CN110416401A - A kind of pressure sensor and production method - Google Patents
A kind of pressure sensor and production method Download PDFInfo
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- CN110416401A CN110416401A CN201910702298.3A CN201910702298A CN110416401A CN 110416401 A CN110416401 A CN 110416401A CN 201910702298 A CN201910702298 A CN 201910702298A CN 110416401 A CN110416401 A CN 110416401A
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/16—Measuring force or stress, in general using properties of piezoelectric devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/857—Macromolecular compositions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
- H10N30/877—Conductive materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/88—Mounts; Supports; Enclosures; Casings
Abstract
The present invention provides a kind of pressure sensor and production method, pressure sensor include: lower protective layer, on lower protective layer in the lower electrod-array of planar periodic arrangement, piezoelectric layer, on piezoelectric layer in the top electrode array of planar periodic distribution, up-protective layer；The lead of top electrode array and the lead of lower electrod-array are respectively set at the edge of the up-protective layer and the lower protective layer, for connecting external measuring circuitry.Using piezoelectric material as signal generating source, electric signal is generated by piezoelectric effect in stress, signal is analyzed and handled by signal detection and processing unit, realizes self-powered work.And sensor structure is simple, high sensitivity, with certain flexibility, has important application value in fields such as human-computer interaction, touch screen field, flexible electronic devices.
Description
Technical field
The present invention relates to sensor technical field more particularly to a kind of pressure sensor and production methods.
Background technique
As a kind of human-computer interaction interface, it can make people easily pass information to machine to go to realize phase touch screen
Corresponding function, this greatly facilitates daily life.But traditional touch screen is only capable of providing the identification of position of touch,
The identification that can only realize plan-position, can not expand to third dimension, i.e., identify that this is to a certain degree to touch-control power
On limit the user experience of people, so pressure development touch sensing has great importance.On the other hand, in these years
Flexible wearable electronic product obtains development at full speed, and requirement of the development of flexible screen, Folding screen to touch sensing is increasingly
It is high.In order to not influence the display of display screen, touch sensing will have high light transmittance, low mist degree；To adapt to screen shape
Change, it is necessary to touch sensing have certain flexibility；In order to realize the identification of third dimension, it is necessary to touch-control sensing
Device can identify touch-control power size.
Summary of the invention
The present invention is in order to solve the pressure sensor of touch screen in the prior art in terms of light transmittance, mist degree and flexibility not
The problem of meet demand, provides a kind of pressure sensor and production method.
To solve the above-mentioned problems, the technical solution adopted by the present invention is as described below:
A kind of pressure sensor, comprising: lower protective layer, the lower electrode in planar periodic arrangement on lower protective layer
Array, piezoelectric layer, top electrode array, the up-protective layer being distributed on piezoelectric layer in planar periodic；In the up-protective layer
The lead of top electrode array and the lead of lower electrod-array are respectively set with the edge of the lower protective layer, for connecting external survey
Measure circuit.
Preferably, the up-protective layer and the lower protective layer are transparent polymer material.
Preferably, the material of the top electrode array and the lower electrod-array is transparent conductive material preparation.
Preferably, the piezoelectric layer is prepared by transparent piezoelectric high molecular material.
The present invention also provides a kind of production methods of pressure sensor, include the following steps: S1: lower protective layer is prepared, under
Protective layer thickness range is 0.1~1000 μm；S2: electrod-array and trace layer under being prepared on the lower protective layer, thickness
Range is 0.1~10 μm；S3: preparing piezoelectric layer on the lower electrod-array, and piezoelectric layer thickness range is 1~1000 μm；S4:
Top electrode array and trace layer are prepared on the piezoelectric layer, thickness range is 0.1~10 μm；S5: in the top electrode battle array
Up-protective layer is prepared on column, up-protective layer thickness range is 0.1~1000 μm；S6: in the top electrode array and the lower electricity
Pad is made on the array leads of pole obtains sensor for connecting external circuit；S7: by the lower electrode array of the sensor
The pad ground connection of column, the pad of the top electrode array connect high pressure and are polarised under high voltage electric field；The high voltage electric field
Field strength range be 100~500MV/m, 1~30min of polarization time.
