CN110417357B - Compact integrated doherty amplifier - Google Patents
Compact integrated doherty amplifier Download PDFInfo
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- CN110417357B CN110417357B CN201810385233.6A CN201810385233A CN110417357B CN 110417357 B CN110417357 B CN 110417357B CN 201810385233 A CN201810385233 A CN 201810385233A CN 110417357 B CN110417357 B CN 110417357B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0288—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/391—Indexing scheme relating to amplifiers the output circuit of an amplifying stage comprising an LC-network
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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Abstract
The invention discloses a compact integrated doherty amplifier, comprising: the output node of the main amplifier is connected with the output node of the auxiliary amplifier through a high-resistance conversion line, the high-resistance conversion line is also connected with a parasitic parameter balancing network, and the output node of the auxiliary amplifier is used as output. The matching element of the doherty circuit can be reduced to a great extent, the area is saved, the integration is easy, the loss of the whole circuit can be reduced, and the performance of the doherty circuit is improved.
Description
Technical Field
The present invention relates to an integrated doherty amplifier, and in particular to a compact integrated doherty amplifier.
Background
The power amplifier is one of the important core modules of the radio frequency front end in the wireless communication system, and has a crucial influence on the overall performance of the communication system. With the development of wireless communication, the system has an increasing demand for rapid data transmission, which requires a more complex modulation mode, and further requires a higher peak-to-average ratio of the communication signal, so that a higher requirement is put on the linearity of the power amplifier. In practical application, a power backoff method is generally adopted to meet the requirement of linearity, but the efficiency is greatly sacrificed, so that the operation cost of wireless communication is increased, and the instability of the system is also deteriorated due to the problems of heat dissipation and the like. Therefore, under the condition of meeting the required linearity, how to improve the efficiency of the power amplifier becomes the key point of the current power amplifier research and development. In addition, along with the increase of the number of the power amplifiers, the integration level also provides higher requirements for miniaturization of the power amplifiers,
the Doherty (Doherty) amplifier technology has the advantages of simple structure, easy realization, and particularly high level of efficiency under the power back-off condition, and can be well balanced in efficiency and linearity. But at the cost of: the development of doherty amplifiers requires very accurate design. The electrical parameters of the components contained in the doherty amplifier, such as the ceramic capacitors and their location on the Printed Circuit Board (PCB), must be precisely defined with much smaller tolerances than those required for conventional power amplifiers. Furthermore, due to mechanical tolerances, the ground contacts of the main and peak stage packages and their positions between the input and output microchips of the PCB cannot be reproduced with sufficient accuracy and phase inconsistencies between the two amplifying branches are increased. Thereby, the accuracy of the doherty amplifier parameter value is adversely affected, which results in low production yield.
In order to guarantee the performance of the doherty circuit, certain requirements exist for the circuit: accurate input power control, output power traction, and control of the amplitude and phase of the input signals provided to the main and peak stages.
The traditional Doherty amplifier has large circuit area, is not easy to integrate and has large loss due to more elements participating in matching. The doherty amplifier architecture as shown in fig. 1 has the following disadvantages:
1. the impedance compensation network is not needed, so that the impedance compensation circuit can only be used under the condition that the impedance meets a certain condition, and the application range of the impedance compensation circuit is greatly reduced.
2. The independent inductor is large in area and relatively poor in consistency.
3. The input does not have a phase fitting network, and the Doherty synthesis effect is affected. Which can cause degradation of the AMAM curve over a certain bandwidth.
Disclosure of Invention
In view of the above technical problems, an object of the present invention is to provide a compact integrated doherty amplifier capable of greatly reducing the matching elements of the doherty circuit, saving the area, facilitating the integration, reducing the loss of the whole circuit, and improving the performance of the doherty circuit.
In order to solve the problems in the prior art, the technical scheme provided by the invention is as follows:
a compact integrated doherty amplifier comprising:
the output node of the main amplifier is connected with the output node of the auxiliary amplifier through a high-resistance conversion line, the high-resistance conversion line is also connected with a parasitic parameter balancing network, and the output node of the auxiliary amplifier is used as output.
In a preferred technical solution, the parasitic parameter balancing network includes a balancing inductance and a ground balancing capacitance connected in series with the balancing inductance.
