CN110379920A - One kind being based on fusion hole shape grading porous oxide memristor - Google Patents
One kind being based on fusion hole shape grading porous oxide memristor Download PDFInfo
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- 230000004927 fusion Effects 0.000 title claims abstract description 26
- 238000000576 coating method Methods 0.000 claims abstract description 67
- 239000011248 coating agent Substances 0.000 claims abstract description 64
- 239000010410 layer Substances 0.000 claims abstract description 64
- 229910021645 metal ion Inorganic materials 0.000 claims abstract description 22
- 230000005684 electric field Effects 0.000 claims abstract description 21
- 230000009471 action Effects 0.000 claims abstract description 14
- 230000037427 ion transport Effects 0.000 claims abstract description 4
- 239000002346 layers by function Substances 0.000 claims abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 52
- 239000000377 silicon dioxide Substances 0.000 claims description 23
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 19
- 239000002253 acid Substances 0.000 claims description 17
- 229910017052 cobalt Inorganic materials 0.000 claims description 17
- 239000010941 cobalt Substances 0.000 claims description 17
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 17
- 150000002500 ions Chemical class 0.000 claims description 12
- 239000011777 magnesium Substances 0.000 claims description 10
- 230000003647 oxidation Effects 0.000 claims description 10
- 238000007254 oxidation reaction Methods 0.000 claims description 10
- 229910021426 porous silicon Inorganic materials 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 8
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 8
- 229910052744 lithium Inorganic materials 0.000 claims description 8
- 238000002360 preparation method Methods 0.000 claims description 8
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 6
- 229910052749 magnesium Inorganic materials 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 239000011734 sodium Substances 0.000 claims description 6
- 229910052708 sodium Inorganic materials 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 239000012212 insulator Substances 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 229910032387 LiCoO2 Inorganic materials 0.000 claims description 4
- 229910021225 NaCoO2 Inorganic materials 0.000 claims description 4
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 4
- 230000000694 effects Effects 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 4
- 230000006870 function Effects 0.000 claims description 4
- 229910052700 potassium Inorganic materials 0.000 claims description 4
- 239000011591 potassium Substances 0.000 claims description 4
- NPYPAHLBTDXSSS-UHFFFAOYSA-N Potassium ion Chemical compound [K+] NPYPAHLBTDXSSS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052783 alkali metal Inorganic materials 0.000 claims description 2
- 150000001340 alkali metals Chemical class 0.000 claims description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 2
- 230000008859 change Effects 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- 238000004321 preservation Methods 0.000 claims description 2
- 238000006479 redox reaction Methods 0.000 claims description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 229960002050 hydrofluoric acid Drugs 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000011148 porous material Substances 0.000 claims 1
- 230000007246 mechanism Effects 0.000 abstract description 7
- 210000000225 synapse Anatomy 0.000 abstract description 4
- 238000004088 simulation Methods 0.000 abstract description 3
- 238000005265 energy consumption Methods 0.000 abstract description 2
- 239000010931 gold Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000013473 artificial intelligence Methods 0.000 description 3
- 230000006399 behavior Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000005012 migration Effects 0.000 description 3
- 238000013508 migration Methods 0.000 description 3
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 210000004556 brain Anatomy 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000005518 electrochemistry Effects 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910003978 SiClx Inorganic materials 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910001413 alkali metal ion Inorganic materials 0.000 description 1
- 229910001420 alkaline earth metal ion Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000013528 artificial neural network Methods 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000000445 field-emission scanning electron microscopy Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003446 memory effect Effects 0.000 description 1
- 230000006386 memory function Effects 0.000 description 1
- 210000005036 nerve Anatomy 0.000 description 1
- 150000002927 oxygen compounds Chemical class 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Of the invention a kind of based on fusion hole shape grading porous oxide memristor, basic structure successively includes bottom electrode layer, oxide skin(coating), top electrode layer from the bottom to top；It is characterized by: the function of the oxide skin(coating) is as resistive functional layer, including the first oxide skin(coating) and two layers of the second oxide skin(coating), the second oxide skin(coating) is close to bottom electrode layer side；The second layer oxide skin(coating) is porous structure, is class fusion hole graded porous structure, and the porous channel of the porous structure is interconnected, controllable metal ion transports under electric field action；When removing external electric field, metal ion can be stored.The oxide memristor, which has, to be stablized, more resistance states, the memristor characteristic of low energy consumption, new path is provided for probing into for memristor memristor mechanism, the electric property that memristor can be promoted shows good characteristic in terms of the simulation of artificial synapse, provides very big application prospect for neuromorphic calculating.