Preferably, using the up-protective layer, the lower electrod-array, the top electrode array or the piezoelectric layer as substrate
Carry out film layer preparation, hot pressing or bonding between each layer.
Preferably, the pixel of the top electrode array is arranged by row or column, the picture of the corresponding lower electrod-array
Vegetarian refreshments is arranged by column or row；One column of pixel described in a row or column of the top electrode array and the lower electrod-array or
One-row pixels point shares a lead.
Preferably, the top electrode array and the lower electrod-array correspond to each other, the top electrode array and it is described under
The pattern that electrod-array is formed includes but is not limited to rectangle, circle, diamond shape, triangle.
Preferably, pixel point areas≤1cm of the top electrode array and the lower electrod-array2, lead line width 20~
10000 μm, 20~10000 μm of line-spacing.
Preferably, the top electrode array, the lower electrod-array, the piezoelectric layer pass through successively building or template meal system
Make.
The invention has the benefit that a kind of pressure sensor and production method are provided, using piezoelectric material as signal
Occurring source generates electric signal by piezoelectric effect in stress, by signal detection and processing unit to signal carry out analysis and
Processing realizes self-powered work.And sensor structure is simple, high sensitivity, with certain flexibility, human-computer interaction,
The fields such as touch screen field, flexible electronic devices have important application value.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of pressure sensor in the embodiment of the present invention.
Fig. 2 is the schematic diagram of manufacturing method of pressure sensor in the embodiment of the present invention.
Fig. 3 is lower electrod-array floor map in the embodiment of the present invention.
Fig. 4 is top electrode array plane schematic diagram in the embodiment of the present invention.
Fig. 5 is sensor array floor map in the embodiment of the present invention.
Wherein, 1- lower protective layer, electrod-array under 2-, 3- piezoelectric layer, 4- top electrode array, 5- up-protective layer.
Specific embodiment
In order to which technical problem to be solved of the embodiment of the present invention, technical solution and beneficial effect is more clearly understood,
The present invention is further described in detail below with reference to the accompanying drawings and embodiments.It should be appreciated that specific implementation described herein
Example is only used to explain the present invention, is not intended to limit the present invention.
It should be noted that it can be directly another when element is referred to as " being fixed on " or " being set to " another element
On one element or indirectly on another element.When an element is known as " being connected to " another element, it can
To be directly to another element or be indirectly connected on another element.In addition, connection can be for fixing
Effect is also possible to act on for circuit communication.
It is to be appreciated that term " length ", " width ", "upper", "lower", "front", "rear", "left", "right", "vertical",
The orientation or positional relationship of the instructions such as "horizontal", "top", "bottom" "inner", "outside" is that orientation based on the figure or position are closed
System is merely for convenience of the description embodiment of the present invention and simplifies description, rather than the device or element of indication or suggestion meaning must
There must be specific orientation, be constructed and operated in a specific orientation, therefore be not considered as limiting the invention.
In addition, term " first ", " second " are used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance
Or implicitly indicate the quantity of indicated technical characteristic.Define " first " as a result, the feature of " second " can be expressed or
Implicitly include one or more this feature.In the description of the embodiment of the present invention, the meaning of " plurality " is two or two
More than, unless otherwise specifically defined.
Embodiment 1
As shown in Figure 1, the present invention provides a kind of pressure sensor, comprising: lower protective layer 1 is on lower protective layer 1
The lower electrod-array 2 of planar periodic arrangement, piezoelectric layer 3, the top electrode array being distributed on piezoelectric layer 3 in planar periodic
4, up-protective layer 5；The lead of top electrode array 4 is respectively set under at the edge of the up-protective layer 5 and the lower protective layer 1
The lead of electrod-array 2, for connecting external measuring circuitry.
Up-protective layer 1 and lower protective layer 5 are transparent polymer material, and transparent polymer material is poly terephthalic acid second two
Ester, polymethyl methacrylate, dimethyl silicone polymer, polyurethane, polyvinyl alcohol, polyethylene, polyvinyl butyral, poly- carbon
Acid esters, polypropylene, acrylonitrile-butadiene-styrene (ABS), polystyrene, polyvinyl chloride, nylon or any at least two are formed mixed
Close object or composite membrane.