In a preferred technical scheme, the high-resistance transformation line comprises two inductors connected in series, and the parasitic parameter balancing network is connected to a connecting node of the two inductors.
In a preferred technical solution, the input is located on a first substrate, the main amplifier, the high-resistance transformation line, and the auxiliary amplifier are integrated on a second substrate, and the parasitic parameter balancing network and the output impedance transformation line are located on a third substrate.
In a preferred embodiment, the input, main amplifier, high-resistance transforming line, auxiliary amplifier, parasitic parameter balancing network, and output impedance transforming line are integrated on the same active substrate.
In a preferred embodiment, the output node of the auxiliary amplifier is connected to an output impedance transformer (AIT) and then used as an output.
Compared with the scheme in the prior art, the invention has the advantages that:
1. the main amplifier and the auxiliary amplifier are directly connected by adopting a high-resistance transformation line (HIL) and absorb transistor parasitic parameters together through a parasitic parameter balance network, so that the matching elements of the Doherty circuit can be reduced to a great extent, the area is saved, the integration is easy, the loss of the whole circuit can be reduced, and the performance of the Doherty circuit is improved.
2. The doherty amplifier can be provided with a Phase Matching Network (PMN) at the input to fit the phase curve of the output, so that the characteristics of the combined AMAM are improved, and the doherty amplifier is suitable for broadband application.
Drawings
The invention is further described below with reference to the accompanying drawings and examples:
fig. 1 is a circuit configuration diagram of a conventional doherty amplifier;
fig. 2 is a schematic block diagram of a doherty amplifier according to a preferred embodiment of the invention;
fig. 3 is a functional block diagram of a doherty amplifier according to another embodiment of the invention;
fig. 4 is a design example of the doherty amplifier of the invention;
fig. 5 is a schematic block diagram of another doherty amplifier of the invention;
fig. 6 is another design example of the doherty amplifier of the present invention.
Detailed Description
The above-described aspects are further described below in conjunction with specific embodiments. It should be understood that these examples are illustrative of the present invention and are not intended to limit the scope of the present invention. The implementation conditions used in the examples may be further adjusted according to the conditions of the specific manufacturer, and the implementation conditions not specified are generally those in routine experiments.
Example 1:
as shown in fig. 2, a compact integrated doherty amplifier comprising: the input (RF in), the output (RF out), the main amplifier M, and the auxiliary amplifier P may be extended to a plurality of auxiliary amplifiers, and the principle is the same, and only one auxiliary amplifier is specifically described herein, the output node of the main amplifier M is connected to the output node of the auxiliary amplifier P through a high-resistance transformation line (high-resistance delay line) HIL, the high-resistance transformation line is further connected to the parasitic parameter balancing network 100, for example, the intermediate tap Tc of the high-resistance transformation line may be connected to the parasitic parameter balancing network 100, and the output node of the auxiliary amplifier P is connected to the output impedance transformation line AIT as the output (RF out).
The parasitic parameter balancing network 100 includes a balancing inductance and a ground balancing capacitance in series with the balancing inductance. The middle tap Tc of the high-resistance conversion line is connected with the balance inductance Lb of the parasitic parameter balance network 100, and the other end of the balance inductance Lb and the balance capacitance Cb grounded form a series circuit.
The balance inductance Lb in the parasitic parameter balance network may be implemented by using a bonding wire inductance, or may be implemented by using a planar inductance or a distributed high-resistance wire instead, which is not limited herein.
The high-resistance switching line (high-resistance delay line) HIL connecting the main amplifier M and the auxiliary amplifier P may be implemented by two series inductances Ls1 and Ls2, and as shown in fig. 3, the connection node of the inductances Ls1 and Ls2 is taken as the intermediate tap Tc.
The output node of the auxiliary amplifier P is connected to the output impedance transformation line AIT and outputs the output impedance transformation line AIT. The characteristic impedance of the impedance converter can be selected according to the principle of symmetry of a main circuit and an auxiliary circuit, and can also be selected according to the principle of asymmetry of the main circuit and the auxiliary circuit. The output impedance transformation line AIT is used to transform the doherty combined impedance to a certain value, for example, 50Ohm.
