CN110386821B - Preparation method of nitrogen-rich manganese-silicon-based material - Google Patents
Preparation method of nitrogen-rich manganese-silicon-based material Download PDFInfo
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Abstract
The invention relates to the technical field of materials, in particular to a preparation method of a nitrogen-rich manganese-silicon-based material, which comprises the following chemical components in percentage by mass: 40-60% of Mn, 10-20% of C, 4-8% of Si, 15-25% of N and the balance of Fe, and the method comprises the following steps: a. crushing the manganese-silicon base material, and then grinding into fine powder with a certain particle size; b. pressing the fine powder obtained in the step a into balls; c. feeding the spherical manganese-silicon base material into a charging crucible of a heating nitriding furnace; d. the spherical manganese-silicon base material is nitrided in a heating nitriding furnace. The preparation method of the nitrogen-rich manganese-silicon-based material has high nitridation efficiency, the yield of the manganese-silicon-based base material N is high, the N can improve the tensile strength and the yield strength of the material, the strength of the manganese-silicon-based base material is obviously improved, the N is a cheap alloying element, the preparation cost is low, and the nitrogen-rich manganese-silicon-based material has good technical and economic indexes and comprehensive economic benefits.
Description
Technical Field
The invention relates to the technical field of materials, in particular to a preparation method of a nitrogen-rich manganese-silicon-based material.
Background
Manganese-silicon-based materials, which are made of Mn, C, Si, Fe, etc., are increasingly used in industry as an alloy, but there are places where the strength requirement for the material is high, and the current manganese-silicon-based materials cannot meet the strength requirement and cannot be used, thereby affecting the use of manganese-silicon-based materials.
Disclosure of Invention
The invention aims to solve the technical problem of providing a preparation method of a high-strength nitrogen-rich manganese-silicon-based material.
The technical scheme adopted by the invention for solving the technical problems is as follows: a preparation method of a nitrogen-rich manganese-silicon-based material comprises the following chemical components in percentage by mass: 40-60% of Mn content, 10-20% of C content, 4-8% of Si content, 15-25% of N content and the balance of Fe, and comprises the following steps:
a. crushing the manganese-silicon base material, and then grinding into fine powder with a certain particle size;
b. pressing the fine powder obtained in the step a into a spherical shape;
c. the method comprises the following steps of feeding spherical manganese-silicon base materials into a charging crucible of a heating nitriding furnace, wherein the heating nitriding furnace comprises a furnace body, a first track, a walking trolley, the charging crucible, a heating resistor and a temperature measuring device, the furnace body comprises a heating section, a heat preservation section and a cooling section which are connected together, a first push-pull type sealed door is arranged at the inlet end part of the heating section, a second push-pull type sealed door is arranged at the outlet end part of the cooling section, a plurality of nitrogen inlet pipes are arranged around the inlet end part of the heating section, a plurality of nitrogen outlet pipes are arranged around the outlet end part of the cooling section, and the first track, the walking trolley, the charging crucible, the heating resistor and the temperature measuring device are all arranged in the furnace body;
the travelling trolley is arranged on the first rail in a matching manner and can move along the first rail, the charging crucible is arranged in the travelling trolley, and the heating resistors are uniformly distributed on the side parts and the top parts of the heating section and the heat preservation section of the furnace body;
d. the spherical manganese-silicon base material is nitrided in a heating nitriding furnace, and the method specifically comprises the following steps: firstly, opening a first push-pull type airtight door, closing a second push-pull type airtight door, moving a walking trolley along a first track to enable the walking trolley to completely enter a heating section of a furnace body, then closing the first push-pull type airtight door, then nitrogen with pressure is introduced through the nitrogen inlet pipe to fill the furnace body with nitrogen, the heating resistor of the heating section is used for heating the spherical manganese-silicon base material to heat the spherical manganese-silicon base material to 950-, and (4) preserving the heat of the heat preservation section for 300-plus-310 min, then stopping the work of the heating resistor, moving the walking trolley to the cooling section of the furnace body along the first track until the temperature is reduced to the room temperature, and finally opening the second push-pull type sealed door to move the walking trolley to the outside of the furnace body so as to finish the nitridation of the spherical manganese-silicon base material.
Further, in the step a, the manganese-silicon base material comprises the following chemical components in percentage by mass: 55-65% of Mn, 15-25% of C, 5-10% of Si and the balance of Fe.
