CN105826396A - Film transistor, display substrate and display device - Google Patents
Film transistor, display substrate and display device Download PDFInfo
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- CN105826396A CN105826396A CN201610374437.0A CN201610374437A CN105826396A CN 105826396 A CN105826396 A CN 105826396A CN 201610374437 A CN201610374437 A CN 201610374437A CN 105826396 A CN105826396 A CN 105826396A
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- 239000000758 substrate Substances 0.000 title abstract 2
- 239000010409 thin film Substances 0.000 claims description 24
- 230000003071 parasitic effect Effects 0.000 abstract description 8
- 230000002411 adverse Effects 0.000 abstract 1
- 238000004364 calculation method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Ceramic Engineering (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention discloses a film transistor, a display substrate and a display device. The film transistor comprises an active layer, a source electrode and a drain electrode, wherein the drain electrode is half surrounded by the source electrode, the first portion of the drain electrode is at an inner portion of an opening of the source electrode, and the second portion of the drain electrode extends from the inner portion of the opening of the source electrode to an outer portion of the opening of the source electrode. Through the film transistor, parasitic capacitance between a grid electrode and the source electrode can be reduced and stabilized, so adverse phenomena such as splash screen display can be avoided.
Description
Technical field
The present invention relates to Display Technique field, especially relate to a kind of thin film transistor (TFT), display base plate and display device.
Background technology
At TFTLCD (ThinFilmTransistorLiquidCrystalDisplay, TFT liquid crystal display) in, the charging of pixel electrode is controlled by opening and shutting off of TFT, if wanting to improve charge efficiency, can increase charging ability, a kind of very important means are the breadth length ratios (W/L) of the raceway groove increasing TFT.Owing to the design of single-groove road is taken up space too big and affects aperture opening ratio, thus introducing channel configuration, common double channel is as it is shown in figure 1, rough calculation channel width is 2 (2a+b).When increasing the breadth length ratio of double channel TFT, increase W value generally by the mode increasing a value, but the space that TFT takies can be increased simultaneously, cause the reduction of aperture opening ratio.
From the existing channel configuration shown in Fig. 1 it can be seen that the space shared by TFT is bigger, easily cause parasitic capacitance Cgs between grid and source electrode and increase, cause making Δ Vp increase.And, existing channel configuration has two drain electrodes (Drain pole), it is unstable that it can still result in the parasitic capacitance between grid source electrode in the case of technique very minor swing, is easily caused the generation of the relevant display bad phenomenon such as splashette (Flicker).
Summary of the invention
A kind of parasitic capacitance that can reduce between grid and source electrode of offer is provided, and then avoids the occurrence of the technical scheme that the display bad phenomenon such as splashette occur.
In order to achieve the above object, according to an aspect of the present invention, provide a kind of thin film transistor (TFT), include active layer, source electrode and drain electrode, drain described in described source electrode semi-surrounding, the Part I of described drain electrode is positioned at the open interior of described source electrode, and the Part II of described drain electrode extends to the open outside of described source electrode from the open interior of described source electrode.
Preferably, when the grid of described thin film transistor (TFT) works, the active layer between described source electrode and described drain electrode forms a conduction channel region, the identical length etc. at any one place, described conduction channel region.
Preferably, described source electrode is of an L-shaped structure, and described drain electrode is of an L-shaped structure.
Preferably, described source electrode and described drain electrode are zhou duicheng tuxing, and the axis of symmetry of described source electrode overlaps with the axis of symmetry of described drain electrode.
Preferably, described source electrode is substantially in C font structure.
Preferably, described drain electrode is in the font structure of falling T.
Preferably, described drain electrode is I font structure, raindrop type structure, round structure or semicircle type structure.
Preferably, the most U-shaped structure of described source electrode, and the U-shaped structure of described drain electrode or rectangular configuration.
Preferably, the opening direction of described source electrode is parallel to the direction of the data wire being connected with described source electrode.
Preferably, the opening direction of described source electrode is perpendicular to the direction of the data wire being connected with described source electrode.
