CN110400742A - A kind of crucial radio frequency chip material of 5G communication - Google Patents
A kind of crucial radio frequency chip material of 5G communication Download PDFInfo
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Abstract
The present invention relates to a kind of 5G to communicate crucial radio frequency chip material, the preparation process of the radio frequency chip material includes the following steps: gallium nitride wafer after preliminary cutting, grinding, milled processed, carry out finishing polish processing, cleaning agent washing is carried out to gallium nitride wafer surface after finishing polish, then it dries to get radio frequency chip material.The radio frequency chip material that the present invention is prepared has lower surface roughness, and smooth surface is in atomic steps pattern, and surface defects such as no marking, pit are expected to be used widely in application fields such as 5G, Internet of Things, intelligent automobiles.
Description
Technical field
The present invention relates to a kind of 5G to communicate crucial radio frequency chip material.
Background technique
5th third-generation mobile communication technology (English: 5th generation mobile networks or 5th
Generation wireless systems, 5th-Generation, abbreviation 5G) it is latest generation cellular mobile communication technology,
It is the extension after 4G (LTE-A, WiMax), 3G (UMTS, LTE) and 2G (GSM) system.The performance objective of 5G be high data rate,
Reduction postpones, saves the energy, reduces cost, raising power system capacity is connected with large-scale equipment.5G specification in Release-15
First stage be in order to adapt to early stage business deployment.The second stage of Release-16 will be completed the year two thousand twenty April, as
The candidate of IMT-2020 technology submits to International Telecommunication Union (ITU).ITU IMT-2020 code requirement speed is up to 20Gbit/
Wide channels bandwidth and large capacity MIMO may be implemented in s.
As 2G, 3G and 4G mobile network of early stage, 5G network is digital cellular network, in such networks, supply
The coverage of quotient's covering is divided into many referred to as cellular small geographic areas.Indicate that the analog signal of sound and image exists
It is digitized in mobile phone, converted by analog-digital converter and is transmitted as bit stream.All 5G wireless devices in honeycomb pass through nothing
Line electric wave in honeycomb local antenna array and low-power automatic send-receive unit (transmitter and receiver) communicated.Transceiver from
Public frequency pond channel distribution may be reused in the honeycomb that these channels are geographically separated.Local antenna passes through high band
Wide optical fiber or wireless backhaul connection are connect with telephone network and internet.As existing mobile phone, when user is from a honeycomb
When traversing to another honeycomb, their mobile device incites somebody to action automatic " switching " to the antenna in new honeycomb.
The main advantage of 5G network is that message transmission rate is significantly larger than pervious cellular network, reaches as high as
10Gbit/s, it is faster than current wired internet, it is 100 times faster than previous 4G LTE cellular network.Another advantage be compared with
Low network delay (faster response time) is lower than 1 millisecond, and 4G is 30-70 milliseconds.Faster due to data transmission, 5G net
Network will provide service not just for mobile phone, but also will become general family and office network provider, with cable network
Provider's competition.Pervious cellular network provides the low data rate linking Internet suitable for mobile phone, but a mobile phone is sent out
General the Internet provider of enough bandwidth as home computer cannot economically be provided by penetrating tower.
It is divided according to the main industrial chain of the 5G communication technology, main key application material can be divided into device material, antenna
4 major class such as material, light transmission material and encapsulating material.
In the 5G communication technology, a large amount of medium-high frequency device is needed, mainly includes filter, power amplifier, low noise
Amplifier, RF switch etc..Compound semiconductor materials is the core key material for preparing these devices.Compound base semiconductor
Material mainly includes the compound semiconductors such as GaAs (GaAs), gallium nitride (GaN), silicon carbide (SiC), has forbidden bandwidth
Greatly, the function such as spectral efficient, the processing of big frequency wave, low delay response may be implemented in the performances such as electron mobility height, direct forbidden band
Energy.Compound semiconductor materials future will be used widely in application fields such as 5G, Internet of Things, intelligent automobiles.
Gallium nitride, molecular formula GaN, English name Gallium nitride are the III-V of a kind of nitrogen (V) and gallium (III)
Compounds of group, the semiconductor material of direct band gap (Direct Bandgap) (direct transition type) have band gap wide (at room temperature,
Eg=3.39eV), atom key is strong, thermal conductivity is high, stable chemical performance (hardly by any acid corrosion), Radiation hardness are strong,
Structure similar to buergerite, hardness is very high the features such as.GaN is known as after first generation Ge, Si semiconductor material, second generation GaAs, InP
Third generation semiconductor material after compound semiconductor materials, in photoelectron, high temperature high power device and high-frequency microwave device
Application aspect has wide prospect.
