CN110361940B - Method for optimizing temperature of hot plate of gluing developing machine on line - Google Patents
Method for optimizing temperature of hot plate of gluing developing machine on line Download PDFInfo
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- CN110361940B CN110361940B CN201910777249.6A CN201910777249A CN110361940B CN 110361940 B CN110361940 B CN 110361940B CN 201910777249 A CN201910777249 A CN 201910777249A CN 110361940 B CN110361940 B CN 110361940B
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- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
- G03F7/70891—Temperature
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Abstract
The invention discloses a method for optimizing the temperature of a hot plate of a gluing developing machine on line, which comprises the steps of sending a control wafer into an exposure machine, and reading the surface height of the control wafer by utilizing the gaseous state detection function (AGILE) of the exposure machine; coating photoresist on the control wafer, soft baking by using a hot plate of a coating developing machine, sending the control wafer into an exposure machine, and reading the surface height of the control wafer by using the gas detection function of the exposure machine; the actual thickness of the photoresist on the control wafer can be calculated through the two height differences, the temperature difference between the hot plate and the target temperature is calculated through a photoresist soft baking temperature-thickness curve and real-time compensation is carried out, and the temperature of the hot plate of the gluing and developing machine is calibrated in real time through the gas detection function of the exposure machine.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a method for calibrating the temperature of a hot plate of a gluing and developing machine on line.
Background
Photolithography is a process of transferring a pattern previously prepared on a reticle onto a substrate by exposure using the principle of photochemical reaction. The principle of patterning is that a substrate is coated with a photoresist in a paste developer, and the exposed areas are photochemically reacted in an exposure machine and subsequently removed (or left) during development to obtain the desired pattern. Because the photoresist is coated on the substrate in a liquid state, the photoresist needs to enter a hot plate of a gluing developing machine for soft baking after coating is finished, and the organic solvent in the photoresist is removed, so that the photoresist forms a photoresist solid film with uniform thickness.
In the photolithography exposure process, as shown in fig. 1, the pre-exposure soft baking and the pre-development baking are important processes in the photolithography process, and greatly affect the size of the photoresist on the wafer and the thickness of the photoresist film.
In addition, the stability and uniformity of the temperature of the hotplate greatly affect the average and uniformity of the photoresist thickness on the substrate. After exposure, the photo-resist on the substrate undergoing photochemical reaction also needs to enter a hot plate of a gumming and developing machine for pre-development baking so as to undergo photochemical chain reaction and reach the required pattern size. The stability and uniformity of the hot plate temperature greatly affect the average value and uniformity of the pattern size. Therefore, the temperature stability and uniformity of the hot plate of the gumming and developing machine are important indicators in the photolithography process.
In the traditional process, the temperature of a hot plate of a gluing and developing machine is calibrated only in a maintenance period through a standard sheet, and the time interval is long and much time is consumed.
Disclosure of Invention
The technical problem that this application will be solved provides a method of stability and homogeneity of calibration rubber coating developing machine hot plate temperature in real time in process of production.
In order to solve the technical problem, the application provides a method for optimizing the temperature of a hot plate of a gluing and developing machine on line, which is characterized by comprising the following steps of: selecting a plurality of control wafers, coating the same photoresist on a gluing developing machine, soft baking the control wafers on a hot plate at different temperatures, and measuring the average photoresist thickness of each control wafer through a film thickness measuring machine to obtain a photoresist soft baking temperature thickness curve; secondly, the control wafer is sent into an exposure machine, and the surface height of the control wafer is read by utilizing the gas detection function of the exposure machine; thirdly, coating photoresist on the control wafer, soft baking by using a hot plate of a gluing developing machine, then sending the control wafer into an exposure machine, and reading the surface height of the control wafer by using the gas detection function of the exposure machine again; and step four, calculating the actual average thickness of the photoresist on the control wafer through the two height differences, calculating the temperature change of the hot plate through the photoresist soft baking temperature thickness curve in the step one, and compensating the temperature change with the target temperature in real time.
Preferably, in the second step, after the surface height of the control wafer is read, the area of the control wafer is divided into a plurality of areas, an average height value of each area is measured, and the average height value of each area is divided by the number of the plurality of areas to obtain a first average thickness value.
