CN110379849A - A kind of thin film transistor (TFT) and display panel - Google Patents
A kind of thin film transistor (TFT) and display panel Download PDFInfo
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- CN110379849A CN110379849A CN201910661378.9A CN201910661378A CN110379849A CN 110379849 A CN110379849 A CN 110379849A CN 201910661378 A CN201910661378 A CN 201910661378A CN 110379849 A CN110379849 A CN 110379849A
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- film transistor
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- 239000010409 thin film Substances 0.000 title claims abstract description 51
- 239000010408 film Substances 0.000 claims description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Liquid Crystal (AREA)
Abstract
The present invention provides a kind of thin film transistor (TFT), it includes grid, active layer, source electrode and drain electrode, wherein, source electrode includes two the first sides and the second side being oppositely arranged, the upward first end of the two is connected by the interconnecting piece of an arc, and opening is formed between the downward second end of the two, and the drain electrode includes a vertical portion, the upward first end of the vertical portion is directed toward the center of the interconnecting piece, and the downward second end of the vertical portion is then extended outside the opening；Wherein first side or second side use arcuate shape.It is an advantage of the invention that it provides a kind of thin film transistor (TFT)s, the effective width of thin film transistor (TFT) is increased by increasing semi-circular structure symmetrical in source electrode, to realize maximized on-state current, improve the on-state current of thin film transistor (TFT), so that the driving capability of thin film transistor (TFT) is become strong, reaches driving voltage or electric current required for display panel.
Description
Technical field
The present invention relates to technical field of display panel, in particular to a kind of thin film transistor (TFT) and display panel.
Background technique
Liquid crystal display is a kind of current most popular flat-panel monitor, has been increasingly becoming various electronic equipments such as
Mobile phone, personal digital assistant (PDA), digital camera, computer screen or laptop screen, which are widely applied, to be had
The display of high-resolution color screen.The liquid crystal display generallyd use at present, usually there is upper and lower base plate and intermediate liquid crystal layer
Composition, substrate are made of glass and electrode etc..If upper and lower substrate has electrode, the display of longitudinal electric field mode can be formed
Device, such as TN (Twist Nematic) mode, VA (Vertical Alignment) mode, and visual angle is narrow to open in order to solve
The MVA (Multi-domain Vertical Alignment) of hair, PSVA (Polymer Stabilized Alignment).
In addition a kind of different from aforementioned display device, electrode is only positioned at the side of substrate, forms the display of lateral electric field mode
Device, such as IPS (In-plane switching) mode, FFS (Fringe Field Switching) mode.And it is aobvious at these
Show in mode, indispensable is exactly critical function of the thin film transistor (TFT) (TFT) as scanning wiretap.
Thin film transistor (TFT) (TFT) shape generallyd use at present is U-shaped thin film transistor (TFT), is as shown in Figure 1 traditional U-shaped
The structural schematic diagram of thin film transistor (TFT), including drain electrode 1, active layer 2, source electrode 3, grid 4, wherein source electrode 3 includes being parallel to each other to set
One end of the first side 31 and the second side 32 set, the two is connected by the interconnecting piece 33 of an arc, and the other end is formed
Opening.The center of one end face interconnecting piece 33 of drain electrode 1, and the other end then extends outside opening.Positioned at source electrode 3 and drain electrode 1 it
Between active layer 2 form channel region, the width of channel is W.
Wherein, due to arranged in parallel between the first side 31 of source electrode 3 and the second side 32 so that between the two away from
From being defined, i.e. the width of channel is defined, to limit the on-state current of thin film transistor (TFT).With mentioning for display specification
Height, such as larger sized panel, higher resolution, the demand of higher driving frequency etc., TFT cannot be fully met at present needs
It asks.
Therefore, it is necessory to develop a kind of novel thin film transistor (TFT), to overcome the deficiencies of existing technologies.
Summary of the invention
It is an object of the present invention to provide a kind of thin film transistor (TFT), it is able to solve thin film transistor (TFT) phase in the prior art
For the larger sized lesser problem of panel driving frequency.
