CN110411578B - Low-temperature spectral emissivity measuring device based on off-axis ellipsoidal reflector - Google Patents
Low-temperature spectral emissivity measuring device based on off-axis ellipsoidal reflector Download PDFInfo
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- G—PHYSICS
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- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0806—Focusing or collimating elements, e.g. lenses or concave mirrors
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- G—PHYSICS
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- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
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- G01J5/53—Reference sources, e.g. standard lamps; Black bodies
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Abstract
The invention discloses a low-temperature spectral emissivity measuring device based on an off-axis ellipsoidal reflector, which comprises a sample furnace, a black body, the off-axis ellipsoidal reflector and a reflector shielding layer which are arranged in a vacuum cavity, wherein the off-axis ellipsoidal reflector and the reflector shielding layer are jointly used for converging a radiation signal emitted by a sample to be measured or the black body to an incident focus of a Fourier infrared spectrometer, and the signal of the black body and the signal of the sample to be measured are switched by rotating the off-axis ellipsoidal reflector. In the measuring process, the switching between the sample signal to be measured and the blackbody signal can be realized only by rotating the off-axis ellipsoidal reflector, so that the measuring process is simpler and more convenient to operate, the system repeatability is higher, and the service life is longer.
Description
Technical Field
The invention belongs to the technical field of radiation measurement and remote sensing, and particularly relates to a low-temperature spectral emissivity measuring device based on an off-axis ellipsoidal reflector.
Background
The spectral emissivity is an important thermophysical parameter of the material, and represents the external radiation capacity of the material. The accurate spectral emissivity data has important application value in important fields of radiation temperature measurement, remote sensing, aerospace and the like. In the measurement process, the spectral emissivity of the material is affected by various factors such as temperature, wavelength, surface roughness and the like, so that accurate measurement is difficult. Compared with medium-high temperature emissivity measurement, the low-temperature spectral emissivity of the material is more difficult to measure. When the temperature is lower, the radiation quantity of the material to the space is reduced geometrically, so that the influence of the background radiation of the surrounding environment is more obvious, the signal-to-noise ratio of the measuring device is low, and the measuring error is large. At present, no relevant measurement standard exists internationally, and devices capable of measuring the low-temperature spectral emissivity of the material are few. According to the definition of the emissivity, the emissivity of the material needs to be measured by respectively measuring the radiant quantities of a target object and a standard black body under the same condition, and the emissivity of the material is obtained by comparison. At present, low-temperature spectral emissivity measuring devices at home and abroad mainly have two modes for realizing the switching between a target and a standard black body: 1. switch between the two is realized through linear displacement platform removal blackbody and sample stove, because low temperature emissivity measuring device must be in vacuum low temperature environment, consequently realize under this environment that position switching between the two requires the device must have sufficient space, and measuring device volume is great, and the cost is expensive, and the motor bearing is great, and equipment temperature field distributes and easily receives the influence, and vacuum apparatus is yielding, and life is short. 2. The optical path is composed of an ellipsoidal reflector and a plane mirror, or two off-axis parabolic reflectors. The switching between the plane mirror and the paraboloid mirror is realized through the switching and the rotation of the plane mirror or the paraboloid mirror, and by the method, the optical signal can enter the final detection device after being reflected twice, and compared with the first method, one interference source is increased. The cryogenic radiation signal itself is weak and the introduction of any one source of interference increases the measurement uncertainty of the system.
Disclosure of Invention
The invention aims to solve the problems that the sample and black body switching difficulty is high in the conventional low-temperature emissivity measuring system, and the introduction of an interference source can increase the measurement uncertainty, and provides a low-temperature spectral emissivity measuring device based on an off-axis ellipsoidal reflector.