Preferably, in the third step, after the soft baking is performed by using the hot plate of the glue spreading developing machine, the control wafer is sent into the exposure machine, the surface height of the control wafer is read by using the gas detection function of the exposure machine again, then the area of the control wafer is divided into a plurality of areas, the average height value of each area is measured, and the average height value of each area is divided by the number of the plurality of areas to obtain the second average thickness value.
Preferably, in the fourth step, after calculating the actual average thickness of the photoresist, subtracting the actual average thickness of the photoresist from the thickness of the target photoresist to obtain the thickness difference of the photoresist caused by the temperature change of the hot plate, calculating the average temperature variation of the hot plate according to the temperature and thickness curve of the photoresist soft baking in the first step, correcting the temperature variation to the hot plate of the glue spreading developing machine, and adjusting the average temperature of the hot plate.
Preferably, after calculating the average temperature variation of the hot plate, dividing the area of the control wafer into a plurality of areas, calculating the area temperature variation of the hot plate according to the photoresist soft baking temperature thickness curve in the first step, correcting the area temperature variation through a temperature control sensor of a corresponding area of the hot plate, and adjusting the area temperature of the hot plate.
Preferably, the control wafer is a silicon wafer.
Preferably, the number of the control wafers is at least 10.
Preferably, the control wafer soft baking temperature step is 0.5-2 ℃.
Preferably, the height read by the gas state detection function is the relative height from the surface of the control wafer to the wafer carrier of the exposure machine.
Preferably, the control wafer area is divided into at least 6 zones, each zone containing a temperature controlled sensor of a hot plate.
Preferably, the gas detection function in the exposure machine is that the wafer is in the exposure machine, nitrogen is sprayed to the surface of the wafer through a gas detection sensor, and the physical height of the surface of the wafer in the exposure plane is measured through the variation of gas pressure.
The invention uses the gaseous detection function (AGILE) of the exposure machine to read the surface height of the control wafer by sending the control wafer into the exposure machine; coating photoresist on the control wafer, soft baking by using a hot plate of a coating developing machine, sending the control wafer into an exposure machine, and reading the surface height of the control wafer by using the gas detection function of the exposure machine; the actual thickness of the photoresist on the control wafer can be calculated through the two height differences, the temperature difference between the hot plate and the target temperature is calculated through a photoresist soft baking temperature-thickness curve and real-time compensation is carried out, and the temperature of the hot plate of the gluing and developing machine is calibrated in real time through the gas detection function of the exposure machine.
Drawings
FIG. 1 is a schematic illustration of a lithography flow.
FIG. 2 is a schematic view of the hot plate of the gumming development machine of the present invention.
FIG. 3 is a schematic diagram of a temperature and thickness curve of a soft bake process for a photoresist according to the present invention.
FIG. 4 is a schematic view of the gas detection function of the exposure machine of the present invention.
FIG. 5 is a schematic view showing the height of the function quantity measuring and controlling sheet for gas detection according to the present invention.
Fig. 6 is a schematic diagram of a divided control board area according to an embodiment of the invention.
Description of the reference numerals
1 cylinder 2 linear guide rail
3 rodless cylinder 4 defogging device
5 exhaust monitor 6 speed regulator
7 controller 8 level sensor
9 gaseous state detection sensor 10 lens
11 Photoresist
Detailed Description
The following describes a preferred embodiment of the present invention in detail with reference to the accompanying drawings. It is to be understood that the invention is not limited to the particular embodiments described above, in that devices and structures not described in detail are understood to be implemented in a manner common in the art; those skilled in the art can make many possible variations and modifications to the disclosed embodiments, or modify equivalent embodiments, without affecting the spirit of the invention, using the methods and techniques disclosed above, without departing from the scope of the invention.
Fig. 2 is a schematic diagram of a hot plate of a prior art glue spreading developing machine, which comprises a cylinder 1, a linear guide rail 2, a rodless cylinder 3, a demisting device 4, a waste discharge monitor 5, a speed regulator 6 and a controller 7. An important maintenance of the hotplate soft bake chamber is its exhaust duct, since most of the solvent evaporates during baking, which, if not smooth, affects the uniformity of the thickness. In addition, the position of arm conveying is also very important, and the hot plate face is provided with positioning columns, and the positioning columns with slopes can help the wafer to stay on the electric heating plate correctly, but if the position of arm conveying is not right, the wafer is partially on the electric heating plate, and partially on the positioning columns, so that the wafer is heated unevenly, and the thickness is influenced. The stability and uniformity of the hot plate temperature greatly affect the average value and uniformity of the pattern size. Therefore, the temperature stability and uniformity of the hot plate of the gumming and developing machine are important indicators in the photolithography process.