To achieve the above object, the present invention provides a kind of thin film transistor (TFT) comprising grid, active layer, source electrode and drain electrode,
Wherein, source electrode includes two the first sides and the second side being oppositely arranged, and the upward first end of the two passes through an arc
Interconnecting piece connection, opening is formed between the downward second end of the two, the drain electrode includes a vertical portion, and the vertical portion is upward
First end be directed toward the center of the interconnecting piece, the downward second end of the vertical portion is then extended outside the opening；Wherein institute
Stating drain electrode further includes first transverse part being horizontally installed in the vertical portion, and the of the opposite end of first transverse part
One end and second end, which respectively correspond, is directed toward first side and second side, wherein first side or described second
Side uses arcuate shape.
Further, in other embodiments, wherein first side is arcuate shape, arc range is 0~2
π。
Further, in other embodiments, wherein the first end of first transverse part is directed toward first side
Center.
Further, in other embodiments, wherein second side portion is arcuate shape, arc range is 0~2
π。
Further, in other embodiments, wherein the second end of first transverse part is directed toward second side
Center.
Further, in other embodiments, wherein the second end of first side is also connected with a third side
First end, the second end of second side is also connected with the first end of one the 4th side, the third side and described
Opening is formed between the downward second end in four sides；The downward second end of the vertical portion extends the third side and described
Outside the opening formed between 4th side second end, second that parallel first transverse part is additionally provided in the vertical portion is horizontal
To portion, the first end and second end of the opposite end of second transverse part, which respectively corresponds, is directed toward the third side and described the
Four sides, wherein the third side or the 4th side use arcuate shape.
Further, its in embodiments, wherein the third side be arcuate shape, arc range be 0~2
π；Wherein the first end of second transverse part is directed toward the center of the third side.
Further, its in embodiments, wherein the 4th side be arcuate shape, arc range be 0~2
π；Wherein the second end of second transverse part is directed toward the center of the 4th side.
Further, its in embodiments, wherein the setting quantity of first side and second side, setting
The mode of setting can with the need depending on, and be not limited, as long as can guarantee the effective width for increasing thin film transistor (TFT), realization is maximumlly opened
State electric current.
Further, in other embodiments, wherein the drain electrode is in cross-shaped configuration.
Further, in other embodiments, wherein the drain electrode is in inverted T font structure.
Further, in other embodiments, wherein the source electrode and drain electrode same layer is arranged；The active layer is located at institute
It states between the film layer where grid and the source electrode and drain electrode, the grid mutually insulate with the active layer.
It is yet another object of the invention to provide a kind of display panels comprising ontology is provided with the present invention on the ontology
The thin film transistor (TFT) being related to.
Compared with the existing technology, the beneficial effects of the present invention are a kind of thin film transistor (TFT) is provided, by increasing in source electrode
The first side and the second side of circular shape increase the effective width of thin film transistor (TFT), to realize maximized ON state electricity
Stream, improves the on-state current of thin film transistor (TFT), and the driving capability of thin film transistor (TFT) is made to become strong, reaches and drives required for display panel
Dynamic voltage or current.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those skilled in the art, without creative efforts, it can also be obtained according to these attached drawings other attached
Figure.
Fig. 1 is the structural schematic diagram of thin film transistor (TFT) in the prior art；
Fig. 2 is the structural schematic diagram for the thin film transistor (TFT) that the embodiment of the present invention 1 provides；
Fig. 3 is the structural schematic diagram for the thin film transistor (TFT) that the embodiment of the present invention 2 provides.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
Specific structure and function details disclosed herein are only representative, and are for describing the present invention show
The purpose of example property embodiment.But the present invention can be implemented by many alternative forms, and be not interpreted as
It is limited only by the embodiments set forth herein.
In the description of the present invention, it is to be understood that, term " center ", " transverse direction ", "upper", "lower", "left", "right",
The orientation or positional relationship of the instructions such as "vertical", "horizontal", "top", "bottom", "inner", "outside" be orientation based on the figure or
Positional relationship is merely for convenience of description of the present invention and simplification of the description, rather than the device or element of indication or suggestion meaning must
There must be specific orientation, be constructed and operated in a specific orientation, therefore be not considered as limiting the invention.In addition, belonging to
Meaning is used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance or implicitly indicated in " first " " second "
The quantity of the technical characteristic shown.Limit as a result, by the feature of " first ", " second " can explicitly or implicitly include one or
More this feature of person.In description of the invention, unless otherwise indicated, the meaning of " plurality " is two or more.In addition,
Term " includes " and its any deformation, it is intended that cover and non-exclusive include.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected；It can
To be mechanical connection, it is also possible to be electrically connected；It can be directly connected, can also can be indirectly connected through an intermediary
Connection inside two elements.For the ordinary skill in the art, above-mentioned term can be understood at this with concrete condition
Concrete meaning in invention.