Description
Technical field
The present invention relates to one kind to be based on solution cavity shape grading porous oxide memristor, and the oxide memristor has surely
Fixed, more resistance states, the memristor characteristic of low energy consumption belongs to class brain calculating device technical field.
Background technique
With the continuous improvement that people require calculated performance, a kind of novel calculating with class cerebrology habit, memory function
Machine has become research hotspot.The appearance of artificial intelligence brings huge innovation for the development of emerging technology.Artificial intelligence is to grind
Studying carefully makes computer to simulate the subject of certain thought processes of people and intelligent behavior (such as study, reasoning, thinking, planning).Its
In, it is an important channel for realizing artificial intelligence based on neural network learning and application.Memristor is since it is with non-volatile
Property, the advantages such as structure is simple, low-power consumption, and the speed of service is fast make it possible that development has the intelligent computer of human brain level.
In addition, memristor has more resistance state switching characteristics, longer low resistance retention time, the erasable and writing speed of superelevation, with COMS device
The features such as mutually compatible.Therefore, high density storage calculating is being realized, before simulation of nerve synapse etc. has wide application
Scape.
Currently, being based on different materials, the memristor of different types of structure and different working mechanisms is by numerous studies.
In terms of material system, it is broadly divided into sulfide, oxide, nitride, perovskite, two-dimensional material, organic film etc.；From structure
In terms of type, it is broadly divided into both-end memristor and three end memristors；In terms of mechanistic class, be broadly divided into conductive filament mechanism,
Boundary migration mechanism, redox machinery and phase conversion mechanism etc.；In terms of conductance property, be broadly divided into continuous conductance behavior and
Quantum conductance behavior etc..However, memristor still faces many problems in the application, for example resistive mechanism is indefinite, and performance is difficult
The problems such as regulation.Such as: it is based on conductive filament type memristor, due to random phenomena such as generating, being broken of conductive filament, makes memristor
Device shows very great fluctuation process in terms of stability, and then limits its application in terms of artificial synapse；And non-conductive filament type
For memristor again with lower on-off ratio, the poor low resistance state retention time is cost, makes which limit in neuromorphic calculates
Further apply.
Summary of the invention
Memristor presently, there are aiming at the problem that, underground fusion hole structure makees the infiltration of water flow in unified with nature circle of the present invention
Characteristic proposes one kind based on fusion hole shape grading porous oxide memristor, recalls for memristor according to the principle of memristor
Probing into for mechanism of resistance provides new path, can promote the electric property of memristor, show in terms of the simulation of artificial synapse
Good characteristic provides very big application prospect for neuromorphic calculating.
The present invention uses following technical scheme, as shown in Figure 1:
Of the present invention a kind of based on fusion hole shape grading porous oxide memristor, basic structure is successively wrapped from the bottom to top
Include bottom electrode layer, oxide skin(coating), top electrode layer；It is characterized by: the function of the oxide skin(coating) is as resistive functional layer, packet
The first oxide skin(coating) and two layers of the second oxide skin(coating) are included, the second oxide skin(coating) is close to bottom electrode layer side；The second layer oxygen
Compound layer is porous structure, has the characteristics that class fusion hole graded porous structure, and the porous channel of the porous structure is interconnected,
Controllable metal ion transports under electric field action；When removing external electric field, metal ion can be stored.