Gallium nitride technology can trace back to 1970, and it is next that the Radio Corporation of America (RCA) develops a kind of gallium nitride technique
Manufacture LED.It is used for example in the laser diode of purple light, nonlinear semiconductor light-pumped solid state laser (Diode can not used
Pumped Solid-State Laser) under conditions of, generate purple light (405nm) laser.The many LED sold currently on the market
It is exactly the gallium nitride technology using Sapphire Substrate.In addition to LED, gallium nitride is also used to power semiconductor and radio-frequency devices
On.Power chip based on gallium nitride is just stood firm in market.It, can be with due to the special crystal structure of gallium nitride and wide energy gap
Used in high power, high speed photoelectric cell in, same voltage can be realized in higher frequency, to bring higher function
Rate and better efficiency performance.
Radio frequency gallium nitride technology is the perfect match of 5G, and base station power amplification uses gallium nitride.Gallium nitride (GaN), GaAs (GaAs)
It is common three pentavalents semiconductor material in radio frequency applications with indium phosphide (InP).With the high frequencies technique phase such as GaAs and indium phosphide
Than gallium nitride device exports more powerful；Compared with LDCMOS and silicon carbide (SiC) constant power technique, the frequency of gallium nitride
Characteristic is more preferable.The instant bandwidth of gallium nitride device is higher, and this point is critically important, and the use and preparation of carrier aggregation technology use
The carrier wave of higher frequency is provided to obtain bigger bandwidth.
Gallium nitride has significant quantity compared with the Si power device of the market mainstream in the various aspects such as performance, efficiency, energy consumption, size
The promotion of grade.And the threshold of 5G technology is relatively higher, not only needs ultra-wide band, with greater need for high-peed connection, low access delay, low function
Consume the interconnection that bulk device is supported with high reliability.Gallium nitride device possesses higher power density, higher efficiency and more
Low power consumption just can satisfy requirement of the 5G communication for performance of semiconductor element device.
As new generation of semiconductor element, the core technology in terms of gallium nitride is concentrated mainly on overseas enterprise on hand at present.
Gallium nitride is the key technology of important defence and military product, and foreign countries are to China's technology blockage, and China's gallium nitride core material at present
Material, device Original Innovative Capability are still relatively weak, and the country faces many challenges in the research and development and production of gallium nitride device.Nitridation
The market prospects of gallium device are very wide, and mobile phone fast charge, 5G communication, power supply, new-energy automobile etc. are all important application market.
CN106398544A discloses a kind of processing method of gallium nitride, however, by the processed gallium nitride of the patent
Surface roughness it is still higher, it is difficult to meet 5G communication high standards.
Summary of the invention
In order to which the surface roughness for solving gallium nitride in the prior art is still higher, it is difficult to which the high standard for meeting 5G communication is wanted
It asks, the invention proposes following technical solutions:
A kind of 5G communicates crucial radio frequency chip material, the preparation process of the radio frequency chip material include the following steps: by
Gallium nitride wafer carries out finishing polish processing, to gallium nitride wafer after finishing polish after preliminary cutting, grinding, milled processed
Surface carries out cleaning agent washing, then dries to get radio frequency chip material.
Wherein, precise polishing solution used in the finishing polish processing includes following weight percentage components: 20~
30wt% mixing abrasive grain, 0.4~0.8wt% corrosive agent, 0.3~0.7wt% oxidant, 0.001~0.01wt% promotor, water
Surplus；
Preferably, the mixing abrasive grain is made of in mass ratio for 1:1 purifying silica solution and modified boron carbide；
Preferably, the particle size range of the purifying silica solution is 60~90nm；
Preferably, the particle size range of the modified boron carbide is 100~130nm.