Term used herein above is not intended to limit exemplary embodiment just for the sake of description specific embodiment.Unless
Context clearly refers else, otherwise singular used herein above "one", " one " also attempt to include plural number.Also answer
When understanding, term " includes " and/or "comprising" used herein above provide the feature, integer, step, operation, list
The presence of member and/or component, and do not preclude the presence or addition of other one or more features, integer, step, operation, unit, group
Part and/or combination thereof.
Embodiment 1
Referring to Fig. 2, Fig. 2 show the structural schematic diagram of the thin film transistor (TFT) of the offer of the embodiment of the present invention 1, on realizing
Purpose is stated, the present invention provides a kind of thin film transistor (TFT), packet drain electrode 1, active layer 2, source electrode 3 and grid 4.
Source electrode 3 includes the first side 31 and the second side 32, and the two is oppositely arranged, and shape is all arc, the two it is upward
First end connected by the interconnecting piece 33 of an arc, opening is formed between the downward second end of the two.In other embodiment party
In formula the arc range of the first side 31 and the second side 32 be 0~2 π, in the present embodiment, preferably radian be π semicircle
Shape.
Drain electrode 1 includes the first transverse part 11 and vertical portion 12, and the first transverse part 11 is horizontally installed in vertical portion 12, and first
The first end of transverse part 11 is directed toward the center of the first side 31, and the second end of the first transverse part 11 is directed toward in the second side 32
The heart.The upward first end of vertical portion 12 is directed toward the center of interconnecting piece 33, and downward second end then extends the first side 31 and the
Outside the opening formed between the downward second end in two sides 32.
Active layer 2 between source electrode 3 and drain electrode 1 forms channel region, and the width of channel is W, the first transverse part
Set-up mode defines the width of channel.
Using this semi-surrounding mode, and source electrode 3 includes arc structure and two symmetrical semi-circular structures, this
Set-up mode can increase to the full extent the effective width of thin film transistor (TFT), to realize maximized on-state current, mention
The on-state current of high thin film transistor (TFT) makes the driving capability of thin film transistor (TFT) become strong, reaches driving electricity required for display panel
Pressure or electric current.
Above-mentioned source electrode, drain and gate are three electrodes of thin film transistor (TFT), according to the positional relationship of electrode that film is brilliant
Body pipe is divided into two classes.One kind is that grid is located at below source electrode and drain electrode, this kind of to be referred to as bottom gate thin film transistor；It is another kind of
It is that grid is located at the upper surface of source electrode and drain electrode, it is this kind of to be referred to as top gate type thin film transistor.Film crystal in the embodiment of the present invention
Guan Douwei bottom gate thin film transistor, source electrode 3 and drain electrode 1 same layer setting, active layer 2 are located at grid 4 and source electrode 3 and 1 institute of drain electrode
Film layer between, grid 4 and 2 phase of active layer insulate.
For the structure of above-mentioned thin film transistor (TFT), the structure of drain electrode can there are many, can be in inverted T font structure, cross
Type structure, preferably drain electrode is in cross-shaped configuration in the present embodiment.
Embodiment 2
Referring to Fig. 3, Fig. 3 show the structural schematic diagram of the thin film transistor (TFT) of the offer of the embodiment of the present invention 2, the present embodiment
In thin film transistor (TFT) structure it is roughly the same with embodiment 1, identical structure can refer to aforesaid way, no longer superfluous herein
State, be in place of main difference, source electrode 3 include further include third side 34 and the 4th side 35, the second of the first side 31
The first end of end connection third side 34, the second end of the second side 32 connect the first end of the 4th side 35, third side 34
And the 4th form opening between the downward second end in side 35, the downward second end of vertical portion 12 extends third side 34 and the
It is outer that opening is formed between the downward second end in four sides 35；Third side 34 and the 4th side 35 all use arcuate shape, preferably
It is the semicircle of π for radian.
