CN110361940A - The method of on-line optimization coating developing machine hot plate temperature - Google Patents
The method of on-line optimization coating developing machine hot plate temperature Download PDFInfo
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- CN110361940A CN110361940A CN201910777249.6A CN201910777249A CN110361940A CN 110361940 A CN110361940 A CN 110361940A CN 201910777249 A CN201910777249 A CN 201910777249A CN 110361940 A CN110361940 A CN 110361940A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
- G03F7/70891—Temperature
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Abstract
The invention discloses a kind of methods of on-line optimization coating developing machine hot plate temperature, and a control wafer is sent into exposure machine, reads the control wafer apparent height using the gaseous state detecting function (AGILE) of exposure machine；The coating photoresist in the control wafer, and it is soft roasting using the progress of coating developing machine hot plate, which is sent into exposure machine, the gaseous state detecting function of exposure machine is utilized to read control wafer apparent height；Difference in height can calculate actual (real) thickness of the photoresist in control wafer twice, pass through the soft roasting temperature-thickness curve of photoresist, it calculates the hot plate temperature and target temperature difference and carries out real-time compensation, pass through the gaseous state detecting function real time calibration coating developing machine hot plate temperature of exposure machine.
Description
Technical field
The present invention relates to field of semiconductor manufacture, especially a kind of method of on-line calibration coating developing machine hot plate temperature.
Background technique
Photoetching is that figure of the prior preparation on mask is transferred to substrate by exposure using photochemical reaction principle
On process.The principle for forming figure is that substrate is coated with photoresist in coating developing machine, and exposure area is sent out in exposure machine
Third contact of a total solar or lunar eclipse chemical reaction is removed (or leaving) in subsequent development to obtain required figure.Since photoresist is liquid coating
It is soft roasting on substrate, needing the hot plate into coating developing machine to carry out after the completion of coating, organic solvent therein is removed, its shape is made
At the photoresist solid film that thickness is uniform.
In photolithographic exposure technique, such as Fig. 1, baking is important procedure in photoetching process, pole before soft roasting and development before exposure
Size and photoresist film thickness of the big influence photoresist on wafer.
In addition, the stability and homogeneity of hot plate temperature will greatly affect on substrate the average value of photoresist thickness and
One property.After exposition, photochemically reactive photoresist occurs on substrate to be also required to be shown into the hot plate of coating developing machine
It is toasted before shadow, brings it about photochemistry chain reaction, reach required dimension of picture.The stability and homogeneity meeting of hot plate temperature
The average value and homogeneity of strong influence dimension of picture.Therefore, the stability and homogeneity of coating developing machine hot plate temperature are
Important indicator in lithographic process.
In traditional handicraft, coating developing machine hot plate temperature is only calibrated in defects liability period by standard film, interval time
It is long and time-consuming more.
Summary of the invention
The technical problem to be solved by the application is to provide a kind of real time calibration coating developing machine hot plates in process of production
The method of the stability and homogeneity of temperature.
In order to solve the above-mentioned technical problem, this application provides a kind of sides of on-line optimization coating developing machine hot plate temperature
Method, which comprises the following steps: step 1 chooses multiple control wafers in coating developing machine and is coated with identical photoresist,
It is soft roasting using different temperature progress on hot plate, it is average that the photoresist thickness per a piece of control wafer is measured by film thickness measurement platform
Value, to obtain the soft roasting temperature thickness curve of photoresist；Control wafer is sent into exposure machine by step 2, is visited using the gaseous state of exposure machine
Brake reads the control wafer apparent height；Step 3, the coating photoresist in control wafer, and carried out using coating developing machine hot plate
It is soft roasting, the control wafer is then sent into exposure machine, reads control wafer apparent height using the gaseous state detecting function of exposure machine again；Step
Four, actual average thickness of the photoresist in control wafer can be calculated by difference in height twice, pass through the photoresist in step 1
Soft roasting temperature thickness curve calculates hot plate temperature variation, and target temperature difference and carries out real-time compensation.
