CN110412607A - TOF pixel circuit and range-measurement system with high dynamic range - Google Patents
TOF pixel circuit and range-measurement system with high dynamic range Download PDFInfo
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- CN110412607A CN110412607A CN201810404994.1A CN201810404994A CN110412607A CN 110412607 A CN110412607 A CN 110412607A CN 201810404994 A CN201810404994 A CN 201810404994A CN 110412607 A CN110412607 A CN 110412607A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/06—Systems determining position data of a target
- G01S17/08—Systems determining position data of a target for measuring distance only
- G01S17/10—Systems determining position data of a target for measuring distance only using transmission of interrupted, pulse-modulated waves
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/88—Lidar systems specially adapted for specific applications
- G01S17/89—Lidar systems specially adapted for specific applications for mapping or imaging
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/88—Lidar systems specially adapted for specific applications
- G01S17/93—Lidar systems specially adapted for specific applications for anti-collision purposes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/483—Details of pulse systems
- G01S7/486—Receivers
- G01S7/4865—Time delay measurement, e.g. time-of-flight measurement, time of arrival measurement or determining the exact position of a peak
- G01S7/4866—Time delay measurement, e.g. time-of-flight measurement, time of arrival measurement or determining the exact position of a peak by fitting a model or function to the received signal
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- Computer Networks & Wireless Communication (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
The present invention provides a kind of TOF pixel circuit with high dynamic range, and the pixel circuit includes photosensitive control unit and the first reading circuit and the second reading circuit.First reading circuit and the second reading circuit are symmetric circuit, and share the photosensitive control unit.The photosensitive control unit includes photodiode and transmission transistor.First reading circuit and the second reading circuit include reset transistor, gain control unit, signal storage control unit and the first output unit.First reading circuit and the second reading circuit respectively include global exposure transmission unit, and the global exposure transmission unit includes global exposure storage unit and the second output unit.TOF pixel circuit proposed by the present invention can realize the output mode for rolling exposure and global exposure.The range-measurement system of the present invention also provides a kind of TOF imaging sensor with high dynamic range.
Description
Technical field
The present invention relates to image sensing device more particularly to a kind of image sensings of the TOF application with high dynamic range
Device pixel circuit and range-measurement system.
Background technique
TOF (Time of Fly) is mainly used in the system for obtaining 3D rendering in image sensor apparatus.System utilizes base
Object is reached from light source by light in optical time of flight, then be reflected back time of imaging sensor to arrive to measure imageable target
The distance of image sensing device.Each pixel of imaging sensor is involved in ranging, to obtain high accuracy depth image.
With the extensive use of 3D rendering, such as AR (augmented reality), VR (virtual reality), unmanned plane, robot and number
The sensing device of the application of word camera etc., TOF pixel circuit and pixel circuit will be further developed.It may be applied not only to obtain
High-precision image is taken, can also be achieved to functions such as object identification, obstacle detections.And the depth calculation of TOF is not by target object
Surface gray scale and feature influence, and can accurately carry out very much the detection of target three-dimensional image.
Summary of the invention
The object of the invention provides a kind of TOF pixel circuit with high dynamic range, and the pixel circuit includes:
Photosensitive control unit, including photodiode and transmission transistor, the photodiode is for accumulating photoelectricity effect
The charge that should be generated is to respond incident light；The transmission transistor is two, is connected respectively to the photodiode, is used for
It is exported when exposure according to the electric charge transfer that transmission of control signals respectively generates the photodiode；
First reading circuit and the second reading circuit are connected respectively to the photosensitive control unit, and described first reads electricity
Road and the second reading circuit are symmetric circuit, and share the photosensitive control unit；First reading circuit and second is read
Circuit passes through the transmission transistor respectively and is connected to the photodiode；First reading circuit and the second reading
Circuit respectively include:
Reset transistor is connected to first voltage source, resets the floating diffusion point voltage according to reseting controling signal；
Gain control unit is connected between the reset transistor and floating diffusion point；The gain control is single
Member includes gain control transistor and capacitor, and gain control transistor one end is connected to the reset transistor and the electricity
Hold, the other end is connected to the floating diffusion point, and grid is connected to control signal；The capacitor other end is connected to specified electricity
Pressure；
Signal storage control unit, including signal storage control transistor and capacitor, for exposing the photodiode
The charge that photoelectric effect generates after light is stored；The signal storage control transistor is connected to the floating diffusion point and institute
It states between capacitor；The capacitor other end connects given voltage；
Optionally, the signal storage control transistor is two, and the first signal storage control transistor is connected to described
Between output end and second signal the storage control transistor of photosensitive control unit, the second signal storage control transistor connects
It is connected to the floating diffusion point；Described capacitor one end is connected to the first signal storage control transistor and the second signal
The tie point of storage control transistor, the other end are connected to given voltage；
Optionally, the signal storage control transistor is two, and the first signal storage control transistor is connected to described
Between the output end of photosensitive control unit and the capacitor, the capacitor other end is connected to given voltage；Second signal storage
Control transistor is connected between the output end of the photosensitive control unit and floating diffusion point；
