CN110419112A - Solar battery cell and solar cell module - Google Patents
Solar battery cell and solar cell module Download PDFInfo
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- CN110419112A CN110419112A CN201780087633.2A CN201780087633A CN110419112A CN 110419112 A CN110419112 A CN 110419112A CN 201780087633 A CN201780087633 A CN 201780087633A CN 110419112 A CN110419112 A CN 110419112A
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- back side
- solar battery
- battery cell
- light
- contact hole
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Abstract
Have: the silicon substrate of the first conduction type；Backside passivation film is formed in the back side opposed with light-receiving surface in silicon substrate；Multiple contact holes (7), penetrate through backside passivation film and from the surface of backside passivation film reach silicon substrate the back side surface layer；Multiple first rear electrodes (13b) are overleaf provided for connecting band-like joint line (20) along a first direction on passivating film along a first direction；And back side collecting electrodes (13a), by contact hole (7) silicon substrate and the first rear electrode (13b) connect.In solar battery cell (10), avoid that the adjacent region the first rear electrode (13b) is provided with contact hole (7) in a first direction.
Description
Technical field
The present invention relates to solar battery cell and solar cell modules.
Background technique
In the past, in solar cells, for the carrier recombination velocity on the surface for inhibiting the light receiving side in silicon substrate
Purpose, use the special film of referred to as passivating film.Passivating film has following function: utilizing the correlation of passivating film and silicon
Or dangling bonds are blocked using the processing before and after the film forming of passivating film, to directly reduce the interface of silicon substrate and passivating film
The complex centre at place.In addition, passivating film has following function: and contain fixed charge by making the interface of silicon substrate and passivating film
Interface is set to generate electric field barrier to inhibit recombination velocity by field-effect.
In recent years, as shown in Patent Document 1, it is known that by also in the back of the non-illuminated surface side as solar battery cell
Passivating film is arranged in face, and PERC (the Passivated Emitter and Rear for being intended to improve the characteristic of back side is arranged
Cell, passivation emitter and back side battery) construction, to seek further characteristic to improve.In the P for the silicon substrate for having used p-type
In type solar battery cell, backside passivation film uses aluminium oxide (Al2O3), in addition protect the epiphragma of backside passivation film using all
The film as silicon nitride film (SiN film) or silicon oxynitride film (SiON).
Existing technical literature
Patent document
Patent document 1: No. 5924945 bulletins of Japanese Patent Publication No.
Summary of the invention
However, as shown in above patent document 1, the case where passivating film also is set at the back side of solar battery cell
Under, the good passivation effect of the back side of silicon substrate, needs in passivating film providing holes and in the back of silicon substrate in order to obtain
Face is also provided with hole.
When constituting solar cell module, the electrode of adjacent solar battery cell is connect each other by connector by electricity
It closes.Here, when connector to be connected to the electrode of solar battery cell, residual heat caused by the heating managed as joint
Stress is applied to solar battery cell.Then, there are the following problems: residual thermal stress is applied to the back side for being set to silicon substrate
Hole part, cause to crack using the part in hole as starting point in the silicon substrate of solar battery cell, not only incur and making
The deterioration of fabrication yield when making solar cell module, also incur by when external force is applied to solar cell module too
The caused output decline of the intensity decline of positive energy battery module, to make the reliability decrease of solar cell module.
The present invention has been made in view of the above problems, it is intended that seeking the sun as caused by backside passivation film
The characteristic of energy battery unit improves, and obtains being able to suppress as to failure caused by solar battery cell jointing line
Generation solar battery cell.
In order to solve the above problems and reach purpose, solar battery cell of the invention has: the first conduction type
Silicon substrate；Backside passivation film is formed in the back side opposed with light-receiving surface in silicon substrate；Multiple contact holes penetrate through backside passivation film
And the surface layer at the back side of silicon substrate is reached from the surface of backside passivation film；Multiple first rear electrodes, overleaf edge on passivating film
First direction be arranged side by side, for connecting band-like joint line along a first direction；And back side collecting electrodes, it will contact
Silicon substrate and the connection of the first rear electrode in hole.Solar battery cell is avoided and the first rear electrode phase in a first direction
Adjacent region and be provided with contact hole.
Solar battery cell of the invention obtains following effect: seeking the solar battery as caused by backside passivation film
The characteristic of unit improves, and obtains being able to suppress the generation as to failure caused by solar battery cell jointing line
Solar battery cell.
Detailed description of the invention
Fig. 1 is the perspective view of the solar cell module of the embodiments of the present invention from light receiving side.
Fig. 2 is the exploded perspective view of the solar cell module of the embodiments of the present invention from light receiving side.
Fig. 3 is the main portion sectional view of the solar cell module of embodiments of the present invention.
Fig. 4 is the perspective view of the solar battery array of the embodiments of the present invention from back side.
Fig. 5 is the perspective view of the solar battery string of the embodiments of the present invention from light receiving side.
Fig. 6 is the perspective view of the solar battery string of the embodiments of the present invention from back side.
Fig. 7 is the top view of the solar battery cell of the embodiments of the present invention from light receiving side.
Fig. 8 is the solar battery cell of the embodiments of the present invention from the back side opposed with light receiving side
Top view.
Fig. 9 is the cross-sectional view for showing the structure of solar battery cell of embodiments of the present invention, is the IX- in Fig. 8
Main portion sectional view at IX line.
Figure 10 is the cross-sectional view for showing the structure of solar battery cell of embodiments of the present invention, is the X-X in Fig. 8
Main portion sectional view at line.
Figure 11 is the enlarged view of the main part at the back side of the solar battery cell of embodiments of the present invention.
Figure 12 is the flow chart for showing the sequence of the manufacturing method of solar battery cell of embodiments of the present invention.
Figure 13 is to show in the semiconductor substrate formed in embodiments of the present invention by the silicon for being doped with the p-type of boron
The existing concept map of damaging layer.
Figure 14 is to show to eliminate the damaging layer existing for the surface of semiconductor substrate in embodiments of the present invention
The concept map of state.
Figure 15 is to show to form the texture erosion of texture structure on the surface of semiconductor substrate in embodiments of the present invention
Carve the schematic sectional view of process.
Figure 16 is to show to form the impurity diffusion of p-type impurity diffusion layer in semiconductor substrate in embodiments of the present invention
The schematic sectional view of process.
Figure 17 is to show the signal of the planarization process of the back side of semiconductor substrate in embodiments of the present invention to cut open
View.
Figure 18 is to show to form backside passivation film and epiphragma at the back side of semiconductor substrate in embodiments of the present invention
Process schematic sectional view.
Figure 19 is to show to form the work of antireflection film in the light receiving side of semiconductor substrate in embodiments of the present invention
The schematic sectional view of sequence.
Figure 20 is to show the process for forming contact hole in the back side of semiconductor substrate in embodiments of the present invention
Schematic sectional view.
Figure 21 is the region for showing the formation contact hole in the back side of semiconductor substrate in embodiments of the present invention
Diagrammatic top view.
Figure 22 is to show the electrode that will be used to form light-receiving surface electrode and rear electrode in embodiments of the present invention
Material paste is printed in the schematic sectional view on the surface of semiconductor substrate and the process at the back side.
Figure 23 be show in embodiments of the present invention simultaneously fired electrodes material paste come formed light-receiving surface electrode with
And the schematic sectional view of the process of rear electrode.