Preferably, in step 2, after reading control wafer apparent height, which is divided into several regions,
The average height value in each region is measured, and the average height value in each region is obtained divided by the quantity in several regions
One average thickness values.
Preferably, in step 3, after carrying out soft bake using coating developing machine hot plate, which is sent into exposure machine, then
The secondary gaseous state detecting function using exposure machine reads control wafer apparent height, and the control wafer area is divided into several regions later,
The average height value in each region is measured, and the average height value in each region is obtained divided by the quantity in several regions
Two average thickness values.
Preferably, in step 4, after calculating photoresist actual average thickness, photoetching is subtracted with the thickness of target photoresist
Glue actual average thickness obtains photoresist thickness difference caused by changing due to hot plate temperature, soft roasting by the photoresist in step 1
Temperature thickness curve calculates the mean temperature variable quantity of hot plate, temperature variation is corrected in coating developing machine hot plate, adjusts
Whole hot plate mean temperature.
Preferably, after the mean temperature variable quantity for calculating hot plate, which is divided into several regions, is passed through
The soft roasting temperature thickness curve of photoresist in step 1, calculates the regional temperature variable quantity of hot plate, by regional temperature variable quantity
It is corrected by hot plate corresponding region temperature control inductor, adjusts thermal panel area temperature.
Preferably, the control wafer is Silicon Wafer.
Preferably, the quantity of the control wafer is at least 10.
Preferably, soft a length of 0.5 DEG C to 2 DEG C of the roasting temperature step of the control wafer.
Preferably, the height that the gaseous state detecting function is read, for control wafer surface to exposure machine wafer carrier relative altitude.
Preferably, which is divided at least six region, each region includes the temperature control induction of hot plate
Device.
Preferably, the gaseous state detecting function in the exposure machine is wafer in exposure machine, passes through gaseous state detection sensor
Nitrogen is sprayed to crystal column surface, and the physical height of the crystal column surface in plane of exposure is measured by gas pressure change.
The present invention reads this using the gaseous state detecting function (AGILE) of exposure machine by the way that a control wafer is sent into exposure machine
Control wafer apparent height；The coating photoresist in the control wafer, and it is soft roasting using the progress of coating developing machine hot plate, which is sent into and is exposed
Ray machine reads control wafer apparent height using the gaseous state detecting function of exposure machine；Difference in height can calculate photoresist and control twice
The actual (real) thickness of on piece is calculated the hot plate temperature and is gone forward side by side with target temperature difference by the soft roasting temperature-thickness curve of photoresist
Row real-time compensation passes through the gaseous state detecting function real time calibration coating developing machine hot plate temperature of exposure machine.
Detailed description of the invention
Fig. 1 is photolithographic procedures schematic diagram.
Fig. 2 is coating developing machine hot plate schematic diagram of the invention.
Fig. 3 is the soft roasting temperature thickness curve schematic diagram of photoresist of the invention.
Fig. 4 is exposure machine gaseous state detecting function schematic diagram of the invention.
Fig. 5 is that the present invention passes through gaseous state detecting function measurement control wafer high-level schematic.
Fig. 6 is the schematic diagram after the control plate suqare of one embodiment of the invention divides.
Description of symbols
1 cylinder, 2 linear guides
3 rodless cylinder, 4 demister
5 waste discharge monitor, 6 governor
7 controller, 8 horizon sensor
9 gaseous state detection sensor, 10 lens
11 photoresists
Specific embodiment
It elaborates with reference to the accompanying drawing to a preferred embodiment of the present invention.It is to be appreciated that the present invention not office
It is limited to above-mentioned particular implementation, devices and structures not described in detail herein should be understood as with the common side in this field
Formula is practiced；Anyone skilled in the art, it is without departing from the scope of the technical proposal of the invention, all available
The methods and technical content of the disclosure above makes many possible changes and modifications to technical solution of the present invention, or is revised as equivalent
The equivalent embodiment of variation, this is not affected the essence of the present invention.
