made by photoetching process on silicon-based substrate surface, is performed etching according to the array pattern, etched
Substrate is penetrated, the 3D body silicon electrode of hollow out is obtained.
(2) to step (1) obtain 3D body silicon electrode carry out hydrophilic treated so that the electrode surface all have it is hydrophilic
Property, obtain that there is hydrophilic 3D body silicon electrode；
(3) frame part in the 3D body silicon electrode obtained to step (2) for electrical connection carries out exposure mask, to unmasked
Partial surface carries out the cladding of carbon-based conductive layer, the 3D carbon silicon combination electrode for being coated with carbon-based conductive layer is obtained, such as Fig. 3 institute
Show.
(4) active material is coated to the 3D carbon silicon combination electrode surface for being coated with carbon-based conductive layer described in step (3), obtained
It is coated with the 3D carbon silicon combination electrode of active material, as shown in Figure 4.
(5) exposure mask of the removal frame part for electrical connection, which is packaged and is integrated, obtain institute
3D body micro-silicon capacitor is stated, as shown in Figure 1.
Wherein the electrode surface had both included the horizontal surface of electrode structure, also included by etching obtained vertical table
Face.Vertical surface, that is, side, is also expressed as side wall in the present invention, and horizontal surface and vertical surface (i.e. side or side wall) are common
Constitute the electrode.
The 3D body micro-silicon capacitor based on MEMS technology in the present invention is using semiconductor micro-nano processing technology production electricity
Container.3D body silicon comb electrodes are obtained by photoetching process deep etching first, then to the surface of comb teeth and side wall successively carbon coated
The active material of material and nanostructure finally applies electrolyte, encapsulates and powers with objective chip integration realization.
In some embodiments, 3D body silicon electrode structure of the present invention is the comb teeth-shaped of hollow out.
Substrate etching is penetrated by deep etching in 3D body micro-silicon capacitor provided by the invention, obtains having certain vertical
To the comb electrodes structure of depth.It can be wide according to practical application request selection silicon-based substrate thickness, and the comb teeth that etching obtains
Degree and comb teeth gap.
In some embodiments, the 3D body silicon electrode is 3D body silicon comb-like electrode, and comb teeth width is 10 microns or more,
The distance between comb teeth and comb teeth are 10 microns or more, and the thickness of monolithic silicon substrate is generally 100-1000 microns.
Etching can be wet etching or dry etching.
In some embodiments, the 3D body silicon electrode of the hollow out that step (1) obtains as shown in Fig. 2, its first to silicon-based substrate into
The pretreatments such as row cleaning, carry out photoetching process to substrate face first, make array pattern, obtain 3D body silicon comb by deep etching
Tooth electrode structure 101.
In some embodiments, step (2) carries out the electrode by plasma oxygen cleaning technique or using Pirahan
Hydrophilic treated.
Step (3) the of the present invention exposure mask, for conventional mask process mode, such as can by adhesive tape or silicone grease etc. into
Row covering or package etc..
Step (3) the carbon-based conductive layer of the present invention includes but is not limited to amorphous carbon, graphite, carbon nanotube or graphite
Alkene.
In some embodiments, step (3) carries out the cladding of carbon-based conductive layer by the following method: by carbon group compound forerunner
Body is dissolved in volatile solvent, obtains precursor solution；The 3D body silicon electrode is passed through into water in the precursor solution
Thermal method coats carbon-based conductive layer in the electrode surface.
In other embodiments, step (3) carries out the cladding of carbon-based conductive layer by the following method: before carbon group compound
It drives body to be dissolved in volatile solvent, obtains precursor solution；In the precursor solution uniformly by the 3D body silicon electrode
It is taken out after infiltration, forms the presoma in the electrode surface reduction decomposition by chemical vapour deposition technique after flash baking
Carbon-based conductive layer.The volatile solvent is water, acetone or isopropanol etc..