The invention adopts the following technical scheme for realizing the aim, and the device for measuring the low-temperature spectral emissivity based on the off-axis ellipsoidal reflector is characterized by comprising a sample furnace, a black body, the off-axis ellipsoidal reflector and a reflector shielding layer which are arranged in a vacuum cavity, wherein a sample to be measured is positioned in the sample furnace, the sample to be measured is positioned at a focus A of an ellipse A, the black body is positioned at a focus A 'of the ellipse B, the ellipse A and the ellipse B share a focus B (B'), the focus B is an incident focus of a Fourier infrared spectrometer, an included angle between a major axis of the ellipse A and a major axis of the ellipse B is 60 degrees, the eccentricity of the ellipse A and the ellipse B is 0.866, the rotation center of the off-axis ellipsoidal reflector is positioned at a point C of intersection of the ellipse A and the ellipse B, the reflector shielding layer is arranged outside the off-axis ellipsoidal reflector, and the reflector shielding layer are jointly used for converging the sample to be measured or a radiation signal emitted from the black body to an entrance of the Fourier infrared spectrometer And (4) emitting a focus, and switching between the black body signal and the sample signal to be detected by rotating the off-axis ellipsoidal reflector.
Preferably, the cross section of the off-axis ellipsoidal reflector satisfies an elliptic equation with eccentricity e equal to 0.866, the off-axis ellipsoidal reflector is manufactured by grinding a SiC material with a low expansion coefficient, a rotation center is arranged at the center of the mirror surface of the off-axis ellipsoidal reflector, the mirror surface of the off-axis ellipsoidal reflector is plated with a reflective gold film, and radiation signals of a black body or a sample to be detected are respectively converged to an incident focus of the Fourier infrared spectrometer by rotating the off-axis ellipsoidal reflector.
Preferably, the vacuum chamber is made of 304 stainless steel materials, the pumping system of the vacuum chamber is composed of a mechanical pump and a molecular pump, and the vacuum degree can reach 10 -4 Pa。
Preferably, the blackbody is a variable-range low-temperature blackbody, and the temperature range of the blackbody is-60-100 ℃.
Preferably, the sample furnace consists of a sample furnace double-layer shell and a heating main body, wherein low-temperature constant-temperature liquid is introduced into the sample furnace double-layer shell, and the first-stage temperature control of a sample to be detected is realized by changing the temperature of the low-temperature constant-temperature liquid; the heating main body mainly comprises an alumina ceramic chip and a heating wire arranged in the alumina ceramic chip, and the secondary temperature control of the sample to be detected is realized through heating of the heating wire.
Preferably, a platinum resistor for measuring temperature is arranged in the heating main body at a position 3mm away from the surface of the sample to be measured, another platinum resistor with the same type is arranged in the center of the sample to be measured, and the surface temperature of the sample to be measured is calculated according to the data of the two temperature measuring points and a heat conduction equation in the vacuum cavity.
Preferably, the sample to be detected is a wafer with the diameter of 50mm and the thickness of 2mm, and the accurate temperature control of the sample to be detected is realized by adjusting the temperature of the double-layer shell of the sample furnace and the temperature of the heating main body.
Preferably, heat sinks are arranged between the sample furnace and the reflector shielding layer, between the black body and the reflector shielding layer and between the Fourier infrared spectrometer and the reflector shielding layer, the heat sinks mainly comprise liquid nitrogen pipelines and heat sinks wound on the liquid nitrogen pipelines, the liquid nitrogen pipelines and the heat sinks are made of oxygen-free copper materials and are connected through welding to conduct heat, the cone matrix structure is carved on the inner wall of the vacuum cavity and the inner wall of the heat sink, and high-emissivity black paint is sprayed on the surface of the cone matrix structure to effectively reduce the influence of background radiation in the measuring process.
Preferably, the two ends of the heat sink are respectively connected with a low-temperature diaphragm, the low-temperature diaphragm is cooled through heat conduction and heat radiation between the heat sink and the low-temperature diaphragm, and the low-temperature diaphragm is respectively positioned behind the outlet of the sample furnace, behind the outlet of the black body furnace, in front of the front ends of the off-axis ellipsoidal reflector in three directions and in front of the inlet of the Fourier infrared spectrometer and used for effectively reducing the influence of stray light in the measurement process.