The invention discloses a method for optimizing the temperature of a hot plate of a gluing and developing machine on line, which comprises the following steps:
step one, as shown in fig. 3, selecting N control wafers, coating the same photoresist on a coating developing machine, and soft baking the control wafers on a hot plate at different temperatures. Measuring the average photoresist thickness of each control wafer by a film thickness measuring machine to obtain a photoresist soft baking temperature-thickness curve H ═ aT2+ b, the photoresist soft baking temperature-thickness curve is an approximate parabola, and it can be seen that the higher the photoresist soft baking temperature is, the thinner the photoresist thickness is; the lower the photoresist soft bake temperature, the thicker the photoresist thickness.
During measurement, the photoresist can be vertically irradiated, reflected light is subjected to light splitting treatment, and light intensity data after light splitting is collected; and comparing with the measured sample to calculate the thickness value of the photoresist film. The photoresist can also be obliquely irradiated, and the angle distribution of the surface reflected light of the photoresist can be measured; and obtaining the thickness value of the photoresist film by utilizing the reflectivity angle distribution and the final fitting curve. Meanwhile, in order to determine the thickness and uniformity of the photoresist film, a diagonal measurement may be generally performed.
The control wafer is a wafer with a smooth surface, and the surface can be silicon, oxide, nitride and the like. In addition, because the surface of the wafer substrate is always covered with water molecules, and the water molecules react with the silicon wafer to generate silanol groups with strong polarity, the silanol groups can be removed only by high temperature of 600 ℃, and when the wafer is cooled, the water molecules immediately react with the silicon wafer to generate the silanol groups. At this time, the wafer surface can be heated to remove water, and then a layer of substrate is added.
In the application, N control wafers are selected for soft baking, preferably, N is greater than 10, and the more the number of the control wafers is, the more accurate the obtained photoresist soft baking temperature-thickness curve is.
The soft baking aims to remove the solvent in the photoresist after the photoresist coating is finished, and can also improve the developing speed ratio and the contrast of the photoresist in a non-irradiation area and an irradiation area, thereby improving the resolution, releasing the stress generated by high-speed rotation in the photoresist coating stage and preventing the cracking of the photoresist. In addition, according to different characteristics of the photoresist, the soft baking temperature is between 80 ℃ and 130 ℃, and in the application, the step length of the soft baking temperature of each control wafer is controlled between 0.5 ℃ and 2 ℃.
The heating method of soft baking can be divided into three methods of conduction, convection and radiation. Both conduction and convection can reach stable temperatures and are faster in conduction. The radiation method is heating by infrared rays or microwaves, and has the advantages of high heating speed and difficult temperature control and stable temperature due to the phenomenon of over-heating caused by over-rapid heating. The most common electric heating plate conduction heating method is adopted at present. Because the conduction method can obtain stable temperature, and the heating speed is between the radiation method and the convection method.
And step two, sending the control wafer into an exposure machine, and reading the surface height of the control wafer by utilizing the gaseous state detection function (AGILE) of the exposure machine.
As shown in fig. 4, the exposure machine includes a level sensor 8, a gas detection sensor 9, and a lens 10.
The gas detection (age) function in the exposure machine is to inject nitrogen gas to the surface of the wafer photoresist 11 through the gas detection sensor 9 in the exposure machine, and measure the physical height of the wafer surface in the exposure plane through the variation of the gas pressure, as shown in fig. 5.
Further, as shown in fig. 6, the control panel area may be divided into M regions, an average height value of each region is measured, and the average height value of each region is divided by the number of the regions to obtain a first average thickness value, as shown in fig. 6, the average height of each region is h1，h2，h3…hMAverage thickness of
When dividing the area, firstly, the middle part of the wafer is divided into a part of circular area, and then the rest annular part is divided evenly. As shown in fig. 6, the wafer is divided into 9 regions.
