CN111939935A - SnS2Quantum dot/Si binary nano array photoelectric catalyst and preparation method thereof - Google Patents

SnS2Quantum dot/Si binary nano array photoelectric catalyst and preparation method thereof Download PDF

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CN111939935A
CN111939935A CN202010829411.7A CN202010829411A CN111939935A CN 111939935 A CN111939935 A CN 111939935A CN 202010829411 A CN202010829411 A CN 202010829411A CN 111939935 A CN111939935 A CN 111939935A
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吴玉程
王博
吕珺
徐光青
舒霞
汪冬梅
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Hefei University of Technology
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Abstract

The invention discloses a SnS2The quantum dot/Si binary nano array photoelectric catalyst selects silicon as a light absorption substrate and can absorb sunlight spectrum in a wider range, and the silicon nano array with the nano array prepared by a chemical etching method has a black surface, so that the reflection probability of incident light can be increased, and the reflection probability of the incident light can be increasedStrong silicon substrate light absorption efficiency; preparation of SnS by one-step hydrothermal method2Nano material, SnS fractured by ultrasonic freezing circulation2Van der waals force between layers to obtain SnS2The quantum dots can expose more edge active sites, and are more beneficial to the hydrogen evolution reaction; SnS by annealing after spin coating2The quantum dots are loaded on the surface of the silicon nano array to form an effective binary heterojunction structure serving as a photocathode, and the synergistic effect of the quantum dots and the silicon nano array can obviously improve the sunlight absorption efficiency, promote the separation efficiency of carriers, reduce the recombination probability and ensure the efficient and stable operation of the photoelectrocatalysis reaction.

Description

SnS2Quantum dot/Si binary nano array photoelectric catalyst and preparation method thereof
Technical Field
The invention relates to the technical field of preparation of nano materials and photoelectrocatalysis hydrogen production, in particular to SnS2A quantum dot/Si binary nano array photoelectric catalyst and a preparation method thereof.
Background
The semiconductor photoelectrocatalysis hydrogen evolution technology can combine the advantages of electrocatalysis and photocatalysis, and has wide development prospect. The prior semiconductor photoelectrocatalysis technology has three problems to be solved: firstly, the light absorption efficiency of the semiconductor is low; secondly, the photon-generated carriers are easy to compound, and the utilization rate of the photon-generated carriers is low; thirdly, the hydrogen evolution overpotential of the semiconductor photoelectric catalyst is high, and the active sites of the catalyst are limited.
Silicon is used as the second element of the reserves on the earth, has wide sources, has narrow band gap (about 1.12eV), and can absorb solar energy spectrums in a wider range compared with other semiconductor materials, so that the silicon-based material has wide application prospect in the field of photoelectrocatalysis. Generally speaking, loading an effective hydrogen evolution promoter on the surface of a semiconductor is an effective way to reduce the overpotential of photoelectrocatalytic hydrogen evolution and improve the efficiency of photoelectrocatalytic hydrogen evolution. Researches show that the traditional noble metal catalysts such as Pt, Au, Pd and the like can obviously reduce hydrogen evolution overpotential and improve photoelectrocatalysis hydrogen evolution efficiency, but the application of the catalysts in the field of photoelectrocatalysis hydrogen evolution is severely limited due to higher cost. Therefore, the research and development of a photoelectric catalyst and a preparation method thereof are urgently needed to reduce the production cost, improve the sunlight absorption efficiency, promote the carrier separation efficiency and reduce the recombination probability.
Disclosure of Invention
The invention aims to: provide a SnS2A quantum dot/Si binary nano array photoelectric catalyst and a preparation method thereof are provided to solve the above defects.
In order to achieve the above purpose, the invention provides the following technical scheme:
SnS2Quantum dot/Si binary nano array photoelectric catalyst, in the photoelectric catalyst SnS2The quantum dots are distributed on the surface of the Si nanowire array.