Preferably, the low-temperature spectral emissivity measuring device based on the off-axis ellipsoidal reflector is characterized by comprising the following specific operation processes:
when emissivity is measured, the measured blackbody signal is expressed as:
S(λ)＝γ·ε BB ·L BB (λ，T BB )+S amb (1)
thus, two different temperatures T are first measured 1 、T 2 Black body radiation signal of time:
S 1 (λ)＝γ·ε BB ·L BB (λ，T 1 )+S amb (2)
S 2 (λ)＝γ·ε BB ·L BB (λ，T 2 )+S amb (3)
wherein S 1 (lambda) and S 2 (λ) are eachThe measurement signals of the black body at two different temperatures, gamma is the response coefficient of the measurement system, epsilon BB Is the effective emissivity of the black body, L BB (λ，T 1 ) And L BB (λ，T 2 ) Are respectively a black body T 1 、T 2 The time radiation brightness is respectively calculated by the Planck black body radiation formula, wherein S amb Is the signal of the background radiation;
the calculation of the joint type (2) and the formula (3) is that:
at the moment, the off-axis ellipsoidal reflector is rotated by 120 degrees to realize the switching between the sample to be measured and the black body, and the signal of the sample to be measured obtained by measurement is as follows:
S s (λ，T)＝γ·ε s ·L BB (λ，T)+S amb (5)
the spectrum emissivity of the sample to be measured is obtained by the united vertical type (1), the formula (4) and the formula (5):
compared with the prior art, the invention has the advantages that:
1. the low-temperature spectral emissivity measuring device provided by the invention can realize the switching between the sample signal and the black body signal only by rotating the reflector by 120 degrees in overweight measurement, so that the operation of the measuring process is simpler and more convenient, the system has higher repeatability and the service life is longer;
2. the radiation signal enters the Fourier infrared spectrometer through one-time reflection, so that the thermal radiation interference source is few, and the system measurement precision is improved;
3. on the basis of the traditional vacuum cavity, the radiation cavity of the invention is characterized in that crossed V-shaped grooves are engraved on the inner walls of the cavity and the heat sink, and high-emission black paint is sprayed, thus being beneficial to reducing the influence of background radiation;
4. the invention arranges a plurality of low-temperature diaphragms in the light path, which is beneficial to reducing the influence of stray light.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a schematic diagram of the positions of a sample to be measured, a black body, a Fourier infrared spectrometer and an off-axis ellipsoidal reflector in the invention;
FIG. 3 is a schematic diagram of a pyramidal matrix structure drawn on the inner wall of the vacuum chamber and the heat sink in the present invention.
In the figure: the method comprises the following steps of 1-vacuum cavity, 2-sample furnace, 3-sample to be detected, 4-liquid nitrogen pipeline, 5-low temperature diaphragm, 6-black body, 7-reflector shielding layer, 8-off-axis ellipsoidal reflector, 9-Fourier infrared spectrometer and 10-detector.
Detailed Description
The technical scheme of the invention is described in detail by combining the attached drawings, the low-temperature spectral emissivity measuring device based on the off-axis ellipsoidal reflector comprises a sample furnace 2, a black body 6, an off-axis ellipsoidal reflector 8 and a reflector shielding layer 7 which are arranged in a vacuum chamber 1, a sample 3 to be measured is arranged in the sample furnace 2, the sample 3 to be measured is arranged at a focus A of an ellipse A, the black body 6 is arranged at a focus A 'of the ellipse B, the focus B (B') is shared by the ellipse A and the ellipse B, the focus B is an incident focus of a Fourier infrared spectrometer 9, an included angle between major axes of the ellipse A and the ellipse B is 60 degrees, the eccentricity of the ellipse A and the eccentricity of the ellipse B are both 0.866, the rotation center of the off-axis ellipsoidal reflector 8 is arranged at a point C of the intersection of the ellipse A and the ellipse B, the reflector shielding layer 7 is arranged on the outer side of the off-axis ellipsoidal reflector 8, and the reflector shielding layer 7 are jointly used for converging radiation signals emitted by the sample 3 or the black body 6 to be measured to the sample furnace The incident focus of the Fourier infrared spectrometer 9 realizes the switching between the signal of the black body 6 and the signal of the sample 3 to be measured by rotating the off-axis ellipsoidal reflector 8, and one side of the Fourier infrared spectrometer 9 is connected with a detector 10.