Wherein, the preparation process of the modified boron carbide includes the following steps:
Structural formula is H by S12N-CH2CH2CH2-Si(OC2H5)3Bonding agent be added in ethanol water, by solution plus
Enter into the container equipped with boron carbide powder, sonic oscillation processing, in 80 DEG C of back flow reaction 3h, after the reaction was completed by filtering,
Washing is dried, the boron carbide after being bonded；The dosage of the bonding agent is the 10% of boron carbide powder quality；
Modifying agent W is added in the boron carbide after bonding by S2, is fully ground, in 60 DEG C of reaction 30min, is obtained carbon modified
Change boron；The dosage of the modifying agent W is the 5% of boron carbide powder quality；The structural formula of the modifying agent W are as follows:
Preferably, the corrosive agent is one of formic acid, trichloroacetic acid, dichloroacetic acid.
Preferably, the oxidant is one of potassium acid sulfate, ammonium periodate, ammonium perchlorate.
Preferably, the promotor is one of ferrous sulfate, cobalt nitrate, frerrous chloride.
Wherein, the specific preparation process that purifying silica solution of the present invention is is referring to patent document
CN101475180A。
Preferably, polishing condition used in the finishing polish processing is as follows: polish pressure: 400 grams/cm；
Workpiece rotational frequency: 80 revs/min；Lower disk rotating speed: 150 revs/min；Polish flow quantity: 60 ml/mins；Polishing time: 1 hour.
Technical solution of the present invention has as follows by beneficial effect:
(1) compared to single purifying silica solution is used, specified particle diameter, the purifying silica solution of special ratios and carbonization are used
Boron Compostie abrasive particles, which are more advantageous to, obtains small, the more smooth gallium nitride wafer of surface roughness, the purifying silica solution of different-grain diameter
It can make full use of electrostatic force with boron carbide Compostie abrasive particles, collaboration improves polishing effect, makes up the deficiency of two kinds of abrasive grains, make
In polishing process will not insert material surface the effect in similar " arable land " occurs, it is low to be more advantageous to petition of surrender surface roughness.
(2) compared to unmodified boron carbide, it is more advantageous to that obtain surface roughness small, more using the boron carbide being modified
For smooth gallium nitride wafer；Boron carbide is handled by modifier modification, is on the one hand formed buffer function during the polishing process, is subtracted
Small impression reduces the purpose of surface roughness to reach reduction mechanical damage；On the other hand, surface group abundant in modifying agent
It can preferably be reacted with chip, to accelerate mass transfer, improve polishing effect.
(3) compared to general bonding agent and general modifying agent is used, H is used2N-CH2CH2CH2-Si(OC2H5)3Make
To use modifying agent W that can make full use of as modifying agent the group effect between bonding agent and modifying agent while bonding agent
(the two is indispensable) is more advantageous to raising modified effect, and then it is brilliant to obtain the gallium nitride that surface roughness is small, more smooth
Piece.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to embodiments and comparative example,
The present invention will be described in further detail.
Embodiment 1
A kind of 5G communicates crucial radio frequency chip material, the preparation process of the radio frequency chip material include the following steps: by
Gallium nitride wafer carries out finishing polish processing, to gallium nitride wafer after finishing polish after preliminary cutting, grinding, milled processed
Surface carries out cleaning agent washing, then dries to get radio frequency chip material.
Wherein, precise polishing solution used in the finishing polish processing includes following weight percentage components: 20wt%
Mix abrasive grain, 0.4wt% corrosive agent, 0.3wt% oxidant, 0.001wt% promotor, water surplus；
Wherein, the mixing abrasive grain is made of in mass ratio for 1:1 purifying silica solution and modified boron carbide；The purifying silicon
The particle size range of colloidal sol is 60~90nm；The particle size range of the modified boron carbide is 100~130nm.
Wherein, the preparation process of the modified boron carbide includes the following steps:
Structural formula is H by S12N-CH2CH2CH2-Si(OC2H5)3Bonding agent be added in ethanol water, by solution plus
Enter into the container equipped with boron carbide powder, sonic oscillation processing, in 80 DEG C of back flow reaction 3h, after the reaction was completed by filtering,
Washing is dried, the boron carbide after being bonded；The dosage of the bonding agent is the 10% of boron carbide powder quality；
Modifying agent W is added in the boron carbide after bonding by S2, is fully ground, in 60 DEG C of reaction 30min, is obtained carbon modified
Change boron；The dosage of the modifying agent W is the 5% of boron carbide powder quality；The structural formula of the modifying agent W are as follows:
Wherein, the corrosive agent is formic acid, and the oxidant is potassium acid sulfate, and the promotor is ferrous sulfate.