Preferably, an SnS2The preparation method of the quantum dot/Si binary nano-array photoelectric catalyst adopts a metal-assisted chemical etching method to prepare a silicon nano-wire array and adopts a hydrothermal method and a freezing ultrasonic treatment method to prepare SnS2Quantum dot solution, and SnS is realized by spin coating process2The quantum dots are loaded on the surface of the silicon nanowire array, so that SnS is prepared2Quantum dot/Si binary nano array photoelectric catalyst.
Preferably, an SnS2The preparation method of the quantum dot/Si binary nano array photoelectric catalyst specifically comprises the following steps:
s1, preparation of the silicon nanowire array: preparing a silicon nanowire array for later use by adopting a metal-assisted chemical etching method;
S2、SnS2preparation of quantum dot solution: SnS is prepared by a one-step hydrothermal method2Nano material, drying the SnS2Dissolving the powder in a certain amount of N-methyl pyrrolidone, performing ultrasonic treatment for a certain time, then performing freezing treatment in liquid nitrogen, and performing ultrasonic and freezing treatment for multiple times in a circulating manner to obtain SnS2A quantum dot solution;
S3、SnS2payload of quantum dots: adding a certain amount of SnS2The quantum dot solution is deposited on the surface of the silicon nanowire array through a spin coating process, drying treatment is carried out in an inert atmosphere, then the binding force between two phases is improved through an annealing process, and the SnS is realized2Quantum dot in siliconPayload on a metric array, thereby producing SnS2Quantum dot/Si binary nano array photoelectric catalyst.
Preferably, in step S2, the hydrothermal conditions of the hydrothermal method are: the hydrothermal temperature is 180 ℃ and the hydrothermal time is 12 hours.
Preferably, in step S2, the SnS is performed before the ultrasonic freezing2The mass fraction of the proportioned original solution is 3 mg/mL; after ultrasonic freeze drying and centrifugation, SnS2The mass fraction of the mixture ratio is 0.5 mg/mL.
Preferably, in step S3, the spin coating process specifically includes: spin coated SnS2The volume of the quantum dot solution is 25-125 mu L, and the rotating speed is 500 r/min during spin coating; the annealing process specifically comprises the following steps: the annealing temperature is 180 ℃, the annealing time is 3h, and the annealing atmosphere is N2。
The invention has the beneficial effects that:
the invention relates to a SnS2Compared with other semiconductor substrates with wide forbidden bands, the quantum dot/Si binary nano array photoelectric catalyst and the preparation method thereof have the advantages that the forbidden band width of silicon is only 1.12eV, so that the silicon is selected as a light absorption substrate and can absorb a wider range of sunlight spectrum, the list surface of the silicon nano linear array with the nano array prepared by a chemical etching method is black, the reflection probability of incident light can be increased, and the light absorption efficiency of the silicon substrate is enhanced; SnS is prepared by a one-step hydrothermal method2Nano material, SnS fractured by ultrasonic freezing circulation2Van der waals force between layers to obtain SnS2Compared with other bulk catalyst materials, the quantum dots can expose more edge active sites, and are more beneficial to the hydrogen evolution reaction. Finally SnS is annealed after simple spin coating2The quantum dots are loaded on the surface of the silicon nano array to form an effective binary heterojunction structure serving as a photocathode, and the synergistic effect of the quantum dots and the silicon nano array can obviously improve the sunlight absorption efficiency, promote the separation efficiency of carriers, reduce the recombination probability and ensure the efficient and stable operation of the photoelectrocatalysis reaction.
Drawings
FIG. 1: SnS prepared by one-step hydrothermal method2Scanning electron microscope images of the nano materials;
FIG. 2: for SnS after ultrasonic freezing treatment2Quantum dot low power transmission diagram;
FIG. 3: is SnS2A quantum dot/Si composite sample polarization curve performance test map;
FIG. 4: is SnS2Testing spectrum of impedance performance of quantum dot/Si composite sample;
Detailed Description
The present invention is further described with reference to the following examples, which are intended to be illustrative and illustrative only, and various modifications, additions and substitutions for the specific embodiments described herein may be made by those skilled in the art without departing from the spirit of the invention or exceeding the scope of the claims.