Further, in the step a, the size fraction of the fine powder is less than or equal to 200 meshes, and the size fraction less than 250 meshes is not less than 80% of the total.
Further, in the step b, the adhesive and the water are added in the process of pressing the fine powder into the spherical manganese-silicon base material, and the spherical manganese-silicon base material is aired after being pelletized, so that the water content in the spherical manganese-silicon base material is less than or equal to 0.5 percent.
Further, the adhesive is bentonite.
Further, in the step b, the cross-sectional diameter of the manganese-silicon base material pressed into the spherical shape is between 10 and 15 mm.
Further, the length of the furnace body is between 40 and 60 m.
Furthermore, the heating nitriding furnace also comprises a controller, and the heating resistor and the temperature measuring device are connected with the controller.
Furthermore, a walking power device is arranged on the walking trolley, the walking power device can enable the walking trolley to move along the first track, and the walking power device is connected with the controller.
Further, the furnace body further comprises a second rail, the second rail is located outside the furnace body and connected with the first rail, and the second rail and the first rail enclose a circle.
The invention has the beneficial effects that: firstly crushing a manganese-silicon base material, then grinding the crushed manganese-silicon base material into fine powder with a certain granularity, then pressing the fine powder into a spherical shape, finally sending the spherical manganese-silicon base material into a heating nitriding furnace for nitriding, heating the spherical manganese-silicon base material to 950-960 ℃, then preserving the heat for 310min, finally cooling to room temperature, and keeping the whole nitriding process in a nitrogen atmosphere, thereby obtaining the nitrogen-rich manganese-silicon base material; the preparation method of the nitrogen-rich manganese-silicon-based material has high nitriding efficiency, the yield of the manganese-silicon-based base material N is high, and the obtained nitrogen-rich manganese-silicon-based material has stable performance; the nitrogen-rich manganese-silicon-based material contains 15-25% of N, and the N can improve the tensile strength and yield strength of the material and remarkably increase the strength of the manganese-silicon-based base material; n is a cheap alloying element, has low preparation cost and better technical and economic indexes and comprehensive economic benefits.
Drawings
FIG. 1 is a schematic view of a heated nitriding furnace according to the present invention;
FIG. 2 is an enlarged view at A in FIG. 1;
the labels in the figure are: furnace body 1, first track 2, walking dolly 3, heating resistor 4, nitrogen gas advance pipe 5.
Detailed Description
The invention will be further described with reference to the accompanying drawings.
As shown in fig. 1 and 2, a method for preparing a nitrogen-rich manganese-silicon-based material comprises the following chemical components in percentage by mass: 40-60% of Mn content, 10-20% of C content, 4-8% of Si content, 15-25% of N content and the balance of Fe, and the melting point is 1210-1255 ℃, comprising the following steps:
a. crushing the manganese-silicon base material, and then grinding into fine powder with a certain particle size;
b. pressing the fine powder obtained in the step a into balls;
c. the method comprises the following steps of feeding spherical manganese-silicon base materials into a charging crucible of a heating nitriding furnace, wherein the heating nitriding furnace comprises a furnace body 1, a first track 2, a plurality of traveling trolleys 3, a plurality of charging crucibles, a heating resistor 4 and a temperature measuring device, the furnace body 1 comprises a heating section, a heat preservation section and a cooling section which are connected together, a first push-pull type sealed door is arranged at the inlet end part of the heating section, a second push-pull type sealed door is arranged at the outlet end part of the cooling section, a plurality of nitrogen inlet pipes 5 are arranged around the inlet end part of the heating section, a plurality of nitrogen outlet pipes are arranged around the outlet end part of the cooling section, and the first track 2, the traveling trolleys 3, the charging trolleys, the heating resistor 4 and the temperature measuring device are all arranged in the furnace body 1; the travelling trolley 3 is arranged on the first track 2 in a matching way, the travelling trolley 3 can move along the first track 2, the charging crucible is arranged in the travelling trolley 3, and the heating resistors 4 are uniformly distributed on the side parts and the top parts of the heating section and the heat preservation section of the furnace body 1;
d. the spherical manganese-silicon base material is nitrided in a heating nitriding furnace, and the method specifically comprises the following steps: firstly, opening a first push-pull type sealed door, closing a second push-pull type sealed door, moving a walking trolley 3 along a first track 2 to enable the walking trolley 3 to completely enter a heating section of a furnace body 1, then closing the first push-pull type sealed door to enable the furnace body 1 to form a relatively closed space, then introducing nitrogen with pressure through a nitrogen inlet pipe 5 to enable the furnace body 1 to be filled with the nitrogen, enabling the whole nitriding process to be in a nitrogen atmosphere, heating the spherical manganese-silicon base material by a heating resistor 4 of the heating section to work, heating the spherical manganese-silicon base material to 950-, and (3) cooling to room temperature, finally opening a second push-pull type sealed door, moving the walking trolley 3 to the outside of the furnace body 1, and discharging the residual nitrogen through a nitrogen outlet pipe, thereby completing the nitridation of the spherical manganese-silicon base material to obtain the nitrogen-rich manganese-silicon base material.