The cross section of the off-axis ellipsoidal reflector 8 meets the elliptic equation with the eccentricity e equal to 0.866, the off-axis ellipsoidal reflector 8 is manufactured by grinding a SiC material with a low expansion coefficient, the rotation center is arranged at the center of the mirror surface of the off-axis ellipsoidal reflector 8, the mirror surface of the off-axis ellipsoidal reflector 8 is plated with a reflecting gold film, and radiation signals of a black body 6 or a sample 3 to be detected are respectively converged at the incident focus of a Fourier infrared spectrometer 9 by rotating the off-axis ellipsoidal reflector 8.
The vacuum chamber 1 of the present invention is made of 304 stainless steel material, and the pumping system of the vacuum chamber 1 is composed of a mechanical pump and a molecular pump, and the vacuum degree can reach 10 -4 Pa; the black body 6 is a variable-range low-temperature black body, and the temperature range is-60-100 ℃.
The sample furnace 2 consists of a sample furnace double-layer shell and a heating main body, wherein low-temperature constant-temperature liquid is introduced into the sample furnace double-layer shell, and the primary temperature control of a sample 3 to be detected is realized by changing the temperature of the low-temperature constant-temperature liquid; the heating main body mainly comprises an alumina ceramic chip and a heating wire arranged in the alumina ceramic chip, and the secondary temperature control of the sample 3 to be detected is realized through the heating of the heating wire; a platinum resistor for measuring temperature is arranged in the heating main body at a position 3mm away from the surface of the sample to be measured 3, another platinum resistor with the same type is arranged at the center of the sample to be measured 3, and the surface temperature of the sample to be measured 3 is calculated according to the data of two temperature measuring points and a heat conduction equation in the vacuum cavity 1; the sample 3 to be measured is a wafer with the diameter of 50mm and the thickness of 2mm, and the accurate temperature control of the sample 3 to be measured is realized by adjusting the temperature of the double-layer shell of the sample furnace and the temperature of the heating main body.
Heat sinks are arranged between the sample furnace 2 and the reflector shielding layer 7, between the black body 6 and the reflector shielding layer 7 and between the Fourier infrared spectrometer 9 and the reflector shielding layer 7, the heat sinks are mainly formed by winding a liquid nitrogen pipeline 4 on the outer wall of an oxygen-free copper pipe with the thickness of 5mm, the liquid nitrogen pipeline 4 and the copper pipe are connected through welding to conduct heat, a cone matrix structure is carved on the inner wall of the vacuum cavity 1 and the inner wall of the heat sink, and high-emissivity black paint is sprayed on the surface of the cone matrix structure to effectively reduce the influence of background radiation in the measuring process.
The two ends of the heat sink are respectively connected with the low-temperature diaphragms 5, the cooling of the low-temperature diaphragms 5 is realized through heat conduction and heat radiation between the heat sink and the low-temperature diaphragms 5, and the low-temperature diaphragms 5 are respectively positioned behind the outlets of the sample furnace 2, the black body furnace, the front end of the off-axis ellipsoidal reflector 8 in three directions and in front of the inlets of the Fourier infrared spectrometers 9 and are used for effectively reducing the influence of stray light in the measurement process.