Example 1:
SnS2The preparation method of the quantum dot/Si binary nano array photoelectric catalyst specifically comprises the following steps:
s1, preparation of the silicon nanowire array:
placing the etched silicon wafer in 5 percent (mass fraction) of hydrofluoric acid solution for standing for 3min by adopting a metal-assisted chemical etching method, taking out the silicon wafer, repeatedly washing the silicon wafer with a large amount of deionized water, and naturally drying the silicon wafer in a nitrogen atmosphere to prepare the silicon nanowire array for later use.
S2、SnS2Preparation of quantum dot solution:
adding 701.2mg SnCl4·H2O，300.52mg CH3CSNH2，40mL H2Stirring and mixing O for 2h, transferring the mixture into a high-pressure reaction kettle, performing hydrothermal reaction for 12h at 180 ℃ by a one-step hydrothermal method, performing high-speed centrifugal treatment, collecting bottom precipitates, performing deionized water cleaning and alcohol cleaning for 3 times, drying in a vacuum drying oven, collecting SnS2Powder;
then the dried SnS2The powder is dissolved in N-methyl pyrrolidone solution to prepare 3mg/mL SnS2Carrying out ultrasonic treatment on the solution for a certain time, then carrying out freezing treatment in liquid nitrogen, wherein the ultrasonic treatment and the freezing treatment are carried out for multiple times in a circulating manner, the ultrasonic treatment and the freezing treatment are both carried out for 3 hours, and finally separating quantum dot particles from large particles at the bottom by a high-speed centrifuge to finally obtain 0.5mg/mL SnS2A quantum dot solution.
S3、SnS2Payload of quantum dots:
25 mu L of SnS by a spin coating process2The quantum dot solution is deposited on the surface of the silicon nano array in a spin coating mode, the rotating speed is 500 revolutions per minute during the spin coating, the silicon nano array is naturally dried in a nitrogen atmosphere, and then the silicon nano array is placed in a quartz tube of a tube furnace to be annealed for 3 hours at 180 degrees in the nitrogen atmosphere so as to improve SnS2The binding force of the quantum dots on the surface of the silicon nano array realizes SnS2Effective load of quantum dots on silicon nanowire array, thereby obtaining SnS2Quantum dot/Si binary nano array photoelectric catalyst.
After testing, the SnS prepared according to the steps2The quantum dot modified silicon nano array is irradiated by a xenon lamp (filter: AM 1.5G, light intensity: 100 mW/cm)2) Up to-5 mA/cm2The overpotential at time was-0.327V and the fitted resistance Rct was 793 Ω.
Example 2:
this example was prepared in the same manner as example 1, except that the volume of the spin-coating solution in step S3 was 50. mu.L.
After testing, the SnS prepared according to the steps2The overpotential of the quantum dot modified silicon nano-array is-0.305V when the xenon lamp irradiates (a filter plate: AM 1.5G, light intensity: 100mW/cm2) to reach-5 mA/cm2, and the fitting impedance value Rct is 347.3 omega.
Example 3:
this example was prepared in the same manner as example 1, except that the volume of the spin-coating solution in step S3 was 75. mu.L.
After testing, the SnS prepared according to the steps2The quantum dot modified silicon nano array is irradiated by a xenon lamp (filter: AM 1.5G, light intensity: 100 mW/cm)2) Up to-5 mA/cm2Over current of timeThe bit is-0.257V and the fitted impedance value Rct is 418.5 Ω.
Example 4:
this example was prepared in the same manner as example 1 except that the volume of the spin-coating solution in step S3 was 100. mu.L.
After testing, the SnS prepared according to the steps2The quantum dot modified silicon nano array is irradiated by a xenon lamp (filter: AM 1.5G, light intensity: 100 mW/cm)2) Up to-5 mA/cm2The overpotential at this time was-0.416V, and the fitted resistance value Rct was 1269 Ω.