First output unit, first output unit are connected to the floating diffusion point, for rolling exposure mode
In to the voltage signal of floating diffusion point amplification output to alignment；
Optionally, first output unit includes source following transistor and row selecting transistor, and the source electrode follows
The grid of transistor is connected to the floating diffusion point, and drain electrode is connected to second voltage
Source；Its source electrode output end is connected to alignment through the row selecting transistor；
Optionally, first reading circuit and the second reading circuit respectively further comprise global exposure transmission unit, connection
Between the source following transistor source electrode output end and alignment of first output unit, for right in global exposure mode
Signal is stored, read and is exported, and the global exposure transmission unit includes that global exposure storage unit and the second output are single
Member；
The global exposure storage unit include the first global exposure transmission control transistor, picture signal storage capacitance,
Second global exposure transmission control transistor and reset signal storage capacitance, the described first global exposure transmission control transistor connect
It is connected to the source electrode output end and the second global exposure transmission control transistor of the source following transistor of first output unit
Between；Described second global exposure transmission control transistor is connected to second output unit；Described image signal storage electricity
Appearance one end is connected to first overall situation exposure transmission control transistor and second overall situation exposes transmission control transistor
Tie point, the other end connect ground terminal；Reset signal storage capacitance one end is connected to the described second global exposure transmission control
The tie point of transistor and second output unit, the other end connect ground terminal；
Second output unit includes source following transistor and row selecting transistor, is connected to the global exposure and deposits
Between storage unit and alignment, amplify output for the signal to the global exposure storage unit；The source following transistor
Grid be connected to the output end of the global exposure storage unit, drain electrode is connected to tertiary voltage source；Its source electrode output end
Alignment is connected to through the row selecting transistor；
The first voltage source and the second voltage source are variable voltage source.Capacitor in TOF pixel circuit can be node
Parasitic capacitance, Poly capacitor, MIM (metal isolator metal) capacitor, MOM (metal oxide metal) capacitor or
Mos capacitance.
The present invention also provides the range-measurement system of TOF a kind of, the range-measurement system includes:
TOF imaging sensor, the TOF imaging sensor include the support mixing that foregoing invention content of the present invention is proposed
The TOF pixel circuit array with high dynamic range of exposure；
Signal processing unit is controlled, for the control system course of work and handles the TOF pixel for supporting mixed exposure
The image data that array circuit obtains；
Modulated light source for generating modulated optical signal after receiving modulated signal, and the modulated signal received is fed back
To the TOF pixel array circuit for supporting mixed exposure；
The TOF imaging sensor includes signal phase locking module, is used for modulated signal and modulated light
The signal of source feedback carries out phase adjustment and locking.
TOF pixel circuit provided by the invention supports two kinds of read modes of rolling exposure and global exposure, can be according to application
Different output modes is selected, the image with high dynamic range (HDR) can be exported.
Different type TOF pixel circuit design proposed by the present invention, can be effectively by signal storage control unit circuit
It is isolated with other circuits, reduces the leakage current in circuit, and equivalent capacity is small, circuit operation speeds also can be faster.
TOF pixel circuit proposed by the present invention and range-measurement system can accurately measure imageable target to figure
As the distance of sensing device, it is applied to obtain high-precision image, can also be achieved to functions such as object identification, obstacle detections.
Detailed description of the invention
Fig. 1 is the TOF image element circuit structure figure of embodiment one proposed by the present invention；
Fig. 2 is the pixel circuit timing diagram of the rolling exposure mode of embodiment one proposed by the present invention；
Fig. 3 is the pixel circuit timing diagram of the global exposure mode of embodiment one proposed by the present invention；
Fig. 4 is the TOF image element circuit structure figure of embodiment two proposed by the present invention；
Fig. 5 is the pixel circuit timing diagram of the rolling exposure mode of embodiment two proposed by the present invention；
Fig. 6 is the pixel circuit timing diagram of the global exposure mode of embodiment two proposed by the present invention；
Fig. 7 is the TOF image element circuit structure figure of embodiment three proposed by the present invention；
Fig. 8 is the pixel circuit timing diagram of the rolling exposure mode of embodiment three proposed by the present invention；
Fig. 9 is the pixel circuit timing diagram of the global exposure mode of embodiment three proposed by the present invention；And
Figure 10 is a kind of range-measurement system fundamental block diagram proposed by the present invention.
Specific embodiment
Below in conjunction with each attached drawing provided by the invention, each embodiment content proposed by the present invention is described in detail.
Fig. 1 is the structure chart for the TOF pixel circuit with high dynamic range that the embodiment of the present invention one proposes.
In the present embodiment, the photosensitive control unit of TOF pixel circuit include photodiode PD and transmission transistor TXa and
TXb.TXa and TXb shares a photodiode PD.First reading circuit is connected to two pole of photoelectricity by transmission transistor TXa
Pipe PD, the second reading circuit are connected to photodiode PD by transmission transistor TXb.
First reading circuit and the mutually symmetrical circuit of the second reading circuit.First reading circuit and the second reading circuit difference
Including reset transistor, gain control unit, signal storage control unit and the first output unit.It is with the first reading circuit
Example:
Signal storage control unit is using a signal storage control transistor INTa and capacitor Cina.Signal storage control
Transistor INTa is connected between floating diffusion point fda and capacitor Cina.Another termination given voltage Vrm of capacitor Cina.