In some embodiments, the carbon group compound presoma is hydrocarbon.Those skilled in the art it will be clearly understood that
The hydrocarbon that arbitrarily the carbon-based conductive layer can be coated in the electrode surface by hydro-thermal method is all applicable.The present invention
The hydrocarbon includes but is not limited to glucide, photoresist etc., and wherein glucide includes glucose, sucrose, fruit
Sugar etc..
It was found that, using hydrocarbon as carbon group compound presoma when, due to its dissolution after formed before
Driving liquid solution may have certain viscosity, when the distance between the comb teeth width of comb electrodes and comb teeth are smaller, meeting
So that deforming or bonding between comb teeth, cause final capacitor that short circuit occurs；In this case, adjustable comb teeth width
Or comb teeth spacing or volatile solvent can use acetone or isopropanol, faster due to its evaporation rate, can be avoided comb teeth electricity
Pole structure deforms or comb teeth bonding.
In some embodiments, the carbon-based conductive layer is carbon nanotube or graphene nano structure, and step (3) is by such as
Lower method carries out the cladding of carbon-based conductive layer:
The common methods that (3-1) is deposited by material for example electron beam evaporation deposition, magnetron sputtering plating, thermal evaporation plated film,
Chemical vapor deposition, atomic layer deposition, sol-gal process, hydro-thermal method or galvanoplastic the 3D body silicon electrode upper and lower surface and
Side successively coats buffer layer and Catalytic Layer；The buffer layer is SiO2、Al、TiN、Al2O3Or zeolite etc.；The Catalytic Layer is
Ni、Ti、Fe、Fe2O3, Co, Cu, Mo, Pd, Au or Ag etc.；
(3-2) uses PECVD or CVD, in the electrode surface enveloped carbon nanometer tube for successively coating buffer layer and Catalytic Layer or
The carbon-based conductive layer of graphene nano structure；
Wherein, the buffer layer avoids the Catalytic Layer from being diffused into substrate for completely cutting off Catalytic Layer and electrode substrate；Institute
Catalytic Layer is stated for catalyzing carbon nanotube or graphene growth.
In some embodiment, the frame part for being used to be electrically connected is masked, is covered or is wrapped up by adhesive tape,
Surface to comb electrodes and side wall coat carbon-based conductive layer 102, carbon-based conductive layer include but is not limited to amorphous carbon, graphite,
Carbon nanotube or graphene, as shown in Figure 3.
In some embodiments, step (4) coats active material to the surface of carbon silicon combination electrode specifically:
(4-1) carries out hydrophilic treated to the 3D carbon silicon combination electrode for being coated with carbon-based conductive layer described in step (3), specifically
Are as follows: the electrode is subjected to hydrophilic treated by plasma oxygen cleaning technique or using Pirahan；Using low in some embodiments
Plasma oxygen cleaning technique under power.
(4-2) is by the electrode after hydrophilic treated using hydro-thermal method or galvanoplastic in the electrode surface growth activity material.
In some embodiments, the active material is made of homogenous material or composite material.Not according to nano material type
Together, the active material can be used to increase specific surface area, electro-chemical activity, capacitance characteristic, conductive capability of structure etc..It is described to receive
Rice material includes but is not limited to nano wire/stick of zinc oxide, manganese oxide, vanadium oxide, tungsten oxide, titanium oxide, titanium nitride, titanium carbide
Deng one of or it is a variety of.
In some embodiments, surface and side wall to the comb electrodes for having coated carbon-based conductive layer carry out active material 103
Cladding, which by plasma oxygen cleaning technique under low-power or uses Pirahan firstly the need of to comb structure
Hydrophilic treated is carried out, the frame part for being used to be electrically connected is masked, in the precursor solution of growth activity material, is adopted
With hydro-thermal method or galvanoplastic, the growth activity material on comb teeth, as shown in Figure 4.
Step (5) carries out hydrophilic treated, the exposure mask of the removal frame part for electrical connection, In to comb part
After the electrode surface coated electrolyte, which is packaged and is integrated, obtains the 3D body micro-silicon capacitor.It can also
First coated electrolyte, then remove the exposure mask of frame part.
The present invention prepares its encapsulation of 3D body micro-silicon capacitor and encapsulation and the integration mode of chip can be used in integrated approach.