Fig. 2 is the coating developing machine hot plate schematic diagram of the prior art, which includes cylinder 1, linear guides 2,
Rodless cylinder 3, demister 4, waste discharge monitor 5, governor 6, controller 7.The important maintenance of the soft roasting cavity of hot plate is it
Exhaust pipe if exhaust pipe has some setbacks, will affect the equal of thickness because most of solvent can evaporate in baking
Even property.In addition the position of arm conveying is also extremely important, and hot plate has positioning column on face, these have the positioning column of gradient that can help
Crystallization in motion circle correctly rests on electric hot plate, but if arm conveying position it is not right, wafer will part on electric hot plate,
Part rides on positioning column, causes wafer uneven heating even, influences thickness.The stability and homogeneity of hot plate temperature can be great
Influence the average value and homogeneity of dimension of picture.Therefore, the stability and homogeneity of coating developing machine hot plate temperature are optical gravings
Important indicator in journey.
The method of on-line optimization coating developing machine hot plate temperature of the invention, comprising the following steps:
Step 1 is coated with identical photoresist in coating developing machine as shown in figure 3, choosing N piece control wafer, uses on hot plate
Different temperature carries out soft roasting.The photoresist thickness average value per a piece of control wafer is measured by film thickness measurement platform, to obtain
The soft roasting temperature-thickness curve H=aT of photoresist2+ b, the soft roasting temperature-thickness curve of the photoresist are near parabolic, can be seen
Out, the soft roasting temperature of photoresist is higher, and photoresist thickness is thinner；The soft roasting temperature of photoresist is lower, and photoresist thickness is thicker.
When measurement, vertical irradiation can be carried out to photoresist, reflected light passes through light-splitting processing, the light intensity after collecting its light splitting
Degree evidence；And compared with measurement sample, photoresist film thickness value is calculated.Oblique illumination, measurement can also be carried out to photoresist
The angular distribution of its surface reflection；Using reflectivity angular distribution and final matched curve, photoresist film thickness value is obtained.Together
When, in order to judge photoresist film thickness and its homogeneity, it is however generally that point-to-point measurement can be carried out using diagonal way.
The control wafer is the wafer of surfacing, and surface can be silicon, oxide, nitride etc..Further, since wafer serves as a contrast
It is often covered with hydrone on bottom surface and Silicon Wafer effect generates the very strong silanol group of polarity, silanol group needs 600 DEG C of high temperature
It could remove, and when wafer is cooling, hydrone reacts with Silicon Wafer at once and generates silanol group.It can first heat at this time
Crystal column surface moisture is removed, one layer of ground is added.
In this application, it chooses N piece control wafer and carries out soft bake, it is preferable that N is greater than 10, and control wafer quantity is more, obtained photoetching
The soft roasting temperature-thickness curve of glue is more accurate.
Soft roasting purpose is the solvent removed in photoresist after the completion of light blockage coating, can also promote non-irradiated area and irradiation
The developing rate ratio and contrast of area's photoresist to improve resolution, while also being discharged in light blockage coating stage high speed rotation
The stress of generation prevents the cracking of photoresist.In addition, according to photoresist characteristic difference, soft roasting temperature 80 DEG C~130 DEG C it
Between, in the application, per the soft roasting temperature step size controlling of a piece of control wafer between 0.5 DEG C~2 DEG C.
Soft roasting heating means can be divided into conduction, convection current, three kinds of radiation.Conduction and convection current can reach stable temperature
Degree, and it is very fast with conduction pattern.Radiation method is with infrared ray or microwave heating, and advantage is that heating speed is fast, the disadvantage is that due to
Heating excessively sharply, often there is the phenomenon that over-heating, is difficult to control constant temperature, and temperature is not easy to reach stable state.It is the most frequently used at present
Electric hot plate conduction heating method.Because conducting the available stable temperature of method, and heating speed is between radiation method and convection current
Between method.
