CN110364543A - A kind of imaging sensor and preparation method thereof - Google Patents
A kind of imaging sensor and preparation method thereof Download PDFInfo
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- CN110364543A CN110364543A CN201910491174.5A CN201910491174A CN110364543A CN 110364543 A CN110364543 A CN 110364543A CN 201910491174 A CN201910491174 A CN 201910491174A CN 110364543 A CN110364543 A CN 110364543A
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- 238000003384 imaging method Methods 0.000 title claims abstract description 25
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 86
- 238000002955 isolation Methods 0.000 claims abstract description 12
- 238000001259 photo etching Methods 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 10
- 238000009792 diffusion process Methods 0.000 claims description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims description 7
- 230000005622 photoelectricity Effects 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 238000001465 metallisation Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000011946 reduction process Methods 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 229910052710 silicon Inorganic materials 0.000 description 16
- 239000010703 silicon Substances 0.000 description 16
- 238000005286 illumination Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000011514 reflex Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14629—Reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14649—Infrared imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
The invention discloses a kind of imaging sensors and preparation method thereof, including substrate layer and dielectric layer, wherein the substrate layer includes the photodiode and electronic receipt shift module between shallow trench isolation；Side in the dielectric layer far from substrate layer includes reflecting layer, and it is flat reflecting layer that the reflecting layer, which corresponds to the region of photodiode, and the region except corresponding photodiode is the convex refractive layer towards substrate layer.A kind of imaging sensor provided by the invention and preparation method thereof, enables the light of non-photodiode area to be collected by photodiode area, and then improves the quantum efficiency of near infrared light.
Description
Technical field
The invention belongs to field of image sensors, a kind of imaging sensor and preparation method thereof is particularly belonged to.
Background technique
Near-infrared (NIR) imaging sensor has important application in two fields.First field is safety monitoring system
System, under low luminous environment, NIR light is more than optical photon, therefore captured image resolution ratio is higher, can capture apparent
Family invader image.The application in second field is machine vision, and near-infrared (NIR) light human eye is invisible, Jin Erke
To avoid the interference to ambient enviroment, but it can be used for illuminating objects.
Two key parameters of near-infrared (NIR) imaging system first is that quantum efficiency (QE), the amount of imaging sensor
Sub- efficiency is the photon of capture and the ratio for being converted into electronics.QE is higher, and the attainable distance of NIR illumination is remoter, brightness of image
It is higher.
Back side illumination image sensor light is to enter photodiode from silicon chip back side is directly incident, needs not move through metal interconnection
Layer and dielectric layer, and then light loss is avoided, improve quantum efficiency.Absorption depth and incident wave of the silicon substrate to incident light
Length is closely related, and wavelength is longer, and absorption coefficient is smaller, and incident depth is deeper.Pixel unit it is usually used be feux rouges, green light and
This 3 kinds of light of blue light.The wavelength of blue light is 450 nanometers, and incident depth is 0.32 micron in a silicon substrate, and green wavelength is received for 550
Rice, incident depth is 0.79um in a silicon substrate, and red light wavelength is 650 nanometers, and incident depth is 3 microns of left sides in a silicon substrate
It is right.A length of 780~1100 nanometers of near-infrared light waves, it is greater than 6 microns in incident depth in a silicon substrate.And back side illumination image senses
For the Si-Substrate Thickness of device in 3 microns, this results in the light of near-infrared that can enter dielectric layer directly through silicon substrate, and then leads
Cause near infrared light quantum efficiency very low.It, can not be simultaneously if directly preparing the imaging sensor that Si-Substrate Thickness is 6 microns
The Image Acquisition of compatible visible light and near-infrared.
Summary of the invention
A kind of imaging sensor provided by the invention and preparation method thereof, the photodiode in back side illumination image sensor
Top forms flat reflecting layer, and convex refractive layer is formed above non-photodiode, and reflecting layer makes incidence in the dielectric layer
Incident light be reflected onto photodiode, wherein convex refractive layer for incident light have gathers effect so that non-photoelectricity
The light of diode area can be collected by photodiode area, and then improve the quantum efficiency of near infrared light.
To achieve the goals above, the present invention adopts the following technical scheme: a kind of imaging sensor, including substrate layer and Jie
Matter layer, wherein the substrate layer includes the photodiode and electronic receipt shift module between shallow trench isolation；It is described
Side in dielectric layer far from substrate layer includes reflecting layer, and it is plane reflection that the reflecting layer, which corresponds to the region of photodiode,
Layer, corresponding to the region except photodiode is the convex refractive layer towards substrate layer.