Figure 24 is to show in embodiments of the present invention to electrically engage light-receiving surface electrode and rear electrode with joint line
Joint line bonding process schematic diagram.
Figure 25 is the perspective view for showing the solar battery string of embodiments of the present invention.
(description of symbols)
1,11: semiconductor substrate；1H, 5H, 6H, 7: contact hole；2: minute asperities；3:n type impurity diffusion layer；3a: phosphorus glass
Glass layer；4: antireflection film；5: backside passivation film；6: epiphragma；8: back surface field layer；10: solar battery cell；10A: solar energy
The light-receiving surface of battery unit；10B: the back side of solar battery cell；11A: the light-receiving surface of semiconductor substrate；11B: semiconductor-based
The back side of plate；12: light-receiving surface electrode；12B: light-receiving surface bus electrode；12G: light-receiving surface grid electrode；13: rear electrode；13a:
Back side collecting electrodes；13b: back side bonding electrodes；13s: one opposite side；14: joint line join domain；14a: first area；14b:
Second area；15: damaging layer；16a: back side bonding electrodes material paste；16b: back side collecting electrodes material paste；16c: light
Face electrode material slurry；20: joint line；25: horizontal joint line；26: out splice going splice line；31: light-receiving surface guard member；32: the back side is protected
Guard；33: light receiving side sealing element；34: back side side seal；40: frame；50: solar battery string；70: solar battery
Array；100: solar cell module；200: heating tool.
Specific embodiment
Hereinafter, detailed based on solar battery cell and solar cell module of the attached drawing to embodiments of the present invention
Ground is illustrated.In addition, the invention is not limited by the embodiment, appropriate change is able to carry out in range without departing from its main purpose
More.In addition, in drawings identified below, in order to make it easy to understand, there are the scale bar of each layer or each component from it is practical different
The case where, and similarly there is such case between each attached drawing.
Embodiment
Fig. 1 is the perspective view of the solar cell module 100 of the embodiments of the present invention from light receiving side.Fig. 2
For the exploded perspective view of the solar cell module 100 of the embodiments of the present invention from light receiving side.Fig. 3 is the present invention
Embodiment solar cell module 100 main portion sectional view.Solar cell module about present embodiment
100, as shown in Figure 1 to Figure 3, the light receiving side of solar battery array 70 is protected by light receiving side sealing element 33 and light-receiving surface
Part 31 covers, and the back side opposed with light-receiving surface in solar battery array 70 is by back side side seal 34 and back-protective
Part 32 covers, and the frame 40 being enhanced around outer peripheral edge portion surrounds.
Fig. 4 is the perspective view of the solar battery array 70 of the embodiments of the present invention from back side.Fig. 5 be from
The perspective view of the solar battery string 50 of the embodiments of the present invention of light receiving side observation.Fig. 6 is the sheet from back side
The perspective view of the solar battery string 50 of the embodiment of invention.Fig. 7 is the embodiments of the present invention from light receiving side
Solar battery cell 10 top view.Fig. 8 is the embodiment party of the invention from the back side opposed with light receiving side
The top view of the solar battery cell 10 of formula.In fig. 8, an example for the position of joint line 20 shown in dotted line engaged.
As shown in figure 4, multiple solar battery strings 50 by horizontal joint line 25 and out splice going splice line 26 by electrical resistance with
And mechanically engage in series or in parallelly, to constitute solar battery array 70.
In addition, as shown in Figures 3 to 6, the multiple solar battery cells 10 in quadrangle form being configured adjacently pass through
Joint line 20 is connected in series by electrical resistance and mechanically, to constitute solar battery string 50.As shown in Figures 3 to 6,
Multiple solar battery cells 10 are connected in series in X-direction in the figure as first direction by joint line 20.First direction
Link direction for the multiple solar battery cells 10 connected by joint line 20.
In order to improve the concentration ratio of light, the half of the first interarea as semiconductor substrate 11 of solar battery cell 10
The side light-receiving surface 11A of conductor substrate is formed with concaveconvex shape by texture etching, which is by formation p-type impurity
The semiconductor substrate 11 in quadrangle form that diffusion layer is constituted so as to form the p-type monocrystalline silicon substrate of pn-junction.Here, partly leading
The shape of structure base board 11 has square shape on the face direction of semiconductor substrate 11.P-type impurity diffusion layer, which is formed in, partly leads
The side light-receiving surface 11A of structure base board.Then, film forming has the silicon nitride as antireflection film on the light-receiving surface 11A of semiconductor substrate
Film.In addition, in the accompanying drawings, the diagram of concaveconvex shape and antireflection film is omitted.In addition, in solar battery cell 10,
It is formed with light-receiving surface electrode 12 in the side light-receiving surface 11A of semiconductor substrate, half of the second interarea as semiconductor substrate 11
The back side side 11B of conductor substrate is formed with rear electrode 13.
As shown in Figure 5 and 7, it is formed in the side light-receiving surface 10A of solar battery cell and passes through optical-electronic as aggregation
The multiple light-receiving surface grid electrode 12G of the light-receiving surface collecting electrodes for the electronics that son conversion generates and as junction joint line 20 by
The light-receiving surface bus electrode 12B of smooth surface bonding electrodes.Light-receiving surface grid electrode 12G is the electrode for assembling photoelectric current, in order to
On one side not interfering sunlight to assemble photoelectric current while reaching the inside of solar battery cell 10, by multiple thin linear electrodes
Concurrently form light-receiving surface grid electrode 12G side by side.
In addition, as shown in fig. 7, light-receiving surface bus electrode 12B is along the link direction as solar battery cell 10
First direction, across solar battery cell 10 almost overall length and linear be provided with 4 column.That is, light-receiving surface bus electrode
12B connect with whole light-receiving surface grid electrode 12G and is arranged along the direction orthogonal with light-receiving surface grid electrode 12G.This
Outside, for convenience, in Fig. 1, Fig. 2, Fig. 4 and Fig. 5, the feelings that light-receiving surface bus electrode 12B is equipped with 2 column are shown
Condition.Light-receiving surface bus electrode 12B is the electrode being arranged for electrically engaging with joint line 20.Pass through middle coating in the desired range
Conductive paste with metallic is simultaneously fired and forms light-receiving surface bus electrode 12B and light-receiving surface grid electrode 12G.
As shown in Fig. 6 and Fig. 8, the back side collection containing aluminium (Al) is formed in the back side side 10B of solar battery cell
The electrode 13a and back side bonding electrodes 13b for containing silver-colored (Ag), constitutes rear electrode 13.Back side collecting electrodes 13a be for
It is formed for improving the back surface field layer (not shown) of open-circuit voltage and short circuit current and in order to assemble the electricity of back side
The electrode for flowing and being arranged, has covered the almost all region of the back side 10B of solar battery cell.
In addition, back side bonding electrodes 13b is for taking out in the hole being collected by back side collecting electrodes 13a to outside
And the electrode for contacting and being arranged is obtained with external electrode.That is, back side bonding electrodes 13b is to set for electrically engaging with joint line 20
The electrode set.In the same manner as light-receiving surface bus electrode 12B, back side bonding electrodes 13b is along as solar battery cell 10
The first direction of link direction and be arranged.Then, back side bonding electrodes 13b be configured in across semiconductor substrate 11 and and light
Face bus electrode 12B opposed position.