Reset transistor RSTa is connected to variable voltage source Vrab, resets floating diffusion point according to reseting controling signal rst
The voltage of fda point.The one end gain control transistor DCGa is connected to reset transistor RSTa and capacitor Cdcga, and one end is connected to
Floating diffusion point fda, grid are connected to control signal dcg.The other end of capacitor Cdcga is connected to given voltage, this refers to
Constant voltage can be pixvdd, can be with ground terminal or other given voltage values.The grid of source following transistor SFa is connected to floating
Dynamic diffusion point fda, drain electrode are connected to variable voltage source Vrsf.The source electrode output of source following transistor SFa is exposed by rolling
Light row selecting transistor RS_Sa is connected to output alignment pixa.
Overall situation exposure transmission unit includes the first global exposure transmission control transistor GSSGa, picture signal storage capacitance
Csiga, the second global exposure transmission control transistor GRSTa, reset signal storage capacitance Crsta.Second output unit includes
Pole follows transistor GSFa and row selecting transistor GS_Sa.
Second reading circuit structure and the first reading circuit symmetrical configuration, corresponding device and connection relationship also one in circuit
It causes, omits the description of the structure and connection relationship of the second reading circuit herein.
Fig. 2 gives the TOF pixel circuit timing diagram with high dynamic range for rolling exposure mode, provides in conjunction with Fig. 1
TOF pixel circuit, the embodiment of the present invention one the specific implementation process is as follows:
Roll exposure mode:
A. circuit is initialized first, signal is respectively controlled in circuit as shown in a process in Fig. 2；
Exposure process:
B. light source pulse is opened, PD is exposed, according to control signal gs_txa and gs_txb, transmission transistor TXa
It is connected with TXb, successively alternate conduction, the charge for accumulating photodiode PD are transferred to capacitor with π phase difference by TXa and TXb
Cina and Cinb；When end exposure control signal int be set to low level, by the charge that photodiode PD accumulates store respectively to
Capacitor Cina and Cinb；
Reading process:
C. row selecting transistor RS_Sa and RS_Sb conducting, control signal rst and dcg are set to high level, transistor RSTa,
RSTb, DCGa, DCGb conducting, floating diffusion point fda and fdb are reset to voltage Vrab；
The initial signal voltage of first reading circuit and the output of the second reading circuit when d. reading low conversion gain LCG respectively
VaL0 and VbL0；
E. control signal rst is set to high level, resets again to floating diffusion point fda and fdb；
F. control signal dcg is set to low level, the first reading circuit and the second reading circuit when reading high-conversion-gain HCG
The initial signal voltage Vah0 and Vbh0 of output；
G. control signal int is set to high level, and transistor INTa and INTb are connected, the electricity stored in capacitor Cina and Cinb
Lotus is transferred to floating diffusion point fda and fdb respectively；
H. control signal int is set to low level, the first reading circuit and the second reading circuit when reading high-conversion-gain HCG
The signal voltage Vah1 and Vbh1 of output；
I. control signal int and dcg is set to high level, and Partial charge is transferred to capacitor Cdcga and Cdcgb；
J. control signal int is set to low level, and the first reading circuit and the second reading circuit are defeated when reading low conversion gain
Signal voltage VaL1 and VbL1 out.
Are carried out by related operation, obtains VaL by VaL1 and VaL0, Vah1 and Vah0, VbL1 and VbL0, Vbh1 and Vbh0 respectively
=VaL1-VaL0, Vah=Vah1-Vah0, VbL=VbL1-VbL0, Vbh=Vbh1-Vbh0.Different gains (high-conversion-gain/
Low conversion gain) under two frame signals can synthesize HDR signal, Va=f (Vah, VaL), Vb=f (Vbh, VbL).
If signal source pulse width is T, the time that light source flies in the sky is Ttof=T*Vb/ (Va+Vb), therefore object
Distance d=Ttof/2*C=1/2*C*T*Vb/ (Va+Vb) of the body away from pixel array, wherein C is the propagation speed of light in a vacuum
Degree.
In timing shown in Fig. 2, the dash area of control signal gs_txa and gs_txb indicate effective charge accumulation
Time domain.
Global exposure mode:
In conjunction with the circuit sequence for the global exposure mode that the pixel circuit and Fig. 3 of Fig. 1 provide, have to the embodiment of the present invention one
There is the implementation of the global exposure mode of the TOF pixel circuit of high dynamic range to be described in detail.Pixel circuit height is dynamic
The realization of state range is respectively to read a frame image under high-conversion-gain and low conversion gain mode respectively, then synthesize by operation
One frame has the image of high dynamic range, is implemented as follows:
A. circuit is initialized first, each initializing signal is as shown in a process in Fig. 3 in circuit；
Exposure process:
B. light source pulse is opened, PD is exposed；According to control signal gs_txa and gs_txb, transmission transistor TXa
It is connected with TXb, successively alternate conduction, the charge for accumulating photodiode PD are transferred to capacitor with π phase difference by TXa and TXb
Cina and Cinb；When end exposure, control signal int is set to low level, and the charge that photodiode PD accumulates is stored respectively
To capacitor Cina and Cinb；
Storing process:
C. control signal rst and dcg is set to high level, and transistor RSTa, RSTb and DCGa, DCGb conducting reset
Crsta, Crstb, Csiga, Csigb and fda, fdb, and initial signal is saved respectively to Crsta and Crstb；
D.int is set to high level, and the charge stored in capacitor Cina and Cinb is transferred to fda and fdb respectively, controls signal
When sa is set to low level, signal voltage is saved in respectively in capacitor Csiga and Csigb；
Reading process:
E.gs_sel signal is set to high level, and high-conversion-gain HCG is read in row selecting transistor GS_Sa and GS_Sb conducting
When initial signal, read the signal voltage Vah0 and Vbh0 of the first reading circuit and the second reading circuit respectively；
F.sb signal is set to high level, and transistor GRSTa and GRSTb are connected, the electricity stored in capacitor Csiga and Csigb
Lotus is redistributed with the charge stored in Crsta and Crstb respectively；
G. respectively read high-conversion-gain HCG when the first reading circuit and the second reading circuit voltage signal Vah1 and
Vbh1；
As shown in Figure 3, it repeats above operation, reads the image of the low conversion gain LCG of a frame.Low conversion gain it is initial
Signal and signal voltage are respectively VaL1 and VaL0, VbL1 and VbL0.
