CN110361423A - MEMS gas sensor and the method for improving MEMS gas sensor stability - Google Patents
MEMS gas sensor and the method for improving MEMS gas sensor stability Download PDFInfo
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- CN110361423A CN110361423A CN201910630446.5A CN201910630446A CN110361423A CN 110361423 A CN110361423 A CN 110361423A CN 201910630446 A CN201910630446 A CN 201910630446A CN 110361423 A CN110361423 A CN 110361423A
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/125—Composition of the body, e.g. the composition of its sensitive layer
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- G—PHYSICS
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/128—Microapparatus
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Abstract
This application involves a kind of MEMS gas sensors, the method and apparatus for improving MEMS gas sensor stability, belong to sensor technical field, the MEMS gas sensor includes: at least one of the sensing unit based on n-type doping semiconductor material and sensing unit based on p-type doped semiconductor materials, and the sensing unit based on p-type intrinsic material；The sensing unit based on n-type doping semiconductor material is for detecting oxidizing gas；The sensing unit based on p-type doped semiconductor materials is for detecting reducibility gas；The electrical characteristic of the sensing unit based on p-type intrinsic material is stablized, for correcting the electrical drift of the sensing unit based on n-type doping semiconductor material and/or the sensing unit based on p-type doped semiconductor materials.Long-time stability are effectively improved, the service life of sensor is extended.
Description
Technical field
This application involves a kind of MEMS gas sensors and the method for improving MEMS gas sensor stability, belong to sensing
Device technical field.
Background technique
Gas sensor is MEMS (Microelectro Mechanical Systems, microsystem) sensing technology neck
The important component in domain realizes the high sensitivity to object gas under low-power consumption, small size and inexpensive constraint condition
Stability with long-time service is the important technology research and development direction of MEMS gas sensor.Existing raising MEMS gas passes
The major programme of sensor long-time stability includes: the stability of 1, raising sensitive material itself, 2, the work to gas sensor
Environment is controlled.
The stability for improving sensitive material itself is of great significance for the promotion of device level performance, but is limited by MEMS
The limitation of gas sensitive material area research, the current material that there is good environment stability and be provided simultaneously with gas sensitization ability
Material mainly has metal oxide and part high molecular polymer, and the stability Study of Lifting of other materials is still relatively lacked,
And the long-time stability of material and the sensitivity to object gas can not be usually promoted simultaneously.To the working environment of gas sensor
It is controlled, then can effectively eliminate influence of the environmental factor to gas sensor self performance, inhibited because environmental factor is to sensing
Device performance bring drift characteristic, effective environmental Kuznets Curves means include operating temperature control and gas sampling filtering two at present
Kind, these means are required to additional facilities or component to realize specific function, increase the complexity of system, be unfavorable for sensor
The promotion of reliability.
Summary of the invention
This application provides a kind of MEMS gas sensor, improve MEMS gas sensor stability method and apparatus,
It can solve the problems in existing scheme.The application provides the following technical solutions:
In a first aspect, providing a kind of MEMS gas sensor, the MEMS gas sensor includes:
In sensing unit based on n-type doping semiconductor material and the sensing unit based on p-type doped semiconductor materials
At least one, and, the sensing unit based on p-type intrinsic material；
The sensing unit based on n-type doping semiconductor material is for detecting oxidizing gas；
The sensing unit based on p-type doped semiconductor materials is for detecting reducibility gas；
The electrical characteristic of the sensing unit based on p-type intrinsic material is stablized, described based on N-type for correcting
The electrical drift of the sensing unit of doped semiconductor materials and/or the sensing unit based on p-type doped semiconductor materials.
Optionally, the sensing unit based on n-type doping semiconductor material has at least two.
Optionally, the sensing unit based on p-type doped semiconductor materials has at least two.
Optionally, the sensing unit based on p-type intrinsic material has at least two.
Optionally, the MEMS gas sensor further includes allocation function unit, and the allocation function unit includes circuit
Unit.
Second aspect provides a kind of method for improving MEMS gas sensor stability, the MEMS gas sensor
Structure as described in above-mentioned first aspect, which comprises
Encapsulation includes the sensing unit based on n-type doping semiconductor material and the sensitivity based on p-type doped semiconductor materials
At least one of unit, and, the MEMS gas sensor of the sensing unit based on p-type intrinsic material.