Further, the electronic receipt shift module includes transfer gate and floating diffusion.
Further, the substrate layer with a thickness of any number in 2-4 microns.
Further, frontal projected area of the flat reflecting layer on substrate layer is more than or equal to two pole of photoelectricity on substrate layer
The area of pipe.
Further, the convex refractive layer is trapezoid convex or arc convex.
Further, the reflecting layer is metallic reflector.
A kind of preparation method of imaging sensor provided by the invention, includes the following steps:
S01: shallow trench isolation and photodiode and electricity between shallow trench isolation are formed in substrate layer front
Son receives shift module；
S02: in substrate layer front metallization medium layer；
S03: the side far from substrate layer forms reflecting layer in the dielectric layer, so that reflecting layer corresponds to the area of photodiode
Domain is flat reflecting layer, and the region except corresponding photodiode is the convex refractive layer towards substrate layer.
Further, the step S03 is specifically included:
S031: photoresist and graphical, photoetching offset plate figure of the formation above photodiode are deposited on dielectric layer；
S032: using photoetching offset plate figure as mask, etch media layer, the region except photodiode forms concave surface；
S033: removal photoetching offset plate figure in the surface deposition of reflective layer of dielectric layer, and planarizes, so that reflecting layer is corresponding
The region of photodiode is flat reflecting layer, and the region except corresponding photodiode is the convex refractive towards substrate layer
Layer.
Further, the step S03 further includes forming metal interconnecting layer and connection metal interconnecting layer in the dielectric layer
Through-hole.
Further, further include step S04: reduction process carried out to the back side of substrate layer so that substrate layer with a thickness of
Any number in 2-4 microns.
The present invention forms flat reflecting layer in back side illumination image sensor above photodiode, in non-photodiode
Top forms convex refractive layer, and since substrate layer is with a thickness of 3 microns, and incident depth is greater than near infrared light in the substrate
6 microns, therefore can be directly entered in dielectric layer from the incident light of substrate layer back surface incident, the plane reflection of corresponding photodiode
Layer directly reflexes to incident light in photodiode；Convex refractive layer except corresponding photodiode gathers incident light
Hold together and reflex in photodiode, to improve the quantum efficiency of near infrared light.
Detailed description of the invention
Attached drawing 1 is the structural schematic diagram of imaging sensor in the prior art.
Attached drawing 2 is the structural schematic diagram of substrate layer.
Attached drawing 3 is the structural schematic diagram deposited after photoresist in the dielectric layer.
Attached drawing 4 is the structural schematic diagram that graphical photoresist is formed on dielectric layer.
Attached drawing 5 is the structural schematic diagram after etch media layer.
Attached drawing 6 is the structural schematic diagram after deposition of reflective layer.
Attached drawing 7 is the structural schematic diagram after substrate layer thinning back side.
10 substrates, 11 photodiodes, 12 dielectric layers, 20 substrate layers, 21 photodiodes, 22 transfer gates, 23 float
Diffusion, 24 shallow trench isolations, 25 dielectric layers, 26 reflecting layer, 31 photoresists.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, with reference to the accompanying drawing to specific reality of the invention
The mode of applying is described in further detail.
For imaging sensor in the prior art in order to be collected simultaneously visible light, the thickness of substrate layer is generally 3 microns,
As shown in Fig. 1, back side illumination image sensor includes substrate 10 and the dielectric layer positioned at substrate face, wherein in incident light
Near infrared light is directly entered in dielectric layer later from substrate back is incident, so that near infrared light cannot be effectively by two pole of photoelectricity
Pipe 11 receives.
Please refer to attached drawing 7, a kind of imaging sensor provided by the invention, including substrate 20 and dielectric layer 25, wherein substrate
Layer 20 includes the photodiode 21 and electronic receipt shift module between shallow trench isolation；Specific electronic receipt transfer
Module may include transfer gate 22 and floating diffusion 23, and transfer gate 22 is for realizing the charge generated in photodiode 21
Transfer；Floating grid 23 is for receiving the charge generated from photodiode 21, and shallow trench isolation 24 is for realizing photoelectricity two
Physical isolation between pole pipe 21.The image sensor of that present invention is back side illumination image sensor, i.e., incident light is from far from dielectric layer
Side be incident in substrate layer, the photodiode in substrate layer be photosensitive unit, can be realized the receipts to incident light
Collect and carry out photoelectric conversion, the photon of absorption is converted into electronics, TG transfer gate pole pipe 22, which is realized, to be generated in photodiode
Photoelectron is transferred to floating diffusion 23, and floating diffusion 23 is used for the photoelectron that store collected arrives, and is converted into voltage signal output.