In some embodiments, the electrode is packaged and is integrated by step (5), is included the following steps:
(5-1) is bonded in the lower surface spot printing viscosity glue 207 of the frame part of the electrode structure with insulating base 201,
The heating cure at 100 DEG C -200 DEG C realizes that electrode is fixed, as shown in Figure 5.Insulating base can be glass or polymeric material
Material.
(5-2) does positive and negative electrode separation using laserscribing, as shown in Figure 6.
(5-3) carries out hydrophilic treated to comb part again, applies gelated electrolyte 202 on its surface, as shown in Figure 6；One
In a little embodiments, when comb teeth gap is smaller, such as to make electrolyte well into comb teeth gap, which can be placed on very
In the air；
(5-4) coating finishes, and puts it into baking oven, and it is gentle to remove moisture extra in electrolyte at a proper temperature
Bubble.
(5-5) posts and fixes above structure and substrate 204, by routing technology, realizes 3D body using aluminum steel 206a
Silicon capacitor and the electrical connection of substrate between the two, this method are the first encapsulation scheme, as shown in Figure 7；
Or be masked insulating base and comb part, conduction Pad point is deposited at the both ends of silicon substrate frame upper surface
205, by routing technology, capacitor and the electrical connection of substrate between the two, this method second are realized using gold thread 206b
Kind encapsulation scheme, as shown in Figure 8.
(5-6) finally, covering insulation upper cover, fixed cover is simultaneously sealed gap, avoids capacitor by external environment
Interference avoids electrolyte rotten.
Several above-mentioned capacitors are stacked and are fixed by (5-7), by routing technology, realize it is between capacitor and
Connection.
In other embodiments, the electrode is packaged and is integrated by step (5), is included the following steps:
(5-1) is masked the comb part of the electrode, in the both ends depositing encapsulation alloy 203 of frame lower surface,
Patterned encapsulation alloy 203 corresponding with the both ends of frame lower surface is deposited on insulating base 201, as shown in figure 9, two
Person is directed at fitting, realizes electrical connection by thermocompression bonding under the action of solder.
(5-2) does positive and negative electrode separation using laserscribing, as shown in Figure 10.
(5-3) removes the mask material of comb part, carries out hydrophilic treated again to comb part, applies on its surface gluey
Electrolyte 202 when comb teeth gap is smaller, will such as make electrolyte well into comb teeth gap as shown in figure 11, can be by the knot
Structure is placed in a vacuum.
(5-4) coating finishes, and puts it into baking oven, and it is gentle to remove moisture extra in electrolyte at a proper temperature
Bubble.
(5-5) posts and fixes above structure and substrate 204, by routing technology, realizes electrode, insulation using gold thread
Electrical connection between pedestal and substrate three, as shown in figure 12.
(5-6) finally, covering insulation upper cover, fixed cover is simultaneously sealed gap, avoids capacitor by external environment
Interference avoids electrolyte rotten.
Several above-mentioned capacitors are stacked and are fixed by (5-7), by routing technology, realize it is between capacitor and
Connection.
Above-mentioned all steps can finely tune preparation sequence and structure design according to the actual situation.
A kind of production method of 3D body micro-silicon capacitor based on MEMS technology provided by the invention, the program are mainly adopted
With semiconductor micro-nano processing technology, required electrode structure is obtained by carrying out deep etching to silicon wafer, as substrate, at this
Substrate surface and side wall introduce carbon-based conductive material, are uniformly coated to it, reduce silicon substrate structure resistance, then on surface and side
Wall coats active material, and capacitor is made to have excellent chemical property, finally, applying electrolyte to capacitor, realizes encapsulation,
It is integrated with device to be powered.Prepared by the present invention and the 3D body silicon micro capacitor device encapsulated can be used for energy stores and supply
Electricity, acceleration sensing, vibration or impact sensing, filter etc..
As it will be easily appreciated by one skilled in the art that the foregoing is merely illustrative of the preferred embodiments of the present invention, not to
The limitation present invention, any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should all include
Within protection scope of the present invention.