As shown in figure 8, the back side bonding electrodes 13b of present embodiment is along the connection side as solar battery cell 10
To first direction, across solar battery cell 10 almost overall length and stepping-stone shape is provided with 4 column.By by the back side
Bonding electrodes 13b is formed as stepping-stone shape, is able to suppress the usage amount of silver to inhibit manufacturing cost.As described above, pass through
Coating has the conductive pastes of metallics such as Al or Ag and fires and form back side collecting electrodes in the desired range
13a and back side bonding electrodes 13b.
Fig. 9 is the cross-sectional view for showing the structure of solar battery cell 10 of embodiments of the present invention, is the IX- of Fig. 8
Main portion sectional view at IX line.Figure 10 is to show the structure of the solar battery cells 10 of embodiments of the present invention to cut open
View is the main portion sectional view at the X-X line of Fig. 8.In addition, showing be connected to the sun together in Fig. 9 and Figure 10
The joint line 20 of energy battery unit 10.
It is semiconductor-based being formed as the silicon by the p-type as the first conduction type in solar battery cell 10
The light receiving side on the surface of plate 1 is formed with the p-type impurity as the impurity diffusion layer for having spread p-type impurity by phosphorus diffusion
Diffusion layer 3, and it is formed with the antireflection film 4 formed by silicon nitride film.
The monocrystalline or polycrystalline silicon substrate for being able to use p-type are as semiconductor substrate 1.In addition, semiconductor substrate 1 is not limited to
This, also can be used the silicon substrate of N-shaped.Alternatively, it is also possible to use silicon oxide film as antireflection film 4.In addition, in solar-electricity
The surface of the light receiving side of the semiconductor substrate 1 of pool unit 10 is formed with the minute asperities as texture structure.Minute asperities are
Following construction: increasing and absorb the area from external light in light-receiving surface, inhibits the reflectivity in light-receiving surface, light is closed.
In addition, for convenience, the diagram of minute asperities is omitted in Fig. 9 and Figure 10.
In addition, the light receiving side in semiconductor substrate 1 is provided with above-mentioned light-receiving surface electrode 12, which is worn
Saturating antireflection film 4 and be electrically connected with p-type impurity diffusion layer 3.As light-receiving surface electrode 12, in the light-receiving surface of semiconductor substrate 1
The light-receiving surface grid electrode 12G of multiple elongated strips is arranged side by side in face on direction, also in the light-receiving surface of semiconductor substrate 1
In face mode orthogonal with the light-receiving surface grid electrode 12G on direction be provided be connected with light-receiving surface grid electrode 12G by
Smooth surface bus electrode 12B is electrically connected to p-type impurity diffusion layer 3 in bottom surface sections respectively.
The longitudinal direction of light-receiving surface bus electrode 12B is direction identical with above-mentioned first direction, for by joint line 20
The link direction of multiple solar battery cells 10 of connection.In addition, the longitudinal direction of light-receiving surface bus electrode 12B is set as half
Sum in the face of the conductor substrate 1 second direction identical direction orthogonal with first direction.Using solar battery cell 10
When manufacturing solar cell module, as shown in Fig. 9 and Figure 10, joint line 20 is welded in the light-receiving surface in light-receiving surface electrode 12
Bus electrode 12B.In addition, illustrating only the light-receiving surface bus electrode 12B in light-receiving surface electrode 12 in Fig. 9 and Figure 10.
On the other hand, it at the back side as the face opposed with light-receiving surface in semiconductor substrate 1, is provided on the whole at it
By the aluminium oxide (Al of film thickness about 5nm to 20nm2O3) backside passivation film 5 that is formed and nitrogen oxygen by film thickness about 100nm to 150nm
The epiphragma 6 for the protection backside passivation film 5 that SiClx (SiON) is formed.In addition it is also possible to use silicon nitride film (SiN film) as epiphragma
6.The dotted contact hole 6H penetrated through in a thickness direction is provided in epiphragma 6.In addition, overleaf passivating film 5 is provided with and is arranged
The dotted contact hole 5H of clathrate is arranged into, contact hole 5H is the back side that semiconductor substrate 1 is reached after contact hole 6H extends
Hole.In addition, contact hole 5H to the surface layer at the back side of semiconductor substrate 1 extend, dotted contact hole 1H it is clathrate arrangement and
Setting.
Then, the contact hole 7 for being arranged in clathrate is constituted by contact hole 6H, contact hole 5H and contact hole 1H.Contact hole 7
The face along semiconductor substrate 1 in section be set as round.In addition, in the case where not formed epiphragma 6, by contact hole
5H and contact hole 1H constitutes contact hole 7.In addition, contact hole 7 diametrically the circle of about 20nm to 100nm and with 0.5mm to 1mm's
Interval is set.In addition, the section in the face along semiconductor substrate 1 of contact hole 7 is not limited to round.
In addition, at the back side of semiconductor substrate 1, above-mentioned rear electrode 13 be electrically connected to the back side of semiconductor substrate 1 and
Setting.Back side collecting electrodes 13a is provided with as rear electrode 13, back side collecting electrodes 13a filling contact hole 7 and carried on the back
The entirety of backside passivation film 5 is covered in the face of face passivating film 5 on direction.In addition, being additionally provided on the back side of semiconductor substrate 1
By the back side bonding electrodes 13b that back side collecting electrodes 13a is surrounded and is electrically connected with back side collecting electrodes 13a.Back side collecting electrodes
13a is set as in contact hole 1H and the dotted point contact that is electrically connected of ground in the back side of semiconductor substrate 1.Such as Fig. 9 and Figure 10 institute
Show, when manufacturing solar cell module 100, the back side bonding electrodes 13b that joint line 20 is welded among rear electrode 13.
The solar battery cell 10 of present embodiment with a thickness of 200 μm, longitudinal width 156mm, transverse width is
156mm.The width of light-receiving surface bus electrode 12B is 1mm, length 155mm, in the light receiving side of solar battery cell 10,
With the interval configuration of 39mm and there are 4 light-receiving surface bus electrode 12B in position.The width of light-receiving surface grid electrode 12G be 50 μm extremely
100 μm, length 155mm, using the direction kept straight on the longitudinal direction of light-receiving surface bus electrode 12B as longitudinal direction, with 1mm
To the interval of 2mm, it is equally spaced 156 to 78 light-receiving surface grid electrode 12G.
Back side bonding electrodes 13b has the square shape that width is 2mm, length is 2mm, in solar battery cell 10
The position corresponding with light-receiving surface bus electrode 12B of back side equably configured in a row with the interval of 26mm to 15mm
Have each column 6 to 10, totally 4 column back side bonding electrodes 13b, the column-shaped is with the longitudinal direction with light-receiving surface bus electrode 12B
Parallel direction is longitudinal direction.
In addition, the area peripheral edge to connect with back side collecting electrodes 13a in the surface layer at the back side of semiconductor substrate 1 is formed
There is a back surface field (Back Surface Field, BSF) 8, which is aluminium from back side collecting electrodes 13a to semiconductor
P+ region of the back side of substrate 1 after surface layer is spread in high concentration.That is, in the surface layer at the back side of semiconductor substrate 1 with
Contact hole 1H adjacent region is formed with BSF layer 8.In the back side of semiconductor substrate 1, is generated electricity and generated by solar battery cell
Electric power flowed through with the path of the layer 8 from semiconductor substrate 1 to BSF, back side collecting electrodes 13a, back side bonding electrodes 13b.