According to another aspect of the present invention, it is provided that a kind of display base plate, this display base plate includes above-mentioned thin film transistor (TFT).
According to a further aspect of the invention, it is provided that a kind of display device, this display device includes above-mentioned display base plate.
Compared with prior art, thin film transistor (TFT) of the present invention, display base plate and display device, compared to traditional double channel design, if in the case of keeping channel length constant, the width of raceway groove can be increased, thus increase the breadth length ratio of raceway groove, if in the case of keeping identical breadth length ratio, the width of raceway groove can be reduced, such that it is able to reduce taking up room of TFT, and then increase the aperture opening ratio of TFT, and, owing to only drawing a drain electrode, can reduce because the reasons such as fabrication error cause the fluctuation of parasitic capacitance Cgs between grid source electrode, thus reduce bad incidence rate.
Accompanying drawing explanation
Fig. 1 is the existing double channel TFT structure schematic diagram according to prior art；
Fig. 2 is the TFT structure schematic diagram according to the preferred embodiment of the present invention one；
Fig. 3 is the TFT structure schematic diagram according to the preferred embodiment of the present invention two.
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is only a part of embodiment of the present invention rather than whole embodiments.Based on the embodiment in the present invention, the every other embodiment that those of ordinary skill in the art is obtained on the premise of not making creative work, broadly fall into the scope of protection of the invention.
Embodiments provide a kind of thin film transistor (TFT), include active layer, source electrode and drain electrode, drain described in described source electrode semi-surrounding, the Part I of described drain electrode is positioned at the open interior of described source electrode, and the Part II of described drain electrode extends to the open outside of described source electrode from the open interior of described source electrode.
Use this semi-surrounding mode, the width of raceway groove can be increased to the full extent, and the length of raceway groove is in the case of identical with the length of existing double channel, breadth length ratio (W/L) can be increased, and only one of which drain electrode, can improve the stability of parasitic capacitance between grid and source electrode, thus avoid the bad generation of the displays such as splashette.
When the grid of described thin film transistor (TFT) works, the active layer between described source electrode and described drain electrode forms a conduction channel region, the identical length etc. at any one place, described conduction channel region.
It is to say, conduction channel region is uniformly to extend, the length of raceway groove be changeless (the most equal), i.e. source electrode be equal to the distance between draining.
For the structure of above-mentioned thin film transistor (TFT), described in described source electrode semi-surrounding, the mode of drain electrode has multiple:
(1) described source electrode is of an L-shaped structure, and described drain electrode is of an L-shaped structure.In this kind of structure, the general configuration of L-type source electrode is L-type hollow structure, the Part I that horizontal component is described drain electrode of L-type drain electrode, the Part II that vertical portion is described drain electrode of L-type drain electrode.
Under the design of this L-type structure, described source electrode and described drain electrode are not belonging to symmetric figure.
It is, of course, also possible to described source electrode and described drain electrode to be both designed as zhou duicheng tuxing, and can ensure that the axis of symmetry of described source electrode overlaps with the axis of symmetry of described drain electrode.In this case, described in described source electrode semi-surrounding, the mode of drain electrode can use:
(2) described source electrode is substantially in C font structure, correspondingly, described drain electrode can in the font structure of falling T, described drain electrode can also in I font structure, raindrop type structure, round structure or semicircle type structure.
(3) the most U-shaped structure of described source electrode, and the U-shaped structure of described drain electrode or rectangular configuration.
In actual applications, described source electrode uses C font structure, described drain electrode uses raindrop type structure, round structure or the design of semicircle type structure, can preferably increase the breadth length ratio of described conductive region, certainly other structure possesses the most completely increases the effect of breadth length ratio, on the whole, owing to described source electrode forms semi-surrounding to described drain electrode, in the case of keeping length the same (especially compared with the raceway groove shown in Fig. 1), the longest effect of encirclement length of semi-surrounding is the best, this is that described source electrode uses C font structure, described drain electrode uses raindrop type structure, when round structure or semicircle type structure, increase the preferable reason of effect of breadth length ratio.
