CN110357626B - Doped tungsten oxide target material and preparation method thereof - Google Patents
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Abstract
The invention relates to a doped tungsten oxide target material and a preparation method thereof, wherein the preparation method comprises the following steps: activating tungsten oxideMelting and grinding to obtain activated tungsten oxide; activating and grinding the doped oxide to obtain an activated doped oxide, wherein the doped oxide is an oxide consisting of one or more of titanium, nickel, tantalum, rhenium, iridium, molybdenum, niobium, silicon, tin, zinc, zirconium and germanium; uniformly mixing the activated tungsten oxide and the activated doped oxide, and pressing to obtain a blank; sintering the blank to obtain a doped tungsten oxide target material; wherein the relationship between the particle size ratio and the molar ratio of the activated tungsten oxide to the activated doped oxide is as follows:
Description
Technical Field
The invention relates to a target material and a preparation method thereof, in particular to a tungsten oxide doped target material and a preparation method thereof.
Background
When the electrochromic film layer is prepared by magnetron sputtering, if a metal target is used, phase splitting is easily generated in the preparation process of the target, and the uniformity of a coated film is influenced; because of adopting reactive sputtering, the coating rate is slower, and the target surface is poisoned due to a large amount of oxygen, abnormal electric arc and dust fall are generated, and the film quality and the device qualification rate are seriously influenced. The ceramic target material using the metal oxide only needs to be introduced with a small amount of oxygen, dust falling is not easy to cause, the sputtering rate can be improved by 5-10 times compared with that of a metal target, but the ceramic target must meet the following requirements: the target material has certain conductivity and can use power supplies such as direct current, intermediate frequency and the like; the target material has the advantages of uniform components and high density. In addition, tungsten oxide in an oxidized state is easy to volatilize, the density of the target is influenced, production equipment is damaged, more importantly, the difference between the internal atmosphere and the external atmosphere of the target is large, and the volatilization of the tungsten oxide causes the difference between the internal conductivity and the external conductivity of the target, so that process fluctuation is caused, and the process stability is greatly influenced. In addition, there is no method for obtaining an electrochromic target material with uniform components by controlling the particle size of the powder.
Disclosure of Invention
The invention mainly aims to provide a novel doped tungsten oxide target material and a preparation method thereof, and aims to solve the technical problem of obtaining the doped tungsten oxide target material which has uniform components, good density and conductivity, thereby being more practical.
The purpose of the invention and the technical problem to be solved are realized by adopting the following technical scheme. The preparation method of the doped tungsten oxide target material provided by the invention comprises the following steps:
activating and grinding tungsten oxide to obtain activated tungsten oxide, wherein the tungsten oxide is WO3-x，0≤x<2, the activated tungsten oxide is WOy，y≤3-x；
Activating and grinding the doped oxide to obtain the activated doped oxide, wherein the doped oxide is MOm，0<m is less than or equal to 3, and the activated doped oxide is MOnN is less than or equal to M, wherein M is one or more of titanium, nickel, tantalum, rhenium, iridium, molybdenum, niobium, silicon, tin, zinc, zirconium and germanium;
uniformly mixing the activated tungsten oxide and the activated doped oxide, and pressing to obtain a blank;
sintering the blank to obtain a doped tungsten oxide target material;
wherein the relationship between the particle size ratio and the molar ratio of the activated tungsten oxide to the activated doped oxide is as follows:
in the formula:
Rwradius of activated tungsten oxide;
RMradius of the activated doped oxide;
nwis the number of moles of activated tungsten oxide;
nMis the number of moles of activated doped oxide;
Mwis the molar mass of activated tungsten oxide;
MMis the molar mass of the activated doped oxide;
ρwdensity of activated tungsten oxide;
ρMto activate the density of the doped oxide.
The object of the present invention and the technical problems solved thereby can be further achieved by the following technical measures.
Preferably, in the preparation method of the doped tungsten oxide target, the particle number ratio of the activated tungsten oxide to the activated doped oxide in the green body is less than 1.
Preferably, in the preparation method of the doped tungsten oxide target, the tungsten oxide activation includes: tungsten oxide is mixed with a reducing agent, heated in an inert or vacuum environment at 800-1100 ℃, and then heated in an oxidizing environment at 200-500 ℃.
Preferably, in the preparation method of the doped tungsten oxide target, the activation of the doped oxide includes: the doped oxide is mixed with a reducing agent, heated in an inert or vacuum environment at 800-1500 ℃, and then heated in an oxidizing environment at 200-500 ℃.