In order to increase the scope of application of imaging sensor in the present invention, the thickness of substrate layer is preferably 3 microns, incident
The absorbability of light is directly related with the thickness of silicon substrate collecting zone, and wavelength is longer, and absorption coefficient is lower, absorbs depth and gets over
Deep, for the Si-Substrate Thickness of back side illumination image sensor in 3um or so, this, which will lead near infrared light, can be directed through silicon substrate entrance
Dielectric layer causes near infrared light to lose, and quantum efficiency reduces.In consideration of it, the present invention separate substrate layer 20 in dielectric layer 25
Side is provided with reflecting layer 26, and it is flat reflecting layer that reflecting layer, which corresponds to the region of photodiode, corresponding photodiode
Except region be towards substrate layer convex refractive layer；Wherein, the region that reflecting layer corresponds to photodiode refers to hanging down
Directly on the direction of substrate layer and dielectric layer, reflecting layer corresponding with photodiode region, in attached drawing 7, substrate layer and Jie
Matter layer is level course, then flat reflecting layer is overlapped in vertical direction with photodiode.The plane of 21 top of photodiode
Directly nearly infrared light reflection enters in photodiode in reflecting layer, increases the incidence of near infrared light；Transfer gate 22 floats and expands
Dissipating 23 waits the convex refractive layer of superstructures setting to reflect the incident ray from 20 back side of substrate layer, by more light
Line reflection, which enters in photodiode 21, realizes photoelectric conversion, improves the assimilation ratio of near infrared light in a silicon substrate, Jin Erzeng
Add the quantum efficiency QE of near infrared light.In order to further increase the assimilation ratio of near infrared light in a silicon substrate, flat reflecting layer
Frontal projected area on substrate layer is more than or equal to the area of photodiode on substrate layer, and the area of photodiode is here
Photodiode is in the area of section being parallel on substrate layer direction.As shown in Fig. 7, substrate layer is parallel with dielectric layer, plane
The area of section of reflecting layer in the horizontal direction is more than or equal to the area of section of photodiode in the horizontal direction, that is, ensures to put down
Face reflecting layer is covering photodiode.
It why is to make because convex refractive layer, which has incident light, gathers effect using convex refractive layer in the present invention
It obtains the incident light after being reflected to be gathered in the photodiode, for the convex shape in convex refractive layer, as long as convex
Rise shape, concrete shape can as described in attached drawing 2 arc convex, or trapezoid convex, triangle and other
Irregular convex shape.The material in reflecting layer can use metallic reflector in the prior art, as long as can be realized reflection
Purpose.
A kind of preparation method of imaging sensor provided by the invention, includes the following steps:
S01: please referring to attached drawing 2, provides substrate 20, is specifically as follows silicon substrate, uses cmos image sensor technique stream
Journey forms photodiode 21 by ion implanting mode in substrate layer front, and by photoetching, the techniques such as etching are in two pole of photoelectricity
Shallow trench isolation 24 is formed between pipe；By the deposit of polycrystalline silicon material, photoetching and etching technics form in silicon substrate front and turn
Grid 22 is moved, floating diffusion 23 is formed in silicon substrate front by photoetching and ion implanting, for receiving photoelectron.
S02: please referring to attached drawing 2, the metallization medium layer 25 in substrate layer front；
S03: the side far from substrate layer forms reflecting layer in the dielectric layer, so that reflecting layer corresponds to the area of photodiode
Domain is flat reflecting layer, and the region except corresponding photodiode is the convex refractive layer towards substrate layer, is specifically included:
S031: please referring to attached drawing 3 and 4, and photoresist 31 is deposited on dielectric layer simultaneously graphically, is formed and is located at photodiode
The photoetching offset plate figure of top；For convenience, the region except photodiode is known as non-photodiode area.
S032: please referring to attached drawing 5, using photoresist as mask, etch media layer, by the isotropism of etching, in medium
It is located at the region except photodiode in layer 25 and forms concave surface pattern；
S033: please referring to attached drawing 6, removes photoetching offset plate figure, the surface deposition of reflective layer 26 of dielectric layer after the etch,
And planarize, so that the region that reflecting layer corresponds to photodiode is flat reflecting layer, the region except corresponding photodiode
For towards the convex refractive layer of substrate layer；I.e. here convex surface refers to the convex surface relative to substrate layer.In addition to this, using normal
The cmos image sensor technique of rule forms first layer metal interconnection layer in dielectric layer 25, forms through-hole and the second layer later
Metal interconnection layer, through-hole is for connecting first layer metal interconnection layer and second layer metal interconnection layer (not shown), here
Metal interconnecting layer and via layer are used to draw in other circuits in floating diffusion and imaging sensor.
