CN110354879A - A kind of composite material and preparation method - Google Patents
A kind of composite material and preparation method Download PDFInfo
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- CN110354879A CN110354879A CN201810314658.8A CN201810314658A CN110354879A CN 110354879 A CN110354879 A CN 110354879A CN 201810314658 A CN201810314658 A CN 201810314658A CN 110354879 A CN110354879 A CN 110354879A
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- silicon
- graphene
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- 239000002131 composite material Substances 0.000 title claims abstract description 71
- 238000002360 preparation method Methods 0.000 title claims abstract description 24
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 114
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 113
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 103
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 98
- 239000002245 particle Substances 0.000 claims abstract description 92
- 239000004065 semiconductor Substances 0.000 claims abstract description 30
- 239000002105 nanoparticle Substances 0.000 claims abstract description 28
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims description 42
- 229910002804 graphite Inorganic materials 0.000 claims description 27
- 239000010439 graphite Substances 0.000 claims description 27
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical group OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims description 24
- 239000005864 Sulphur Substances 0.000 claims description 12
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 11
- WLZRMCYVCSSEQC-UHFFFAOYSA-N cadmium(2+) Chemical compound [Cd+2] WLZRMCYVCSSEQC-UHFFFAOYSA-N 0.000 claims description 8
- 229910052793 cadmium Inorganic materials 0.000 claims description 7
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 7
- 150000001336 alkenes Chemical class 0.000 claims description 5
- 235000013339 cereals Nutrition 0.000 claims description 4
- 235000007164 Oryza sativa Nutrition 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 235000009566 rice Nutrition 0.000 claims description 3
- 229910003460 diamond Inorganic materials 0.000 claims description 2
- 239000010432 diamond Substances 0.000 claims description 2
- 239000004575 stone Substances 0.000 claims description 2
- 240000007594 Oryza sativa Species 0.000 claims 1
- 150000002500 ions Chemical class 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 25
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 22
- 239000001257 hydrogen Substances 0.000 abstract description 22
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 22
- 238000006731 degradation reaction Methods 0.000 abstract description 20
- 230000015556 catabolic process Effects 0.000 abstract description 19
- 230000001699 photocatalysis Effects 0.000 abstract description 10
- 238000007146 photocatalysis Methods 0.000 abstract description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052760 oxygen Inorganic materials 0.000 abstract description 6
- 239000001301 oxygen Substances 0.000 abstract description 6
- 230000001443 photoexcitation Effects 0.000 abstract description 4
- 238000005215 recombination Methods 0.000 abstract description 4
- 239000000243 solution Substances 0.000 description 29
- 239000003054 catalyst Substances 0.000 description 21
- 238000012360 testing method Methods 0.000 description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 14
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 12
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 12
- 239000003643 water by type Substances 0.000 description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 11
- RBTBFTRPCNLSDE-UHFFFAOYSA-N 3,7-bis(dimethylamino)phenothiazin-5-ium Chemical compound C1=CC(N(C)C)=CC2=[S+]C3=CC(N(C)C)=CC=C3N=C21 RBTBFTRPCNLSDE-UHFFFAOYSA-N 0.000 description 10
- 229960000907 methylthioninium chloride Drugs 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 229960000935 dehydrated alcohol Drugs 0.000 description 9
- 239000008367 deionised water Substances 0.000 description 8
- 229910021641 deionized water Inorganic materials 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 239000000843 powder Substances 0.000 description 8
- 238000006722 reduction reaction Methods 0.000 description 8
- 238000003756 stirring Methods 0.000 description 8
- 238000002604 ultrasonography Methods 0.000 description 8
- 239000004570 mortar (masonry) Substances 0.000 description 7
- 230000009467 reduction Effects 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 6
- 238000001035 drying Methods 0.000 description 6
- 230000004298 light response Effects 0.000 description 6
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 6
- 239000012046 mixed solvent Substances 0.000 description 5
- 239000002243 precursor Substances 0.000 description 5
- 239000000725 suspension Substances 0.000 description 5
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 4
- YKYOUMDCQGMQQO-UHFFFAOYSA-L cadmium dichloride Chemical compound Cl[Cd]Cl YKYOUMDCQGMQQO-UHFFFAOYSA-L 0.000 description 4
- 238000001027 hydrothermal synthesis Methods 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 229910052708 sodium Inorganic materials 0.000 description 4
- 239000011734 sodium Substances 0.000 description 4
- DLFVBJFMPXGRIB-UHFFFAOYSA-N thioacetamide Natural products CC(N)=O DLFVBJFMPXGRIB-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000006555 catalytic reaction Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 235000011187 glycerol Nutrition 0.000 description 3
- 238000005984 hydrogenation reaction Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 241000209094 Oryza Species 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 108010081996 Photosystem I Protein Complex Proteins 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 2
- SGJUCMOYVKXLDY-UHFFFAOYSA-N acetic acid;cadmium Chemical compound [Cd].CC(O)=O.CC(O)=O SGJUCMOYVKXLDY-UHFFFAOYSA-N 0.000 description 2
- 239000011218 binary composite Substances 0.000 description 2
- XIEPJMXMMWZAAV-UHFFFAOYSA-N cadmium nitrate Inorganic materials [Cd+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XIEPJMXMMWZAAV-UHFFFAOYSA-N 0.000 description 2
- 239000004202 carbamide Substances 0.000 description 2
- 239000007809 chemical reaction catalyst Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000002242 deionisation method Methods 0.000 description 2