To VaL1 and VaL0, Vah1 and Vah0, VbL1 and VbL0, Vbh1 and Vbh0 carry out operation, and VaL=can be obtained
VaL1-VaL0, Vah=Vah1-Vah0, VbL=VbL1-VbL0, Vbh=Vbh1-Vbh0.
Two frame signals under different gains can synthesize HDR signal, Va=f (Vah, VaL), Vb=f (Vbh, VbL).Such as
The width of fruit signal source pulse is T, then the time that light source flies in the sky is Ttof=T*Vb/ (Va+Vb), therefore object distance
The distance d=Ttof/2*C=1/2*C*T*Vb/ (Va+Vb) of pixel array, wherein C is the spread speed of light in a vacuum.
In the sequence circuit of Fig. 3, dash area indicates effective charge accumulation time domain in gs_txa and gs_txb signal.
The embodiment of the present invention one provide the TOF pixel circuit with high dynamic range, can realize respectively rolling exposure with
Light source under the global exposure mode distance of flight time and target object range pixel array in the sky.
Embodiment two:
Fig. 4 is the TOF image element circuit structure figure with high dynamic range of embodiment two proposed by the present invention.With the present invention
Different piece is signal storage control unit in one circuit of embodiment.First reading circuit described in the present embodiment and second is read
Signal storage control unit in sense circuit respectively includes the first signal storage control transistor INa and INb, second signal storage
Control transistor RDa and RDb and capacitor Cina and Cinb.
By taking the first reading circuit as an example, the first signal storage control transistor INa is connected to transmission transistor TXa and second
Between signal storage control transistor RDa, second signal storage control transistor is connected to floating diffusion point fda, capacitor Cina
One end is connected to the tie point of transistor INa and RDa, and the other end is connected to given voltage Vrm.Second reading circuit and first is read
The mutually symmetrical circuit of sense circuit, device setting and connection type are identical, and no further explanation will be given.
Fig. 5 is the timing diagram for the TOF pixel circuit that the present invention implements the rolling exposure mode that two propose.
Roll exposure mode:
A. circuit is initialized；
B. light source pulse is opened, photodiode PD is exposed, according to control signal gs_txa and gs_txb, transistor
With π phase difference, successively alternate conduction, the charge for accumulating photodiode PD are transferred to capacitor Cina and Cinb to TXa and TXb；
When end exposure, control signal int be set to low level by the photodiode PD charge accumulated be respectively stored into capacitor Cina and
Cinb；
C. control signal rs_sel is set to high level, transistor RS_Sa and RS_Sb conducting；Rst and dcg are set to high level,
Transistor RSTa, RSTb and DCGa, DCGb conducting, floating diffusion point fda and fdb are reset to voltage Vrab；
When d. reading low conversion gain respectively the initial signal voltage VaL0 of the first reading circuit and the second reading circuit and
VbL0；
E. control signal rst is set to high level, resets again to floating diffusion point fda and fdb；
F. control signal dcg is set to low level, reads high-conversion-gain HCG initial signal voltage, the first reading circuit and
The output voltage of second reading circuit is respectively Vah0 and Vbh0；
G. control signal rd is set to high level, and transistor RDa and RDb are connected, the charge stored in capacitor Cina and Cinb
It is transferred to floating diffusion point fda and fdb respectively；
H. control signal rd is set to low level, signal voltage when reading high-conversion-gain, and the first reading circuit and second is read
The output voltage of sense circuit is respectively Vah1 and Vbh1；
I. control signal rd and dcg is set to high level, and Partial charge is transferred to capacitor Cdcga and Cdcgb；
J. control signal rd is set to low level, reads the signal voltage of low conversion gain, and the first reading circuit and second are read
The output of sense circuit is respectively VaL1 and VbL1.
Are carried out by related operation, obtains VaL by VaL1 and VaL0, Vah1 and Vah0, VbL1 and VbL0, Vbh1 and Vbh0 respectively
=VaL1-VaL0, Vah=Vah1-Vah0, VbL=VbL1-VbL0, Vbh=Vbh1-Vbh0.Different gains (high-conversion-gain/
Low conversion gain) under two frame signals can synthesize HDR signal, Va=f (Vah, VaL), Vb=f (Vbh, VbL).
If signal source pulse width is T, the time that light source flies in the sky is Ttof=T*Vb/ (Va+Vb), therefore
The distance of target object range pixel array be d=Ttof/2*C=1/2*C*T*Vb/ (Va+Vb), wherein C be light in a vacuum
Spread speed.
Global exposure mode:
Fig. 6 is the timing diagram of the TOF pixel circuit for the global exposure mode that the embodiment of the present invention two is proposed.