Figure 11 is the enlarged view of the main part at the back side of the solar battery cell 10 of embodiments of the present invention.Such as Fig. 8
Shown, in solar battery cell 10, contact hole 7 is arranged at the joint line join domain in the back side of semiconductor substrate 1
Region other than 14.That is, the joint line join domain 14 at the straight back side is not provided with contact hole 7 in solar battery cell 10.
Joint line join domain 14 be set region in the back side of semiconductor substrate 1 with jointing line 20 or
A possibility that jointing line 20 the high corresponding region in region, across solar battery cell 10 entire transverse width and set
It sets.High region referred to deviateing set link position and was connected to joint line 20 a possibility that so-called jointing line 20
In the case of, a possibility that jointing line 20 high region.At the back side of semiconductor substrate 1, according to such as width 2mm × length
4 groups of joint line join domains 14 are arranged with the interval of 39mm in the width of 156mm.In addition, in fig. 8, for convenience, joint line
It has been more than the region of transverse width in the back side of join domain 14 including semiconductor substrate 1, and shown in dotted line.
As shown in figure 11, joint line join domain 14 includes: first area 14a, to engage in a first direction with the back side
Electrode 13b adjacent region；And second area 14b, it is when the width of joint line 20 is set as W in solar battery cell
Away from an opposite side W/2 distance range along a first direction in the second direction orthogonal with first direction in the face at 10 back side
Region.Second direction is the Y-direction in figure, is the width direction of back side bonding electrodes 13b.
When the electrode jointing line 20 to solar battery cell 10 is to manufacture solar cell module 100, such as Fig. 9
And shown in Figure 10, joint line 20 is welded in light-receiving surface bus electrode 12B and back side bonding electrodes 13b.Then, due to connecing
Head line 20 soldering in heating and solar battery cell 10b generate residual thermal stress.Due to the cooling after heating
When light-receiving surface bus electrode 12B and the difference of thermal contraction of back side bonding electrodes 13b and joint line 20 cause to generate residual heat
Stress, therefore overleaf bonding electrodes 13b is nearby and light-receiving surface bus electrode 12B nearby generates the residual thermal stress.Semiconductor
The thickness of substrate 11 is about 200 μm, very small compared with the configuration space of back side bonding electrodes 13b, will not be by semiconductor substrate
11 thickness mitigates, and also conducts to the back side of semiconductor substrate 11.
In addition, in order to be connected with each other between solar battery cell 10 using joint line 20, light-receiving surface bus electrode 12B
Corresponding position is arranged in the face of semiconductor substrate 1 with back side bonding electrodes 13b.Therefore, the back side of semiconductor substrate 1
Back side bonding electrodes 13b in side is nearby by the residual overleaf generated near bonding electrodes 13b in jointing line 20
The influence of thermal stress, and by the residual thermal stress generated near light-receiving surface bus electrode 12B in jointing line 20
Influence, be applied many residual thermal stress.That in the back side of semiconductor substrate 1 includes above-mentioned first area 14a and second
The joint line join domain 14 of region 14b may be especially prone to for the back side in semiconductor substrate 1 by back side bonding electrodes
The influence of residual thermal stress caused by 13b jointing line 20 and by light-receiving surface bus electrode 12B jointing line 20
The region of the influence of caused residual thermal stress.
It is answered when residual thermal stress is applied with heat to the part of the contact hole 1H at the back side for being set to solar battery cell 10
When power, generate in semiconductor substrate 1 using contact hole 1H as the crackle of starting point.Then, the generation of the crackle, which not only incurs, is manufacturing
The deterioration of fabrication yield when solar cell module 100 also becomes to using solar battery cell 10 to constitute too
It is positive can battery module 100 when being applied with external force, cause the output by caused by the intensity decline of solar cell module decline from
And the reason of making the reliability decrease of solar cell module 100.
Then, in the present embodiment, by by contact hole 7, in further detail for be to be set to contact hole 1H partly to lead
Region other than the joint line join domain 14 at the back side of structure base board 1, be able to suppress near light-receiving surface bus electrode 12B and
The influence for the residual thermal stress docking contact hole 1H that back side bonding electrodes 13b is nearby generated.That is, in solar battery cell 10,
By as being influenced and residual thermal stress caused by back side bonding electrodes 13b jointing line 20 by total to light-receiving surface
Joint line near the back side bonding electrodes 13b of the influence of residual thermal stress caused by line electrode 12B jointing line 20 connects
It connects region 14 and is not provided with contact hole 1H.
Hereby it is possible to inhibit solar battery cell 10 due near light-receiving surface bus electrode 12B and the back side engagement
Electrode 13b nearby generate residual thermal stress influence and the contact hole 1H to the back side for being set to semiconductor substrate 1 part
Apply thermal stress, and is cracked in solar battery cell 10.Therefore, be able to suppress solar battery cell 10 due to by
The manufacture of above-mentioned solar battery cell 10 caused by the influence for the residual thermal stress that smooth surface bus electrode 12B is nearby generated at
The deterioration of product rate and the output of solar cell module 100 reduce.That is, passing through the joint line at the back side of semiconductor substrate 1
Contact hole 7 is arranged in region other than join domain 14, inhibits the docking touching of the residual thermal stress as caused by the connection of joint line 20
The influence of hole 1H, so as to inhibit using contact hole 1H as the generation of the crackle of starting point.
Here, being preferably not provided with contact hole due to worrying also to generate residual thermal stress in the surface of joint line 20
7.It is therefore preferred that not set in the first area 14a as region adjacent with back side bonding electrodes 13b in a first direction
Set contact hole 7.I.e., it is preferable that avoid the first area as region adjacent with back side bonding electrodes 13b in a first direction
14a and contact hole 7 is set.
In addition, the feelings of set link position are deviateed in the position that there is generation joint line 20 in the connection of joint line 20
Condition.Preferably, it is contemplated that deviate and be formed selectively contact hole 7 in the position of such joint line 20.About joint line 20
Position is deviateed, when considering from the current collection effect of back side bonding electrodes 13b, it is preferable that in the width direction of joint line 20
The region of more than half and back side bonding electrodes 13b solder joints.When the width of joint line 20 is set as W, it is preferable that will not
The non-contact bore region for forming contact hole 7 is set as considering the range of the W/2 of the position deviation of the joint line 20.That is, In
Second orthogonal with first direction when the width of joint line 20 is set as W, in the face at the back side of solar battery cell 10
On direction, as shown in figure 11, it is preferable that second of the region in the range for being W/2 as the distance away from opposite side 13s, a 13s
Region 14b is not provided with contact hole 7.I.e., it is preferable that avoid as area adjacent with back side bonding electrodes 13b in a first direction
The second area 14b in domain and contact hole 7 is set.
In addition, in solar battery cell 10, in order to ensure light-receiving area broadness, by light-receiving surface bus electrode 12B's
Width and the width of joint line are set as identical width, such as are set as 1mm width.On the other hand, consider back side bonding electrodes 13b
And the accuracy of manufacture of joint line, the width of back side bonding electrodes 13b is set as to the width of about 1mm wider than the width of joint line,
Such as it is set as the width of about 2mm.Then, in this case, as shown in figure 11, when the width of joint line 20 is set as W, second
The width of back side bonding electrodes 13b on direction is 2W, in the center C of the bonding electrodes 13b away from the back side in second direction
Distance be 2W in the range of be not provided with contact hole 7.That is, at the back side of semiconductor substrate 1, not only jointing line 20 both
Fixed region is not provided with contact hole 7, and in the case where joint line 20 deviates from set link position and has been connected, In
A possibility that jointing line 20, high region was also not provided with contact hole 7.Accordingly, even if in joint line 20 from set connection position
Deviation is set in the case where being connected, can also obtain above-mentioned effect.