The material of top electrode array 2 and lower electrod-array 4 is transparent conductive oxide, nano-silver thread, nano-Ag particles, receives
Rice silver strip, graphene, carbon nanotube, the nano material or aforementioned any at least two shape of transition metal carbide or carbonitride
At mixture made of transparent conductive film.
The material of piezoelectric layer 3 is that Kynoar, poly- trifluoro-ethylene, polyvinylidene fluoride copolymer, fluorinated ethylene propylene are total
The transparent polymer of polymers, the blend of Kynoar-hexafluoropropene or previous materials or corresponding monomer copolymer.
In the present invention, piezoelectric layer 3 can be film made of the material with piezoelectric property, can also be to transparent porous material
Material carries out the electret of electric field polarization formation.Sensor array uses ranks cross modal, each ranks infall is one
A sensing unit, while a lead connects the pixel of a row (column), addressing mode uses ranks addressing mode, by successively
Scanning do not go together, different lines come determine the point of application position and force size.By controlling the pixel in per square inch
Highly sensitive sensing measurement may be implemented in number.It can by the transparent polymer material and adjustment material thickness of choosing different
So that sensor has different physical properties, such as mechanical performance, tensility energy, the coating performance with extraordinary screen.
Embodiment 2
As shown in Fig. 2, the present invention provides a kind of production method of pressure sensor, include the following steps:
S1: preparing lower protective layer, and lower protective layer thickness range is 0.1~1000 μm；
S2: electrod-array and trace layer under preparing on the lower protective layer, thickness range are 0.1~10 μm；
S3: preparing piezoelectric layer on the lower electrod-array, and piezoelectric layer thickness range is 1~1000 μm；
S4: preparing top electrode array and trace layer on the piezoelectric layer, and thickness range is 0.1~10 μm；
S5: preparing up-protective layer on the top electrode array, and up-protective layer thickness range is 0.1~1000 μm；
S6: pad is made on the top electrode array and the lower electrod-array lead and is obtained for connecting external circuit
Sensor；
S7: the pad of the pad ground connection of the lower electrod-array of the sensor, the top electrode array is connect into high pressure
It is polarised under high voltage electric field；The field strength range of the high voltage electric field be 100~500MV/m, the polarization time 1~
30min。
In an embodiment of the present invention, using up-protective layer, lower electrod-array, top electrode array or piezoelectric layer as substrate
Carry out film layer preparation, hot pressing or bonding between each layer；
In another embodiment of the invention, the pixel of top electrode array is arranged by row or column, corresponding lower electricity
The pixel of pole array is arranged by column or row；One column of a row or column pixel of top electrode array and the lower electrod-array
Or one-row pixels point shares a lead.Top electrode array and lower electrod-array correspond to each other, top electrode array and lower electrode array
The pattern that column are formed includes but is not limited to rectangle, circle, diamond shape, triangle.The pixel of top electrode array and lower electrod-array
Area≤1cm2, 20~10000 μm of lead line width, 20~10000 μm of line-spacing.
Upper lower protective layer, piezoelectric layer production method include but is not limited to spin coating, blade coating, spraying, cast coating method, slit
Formula coating, micro gravure coating, comma roller coating, injection moulding, extrusion moulding, silk-screen printing, ink jet printing, adagio print
Brush, intaglio printing do not release printing, trans-printing, jet-impingement or nano impression etc..
The production method of upper and lower electrod-array and conductor layer includes successively constructing and template two ways.Wherein successively
The mode of building include upper and lower electrod-array preparation and upper and lower electrod-array and lead it is graphical, template includes preparation
Exposure mask, etch mask and depositing electrode array and three step of lead.