A. circuit is initialized；
Exposure process:
B. light source pulse is opened, photodiode PD is exposed；According to control signal gs_txa and gs_txb, crystal
Pipe TXa and TXb with π phase difference successively alternate conduction, the charge for accumulating photodiode PD be transferred to capacitor Cina and
Cinb；When end exposure, control signal int is set to low level, and the charge that photodiode PD accumulates is stored respectively to capacitor
Cina and Cinb；
Storing process:
C. control signal rst and dcg is set to high level, transistor RSTa and RSTb, DCGa and DCGb conducting, respectively to floating
Dynamic diffusion point fda and fdb voltage amplitude；Control signal sb be set to low level, reset signal is stored in respectively capacitor Crsta and
Crstb；
D. control signal rd is set to high level, transistor RDa and RDb conducting, the electricity that will be stored in capacitor Cina and Cinb
Lotus is transferred to floating diffusion point fda and fdb respectively；Control signal sa is set to low level, and signal voltage is stored in capacitor respectively
In Csiga and Csigb；
Reading process:
E. control signal gs_sel is set to high level, and row selecting transistor GS_Sa and GS_Sb conducting are read high conversion and increased
The initial signal of benefit, reads voltage signal Vah0 and Vbh0 at this time respectively；
F. control signal sb is set to high level, and transistor GRSTa and GRSTb conducting will deposit in capacitor Csiga and Csigb
The signal charge of storage is redistributed with the charge stored in Crsta and Crstb respectively；
G. the voltage signal Vah1 and Vbh1 when high-conversion-gain are read respectively；
As shown in Figure 6, it repeats above operation, reads image when the low conversion gain LCG of a frame.At the beginning of low conversion gain
Beginning signal and voltage signal are respectively VaL0 and VbL0, VaL1 and VbL1.To VaL1 and VaL0, Vah1 and Vah0, VbL1 and
VbL0, Vbh1 and Vbh0 carry out operation, and VaL==VaL1-VaL0, Vah=Vah1-Vah0, VbL=VbL1-VbL0 can be obtained,
Vbh=Vbh1-Vbh0.
Two frame signals under different gains can synthesize HDR signal, Va=f (Vah, VaL), Vb=f (Vbh, VbL).
If the width of signal source pulse is T, the time that light source flies in the sky is Ttof=T*Vb/ (Va+Vb), because
The distance d=Ttof/2*C=1/2*C*T*Vb/ (Va+Vb) of this object distance pixel array, wherein C is the biography of light in a vacuum
Broadcast speed.
In the present embodiment, when the dash area of Fig. 5 and gs_txa and gs_txb in Fig. 6 indicate effective charge accumulation
Domain.
In example 2, signal storage control unit respectively include the first signal storage control transistor INa and INb and
Second signal storage control transistor RDa and RDb.By taking the first reading circuit as an example, the first signal storage control transistor INa connects
It connects between transmission transistor TXa and second signal storage control transistor RDa, second signal storage control transistor RDa connects
It is connected to floating diffusion point fda.This setup can form being isolated for capacitor Cina and other circuits, reduce and leak electricity in circuit
Stream.The capacitor of signal storage control unit is isolated with other capacitors in circuit, the equivalent capacity of circuit is small, speed can also add
Fastly.
Fig. 7 is the TOF image element circuit structure figure with high dynamic range of embodiment three provided by the invention.Signal storage
Control unit respectively includes the storage control of the first signal transistor INa and INb, second signal storage control transistor RDa and RDb
And capacitor Cina and Cinb.Different from embodiment one and embodiment two, by taking the first reading circuit as an example, first signal is deposited
Storage control transistor INa is connected between the transmission transistor TXa output end of photosensitive control unit and capacitor Cina, second signal
Storage control transistor RDa is connected between the transmission transistor TXa output end of photosensitive control unit and floating diffusion point fda.
The capacitor Cina other end is connected to given voltage Vrm.
Fig. 8 is the working timing figure of the TOF pixel circuit of the rolling exposure mode of embodiment three.It is as shown in the figure:
A. circuit is initialized；
Exposure process:
B. light source pulse is opened, photodiode PD is exposed；According to control signal gs_txa and gs_txb, crystal
Pipe TXa and TXb with π phase difference successively alternate conduction, the charge for accumulating photodiode PD be transferred to capacitor Cina and
Cinb；When end exposure, control signal int is set to low level, and the photodiode PD charge accumulated is respectively stored into capacitor
Cina and Cinb；
Reading process:
C. control signal rs_sel is set to high level, transistor RS_Sa and RS_Sb conducting, and control signal rst and dcg are set
For high level, transistor RSTa, RSTb and DCGa, DCGb conducting reset floating diffusion point fda and fdb voltage；
The initial signal voltage VaL0 of the first reading circuit and the second reading circuit when d. reading low conversion gain respectively
And VbL0；
E. control signal rst is set to high level, resets again to floating diffusion point fda and fdb；
F. control signal dcg is set to low level, reads initial signal voltage when high-conversion-gain HCG, and first reads electricity
The output voltage Vah0 and Vbh0 on road and the second reading circuit；
G. control signal int is set to high level, and transistor INTa and INTb are connected, the electricity stored in capacitor Cina and Cinb
Lotus is transferred to floating diffusion point fda and fdb respectively；
H. control signal int is set to low level, reads the signal voltage of high-conversion-gain HCG, the first reading circuit and the
The output voltage of two reading circuits is respectively Vah1 and Vbh1；
I. control signal rd and dcg is set to high level, and Partial charge is transferred to Cdcga and Cdcgb；
J. control signal int is set to low level, reads the signal voltage of low conversion gain, and the first reading circuit and second are read
The output of sense circuit is respectively VaL1 and VbL1.