In the step a, the manganese-silicon base material comprises the following chemical components in percentage by mass: 55-65% of Mn, 15-25% of C, 5-10% of Si and the balance of Fe. After the manganese-silicon base material is crushed, grinding the manganese-silicon base material into fine powder with a certain granularity, wherein the granularity of the fine powder is preferably less than or equal to 200 meshes, and the granularity less than 250 meshes is not less than 80 percent of the total number.
The spherical manganese-silicon base material can be conveniently sent into a heating nitriding furnace for nitriding, nitrogen can flow in the heating nitriding furnace, nitriding of the manganese-silicon base material is facilitated, N can enter the manganese-silicon base material conveniently, and the section diameter of the spherical manganese-silicon base material is preferably 10-15 mm. A large number of tests and practices prove that the manganese-silicon base material is crushed and then ground into fine powder with a certain particle size, and then the fine powder is pressed into balls, so that the nitriding effect and the nitriding efficiency of the manganese-silicon base material can be improved. In order to facilitate the fine powder to be pressed into the spherical manganese-silicon base material, in the step b, the adhesive and the water are added in the process of pressing the fine powder into the spherical manganese-silicon base material, the spherical manganese-silicon base material is aired after being formed into balls, the water content in the spherical manganese-silicon base material is less than or equal to 0.5 percent, the adhesive can adopt bentonite, the amount of the added adhesive is 2-5 percent of the total weight, the amount of the added water is 2-4 percent of the total weight, and the pressing pressure is not more than 30 KN.
The spherical manganese-silicon base material is nitrided in the heating nitriding furnace, the heating nitriding furnace has simple structure, strong continuous nitriding production capacity and high nitriding efficiency, and the nitrogen yield can be stably controlled between 60 and 80 percent. Heating nitriding furnace heating section is arranged in heating the globular manganese silicon base material of the crucible of feeding, the heat preservation section is arranged in keeping warm to the globular manganese silicon base material of the crucible of feeding, the section of cooling is arranged in cooling the globular manganese silicon base material of the crucible of feeding, during the nitrogenize, globular manganese silicon base material loops through the heating section, the heat preservation section, the section of cooling, through obtaining in a large amount of practices and the experiment, furnace body 1's length is preferred between 40-60m, the heating section, the heat preservation section, the length of the section of cooling equals.
In order to realize the automatic operation of nitriding, the temperatures of the heating section, the heat preservation section and the cooling section are accurately controlled, and the nitriding effect is ensured, the heating nitriding furnace further comprises a controller, the heating resistor 4 and the temperature measuring device are connected with the controller through signal data lines, the heating section, the heat preservation section and the cooling section are respectively provided with the temperature measuring device, and the temperature measuring device is preferably an embedded thermocouple. In order to facilitate the moving of the walking trolley 3 on the first track 2, the walking trolley 3 is provided with a walking power device, the walking power device can enable the walking trolley 3 to move along the first track 2, the walking power device is connected with a controller through a signal data item, and the on-off of the walking power device is automatically controlled through the controller. In order to reduce the cost, the front end of the first walking trolley 3 can be connected with a zipper, the zipper penetrates through the second push-pull type airtight door, and the walking trolley 3 is pulled to move through the zipper; or the rear end of the last walking trolley 3 is connected with a push rod, the push rod penetrates through the first push-pull type airtight door, and the walking trolley 3 is pushed by the push rod to move.