Example 5:
this example was prepared in the same manner as example 1, except that the volume of the spin-coating solution in step S3 was 125. mu.L.
After testing, the SnS prepared according to the steps2The quantum dot modified silicon nano array is irradiated by a xenon lamp (filter: AM 1.5G, light intensity: 100 mW/cm)2) Up to-5 mA/cm2The overpotential at this time was-0.405V and the fitted resistance Rct was 2094 Ω.
Combining examples 1-5, different volumes of SnS were obtained2SnS spin-coated under quantum dot solution2The overvoltage data and impedance spectrum fitting data of the quantum dot/Si composite sample are shown in the following table 1:
table 1: SnS2Over-current data and impedance spectrum fitting data of quantum dot/Si composite sample
Figure BDA0002637380190000071
As can be seen from table 1: loaded SnS2The composite sample after the catalyst can obviously reduce hydrogen evolution overpotential (the current density reaches-5 mA/cm)2Overpotential of time), the carrier transport resistance (Rct) is reduced. Wherein the minimum overpotential is-0.257V and the impedance value is 418.5 omega when the 75uL quantum dot catalyst is loaded. As the loading increases, agglomeration of the quantum dot catalyst results and thus affects exposure of the active sites of the catalyst. Finally, the catalytic activity is reduced, which is shown by the increase of hydrogen evolution overpotential and impedance value.
Taking example 1 as an example, the following is briefly described:
as shown in FIG. 1, FIG. 1 shows SnS prepared by one-step hydrothermal method in example 12The scanning electron microscope image of the nano material can be seen from fig. 1: from the figure, SnS prepared by a hydrothermal method can be observed2The nano materials are not uniform in size distribution and are mostly distributed in a block shape.
As shown in FIG. 2, FIG. 2 shows SnS after the ultrasonic freezing treatment in example 12The low power transmission diagram of quantum dots is shown in fig. 2: from the figure, SnS can be observed after multiple cycles of ultrasonic process and freezing process in liquid nitrogen2The quantum dots are uniformly distributed in size, and the size is within 5 nm.
As shown in FIG. 3, FIG. 3 shows SnS in example 12The polarization curve performance test map of the quantum dot/Si composite sample can be known from FIG. 3: loaded SnS2The initial potential of the photocurrent of the composite sample after the catalyst is obviously shifted positively, which shows that SnS2The quantum dot catalyst can obviously reduce hydrogen evolution overpotential.
As shown in FIG. 4, FIG. 4 shows SnS in example 12The impedance performance test spectrum of the quantum dot/Si composite sample can be known from FIG. 4: loaded SnS2The curvature radius of the impedance spectrum curve of the composite sample after the catalyst is reduced relative to the original silicon sample without the catalyst, which shows that the SnS2The load of the quantum dot catalyst can promote the migration of photon-generated carriers, reduce the carrier transmission resistance and promote the photoelectrocatalysis hydrogen evolution reaction.
As can be seen from examples 1 to 5, an SnS of the present invention2The preparation method of the quantum dot/Si binary nanowire array photocatalyst is simple and convenient in steps. The invention relates to a SnS2Compared with other semiconductor substrates with wide forbidden bands, the preparation method of the quantum dot/Si binary nanowire array photoelectric catalyst has the advantages that the forbidden band width of silicon is only 1.12eV, so that the silicon is selected as a light absorption substrate and can absorb sunlight spectrum in a wider range, the surface of a silicon nanowire array with a nanowire array prepared by a chemical etching method is black, the reflection probability of incident light can be increased, and the light absorption efficiency of the silicon substrate is enhanced. SnS is prepared by a one-step hydrothermal method2Nano material, SnS fractured by ultrasonic freezing circulation2Van der waals force between layers to obtain SnS2Compared with other bulk catalyst materials, the quantum dots can expose more edge active sites, and are more beneficial to the hydrogen evolution reaction. Finally SnS is annealed after simple spin coating2The quantum dots are loaded on the surface of the silicon nano array to form an effective binary heterojunction structure serving as a photocathode, and the synergistic effect of the quantum dots and the silicon nano array can obviously improve the sunlight absorption efficiency, promote the separation efficiency of carriers, reduce the recombination probability and ensure the efficient and stable operation of the photoelectrocatalysis reaction.