- 238000003912 environmental pollution Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- 239000002957 persistent organic pollutant Substances 0.000 description 2
- NMHMNPHRMNGLLB-UHFFFAOYSA-N phloretic acid Chemical compound OC(=O)CCC1=CC=C(O)C=C1 NMHMNPHRMNGLLB-UHFFFAOYSA-N 0.000 description 2
- 230000000243 photosynthetic effect Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 230000027756 respiratory electron transport chain Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- YUKQRDCYNOVPGJ-UHFFFAOYSA-N thioacetamide Chemical compound CC(N)=S YUKQRDCYNOVPGJ-UHFFFAOYSA-N 0.000 description 2
- FFRBMBIXVSCUFS-UHFFFAOYSA-N 2,4-dinitro-1-naphthol Chemical compound C1=CC=C2C(O)=C([N+]([O-])=O)C=C([N+]([O-])=O)C2=C1 FFRBMBIXVSCUFS-UHFFFAOYSA-N 0.000 description 1
- PWKSKIMOESPYIA-UHFFFAOYSA-N 2-acetamido-3-sulfanylpropanoic acid Chemical compound CC(=O)NC(CS)C(O)=O PWKSKIMOESPYIA-UHFFFAOYSA-N 0.000 description 1
- 241000196324 Embryophyta Species 0.000 description 1
- BAWFJGJZGIEFAR-NNYOXOHSSA-N NAD zwitterion Chemical compound NC(=O)C1=CC=C[N+]([C@H]2[C@@H]([C@H](O)[C@@H](COP([O-])(=O)OP(O)(=O)OC[C@@H]3[C@H]([C@@H](O)[C@@H](O3)N3C4=NC=NC(N)=C4N=C3)O)O2)O)=C1 BAWFJGJZGIEFAR-NNYOXOHSSA-N 0.000 description 1
- XJLXINKUBYWONI-NNYOXOHSSA-O NADP(+) Chemical compound NC(=O)C1=CC=C[N+]([C@H]2[C@@H]([C@H](O)[C@@H](COP(O)(=O)OP(O)(=O)OC[C@@H]3[C@H]([C@@H](OP(O)(O)=O)[C@@H](O3)N3C4=NC=NC(N)=C4N=C3)O)O2)O)=C1 XJLXINKUBYWONI-NNYOXOHSSA-O 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 150000003851 azoles Chemical class 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- LHQLJMJLROMYRN-UHFFFAOYSA-L cadmium acetate Chemical compound [Cd+2].CC([O-])=O.CC([O-])=O LHQLJMJLROMYRN-UHFFFAOYSA-L 0.000 description 1
- AJVCUHHHRPBRHU-UHFFFAOYSA-N cadmium nitric acid Chemical compound [Cd].[N+](=O)(O)[O-] AJVCUHHHRPBRHU-UHFFFAOYSA-N 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 230000027721 electron transport chain Effects 0.000 description 1
- 229960004756 ethanol Drugs 0.000 description 1
- 235000019441 ethanol Nutrition 0.000 description 1
- 238000004817 gas chromatography Methods 0.000 description 1
- FDWREHZXQUYJFJ-UHFFFAOYSA-M gold monochloride Chemical compound [Cl-].[Au+] FDWREHZXQUYJFJ-UHFFFAOYSA-M 0.000 description 1
- -1 graphite alkene Chemical class 0.000 description 1
- 239000005457 ice water Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000006193 liquid solution Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229950006238 nadide Drugs 0.000 description 1
- 239000002114 nanocomposite Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000033116 oxidation-reduction process Effects 0.000 description 1
- 239000011941 photocatalyst Substances 0.000 description 1
- 230000029553 photosynthesis Effects 0.000 description 1
- 238000010672 photosynthesis Methods 0.000 description 1
- 239000012286 potassium permanganate Substances 0.000 description 1
- 125000000446 sulfanediyl group Chemical group *S* 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000009210 therapy by ultrasound Methods 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J27/00—Catalysts comprising the elements or compounds of halogens, sulfur, selenium, tellurium, phosphorus or nitrogen; Catalysts comprising carbon compounds
- B01J27/20—Carbon compounds
- B01J27/22—Carbides
- B01J27/224—Silicon carbide
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J35/00—Catalysts, in general, characterised by their form or physical properties
- B01J35/30—Catalysts, in general, characterised by their form or physical properties characterised by their physical properties
- B01J35/39—Photocatalytic properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J35/00—Catalysts, in general, characterised by their form or physical properties
- B01J35/40—Catalysts, in general, characterised by their form or physical properties characterised by dimensions, e.g. grain size
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J35/00—Catalysts, in general, characterised by their form or physical properties
- B01J35/50—Catalysts, in general, characterised by their form or physical properties characterised by their shape or configuration
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B3/00—Hydrogen; Gaseous mixtures containing hydrogen; Separation of hydrogen from mixtures containing it; Purification of hydrogen
- C01B3/02—Production of hydrogen or of gaseous mixtures containing a substantial proportion of hydrogen
- C01B3/04—Production of hydrogen or of gaseous mixtures containing a substantial proportion of hydrogen by decomposition of inorganic compounds, e.g. ammonia
- C01B3/042—Decomposition of water
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2203/00—Integrated processes for the production of hydrogen or synthesis gas
- C01B2203/10—Catalysts for performing the hydrogen forming reactions
- C01B2203/1005—Arrangement or shape of catalyst
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2203/00—Integrated processes for the production of hydrogen or synthesis gas
- C01B2203/10—Catalysts for performing the hydrogen forming reactions
- C01B2203/1041—Composition of the catalyst
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/30—Hydrogen technology
- Y02E60/36—Hydrogen production from non-carbon containing sources, e.g. by water electrolysis
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Combustion & Propulsion (AREA)
- Inorganic Chemistry (AREA)
- Catalysts (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
The present invention discloses a kind of composite material and preparation method, and the composite material includes silicon-carbide particle；It is incorporated in the redox graphene on silicon-carbide particle surface；With the inorganic semiconductor nano particle for being incorporated in redox graphene surface, the conduction band of the inorganic semiconductor nano particle is -1ev ~ 0ev, and valence band is greater than 1.60ev.The composite material is under photo-excitation conditions, electronics on semiconductor nanoparticle conduction band can be transferred in the valence band of silicon carbide by graphene, and then with its hole-recombination, constitute Z-type reaction, degradation occurs in the valence band of semiconductor nanoparticle or produces oxygen reaction, occur to produce hydrogen reaction on the conduction band of silicon carbide, improves photocatalysis performance.