Next, being illustrated to the manufacturing method of the solar cell module 100 of above-mentioned present embodiment.
(production of solar battery cell)
Firstly, production solar battery cell 10.Figure 12 is the solar battery cell for showing embodiments of the present invention
The flow chart of the sequence of 10 manufacturing method.Figure 13 is to show embodiments of the present invention too to Figure 20, Figure 22 and Figure 23
The cross-sectional view of the manufacturing method of positive energy battery unit 10.Figure 21 is the back for showing semiconductor substrate in embodiments of the present invention
The diagrammatic top view in the region of the formation contact hole in surface side.
Figure 13 is to show the semiconductor substrate 1 formed in embodiments of the present invention by the silicon for being doped with the p-type of boron (B)
In damaging layer 15 existing concept map.Figure 14 be show eliminate in embodiments of the present invention be present in it is semiconductor-based
The concept map of the state of the damaging layer 15 on the surface of plate 1.In Figure 13 and Figure 14, shows and cut as by scroll saw from silicon ingot
The semiconductor substrate 1 of the monocrystalline silicon substrate for the p-type cut.In order to form the monocrystalline silicon substrate of p-type, such as pass through crystal pulling legal system
Make cylindrical ingot.Hole is generated in silicon in the doping boron for example in the silicon after 1400 DEG C or so meltings, and passes through crystal pulling method
It draws, to obtain columned p-type silicon ingot.
In general, becoming low resistance in silicon ingot by adulterating boron in silicon, on the other hand, under the purity due to worrying silicon
Drop, the electronics that can be taken out tails off and crystal quality reduces, it is therefore desirable to pay attention to the doping of boron.It is well known that such
The decline of purity especially shows significantly in the case where quality stable monocrystalline silicon, is mostly to carry out pipe by the resistivity of silicon
Reason.In addition, it is necessary to note that following aspect: there are impurity as tungsten, titanium, iron, aluminium and nickel in silicon, to form crystal
The central portion of defect and the band gap in silicon forms energy level, accelerates in the generation of the inside of the silicon substrate of solar battery cell 10
Carrier it is compound, the electric current that can be taken out tails off.
After columned p-type silicon ingot is cut into the block of cast ingot dimension by band saw, further cut using multi-wire saw
Piece is processed into the semiconductor substrate 1 used for solar batteries of practical size.Utilizing the semiconductor substrate 1 after multi-wire saw slice
Surface, remaining due to machining generate damaging layer 15, it is high that photoelectric conversion efficiency can not be made with such state
Solar battery cell 10.Therefore, by using using sodium hydroxide or potassium hydroxide as the caustic-alkali aqueous solution of representative
Etch or used the etching of the acid solutions such as the mixed solution of hydrofluoric acid and nitric acid about at room temperature to carry out damaging layer 15
Removal.Damaging layer 15 is different according to the mode of the slice of p-type silicon substrate, usually the depth of about 10 μm of remaining.In addition, according to damage
The remaining degree for hurting layer 15 needs to keep etch processes time variable.
Figure 15 is to show to form the texture erosion of texture structure on the surface of semiconductor substrate 1 in embodiments of the present invention
Carve the schematic sectional view of process.After removing damaging layer 15, in step slo, by being etched to the semiconductor substrate 1,
As shown in figure 15, texture is used as in the minute asperities 2 that the surface of semiconductor substrate 1 forms the size that depth is about 1 μm to 10 μm
Construction.The etching for forming texture structure usually uses in the alkaline aqueous solution as sodium hydrate aqueous solution more is mixed with isopropyl
The mixed solution method of alcohol (Isopropyl Alcohol, IPA) is handled, but can also select dry etching.
In the semiconductor substrate 1 of removal processing for implementing damaging layer 15 as shown in figure 14, it is incident in the light quilt on surface
Reflection 35% or so, the light quantity being taken into semiconductor substrate 1 tails off.Line is formed by the light receiving side in semiconductor substrate 1
Reason construction, makes light in the diffusion reflection surface of minute asperities 2, and the multiple anti-of light occurs on the surface of solar battery cell 10
It penetrates, effectively reflectivity can be made to decline.Then, by increasing the light quantity being taken into semiconductor substrate 1, it can be improved and pass through
The current value that solar battery cell 10 takes out, can be improved photoelectric conversion efficiency.
Figure 16 is to show to expand in the impurity that semiconductor substrate 1 forms p-type impurity diffusion layer 3 in embodiments of the present invention
The schematic sectional view of day labor sequence.After forming texture structure, in step S20, the essential structure as solar battery is formed
PN junction.Make phosphorus (P) from diffusion into the surface by thermal diffusion for the semiconductor substrate 1 for foring texture structure on surface, such as
Shown in Figure 16, forming sheet resistance in the superficial layer of semiconductor substrate 1 is about 60 Ω/sq. to 200 Ω/sq. n
Type impurity diffusion layer 3, to form PN junction.For semiconductor substrate 1 phosphorus gas phase diffusion usually in phosphorus oxychloride (POCl3)
It is carried out under atmosphere.
Here, as shown in figure 16, since the surface of the semiconductor substrate 1 after newly formed p-type impurity diffusion layer 3 is formed
Have as with glass film as main component, contain P2O5And SiO2Phosphorus glass layer 3a, therefore use is using hydrofluoric acid as representative
Treatment fluid remove.By removing phosphorus glass layer 3a, the transmittance of light is improved, and can prevent in solar battery cell
The carrier occurred in 10 it is compound.
In addition, in order to stabilize phosphorus to the diffusion concentration of semiconductor substrate, being adopted in the diffusing procedure of common phosphorus more
With following gimmick: after keeping phosphorus diffusion primary, the diffusion layer of the surface element of substrate being etched, later further in high temperature
Diffusing procedure drives in (Drive in) process again for lower implementation.
Figure 17 is to show the signal of the planarization process of the back side of semiconductor substrate 1 in embodiments of the present invention to cut open
View.After forming PN junction, in step s 30, implement the p-type impurity diffusion that removal is formed in the back side of semiconductor substrate 1
Layer 3 and the planarization process for planarizing the back side of semiconductor substrate 1.Accordingly, it obtains forming p-type impurity in light receiving side
The semiconductor substrate 11 that diffusion layer 3 and the back side have been flattened.
Firstly, after the protective film as resist or acid resistance resin protects light receiving side, it will be semiconductor-based
Plate 1 is immersed in fluorination nitric acid solution, to remove the end face of semiconductor substrate 1 and the p-type impurity diffusion layer 3 of back side.In
It is in the state of protecting light receiving side, to be etched with the mixed acid or alkaline aqueous solution of aqueous hydrogen fluoride solution and nitric acid
The back side of semiconductor substrate 1, to keep the back side of semiconductor substrate 1 flat.The planarization process at the back side of the semiconductor substrate 1
To construct for stablizing PERC and carrying out making necessary processing.
In addition, can not also be pre-formed p-type impurity diffusion layer 3 in the back side of semiconductor substrate 1.