In order to realize continuous production, the trolley 3 convenient to walk enters and exits the furnace body 1 and further comprises a second rail, the second rail is located outside the furnace body 1 and connected with the first rail 2, and the second rail and the first rail 2 are encircled to form a circle.
In summary, the preparation method of the nitrogen-rich manganese-silicon-based material provided by the invention comprises the steps of firstly crushing the manganese-silicon base material, then grinding the crushed manganese-silicon base material into fine powder with a certain particle size, then pressing the fine powder into a spherical shape, and finally sending the spherical manganese-silicon base material into a heating nitriding furnace for nitriding, wherein during nitriding, the spherical manganese-silicon base material is firstly heated to 950-; the preparation method of the nitrogen-rich manganese-silicon-based material has high nitriding efficiency, the yield of the manganese-silicon-based base material N is high, and the obtained nitrogen-rich manganese-silicon-based material has stable performance; the nitrogen-rich manganese-silicon-based material contains 15-25% of N, the N can improve the tensile strength and yield strength of the material and obviously increase the strength of the manganese-silicon-based base material, and through research and analysis on the nitrogen-rich manganese-silicon-based material, the nitrogen-rich manganese-silicon-based material after nitridation can increase the tensile strength and yield strength of about 120MPa of the nitrogen-rich manganese-silicon-based material every 1% compared with the manganese-silicon-based base material, the strength enhancement effect is good, the N is a cheap alloying element, the preparation cost is low, and the technical and economic indexes and the comprehensive economic benefits are good.
Example 1
The preparation method of the nitrogen-rich manganese-silicon-based material comprises the following steps:
a. after the manganese-silicon base material is crushed, grinding the manganese-silicon base material into fine powder with the grain size of not more than 200 meshes and the grain size of less than 250 meshes of not less than 80 percent of the total number, wherein the manganese-silicon base material comprises the following chemical components in percentage by mass: 61% of Mn, 20% of C, 7% of Si and the balance of Fe;
b. pressing the fine powder obtained in the step a into spheres, adding bentonite and water during pressing, and airing after the spheres are formed, so that the water content in the spherical manganese-silicon base material is less than or equal to 0.5 percent, and the section diameter of the spherical manganese-silicon base material is 12 mm;
c. feeding the spherical manganese-silicon base material into a charging crucible of a heating nitriding furnace;
d. the spherical manganese-silicon base material is nitrided in a heating nitriding furnace, and the method specifically comprises the following steps: firstly, opening a first push-pull type airtight door, closing a second push-pull type airtight door, moving a walking trolley 3 along a first track 2 to enable the walking trolley 3 to completely enter a heating section of a furnace body 1, then closing the first push-pull type airtight door, then introducing nitrogen with the pressure of 0.15MPa and the flow of 3ml/s through a nitrogen inlet pipe 5 to enable the furnace body 1 to be filled with the nitrogen, enabling the whole nitriding process to be in the nitrogen atmosphere, heating the spherical manganese-silicon base material by a heating resistor 4 of the heating section to heat the spherical manganese-silicon base material to 950 ℃, moving the walking trolley 3 along the first track 2 to a heat preservation section of the furnace body 1 after the spherical manganese-silicon base material is heated, preserving the heat for 300min at the heat preservation section, then stopping the heating resistor 4 to move the walking trolley 3 along the first track 2 to a cooling section of the furnace body 1 until the temperature is reduced to the room temperature, and finally, opening a second push-pull type sealed door, and moving the walking trolley 3 to the outside of the furnace body 1, thereby completing the nitridation of the spherical manganese-silicon base material.
Detecting the obtained nitrogen-rich manganese-silicon-based material, wherein the nitrogen-rich manganese-silicon-based material comprises the following chemical components in percentage by mass: 51.48% of Mn, 18% of C, 6.4% of Si, 16% of N and the balance of Fe.