It should be noted that the kind of design of this raceway groove is relatively more flexible, in actual application, can be adjusted according to the actual requirements completely.
Below with described source electrode substantially in C font structure time, and as a example by described drain electrode is in the font structure of falling T, and refer to Fig. 2 and Fig. 3 simultaneously, introduce following two preferred embodiment respectively:
Preferred embodiment one
As shown in Figure 2, the opening direction of described source electrode 1 is parallel to the direction of the data wire 2 being connected with described source electrode 1, owing to grid line 3 is vertical with data wire 2, therefore, the opening direction of described source electrode 1 is also perpendicularly to grid line 3, drain electrode 4 is lived by described source electrode 1 semi-surrounding and is formed raceway groove 5 between, it is to say, Fig. 2 shows the channel TFT structure that a horizontal left and right is symmetrical, the length of raceway groove is fixing, if rough calculation, the width of raceway groove substantially 2 (2a+b)+c+2d.
Preferred embodiment two
As shown in Figure 3, the opening direction of described source electrode 1 is perpendicular to the direction of the data wire 2 being connected with described source electrode 1, owing to grid line 3 is vertical with data wire 2, therefore, the opening direction of described source electrode 1 is parallel to grid line 3, drain electrode 4 is lived by described source electrode 1 semi-surrounding and is formed raceway groove 5 between, it is to say, Fig. 3 shows a vertical laterally zygomorphic channel TFT structure, the length of raceway groove is fixing, if rough calculation, the width of raceway groove substantially 2 (2a+b)+c+2d.
As can be seen here, raceway groove in Fig. 2 or Fig. 3 be in fact a kind of become symmetric arrays single channel structure, but relative to traditional channel configuration, it mainly makes full use of double channel junction and port to transmit signal, increases the breadth length ratio of raceway groove by extending the width of raceway groove.
Use this novel channel, in the case of rough calculation, its width value is 2 (2a+b)+c+2d, compared to common double channel, keep channel length constant please under, its channel width substantially adds c+2d, if in the case of keeping identical breadth length ratio, taking up room of TFT can be reduced, such that it is able to increase the aperture opening ratio of display base plate.And, owing to only drawing a drain electrode, compare the parasitic capacitance (Cgs) that common double channel reduces between grid and source electrode, thus reduce Δ Vp, and the Cgs fluctuation caused because of reasons such as fabrication errors can be reduced, therefore can reduce the relevant bad incidence rates such as splashette.
And, it is achieved this raceway groove designs without technologic change, only need to change mask plate (Mask), and in application region, ratio is wide, can apply in AA district, ESD district, the place such as GOA district.In actual applications, in the face of the design requirement of big breadth length ratio (W/L), it is also possible to raceway groove to be designed to dual channel type, triple channel type or many channel-types etc..
On the basis of above-mentioned thin film transistor (TFT), present invention also offers a kind of display base plate, this display base plate includes above-mentioned thin film transistor (TFT).Due to the above-mentioned thin film transistor (TFT) that thes improvement is that of this display base plate, in conjunction with accompanying drawing, this display base plate is not described in detail.Similarly, on the basis of this display base plate, the embodiment of the present invention additionally provides a kind of display device, and this display device includes above-mentioned display base plate.
The novel TFT channel design that the embodiment of the present invention provides, compared to existing double channel design, in the case of keeping channel length constant, can largely increase the width of raceway groove, thus increase the breadth length ratio of raceway groove, certainly, if in the case of keeping identical breadth length ratio, the width of raceway groove can be reduced, the most just can reduce taking up room of TFT, and then increase the aperture opening ratio of display base plate.
And, it is achieved while double channel, only draw a drain electrode, can reduce because the reasons such as fabrication error cause the fluctuation of parasitic capacitance Cgs between grid source, thus reduce bad incidence rate.