The high-resistance conversion line HIL and Lb and Cb of the parasitic parameter balance network and parasitic parameters of the main amplifier and the auxiliary amplifier form a Doherty phase inverter circuit together, and the high-resistance traction function in the Doherty circuit is achieved. The principle of high resistance traction is according to the following formula:
n is the coefficient, ropt is the impedance at which the transistor will perform optimally,X L is the load reactance. To obtain high efficiency while simultaneously compromising bandwidth and linearity, a suitable value of m is selected, e.g. 2<m<4. Thereby obtaining n andX L is a value of (2). Based on the sum of nX L The values of the impedance and phase of the high-resistance transformation line HIL, the inductance Lb and the capacitance Cb in the parasitic parameter balancing network are calculated from the values of the parasitic parameters of the main amplifier and the auxiliary amplifier.
The input (RF in) is connected with the power distribution unit PD, and two output ends of the power distribution unit PD are respectively connected with input ends of the main-way input matching network IMM and the auxiliary-way input matching network IMP, so that power is distributed to two branches of the main way and the auxiliary way. The output end of the main input matching network IMM is connected with the main transistor M to form impedance matching. The output end of the auxiliary input matching network IMP is connected with the input end of the phase balancing network PBN to form impedance matching, and the output end of the phase balancing network PBN is connected with the input end of the auxiliary transistor to form impedance matching, so that balanced phase shifting is realized.
As shown in fig. 4, the input passive integrated device (IPD 1) and the output passive integrated device (IPD 2) are integrated on a low cost substrate such as GaAs, high resistance silicon, PCB, ceramic wafer, etc. The main amplifier, the high-resistance conversion line, and the auxiliary amplifier are integrated on an active substrate, such as GaN, gaAs, LDMOS, to form a monolithic integrated circuit (MMIC).
The integrated passive devices (IPD 1, IPD 2) are mounted together with monolithic integrated circuits (MMICs) on a heat sink Flange (Flange). The input end is connected with the outside through a bonding wire BW1, and the output end is connected with the outside through a bonding wire BW 4. The input passive integrated circuit IPD1 is connected to the monolithic integrated circuit MMIC by bond wires BW2 and the output passive integrated circuit IPD2 is connected to the monolithic integrated circuit MMIC by BW3 and BW 5.
Example 2:
as shown in fig. 5 and 6, all circuits including the input, main amplifier, high-resistance conversion line, auxiliary amplifier, parasitic parameter balancing network, and output circuits are integrated on the same active substrate, such as GaN, gaAs, LDMOS, to form a monolithic integrated circuit (MMIC). MMIC is mounted on the flange, the input end is connected with the outside through bonding wire BW1, and the output end is connected with the outside through bonding wire BW 2.
The architecture of the present invention may be assembled in an i-Module format. Conventional packaging forms such as ceramics, OMP, cavity plastics, etc. may also be used.
It is to be understood that the above-described embodiments of the present invention are merely illustrative of or explanation of the principles of the present invention and are in no way limiting of the invention. Accordingly, any modification, equivalent replacement, improvement, etc. made without departing from the spirit and scope of the present invention should be included in the scope of the present invention. Furthermore, the appended claims are intended to cover all such changes and modifications that fall within the scope and boundary of the appended claims, or equivalents of such scope and boundary.
Claims (5)
1. A compact integrated doherty amplifier comprising:
the input/output circuit comprises an input/output circuit, a main amplifier and at least one auxiliary amplifier, and is characterized in that an output node of the main amplifier is connected with an output node of the auxiliary amplifier through a high-resistance conversion line, the high-resistance conversion line is also connected with a parasitic parameter balancing network, and the output node of the auxiliary amplifier is used as output;
the parasitic parameter balancing network comprises a balancing inductance and a grounding strap Heng Dianrong connected in series with the balancing inductance;
the middle tap of the high-resistance conversion line is connected with a balance inductor of the parasitic parameter balance network, and the other end of the balance inductor and a grounded balance capacitor form a series circuit; the high-resistance conversion line and the parasitic parameter balance network absorb parasitic parameters of the transistor together;
the high-resistance conversion line and parasitic parameters of the main amplifier and the auxiliary amplifier together form an inverter circuit of the doherty amplifier.
