CN110350875B - Drive amplifier - Google Patents

Drive amplifier Download PDF

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CN110350875B
CN110350875B CN201910565359.6A CN201910565359A CN110350875B CN 110350875 B CN110350875 B CN 110350875B CN 201910565359 A CN201910565359 A CN 201910565359A CN 110350875 B CN110350875 B CN 110350875B
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triode
circuit
network transformer
stage
electrode
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CN110350875A (en
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伍晶
张旭
罗文玲
裘华英
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/4508—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using bipolar transistors as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/447—Indexing scheme relating to amplifiers the amplifier being protected to temperature influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/534—Transformer coupled at the input of an amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/537—A transformer being used as coupling element between two amplifying stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/541—Transformer coupled at the output of an amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H03F2203/21127—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers the input bias current of a power amplifier being controlled, e.g. by an active current source or a current mirror
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45172—A transformer being added at the input of the dif amp
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45228—A transformer being added at the output or the load circuit of the dif amp
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45731—Indexing scheme relating to differential amplifiers the LC comprising a transformer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00—Reducing energy consumption in communication networks
    • Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

The invention discloses a driving amplifier, wherein an output stage circuit, an intermediate stage circuit and an input stage circuit of the driving amplifier realize gain superposition in a cascading mode, and each two stages of circuits are matched by adopting a network transformer, so that the maximum output of gain and power between the two stages of circuits is realized; according to the invention, the first base bias circuit, the second base bias circuit and the third base bias circuit are used for providing static bias currents for the output stage circuit, the intermediate stage circuit and the input stage circuit respectively so as to compensate the difference of the amplifying tubes at high and low temperatures, and the temperature robustness of the driving amplifying circuit is improved.