Are carried out by related operation, obtains VaL by VaL1 and VaL0, Vah1 and Vah0, VbL1 and VbL0, Vbh1 and Vbh0 respectively
=VaL1-VaL0, Vah=Vah1-Vah0, VbL=VbL1-VbL0, Vbh=Vbh1-Vbh0.Different gains (high-conversion-gain/
Low conversion gain) under two frame signals can synthesize HDR signal, Va=f (Vah, VaL), Vb=f (Vbh, VbL).
If signal source pulse width is T, the time that light source flies in the sky is Ttof=T*Vb/ (Va+Vb), therefore
The distance of target object range pixel array be d=Ttof/2*C=1/2*C*T*Vb/ (Va+Vb), wherein C be light in a vacuum
Spread speed.
Fig. 9 is the working timing figure of the TOF pixel circuit of the global exposure mode of embodiment three.The course of work such as institute in figure
Show:
A. circuit is initialized；
Exposure process:
B. light source pulse is opened, photodiode PD is exposed；According to control signal gs_txa and gs_txb, crystal
Pipe TXa and TXb with π phase difference successively alternate conduction, the charge for accumulating photodiode PD be transferred to capacitor Cina and
Cinb；When end exposure, control signal int is set to low level, and the charge that photodiode PD accumulates is stored respectively to capacitor
Cina and Cinb；
Storing process:
C. control signal rst, dcg is set to high level, transistor RSTa, RSTb and DCGa, DCGb conducting, to floating diffusion
The voltage of point fda and fdb is resetted；Control signal sb be set to low level, reset signal is saved in respectively capacitor Crsta and
Crstb；
D. control signal int and rd is set to high level, transistor INa and INb, RDa and RDb conducting, capacitor Cina and
The charge stored in Cinb is transferred to floating diffusion point fda and fdb respectively；Control signal sa is set to low level, by letter at this time
Number voltage is saved in Csiga and Csigb；
Reading process:
E. control signal gs_sel is set to high level, and row selecting transistor GS_Sa and GS_Sb conducting are read high conversion and increased
Initial signal when beneficial HCG reads the voltage signal Vah0 and Vbh0 of the first reading circuit and the second reading circuit respectively；
F. control signal sb is set to high level, and transistor GRSTa and GRSTb conducting will deposit in capacitor Csiga and Csigb
The signal charge of storage is redistributed with the charge stored in Crsta and Crstb respectively；
G. the voltage signal Vah1 and Vbh1 when high-conversion-gain are read respectively.
As shown in Figure 9, it repeats the above steps, reads the image of the low conversion gain of a frame.The initial letter of low conversion gain
Number and signal voltage be respectively VaL1 and VaL0, VbL1 and VbL0.
Are carried out by related operation, obtains VaL by VaL1 and VaL0, Vah1 and Vah0, VbL1 and VbL0, Vbh1 and Vbh0 respectively
=VaL1-VaL0, Vah=Vah1-Vah0, VbL=VbL1-VbL0, Vbh=Vbh1-Vbh0.Different gains (high-conversion-gain/
Low conversion gain) under two frame signals can synthesize HDR signal, Va=f (Vah, VaL), Vb=f (Vbh, VbL).
If the width of signal source pulse is T, the time that light source flies in the sky is Ttof=T*Vb/ (Va+Vb), because
The distance d=Ttof/2*C=1/2*C*T*Vb/ (Va+Vb) of this object distance pixel array, wherein C is the biography of light in a vacuum
Broadcast speed.
In embodiment three, the first signal transistor INa and INb, second signal storage control transistor RDa and RDb can subtract
Few contact of the signal memory cell capacitor Cina and Cinb with other circuits, plays the role of isolation.It can effectively reduce in circuit
Leakage current, signal storage control unit capacitor Cina and Cinb is isolated with other capacitors in circuit, equivalent capacity is small,
Circuit speed can also be accelerated.
In the present embodiment, the shadow region of gs_txa and gs_txb indicates effective charge accumulation time domain in Fig. 8 and Fig. 9.
Figure 10 is the ranging of the pixel circuit of the TOF for supporting to roll exposure and global exposure mode proposed by the invention
System fundamental block diagram.As shown in the figure, which includes TOF imaging sensor, modulated light source, and at control and signal
Manage unit.
TOF imaging sensor, the imaging sensor is is mentioned comprising any embodiment in the above-mentioned multiple embodiments of the present invention
The sensing device of TOF pixel array out.It incudes intensity of illumination and optical signal is quantified as digital signal.The imaging sensor
Circuit generates modulated signal, on the one hand for controlling the exposure process of TOF pixel array, is on the other hand sent to modulated signal
Modulated light source generates modulated light source signal.TOF imaging sensor also includes signal phase locking module, can be by generation
The signal of modulated signal and modulated light source feedback carries out phase adjustment and locking.
Modulated light source after receiving modulated signal, generates modulated optical signal, and the modulated signal received is fed back to
TOF imaging sensor.