Optionally, when the MEMS gas sensor only needs detection oxidizing gas, the encapsulation includes being mixed based on N-type
At least one of the sensing unit of miscellaneous semiconductor material and the sensing unit based on p-type doped semiconductor materials, and, it is based on
The MEMS gas sensor of the sensing unit of p-type intrinsic material, comprising:
Encapsulation includes the sensing unit based on n-type doping semiconductor material and described is based on p-type intrinsic semiconductor material
The MEMS gas sensor of the sensing unit of material.
Optionally, when the MEMS gas sensor only needs detection reducibility gas, the encapsulation includes being mixed based on N-type
At least one of the sensing unit of miscellaneous semiconductor material and the sensing unit based on p-type doped semiconductor materials, and, it is based on
The MEMS gas sensor of the sensing unit of p-type intrinsic material, comprising:
Encapsulation includes the sensing unit based on p-type doped semiconductor materials and described is based on p-type intrinsic semiconductor material
The MEMS gas sensor of the sensing unit of material.
The third aspect provides a kind of device for improving MEMS gas sensor stability, and described device includes memory
And processor, at least one program instruction is stored in the memory, the processor is by loading and executing above-metioned instruction
To realize method described in second aspect.
The beneficial effects of the present application are as follows: the sensing unit based on n-type doping semiconductor material is used in combination, is based on p-type
The sensing unit of intrinsic material, the sensing unit based on p-type doped semiconductor materials are to construct MEMS gas sensor
When, due to the presence of the sensing unit based on n-type doping semiconductor material, sensor is with higher to oxidizing gas sensitive
Degree, is able to detect micro oxidizing gas；Due to the presence of the sensing unit based on p-type doped semiconductor materials, sensor
To reducibility gas sensitivity with higher, it is able to detect micro reducibility gas；Due to being based on p-type intrinsic semiconductor material
The presence of the sensing unit of material, when oxidisability and reducibility gas are not present in environment, due to being based on p-type intrinsic semiconductor material
The good feature of the sensing unit of material itself electrical characteristic stability, the resistance value kept stable of its own can be according to based on P
The resistance value of the sensing unit of type intrinsic material is to the sensing unit based on n-type doping semiconductor material and is based on p-type
The sensing unit of doped semiconductor materials carries out real-time calibration, corrects the sensing unit based on n-type doping semiconductor material, is based on
The Static Electro resistance value of the sensing unit of p-type doped semiconductor materials, is effectively reduced by the sensitivity based on n-type doping semiconductor material
Unit, the sensing unit self-conductive drift based on p-type doped semiconductor materials are to entire sensor performance and steadily in the long term
Property bring negative effect, long-time stability can be effectively improved, extend the service life of sensor.
Above description is only the general introduction of technical scheme, in order to better understand the technological means of the application,
And can be implemented in accordance with the contents of the specification, with the preferred embodiment of the application and cooperate attached drawing below detailed description is as follows.
Detailed description of the invention
Fig. 1 is the structural schematic diagram for the MEMS gas sensor that the application one embodiment provides.
Specific embodiment
With reference to the accompanying drawings and examples, the specific embodiment of the application is described in further detail.Implement below
Example is not limited to scope of the present application for illustrating the application.
Referring to FIG. 1, the structural schematic diagram of the MEMS gas sensor provided it illustrates the application one embodiment, such as
Shown in Fig. 1, which includes:
In sensing unit based on n-type doping semiconductor material and the sensing unit based on p-type doped semiconductor materials
At least one, and, the sensing unit based on p-type intrinsic material.Wherein,
The sensing unit based on n-type doping semiconductor material has at normal temperature for detecting oxidizing gas
Higher conductive capability (resistance value is lower), and when there is free oxidizing gas in environment, it is partly led based on n-type doping
The electric conductivity of the sensing unit of body material reduces, and resistance increases.