It also resides in place of its main difference, further include drain electrode 1 further includes the second transverse part 13, the second transverse part 13 is parallel to
First transverse part 11, the first end of the second transverse part 13 are directed toward the center of third side 34, and second end is directed toward the 4th side 35
Center.
Its in embodiments the setting quantity of the first side and the second side, set-up mode can with the need depending on, and
It is unlimited, as long as can guarantee the effective width for increasing thin film transistor (TFT), realize maximized on-state current.
Embodiment 3
Another embodiment of the invention is to provide a kind of display panel comprising ontology is provided with this implementation 1 on ontology
Or the thin film transistor (TFT) that embodiment 2 provides.
The beneficial effects of the present invention are a kind of thin film transistor (TFT) is provided, by the first side for increasing circular shape in source electrode
Portion and the second side increase the effective width of thin film transistor (TFT), to realize maximized on-state current, improve film crystal
The on-state current of pipe makes the driving capability of thin film transistor (TFT) become strong, reaches driving voltage or electric current required for display panel.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
Member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications also should be regarded as
Protection scope of the present invention.
Claims (10)
1. a kind of thin film transistor (TFT), which is characterized in that it includes grid, active layer, source electrode and drain electrode, wherein source electrode includes two
The upward first end of a the first side and the second side being oppositely arranged, the two is connected by the interconnecting piece of an arc, and two
Opening is formed between the downward second end of person, the drain electrode includes a vertical portion, and the upward first end of the vertical portion is directed toward institute
The center of interconnecting piece is stated, the downward second end of the vertical portion is then extended outside the opening；It is characterized in that, the wherein leakage
Pole further includes first transverse part being horizontally installed in the vertical portion, the first end of the opposite end of first transverse part
It is respectively corresponded with second end and is directed toward first side and second side, wherein first side or second side
Using arcuate shape.
2. a kind of thin film transistor (TFT) according to claim 1, which is characterized in that first side is arcuate shape,
Arc range is 0~2 π.
3. a kind of thin film transistor (TFT) according to claim 2, which is characterized in that the first end of first transverse part is directed toward
The center of first side.
4. a kind of thin film transistor (TFT) according to claim 1, which is characterized in that second side is arcuate shape,
Arc range is 0~2 π.
5. a kind of thin film transistor (TFT) according to claim 4, which is characterized in that the second end of first transverse part is directed toward
The center of second side.
6. a kind of thin film transistor (TFT) according to claim 1, which is characterized in that the second end of first side is also connected with
There is the first end of a third side, the second end of second side is also connected with the first end of one the 4th side, the third
Opening is formed between the downward second end in side and the 4th side；The downward second end of the vertical portion extends described
Outside the opening formed between three sides and the 4th side second end, it is horizontal that parallel described first is additionally provided in the vertical portion
To second transverse part in portion, the first end and second end of the opposite end of second transverse part, which respectively corresponds, is directed toward the third
Side and the 4th side, wherein the third side or the 4th side use arcuate shape.
7. a kind of thin film transistor (TFT) according to claim 6, which is characterized in that the third side is arcuate shape,
Arc range is 0~2 π；Wherein the first end of second transverse part is directed toward the center of the third side.
8. a kind of thin film transistor (TFT) according to claim 6, which is characterized in that the 4th side is arcuate shape,
Arc range is 0~2 π；Wherein the second end of second transverse part is directed toward the center of the 4th side.
9. a kind of thin film transistor (TFT) according to claim 1, which is characterized in that the source electrode and drain electrode same layer setting；Institute
It states between the film layer where active layer is located at the grid and the source electrode and drain electrode, the grid and the active layer are mutually exhausted
Edge.
10. a kind of display panel, which is characterized in that it includes ontology, and claim 1-9 any one is provided on the ontology
The thin film transistor (TFT).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910661378.9A CN110379849A (en) | 2019-07-22 | 2019-07-22 | A kind of thin film transistor (TFT) and display panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910661378.9A CN110379849A (en) | 2019-07-22 | 2019-07-22 | A kind of thin film transistor (TFT) and display panel |
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| CN110379849A true CN110379849A (en) | 2019-10-25 |
Family
ID=68254704
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| CN201910661378.9A Pending CN110379849A (en) | 2019-07-22 | 2019-07-22 | A kind of thin film transistor (TFT) and display panel |
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Application publication date: 20191025 |