Description
Technical field
The present invention relates to photochemical catalyst field more particularly to a kind of composite material and preparation methods.
Background technique
Titanium dioxide (TiO2) discovery that produces hydrogen and degradation capability opens new era of photochemical catalyst.Research hereafter
In, numerous materials such as pucherite, carbonitride, cadmium sulfide, silicon carbide, which are also found to have, produces hydrogen or degradation capability, this kind of to produce
Hydrogen can be referred to as semiconductor light-catalyst with the material of degradable organic pollutant.They are energy crisis and problem of environmental pollution
Solution provide a satisfactory to both parties thinking, solve energy because photochemical catalyst not only sunlight directly can be converted into Hydrogen Energy
Source crises problem can also irradiate degradable organic pollutant by sunlight and solve problem of environmental pollution.However, real simultaneously
Both existing reactions, which must rely on, has wide light absorption range, steady in a long-term, higher carrier separation efficiency and stronger
The use of the photochemical catalyst of redox ability.Only the photocatalytic system with an a kind of single part (photochemical catalyst) can not be same
When meet above all of requirement.
Summary of the invention
In view of above-mentioned deficiencies of the prior art, the purpose of the present invention is to provide a kind of composite material and preparation method,
Aim to solve the problem that the problem that the optical response range of existing compound composite material is relatively narrow and redox ability is poor.
Technical scheme is as follows:
A kind of composite material, wherein
Silicon-carbide particle；
It is incorporated in the redox graphene on silicon-carbide particle surface；
With the inorganic semiconductor nano particle for being incorporated in redox graphene surface, the inorganic semiconductor nano particle is led
Band is -1ev ~ 0ev, and valence band is greater than 1.60ev.
A kind of preparation method of composite material, wherein comprising steps of
Silicon-carbide particle and graphene are mixed, so that graphene is integrated to silicon-carbide particle surface, obtains to surface and be combined with graphite
The silicon-carbide particle of alkene；
Make graphene surface combination inorganic semiconductor nano particle, obtain the composite material, wherein the inorganic semiconductor is received
The conduction band of rice grain is -1ev ~ 0ev, and valence band is greater than 1.60ev.
The utility model has the advantages that composite material provided by the invention includes silicon-carbide particle, it is incorporated in going back for silicon-carbide particle surface
Former graphene oxide, and it is incorporated in the cadmium sulfide particle on redox graphene surface, composite material of the invention is multi-section
The Z-type photocatalysis body of part often has stronger redox ability compared with traditional hetero-junctions nano composite photo-catalyst.Institute
Composite material is stated under photo-excitation conditions, the electronics on semiconductor nanoparticle conduction band can be transferred to silicon carbide by graphene
In valence band, so with its hole-recombination, constitute Z-type reaction, semiconductor nanoparticle valence band occur degradation or produce oxygen reaction,
Occur to produce hydrogen reaction on the conduction band of silicon carbide, improves photocatalysis performance；Simultaneously because semiconductor nanoparticle is visible light
Response catalyst, silicon carbide is ultraviolet light response catalyst, therefore composite material of the invention can cover the major part of sunlight
The utilization rate to sunlight is improved in region.
Detailed description of the invention
Fig. 1 is the sectional view of composite material preferred embodiment of the present invention.
Fig. 2 is that composite material of the present invention occurs to produce the mechanism figure of hydrogen and degradation reaction.
Specific embodiment
The present invention provides a kind of composite material and preparation method, to make the purpose of the present invention, technical solution and effect more
Add clear, clear, the present invention is described in more detail below.It should be appreciated that specific embodiment described herein is only used
To explain the present invention, it is not intended to limit the present invention.