Example 2
The preparation method of the nitrogen-rich manganese-silicon-based material comprises the following steps:
a. after the manganese-silicon base material is crushed, grinding the manganese-silicon base material into fine powder with the grain size of not more than 200 meshes and the grain size of less than 250 meshes of not less than 80 percent of the total number, wherein the manganese-silicon base material comprises the following chemical components in percentage by mass: 65% of Mn, 17% of C, 8% of Si and the balance of Fe;
b. pressing the fine powder obtained in the step a into spheres, adding bentonite and water during pressing, and airing after the spheres are formed, so that the water content in the spherical manganese-silicon base material is less than or equal to 0.5 percent, and the section diameter of the spherical manganese-silicon base material is 15 mm;
c. feeding the spherical manganese-silicon base material into a charging crucible of a heating nitriding furnace;
d. the spherical manganese-silicon base material is nitrided in a heating nitriding furnace, and the method specifically comprises the following steps: firstly, opening a first push-pull type airtight door, closing a second push-pull type airtight door, moving a walking trolley 3 along a first track 2 to enable the walking trolley 3 to completely enter a heating section of a furnace body 1, then closing the first push-pull type airtight door, then introducing nitrogen with the pressure of 0.18MPa and the flow of 4ml/s through a nitrogen inlet pipe 5 to enable the furnace body 1 to be filled with the nitrogen, enabling the whole nitriding process to be in the nitrogen atmosphere, heating the spherical manganese-silicon base material by a heating resistor 4 of the heating section to enable the spherical manganese-silicon base material to be heated to 960 ℃, moving the walking trolley 3 along the first track 2 to a heat preservation section of the furnace body 1 after the spherical manganese-silicon base material is heated, preserving the heat for 310min at the heat preservation section, then stopping the heating resistor 4, moving the walking trolley 3 along the first track 2 to a cooling section of the furnace body 1 until the temperature is reduced to the room temperature, and finally, opening a second push-pull type sealed door, and moving the walking trolley 3 to the outside of the furnace body 1, thereby completing the nitridation of the spherical manganese-silicon base material.
Detecting the obtained nitrogen-rich manganese-silicon-based material, wherein the nitrogen-rich manganese-silicon-based material comprises the following chemical components in percentage by mass: 53.78% of Mn, 15.48% of C, 7.02% of Si, 19% of N and the balance of Fe.
Example 3
The preparation method of the nitrogen-rich manganese-silicon-based material comprises the following steps:
a. after the manganese-silicon base material is crushed, grinding the manganese-silicon base material into fine powder with the grain size of not more than 200 meshes and the grain size of less than 250 meshes of not less than 80 percent of the total number, wherein the manganese-silicon base material comprises the following chemical components in percentage by mass: 57% of Mn, 22% of C, 10% of Si and the balance of Fe;
b. pressing the fine powder obtained in the step a into spheres, adding bentonite and water during pressing, and airing after the spheres are formed, so that the water content in the spherical manganese-silicon base material is less than or equal to 0.5 percent, and the section diameter of the spherical manganese-silicon base material is 13 mm;
c. feeding the spherical manganese-silicon base material into a charging crucible of a heating nitriding furnace;
d. the method comprises the following steps of nitriding the spherical manganese-silicon base material in a heating nitriding furnace, specifically: firstly, opening a first push-pull type airtight door, closing a second push-pull type airtight door, moving a walking trolley 3 along a first track 2 to enable the walking trolley 3 to completely enter a heating section of a furnace body 1, then closing the first push-pull type airtight door, then introducing nitrogen with the pressure of 0.2MPa and the flow of 4ml/s through a nitrogen inlet pipe 5 to enable the furnace body 1 to be filled with the nitrogen, enabling the whole nitriding process to be in the nitrogen atmosphere, heating the spherical manganese-silicon base material by a heating resistor 4 of the heating section to heat the spherical manganese-silicon base material to 954 ℃, after the spherical manganese-silicon base material is heated, moving the walking trolley 3 along the first track 2 to a heat preservation section of the furnace body 1, preserving the heat for 305min at the heat preservation section, then stopping the heating resistor 4, moving the walking trolley 3 along the first track 2 to a cooling section of the furnace body 1 until the temperature is reduced to room temperature, and finally, opening a second push-pull type sealed door, and moving the walking trolley 3 to the outside of the furnace body 1, thereby completing the nitridation of the spherical manganese-silicon base material.
Detecting the obtained nitrogen-rich manganese-silicon-based material, wherein the nitrogen-rich manganese-silicon-based material comprises the following chemical components in percentage by mass: 50.25% of Mn, 17.5% of C, 6.83% of Si, 21% of N and the balance of Fe.