Preferably, in the preparation method of the doped tungsten oxide target, the reducing agent is carbon powder or an organic reducing agent.
Preferably, in the preparation method of the doped tungsten oxide target, the organic reducing agent is polyvinyl alcohol or methyl cellulose.
Preferably, in the preparation method of the doped tungsten oxide target, the molar content of the doped metal element in the doped tungsten oxide target is 0.1-20%.
Preferably, in the preparation method of the doped tungsten oxide target, the sintering atmosphere is a reducing atmosphere, an inert atmosphere or a vacuum atmosphere, and the sintering temperature is 1100-1500 ℃.
Preferably, in the preparation method of the doped tungsten oxide target, the reducing atmosphere is a mixed gas of an inert gas and a reducing gas; wherein the ratio of the inert gas to the reducing gas is 8: 2-9.99: 0.01.
the object of the present invention and the technical problem to be solved are also achieved by the following technical means. According to the doped tungsten oxide target material provided by the invention, the doped tungsten oxide target material is prepared by the method; the doped tungsten oxide target material is MWO3-xWherein 0.1 < x < 1, and M is one or more of titanium, nickel, tantalum, rhenium, iridium, molybdenum, niobium, silicon, tin, zinc, zirconium and germanium.
By the technical scheme, the tungsten oxide doped target material and the preparation method thereof at least have the following advantages:
according to the invention, tungsten oxide and doped oxide are respectively activated, so that an oxide system is in an oxygen deficiency state, multiple valence tungsten oxide particles and multiple valence doped oxide particles are obtained, the activity of raw materials is improved, negative ion vacancies are formed, the negative ion vacancies have the characteristics of an N-type semiconductor, and a generated blank is subjected to reduction sintering, so that the negative ion vacancies are further increased, the conductivity of the negative ion vacancies is greatly improved, and the obtained doped tungsten oxide target material has conductivity and can use a direct current or intermediate frequency power supply; meanwhile, due to the addition of the underoxide tungsten oxide, the volatilization of the tungsten oxide can be reduced, and the density of the target material is improved.
According to the invention, the relation between the granularity and the molar ratio among the oxides is established, so that the sintering reaction among the particles is facilitated, and the electrochromic doped tungsten oxide target material with uniform components and high density is obtained.
The invention only uses pure tungsten oxide and doped oxide as raw materials, and does not dope any other impurities, thereby obtaining the target material with high purity.
The foregoing is a summary of the present invention, and in order to provide a clear understanding of the technical means of the present invention and to be implemented in accordance with the present specification, the following is a detailed description of the preferred embodiments of the present invention.
Detailed Description
To further illustrate the technical means and effects of the present invention adopted to achieve the predetermined objects, the following detailed description will be given for the doped tungsten oxide target and the method for preparing the same according to the present invention, and the detailed implementation, structure, features and effects thereof. In the following description, different "one embodiment" or "an embodiment" refers to not necessarily the same embodiment. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.
One embodiment of the present invention provides a method for preparing a doped tungsten oxide target, which includes:
activating and grinding tungsten oxide to obtain activated tungsten oxide, wherein the tungsten oxide is WO3-x，0≤x<2, the activated tungsten oxide is WOy，y≤3-x；
Activating and grinding the doped oxide to obtain the activated doped oxide, wherein the doped oxide is MOm，0<m is less than or equal to 3, and the activated doped oxide is MOnN is less than or equal to M, wherein M is one or more of titanium, nickel, tantalum, rhenium, iridium, molybdenum, niobium, silicon, tin, zinc, zirconium and germanium;
uniformly mixing the activated tungsten oxide and the activated doped oxide, and pressing to obtain a blank;
sintering the blank to obtain a doped tungsten oxide target material;
wherein the relationship between the particle size ratio and the molar ratio of the activated tungsten oxide to the activated doped oxide is as follows:
in the formula:
Rwradius of activated tungsten oxide;
RMradius of the activated doped oxide;
nwis the number of moles of activated tungsten oxide;
nMis the number of moles of activated doped oxide;
Mwis the molar mass of activated tungsten oxide;
MMis the molar mass of the activated doped oxide;
ρwdensity of activated tungsten oxide;
ρMto activate the density of the doped oxide.