Referring to Fig. 1, Fig. 1 is a kind of sectional view of composite material preferred embodiment provided by the invention, as shown, institute
Stating composite material includes silicon-carbide particle；It is incorporated in the redox graphene on silicon-carbide particle surface；Be incorporated in oxygen reduction
The inorganic semiconductor nano particle on graphite alkene surface, the conduction band of the inorganic semiconductor nano particle are -1ev ~ 0ev, valence band
Greater than 1.60ev.
Specifically, light-catalyzed reaction carry out should meet thermodynamics and demanding kinetics, both photochemical catalyst was required to have
There is relatively narrow energy gap, generate light induced electron and hole to absorb more luminous energy, and it is appropriate big to require photochemical catalyst to have
Energy gap, so that catalysis reaction occurs with suitable oxidation-reduction potential.It is main to be found to the careful research of photosynthesis of plant
There are two photosystems and a photosynthetic chain composition.Photosystem I I (PS II) absorbs the oxidation reaction of generation water after light, produces
Raw electronics passes to Photosystem I (PS I) by transmission channel " photosynthetic chain ".PS I generates electronics, shape after absorbing luminous energy
At with strong reduction-state Coenzyme I I (NADP) to restore CO2Glucide is generated, and itself is transmitted by PS II
Electron institute reduction.Electron transport chain is "Z"-shaped, and because referred to herein as Z type reacts, the quantum efficiency of the reaction is close to 100%.People
Work Z-type photocatalytic system is made of oxidation reaction catalyst, reduction catalyst and electron mediator.Under light illumination, Z-type light
Two kinds of catalyst of catalyst system generate photogenerated charge, and the light induced electron of oxidation reaction catalyst is migrated to electron mediator, so
It is compound with the photohole of reduction catalyst afterwards, and reduction reaction, oxygen occur for the light induced electron in reduction catalyst
Oxidation reaction occurs for the photohole changed in catalysts.As shown in Fig. 2, the band-gap energy of silicon carbide (SiC) particle is
2.4-3.4 eV is differed, and conduction band positions are relatively negative, valence band location calibration, when being excited by light, the light of the silicon carbide generation
Raw electronics has stronger reproducibility, and the oxidisability of photohole is relatively less prominent, in order to improve photohole
Oxidisability, it is necessary to which, by construction Z-type reaction, finding the composite material corrected than silicon carbide valence band location becomes key.Cause
It is -1ev ~ 0ev that this present invention, which selects conduction band, and valence band is greater than 1.60ev inorganic semiconductor nano particle.But the valence band of silicon carbide
The conduction band positions of position and inorganic semiconductor nano particle are separated by too wide, need to increase a bridge and electrons and holes are easy to
It is compound, bridge (electron mediator) of the selective reduction graphene oxide of the present invention as silicon carbide and inorganic semiconductor nano particle,
Since the fermi level of redox graphene (rGO) is 0 eV, it is in silicon carbide valence band and inorganic semiconductor nano particle is led
Band is intermediate, can effectively reduce energy level difference, is prone to reaction, and graphene is as sp2Hydridization two-dimension plane structure
Substance, planar structure be conducive to composite material construction, good interfacial contact and its high electron transfer rate can have
Effect improves carrier separation efficiency.
In one embodiment, as shown in Figure 1, the composite material includes silicon-carbide particle, redox graphene
With cadmium sulfide particle, cadmium sulfide (CdS) semiconductor nanoparticle is the visible light-responded composite material that band-gap energy is 2.4 eV, right
The response range of light is very wide, and for valence band location just in silicon carbide, conduction band is defeated by silicon carbide, meets Z-type reaction condition.Simultaneously because
CdS semiconduct nano particle is visible light response catalyst, and silicon carbide is ultraviolet light response catalyst, therefore of the invention
Composite material can cover most of region of sunlight, improve the utilization rate to sunlight.
In a wherein embodiment, the preferred photocatalysis performance of silicon carbide is more preferable and has the β-of diamond lattic structure
SiC, as shown in Fig. 2, the band-gap energy of the β-SiC is about 3.0eV, particle is in spherical and stable chemical performance, therefore, β-
SiC powder is easy with graphene ining conjunction with during mixing with graphene and is not susceptible to chemically react generation extra miscellaneous
Matter.
It is described after the silicon-carbide particle mixes in a solvent with graphene dispersion in a wherein specific embodiment
Graphene can coat entirely or partially be coated on the surface of the silicon-carbide particle.
In a wherein embodiment, the partial size of the silicon-carbide particle is 0.5-5 microns.
In a wherein embodiment, the size of the reduced graphene is 100-1000nm, under this size condition, nothing
Machine nano particle energy homoepitaxial on the surface of graphene, will not reunite.
In a wherein embodiment, the partial size of the cadmium sulfide particle is 10-20nm.
Based on above-mentioned composite material, the present invention also provides a kind of preparation methods of composite material, wherein comprising steps of
Silicon-carbide particle and graphene are mixed, so that graphene is integrated to silicon-carbide particle surface, obtains to surface and be combined with graphite
The silicon-carbide particle of alkene；
Make graphene surface combination inorganic semiconductor nano particle, obtain the composite material, wherein the inorganic semiconductor is received
The conduction band of rice grain is -1ev ~ 0ev, and valence band is greater than 1.60ev.