Claims (9)
1. a kind of production method of 3D body micro-silicon capacitor, which comprises the steps of:
(1) array pattern is made by photoetching process on silicon-based substrate surface, is performed etching, is etched through according to the array pattern
Substrate obtains the 3D body silicon electrode of hollow out；
(2) hydrophilic treated is carried out to the 3D body silicon electrode that step (1) obtains, so that the electrode surface has hydrophily, obtained
With hydrophilic 3D body silicon electrode；
(3) frame part in the 3D body silicon electrode obtained to step (2) for electrical connection carries out exposure mask, to unmasked part
Electrode surface carry out carbon-based conductive layer cladding, obtain the 3D carbon silicon combination electrode for being coated with carbon-based conductive layer；
(4) electrode surface of the 3D carbon silicon combination electrode for being coated with carbon-based conductive layer obtained in step (3) coats active material,
Obtain the 3D carbon silicon combination electrode for being coated with active material；
(5) exposure mask of the removal frame part for electrical connection, which is packaged and is integrated,
Obtain the 3D body micro-silicon capacitor；
Wherein the electrode surface had both included the horizontal surface of the electrode structure, also included by etching obtained vertical surface.
2. production method as described in claim 1, which is characterized in that the 3D body silicon electrode structure is comb teeth-shaped.
3. production method as described in claim 1, which is characterized in that step (3) carries out carbon-based conductive layer by the following method
Cladding:
Carbon group compound presoma is dissolved in volatile solvent by (3-1), obtains precursor solution；
The 3D body silicon electrode is placed in the precursor solution by (3-2), by hydro-thermal method in the electrode surface carbon coated
Base conductive layer；The carbon group compound presoma is hydrocarbon.
4. production method as described in claim 1, which is characterized in that step (3) carries out carbon-based conductive layer by the following method
Cladding:
Carbon group compound presoma is dissolved in volatile solvent by (3-1), obtains precursor solution；
The 3D body silicon electrode is placed in the precursor solution by (3-2), is taken out after infiltration, is passed through chemical vapor deposition after drying
Area method makes the presoma form carbon-based conductive layer in the electrode surface reduction decomposition, and the presoma is hydrocarbon.
5. production method as described in claim 1, which is characterized in that the carbon-based conductive layer is that carbon nanotube or graphene are received
Rice structure, step (3) carry out the cladding of carbon-based conductive layer by the following method:
(3-1) by electron beam evaporation deposition, magnetron sputtering plating, thermal evaporation plated film, chemical vapor deposition, atomic layer deposition,
Sol-gal process, hydro-thermal method or galvanoplastic successively coat buffer layer and Catalytic Layer in the electrode surface；
(3-2) using plasma enhances chemical vapor deposition or chemical vapor deposition, is successively coating buffer layer and catalysis
The electrode surface deposition of carbon nanotubes or the carbon-based conductive layer of graphene nano structure of layer；
Wherein, the buffer layer avoids the Catalytic Layer from penetrating into substrate for completely cutting off Catalytic Layer and electrode substrate；The catalysis
Layer is used for catalyzing carbon nanotube or graphene growth.
6. production method as described in claim 1, which is characterized in that step (4) is specific to electrode surface cladding active material
Are as follows:
(4-1) carries out hydrophilic treated to step (3) the 3D carbon silicon combination electrode, specifically: by the electrode plasma oxygen
Cleaning technique carries out surface hydrophilic processing using Pirahan；
(4-2) is to the electrode surface growth activity material after the hydrophilic treated.
7. production method as described in claim 1, which is characterized in that the active material is single nano material or compound receives
Rice material, the active material can be used to increase specific surface area, electro-chemical activity, capacitance characteristic and the conductive capability of the electrode
One of or it is a variety of.
8. 3D body micro-silicon capacitor made from production method as described in any one of claim 1 to 7.
9. the application of 3D body micro-silicon capacitor as claimed in claim 8, which is characterized in that be used for energy stores and power,
Acceleration sensing, vibrating sensing, impact sensing or filter.
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