The above relation of the embodiment of the present invention is derived from the following formula, and the specific derivation process is as follows:
m＝nM＝XρV＝Xρ4/3πR3
in the formula: m is mass, n is number of moles, M is molar mass, X is number of particles, ρ is density, V is volume, and R is particle radius.
XwThe number of particles of activated tungsten oxide;
XMthe number of particles for activating the doped oxide;
nwis the number of moles of activated tungsten oxide;
nMis the number of moles of activated doped oxide;
Mwis the molar mass of activated tungsten oxide;
MMis the molar mass of the activated doped oxide;
ρwdensity of activated tungsten oxide;
ρMis the density of the activated doped oxide;
Rwradius of activated tungsten oxide;
RMto activate the radius of the doped oxide.
The ratio of the particle radii is equal to the ratio of the particle diameters, and the particle size ratio can be expressed by the ratio of the particle diameters, i.e., the ratio of the particle radii can be equated with the particle size ratio. Therefore, R in the above formula may be substituted for the radius, or for the diameter or particle size.
In the embodiment of the invention, after activation and grinding, the obtained activated tungsten oxide and the activated doped oxide are both particles.
According to the embodiment of the invention, the relation between the granularity and the molar ratio is established, so that the sintering reaction among particles is facilitated, and the electrochromic doped tungsten oxide target material with uniform components and high density is obtained.
It should be noted that, in the embodiments of the present invention, the purpose of activating the tungsten oxide and the doped oxide is to make the oxide system in an oxygen deficiency state, to obtain multiple valence tungsten oxide particles and multiple valence doped oxide particles, and to improve the activity of the raw material, to form negative ion vacancies, so that the doped tungsten oxide target has the characteristics of an N-type semiconductor, to improve the conductivity thereof, and further, the obtained doped tungsten oxide target has conductivity, and can use a dc or an intermediate frequency power supply; meanwhile, due to the addition of the underoxide tungsten oxide, the volatilization of the tungsten oxide can be reduced, and the density of the target material is improved.
The way to achieve the above-mentioned purpose of activation: the surface of the oxide is fresh and easy to react by heating, and the oxygen content of the oxide before and after activation is the same; furthermore, the oxide can be deoxidized to form an oxygen-deficient oxide, so that the oxide has the characteristics of an N-type semiconductor and the conductivity of the N-type semiconductor is improved, and the oxygen content of the oxide before and after activation is reduced by a proper amount.
Further preferably, the tungsten oxide is partially oxidized in a high-temperature inert or vacuum environment, and the heating temperature and time are controlled to allow the tungsten oxide to partially oxidize while not generating metal tungsten, thereby obtaining the multi-valence tungsten oxide particles.
As a preferred embodiment, the ratio of the number of particles of activated tungsten oxide to the number of particles of activated doped oxide in said body is less than 1.
In the embodiment of the invention, the particle number ratio of the activated tungsten oxide to the activated doped oxide is less than 1, which is beneficial to the sintering reaction among particles to form a uniform doped tungsten oxide product, so that the doped oxide phase enters the tungsten oxide phase, and the doped oxide phase is reduced.
The tungsten oxide activation comprises: tungsten oxide is heated in an inert or vacuum environment at 800-.
As a preferred embodiment, the tungsten oxide activation comprises: tungsten oxide is mixed with a reducing agent, heated in an inert or vacuum environment at 800-1100 ℃, and then heated in an oxidizing environment at 200-500 ℃.
In the embodiment of the invention, the inert environment is preferably protected by nitrogen or argon, and the vacuum environment is preferably a vacuum degree of 5-1000Pa, and more preferably a vacuum degree of 100-500 Pa.
Mixing tungsten oxide with a reducing agent, and heating at 800-1100 ℃ in an inert or vacuum environment to ensure that the tungsten oxide does not generate metal tungsten while losing part of oxygen, thereby obtaining multi-valence tungsten oxide particles; and then heated in an oxidizing environment of 200-500 ℃ to remove unreacted reducing agent, but at such a low temperature does not oxidize the tungsten oxide particles formed, so that they remain in a multi-valence state.
The multi-valence tungsten oxide particles obtained by the treatment contain WO1～3I.e. containing part of tungsten oxide, tungsten dioxide or tungsten oxide, so that the obtained oxide particles are in an oxygen deficient state, and form N-type semiconductor characteristics, i.e. form negative ion vacancies for conduction. In addition, the addition of the underoxide tungsten oxide can reduce the volatilization of the tungsten oxide and improve the density of the target material.