Figure 18 is to show to form backside passivation film 5 and lid at the back side of semiconductor substrate 1 in embodiments of the present invention
The schematic sectional view of the process of film 6.Here, being said to the case where further forming epiphragma 6 on overleaf passivating film 5
It is bright.It will be about 5nm to 20nm by film thickness as shown in figure 18 in step s 40 after by the planarized back of semiconductor substrate 1
Aluminium oxide (Al2O3) formed backside passivation film 5 and be about 100nm to 150nm by film thickness silicon oxynitride film (SiON) formed
The sequentially forming on the back side of semiconductor substrate 1 with backside passivation film 5 and epiphragma 6 of epiphragma 6.It is able to use such as plasma
Body chemical vapor deposition forms backside passivation film 5 and epiphragma 6.
By forming backside passivation film 5, inhibit the boundary of the silicon face and backside passivation film 5 at the back side of semiconductor substrate 1
The disappearance of carrier at face, and overleaf on passivating film 5 the long feux rouges of reflection wavelength and return in semiconductor substrate 1, can
Expect the effect of raising photoelectric conversion efficiency.
Figure 19 is to show to form antireflection film 4 in the light receiving side of semiconductor substrate 11 in embodiments of the present invention
The schematic sectional view of process.It, in step s 50, as shown in figure 19, will be by film thickness about after forming backside passivation film 5 and epiphragma 6
The semiconductor substrate 1 for foring p-type impurity diffusion layer 3 is formed in for the antireflection film 4 that the SiNHO film of 65nm to 90nm is formed
Light receiving side, i.e., on p-type impurity diffusion layer 3.That is, for the closing of light being effectively performed into semiconductor substrate 11 and taking
Enter, on the basis of above-mentioned texture structure, forms the different film of refractive index in the light incident surface of semiconductor substrate 11.It uses
Such as (Chemical Vapor Deposition, CVD) method is deposited to form antireflection film 4 in plasma chemistry, uses silicon
The mixed gas of alkane, ammonia and oxygen forms silicon nitride film as antireflection film 4.In addition it is also possible to form silicon oxide film as counnter attack
Penetrate film 4.
Antireflection film 4 is formed by using plasma CVD method, while forming antireflection film 4, in antireflection film 4
Forming process in the hydrogen ion that generates and free radical eliminate the suspension existing for the surface of semiconductor substrate 11 and crystal boundary
Key can obtain crystalline quality improvement effect.Dangling bonds mean that the key of the bonding of existing silicon atom on the surface of the substrate is disconnected
Energy level can be moved to the end of band gap and made by the state split by being allowed in conjunction with the hydrogen ion and free radical
Recombination velocity decline.
About antireflection film 4, by using in the light of the surface of antireflection film 4 and the surface reflection of semiconductor substrate 11
The period of interference, the two deviates half-wavelength and cancels out each other, and the state that inspection does not measure reflected light can be described as state appropriate.But
It is, using solar cell module as when product treatment, it is also desirable to dispose portion as aftermentioned cover glass and sealing element
Part, it should be noted that the specification of above-mentioned antireflection film appropriate 4 can change.
Figure 20 is to show the process for forming contact hole 7 in the back side of semiconductor substrate 1 in embodiments of the present invention
Schematic sectional view.By forming backside passivation film 5 and epiphragma 6, the back side of semiconductor substrate 1 at the back side of semiconductor substrate 1
As insulation structure.Therefore, it in step S60, in order to which the back side and the rear electrode 13 of semiconductor substrate 1 is connected, needs to set
Set contact hole 7.
Firstly, the entire surface in the region other than joint line join domain 14 in the back side of semiconductor substrate 1
Dotted contact hole 6H and dotted contact hole 5H is formed, contact hole 6H penetrates through epiphragma 6 on film thickness direction and has both
Fixed contact bore dia, contact hole 5H penetrate through backside passivation film 5 on film thickness direction and have set contact bore dia.Make
Contact hole 6H and contact hole 5H are formed to have to the clathrate at set interval with such as laser.In addition, not forming lid
Film 6 and in the case where being simply formed with backside passivation film 5, only form contact hole 5H.
Next, being formed in the back side of semiconductor substrate 1 in region corresponding with the lower part of contact hole 5H using laser
Contact hole 1H with set contact bore dia identical with contact hole 5H and set contact hole depth.Accordingly, half
The contact hole 7 that the back side of conductor substrate 1 forms contact hole 6H, contact hole 5H is connected to contact hole 1H, the contact hole 7 have
Set contact bore dia and set contact hole depth.
Figure 21 is to show contact hole 7 formed in the back side of semiconductor substrate 1 in embodiments of the present invention
The diagrammatic top view in region.As described above, contact hole 7 is covered with the joint line join domain 14 in the back side of semiconductor substrate 1
Region in addition and configure dottedly.Contact hole 7 is equally spaced configured at semiconductor substrate 1 with the interval of about 0.5mm to 1mm
The back side it is whole.In Figure 21, it is schematically shown that the interval of adjacent contact hole 7 and quantity.
In addition, the formation about contact hole, usually carries out the mechanical hole machined according to laser irradiation, however, it is also possible to
Hole machined is replaced using having the electrode material for going through fiery (Fire through) performance when forming rear electrode 13.
Figure 22 is to show that light-receiving surface electrode 12 and rear electrode 13 will be used to form in embodiments of the present invention
Electrode material slurry is printed in the schematic sectional view on the surface of semiconductor substrate 11 and the process at the back side.In step S70, such as scheme
Shown in 22, starched using as the electrode material of the back side bonding electrodes 13b, back side bonding electrodes material comprising silver and glass
Expect 16a, the pattern of back side bonding electrodes 13b is selectively printed in the back side of semiconductor substrate 11 by silk screen print method
Epiphragma 6 on.On epiphragma 6, back side bonding electrodes material paste 16a is printed in the joint line connection of not formed contact hole 7
The set forming region in region 14, and printing is the clathrate with set interval.Not formed epiphragma 6 the case where
Under, back side bonding electrodes material paste 16a is printed in backside passivation film 5.
Later, back side bonding electrodes material paste 16a is dry.Silk-screen printing uses common screen process press.That is, logical
Crossing scans scraper plate on mask to print in the state of carrying electrode material slurry, via mask to print, by electrode material
Slurry is printed in the printing surface in semiconductor substrate 11.
Next, in step S80, as shown in figure 22, using as the electrode material of back side collecting electrodes 13a, packet
Back side collecting electrodes material paste 16b containing aluminium and glass is selected the pattern of back side collecting electrodes 13a by silk screen print method
Selecting property it is printed in the back side of semiconductor substrate 11.Back side collecting electrodes material paste 16b is the expansion comprising the first conduction type
Dissipate the electrode material slurry in source.In the back side of semiconductor substrate 11, with filling contact hole 7 and in the back of semiconductor substrate 11
The whole mode printed back collecting electrodes material paste 16b of epiphragma 6 is covered in the face in face on direction.That is, back side current collection is electric
Pole material paste 16b is connected between adjacent contact hole 7 and is printed.Back side collecting electrodes material paste 16b is surrounding the back side
It is printed in the state of connection electrode material paste 16a.Later, back side collecting electrodes material paste 16b is dry.
Next, in step S90, as shown in figure 22, on the antireflection film 4 of the light receiving side of semiconductor substrate 11,
As the electrode material of light-receiving surface electrode 12, the light-receiving surface electrode material comprising silver and glass is starched by silk screen print method
Material 16c selectively prints the shape for light-receiving surface electrode 12.That is, light-receiving surface electrode material slurry 16c is selectively printed
For the pattern of light-receiving surface grid electrode 12G and the pattern of light-receiving surface bus electrode 12B.