The above is the preferred embodiment of the present invention; it should be pointed out that, for the person of ordinary skill of the art, on the premise of without departing from principle of the present invention; some improvements and modifications can also be made, within these improvements and modifications also should be considered to be encompassed in protection scope of the present invention.
Claims (12)
1. a thin film transistor (TFT), include active layer, source electrode and drain electrode, it is characterised in that drain described in described source electrode semi-surrounding, the Part I of described drain electrode is positioned at the open interior of described source electrode, and the Part II of described drain electrode extends to the open outside of described source electrode from the open interior of described source electrode.
Thin film transistor (TFT) the most according to claim 1, it is characterised in that when the grid of described thin film transistor (TFT) works, the active layer between described source electrode and described drain electrode forms a conduction channel region, the identical length etc. at any one place, described conduction channel region.
Thin film transistor (TFT) the most according to claim 2, it is characterised in that described source electrode is of an L-shaped structure, and described drain electrode is of an L-shaped structure.
Thin film transistor (TFT) the most according to claim 2, it is characterised in that described source electrode and described drain electrode are zhou duicheng tuxing, and the axis of symmetry of described source electrode overlaps with the axis of symmetry of described drain electrode.
Thin film transistor (TFT) the most according to claim 4, it is characterised in that described source electrode is substantially in C font structure.
Thin film transistor (TFT) the most according to claim 5, it is characterised in that described drain electrode is in the font structure of falling T.
Thin film transistor (TFT) the most according to claim 5, it is characterised in that described drain electrode is I font structure, raindrop type structure, round structure or semicircle type structure.
Thin film transistor (TFT) the most according to claim 4, it is characterised in that the most U-shaped structure of described source electrode, and the U-shaped structure of described drain electrode or rectangular configuration.
Thin film transistor (TFT) the most according to any one of claim 1 to 8, it is characterised in that the opening direction of described source electrode is parallel to the direction of the data wire being connected with described source electrode.
Thin film transistor (TFT) the most according to any one of claim 1 to 8, it is characterised in that the opening direction of described source electrode is perpendicular to the direction of the data wire being connected with described source electrode.
11. 1 kinds of display base plates, it is characterised in that including: the thin film transistor (TFT) according to any one of claim 1 to 10.
12. 1 kinds of display devices, it is characterised in that include the display base plate described in claim 11.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610374437.0A CN105826396A (en) | 2016-05-31 | 2016-05-31 | Film transistor, display substrate and display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610374437.0A CN105826396A (en) | 2016-05-31 | 2016-05-31 | Film transistor, display substrate and display device |
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| Publication Number | Publication Date |
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| CN105826396A true CN105826396A (en) | 2016-08-03 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201610374437.0A Pending CN105826396A (en) | 2016-05-31 | 2016-05-31 | Film transistor, display substrate and display device |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106932968A (en) * | 2017-05-11 | 2017-07-07 | 京东方科技集团股份有限公司 | A kind of display panel and display device |
| CN106992214A (en) * | 2017-04-25 | 2017-07-28 | 京东方科技集团股份有限公司 | A kind of thin film transistor (TFT) and preparation method thereof, array base palte, display device |
| CN110379849A (en) * | 2019-07-22 | 2019-10-25 | 深圳市华星光电半导体显示技术有限公司 | A kind of thin film transistor (TFT) and display panel |
| CN110619856A (en) * | 2019-08-23 | 2019-12-27 | 深圳市华星光电半导体显示技术有限公司 | GOA circuit |
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| US20050032340A1 (en) * | 2003-07-24 | 2005-02-10 | Seiko Epson Corporation | Semiconductor device and method of manufacturing the same |
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| CN110379849A (en) * | 2019-07-22 | 2019-10-25 | 深圳市华星光电半导体显示技术有限公司 | A kind of thin film transistor (TFT) and display panel |
| CN110619856A (en) * | 2019-08-23 | 2019-12-27 | 深圳市华星光电半导体显示技术有限公司 | GOA circuit |
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Application publication date: 20160803 |
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