Wherein, polishing condition used in finishing polish processing is as follows: polish pressure: 400 grams/cm；Workpiece turns
Speed: 80 revs/min；Lower disk rotating speed: 150 revs/min；Polish flow quantity: 60 ml/mins；Polishing time: 1 hour.
Embodiment 2
A kind of 5G communicates crucial radio frequency chip material, the preparation process of the radio frequency chip material include the following steps: by
Gallium nitride wafer carries out finishing polish processing, to gallium nitride wafer after finishing polish after preliminary cutting, grinding, milled processed
Surface carries out cleaning agent washing, then dries to get radio frequency chip material.
Wherein, precise polishing solution used in the finishing polish processing includes following weight percentage components: 25wt%
Mix abrasive grain, 0.6wt% corrosive agent, 0.5wt% oxidant, 0.005wt% promotor, water surplus；
Wherein, the mixing abrasive grain is made of in mass ratio for 1:1 purifying silica solution and modified boron carbide；The purifying silicon
The particle size range of colloidal sol is 60~90nm；The particle size range of the modified boron carbide is 100~130nm.
Wherein, the preparation process of the modified boron carbide includes the following steps:
Structural formula is H by S12N-CH2CH2CH2-Si(OC2H5)3Bonding agent be added in ethanol water, by solution plus
Enter into the container equipped with boron carbide powder, sonic oscillation processing, in 80 DEG C of back flow reaction 3h, after the reaction was completed by filtering,
Washing is dried, the boron carbide after being bonded；The dosage of the bonding agent is the 10% of boron carbide powder quality；
Modifying agent W is added in the boron carbide after bonding by S2, is fully ground, in 60 DEG C of reaction 30min, is obtained carbon modified
Change boron；The dosage of the modifying agent W is the 5% of boron carbide powder quality；The structural formula of the modifying agent W are as follows:
Wherein, the corrosive agent is trichloroacetic acid, and the oxidant is ammonium periodate, and the promotor is cobalt nitrate.
Wherein, polishing condition used in finishing polish processing is as follows: polish pressure: 400 grams/cm；Workpiece turns
Speed: 80 revs/min；Lower disk rotating speed: 150 revs/min；Polish flow quantity: 60 ml/mins；Polishing time: 1 hour.
Embodiment 3
A kind of 5G communicates crucial radio frequency chip material, the preparation process of the radio frequency chip material include the following steps: by
Gallium nitride wafer carries out finishing polish processing, to gallium nitride wafer after finishing polish after preliminary cutting, grinding, milled processed
Surface carries out cleaning agent washing, then dries to get radio frequency chip material.
Wherein, precise polishing solution used in the finishing polish processing includes following weight percentage components: 30wt%
Mix abrasive grain, 0.8wt% corrosive agent, 0.7wt% oxidant, 0.01wt% promotor, water surplus；
Wherein, the mixing abrasive grain is made of in mass ratio for 1:1 purifying silica solution and modified boron carbide；The purifying silicon
The particle size range of colloidal sol is 60~90nm；The particle size range of the modified boron carbide is 100~130nm.
Wherein, the preparation process of the modified boron carbide includes the following steps:
Structural formula is H by S12N-CH2CH2CH2-Si(OC2H5)3Bonding agent be added in ethanol water, by solution plus
Enter into the container equipped with boron carbide powder, sonic oscillation processing, in 80 DEG C of back flow reaction 3h, after the reaction was completed by filtering,
Washing is dried, the boron carbide after being bonded；The dosage of the bonding agent is the 10% of boron carbide powder quality；
Modifying agent W is added in the boron carbide after bonding by S2, is fully ground, in 60 DEG C of reaction 30min, is obtained carbon modified
Change boron；The dosage of the modifying agent W is the 5% of boron carbide powder quality；The structural formula of the modifying agent W are as follows:
Wherein, the corrosive agent is dichloroacetic acid, and the oxidant is ammonium perchlorate, and the promotor is frerrous chloride
In.
Wherein, polishing condition used in finishing polish processing is as follows: polish pressure: 400 grams/cm；Workpiece turns
Speed: 80 revs/min；Lower disk rotating speed: 150 revs/min；Polish flow quantity: 60 ml/mins；Polishing time: 1 hour.