Generally, the thickness of the thin film refers to the distance between the substrate surface and the thin film surface, and in fact, the surface of the thin film is uneven and discontinuous, and pinholes, microcracks, fibrils, impurities, lattice defects, surface adsorbed molecules, and the like exist inside the thin film.
In the application, the height read by the gas detection function is the relative height from the surface of the control wafer to the wafer carrying platform of the exposure machine.
And step three, coating photoresist on the control wafer, soft baking by using a hot plate of a gluing developing machine, then sending the control wafer into an exposure machine, and reading the surface height of the control wafer by using the gas detection function of the exposure machine again.
Further, after the surface height of the control wafer is read by utilizing the gas state detection function of the exposure machine, the area of the control wafer is divided into M areas, and the average height value H of each area is measured1，H2，H3…HMAnd dividing the average height value of each region by the number of the regions to obtain a second average thickness value
Preferably, M>Each zone contains a temperature controlled sensor of a hot plate.
Step four, passing the height difference between the first average height value and the second average height value
The actual average thickness H of the photoresist on the control wafer can be calculated1-h1，H2-h2…Hm-hmIs the actual average thickness of the photoresist in the corresponding region.
Further, after calculating the actual average thickness of the photoresist, setting the target photoresist thickness as HTThe difference in the average thickness of the photoresist due to the temperature change of the hot plate is
And (4) calculating the average temperature change delta T of the hot plate according to the photoresist soft baking temperature-thickness curve in the first step.
Further, setting the target photoresist thickness to be HTThe difference in regional photoresist thickness due to the temperature change of the hot plate is
Calculating the regional temperature change Delta T of the hot plate through a soft baking temperature-thickness curve1，△T2…△TM. Then, correcting the temperature change delta T into a hot plate A of a gluing and developing machine, and adjusting the average temperature of the hot plate; change the zone temperature by Delta T1，△T2…△TMAnd correcting through the temperature control sensor 3 in the corresponding area of the hot plate to adjust the temperature of the area of the hot plate. By analogy, the hot plate B, C, D, E … of the gumming developer is calibrated.
The invention reads the surface height of the control wafer by utilizing the gaseous state detection function (AGELE) of the exposure machine; the actual thickness of the photoresist on the control wafer can be calculated through the two height differences, and the difference between the temperature of the hot plate and the target temperature is calculated through a photoresist soft baking temperature-thickness curve and real-time compensation is carried out. The invention solves the problem of the stability and the uniformity of the real-time calibration of the temperature of the hot plate of the gluing and developing machine in the production process.
The above are merely preferred embodiments of the present invention, and are not intended to limit the present invention. Various modifications and alterations to this invention will become apparent to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (11)
1. A method for optimizing the temperature of a hot plate of a gluing and developing machine on line is characterized by comprising the following steps:
selecting a plurality of control wafers, coating the same photoresist on a gluing developing machine, soft baking the control wafers on a hot plate at different temperatures, and measuring the average photoresist thickness of each control wafer through a film thickness measuring machine to obtain a photoresist soft baking temperature thickness curve;
secondly, the control wafer is sent into an exposure machine, and the surface height of the control wafer is read by utilizing the gas detection function of the exposure machine;
thirdly, coating photoresist on the control wafer, soft baking by using a hot plate of a gluing developing machine, then sending the control wafer into an exposure machine, and reading the surface height of the control wafer by using the gas detection function of the exposure machine again;
and step four, calculating the actual average thickness of the photoresist on the control wafer through the two height differences, calculating the temperature change of the hot plate through the photoresist soft baking temperature thickness curve in the step one, and compensating the temperature change with the target temperature in real time.
2. A method for on-line optimizing the temperature of a hot plate of a gumming developing machine as in claim 1, wherein in the second step, after the height of the surface of the control wafer is read, the area of the control wafer is divided into a plurality of areas, the average height value of each area is measured, and the average height value of each area is divided by the number of the plurality of areas to obtain the first average thickness value.