Electrod-array and trace layer are prepared by the way of successively constructing, comprising:
The preparation of first step upper/lower electrode array includes but is not limited to spin coating, blade coating, spraying, cast coating method, slit
Coating, micro gravure coating, comma roller coating, silk-screen printing, ink jet printing, adagio printing, intaglio printing, not in contact with printing,
The modes such as trans-printing, jet-impingement, nano impression, sputtering, vapor deposition, ion plating；
The patterned mode of second step includes but is not limited to laser ablation, ion etching, ise, high pressure plasma quarter
Erosion, high-density plasma etching, reactive ion etching etc..
Electrod-array and trace layer are prepared using template, comprising:
The first step prepare exposure mask mode include but is not limited to spin coating, blade coating, spraying, cast coating method, slit coating,
Micro gravure coating, comma roller coating, injection moulding, extrusion moulding, silk-screen printing, ink jet printing, adagio printing, intaglio plate
Printing, the film layer obtained not in contact with means such as printing, trans-printing, jet-impingement, nano impressions further include directly acquiring business
Finished film；The material of exposure mask includes but is not limited to the photoresist, silicon, quartz, polyethylene terephthalate, poly- first of various models
Base methyl acrylate, polyurethane, polyvinyl alcohol, polyethylene, polyvinyl butyral, polycarbonate, gathers dimethyl silicone polymer
Propylene etc.；The lithographic method of exposure mask includes but is not limited to chemically react etching, ise, plasma etching, high pressure plasma
Etching, high-density plasma etching, reactive ion etching, laser ablation etc.；The mode of depositing electrode array and lead include but
Be not limited to spin coating, blade coating, spraying, cast coating method, slit coating, micro gravure coating, comma roller coating, silk-screen printing,
Ink jet printing, adagio printing, intaglio printing, not in contact with printing, trans-printing, jet-impingement, nano impression, silk-screen printing, hole
Plate printing, ion plating, sputtering, vapor deposition etc.；The preparation method of pad includes but is not limited to sputtering, vapor deposition, plating, dispensing, silk screen
Printing, orifice plate printing, intaglio printing, thermal transfer, ink jet printing, adagio printing, not in contact with printing, jet-impingement, nano impression,
The modes such as bonding, chemical plating, welding；The material of pad includes but is not limited to the metals such as copper, tin, aluminium, indium, gold, silver and alloy, is gone back
Including but not limited to conductive silver glue, gold size, carbon paste etc..
Can by control sensor in each film layer material category and thickness come realize the different light transmittance of sensor and
Mist degree, light transmittance should be greater than being equal to 35%, and mist degree is less than or equal to 18.
Embodiment 3
Step 1: choosing smooth PET film, width 76.2cm, length is unlimited, unidirectionally to scratch along long axis direction on it
One layer of release agent, thickness are about 1 μm；
Step 2: polyvinyl butyral is being scratched on the processed substrate of step 1 as lower protective layer, solvent N,
Dinethylformamide, mass fraction 10%wt, being put into the lower protective layer thickness obtained after baking oven drying is about 0.1 μm.
Step 3: silver nanowires dispersion liquid is scratched on lower protective layer, solvent is water, solid content 1mg/L, shape after drying
At lower electrod-array, electrod-array is with a thickness of 0.1 μm.
Step 4: the lower electrod-array that step 3 is obtained carries out laser graphics, available to be distributed in planar periodic
Electrod-array and lead, as shown in figure 3, the size of each electrode pixel point be 40*40 μm, lead line width be 20 μm, line-spacing
It is 20 μm.
Step 5: Kynoar is scratched on the lower electrod-array that step 4 obtains as piezoelectric layer, solvent N, N- bis-
Methylformamide, solid content 10%wt, Kynoar is after being put into baking oven drying with a thickness of 1 μm.
Step 6: silver nanowires dispersion liquid is scratched on the polyunsymfluorethylepiezoelectric piezoelectric layer that step 5 obtains as top electrode battle array
Column, solvent are water, and solid content 1mg/L forms top electrode array after drying, electrod-array is with a thickness of 0.1 μm.
Step 7: laser graphics being carried out to the top electrode array that step 6 obtains and obtain top electrode array and lead, such as Fig. 4
Shown, the size of each electrode pixel point is 40*40 μm, and lead line width is 20 μm, and line-spacing is 20 μm.