The reducing agent is not particularly limited, so long as the tungsten oxide can be deoxidized, and under the premise of controlling the dosage or the reaction time, the tungsten oxide can be deoxidized without generating metal tungsten, thereby obtaining the multi-valence tungsten oxide particles. At the same time, can be removed by oxidation without introducing new substances into the system of the invention.
The doped oxide activation comprises: the doped oxide is heated at 800-.
As a preferred embodiment, the doped oxide activation comprises: the doped oxide is mixed with a reducing agent, heated in an inert or vacuum environment at 800-1500 ℃, and then heated in an oxidizing environment at 200-500 ℃.
Similar to the activation of tungsten oxide, the activation of the doped oxide here also results in the doped oxide losing part of the oxygen without generating the corresponding metal, resulting in a multi-valent doped oxide particle. This causes the resulting oxide particles to be in an oxygen deficient state, and to have N-type semiconductor characteristics, i.e., to be conductive by forming negative ion vacancies. The temperature, environment and reducing agent used for different doped oxides also vary.
In a preferred embodiment, the reducing agent is carbon powder or an organic reducing agent.
In the embodiment of the invention, the reducing agent can be carbon powder, or can be organic reducing agent, such as hydrocarbon, aldehyde, alcohol, etc., and substances containing carbon and hydrogen can be changed into carbon dioxide and water to be removed after oxidation-reduction reaction, and new substances can not be introduced into the system of the invention.
In a preferred embodiment, the organic reducing agent is polyvinyl alcohol or methyl cellulose.
Organic reducing agents have two functions: one function is reduction, which is used to make the oxide become oxygen-deficient substance, so that the oxide has the conductive characteristic; the other function is dispersion, the oxide particles in the invention are micron-sized or nano-sized, the high temperature is easy to agglomerate, the organic reducing agent is not easy to adhere by adding, and the original granularity is kept.
By respectively activating the tungsten oxide and the doped oxide, on one hand, the tungsten oxide and the doped oxide can be changed into a reduction state, and the conductivity of the target material is increased; on the other hand, the activation performance can be enhanced.
As a preferred embodiment, the molar content of the doped metal element in the doped tungsten oxide target material is 0.1-20%;
the doped metal element is one or more of titanium, nickel, tantalum, rhenium, iridium, molybdenum, niobium, silicon, tin, zinc, zirconium and germanium.
As a preferred embodiment, the sintering atmosphere is a reducing atmosphere, an inert atmosphere or a vacuum atmosphere, and the sintering temperature is 1100-1500 ℃.
In the embodiment of the present invention, the reason for sintering in a reducing atmosphere, an inert atmosphere, or a vacuum atmosphere is as follows: the final conductivity is prevented from being influenced by insufficient oxygen or excessive oxygen caused by oxidation or massive oxygen loss of the blank at high temperature.
As a preferred embodiment, the reducing atmosphere is a mixed gas of an inert gas and a reducing gas; wherein the ratio of the inert gas to the reducing gas is 8: 2-9.99: 0.01. wherein, the inert gas is argon or nitrogen, and the reducing gas is hydrogen or carbon monoxide.
Another embodiment of the present invention provides a doped tungsten oxide target material, which is prepared by the foregoing method; the doped tungsten oxide target material is MWO3-xWherein 0.1 < x < 1, and M is one or more of titanium, nickel, tantalum, rhenium, iridium, molybdenum, niobium, silicon, tin, zinc, zirconium and germanium.
On the aspect of improving the conductivity, on one hand, the activity of the raw material and the conductivity of the target material are improved by forming oxygen-deficient oxide, and on the other hand, the volatilization of tungsten oxide at high temperature is reduced by adding oxygen-deficient tungsten oxide, so that the density of the target material is improved.
The doped tungsten oxide target material prepared by the invention has conductivity. A dc or intermediate frequency power supply may be used.
In the embodiment of the invention, the sintering process of the doped tungsten oxide target belongs to solid phase sintering and has a very close relationship with particles of the material. The two materials are mixed uniformly, particles are reduced theoretically, and the uniform mixing is facilitated, and in addition, for elements with low content, if the number of the particles is the same as or even more than that of tungsten oxide, the particles can be mixed uniformly better, and the solid phase sintering is facilitated. Thus, to uniformly dope the low level dopant, the particle size ratio and molar ratio of activated tungsten oxide to activated doped oxide are linked.
