CN110421479A - A kind of electronic device semiconductor wafer polishing equipment - Google Patents
A kind of electronic device semiconductor wafer polishing equipment Download PDFInfo
- Publication number
- CN110421479A CN110421479A CN201910658872.XA CN201910658872A CN110421479A CN 110421479 A CN110421479 A CN 110421479A CN 201910658872 A CN201910658872 A CN 201910658872A CN 110421479 A CN110421479 A CN 110421479A
- Authority
- CN
- China
- Prior art keywords
- polishing
- layer
- semiconductor wafer
- electronic device
- composite layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 112
- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- 239000002131 composite material Substances 0.000 claims abstract description 39
- 239000002002 slurry Substances 0.000 claims abstract description 19
- 238000001816 cooling Methods 0.000 claims abstract description 8
- 235000012431 wafers Nutrition 0.000 claims description 44
- 230000003028 elevating effect Effects 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 5
- 229910001329 Terfenol-D Inorganic materials 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 239000004952 Polyamide Substances 0.000 claims description 3
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000009434 installation Methods 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 3
- 229920002647 polyamide Polymers 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 9
- 230000002411 adverse Effects 0.000 abstract description 5
- BVPWJMCABCPUQY-UHFFFAOYSA-N 4-amino-5-chloro-2-methoxy-N-[1-(phenylmethyl)-4-piperidinyl]benzamide Chemical compound COC1=CC(N)=C(Cl)C=C1C(=O)NC1CCN(CC=2C=CC=CC=2)CC1 BVPWJMCABCPUQY-UHFFFAOYSA-N 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 5
- 244000309464 bull Species 0.000 description 4
- 239000000463 material Substances 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 210000004080 milk Anatomy 0.000 description 1
- 235000013336 milk Nutrition 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
- B24B55/02—Equipment for cooling the grinding surfaces, e.g. devices for feeding coolant
Abstract
The invention discloses a kind of electronic device semiconductor wafer polishing equipment, it is related to processing technology of semiconductor wafer field, the present invention passes through setting magnetostriction composite layer, and magnetostriction composite layer is arranged between elastic layer and the polishing layer or in polishing layer, it is controlled using dilatation of the Electromagnetic Control mechanism to the magnetostriction composite layer, in this way, it can effectively realize and the grinding efficiency and precision of polishing pad are controlled, and the deformation of magnetostriction composite layer is enabled to become larger with the increasing for relative rotation speed between the polishing pad and chip, the logical slurry ability in slurry hole is improved by the deformation of magnetostriction composite layer, it improves the cooling effect to polishing pad and takes away the ability of removal polishing clast, guarantee wafer polishing quality, and when revolving speed reduction, this deformation can be reduced, so that polishing efficiency is higher, Hole is smaller, improves the smoothness of wafer surface, reduces the excessive adverse effect generated to polishing chip of hole.
Description
Technical field
The present invention relates to processing technology of semiconductor wafer field, specifically a kind of electronic device is set with semiconductor wafer polishing
It is standby.
Background technique
For the polishing of chip, presently the most popular polishing mode is using chemical mechanical grinding, chemical machinery
Polishing (CMP) is a kind of combination chemical force and mechanical force to allow the polishing method of smooth surface.It is using with grinding and corruption
The chemical grinding slurry of erosion effect, and used together with grinding pad, chemically mechanical polishing can effectively remove the material on wafer,
And it is easy to make the random fluctuation of wafer to become flat stable, and then the surface quality of wafer is made to reach higher grade.
Currently, when being polished to chip, since revolving speed is higher between polishing pad and chip, between frictional heat generation compared with
More, this just needs grinding milk to can be good at radiating, and can carry away the clast fallen in process of lapping, and
Guarantee polishing pad within the specified temperature range, in this regard, current polishing pad generally requires is arranged cavity or thin inside it
The fluid ability of slurries is improved to be filled in slurries inside it always during the polishing process in hole.
But, it is contemplated that the excessive of the polishing efficiency and precision of chip, this cavity or pore too small can generate
Adverse effect, moreover, polishing different phase, revolving speed is different, actually the size requirements to polishing pad internal cavity or pore
Difference, still, these current equipment do not consider this problem, cause the different polishing stages, the efficiency or essence of polishing
Degree is affected.
Therefore, the present invention provides a kind of electronic device semiconductor wafer polishing equipment, to solve above-mentioned background technique
The problem of middle proposition.
Summary of the invention
The purpose of the present invention is to provide a kind of electronic device semiconductor wafer polishing equipment, to solve above-mentioned background skill
The problem of being proposed in art.