Step 8: polyvinyl butyral is scratched above the electrod-array that step 7 obtains as up-protective layer, solvent is
N,N-Dimethylformamide, mass fraction 10%wt, being put into the up-protective layer thickness obtained after baking oven drying is about 0.1 μm.
Step 9: conductive silver paste being dripped into the terminal production pad in upper/lower electrode array leads, pad size using dispenser
It is 40 μm of 20 μ m.
Step 10: as shown in figure 5, being sensor array floor map, connecting DC high-voltage power supply and sensing with conducting wire
The pad of device, is polarised senser element, Polarization field strength 100MV/m, time 30min.By polarization, obtain
With the flexible and transparent pressure sensor of 40*40 μm of pixel array, mist degree 18 in plane.
Embodiment 4
Step 1: choosing smooth glass plate, having a size of 5 × 5cm, scratch one layer of release agent on the glass substrate, thickness is about
1 μm, it is put into baking oven drying.
Step 2: polyvinyl butyral is being scratched on the processed substrate of step 1 as lower protective layer, solvent N,
Dinethylformamide, mass fraction 10%wt, being put into the up-protective layer thickness obtained after baking oven drying is about 1000 μm.
Step 3: silver nanowires dispersion liquid is scratched on lower protective layer, solvent is water, solid content 1mg/L, shape after drying
At lower electrod-array, electrod-array is with a thickness of 5 μm.
Step 4: the lower electrod-array that step 3 is obtained carries out laser graphics, available to be distributed in planar periodic
Electrod-array and lead, as shown in figure 3, the size of each electrode pixel point be 1 × 1cm, lead line width be 10000 μm, line
Away from being 10000 μm.
Step 5: Kynoar is scratched on the lower electrod-array that step 4 obtains as piezoelectric layer, solvent N, N- bis-
Methylformamide, solid content 10%wt, Kynoar is after being put into baking oven drying with a thickness of 1000 μm.
Step 6: silver nanowires dispersion liquid is scratched on the polyunsymfluorethylepiezoelectric piezoelectric layer that step 5 obtains as top electrode battle array
Column, solvent are water, and solid content 1mg/L forms top electrode array after drying, electrod-array is with a thickness of 5 μm.
Step 7: laser graphics being carried out to the top electrode array that step 6 obtains and obtain top electrode array and lead, such as Fig. 4
Shown, the size of each electrode pixel point is 1 × 1cm, and lead line width is 500 μm, and line-spacing is 500 μm.
Step 8: polyvinyl butyral is scratched above the electrod-array that step 7 obtains as up-protective layer, solvent is
N,N-Dimethylformamide, mass fraction 10%wt, being put into the up-protective layer thickness obtained after baking oven drying is about 5 μm.
Step 9: conductive silver paste being dripped into the terminal production pad in upper/lower electrode array leads, pad size using dispenser
It is 1000 μm of 500 μ m.
Step 10: with the pad of conducting wire connection DC high-voltage power supply and senser element, senser element is polarised,
Polarization field strength is 250MV/m, time 15min.By polarization, the interior flexibility with 40*40 μm of pixel array of plane is obtained thoroughly
Bright pressure sensor, mist degree 5.
Embodiment 5
Step 1: choosing finished product polyethylene terephthalate as protective layer, having a size of 20 × 40cm, with a thickness of 1000 μ
m。
Step 2: choosing the Kapton of finished product, carried out with a thickness of 100 μm using laser having a size of 20 × 40cm
The exposure mask of graphical production upper/lower electrode, the size of each electrode pixel point are 0.5*0.5cm, and lead line width is 250 μm, line-spacing
It is 250 μm.
Step 3: the polyimide mask that step 2 obtains is sticked to the poly terephthalic acid second that step 1 prepares by adhesive tape
On diester, finally obtained by way of magnetron sputtering in polyethylene terephthalate depositing indium tin oxide with a thickness of 10 μm
Top electrode array and lower electrod-array.
Step 4: a strata vinylidene (PVDF) is scratched on the lower electrod-array that step 3 obtains as piezoelectric layer, thickness
Degree is 10 μm.