Example 1
The embodiment provides a preparation method of a doped tungsten oxide target, which comprises the following steps:
heating tungsten trioxide at 1100 deg.C under vacuum to activate it, grinding, sieving, and grading to obtain activated tungsten oxide (WO)2.5) Particles with a particle size of 500 nm;
heating titanium oxide at 1500 deg.C under vacuum degree of 200Pa to activate it, grinding, sieving, and grading to obtain activated titanium oxide (TiO)1.5) Particles having a particle size of 200 nm;
uniformly mixing the obtained activated tungsten oxide particles and activated titanium oxide particles at a molar ratio of 9:1, and pressing at 60Mpa for 5min to obtain a blank;
sintering the obtained blank at 1100 ℃ under the condition that the vacuum degree is 10Pa to obtain the titanium-doped tungsten oxide target material.
Example 2
The embodiment provides a preparation method of a doped tungsten oxide target, which comprises the following steps:
tungsten oxide (WO)2.5) Mixing with carbon powder, heating at 900 deg.C under inert atmosphere to activate, grinding, sieving, and grading to obtain activated tungsten oxide (WO)2) Particles with a particle size of 500 nm;
mixing tantalum oxide and carbon powder, heating at 1100 deg.C under inert environment to activate, grinding, sieving, and grading to obtain activated tantalum oxide (TaO)2) Particles having a particle size of 150 nm;
uniformly mixing the obtained activated tungsten oxide particles and activated tantalum oxide particles at a molar ratio of 9.5:0.5, and pressing for 5min under 10MPa to obtain a blank;
sintering the obtained blank at 1200 ℃ in a reducing atmosphere, wherein the reducing atmosphere is a mixed gas of argon and hydrogen, and the ratio of the argon to the hydrogen is 8: and 2, obtaining the tantalum-doped tungsten oxide target material.
Example 3
The embodiment provides a preparation method of a doped tungsten oxide target, which comprises the following steps:
tungsten oxide (WO)3) Mixing with polyvinyl alcohol, heating at 1000 deg.C under inert atmosphere to activate, grinding, sieving, and grading to obtain activated tungsten oxide (WO)3) Particles having a particle size of 2500 nm;
mixing nickel oxide and polyvinyl alcohol, heating at 1300 ℃ in an inert environment to activate the nickel oxide, grinding, sieving and grading to obtain activated nickel oxide (NiO) particles with the granularity of 800 nm;
uniformly mixing the obtained activated tungsten oxide particles and activated nickel oxide particles at a molar ratio of 9:1, and pressing for 6min under 10MPa to obtain a blank;
sintering the obtained blank at 1300 ℃ in a reducing atmosphere, wherein the reducing atmosphere is a mixed gas of nitrogen and carbon monoxide, and the ratio of the nitrogen to the carbon monoxide is 9.99: 0.01, obtaining the nickel-doped tungsten oxide target material.
Example 4
The embodiment provides a preparation method of a doped tungsten oxide target, which comprises the following steps:
tungsten oxide (WO)2.5) Mixing with methylcellulose, heating at 800 deg.C under inert atmosphere to activate, grinding, and sieving for classification to obtain activated tungsten oxide (WO)2) Particles with a particle size of 1000 nm;
mixing zinc oxide and methylcellulose, heating at 800 deg.C under inert environment to activate, grinding, sieving, and grading to obtain activated zinc oxide (ZnO) granule with particle size of 450 nm;
uniformly mixing the obtained activated tungsten oxide particles and activated zinc oxide particles at a molar ratio of 8:2, and pressing at 40MPa for 10min to obtain a blank;
sintering the obtained blank at 1500 ℃ in a reducing atmosphere, wherein the reducing atmosphere is a mixed gas of nitrogen and hydrogen, and the ratio of the nitrogen to the hydrogen is 9: and 1, obtaining the zinc-doped tungsten oxide target material.
Example 5
The embodiment provides a preparation method of a doped tungsten oxide target, which comprises the following steps:
tungsten oxide (WO)3) Heating at 1000 deg.C under vacuum to activate, grinding, sieving, and grading to obtain activated tungsten oxide (WO)2.8) Particles with a particle size of 500 nm;
heating tin oxide and nickel oxide at 1500 deg.C under vacuum to activate, grinding, sieving, and grading to obtain activated tin oxide and nickel oxide (SnO)2、NiO0.98) Particles having a particle size of 150 nm;
uniformly mixing the obtained activated tungsten oxide particles, activated tin oxide and nickel oxide particles according to the molar ratio of 9.5:0.2:0.3, and pressing at 120MPa for 10min to obtain a blank;
and sintering the obtained blank at 1400 ℃ in a vacuum atmosphere to obtain the tin-nickel doped tungsten oxide target material.