To achieve the above object, the invention provides the following technical scheme:
A kind of electronic device semiconductor wafer polishing equipment, including workbench, elevating control seat, driving mechanism, chip
Fixed mechanism and polishing pad, wherein be provided in the workbench and driving rotation is carried out to chip and chip is fixed
Chip fixed mechanism, also installation settings has the elevating control seat on the workbench, supports setting on the elevating control seat
There is the driving mechanism, the end of the driving mechanism is connected with the polishing pad；The polishing pad includes from top to bottom successively
Supporting layer, elastic layer and the polishing layer of connection, multiple slurry holes entered for slurry are provided on the polishing layer, and feature exists
In, further include magnetostriction composite layer, the magnetostriction composite layer be arranged between the elastic layer and the polishing layer or
In person's polishing layer；
It further include Electromagnetic Control mechanism, the Electromagnetic Control mechanism carries out the dilatation of the magnetostriction composite layer
Control.
Further, preferably, Electromagnetic Control mechanism structure be set as so that the magnetostriction composite layer deformation with
Increasing for relative rotation speed between the polishing pad and the chip and become larger.
Further, preferably, the surrounding on the workbench positioned at the chip fixed mechanism is additionally provided with electromagnetic screen
Cover mounting groove is covered, the electro-magnetic shielding cover, which removably fastens, to be mounted in the electro-magnetic shielding cover mounting groove.
Further, preferably, the magnetostriction composite layer includes the circular ring shape flake structure of multiple concentric arrangements,
And the circular ring shape flake structure is bonded and fixed between the elastic layer and the polishing layer.
Further, preferably, the magnetostriction composite layer is disk-shaped wafers structure, the polishing layer includes multilayer
The polishing layer unit being bonded together is laminated, and bonding is provided with the disk-shaped wafers between two adjacent polishing layer units
Structure, and the slurry hole penetrates through entire polishing layer and disk-shaped wafers structure.
Further, preferably, the thickness of the circular ring shape flake structure, disk-shaped wafers structure is greater than 0.1mm and small
In 1.5mm.
Further, preferably, the magnetostriction composite layer using Terfenol-D particle, epoxy resin, polyamide,
Graphite is mixed with.
Further, preferably, the driving mechanism includes attachment base, motor, main shaft and pressure control mechanism, wherein
Attachment base is fixedly installed at the top of the elevating control seat, one end of the attachment base is fixedly installed motor, the motor
Output end connect with the spindle drive, the main shaft is vertical and is spindle rotationally arranged in the other end of the attachment base, institute
The bottom for stating main shaft is connect using the pressure control mechanism with the Hollow Shaft Transmission, the bottom fixed setting of the hollow shaft
There is the fixed disk that polishing pad is fixed.
Further, preferably, the pressure control mechanism includes elastic buffer seat and spring, wherein the elasticity is slow
The both ends of red seat are connected between main shaft and hollow shaft, and the spring is in vertical setting in the elastic buffer seat
Cavity in, the Electromagnetic Control mechanism includes electromagnetic generator and control line, and the electromagnetic generator is located at the hollow shaft
It is interior.
Further, preferably, the chip fixed mechanism includes base body, the upper surface of the base body is arranged
There is cover board, and be provided with matching seat between base body and cover board, the base body is internally provided with heating sheet, the lid
Cooling piece is provided on the outside of plate, the surface of the matching seat offers through-hole, and the surface of the cover board is provided with cushion.
Compared with prior art, the beneficial effects of the present invention are:
The present invention is arranged by setting magnetostriction composite layer, and by magnetostriction composite layer in elastic layer and the polishing
Between layer or in polishing layer, controlled using dilatation of the Electromagnetic Control mechanism to the magnetostriction composite layer, this
Sample can be realized effectively and be controlled the grinding efficiency and precision of polishing pad, and enable to magnetostriction composite layer
Deformation become larger with the increasing for relative rotation speed between the polishing pad and chip, by the deformation of magnetostriction composite layer come
The logical slurry ability in slurry hole is improved, the cooling effect to polishing pad is improved and takes away the ability of removal polishing clast, guarantees chip
Quality of finish, and when revolving speed reduction, this deformation can be reduced, so that polishing efficiency is higher, hole is smaller, improves wafer surface
Smoothness, reduce hole it is excessive to polishing chip generate adverse effect.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of electronic device semiconductor wafer polishing equipment；
Fig. 2 is structural schematic diagram internal in a kind of electronic device semiconductor wafer polishing equipment；
Fig. 3 is a kind of structural schematic diagram of protective device in electronic device semiconductor wafer polishing equipment；
Fig. 4 is a kind of electronic device structural schematic diagram that device is fixed in semiconductor wafer polishing equipment.