Comparative example 1
A kind of 5G communicates crucial radio frequency chip material, the preparation process of the radio frequency chip material include the following steps: by
Gallium nitride wafer carries out finishing polish processing, to gallium nitride wafer after finishing polish after preliminary cutting, grinding, milled processed
Surface carries out cleaning agent washing, then dries to get radio frequency chip material.
Wherein, precise polishing solution used in the finishing polish processing includes following weight percentage components: 25wt%
Single abrasive grain, 0.6wt% corrosive agent, 0.5wt% oxidant, 0.005wt% promotor, water surplus；
Wherein, the single abrasive grain is made of purifying silica solution；The particle size range of the purifying silica solution is 60~90nm；
Wherein, the corrosive agent is trichloroacetic acid, and the oxidant is ammonium periodate, and the promotor is cobalt nitrate.
Wherein, polishing condition used in finishing polish processing is as follows: polish pressure: 400 grams/cm；Workpiece turns
Speed: 80 revs/min；Lower disk rotating speed: 150 revs/min；Polish flow quantity: 60 ml/mins；Polishing time: 1 hour.
Comparative example 2
A kind of 5G communicates crucial radio frequency chip material, the preparation process of the radio frequency chip material include the following steps: by
Gallium nitride wafer carries out finishing polish processing, to gallium nitride wafer after finishing polish after preliminary cutting, grinding, milled processed
Surface carries out cleaning agent washing, then dries to get radio frequency chip material.
Wherein, precise polishing solution used in the finishing polish processing includes following weight percentage components: 25wt%
Mix abrasive grain, 0.6wt% corrosive agent, 0.5wt% oxidant, 0.005wt% promotor, water surplus；
Wherein, the mixing abrasive grain is made of in mass ratio for 1:1 purifying silica solution and unmodified boron carbide；The purifying
The particle size range of silica solution is 60~90nm；The particle size range of the unmodified boron carbide is 100~130nm.
Wherein, the corrosive agent is trichloroacetic acid, and the oxidant is ammonium periodate, and the promotor is cobalt nitrate.
Wherein, polishing condition used in finishing polish processing is as follows: polish pressure: 400 grams/cm；Workpiece turns
Speed: 80 revs/min；Lower disk rotating speed: 150 revs/min；Polish flow quantity: 60 ml/mins；Polishing time: 1 hour.
Comparative example 3
A kind of 5G communicates crucial radio frequency chip material, the preparation process of the radio frequency chip material include the following steps: by
Gallium nitride wafer carries out finishing polish processing, to gallium nitride wafer after finishing polish after preliminary cutting, grinding, milled processed
Surface carries out cleaning agent washing, then dries to get radio frequency chip material.
Wherein, precise polishing solution used in the finishing polish processing includes following weight percentage components: 25wt%
Mix abrasive grain, 0.6wt% corrosive agent, 0.5wt% oxidant, 0.005wt% promotor, water surplus；
Wherein, the mixing abrasive grain is made of in mass ratio for 1:1 purifying silica solution and modified boron carbide；The purifying silicon
The particle size range of colloidal sol is 60~90nm；The particle size range of the modified boron carbide is 100~130nm.
Wherein, the preparation process of the modified boron carbide includes the following steps:
Bonding agent Y is added in ethanol water by S1, and solution is added in the container equipped with boron carbide powder, ultrasound
Oscillation treatment is filtered, washed after the reaction was completed, is dried in 80 DEG C of back flow reaction 3h, the carbonization after being bonded
Boron；The dosage of the bonding agent is the 10% of boron carbide powder quality；
The structural formula of the bonding agent Y are as follows:
Modifying agent W is added in the boron carbide after bonding by S2, is fully ground, in 60 DEG C of reaction 30min, is obtained carbon modified
Change boron；The dosage of the modifying agent W is the 5% of boron carbide powder quality；The structural formula of the modifying agent W are as follows:
Wherein, the corrosive agent is trichloroacetic acid, and the oxidant is ammonium periodate, and the promotor is cobalt nitrate.
Wherein, polishing condition used in finishing polish processing is as follows: polish pressure: 400 grams/cm；Workpiece turns
Speed: 80 revs/min；Lower disk rotating speed: 150 revs/min；Polish flow quantity: 60 ml/mins；Polishing time: 1 hour.