Comparative example
The comparative example provides a preparation method of a doped tungsten oxide target material, which comprises the following steps:
uniformly mixing tungsten trioxide particles with the particle size of 500nm and titanium oxide particles with the particle size of 500nm, wherein the molar ratio is 9:1, pressing for 5min under 60MPa to obtain a blank;
sintering the obtained blank at 1300 ℃ in vacuum atmosphere to obtain the titanium-doped tungsten oxide target.
The doped tungsten oxide targets prepared in examples 1 to 5 and the comparative example were tested, and the specific test results are shown in table 1.
TABLE 1 Performance test results for tungsten oxide-doped targets
As can be seen from table 1, in embodiments 1 to 5 of the present invention, by activating tungsten oxide and doped oxide respectively, the activity of the raw material is improved, negative ion vacancies are formed, so that the blank has the characteristics of an N-type semiconductor, and the generated blank is subjected to reduction sintering, so that the negative ion vacancies are further increased, the conductivity of the blank is greatly improved, the resistivity of the generated target is reduced, the density is increased, and the number of defects in the thin film is reduced.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the present invention in any way, and any simple modification, equivalent change and modification made to the above embodiment according to the technical spirit of the present invention are still within the scope of the technical solution of the present invention.
Claims (8)
1. A preparation method of a doped tungsten oxide target material is characterized by comprising the following steps:
activating and grinding tungsten oxide to obtain activated tungsten oxide; the tungsten oxide activation comprises: mixing tungsten oxide with a reducing agent, heating at the temperature of 800-1100 ℃ in an inert or vacuum environment, and then heating at the temperature of 200-500 ℃ in an oxidizing environment;
activating and grinding the doped oxide to obtain an activated doped oxide; the doped oxide activation comprises: mixing the doped oxide with a reducing agent, heating the mixture in an inert or vacuum environment at the temperature of 800-1500 ℃, and then heating the mixture in an oxidizing environment at the temperature of 200-500 ℃;
uniformly mixing the activated tungsten oxide and the activated doped oxide, and pressing to obtain a blank;
sintering the blank to obtain a doped tungsten oxide target material; the tungsten oxide doped target material is WMO3-xWherein 0.1 < x < 1, and M is one of titanium, nickel, tantalum, rhenium, iridium, molybdenum, niobium, silicon, tin, zinc, zirconium and germanium;
wherein the relationship between the particle size ratio and the molar ratio of the activated tungsten oxide to the activated doped oxide is as follows:
in the formula:
Rwradius of activated tungsten oxide;
RMradius of the activated doped oxide;
nwis the number of moles of activated tungsten oxide;
nMis the number of moles of activated doped oxide;
Mwis the molar mass of activated tungsten oxide;
MMis the molar mass of the activated doped oxide;
ρwdensity of activated tungsten oxide;
ρMto activate the density of the doped oxide.
2. The method for preparing a doped tungsten oxide target according to claim 1, wherein the ratio of the number of particles of the activated tungsten oxide to the number of particles of the activated doped oxide in the green body is less than 1.
3. The method for preparing the doped tungsten oxide target material according to claim 1, wherein the reducing agent is carbon powder or an organic reducing agent.
4. The method for preparing the doped tungsten oxide target material according to claim 3, wherein the organic reducing agent is polyvinyl alcohol or methyl cellulose.
5. The method for preparing the doped tungsten oxide target material according to claim 1, wherein the molar content of the doped metal element in the doped tungsten oxide target material is 0.1-20%.
6. The method as claimed in claim 1, wherein the sintering atmosphere is a reducing atmosphere, an inert atmosphere or a vacuum atmosphere, and the sintering temperature is 1100-1500 ℃.
7. The method according to claim 6, wherein the reducing atmosphere is a mixture of an inert gas and a reducing gas.
8. A doped tungsten oxide target material prepared by the method of any one of claims 1 to 7; the tungsten oxide doped target material is WMO3-xWherein 0.1 < x < 1, and M is one of titanium, nickel, tantalum, rhenium, iridium, molybdenum, niobium, silicon, tin, zinc, zirconium and germanium.
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