Fig. 5 is a kind of one structural schematic diagram of embodiment of the polishing pad of electronic device semiconductor wafer polishing equipment；
Fig. 6 is a kind of two structural schematic diagram of embodiment of the polishing pad of electronic device semiconductor wafer polishing equipment；
Fig. 7 is a kind of three structural schematic diagram of embodiment of the polishing pad of electronic device semiconductor wafer polishing equipment.
Specific embodiment
Please refer to Fig. 1~7, in the embodiment of the present invention, a kind of electronic device semiconductor wafer polishing equipment, including work
Platform 4, elevating control seat 3, driving mechanism, chip fixed mechanism 5 and polishing pad 6, wherein be provided in the workbench to chip
The chip fixed mechanism 5 for driving rotation and chip being fixed is carried out, also installation settings has the lifting on the workbench
Seat 3 is controlled, support is provided with the driving mechanism on the elevating control seat 3, and the end of the driving mechanism is connected with described
Polishing pad 6；The polishing pad 6 includes sequentially connected supporting layer 61, elastic layer 62 and polishing layer 64 from top to bottom, the polishing
Multiple slurry holes 65 entered for slurry are provided on layer, which is characterized in that further include magnetostriction composite layer, the mangneto is stretched
Contracting composite layer is arranged between the elastic layer and the polishing layer or in polishing layer；The invention also includes electromagnetic controllers
Structure, the Electromagnetic Control mechanism control the dilatation of the magnetostriction composite layer.
Wherein, Electromagnetic Control mechanism structure is set as so that the deformation of the magnetostriction composite layer is with the polishing pad
Increasing for relative rotation speed between the chip and become larger.
In addition, being located at the chip on the workbench to reduce the adverse effect of outer bound pair magnetostriction composite layer
The surrounding of fixed mechanism 5 is additionally provided with electro-magnetic shielding cover mounting groove 7, the electro-magnetic shielding cover removably fasten be mounted on it is described
In electro-magnetic shielding cover mounting groove 7.
As the embodiment of the present invention one, such as Fig. 5, the magnetostriction composite layer includes the annulus of multiple concentric arrangements
Shape flake structure 63, and the circular ring shape flake structure is bonded and fixed between the elastic layer and the polishing layer.
As the embodiment of the present invention two, such as Fig. 6, the magnetostriction composite layer is disk-shaped wafers structure 66, described
Polishing layer 64 includes the polishing layer unit that two-layer laminate is bonded together, and setting is bonded between two adjacent polishing layer units
There is the disk-shaped wafers structure 66, and the slurry hole 65 penetrates through entire polishing layer and disk-shaped wafers structure 66.
As the embodiment of the present invention three, such as Fig. 7, the magnetostriction composite layer is disk-shaped wafers structure 66, described
Polishing layer 64 includes the polishing layer unit that trilaminate stack is bonded together, and setting is bonded between two adjacent polishing layer units
There is the disk-shaped wafers structure 66, and the slurry hole 65 penetrates through entire polishing layer and disk-shaped wafers structure 66.
Wherein, the circular ring shape flake structure 63, disk-shaped wafers structure 66 thickness be greater than 0.1mm and be less than 1.5mm.
In the present invention, the magnetostriction composite layer uses Terfenol-D particle, epoxy resin, polyamide, graphite
It is mixed with.When applying a magnetic field, deformation occurs for induced by magnetic field magnetostriction composite material, moreover, the mangneto with system is stretched
Compression material is compared, and the magnetostrictive strain of Terfenol-D is bigger, and reaction is faster.
Such as Fig. 1, the driving mechanism includes attachment base 10, motor 2, main shaft 9 and pressure control mechanism, wherein the liter
The top of drop control seat 3 is fixedly installed attachment base 10, and one end of the attachment base is fixedly installed motor 2, the motor 2
Output end is connect with the spindle drive, and the main shaft is vertical and is spindle rotationally arranged in the other end of the attachment base, described
The bottom of main shaft 9 is sequentially connected using the pressure control mechanism and the hollow shaft 82, and the bottom fixation of the hollow shaft is set
It is equipped with the fixed disk 60 that polishing pad is fixed.
The pressure control mechanism includes elastic buffer seat 83 and spring 81, wherein the both ends of the elastic buffer seat 83
It is connected between main shaft and hollow shaft, and the spring is in the vertical cavity being arranged in the elastic buffer seat,
The Electromagnetic Control mechanism includes electromagnetic generator 15 and control line 14, and the electromagnetic generator 15 is located in the hollow shaft.