3. A method for on-line optimizing the temperature of a hot plate of a glue spreading developing machine as claimed in claim 1, wherein in the third step, after the soft baking process using the hot plate of the glue spreading developing machine, the control wafer is fed into the exposure machine, the surface height of the control wafer is read again by using the gas detection function of the exposure machine, then the area of the control wafer is divided into a plurality of areas, the average height of each area is measured, and the average height of each area is divided by the number of the plurality of areas to obtain the second average thickness.
4. The method for on-line optimizing the temperature of a hot plate of a glue spreading developing machine as claimed in claim 1, wherein in the fourth step, after calculating the actual average thickness of the photoresist, the actual average thickness of the photoresist is subtracted from the thickness of the target photoresist to obtain the thickness difference of the photoresist caused by the temperature change of the hot plate, the average temperature variation of the hot plate is calculated through the temperature and thickness curve of the photoresist soft baking in the first step, the temperature variation is corrected into the hot plate of the glue spreading developing machine, and the average temperature of the hot plate is adjusted.
5. The method for on-line optimizing the temperature of a hot plate of a gluing and developing machine as claimed in claim 4, wherein after the average temperature variation of the hot plate is calculated, the area of the control wafer is divided into a plurality of areas, the area temperature variation of the hot plate is calculated through the photoresist soft baking temperature thickness curve in the first step, and the area temperature variation is corrected through a temperature control sensor of the corresponding area of the hot plate to adjust the area temperature of the hot plate.
6. A method for on-line optimization of the hot plate temperature of a paste developer according to any of claims 1 to 5, characterized in that the control wafer is a silicon wafer.
7. A method for on-line optimization of the hot plate temperature of a paste developer according to any of claims 1 to 5, characterized in that the number of control wafers is at least 10.
8. A method for on-line optimizing the hot plate temperature of a paste developer according to any of claims 1 to 5, wherein the control wafer soft bake temperature step size is 0.5 ℃ to 2 ℃.
9. A method for on-line optimizing the temperature of a hot plate of a paste dispenser according to any of claims 1 to 5, wherein the height read by the gas detection function is the relative height from the surface of a control wafer to a wafer carrier of an exposure machine.
10. A method for on-line optimizing the temperature of a hot plate of a paste dispenser according to any of claims 2 to 3, wherein the control wafer area is divided into at least 6 zones, each zone containing a temperature-controlled sensor of the hot plate.
11. A method for on-line optimizing the temperature of a hot plate of a glue spreading developing machine according to any one of claims 1 to 5, wherein the gas detection function in the exposure machine is to measure the physical height of the wafer surface in the exposure plane by the variation of gas pressure in the exposure machine for the wafer by spraying nitrogen gas to the wafer surface through a gas detection sensor.
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| CN113391520A (en) * | 2021-05-14 | 2021-09-14 | 上海华力集成电路制造有限公司 | Coating method of photoresist and photoetching method thereof |
| CN113970880B (en) * | 2021-11-23 | 2024-05-28 | 江苏凯威特斯半导体科技有限公司 | Cleaning method for semiconductor photoresist |
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| US6362116B1 (en) * | 2000-02-09 | 2002-03-26 | Advanced Micro Devices, Inc. | Method for controlling photoresist baking processes |
| US20050134816A1 (en) * | 2003-12-22 | 2005-06-23 | Asml Netherlands B.V. | Lithographic apparatus, method of exposing a substrate, method of measurement, device manufacturing method, and device manufactured thereby |
| KR20060121563A (en) * | 2005-05-24 | 2006-11-29 | 삼성전자주식회사 | Spinner used in semiconductor fabrication measuring film thickness of photoresist and method for measuring film thickness of photoresist using the same |
| CN101900954B (en) * | 2009-06-01 | 2012-07-25 | 和舰科技(苏州)有限公司 | Slope monitoring method for post-exposure baking (PEB) hot plate of developer |
| CN102073214B (en) * | 2009-11-23 | 2013-03-06 | 无锡华润上华半导体有限公司 | Heat treatment unit of gluing developing machine |
| CN102566284A (en) * | 2010-12-08 | 2012-07-11 | 无锡华润上华科技有限公司 | Test method for temperature evenness of hot plate |
| CN106125520B (en) * | 2016-08-12 | 2020-04-28 | 京东方科技集团股份有限公司 | Method for performing photoresist prebaking by using photoresist prebaking device |
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