Figure 23 is to show in embodiments of the present invention fired electrodes material paste simultaneously and form light-receiving surface electrode 12
And the schematic sectional view of the process of rear electrode 13.Next, in the step s 100, in an atmosphere or in oxygen atmosphere, In
Such as with 2 seconds to 10 seconds time at a temperature of 700 DEG C to 900 DEG C, while firing back side connection electrode material paste 16a, back
The printed patterns of face collecting electrodes material paste 16b and light-receiving surface electrode material slurry 16c.By firing, by electrode material
The heat resolves such as the organic solvent that slurry contains are allowed to be changed into as the preferred low-resistance state of electrode, and in electrode
Ensure Ohmic contact between semiconductor substrate 11.
That is, as shown in figure 23, antireflection film 4 is gone through to fight by light-receiving surface electrode material slurry 16c to be passed through by being fired
It is logical, form the light-receiving surface electrode 12 be connected with p-type impurity diffusion layer 3.
In addition, as shown in figure 23, forming back side collecting electrodes 13a and back side bonding electrodes 13b, and semiconductor-based
The area peripheral edge to connect with back side collecting electrodes 13a in the surface layer at the back side of plate 11, which is formed, is used as aluminium from back side collecting electrodes
13a spread in high concentration after the region p+ BSF layer 8, which is electrically connected in contact hole 7 with back side collecting electrodes 13a.
That is, the back side collecting electrodes material paste 16b being printed in contact hole 7 and the silicon at the back side of semiconductor substrate 11 generation eutectic are anti-
It answers and forms BSF layer 8, and form the point contact for being electrically connected to BSF layer 8.
In light-receiving surface electrode 12, due to needing perforation to ensure as the antireflection film 4 of insulating film and in antireflection film 4
Under the good electrical contact of existing p-type impurity diffusion layer 3 glass material is mixed at least in light-receiving surface grid electrode 12G
Enter electrode material slurry.Then, when firing, in the melting of electrode material slurry, glass material and the nitrogen as antireflection film 4
SiClx film, titanium oxide generation are co-melting, and the silver as metal component is also included within interior and reaches p-type impurity diffusion layer 3.
But due to incurring solar battery in the case where the silver as metal component does not reach p-type impurity diffusion layer 3
The characteristic of the Fill factor (Fill Factor, FF) of unit 10 declines, and the silver as metal component is reached to spread than p-type impurity
When the position of 3 depth of layer, revealed in the power generation of solar battery cell 10, it is therefore desirable to pay attention to.
In addition, the diffusion length of carrier becomes smaller and makes crystallinity due to known when cast base plate is exposed under high temperature
Deteriorate, it is therefore preferred that low temperature as far as possible and in the short time handle electrode firing.
In addition, existing in above-mentioned PERC structural unit and deteriorating (Light by the caused photoinduction performance of light irradiation
Induced Degradation, LID) become problem the case where.Known this is that electronics or hole are mobile to boron in body silicon
(B) and oxygen (O) to becoming unstable state, compared with the solar battery cell overleaf with BSF construction, deterioration
Also become more significant.
It is known especially depend on boron (B) doping low-resistivity substrate in, photoinduction performance deterioration become more to show
It writes.In order to inhibit the photoinduction performance to deteriorate, it is known that pass through about 100 DEG C to 250 DEG C or so of the height of existing while irradiation light
Temperatureization is made annealing treatment, make boron (B) and O (oxygen) to stabilized technology, preferably in low-resistivity p-type PERC structural unit
It is middle to implement the processing.
By the process more than implementing, solar battery cell 10 is obtained.In addition it is also possible to pass through sputtering method or transfer
Other methods as method carry out electrode material slurry.
(connection of joint line)
Next, joint line 20 is connected to solar battery cell 10.That is, by the region of the one end in joint line 20
It is configured on the back side bonding electrodes 13b of the back side 10B formation of solar battery cell, and will be another in the joint line 20
The region of end side is configured at the light-receiving surface bus electrode 12B in the light-receiving surface 10A formation of adjacent solar battery cell.So
Afterwards, it is melted by the solder that joint line 20 covers by heating, later, cooled and solidified.Accordingly, it carries out in butt joint line 20
The region and light-receiving surface bus electrode 12B of the region of one end and back side bonding electrodes 13b and the another side in joint line 20
Solder joints, 20 electrical resistance of joint line and be mechanically connected to solar battery cell 10.
Figure 24 is to show light-receiving surface electrode 12 and rear electrode 13 and joint line 20 in embodiments of the present invention
The schematic diagram of the joint line bonding process electrically engaged.As shown in figure 24, it is overlapped in by the region of the one end in joint line 20
The region of another side in joint line 20 is simultaneously overlapped in (not shown) by the back side bonding electrodes 13b of solar battery cell 10
In the state of light-receiving surface bus electrode 12B, by 200 heated coupling line 20 of heating tool, while joint line 20 and the back side are obtained
Bonding electrodes 13b electrically engage and mechanicalness engagement and joint line 20 and light-receiving surface bus electrode 12B electrically engage and machine
Tool engagement.In addition it is also possible to using use conductive paste or adherence conductive film (Conductive Film,
CF engagement), the connection of Lai Jinhang solar battery cell 10 and joint line 20.
As shown in figure 24, when joint line 20 is connected to solar battery cell 10, thermal stress is applied to solar-electricity
Pool unit 10, by the cooling in atmosphere, on the periphery of joint line 20, the i.e. periphery of light-receiving surface bus electrode 12B and back
The periphery of face bonding electrode 13b generates residual thermal stress.
However, as described above, contact hole 7 is formed in semiconductor in the solar battery cell 10 of present embodiment
The region other than joint line join domain 14 in the back side of substrate 11.Hereby it is possible to inhibit as described above to solar energy
Residual thermal stress when the light-receiving surface bus electrode 12B and back side bonding electrodes 13b jointing line 20 of battery unit 10
Under the deterioration of fabrication yield and the output of solar cell module 100 that influence caused solar battery cell 10
Drop.
Figure 25 is the perspective view for showing the solar battery string 50 of embodiments of the present invention.Joint line 20 more than repeating
Connection processing, as shown in figure 25, form multiple sun that the solar battery cell 10 of desired number is connected in series
It can battery strings 50.Then, the multiple solar battery strings 50 obtained as described above are connected by horizontal joint line 25 and is formed
Solar battery array 70.By using the busbar as horizontal joint line 25 by multiple solar battery strings 50 of parallel configuration
It is connected in series, and is provided as the busbar of the out splice going splice line 26 for taking out electric power, to form solar battery array
70。
Due to also applying thermal stress to solar battery cell 10 in the production process of solar battery string 50, there is
A possibility that semiconductor substrate 1 is generated using contact hole 1H as the crackle of starting point.
However, as described above, contact hole 7 is formed in semiconductor in the solar battery cell 10 of present embodiment
The region other than joint line join domain 14 in the back side of substrate 1.Hereby it is possible to inhibit as described above to solar-electricity
The shadow of residual thermal stress when the light-receiving surface bus electrode 12B and back side bonding electrodes 13b jointing line 20 of pool unit 10
Ring the deterioration of the fabrication yield of caused solar battery cell 10 and the output decline of solar cell module 100.