Control and signal processing unit control the entire range-measurement system course of work, and handle and obtained by TOF imaging sensor
Image data.
Range-measurement system proposed by the present invention may be applied not only to obtain high-precision image, can also be achieved to object identification,
The functions such as obstacle detection.And the depth calculation of TOF is not influenced by target object surface gray scale and feature, can very accurately into
The detection of row target three-dimensional image.
The content that the present invention is protected is including but not limited to the several embodiment contents proposed in this patent.Art technology
The consequential amendment or modification that personnel make according to embodiments of the present invention belong to the range that the present invention is protected.
Claims (24)
1. a kind of TOF pixel circuit with high dynamic range, which is characterized in that the pixel circuit includes:
Photosensitive control unit, including photodiode and transmission transistor, the photodiode is for accumulating photoelectric effect production
Raw charge is to respond incident light；The transmission transistor is two, the photodiode is connected respectively to, for exposing
When exported according to the electric charge transfer that transmission of control signals respectively generates the photodiode；
First reading circuit and the second reading circuit, are connected respectively to the photosensitive control unit, first reading circuit and
Second reading circuit respectively include:
Reset transistor is connected to first voltage source, resets floating diffusion point voltage according to reseting controling signal；
Gain control unit is connected between the reset transistor and floating diffusion point；
Signal storage control unit, including one or more signals storage control transistor and capacitor, are used for the photoelectricity
The charge that diode photoelectric effect generates is stored；
First output unit, first output unit are connected to the floating diffusion point, for the floating diffusion point
Voltage signal amplifies and exports to alignment；
Wherein, first reading circuit and the second reading circuit are symmetric circuit, and share the photosensitive control unit；It is described
First reading circuit and the second reading circuit pass through the transmission transistor respectively and are connected to the photodiode.
2. the TOF pixel circuit according to claim 1 with high dynamic range, which is characterized in that the gain control
Unit includes gain control transistor and capacitor, and gain control transistor one end is connected to the reset transistor and described
Capacitor, the other end are connected to the floating diffusion point；The capacitor other end is connected to given voltage.
3. the TOF pixel circuit according to claim 1 with high dynamic range, which is characterized in that the signal storage
Control unit includes a signal storage control transistor and a capacitor, and the signal storage control transistor is connected to described
Between floating diffusion point and the capacitor, the capacitor other end is connected to given voltage.
4. the TOF pixel circuit according to claim 1 with high dynamic range, which is characterized in that the signal storage
Control unit includes two signal storage control transistors and a capacitor, and the first signal storage control transistor is connected to described
Between output end and second signal the storage control transistor of photosensitive control unit；The second signal storage control transistor connects
It is connected to the floating diffusion point；Described capacitor one end is connected to the first signal storage control transistor and the second signal
The tie point of storage control transistor, the other end are connected to given voltage.
5. the TOF pixel circuit according to claim 1 with high dynamic range, which is characterized in that the signal storage
Control unit includes two signal storage control transistors and a capacitor, and the first signal storage control transistor is connected to described
Between the output end of photosensitive control unit and the capacitor, the capacitor other end is connected to given voltage；Second signal storage
Control transistor is connected between the output end of the photosensitive control unit and floating diffusion point.
6. the TOF pixel circuit according to claim 1 with high dynamic range, which is characterized in that first output
Unit includes source following transistor and row selecting transistor, and the grid of the source following transistor is connected to the floating and expands
Scatterplot, drain electrode are connected to the second voltage source；Its source electrode output end is connected to alignment by the row selecting transistor.
7. according to claim 1, with the TOF pixel circuit of high dynamic range described in 3,4,5 or 6, which is characterized in that described
First reading circuit and the second reading circuit respectively include global exposure transmission unit, are connected to the source of first output unit
Pole follows between transistor source output end and alignment, for being stored, being read to signal in global exposure mode and defeated
Out.
8. the TOF pixel circuit according to claim 7 with high dynamic range, which is characterized in that the global exposure
Transmission unit includes global exposure storage unit and the second output unit.
9. the TOF pixel circuit according to claim 8 with high dynamic range, which is characterized in that the global exposure
Storage unit includes the first global exposure transmission control transistor, picture signal storage capacitance, the second global exposure transmission control
Transistor and reset signal storage capacitance, the described first global exposure transmission control transistor are connected to first output unit
Source following transistor source electrode output end and the second global exposure transmission control transistor between；Described second is global
Exposure transmission control transistor is connected to second output unit；Described image signal storage capacitance one end is connected to described
The tie point of one global exposure transmission control transistor and the second global exposure transmission control transistor, other end connection ground
End；Reset signal storage capacitance one end is connected to the described second global exposure transmission control transistor and second output
The tie point of unit, the other end connect ground terminal.
10. the TOF pixel circuit according to claim 8 with high dynamic range, which is characterized in that second output
Unit includes source following transistor and row selecting transistor, is connected between the global exposure storage unit and alignment, uses
Amplify output in the signal to the global exposure storage unit；The grid of the source following transistor is connected to the overall situation
The output end of storage unit is exposed, drain electrode is connected to tertiary voltage source；Its source electrode output end connects through the row selecting transistor
It is connected to alignment.
11. the TOF pixel circuit with high dynamic range according to claim 1 or 6, which is characterized in that described first
Voltage source and the second voltage source are variable voltage source.