Step 5: the polyethylene terephthalate with top electrode array for being obtained step 3 by way of hot pressing with
Step 4 obtains piezoelectric layer and carries out hot pressing, and top electrode array is contacted with piezoelectric layer, and final hot pressing, which is formed, has good combination power
Senser element.
Step 6: conductive silver paste being dripped into the terminal production pad in upper/lower electrode array leads, pad size using dispenser
It is 500 μm of 250 μ m.
Step 7: with the pad of conducting wire connection DC high-voltage power supply and senser element, senser element is polarised,
Polarization field strength is 500MV/m, time 1min.By polarization, the interior flexibility with 0.5*0.5cm pixel array of plane is obtained thoroughly
Bright pressure sensor, mist degree 10.
The above content is a further detailed description of the present invention in conjunction with specific preferred embodiments, and it cannot be said that
Specific implementation of the invention is only limited to these instructions.For those skilled in the art to which the present invention belongs, it is not taking off
Under the premise of from present inventive concept, several equivalent substitute or obvious modifications can also be made, and performance or use is identical, all answered
When being considered as belonging to protection scope of the present invention.
Claims (10)
1. a kind of pressure sensor characterized by comprising lower protective layer, being arranged in planar periodic on lower protective layer
The lower electrod-array of column, piezoelectric layer, top electrode array, the up-protective layer being distributed on piezoelectric layer in planar periodic；Institute
The lead of top electrode array and the lead of lower electrod-array is respectively set in the edge for stating up-protective layer and the lower protective layer, is used for
Connect external measuring circuitry.
2. pressure sensor as described in claim 1, which is characterized in that the up-protective layer and the lower protective layer are transparent
High molecular material.
3. pressure sensor as described in claim 1, which is characterized in that the top electrode array and the lower electrod-array
Material is transparent conductive material preparation.
4. pressure sensor as described in claim 1, which is characterized in that the piezoelectric layer by transparent piezoelectric high molecular material
Preparation.
5. a kind of production method of pressure sensor, which comprises the steps of:
S1: preparing lower protective layer, and lower protective layer thickness range is 0.1~1000 μm；
S2: electrod-array and trace layer under preparing on the lower protective layer, thickness range are 0.1~10 μm；
S3: preparing piezoelectric layer on the lower electrod-array, and piezoelectric layer thickness range is 1~1000 μm；
S4: preparing top electrode array and trace layer on the piezoelectric layer, and thickness range is 0.1~10 μm；
S5: preparing up-protective layer on the top electrode array, and up-protective layer thickness range is 0.1~1000 μm；
S6: pad is made on the top electrode array and the lower electrod-array lead and is sensed for connecting external circuit
Device；
S7: the pad of the pad ground connection of the lower electrod-array of the sensor, the top electrode array is connect into high pressure in height
It is polarised under piezoelectric field；The field strength range of the high voltage electric field is 100~500MV/m, 1~30min of polarization time.
6. the production method of pressure sensor as claimed in claim 5, which is characterized in that with the up-protective layer, it is described under
Electrod-array, the top electrode array or the piezoelectric layer are that substrate carries out film layer preparation, hot pressing or bonding between each layer.
7. the production method of pressure sensor as claimed in claim 5, which is characterized in that the pixel of the top electrode array
It is arranged by row or column, the pixel of the corresponding lower electrod-array is arranged by column or row；A line of the top electrode array
Or one the column or one-row pixels point of the column pixel and the lower electrod-array share a lead.
8. the production method of pressure sensor as claimed in claim 5, which is characterized in that the top electrode array and it is described under
Electrod-array corresponds to each other, and the pattern that the top electrode array and the lower electrod-array are formed includes but is not limited to rectangle, circle
Shape, diamond shape, triangle.
9. the production method of pressure sensor as claimed in claim 5, which is characterized in that the top electrode array and it is described under
Pixel point areas≤1cm of electrod-array2, 20~10000 μm of lead line width, 20~10000 μm of line-spacing.
10. the production method of pressure sensor as claimed in claim 5, which is characterized in that the top electrode array, it is described under
Electrod-array, the piezoelectric layer pass through successively building or the production of template meal.
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Application publication date: 20191105 |