2. The compact integrated doherty amplifier of claim 1 wherein the high resistance conversion line comprises two series connected inductors and the parasitic parameter balancing network is connected to the connection nodes of the two inductors.
3. The compact integrated doherty amplifier of any one of claims 1-2, wherein the input is on a first substrate, the main amplifier, high-resistance conversion line, and auxiliary amplifier are integrated on a second substrate, and the parasitic parameter balancing network and output are on a third substrate.
4. The compact integrated doherty amplifier of any one of claims 1-2, wherein the input, main amplifier, high-impedance transformation line, and auxiliary amplifier, parasitic parameter balancing network, and output are integrated on the same active substrate.
5. The compact integrated doherty amplifier of claim 1 wherein the output node of the auxiliary amplifier is connected to an impedance transformer as an output.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810385233.6A CN110417357B (en) | 2018-04-26 | 2018-04-26 | Compact integrated doherty amplifier |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810385233.6A CN110417357B (en) | 2018-04-26 | 2018-04-26 | Compact integrated doherty amplifier |
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| CN110417357A CN110417357A (en) | 2019-11-05 |
| CN110417357B true CN110417357B (en) | 2023-06-27 |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111510077A (en) * | 2020-04-24 | 2020-08-07 | 苏州远创达科技有限公司 | Broadband Doherty amplifier |
| CN117595810A (en) * | 2022-08-18 | 2024-02-23 | 恩智浦美国有限公司 | Doherty amplifier |
Citations (8)
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| JP2005303771A (en) * | 2004-04-14 | 2005-10-27 | Mitsubishi Electric Corp | High frequency power amplifier |
| CN102113207A (en) * | 2008-07-09 | 2011-06-29 | 意法爱立信有限公司 | Doherty amplifier with input network optimized for MMIC |
| CN102414985A (en) * | 2009-04-30 | 2012-04-11 | 飞思卡尔半导体公司 | Wireless communication device and semiconductor package device having a power amplifier therefor |
| CN102480272A (en) * | 2010-11-29 | 2012-05-30 | Nxp股份有限公司 | Radiofrequency amplifier |
| CN103023448A (en) * | 2011-09-27 | 2013-04-03 | 英飞凌科技股份有限公司 | RF device with compensatory resonator matching topology |
| CN105048970A (en) * | 2014-04-15 | 2015-11-11 | 恩智浦有限公司 | Ultra wideband doherty amplifier |
| CN105874706A (en) * | 2014-01-06 | 2016-08-17 | 华为技术有限公司 | Doherty power amplifier, communication device and system |
| CN107332518A (en) * | 2017-06-28 | 2017-11-07 | 苏州远创达科技有限公司 | A kind of broadband Doherty power amplifier |
-
2018
- 2018-04-26 CN CN201810385233.6A patent/CN110417357B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005303771A (en) * | 2004-04-14 | 2005-10-27 | Mitsubishi Electric Corp | High frequency power amplifier |
| CN102113207A (en) * | 2008-07-09 | 2011-06-29 | 意法爱立信有限公司 | Doherty amplifier with input network optimized for MMIC |
| CN102414985A (en) * | 2009-04-30 | 2012-04-11 | 飞思卡尔半导体公司 | Wireless communication device and semiconductor package device having a power amplifier therefor |
| CN102480272A (en) * | 2010-11-29 | 2012-05-30 | Nxp股份有限公司 | Radiofrequency amplifier |
| CN103023448A (en) * | 2011-09-27 | 2013-04-03 | 英飞凌科技股份有限公司 | RF device with compensatory resonator matching topology |
| CN105874706A (en) * | 2014-01-06 | 2016-08-17 | 华为技术有限公司 | Doherty power amplifier, communication device and system |
| CN105048970A (en) * | 2014-04-15 | 2015-11-11 | 恩智浦有限公司 | Ultra wideband doherty amplifier |
| CN107332518A (en) * | 2017-06-28 | 2017-11-07 | 苏州远创达科技有限公司 | A kind of broadband Doherty power amplifier |
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| CN110417357A (en) | 2019-11-05 |
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