The foregoing is an illustrative description of the invention, and it is clear that the specific implementation of the invention is not restricted to the above-described manner, but it is within the scope of the invention to apply the inventive concept and solution to other applications without substantial or direct modification.

Claims (6)

1. SnS2The quantum dot/Si binary nano array photoelectric catalyst is characterized in that in the photoelectric catalyst, SnS2The quantum dots are distributed on the surface of the Si nanowire array.
2. SnS2The preparation method of the quantum dot/Si binary nano-array photoelectric catalyst is characterized in that a metal-assisted chemical etching method is adopted to prepare a silicon nano-wire array, and a hydrothermal method and a freezing ultrasonic treatment method are adopted to prepare SnS2Quantum dot solution, and SnS is realized by spin coating process2The quantum dots are loaded on the surface of the silicon nanowire array, so that SnS is prepared2Quantum dot/Si binary nano array photoelectric catalyst.
3. An SnS according to claim 22The preparation method of the quantum dot/Si binary nano array photoelectric catalyst is characterized by comprising the following steps:
s1, preparation of the silicon nanowire array: preparing a silicon nanowire array for later use by adopting a metal-assisted chemical etching method;
S2、SnS2preparation of quantum dot solution: SnS is prepared by a one-step hydrothermal method2Nano material, drying the SnS2Dissolving the powder in a certain amount of N-methyl pyrrolidone, performing ultrasonic treatment for a certain time, then performing freezing treatment in liquid nitrogen, and performing ultrasonic and freezing treatment for multiple times in a circulating manner to obtain SnS2A quantum dot solution;
S3、SnS2payload of quantum dots: adding a certain amount of SnS2The quantum dot solution is deposited on the surface of the silicon nanowire array through a spin coating process, drying treatment is carried out in an inert atmosphere, then the binding force between two phases is improved through an annealing process, and the SnS is realized2Effective load of quantum dots on silicon nanowire array, thereby obtaining SnS2Quantum dot/Si binary nano array photoelectric catalyst.
4. An SnS according to claim 32The preparation method of the quantum dot/Si binary nano-array photocatalyst is characterized in that in step S2, the hydrothermal conditions of the hydrothermal method are as follows: the hydrothermal temperature is 180 ℃ and the hydrothermal time is 12 hours.
5. An SnS according to claim 32The preparation method of the quantum dot/Si binary nano array photoelectric catalyst is characterized in that in the step S2, before ultrasonic freezing, SnS is adopted2The mass fraction of the proportioned original solution is 3 mg/mL; after ultrasonic freeze drying and centrifugation, SnS2The mass fraction of the mixture ratio is 0.5 mg/mL.
6. An SnS according to claim 32The preparation method of the quantum dot/Si binary nano-array photocatalyst is characterized in that in step S3, the spin coating process specifically comprises the following steps: spin coated SnS2The volume of the quantum dot solution is 25-125 mu L, and the rotating speed is 500 r/min during spin coating; the annealing process specifically comprises the following steps: the annealing temperature is 180 ℃, the annealing time is 3h, and the annealing atmosphere is N2。
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CN112951683A (en) * 2021-01-27 2021-06-11 中山德华芯片技术有限公司 Photoelectric cathode and preparation method and application thereof
CN113289610A (en) * 2021-03-18 2021-08-24 合肥工业大学 Bi2WO6/Si composite photoelectrocatalysis anode material and preparation method thereof
CN113087088A (en) * 2021-04-20 2021-07-09 合肥工业大学 Method for synchronously degrading pollutants in water through photoelectrocatalysis hydrogen evolution
CN113087088B (en) * 2021-04-20 2024-05-28 合肥工业大学 Method for synchronously degrading pollutants in water by photoelectrocatalysis hydrogen evolution

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