Wherein, first oxide skin(coating) is cobalt acid lithium (LiCoO2), cobalt acid sodium (NaCoO2), cobalt acid potassium (KCoO2)、
Cobalt acid magnesium (Mg (CoO2)2) one of or ion doping cobalt acid lithium (LiCoO2: A), ion doping cobalt acid sodium (NaCoO2::
A), ion doping cobalt acid potassium (KCoO2: A), ion doping cobalt acid magnesium (Mg (CoO2)2One of: A), the A ion includes each
Kind alkali metal and alkali earth metal, specially lithium (Li+), sodium (Na+), potassium (K+), magnesium (Mg2+) one of, two kinds or two
Kind or more；
Wherein, second oxide skin(coating) is silica (SiOx)。
First oxide skin(coating) is insulator, and under electric field action, metal ion can be from the first oxide skin(coating) knot
Freely taken off in structure/embedding, the resistance value of the first oxide skin(coating) changes.When metal ion is detached from from the first oxide skin(coating),
First oxide skin(coating) becomes semiconductor or conductor from insulator；Conversely, when metal ion is embedded into the first oxide skin(coating) again,
First oxide skin(coating) becomes semiconductor or insulator from conductor, and significant change will not occur for the micro-structure of the first oxide skin(coating),
With a thickness of 80~100 nanometers.
Wherein, second oxide skin(coating), i.e. porous silica (SiOx) layer preparation process it is as follows: in constant current mode
Under, in hydrofluoric acid (HF) solution that concentration is 1%, by P (100) Si of high doped, P (111) Si of high doped, height
One of N (100) Si, N (111) Si of high doped of doping are used as anode, and one of platinum (Pt), golden (Au) are as yin
The pole, (150mA/cm under constant current mode2), using electrochemistry anodic oxidation, porous silicon is prepared, is then put into porous silicon
Tube furnace, (1 × 10 in the environment of oxygen5Pa thermal oxidation) is carried out to it, oxidizing temperature is 800 DEG C~900 DEG C, system
The standby porous silica into a thickness of 150~200 nanometers.
Described one kind is based on fusion hole shape grading porous oxide memristor, which includes macropore-mesoporous-aperture,
And it is interconnected.
The top electrode layer includes various inert metals, specially one of platinum (Pt), golden (Au), with a thickness of 80~
100 nanometers.
The bottom electrode layer mainly includes P (100) Si of high doped, P (111) Si of high doped, high doped
N (100) Si or one of N (111) Si of high doped, with a thickness of 320~330 microns.
The preparation method of the top electrode layer includes at least one of pulse laser deposition, magnetron sputtering etc. or two
Kind.
The preparation method of first oxide skin(coating) include at least one of pulse laser deposition, magnetron sputtering etc. or
Two kinds of person.
The method for realizing memristor effect using memristor of the invention:
Step 1: writing process, bottom electrode layer ground connection apply continuous forward voltage to top electrode layer；First oxide
The metal ion of layer is detached under the action of electric field from the first oxide skin(coating), into the second oxide skin(coating), that is, porous silica layer,
Redox reaction occurs with porous silica, device resistance state changes；
Step 2: erase process, continues to apply continuous negative voltage to top electrode layer Au/Pt；Under the action of electric field,
Metal ion is detached from from the second oxide skin(coating), that is, porous oxide coatings, returns to the first oxide skin(coating)；Due in porous silica layer
Interconnected graded porous structure, so that metal ion remains to be embedded in silicon oxide layer well after removing external electric field, it is real
The preservation of the conductance of existing device, device show polymorphism characteristic.
Compared with prior art, the present invention is a kind of is based on fusion hole shape grading porous oxide memristor, has the advantages that
1. the porous channel in the second oxide skin(coating), that is, porous silica layer has the function of electric field；
2. the porous channel in the second oxide skin(coating), that is, porous silica layer is that transporting for ion provides under electric field action
Channel；
3. removing external electric field, the interconnected channel in the second oxide skin(coating), that is, porous silica layer can effectively be deposited
Store up metal ion；
4. the migration generation based on alkali or alkaline earth metal ion in the second oxide skin(coating), that is, porous silica layer is recalled
Inhibition effect.