12. according to claim 1, with the TOF pixel circuit of high dynamic range described in 2 or 9, which is characterized in that the electricity
Hold is parasitic capacitance, Poly capacitor, MIM capacitor, MOM capacitor or mos capacitance.
13. a kind of range-measurement system, which is characterized in that the range-measurement system includes:
TOF imaging sensor, the TOF imaging sensor include the TOF pixel electricity with high dynamic range to line up rows and columns
Road array, each pixel circuit include:
Photosensitive control unit, including photodiode and transmission transistor, the photodiode is for accumulating photoelectric effect production
Raw charge is to respond incident light；The transmission transistor is two, the photodiode is connected respectively to, for exposing
When exported according to the electric charge transfer that transmission of control signals respectively generates the photodiode；
First reading circuit and the second reading circuit, are connected respectively to the photosensitive control unit, first reading circuit and
Second reading circuit respectively include:
Reset transistor is connected to first voltage source, resets floating diffusion point voltage according to reseting controling signal；
Gain control unit is connected between the reset transistor and floating diffusion point；
Signal storage control unit, including one or more signals storage control transistor and capacitor, are used for the photoelectricity
The charge that diode photoelectric effect generates is stored；
First output unit, first output unit are connected to the floating diffusion point, for the floating diffusion point
Voltage signal amplification is exported to alignment；
Wherein, first reading circuit and the second reading circuit are symmetric circuit, and share the photosensitive control unit；It is described
First reading circuit and the second reading circuit pass through the transmission transistor respectively and are connected to the photodiode；
Signal processing unit is controlled, for the control system course of work and handles the image that the TOF pixel circuit array obtains
Data；
The modulated signal received for generating modulated optical signal after receiving modulated signal, and is fed back to institute by modulated light source
State TOF pixel circuit array.
14. range-measurement system according to claim 13, which is characterized in that the gain control unit includes gain control combinations
Body pipe and capacitor, one end of the gain control transistor are connected to the reset transistor and the capacitor, other end connection
To the floating diffusion point；The capacitor other end is connected to given voltage.
15. range-measurement system according to claim 13, which is characterized in that the TOF imaging sensor includes PGC demodulation
Module, for the signal of the modulated signal and the modulated light source feedback to be carried out phase adjustment and locking.
16. range-measurement system according to claim 13, which is characterized in that the signal storage control unit includes a letter
A number storage control transistor and capacitor, the signal storage control transistor are connected to the floating diffusion point and the electricity
Between appearance, the capacitor other end is connected to given voltage.
17. range-measurement system according to claim 13, which is characterized in that the signal storage control unit includes two letters
A number storage control transistor and capacitor, the first signal storage control transistor are connected to the output of the photosensitive control unit
Between end and second signal storage control transistor；The second signal storage control transistor is connected to the floating diffusion
Point；Described capacitor one end is connected to the first signal storage control transistor and second signal storage controls transistor
Tie point, the other end are connected to given voltage.
18. range-measurement system according to claim 13, which is characterized in that the signal storage control unit includes two letters
A number storage control transistor and capacitor, the first signal storage control transistor are connected to the output of the photosensitive control unit
Between end and the capacitor, the capacitor other end is connected to given voltage；Second signal storage control transistor is connected to institute
It states between the output end of photosensitive control unit and floating diffusion point.
19. range-measurement system according to claim 13, which is characterized in that first output unit includes that source electrode follows crystalline substance
Body pipe and row selecting transistor, the grid of the source following transistor are connected to the floating diffusion point, and drain electrode is connected to
The second voltage source；Its source electrode output end is connected to alignment through the row selecting transistor.
20. range-measurement system described in 3,16,17,18 or 19 according to claim 1, which is characterized in that first reading circuit
And second reading circuit respectively include global exposure transmission unit, be connected to the source following transistor of first output unit
Between source electrode output end and alignment, for being stored, being read and being exported to signal in global exposure mode.
21. range-measurement system according to claim 20, which is characterized in that the global exposure transmission unit includes global exposes
Optical storage unit and the second output unit.
22. range-measurement system according to claim 21, which is characterized in that the global exposure storage unit includes first complete
Office's exposure transmission control transistor, picture signal storage capacitance, the second global exposure transmission control transistor and reset signal are deposited
Storage is held, and the described first global exposure transmission control transistor is connected to the source following transistor of first output unit
Between source electrode output end and the second global exposure transmission control transistor；Described second global exposure transmission control transistor
It is connected to second output unit；Described image signal storage capacitance one end is connected to the described first global exposure transmission control
The tie point of transistor and the second global exposure transmission control transistor, the other end connect ground terminal；The reset signal is deposited
Storage holds the tie point that one end is connected to the described second global exposure transmission control transistor and second output unit, another
End connection ground terminal.
23. range-measurement system according to claim 21, which is characterized in that second output unit includes that source electrode follows crystalline substance
Body pipe and row selecting transistor are connected between the global exposure storage unit and alignment, for depositing to the global exposure
The signal of storage unit amplifies output；The grid of the source following transistor is connected to the output of the global exposure storage unit
End, drain electrode are connected to tertiary voltage source；Its source electrode output end is connected to alignment through the row selecting transistor.
24. range-measurement system described in 3,14 or 22 according to claim 1, which is characterized in that the capacitor is parasitic capacitance, Poly
Capacitor, MIM capacitor, MOM capacitor or mos capacitance.
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