In some embodiments, the carbonization that surface is combined with graphene can be added directly into using by inorganic semiconductor
The stirring of room temperature physical mixed is carried out in silicon or is calcined, and graphene surface combination inorganic semiconductor nano particle is made.
In a preferred embodiment, the surface is combined with to silicon-carbide particle and the cadmium ion forerunner of graphene
Body, the mixing of sulphion presoma grow cadmium sulfide particle on the surface of graphene, obtain the composite material under hydrothermal conditions.
In a wherein embodiment, graphene is prepared using Hummers method, and graphite powder is added to phosphoric acid and sulphur
Sour in the mixed solvent is slowly added to potassium permanganate after ice-water bath stirring and continues to stir；Continue that quality is added dropwise in the mixed solvent
The hydrogen peroxide that score is 30% becomes golden yellow up to mixture, and product is centrifuged and washes away extra metal ion with hydrochloric acid
After be centrifuged repeatedly, until pH be 7, be made graphene.
In a wherein embodiment, the silicon-carbide particle is pre-processed before use, in 600-800oC
Under the conditions of silicon-carbide particle is calcined, remove silicon-carbide particle on residual organic matter, the silicon carbide of organic matter will be removed
Particle is immersed in hydrofluoric acid, the less silicon-carbide particle of surface oxidation content is made, oxide is fewer, and electric conductivity is got over
It is good.Preferably, silicon-carbide particle is placed on 600-800 in Muffle furnaceoC calcines 3h and removes organic substance residues, then in quality
Score is to impregnate to remove its oxide on surface for 24 hours in 40% hydrofluoric acid, after being cleaned with deionized water, is placed on 60 in drying boxoC
Dry 12h obtains pretreated silicon-carbide particle.
The pretreated silicon-carbide particle and the graphene are mixed according to the ratio that weight ratio is 1:0.025-0.125
It closes, the silicon-carbide particle that surface is combined with graphene can be obtained.Graphene is few, and specific surface area is small, electron transfer rate decline, drop
Low photocatalytic performance；Graphene is more, and electronics easily disperses, and is unfavorable for being transferred to silicon carbide valence band, reduces Z-type structure electrical transmitting effect
Rate reduces photocatalysis performance.
In a kind of specific embodiment, disperse pretreated silicon-carbide particle in solvent and be added graphene into
Mixed solution, is then transferred in autoclave by row mixing, and 6-24h is heated at 120-180 DEG C to be combined with to surface
The silicon-carbide particle of graphene, with deionized water and dehydrated alcohol respectively to the product cleaning, after drying in the agate mortar
It is ground to powder, obtains to surface and is combined with the silicon carbide powder of graphene, it is spare.
Preferably, the solvent is selected from one of deionized water, ethyl alcohol, ethylene glycol and glycerine or a variety of but unlimited
In this.
In a wherein embodiment, according to the ratio that molar ratio is 1:1-1:2 by cadmium ion precursor solution and sulphur from
Sub- precursor solution, which is added to surface and is combined in the silicon carbide suspension of graphene, to be mixed, under hydrothermal conditions, in graphene
Surface grows cadmium sulfide particle, obtains the composite material.Fig. 1 is the sectional view of composite material prepared by the present invention, as schemed institute
Show, the redox graphene is incorporated in silicon-carbide particle surface, described by cadmium ion presoma and sulphion forerunner's bodily form
At CdS semiconduct nano particle be then incorporated in the surface of redox graphene.
In a preferred embodiment, deionized water is dispersed by the silicon carbide powder that surface is combined with graphene
In, the silicon carbide suspension for being combined with graphene to surface is obtained after ultrasonic treatment, and cadmium ion forerunner is added in Xiang Suoshu suspension
Liquid solution and sulphion precursor solution simultaneously stir, and are transferred in reaction kettle later and carry out hydro-thermal process, given birth on the surface of graphene
Long cadmium sulfide particle, obtains the composite material.It, can will be described in the case where not increasing any impurity by hydro-thermal process
Graphene is reduced to redox graphene, and composite material of the invention is prepared, and preparation process is simple, and condition is controllable, can
To realize the growth in situ of the reduction of graphene, the synthesis and cadmium sulfide of cadmium sulfide on graphene simultaneously.
Preferably, the temperature of the hydro-thermal process is 160-200 DEG C,
Preferably, the time of the hydro-thermal process is 12-24h.
Preferably, the cadmium ion precursor solution is selected from one of cadmium nitrate, caddy and acetic acid cadmium solution or more
Kind, but not limited to this.
Preferably, the sulphion precursor solution is selected from vulcanized sodium, thiocarbamide, L-cysteine, thioacetamide and thiophene
One of azoles solution is a variety of, but not limited to this.
For composite material prepared by the present invention under photo-excitation conditions, the electronics on the cadmium sulfide conduction band can pass through graphene
Be transferred in the valence band of silicon carbide, so with its hole-recombination, constitute Z-type reaction, cadmium sulfide valence band occur degradation or produce
Oxygen reaction occurs to produce hydrogen reaction on the conduction band of silicon carbide, improves photocatalysis performance；Simultaneously because cadmium sulfide is visible light-responded
Catalyst, silicon carbide is ultraviolet light response catalyst, therefore composite material of the invention can cover most of region of sunlight,
Improve the utilization rate to sunlight.