5. utilizing migration and first oxide skin(coating) resistance value of the ion in the second oxide skin(coating), that is, porous silica layer
Variation, observes polymorphic effect.
Detailed description of the invention
Fig. 1 is the structural schematic diagram based on fusion hole shape grading porous oxide memristor.
Fig. 2 is the technology of preparing route map based on fusion hole shape grading porous oxide memristor porous silicon.
Fig. 3 is the technology of preparing route map based on fusion hole shape grading porous oxide memristor porous silica.
Fig. 4 a is the surface FE-SEM figure of porous oxidation silicon structure, and the porous structure in figure shows different size rulers
It is very little, there are macropore, mesoporous and aperture；Fig. 4 b is the cross-section analysis figure of porous silica and silicon substrate, wherein porous silica
In porous channel be interconnected.
Fig. 5 is the Technology Roadmap based on fusion hole shape grading porous oxide memristor.
Fig. 6 is the electrical measurement figure based on fusion hole shape grading porous oxide memristor, and wherein Fig. 6 a is to apply continuously
Forward voltage, voltage-current curve graph, voltage scan range 0V-5V, Fig. 6 b are continuous negative voltage, and voltage-to-current is bent
Line scanning figure, voltage scan range are -5V-0V, and Fig. 6 c is to apply electricity corresponding to 5 positive triangle wave voltages to the device
Stream-time, in the expansion of time zone, Fig. 6 d is to apply 5 negative sense triangles to the device for voltage-time graph, i.e. voltage-to-current
Current-vs-time corresponding to wave voltage, the expansion of voltage-time graph, i.e. voltage-to-current in time zone.
Specific label is as follows in figure: 201- top electrode layer；The first oxide skin(coating) of 101-；The second oxide skin(coating) of 102-；202-
Bottom electrode layer.
Specific embodiment
Present invention combination figure embodiment is described in further detail, and the embodiment is intended to convenient for of the invention
Solution, specific CONSTRUCTED SPECIFICATION and function detail are only the purposes for indicating description example embodiment, do not play any restriction to it and make
With.Therefore, can by many can in the form of implement the present invention, and the present invention is not construed as being limited only to proposing again
Example embodiment, but all changes fallen within the scope of the present invention, equivalent and refill should be covered.
In the present embodiment, it is based on " apex electrode/oxide skin(coating)/bottom electrode " structure, as shown in Figure 1, the structure is from upper
There are top electrode layer 201, the first oxide skin(coating) 101, the second oxide skin(coating) 102, bottom electrode layer 202 under.
The structure use pulse laser, magnetron sputtering, electron beam evaporation, electrochemical anodic oxidation, the methods of thermal oxide, by
Under supreme preparation layer-by-layer on substrate.As shown in figure 5, specific preparation process is as follows:
Step 1: selecting p-type (100) Si of high doped as bottom electrode layer 202, as anode, in HF (concentration
Under constant current mode, to prepare one layer of porous silicon using the method for electrochemical anodic oxidation, preparation process is such as in 1%) solution
It shown in Fig. 2, is cleaned, is dried up repeatedly using deionized water.
Step 2: growing one layer of second oxide skin(coating) 102 in clean porous silicon surface by thermal oxidation method is porous oxygen
SiClx layer, preparation process in hydrofluoric acid (HF) solution that concentration is 1%, incite somebody to action height as shown in figure 3, under constant current mode
P (100) Si of doping, P (111) Si of high doped, N (100) Si of high doped, high doped N (111) Si in one
Kind is used as anode, and one of platinum (Pt), golden (Au) are used as the cathode, (150mA/cm under constant current mode2), utilize electrochemistry sun
Pole oxidizing process prepares porous silicon, porous silicon is then put into tube furnace, (1 × 10 in the environment of oxygen5Pa) it is carried out
Thermal oxidation, oxidizing temperature are 850 DEG C, and the porous silica with a thickness of 170 nanometers is prepared.Porous oxidation silicon structure
Surface topography is as shown in fig. 4 a；Porous silica Cross Section Morphology is as shown in Figure 4 b；The second layer oxygen that the embodiment of the present invention is prepared
Compound layer is porous structure, has the characteristics that class fusion hole graded porous structure, and the porous channel of the porous structure is interconnected,
Controllable metal ion transports under electric field action；When removing external electric field, metal ion can be stored.