The chip fixed mechanism 5 includes base body 53, and the upper surface of the base body 53 is provided with cover board 51, and
It is provided with matching seat 56 between base body 53 and cover board 51, the base body 53 is internally provided with heating sheet 54, described
The outside of cover board 51 is provided with cooling piece 52, and the surface of the matching seat 56 offers through-hole 55, and the surface of the cover board 51 is set
It is equipped with cushion.
In addition, the front side surface of the attachment base 10 is provided with control panel 1, and the inside of attachment base 10 in the present invention
The upper end of motor 2 is provided with bull stick A11, the upper end for being internally located at fixed link 9 of the attachment base 10 is provided with bull stick
B13, and attachment base 10 is internally provided with the belt 12 connecting with bull stick A11, bull stick B13.The cooling piece 52 is a kind of amber
That note cooling piece, the surface of the cover board 51 is provided with cushion.
The present invention is arranged by setting magnetostriction composite layer, and by magnetostriction composite layer in elastic layer and the polishing
Between layer or in polishing layer, controlled using dilatation of the Electromagnetic Control mechanism to the magnetostriction composite layer, this
Sample can be realized effectively and be controlled the grinding efficiency and precision of polishing pad, and enable to magnetostriction composite layer
Deformation become larger with the increasing for relative rotation speed between the polishing pad and chip, by the deformation of magnetostriction composite layer come
The logical slurry ability in slurry hole is improved, the cooling effect to polishing pad is improved and takes away the ability of removal polishing clast, guarantees chip
Quality of finish, and when revolving speed reduction, this deformation can be reduced, so that polishing efficiency is higher, hole is smaller, improves wafer surface
Smoothness, reduce hole it is excessive to polishing chip generate adverse effect.
It is above-described, it is merely preferred embodiments of the present invention, but protection scope of the present invention is not limited to
This, anyone skilled in the art in the technical scope disclosed by the present invention, according to the technique and scheme of the present invention
And its inventive concept is subject to equivalent substitution or change, should be covered by the protection scope of the present invention.
Claims (10)
1. a kind of electronic device semiconductor wafer polishing equipment, including workbench (4), elevating control seat (3), driving mechanism,
Chip fixed mechanism (5) and polishing pad (6), wherein be provided in the workbench and driving rotation carried out to chip and to chip
The chip fixed mechanism (5) being fixed, also installation settings has the elevating control seat (3), the lifting on the workbench
Support is provided with the driving mechanism in control seat (3), and the end of the driving mechanism is connected with the polishing pad (6)；It is described
Polishing pad (6) includes sequentially connected supporting layer (61), elastic layer (62) and polishing layer (64) from top to bottom, on the polishing layer
It is provided with multiple slurry holes (65) entered for slurry, which is characterized in that further include magnetostriction composite layer, the magnetostriction
Composite layer is arranged between the elastic layer and the polishing layer or in polishing layer；
It further include Electromagnetic Control mechanism, the dilatation of the magnetostriction composite layer is controlled in the Electromagnetic Control mechanism
System.
2. a kind of electronic device semiconductor wafer polishing equipment according to claim 1, which is characterized in that the electromagnetism
Control mechanism structure is set as so that the deformation of the magnetostriction composite layer is with opposite between the polishing pad and the chip
Increasing for revolving speed and become larger.
3. a kind of electronic device semiconductor wafer polishing equipment according to claim 1, which is characterized in that the work
Surrounding on platform positioned at the chip fixed mechanism (5) is additionally provided with electro-magnetic shielding cover mounting groove (7), and the electro-magnetic shielding cover can
The fastening of disassembly is mounted in the electro-magnetic shielding cover mounting groove (7).
4. a kind of electronic device semiconductor wafer polishing equipment according to claim 1, which is characterized in that the mangneto
Flexible composite layer includes the circular ring shape flake structure (63) of multiple concentric arrangements, and the circular ring shape flake structure is adhesively fixed
Between the elastic layer and the polishing layer.
5. a kind of electronic device semiconductor wafer polishing equipment according to claim 1, which is characterized in that the mangneto
Flexible composite layer is disk-shaped wafers structure (66), and the polishing layer (64) includes the multilayer laminated polishing layer list being bonded together
Member, and bonding is provided with the disk-shaped wafers structure (66), and the slurry hole (65) between two adjacent polishing layer units
Penetrate through entire polishing layer and disk-shaped wafers structure (66).
6. a kind of electronic device semiconductor wafer polishing equipment according to claim 4 or 5, which is characterized in that described
Circular ring shape flake structure (63), disk-shaped wafers structure (66) thickness be greater than 0.1mm and be less than 1.5mm.