S04: please referring to attached drawing 7, is adhered on slide glass after silicon substrate 20 is overturn, and carries out that work is thinned to the silicon substrate back side
Skill, until Si-Substrate Thickness is in 3 microns.
The present invention forms flat reflecting layer in back side illumination image sensor above photodiode, in non-photodiode
Top forms convex refractive layer, and since substrate layer is with a thickness of 3 microns, and incident depth is greater than near infrared light in the substrate
6 microns, therefore can be directly entered in dielectric layer from the incident light of substrate layer back surface incident, the plane reflection of corresponding photodiode
Layer directly reflexes to incident light in photodiode；Convex refractive layer except corresponding photodiode gathers incident light
Hold together and reflex in photodiode, to improve the quantum efficiency of near infrared light.
The above description is only a preferred embodiment of the present invention, and the embodiment is not intended to limit patent protection of the invention
Range, thus it is all with the variation of equivalent structure made by specification and accompanying drawing content of the invention, it similarly should be included in this
In the protection scope of invention appended claims.
Claims (10)
1. a kind of imaging sensor, which is characterized in that including substrate layer and dielectric layer, wherein the substrate layer includes being located at shallowly
Photodiode and electronic receipt shift module between trench isolations；Side in the dielectric layer far from substrate layer includes anti-
Layer is penetrated, and it is flat reflecting layer that the reflecting layer, which corresponds to the region of photodiode, the region except corresponding photodiode is
Towards the convex refractive layer of substrate layer.
2. a kind of imaging sensor according to claim 1, which is characterized in that the electronic receipt shift module includes turning
Move grid and floating diffusion.
3. a kind of imaging sensor according to claim 1, which is characterized in that the substrate layer with a thickness of 2-4 microns
In any number.
4. a kind of imaging sensor according to claim 1, which is characterized in that the flat reflecting layer is on substrate layer
Frontal projected area is more than or equal to the area of photodiode on substrate layer.
5. a kind of imaging sensor according to claim 1, which is characterized in that the convex refractive layer be trapezoid convex or
Person's arc convex.
6. a kind of imaging sensor according to claim 1, which is characterized in that the reflecting layer is metallic reflector.
7. a kind of preparation method of imaging sensor, which comprises the steps of:
S01: shallow trench isolation and photodiode between shallow trench isolation are formed in substrate layer front and electronics connects
Receive shift module；
S02: in substrate layer front metallization medium layer；
S03: the side far from substrate layer forms reflecting layer in the dielectric layer, so that the region that reflecting layer corresponds to photodiode is
Flat reflecting layer, corresponding to the region except photodiode is the convex refractive layer towards substrate layer.
8. preparation method according to claim 7, which is characterized in that the step S03 is specifically included:
S031: photoresist and graphical, photoetching offset plate figure of the formation above photodiode are deposited on dielectric layer；
S032: using photoetching offset plate figure as mask, etch media layer, the region except photodiode forms concave surface；
S033: removal photoetching offset plate figure in the surface deposition of reflective layer of dielectric layer, and planarizes, so that reflecting layer corresponds to photoelectricity
The region of diode is flat reflecting layer, and the region except corresponding photodiode is the convex refractive layer towards substrate layer.
9. preparation method according to claim 7, which is characterized in that the step S03 further includes being formed in the dielectric layer
The through-hole of metal interconnecting layer and connection metal interconnecting layer.
10. preparation method according to claim 7, which is characterized in that further include step S04: to the back side of substrate layer into
Row reduction process so that substrate layer with a thickness of any number in 2-4 microns.
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| CN111146221A (en) * | 2019-11-26 | 2020-05-12 | 上海集成电路研发中心有限公司 | Wide-spectrum image sensor structure and forming method |
| CN111769131A (en) * | 2020-06-24 | 2020-10-13 | 中国电子科技集团公司第四十四研究所 | Back-illuminated CCD (charge coupled device) for enhancing near-infrared quantum efficiency and manufacturing method thereof |
| US11171172B2 (en) * | 2019-07-16 | 2021-11-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor and method of forming the same |
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