Step 3: one layer of cobalt acid lithium film is grown in 102 layer surface of the second oxide skin(coating) using pulsed laser deposition technique,
As the first oxide skin(coating) 101 of lithium source, prepared directly finally by the method for magnetron sputtering on 101 surface of the first oxide skin(coating)
The discrete top electrode layer 201 (such as Fig. 5) that diameter is 1 millimeter.Wherein, the discrete top electrode layer refers to similar to array one
The discrete electrode of sample grows multiple top electrodes, in array fashion using mask plate in first layer oxide layer surface
Arrangement.
It is as shown in Figure 6 in above-mentioned device using analyzing parameters of semiconductor tester.During write-in, bottom electrode layer is connect
Ground applies continuous forward voltage to top electrode layer Au/Pt.Under the action of electric field, metal ion is moved to porous silica layer
It moves, device resistance state changes, and shows polymorphism characteristic, as shown in Figure 6 a.
In erase process, continue to apply continuous negative voltage to top electrode layer Au/Pt.Under the action of electric field, gold
Belong to ion to be detached from from the second oxide skin(coating), that is, porous oxide coatings, returns to the first oxide skin(coating) 101, device shows polymorphic spy
Property, as shown in Figure 6 b.
Fig. 6 c and Fig. 6 d are that the voltage-to-current circulation figure in Fig. 6 a and Fig. 6 b is unfolded in time zone respectively, wherein black
Color solid line indicates that the voltage applied, grey filled lines indicate the electric current of response, and the abscissa time indicates under continuous pulse signal,
Maximum response current is gradually increased as time increases, as fig. 6 c；Or the increasing of maximum response Electricity Federation at any time
Add and gradually weaken, as shown in fig 6d.
Shown in sum up, which shows apparent memory effect, and shows a variety of resistance states.
Claims (10)
1. one kind be based on fusion hole shape grading porous oxide memristor, basic structure from the bottom to top successively include bottom electrode layer,
Oxide skin(coating), top electrode layer；It is characterized by: the function of the oxide skin(coating) is as resistive functional layer, including the first oxidation
Nitride layer and two layers of the second oxide skin(coating), the second oxide skin(coating) is close to bottom electrode layer side；The second layer oxide skin(coating) is more
Pore structure is class fusion hole graded porous structure, and the porous channel of the porous structure is interconnected, controllable under electric field action
Metal ion transports；When removing external electric field, metal ion can be stored.
2. according to claim 1 a kind of based on fusion hole shape grading porous oxide memristor, it is characterised in that: described
Second oxide skin(coating) is silica (SiOx)。
3. according to claim 1 a kind of based on fusion hole shape grading porous oxide memristor, it is characterised in that: described
Second oxide skin(coating), i.e. porous silica (SiOx) layer preparation process it is as follows: under constant current mode, concentration be 1% hydrogen
In fluoric acid (HF) solution, by P (100) Si of high doped, P (111) Si of high doped, high doped N (100) Si, height
It spends one of N (111) Si of doping and is used as anode, one of platinum (Pt), golden (Au) are used as cathode, utilize Anodic
Oxidizing process prepares porous silicon, porous silicon is then put into tube furnace, carries out thermal oxidation to it in the environment of oxygen,
Its oxidizing temperature is 800 DEG C~900 DEG C, and the porous silica with a thickness of 150~200 nanometers is prepared.