Further, composite material prepared by the present invention can be used for degradation of methylene blue solution, and specific implementation method includes
Following steps:
1) silicon-carbide particle for, taking 0.2g composite material of the present invention and surface to be combined with graphene is respectively dispersed in 500 mL
Concentration is blowing air in the methylene blue solution of 10 mg/L, and 30 min of absorption-balance under dark condition is powered, lights 125W
High-pressure sodium lamp takes 10 mL solution every 30 min, turns off the light after 2 h.
2), the solution example of acquirement is put under 3000 rpm of centrifuge and is centrifuged 10 min, tests absorbance, calculates degradation
Rate.The test result that type of sample optium concentration where being below obtains:
Degradation rate is 42% after the silicon-carbide particle that surface is combined with graphene tests 2 h, and carbide-graphite of the present invention alkene-sulphur
Degradation rate is 71% after cadmium (composite material) tests 2 h.Trielement composite material carbide-graphite alkene-cadmium sulfide degradation rate compared with
The silicon-carbide particle that binary composite surface is combined with graphene improves a lot, and illustrates silicon carbide, graphene, cadmium sulfide Z
Type structure works, and improves the separative efficiency of electrons and holes.
Further, composite material of the present invention can also carry out producing hydrogen reaction, and specific implementation method includes the following steps:
The silicon-carbide particle for taking 50 mg composite material of the present invention and surface to be combined with graphene is respectively dispersed in 200 mL
In distilled water, the chloroplatinic acid or gold chloride that 1mL concentration is 1 mmol/L is added, vacuumizes, xenon lamp irradiating sample is opened, every 1
H takes a sample, squeezes into gas-chromatography, counts peak area, turns off the light after 4 h, calculates hydrogen output.Type of sample where being below is most
The test result that good concentration obtains:
Hydrogen output is 205.6 μm of ol g after the silicon-carbide particle that surface is combined with graphene tests 4 h-1∙h-1, silicon carbide-stone
Hydrogen output is 1057.1 μm of ol g after black alkene-cadmium sulfide (composite material) tests 4 h-1∙h-1.Trielement composite material silicon carbide-
The hydrogen output of graphene-sulfur cadmium is improved largely compared with the silicon-carbide particle that binary composite surface is combined with graphene,
Illustrate that silicon carbide, graphene, cadmium sulfide Z-type structure work, improves the separative efficiency of electrons and holes.
It is described in detail below by preparation method of the embodiment to composite material.
Embodiment 1: below for preparing composite material using graphene, silicon-carbide particle, cadmium nitrate and vulcanized sodium into
Row is discussed in detail.
(1) pretreatment of silicon-carbide particle: commercialized silicon-carbide particle is placed on 600 in Muffle furnaceoC calcines 3 h
Organic substance residues are removed, 24 h removal oxide on surface is impregnated in 40% hydrofluoric acid, is cleaned with a large amount of deionized waters, vacuum
60 in drying boxoC is dry, and 12 h obtain pretreated silicon-carbide particle；
(2) surface is combined with the preparation of the silicon-carbide particle of graphene: by the pretreated silicon carbide powder ultrasonic disperse of 200 mg
In 35 mL deionized waters, it is added and the graphene solution that 1mL concentration is 5 mg/mL is prepared by traditional Hummers method,
30 min of ultrasound, transfer them in 50 mL autoclaves, 180o24 h are reacted under C, with deionized water and dehydrated alcohol
Each cleaning 3 times, 80 in vacuum ovenoDry 12 h, are ground to powder in the agate mortar and are combined with to get to surface under C
The silicon-carbide particle of graphene；
(3) above-mentioned surface carbide-graphite alkene-cadmium sulfide composite material preparation: is combined with to the silicon-carbide particle of graphene
It is dispersed in 35 mL deionized waters, 30 min of ultrasound obtain the carbide-graphite alkene of different graphene oxide doped amounts
Suspension, then the nitric acid cadmium solution that 5 mL concentration are 1 mol/L is added thereto, the sulphur that 5 mL concentration are 1 mol/L is added dropwise
Change sodium solution (cadmium source and sulphur source molar ratio be 1:1), is transferred to 180 in reaction kettle after stirring 2 hoC reacts 12 h.Spend from
Sub- water and dehydrated alcohol respectively clean 3 times, 80 in vacuum ovenoDry 12 h, are ground to powder, i.e., in the agate mortar under C
Obtain carbide-graphite alkene-cadmium sulfide composite material.
The carbide-graphite alkene that embodiment 1 is obtained-cadmium sulfide sample carries out methylene blue solution degradation test, measures 2
Methylene blue degradation rate is 71% after h；Carbide-graphite alkene-cadmium sulfide sample that embodiment 1 is obtained carries out producing hydrogen test, surveys
Hydrogen output is 302.6 μm of ol g after obtaining 4 h-1∙h-1。
Embodiment 2: it is to prepare composite material using graphene, silicon-carbide particle, cadmium acetate and thioacetamide below
Example describes in detail.