7. a kind of electronic device semiconductor wafer polishing equipment, feature described in -6 any one exist according to claim 1
In the magnetostriction composite layer is mixed with using Terfenol-D particle, epoxy resin, polyamide, graphite.
8. a kind of electronic device semiconductor wafer polishing equipment according to claim 7, which is characterized in that the driving
Mechanism includes attachment base (10), motor (2), main shaft (9) and pressure control mechanism, wherein the top of the elevating control seat (3)
Be fixedly installed attachment base (10), one end of the attachment base is fixedly installed motor (2), the output end of the motor (2) with
The spindle drive connection, the main shaft is vertical and is spindle rotationally arranged in the other end of the attachment base, the main shaft (9)
Bottom is sequentially connected using the pressure control mechanism and the hollow shaft (82), and the bottom of the hollow shaft is fixedly installed pair
The fixed disk (60) that polishing pad is fixed.
9. a kind of electronic device semiconductor wafer polishing equipment according to claim 8, which is characterized in that the pressure
Control mechanism includes elastic buffer seat (83) and spring (81), wherein the both ends of the elastic buffer seat (83) are connected to
Between main shaft and hollow shaft, and the spring is in the electromagnetism control in the vertical cavity being arranged in the elastic buffer seat
Mechanism processed includes electromagnetic generator (15) and control line (14), and the electromagnetic generator (15) is located in the hollow shaft.
10. a kind of electronic device semiconductor wafer polishing equipment according to claim 9, which is characterized in that the crystalline substance
Piece fixed mechanism (5) includes base body (53), and the upper surface of the base body (53) is provided with cover board (51), and pedestal sheet
It being provided between body (53) and cover board (51) matching seat (56), the base body (53) is internally provided with heating sheet (54),
It is provided with cooling piece (52) on the outside of the cover board (51), the surface of the matching seat (56) offers through-hole (55), the lid
The surface of plate (51) is provided with cushion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910658872.XA CN110421479B (en) | 2019-07-19 | 2019-07-19 | Semiconductor wafer polishing equipment for electronic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910658872.XA CN110421479B (en) | 2019-07-19 | 2019-07-19 | Semiconductor wafer polishing equipment for electronic device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110421479A true CN110421479A (en) | 2019-11-08 |
| CN110421479B CN110421479B (en) | 2021-01-26 |
Family
ID=68411485
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910658872.XA Active CN110421479B (en) | 2019-07-19 | 2019-07-19 | Semiconductor wafer polishing equipment for electronic device |
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| Country | Link |
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| CN (1) | CN110421479B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050042875A1 (en) * | 1999-04-20 | 2005-02-24 | Custer Daniel G. | Carrier heads, planarizing machines and methods for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies |
| CN101048260A (en) * | 2004-10-06 | 2007-10-03 | 拉杰夫·巴贾 | Method and apparatus for improved chemical mechanical planarization |
| CN102046331A (en) * | 2008-05-30 | 2011-05-04 | Memc电子材料有限公司 | Semiconductor wafer polishing apparatus and method of polishing |
| CN102240966A (en) * | 2010-05-13 | 2011-11-16 | 旭硝子株式会社 | Grinding pad and grinding device using the grinding pad |
| CN202225064U (en) * | 2011-09-06 | 2012-05-23 | 黄煌南 | Ring-shaped processing face of polishing pad conditioner as well as manufacturing die structure of ring-shaped processing face |
| CN103100966A (en) * | 2011-11-11 | 2013-05-15 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical lapping device and system |
-
2019
- 2019-07-19 CN CN201910658872.XA patent/CN110421479B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050042875A1 (en) * | 1999-04-20 | 2005-02-24 | Custer Daniel G. | Carrier heads, planarizing machines and methods for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies |
| CN101048260A (en) * | 2004-10-06 | 2007-10-03 | 拉杰夫·巴贾 | Method and apparatus for improved chemical mechanical planarization |
| CN102046331A (en) * | 2008-05-30 | 2011-05-04 | Memc电子材料有限公司 | Semiconductor wafer polishing apparatus and method of polishing |
| CN102240966A (en) * | 2010-05-13 | 2011-11-16 | 旭硝子株式会社 | Grinding pad and grinding device using the grinding pad |
| CN202225064U (en) * | 2011-09-06 | 2012-05-23 | 黄煌南 | Ring-shaped processing face of polishing pad conditioner as well as manufacturing die structure of ring-shaped processing face |
| CN103100966A (en) * | 2011-11-11 | 2013-05-15 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical lapping device and system |
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| Publication number | Publication date |
|---|---|
| CN110421479B (en) | 2021-01-26 |
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