4. according to claim 1 a kind of based on fusion hole shape grading porous oxide memristor, it is characterised in that: described
Porous structure includes macropore-mesoporous-aperture, and is interconnected.
5. according to claim 1 a kind of based on fusion hole shape grading porous oxide memristor, it is characterised in that: described
First oxide skin(coating) is cobalt acid lithium (LiCoO2), cobalt acid sodium (NaCoO2), cobalt acid potassium (KCoO2), cobalt acid magnesium (Mg (CoO2)2) in
One kind or ion doping cobalt acid lithium (LiCoO2: A), ion doping cobalt acid sodium (NaCoO2:: A), ion doping cobalt acid potassium
(KCoO2: A), ion doping cobalt acid magnesium (Mg (CoO2)2One of: A).
A kind of be based on fusion hole shape grading porous oxide memristor 6. according to claim 5, it is characterised in that: it is described from
Sub- A includes various alkali metal and alkali earth metal, specially lithium (Li+), sodium (Na+), potassium (K+), magnesium (Mg2+) in one
It plants, two or more.
7. described in claim 1 a kind of based on fusion hole shape grading porous oxide memristor, it is characterised in that: described first
Oxide skin(coating) is insulator, under electric field action, metal ion can freely take off from the first layer structure oxide/and it is embedding, first
The resistance value of oxide skin(coating) changes；When metal ion is detached from from the first oxide skin(coating), the first oxide skin(coating) is by insulating
Body becomes semiconductor or conductor；Conversely, the first oxide skin(coating) is by conductor when metal ion is embedded into the first oxide skin(coating) again
Become semiconductor or insulator, and significant change will not occur for the micro-structure of the first oxide skin(coating), with a thickness of 80~100 nanometers.
8. described in claim 1 a kind of based on fusion hole shape grading porous oxide memristor, it is characterised in that: the top electricity
Pole layer includes various inert metals, specially one of platinum (Pt), golden (Au), with a thickness of 80~100 nanometers.
9. described in claim 1 a kind of based on fusion hole shape grading porous oxide memristor, it is characterised in that: the bottom electricity
Pole layer is mainly mixed including P (100) Si of high doped, P (111) Si of high doped, N (100) Si of high doped or height
One of miscellaneous N (111) Si, with a thickness of 320~330 microns.
10. the method that memristor described in a kind of application realizes memristor effect, includes the following steps:
Step 1: writing process, bottom electrode layer ground connection apply continuous forward voltage to top electrode layer；First oxide skin(coating)
Metal ion is detached under the action of electric field from the first oxide skin(coating), and more into the second oxide skin(coating), that is, porous silica layer
Redox reaction occurs for hole silica, and device resistance state changes；
Step 2: erase process, continues to apply continuous negative voltage to top electrode layer Au/Pt；Under the action of electric field, metal
Ion is detached from from the second oxide skin(coating), that is, porous oxide coatings, returns to the first oxide skin(coating)；Due to mutual in porous silica layer
The graded porous structure of connection realizes device so that metal ion remains to be embedded in silicon oxide layer well after removing external electric field
The preservation of the conductance of part, device show polymorphism characteristic.
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| CN113206191A (en) * | 2021-03-19 | 2021-08-03 | 北京航空航天大学 | Memristor based on feather-shaped porous oxide |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111725398A (en) * | 2020-05-27 | 2020-09-29 | 北京航空航天大学 | Preparation method of double-layer porous oxide structure based on artificial nerve synapse function |
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| CN111933794B (en) * | 2020-07-02 | 2023-08-01 | 北京航空航天大学 | MoS based on coexistence of analog type and digital type 2 Base memristor and preparation method thereof |
| CN113206191A (en) * | 2021-03-19 | 2021-08-03 | 北京航空航天大学 | Memristor based on feather-shaped porous oxide |
| CN113206191B (en) * | 2021-03-19 | 2022-07-22 | 北京航空航天大学 | Memristor based on feather-shaped porous oxide |
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