Comparative example 4
A kind of 5G communicates crucial radio frequency chip material, the preparation process of the radio frequency chip material include the following steps: by
Gallium nitride wafer carries out finishing polish processing, to gallium nitride wafer after finishing polish after preliminary cutting, grinding, milled processed
Surface carries out cleaning agent washing, then dries to get radio frequency chip material.
Wherein, precise polishing solution used in the finishing polish processing includes following weight percentage components: 25wt%
Mix abrasive grain, 0.6wt% corrosive agent, 0.5wt% oxidant, 0.005wt% promotor, water surplus；
Wherein, the mixing abrasive grain is made of in mass ratio for 1:1 purifying silica solution and modified boron carbide；The purifying silicon
The particle size range of colloidal sol is 60~90nm；The particle size range of the modified boron carbide is 100~130nm.
Wherein, the preparation process of the modified boron carbide includes the following steps:
Structural formula is H by S12N-CH2CH2CH2-Si(OC2H5)3Bonding agent be added in ethanol water, by solution plus
Enter into the container equipped with boron carbide powder, sonic oscillation processing, in 80 DEG C of back flow reaction 3h, after the reaction was completed by filtering,
Washing is dried, the boron carbide after being bonded；The dosage of the bonding agent is the 10% of boron carbide powder quality；
Modifying agent is added in the boron carbide after bonding by S2, is fully ground, in 60 DEG C of reaction 30min, is obtained carbon modified
Change boron；The dosage of the modifying agent is the 5% of boron carbide powder quality；The modifying agent is γ-glycidoxypropyl group front three
Oxysilane.
Wherein, the corrosive agent is trichloroacetic acid, and the oxidant is ammonium periodate, and the promotor is cobalt nitrate.
Wherein, polishing condition used in finishing polish processing is as follows: polish pressure: 400 grams/cm；Workpiece turns
Speed: 80 revs/min；Lower disk rotating speed: 150 revs/min；Polish flow quantity: 60 ml/mins；Polishing time: 1 hour.
For more accurate expression inventive concept of the invention, by abrasive grain, key in embodiment 1-3 and comparative example 1-4
The variation of mixture and modifying agent is listed in Table 1 below.
Table 1
Characterization result: carrying out surface quality detection after polishing, uses atomic force microscope observation surface topography and computational chart
Surface roughness (Ra), probe radius are 10nm, vertical resolution 0.01nm, scan frequency 1.5Hz, scanning range 1 × 1
μm2.As a result as follows:
Table 2
| Number | Surface roughness (nm) |
| Embodiment 2 | 0.0479 |
| Comparative example 1 | 0.0578 |
| Comparative example 2 | 0.0544 |
| Comparative example 3 | 0.0525 |
| Comparative example 4 | 0.0502 |
The above results show (1) compared to using single purifying silica solution, using specified particle diameter, special ratios it is pure
Compostie abrasive particles as SiClx colloidal sol and boron carbide, which are more advantageous to, obtains small, the more smooth gallium nitride wafer of surface roughness,
Compostie abrasive particles as the purifying silica solution and boron carbide of different-grain diameter are conducive to using electrostatic force, and collaboration improves polishing effect
Fruit makes up the deficiency of two kinds of abrasive grains so that in polishing process will not insert material surface the effect in similar " arable land " occurs, more have
It is low conducive to petition of surrender surface roughness；(2) it compared to unmodified boron carbide, is more advantageous to using the boron carbide being modified and obtains surface
Small, the more smooth gallium nitride wafer of roughness；Boron carbide is handled by modifier modification, is on the one hand formed during the polishing process
Buffer function reduces impression to reach reduction mechanical damage, reduces the purpose of surface roughness；On the other hand, table in modifying agent
Face group abundant can preferably be reacted with chip, to accelerate mass transfer, improve polishing effect；(3) general compared to using
Bonding agent and general modifying agent, use H2N-CH2CH2CH2-Si(OC2H5)3Modifying agent W is used while as bonding agent
The group effect between bonding agent and modifying agent can be made full use of as modifying agent, is more advantageous to raising modified effect, in turn
Obtain small, the more smooth gallium nitride wafer of surface roughness；From the point of view of comparative example 3 and comparative example 4, H2N-CH2CH2CH2-
Si(OC2H5)3Belong to an entirety with modifying agent W, the two is indispensable.