The invention relates to a low-temperature spectral emissivity measuring device based on an off-axis ellipsoidal reflector, which comprises the following specific measuring processes:
when emissivity is measured, the measured blackbody signal is expressed as:
S(λ)＝γ·ε BB ·L BB (λ，T BB )+S amb (1)
thus, two different temperatures T are first measured 1 、T 2 Black body radiation signal of time:
S 1 (λ)＝γ·ε BB ·L BB (λ，T 1 )+S amb (2)
S 2 (λ)＝γ·ε BB ·L BB (λ，T 2 )+S amb (3)
wherein S 1 (lambda) and S 2 (lambda) are the measurement signals of the black body at two different temperatures, gamma is the response coefficient of the measurement system, epsilon BB Is the effective emissivity of the black body, L BB (λ，T 1 ) And L BB (λ，T 2 ) Are respectively a black body T 1 、T 2 The time radiation brightness is respectively calculated by the Planck black body radiation formula, wherein S amb Is the signal of the background radiation;
the calculation of the joint type (2) and the formula (3) is that:
at the moment, the off-axis ellipsoidal reflector is rotated by 120 degrees to realize the switching between the sample to be measured and the black body, and the signal of the sample to be measured obtained by measurement is as follows:
S s (λ，T)＝γ·ε s ·L BB (λ，T)+S amb (5)
the spectrum emissivity of the sample to be measured is obtained by the united vertical type (1), the formula (4) and the formula (5):
while there have been shown and described what are at present considered the fundamental principles of the invention, its essential features and advantages, the invention further resides in various changes and modifications which fall within the scope of the invention as claimed.
Claims (10)
1. A low-temperature spectral emissivity measuring device based on an off-axis ellipsoidal reflector is characterized by comprising a sample furnace, a black body, the off-axis ellipsoidal reflector and a reflector shielding layer which are arranged in a vacuum cavity, wherein a sample to be measured is positioned in the sample furnace, the sample to be measured is positioned at a focus A of an ellipse A, the black body is positioned at a focus A 'of the ellipse B, the ellipse A and the ellipse B share one focus, the focus position is represented by B and B', the focus position is an incident focus of a Fourier infrared spectrometer, an included angle between major axes of the ellipse A and the ellipse B is 60 degrees, the eccentricity of the ellipse A and the ellipse B is 0.866, the rotation center of the off-axis ellipsoidal reflector is positioned at a point C of intersection of the ellipse A and the ellipse B, the eccentricity of the off-axis ellipsoidal reflector is equal to that of the ellipse A and the ellipse B, the reflector shielding layer is arranged on the outer side of the ellipsoidal reflector, the off-axis ellipsoidal reflector and the reflector shielding layer are jointly used for converging radiation signals emitted by a sample to be detected or a black body to an incident focus of the Fourier infrared spectrometer, and switching between black body signals and sample signals to be detected is realized by rotating the off-axis ellipsoidal reflector.
2. The off-axis ellipsoidal reflector-based low temperature spectral emissivity measurement device of claim 1, wherein: the off-axis ellipsoidal reflector has a cross section meeting an elliptic equation with eccentricity e equal to 0.866, is made of SiC material with low expansion coefficient by grinding, has a rotation center at the center of the mirror surface, has a mirror surface plated with a reflective gold film, and can respectively focus radiation signals of a black body or a sample to be measured to an incident focus of a Fourier infrared spectrometer by rotating the off-axis ellipsoidal reflector.
3. The off-axis ellipsoidal reflector-based low-temperature spectral emissivity measurement device of claim 1, wherein: the vacuum chamber is made of 304 stainless steel materials, the air pumping system of the vacuum chamber is composed of a mechanical pump and a molecular pump, and the vacuum degree can reach 10 -4 Pa。
4. The off-axis ellipsoidal reflector-based low-temperature spectral emissivity measurement device of claim 1, wherein: the blackbody is a variable-range low-temperature blackbody, and the temperature range of the blackbody is-60-100 ℃.