Control wafer is sent into exposure machine by step 2, reads the control wafer table using the gaseous state detecting function (AGILE) of exposure machine
Face height.
As shown in figure 4, the exposure machine includes horizon sensor 8, gaseous state detection sensor 9, lens 10.
Gaseous state in the exposure machine detects (AGILE) function, is wafer in exposure machine, passes through gaseous state detection sensor
9 injection nitrogen measure the physical height of the crystal column surface in plane of exposure by gas pressure change to 11 surface of wafer photoresist,
As shown in Figure 5.
Further, as shown in fig. 6, the control wafer area can be divided into M region, being averaged for each region is measured
Height value, and the average height value in each region is obtained into the first average thickness values divided by the quantity in several regions, such as Fig. 6 institute
Show, the average height in each region is h1, h2, h3…hM, average thickness
When dividing region, a part of border circular areas will be marked off in the middle part of wafer first, then put down remaining annular section
Divide.As shown in fig. 6, wafer is divided into 9 regions.
Under normal conditions, the thickness of film refers to the distance of substrate surface and film surface, and in fact, the table of film
Face is out-of-flatness, discontinuous, and there is the suctions of pin hole, micro-crack, fiber filament, impurity, lattice defect and surface inside film
Attached molecule etc..
In the application, the height that the gaseous state detecting function is read is that control wafer surface is relatively high to exposure machine wafer carrier
Degree.
Step 3, the coating photoresist in control wafer, and it is soft roasting using the progress of coating developing machine hot plate, then the control wafer is sent
Enter exposure machine, reads control wafer apparent height using the gaseous state detecting function of exposure machine again.
Further, after reading control wafer apparent height using the gaseous state detecting function of exposure machine, by the control wafer area
It is divided into M region, measures the average height value H in each region1, H2, H3…HM, and by the average height value in each region
The second average thickness values are obtained divided by the quantity in several regionsPreferably, M > 6, each region
It all include the temperature control inductor of hot plate.
Step 4 passes through the difference in height of the first average height value and the second average height valueIt can calculate
Actual average thickness H of the photoresist in control wafer1-h1, H2-h2…Hm-hmFor the photoresist actual average thickness of corresponding region.
Further, after calculating photoresist actual average thickness, target photoresist is set with a thickness of HT, due to hot plate temperature
Degree changes caused photoresist average thickness differenceIt is bent by the soft roasting temperature of the photoresist in step 1-thickness
Line computation goes out the mean temperature variation △ T of hot plate.
Further, target photoresist is set with a thickness of HT, region photoresist thickness caused by changing due to hot plate temperature
Difference isPass through soft roasting temperature-thickness curve meter
The regional temperature for calculating hot plate changes △ T1, △ T2…△TM.Then, temperature change △ T is corrected to coating developing machine hot plate A
In, adjust hot plate mean temperature；Regional temperature is changed into △ T1, △ T2…△TM, pass through hot plate corresponding region temperature control inductor 3
It is corrected, adjusts thermal panel area temperature.And so on, correct hot plate B, C, D, E ... of coating developing machine.
The present invention is by reading the control wafer apparent height using the gaseous state detecting function (AGILE) of exposure machine；It is high twice
Degree difference can calculate actual (real) thickness of the photoresist in control wafer, by the soft roasting temperature-thickness curve of photoresist, calculate the heat
Plate temperature and target temperature difference simultaneously carry out real-time compensation.The present invention solves real time calibration coating developing machine in process of production
The stability and homogeneity of hot plate temperature.