(1) pretreatment of silicon-carbide particle: commercialized silicon-carbide particle is placed on 800 in Muffle furnaceoC calcines 3 h
Organic substance residues are removed, 24 h removal oxide on surface is impregnated in 40% hydrofluoric acid, is cleaned with a large amount of deionized waters, vacuum
60 in drying boxoC is dry, and 12 h obtain pretreated silicon-carbide particle；
(2) surface is combined with the preparation of the silicon-carbide particle of graphene: by the pretreated silicon-carbide particle ultrasonic disperse of 200 mg
In the in the mixed solvent of 10 mL ethylene glycol and 25 mL deionized waters, it is added that 5 mL are prepared by traditional Hummers method is dense
Degree is the graphene oxide solution of 5 mg/mL, and 30 min of ultrasound are transferred them in 50 mL autoclaves, 150oIt is anti-under C
12 h are answered, are respectively cleaned 3 times with deionized water and dehydrated alcohol, 80 in vacuum ovenoDry 12 h under C, in the agate mortar
Powder is ground to get the silicon-carbide particle of graphene is combined with to surface；
(3) above-mentioned surface carbide-graphite alkene-cadmium sulfide composite material preparation: is combined with to the silicon-carbide particle of graphene
It is dispersed in 35 mL deionized waters, 30 min of ultrasound, the carbide-graphite alkene for obtaining different graphene dopings is suspended
Liquid, then the acetic acid cadmium solution that 5 mL concentration are 0.2 mol/L is added thereto, it is the thio of 0.2 mol/L that 5 mL concentration, which are added dropwise,
Acetamide solution (cadmium source and sulphur source molar ratio be 1:1) is transferred to 180 in reaction kettle after stirring 2 hoC reacts 24 h.It spends
Ionized water and dehydrated alcohol respectively clean 3 times, 80 in vacuum ovenoDry 12 h, are ground to powder in the agate mortar under C,
Obtain carbide-graphite alkene-cadmium sulfide composite material.
The carbide-graphite alkene that embodiment 2 is obtained-cadmium sulfide sample carries out methylene blue solution degradation test, measures 2
Methylene blue degradation rate is 52% after h；Carbide-graphite alkene-cadmium sulfide sample that embodiment 2 is obtained carries out producing hydrogen test, surveys
Hydrogen output is 571.4 μm of ol g after obtaining 4 h-1∙h-1。
Embodiment 3: it is carried out for preparing composite material using graphene, silicon-carbide particle, caddy and thiocarbamide below
It is discussed in detail.
(1) pretreatment of silicon-carbide particle: commercialized silicon-carbide particle is placed on 800 in Muffle furnaceoC calcines 3 h
Organic substance residues are removed, 24 h removal oxide on surface is impregnated in 40% hydrofluoric acid, is cleaned with a large amount of deionized waters, vacuum
60 in drying boxoC is dry, and 12 h obtain pretreated silicon-carbide particle；
(2) surface is combined with the preparation of the silicon-carbide particle of graphene: by the pretreated silicon-carbide particle ultrasonic disperse of 200 mg
In the in the mixed solvent of 5mL ethylene glycol, 5 mL glycerine and 25 mL deionized waters, addition is prepared by traditional Hummers method
The graphene solution for being 5 mg/mL to 2 mL concentration, 30 min of ultrasound are transferred them in 50 mL autoclaves, 120oC
12 h of lower reaction, are respectively cleaned 3 times with deionized water and dehydrated alcohol, 80 in vacuum ovenoDry 12 h, grind in agate under C
Powder is ground in alms bowl to get the silicon-carbide particle of graphene is combined with to surface；
(3) above-mentioned surface carbide-graphite alkene-cadmium sulfide composite material preparation: is combined with to the silicon-carbide particle of graphene
It is dispersed in 35 mL deionized waters, 30 min of ultrasound, the carbide-graphite alkene for obtaining different graphene dopings is suspended
Liquid, then the cadmium chloride solution that 5 mL concentration are 0.01 mol/L is added thereto, the sulphur that 5 mL concentration are 0.01 mol/L is added dropwise
Urea solution (cadmium source and sulphur source molar ratio be 1:1) is transferred to 180 in reaction kettle after stirring 2 hoC reacts 18 h.Use deionization
Water and dehydrated alcohol respectively clean 3 times, 80 in vacuum ovenoDry 12 h under C, be ground in the agate mortar powder to get
To carbide-graphite alkene-cadmium sulfide composite material.
The carbide-graphite alkene that embodiment 3 is obtained-cadmium sulfide sample carries out methylene blue solution degradation test, measures 2
Methylene blue degradation rate is 61.9% after h；Carbide-graphite alkene-cadmium sulfide sample that embodiment 3 is obtained carries out producing hydrogen test,
Hydrogen output is 816.2 μm of ol g after measuring 4 h-1∙h-1。
Embodiment 4: it is carried out for preparing composite material using graphene, silicon-carbide particle, caddy and thiocarbamide below
It is discussed in detail.