5. The off-axis ellipsoidal reflector-based low-temperature spectral emissivity measurement device of claim 1, wherein: the sample furnace consists of a sample furnace double-layer shell and a heating main body, wherein low-temperature constant-temperature liquid is introduced into the sample furnace double-layer shell, and the primary temperature control of a sample to be detected is realized by changing the temperature of the low-temperature constant-temperature liquid; the heating main body mainly comprises an alumina ceramic chip and a heating wire arranged in the alumina ceramic chip, and the secondary temperature control of the sample to be detected is realized through heating of the heating wire.
6. The off-axis ellipsoidal reflector-based low-temperature spectral emissivity measurement device of claim 5, wherein: and a platinum resistor for measuring temperature is arranged in the heating main body at a position 3mm away from the surface of the sample to be measured, another platinum resistor with the same type is arranged at the center of the sample to be measured, and the surface temperature of the sample to be measured is obtained through calculation according to the data of the two temperature measuring points and a heat conduction equation in the vacuum cavity.
7. The off-axis ellipsoidal reflector-based low-temperature spectral emissivity measurement device of claim 1, wherein: the sample to be measured is a wafer with the diameter of 50mm and the thickness of 2mm, and the accurate temperature control of the sample to be measured is realized by adjusting the temperature of the double-layer shell of the sample furnace and the temperature of the heating main body.
8. The off-axis ellipsoidal reflector-based low-temperature spectral emissivity measurement device of claim 1, wherein: all be equipped with heat sink between sample stove and the speculum shielding layer, between black body and the speculum shielding layer and between Fourier infrared spectrometer and the speculum shielding layer, this heat sink mainly by anaerobic copper liquid nitrogen pipeline winding constitute on the anaerobic copper pipe outer wall that 5mm is thick, liquid nitrogen pipeline and copper pipe pass through welded connection heat conduction, the cone matrix structure is all carved with to vacuum cavity and heat sink inner wall to at the high emissivity black lacquer of the surface spraying of this cone matrix structure, be used for effectively reducing the influence of measurement in-process background radiation.
9. The off-axis ellipsoidal reflector-based low temperature spectral emissivity measurement device of claim 8, wherein: the two ends of the heat sink are respectively connected with a low-temperature diaphragm, the low-temperature diaphragm is cooled through heat conduction and heat radiation between the heat sink and the low-temperature diaphragm, and the low-temperature diaphragm is respectively positioned behind an outlet of the sample furnace, an outlet of the black body furnace, the front end of the off-axis ellipsoidal reflector in three directions and in front of an inlet of the Fourier infrared spectrometer and is used for effectively reducing the influence of stray light in the measuring process.
10. The device for measuring the low-temperature spectral emissivity based on the off-axis ellipsoidal reflector according to any one of claims 1 to 9, wherein the specific operation process is as follows:
when emissivity is measured, the measured blackbody signal is expressed as:
S(λ)＝γ·ε BB ·L BB (λ，T BB )+S amb (1)
thus, two different temperatures T are first measured 1 、T 2 Black body radiation signal of time:
S 1 (λ)＝γ·ε BB ·L BB (λ，T 1 )+S amb (2)
S 2 (λ)＝γ·ε BB ·L BB (λ，T 2 )+S amb (3)
wherein S 1 (lambda) and S 2 (lambda) are the measurement signals of the black body at two different temperatures, gamma is the response coefficient of the measurement system, epsilon BB Is the effective emissivity of the black body, L BB (λT 1 ) And L BB (λT 2 ) Are respectively a black body T 1 、T 2 The time radiation brightness is respectively calculated by the Planck black body radiation formula, wherein S amb Is the signal of the background radiation;
the calculation of the joint type (2) and the formula (3) is that:
at the moment, the off-axis ellipsoidal reflector is rotated by 120 degrees to realize the switching between the sample to be measured and the black body, and the signal of the sample to be measured obtained by measurement is as follows:
S s (λ，T)＝γ·ε s ·L BB (λ，T)+S amb (5)
the spectrum emissivity of the sample to be measured is obtained by the united vertical type (1), the formula (4) and the formula (5):
sbb (λ, T) represents the black body measurement signal at T temperature, λ being the measurement wavelength.
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