(formation of laminated body)
Next, the configuration gone out according to Fig.2, light receiving side sealing element 33 and light-receiving surface guard member 31 are configured at too
The light receiving side of positive energy cell array 70, is configured at solar battery array 70 for back side side seal 34 and back-protective part 32
Back side and form laminated body.
(lamination treatment)
Next, laminated body is installed on laminater, carried out at 140 DEG C or more and 160 DEG C or less 30 minutes or so
Heat treatment and lamination treatment.Accordingly, each component of laminated body is via light receiving side sealing element 33, back side side seal 34 and back
Face guard block 32 and be integrated, obtain solar cell module 100.
Solar cell module 100 is set to outdoor, the external force such as the load or wind of snow be applied in surface cover glass with
And the situation of back side notacoria is much.At this moment, the solar battery cell 10 in packaged inside also generates stress, from
And there is also generate in semiconductor substrate 1 using contact hole 1H as the crackle of starting point and lead to the risk of power generation decline.
However, as described above, contact hole 7 is formed in semiconductor in the solar battery cell 10 of present embodiment
The region other than joint line join domain 14 in the back side of substrate 1.Hereby it is possible to inhibit as described above to solar-electricity
The shadow of residual thermal stress when the light-receiving surface bus electrode 12B and back side bonding electrodes 13b jointing line 20 of pool unit 10
Ring the deterioration of the fabrication yield of caused solar battery cell 10 and the output decline of solar cell module 100.
As described above, in the solar battery cell of present embodiment 10, the contact hole 7 for being set to back side is limited
The region other than joint line join domain 14 in the back side of semiconductor substrate 1 and be formed selectively.Therefore, as above-mentioned,
Solar battery cell 10 is sought by the passivation effect in the back side by 5 bring semiconductor substrate 11 of backside passivation film
Characteristic improves, and is able to suppress to 13 jointing of the light-receiving surface electrode 12 of solar battery cell 10 and rear electrode
The generation of failure caused by line 20.
Structure shown by above embodiment is to show an example of the contents of the present invention, also can with others known in
Technical combinations, in the range for not departing from purport of the invention, also can by structure a part omit, change.
Claims (6)
1. a kind of solar battery cell, which is characterized in that have:
The silicon substrate of first conduction type；
Backside passivation film is formed in the back side opposed with light-receiving surface in the silicon substrate；
Multiple contact holes penetrate through the backside passivation film and reach described in the silicon substrate from the surface of the backside passivation film
The surface layer at the back side；
Multiple first rear electrodes, are arranged side by side along a first direction in the backside passivation film, for connecting along described
The band-like joint line of first direction；And
Back side collecting electrodes connect the silicon substrate in the contact hole with first rear electrode,
It avoids that the adjacent region of the first rear electrode is provided with the contact hole in said first direction.
2. solar battery cell according to claim 1, which is characterized in that
It includes quadrangle along an opposite side of the first direction that first rear electrode has in the face at the back side
Shape,
The second party orthogonal with the first direction when the width of the joint line is set as W, in the face at the back side
Upwards, it avoids that the pair of side W/2 distance range is provided with the contact hole.
3. solar battery cell according to claim 2, which is characterized in that
The width of first rear electrode in the second direction is 2W,
The center 2W distance range away from first rear electrode is avoided in this second direction and is provided with described connect
Contact hole.
4. a kind of solar cell module, which is characterized in that have:
First solar battery cell；
Second solar battery cell is arranged side-by-side with first solar battery cell；And
Band-like joint line, will be set to the light-receiving surface electrode of the light receiving side of first solar battery cell with described
Second solar battery cell is set to the first rear electrode connection at the back side opposed with light-receiving surface,
First solar battery cell and second solar battery cell include
The silicon substrate of first conduction type；
Backside passivation film is formed in the back side of the silicon substrate；
Multiple contact holes penetrate through the backside passivation film and reach described in the silicon substrate from the surface of the backside passivation film
The surface layer at the back side；
Multiple first rear electrodes, are arranged side by side along a first direction in the backside passivation film；And
Second rear electrode connects the silicon substrate in the contact hole with first rear electrode,
It avoids that the adjacent region of the first rear electrode is provided with the contact hole in said first direction.
5. solar cell module according to claim 4, which is characterized in that
It includes quadrangle along an opposite side of the first direction that first rear electrode has in the face at the back side
Shape,
The second party orthogonal with the first direction when the width of the joint line is set as W, in the face at the back side
Upwards, it avoids that the pair of side W/2 distance range is provided with the contact hole.
6. solar cell module according to claim 5, which is characterized in that
The width of first rear electrode in the second direction is 2W,
The center 2W distance range away from first rear electrode is avoided in this second direction and is provided with described connect
Contact hole.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2017/011256 WO2018173125A1 (en) | 2017-03-21 | 2017-03-21 | Solar cell and solar module |
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| CN110419112A true CN110419112A (en) | 2019-11-05 |
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| CN201780087633.2A Pending CN110419112A (en) | 2017-03-21 | 2017-03-21 | Solar battery cell and solar cell module |
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| JP (1) | JPWO2018173125A1 (en) |
| CN (1) | CN110419112A (en) |
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| WO (1) | WO2018173125A1 (en) |
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| CN102687279A (en) * | 2009-11-13 | 2012-09-19 | 三菱电机株式会社 | Solar cell |
| WO2016047564A1 (en) * | 2014-09-22 | 2016-03-31 | 京セラ株式会社 | Solar cell element |
| JP2016164969A (en) * | 2015-02-26 | 2016-09-08 | 京セラ株式会社 | Solar cell element and method of manufacturing the same |
| JP2017045907A (en) * | 2015-08-28 | 2017-03-02 | 京セラ株式会社 | Solar cell element and manufacturing method therefor |
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| JP2007266262A (en) * | 2006-03-28 | 2007-10-11 | Sharp Corp | Solar cell with interconnector, solar cell module, and method for manufacturing solar cell module |
| WO2009128678A2 (en) * | 2008-04-17 | 2009-10-22 | Lg Electronics Inc. | Solar cell and method of manufacturing the same |
| EP2443662B1 (en) * | 2009-06-18 | 2019-04-03 | LG Electronics Inc. | Solar cell |
| KR101258938B1 (en) * | 2011-07-25 | 2013-05-07 | 엘지전자 주식회사 | Solar cell |
| TWI590473B (en) * | 2014-10-24 | 2017-07-01 | 昱晶能源科技股份有限公司 | Solar cell and method for manufacturing the same |
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- 2017-03-21 JP JP2019506585A patent/JPWO2018173125A1/en active Pending
- 2017-03-21 WO PCT/JP2017/011256 patent/WO2018173125A1/en active Application Filing
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102687279A (en) * | 2009-11-13 | 2012-09-19 | 三菱电机株式会社 | Solar cell |
| WO2016047564A1 (en) * | 2014-09-22 | 2016-03-31 | 京セラ株式会社 | Solar cell element |
| JP2016164969A (en) * | 2015-02-26 | 2016-09-08 | 京セラ株式会社 | Solar cell element and method of manufacturing the same |
| JP2017045907A (en) * | 2015-08-28 | 2017-03-02 | 京セラ株式会社 | Solar cell element and manufacturing method therefor |
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| WO2018173125A1 (en) | 2018-09-27 |
| TWI668880B (en) | 2019-08-11 |
| JPWO2018173125A1 (en) | 2019-06-27 |
| TW201836164A (en) | 2018-10-01 |
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