(1) pretreatment of silicon-carbide particle: commercialized silicon-carbide particle is placed on 800 in Muffle furnaceoC calcines 3 h
Organic substance residues are removed, 24 h removal oxide on surface is impregnated in 40% hydrofluoric acid, is cleaned with a large amount of deionized waters, vacuum
60 in drying boxoC is dry, and 12 h obtain pretreated silicon-carbide particle；
(2) surface is combined with the preparation of the silicon-carbide particle of graphene: by the pretreated silicon-carbide particle ultrasonic disperse of 200 mg
In the in the mixed solvent of 5mL ethylene glycol, 5 mL glycerine and 25 mL deionized waters, addition is prepared by traditional Hummers method
The graphene solution for being 5 mg/mL to 2.5 mL concentration, 30 min of ultrasound are transferred them in 50 mL autoclaves, 120o6h is reacted under C, is respectively cleaned 3 times with deionized water and dehydrated alcohol, 80 in vacuum ovenoDry 12 h, grind in agate under C
Powder is ground in alms bowl to get the silicon-carbide particle of graphene is combined with to surface；
(3) above-mentioned surface carbide-graphite alkene-cadmium sulfide composite material preparation: is combined with to the silicon-carbide particle of graphene
It is dispersed in 35 mL deionized waters, 30 min of ultrasound obtain the carbide-graphite alkene of different graphene oxide doped amounts
Suspension, then the cadmium chloride solution that 5 mL concentration are 0.5mol/L is added thereto, the sulphur that 5 mL concentration are 0.5 mol/L is added dropwise
Urea solution (cadmium source and sulphur source molar ratio be 1:1) is transferred to 180 in reaction kettle after stirring 2 hoC reacts 18 h.Use deionization
Water and dehydrated alcohol respectively clean 3 times, 80 in vacuum ovenoDry 12 h under C, be ground in the agate mortar powder to get
To carbide-graphite alkene-cadmium sulfide composite material.
The carbide-graphite alkene that embodiment 4 is obtained-cadmium sulfide sample carries out methylene blue solution degradation test, measures 2
Methylene blue degradation rate is 48.6% after h；Carbide-graphite alkene-cadmium sulfide sample that embodiment 4 is obtained carries out producing hydrogen test,
Hydrogen output is 1057.1 μm of ol g after measuring 4 h-1∙h-1。
In conclusion composite material provided by the invention is coated on the graphene of silicon carbide and is grown in graphene
The cadmium sulfide on surface, under photo-excitation conditions, the electronics on cadmium sulfide conduction band can be transferred to the composite material by graphene
In the valence band of silicon carbide, so with its hole-recombination, constitute Z-type reaction, cadmium sulfide valence band occur degradation or produce oxygen reaction,
Occur to produce hydrogen reaction on the conduction band of silicon carbide, improves photocatalysis performance；Simultaneously because cadmium sulfide is visible light-responded catalysis
Agent, silicon carbide is ultraviolet light response catalyst, therefore composite material of the invention can cover most of region of sunlight, is improved
To the utilization rate of sunlight.
It should be understood that the application of the present invention is not limited to the above for those of ordinary skills can
With improvement or transformation based on the above description, all these modifications and variations all should belong to the guarantor of appended claims of the present invention
Protect range.
Claims (10)
1. a kind of composite material characterized by comprising
Silicon-carbide particle；
It is incorporated in the redox graphene on silicon-carbide particle surface；
With the inorganic semiconductor nano particle for being incorporated in redox graphene surface, the inorganic semiconductor nano particle is led
Band is -1ev ~ 0ev, and valence band is greater than 1.60ev.
2. composite material according to claim 1, which is characterized in that the silicon-carbide particle is with diamond lattic structure
β-SiC；And/or the partial size of the silicon-carbide particle is 0.5-5 microns.
3. composite material according to claim 1, which is characterized in that the size of the graphene is 100-1000 nanometers.
4. composite material according to claim 1, which is characterized in that the inorganic semiconductor nano particle is cadmium sulfide
Grain.
5. a kind of preparation method of composite material, which is characterized in that comprising steps of
Silicon-carbide particle and graphene are mixed, so that graphene is integrated to silicon-carbide particle surface, obtains to surface and be combined with graphite
The silicon-carbide particle of alkene；
Make graphene surface combination inorganic semiconductor nano particle, obtain the composite material, wherein the inorganic semiconductor is received
The conduction band of rice grain is -1ev ~ 0ev, and valence band is greater than 1.60ev.
6. the preparation method of composite material according to claim 5, which is characterized in that press the silicon-carbide particle and graphite
The weight ratio of alkene is 1:0.025-0.125, and silicon-carbide particle and graphene are mixed.
7. the preparation method of composite material according to claim 5, which is characterized in that mix silicon-carbide particle and graphene
It closes, so that graphene is integrated to 120-180 DEG C of temperature of silicon-carbide particle surface, obtain to surface and be combined with the silicon carbide of graphene
Particle.
8. the preparation method of composite material according to claim 5, which is characterized in that the inorganic semiconductor nano particle
For cadmium sulfide particle.
9. the preparation method of composite material according to claim 8, which is characterized in that the surface is combined with graphene
Silicon-carbide particle mixed with cadmium ion presoma, sulphion presoma, hydrothermal condition under, grow sulphur on the surface of graphene
Cadmium particle makes graphene surface combination inorganic semiconductor nano particle, obtains the composite material.
10. the preparation method of composite material according to claim 5, which is characterized in that the surface is being combined with stone
In the step of silicon-carbide particle of black alkene is mixed with cadmium ion presoma, sulphion presoma, the cadmium ion presoma and sulphur
The molar ratio of ion presoma is 1:1-1:2.
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