The above is only a preferred embodiment of the present invention, is not intended to limit the present invention.Come for those skilled in the art
It says, the invention may be variously modified and varied.All within the spirits and principles of the present invention, made any modification, equivalent
Replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (11)
1. a kind of method of on-line optimization coating developing machine hot plate temperature, which comprises the following steps:
Step 1 chooses multiple control wafers in coating developing machine and is coated with identical photoresist, on hot plate using different temperature into
Row is soft roasting, the photoresist thickness average value per a piece of control wafer is measured by film thickness measurement platform, to obtain the soft roasting temperature of photoresist
Spend thickness curve；
Control wafer is sent into exposure machine by step 2, reads the control wafer apparent height using the gaseous state detecting function of exposure machine；
Step 3, the coating photoresist in control wafer, and it is soft roasting using the progress of coating developing machine hot plate, then the control wafer is sent into and is exposed
Ray machine reads control wafer apparent height using the gaseous state detecting function of exposure machine again；
Step 4 can calculate actual average thickness of the photoresist in control wafer by difference in height twice, by step 1
The soft roasting temperature thickness curve of photoresist, calculate hot plate temperature variation, and target temperature difference and carry out real-time compensation.
2. the method for on-line optimization coating developing machine hot plate temperature as described in claim 1, which is characterized in that in step 2,
After reading control wafer apparent height, which is divided into several regions, measures the average height in each region
Value, and the average height value in each region is obtained into the first average thickness values divided by the quantity in several regions.
3. the method for on-line optimization coating developing machine hot plate temperature as described in claim 1, which is characterized in that in step 3,
After carrying out soft bake using coating developing machine hot plate, which is sent into exposure machine, detects function using the gaseous state of exposure machine again
Control wafer apparent height can be read, the control wafer area is divided into several regions later, measures the average height in each region
Value, and the average height value in each region is obtained into the second average thickness values divided by the quantity in several regions.
4. the method for on-line optimization coating developing machine hot plate temperature as described in claim 1, which is characterized in that in step 4,
After calculating photoresist actual average thickness, photoresist actual average thickness is subtracted with the thickness of target photoresist and is obtained due to heat
Photoresist thickness difference caused by plate temperature changes calculates hot plate by the soft roasting temperature thickness curve of the photoresist in step 1
Mean temperature variable quantity, temperature variation is corrected in coating developing machine hot plate, adjust hot plate mean temperature.
5. the method for on-line optimization coating developing machine hot plate temperature as claimed in claim 4, which is characterized in that calculate hot plate
Mean temperature variable quantity after, which is divided into several regions, passes through the soft roasting temperature of the photoresist in step 1
Thickness curve calculates the regional temperature variable quantity of hot plate, and regional temperature variable quantity is incuded by the temperature control of hot plate corresponding region
Device is corrected, and adjusts thermal panel area temperature.
6. the method for the on-line optimization coating developing machine hot plate temperature as described in one of claim 1 to 5, which is characterized in that
The control wafer is Silicon Wafer.
7. the method for the on-line optimization coating developing machine hot plate temperature as described in one of claim 1 to 5, which is characterized in that
The quantity of the control wafer is at least 10.
8. the method for the on-line optimization coating developing machine hot plate temperature as described in one of claim 1 to 5, which is characterized in that
Soft a length of 0.5 DEG C to 2 DEG C of the roasting temperature step of control wafer.
9. the method for the on-line optimization coating developing machine hot plate temperature as described in one of claim 1 to 5, which is characterized in that
The height that the gaseous state detecting function is read, for control wafer surface to exposure machine wafer carrier relative altitude.
10. the method for the on-line optimization coating developing machine hot plate temperature as described in one of claim 2 to 3, which is characterized in that
The control wafer area is divided at least six region, each region includes the temperature control inductor of hot plate.
11. the method for the on-line optimization coating developing machine hot plate temperature as described in one of claim 1 to 5, which is characterized in that
Gaseous state detecting function in the exposure machine is wafer in exposure machine, sprays nitrogen to wafer by gaseous state detection sensor
Surface measures the physical height of the crystal column surface in plane of exposure by gas pressure change.
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| CN113970880A (en) * | 2021-11-23 | 2022-01-25 | 江苏凯威特斯半导体科技有限公司 | Cleaning method for semiconductor photoresist |
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