Claims (7)
1. a kind of 5G communicates crucial radio frequency chip material, which is characterized in that the preparation process of the radio frequency chip material includes such as
Lower step: by gallium nitride wafer after preliminary cutting, grinding, milled processed, finishing polish processing is carried out, to nitrogen after finishing polish
Change gallium wafer surface and carry out cleaning agent washing, then dries to get radio frequency chip material.
2. 5G as described in claim 1 communicates crucial radio frequency chip material, which is characterized in that made in the finishing polish processing
Precise polishing solution includes following weight percentage components: 20~30wt% mixing abrasive grain, 0.4~0.8wt% corrosive agent,
0.3~0.7wt% oxidant, 0.001~0.01wt% promotor, water surplus；
The mixing abrasive grain is made of in mass ratio for 1:1 purifying silica solution and modified boron carbide；
The particle size range of the purifying silica solution is 60~90nm；
The particle size range of the modified boron carbide is 100~130nm.
3. 5G as claimed in claim 2 communicates crucial radio frequency chip material, which is characterized in that the preparation of the modified boron carbide
Technique includes the following steps:
Structural formula is H by S12N-CH2CH2CH2-Si(OC2H5)3Bonding agent be added in ethanol water, solution is added to
In container equipped with boron carbide powder, sonic oscillation processing in 80 DEG C of back flow reaction 3h, is filtered, washed after the reaction was completed, is done
Dry processing, the boron carbide after being bonded；The dosage of the bonding agent is the 10% of boron carbide powder quality；
Modifying agent W is added in the boron carbide after bonding by S2, is fully ground, and in 60 DEG C of reaction 30min, obtains modified carbonization
Boron；The dosage of the modifying agent W is the 5% of boron carbide powder quality；The structural formula of the modifying agent W are as follows:
4. 5G as claimed in claim 2 communicates crucial radio frequency chip material, which is characterized in that the corrosive agent is formic acid, three
One of monoxone, dichloroacetic acid.
5. 5G as claimed in claim 2 communicates crucial radio frequency chip material, which is characterized in that the oxidant is hydrogen sulfate
One of potassium, ammonium periodate, ammonium perchlorate.
6. 5G as claimed in claim 2 communicates crucial radio frequency chip material, which is characterized in that the promotor is that sulfuric acid is sub-
One of iron, cobalt nitrate, frerrous chloride.
7. 5G as claimed in claim 2 communicates crucial radio frequency chip material, which is characterized in that made in the finishing polish processing
Polishing condition is as follows: polish pressure: 400 grams/cm；Workpiece rotational frequency: 80 revs/min；Lower disk rotating speed: 150 revs/min
Clock；Polish flow quantity: 60 ml/mins；Polishing time: 1 hour.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101475180A (en) * | 2009-01-16 | 2009-07-08 | 清华大学 | Purification method of ultra-pure silicon dioxide sol |
| CN103506928A (en) * | 2012-06-19 | 2014-01-15 | 上海硅酸盐研究所中试基地 | Super-hard semiconductor material polishing method |
| JP2015147922A (en) * | 2014-11-26 | 2015-08-20 | アサヒ化成工業株式会社 | Composite abrasive grain, method for manufacturing the same, polishing method and polishing device |
| CN105524558A (en) * | 2016-01-25 | 2016-04-27 | 河南省联合磨料磨具有限公司 | Polishing solution additive and preparation method thereof |
| CN106398544A (en) * | 2016-07-27 | 2017-02-15 | 清华大学 | A CMP polishing composition suitable for a gallium nitride material |
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2019
- 2019-07-29 CN CN201910687251.4A patent/CN110400742B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101475180A (en) * | 2009-01-16 | 2009-07-08 | 清华大学 | Purification method of ultra-pure silicon dioxide sol |
| CN103506928A (en) * | 2012-06-19 | 2014-01-15 | 上海硅酸盐研究所中试基地 | Super-hard semiconductor material polishing method |
| JP2015147922A (en) * | 2014-11-26 | 2015-08-20 | アサヒ化成工業株式会社 | Composite abrasive grain, method for manufacturing the same, polishing method and polishing device |
| CN105524558A (en) * | 2016-01-25 | 2016-04-27 | 河南省联合磨料磨具有限公司 | Polishing solution additive and preparation method thereof |
| CN106398544A (en) * | 2016-07-27 | 2017-02-15 | 清华大学 | A CMP polishing composition suitable for a gallium nitride material |
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