The sensing unit based on p-type doped semiconductor materials for detecting reducibility gas, have at normal temperature compared with
High conductive capability (resistance value is smaller), and when there is free reducibility gas in environment, it is based on p-type doped semiconductor
The electric conductivity of the sensing unit of material reduces, and resistance increases.
Sensing unit based on n-type doping semiconductor material and the sensing unit based on p-type doped semiconductor materials are bases
In the sensing unit of doped semiconductor materials, with moderate environmental stability, when be not present in environment oxidisability or
When reducibility gas, its own electric conductivity extends and slowly varying at any time, shows certain drift characteristic.
The electrical characteristic of the sensing unit based on p-type intrinsic material is stablized, described based on N-type for correcting
The electrical drift of the sensing unit of doped semiconductor materials and/or the sensing unit based on p-type doped semiconductor materials.?
Sensing unit i.e. based on p-type intrinsic material has moderate sensitive energy to oxidizing gas and reducibility gas
Power, i.e., when there is free oxidizing gas in environment, the electric conductivity of the sensing unit based on p-type intrinsic material increases
By force, resistance reduces, and when there is free reducibility gas in environment, the sensing unit based on p-type intrinsic material
Electric conductivity reduce, resistance increase.
In actual implementation, based on different detection demands, the sensing unit based on n-type doping semiconductor material have to
It is two few, alternatively, the sensing unit based on p-type doped semiconductor materials has at least two, alternatively, described be based on p-type sheet
The sensing unit of sign semiconductor material has at least two.
In addition, in actual implementation, above-mentioned MEMS gas sensor further includes allocation function unit, the allocation function unit
Including circuit unit, certainly, allocation function unit can also include other units, and the present embodiment is to this and without limitation.
It is single that the sensing unit based on n-type doping semiconductor material, the sensitivity based on p-type intrinsic material is used in combination
When member, the sensing unit based on p-type doped semiconductor materials are to construct MEMS gas sensor, due to partly being led based on n-type doping
The presence of the sensing unit of body material, sensor are able to detect micro oxidation to oxidizing gas sensitivity with higher
Property gas；Due to the presence of the sensing unit based on p-type doped semiconductor materials, sensor is with higher to reducibility gas
Sensitivity is able to detect micro reducibility gas；Due to the presence of the sensing unit based on p-type intrinsic material, when
When oxidisability and reducibility gas being not present in environment, since the sensing unit based on p-type intrinsic material itself is electrical
The good feature of character constancy, the resistance value kept stable of its own can be according to based on the quick of p-type intrinsic material
The resistance value of unit is felt to the sensing unit based on n-type doping semiconductor material and the sensitivity based on p-type doped semiconductor materials
Unit carries out real-time calibration, corrects sensing unit based on n-type doping semiconductor material, based on p-type doped semiconductor materials
The Static Electro resistance value of sensing unit, be effectively reduced by based on n-type doping semiconductor material sensing unit, based on p-type doping half
The sensing unit self-conductive drift of conductor material negatively affects entire sensor performance and long-time stability bring, can
Long-time stability are effectively improved, the service life of sensor is extended.
Second aspect provides a kind of method for improving MEMS gas sensor stability, which comprises
Encapsulation includes the sensing unit based on n-type doping semiconductor material and the sensitivity based on p-type doped semiconductor materials
At least one of unit, and, the MEMS gas sensor of the sensing unit based on p-type intrinsic material.
In actual implementation, it according to actual detection demand, for example only needs to detect oxidisability in the MEMS gas sensor
When gas, above-mentioned encapsulation step includes: that encapsulation includes the sensing unit based on n-type doping semiconductor material and described is based on
The MEMS gas sensor of the sensing unit of p-type intrinsic material.
For another example, when the MEMS gas sensor only needs detection reducibility gas, above-mentioned encapsulation step includes: encapsulation
Including the sensing unit based on p-type doped semiconductor materials and the sensing unit based on p-type intrinsic material
The MEMS gas sensor.
Also, in actual implementation, according to actual demand, sensing unit based on n-type doping semiconductor material is based on P
The sensing unit of type doped semiconductor materials and sensing unit based on p-type intrinsic material can have one or
Multiple, the present embodiment is to this and without limitation.