Claims (9)
1. A preparation method of a nitrogen-rich manganese-silicon-based material is characterized by comprising the following steps: the nitrogen-rich manganese-silicon-based material comprises the following chemical components in percentage by mass: 40-60% of Mn content, 10-20% of C content, 4-8% of Si content, 15-25% of N content and the balance of Fe, and comprises the following steps:
a. after the manganese-silicon base material is crushed, grinding the manganese-silicon base material into fine powder with a certain granularity, wherein the manganese-silicon base material comprises the following chemical components in percentage by mass: 55-65% of Mn, 15-25% of C, 5-10% of Si and the balance of Fe;
b. pressing the fine powder obtained in the step a into balls;
c. the method comprises the following steps of feeding spherical manganese-silicon base materials into a charging crucible of a heating nitriding furnace, wherein the heating nitriding furnace comprises a furnace body (1), a first rail (2), a traveling trolley (3), the charging crucible, a heating resistor (4) and a temperature measuring device, the furnace body (1) comprises a heating section, a heat preservation section and a cooling section which are connected together, a first push-pull type sealed door is arranged at the inlet end part of the heating section, a second push-pull type sealed door is arranged at the outlet end part of the cooling section, a plurality of nitrogen inlet pipes (5) are arranged around the inlet end part of the heating section, a plurality of nitrogen outlet pipes are arranged around the outlet end part of the cooling section, and the first rail (2), the traveling trolley (3), the charging crucible, the heating resistor (4) and the temperature measuring device are all arranged in the furnace body (1);
the travelling trolley (3) is arranged on the first track (2) in a matching mode, the travelling trolley (3) can move along the first track (2), the charging crucible is arranged in the travelling trolley (3), and the heating resistors (4) are uniformly distributed on the side portions and the top portions of the heating section and the heat preservation section of the furnace body (1);
d. the spherical manganese-silicon base material is nitrided in a heating nitriding furnace, and the method specifically comprises the following steps: firstly, opening a first push-pull type airtight door, closing a second push-pull type airtight door, moving a walking trolley (3) along a first track (2) to enable the walking trolley (3) to completely enter a heating section of a furnace body (1), then closing the first push-pull type airtight door, then introducing nitrogen with pressure through a nitrogen inlet pipe (5) to enable the furnace body (1) to be filled with the nitrogen, heating a spherical manganese-silicon base material by a heating resistor (4) of the heating section to heat the spherical manganese-silicon base material to 950-, and finally, opening a second push-pull type sealed door to move the walking trolley (3) to the outside of the furnace body (1) until the temperature is reduced to room temperature, thereby completing the nitridation of the spherical manganese-silicon base material.
2. The method of claim 1, wherein the nitrogen-rich manganese-silicon based material is prepared by: in the step a, the size fraction of the fine powder is less than or equal to 200 meshes, and the size fraction less than 250 meshes is not less than 80% of the total number.
3. The method of claim 1, wherein the nitrogen-rich manganese-silicon based material is prepared by: in the step b, adding the adhesive and the water in the process of pressing the fine powder into the spherical manganese-silicon base material, and airing after balling to ensure that the water in the spherical manganese-silicon base material is less than or equal to 0.5 percent.
4. A method of producing a nitrogen-rich manganese-silicon based material according to claim 3, wherein: the adhesive is bentonite.
5. The method of claim 1, wherein the nitrogen-rich manganese-silicon-based material is prepared by: in the step b, the cross-section diameter of the manganese-silicon base material pressed into the spherical shape is between 10 and 15 mm.
6. The method of claim 1, wherein the nitrogen-rich manganese-silicon based material is prepared by: the length of the furnace body (1) is between 40 and 60 m.
7. A method of producing a nitrogen-enriched manganese-silicon-based material according to any one of claims 1 to 6, wherein: the heating nitriding furnace also comprises a controller, and the heating resistor (4) and the temperature measuring device are connected with the controller.
8. The method of claim 7, wherein the nitrogen-rich manganese-silicon based material is prepared by: the walking power device is arranged on the walking trolley (3), the walking power device can enable the walking trolley (3) to move along the first track (2), and the walking power device is connected with the controller.
9. The method of claim 1, wherein the nitrogen-rich manganese-silicon based material is prepared by: the furnace body is characterized by further comprising a second rail, the second rail is located outside the furnace body (1), the second rail is connected with the first rail (2), and the second rail and the first rail (2) enclose to form a circle.
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