Optionally, the application is also provided with a kind of device for improving MEMS gas sensor stability, and described device includes
Memory and processor are stored at least one program instruction in the memory, and the processor is by loading and executing
Instruction is stated to realize method as described above.
Optionally, the application is also provided with a kind of computer readable storage medium, in the computer readable storage medium
It is stored with program, the method that described program is loaded by processor and executed to realize above method embodiment.
Each technical characteristic of embodiment described above can be combined arbitrarily, for simplicity of description, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, all should be considered as described in this specification.
The several embodiments of the application above described embodiment only expresses, the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the concept of this application, various modifications and improvements can be made, these belong to the protection of the application
Range.Therefore, the scope of protection shall be subject to the appended claims for the application patent.
Claims (9)
1. a kind of MEMS gas sensor, which is characterized in that the MEMS gas sensor includes: based on n-type doping semiconductor
At least one of the sensing unit of material and the sensing unit based on p-type doped semiconductor materials, and, it is intrinsic based on p-type
The sensing unit of semiconductor material；
The sensing unit based on n-type doping semiconductor material is for detecting oxidizing gas；
The sensing unit based on p-type doped semiconductor materials is for detecting reducibility gas；
The electrical characteristic of the sensing unit based on p-type intrinsic material is stablized, described based on n-type doping for correcting
The electrical drift of the sensing unit of semiconductor material and/or the sensing unit based on p-type doped semiconductor materials.
2. MEMS gas sensor according to claim 1, which is characterized in that described to be based on n-type doping semiconductor material
Sensing unit have at least two.
3. MEMS gas sensor according to claim 1, which is characterized in that described to be based on p-type doped semiconductor materials
Sensing unit have at least two.
4. MEMS gas sensor according to claim 1, which is characterized in that described to be based on p-type intrinsic material
Sensing unit have at least two.
5. MEMS gas sensor according to any one of claims 1 to 4, which is characterized in that the MEMS gas sensor
It further include allocation function unit, the allocation function unit includes circuit unit.
6. a kind of method for improving MEMS gas sensor stability, which is characterized in that the MEMS gas sensor such as right
It is required that 1 to 5 is any described, which comprises
Encapsulation includes the sensing unit based on n-type doping semiconductor material and the sensing unit based on p-type doped semiconductor materials
At least one of, and, the MEMS gas sensor of the sensing unit based on p-type intrinsic material.
7. according to the method described in claim 6, it is characterized in that, only needing detection oxidisability gas in the MEMS gas sensor
When body, the encapsulation includes the sensing unit based on n-type doping semiconductor material and the sensitivity based on p-type doped semiconductor materials
At least one of unit, and, the MEMS gas sensor of the sensing unit based on p-type intrinsic material, packet
It includes:
Encapsulation includes the sensing unit based on n-type doping semiconductor material and described based on p-type intrinsic material
The MEMS gas sensor of sensing unit.
8. according to the method described in claim 6, it is characterized in that, only needing detection reproducibility gas in the MEMS gas sensor
When body, the encapsulation includes the sensing unit based on n-type doping semiconductor material and the sensitivity based on p-type doped semiconductor materials
At least one of unit, and, the MEMS gas sensor of the sensing unit based on p-type intrinsic material, packet
It includes:
Encapsulation includes the sensing unit based on p-type doped semiconductor materials and described based on p-type intrinsic material
The MEMS gas sensor of sensing unit.
9. a kind of device for improving MEMS gas sensor stability, which is characterized in that described device includes memory and processing
Device is stored at least one program instruction in the memory, and the processor is by loading and executing above-metioned instruction to realize
Method as described in claim 6 to 8 is any.
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| CN201910630446.5A CN110361423B (en) | 2019-07-12 | 2019-07-12 | MEMS gas sensor and method for improving stability of MEMS gas sensor |
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| CN201910630446.5A CN110361423B (en) | 2019-07-12 | 2019-07-12 | MEMS gas sensor and method for improving stability of MEMS gas sensor |
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Cited By (1)
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| US20210262967A1 (en) * | 2018-06-08 | 2021-08-26 | Omron Corporation | Micro-hotplate and mems gas sensor |
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Cited By (1)
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