Description

Drive amplifier
Technical Field
The invention relates to the field of wireless communication, in particular to a driving amplifier which can be applied to a radio frequency system in a millimeter waveband.
Background
The driving amplifier is widely applied to a radio frequency system in a millimeter wave frequency band, and is used for amplifying a front-stage input signal and linearly pushing a rear-stage circuit to enable the rear-stage circuit to normally work, so that the gain of the radio frequency system is improved. The gain of the driver amplifier and the output power at the 1dB compression point (the amplifier has a linear dynamic range in which the output power of the amplifier linearly increases with the input power and continues to increase with the input power, the amplifier enters a nonlinear region, the output power of the amplifier is lower than the expected value of the signal gain, and the output power value when the gain is reduced to 1dB lower than the linear gain is generally defined as the output power at the 1dB compression point) are key design indexes, and the performance of the amplifier determines the performance of the radio frequency system to a certain extent. Since the actual operating environment of the system is much more complex than the design environment, for example, the operating environment temperature is far lower or higher than the room temperature, it is important to reduce the sensitivity of the driver amplifier to the temperature. A good performing driver amplifier should not only focus on the gain and output power at the 1dB compression point, but also on the temperature sensitivity of these two criteria. Only if the robustness of the design index to the temperature is high, namely the output power of the gain and the 1dB compression point is small in fluctuation degree along with the temperature, the amplifier can become a driving amplifier with good performance so as to adapt to a complex actual temperature environment. There is therefore a continuing market need for high performance driver amplifiers that are less temperature sensitive.
Considering that the driver amplifier is integrated in the rf system chip, the optimal design effect should be achieved with the smallest layout area and the lowest complexity. The amplifier of the prior art design uses a bias circuit as shown in fig. 1 to achieve that the bias current remains relatively stable over a large temperature range. R in its bias circuit 0 ，R 1 ，R 2 ，Q 0 ，Q 2 The amplifier Q is enabled by a negative feedback process 3 The bias current of (2) is stabilized over a wide temperature range. The working principle is as follows: when the temperature rises, flows through Q 0 ，Q 2 Current of (I) c0 ，I b0 ，I b2 ，I e2 Increase to flow through R 2 ，R 0 Respectively, increases. R 2 ，R 0 Increasing the pressure drop across the transistor increases Q 0 ，Q 2 V of BE0 And V BE2 Decrease, make I c0 ，I b0 ，I b2 ，I e2 And decrease.
However, the bias circuit design of the amplifier designed in the prior art only considers that the output current of the bias circuit has small fluctuation in a large temperature range, but does not consider the bias circuit as a whole with the amplifier. In fact, the ac amplification capability of the amplifier tube at high temperature is much smaller than that at low temperature, and if the bias current input to the amplifier tube at high temperature and low temperature is kept relatively constant within the temperature fluctuation range, the signal amplification capability of the amplifier tube at high temperature is much smaller than that at low temperature, so that the performance difference of the amplifier at high temperature and low temperature is large, the robustness to temperature cannot be maintained, and the amplifier cannot work well in a complex temperature environment.
It is seen that how to improve the robustness of the temperature of the driving amplifier including the bias circuit and the amplifier tube becomes a technical problem to be solved.
Disclosure of Invention
It is an object of the present invention to provide a driver amplifier to improve the robustness of the temperature of the driver amplifier.
In order to achieve the purpose, the invention provides the following scheme:
the present invention provides a driver amplifier, comprising: the circuit comprises an output stage network transformer, an output stage circuit, a first inter-stage network transformer, an intermediate stage circuit, a second inter-stage network transformer, an input stage circuit, an input stage network transformer, a first base bias circuit, a second base bias circuit and a third base bias circuit;
the input end of the input stage network transformer is connected with an input signal, the output end of the input stage network transformer is connected with the input end of the input stage circuit, the output end of the input stage circuit is connected with the input end of the second inter-stage network transformer, the output end of the second inter-stage network transformer is connected with the input end of the intermediate stage circuit, the output end of the intermediate stage circuit is connected with the input end of the first inter-stage network transformer, the output end of the first inter-stage network transformer is connected with the input end of the output stage circuit, the output end of the output stage circuit is connected with the input end of the output stage network transformer, and the output end of the output stage network transformer outputs a driving signal;
the output end of the first base electrode bias circuit is connected with a middle tap of a secondary coil of the first inter-stage network transformer, and the first base electrode bias circuit is used for providing a first static bias current for the output stage circuit so as to compensate the difference of the amplifying tubes at high and low temperatures of the output stage circuit;
the output end of the second base electrode bias circuit is connected with a middle tap of a secondary coil of the second inter-stage network transformer, and the second base electrode bias circuit is used for providing a second static bias current for the intermediate-stage circuit so as to compensate the difference of the amplifying tubes at high and low temperatures of the intermediate-stage circuit;
the output end of the third base bias circuit is connected with a middle tap of a secondary coil of the input stage network transformer, and the third base bias circuit is used for providing a third static bias current for the input stage circuit so as to compensate the high and low temperature amplification tube difference of the input stage circuit.
The intermediate taps of the primary coils of the output stage network transformer, the first inter-stage network transformer, the second inter-stage network transformer and the input stage network transformer are connected with the positive electrode of the control power supply. The center tap of the secondary coil of the output stage network transformer is the same as the center tap of the input stage network transformer, and the center taps are suspended and are not connected.
Optionally, the first base bias circuit includes: the circuit comprises a first triode, a second triode, a third triode, a thermistor and an isolation resistor;
the collector of the first triode is connected with the positive electrode of a bias power supply through the thermistor, the emitter of the first triode is connected with the collector of the third triode, and the emitter of the third triode is connected with the negative electrode of the bias power supply;
the base electrode of the first triode, the collector electrode of the first triode and the base electrode of the second triode are connected, the collector electrode of the second triode is connected with the positive electrode of the bias power supply, the emitting electrode of the second triode is connected with a middle tap of a secondary coil of the first inter-stage network transformer, and the emitting electrode of the second triode is further connected with the base electrode of the third triode through the isolation resistor.
Optionally, the thermistor is a positive temperature coefficient thermistor.
Optionally, the resistance value of the isolation resistor is greater than 8 kilo-ohms.
Optionally, the first triode, the second triode and the third triode are all NPN-type triodes.
Optionally, the output stage circuit includes: a fourth triode and a fifth triode;
an emitting electrode of the fourth triode is connected with an emitting electrode of the fifth triode and is connected with a negative electrode of the control power supply;
the base electrode of the fourth triode and the base electrode of the fifth triode are respectively connected to two ends of the secondary coil of the first inter-stage network transformer;
and the collector electrode of the fourth triode and the collector electrode of the fifth triode are respectively connected to two ends of the primary coil of the output stage network transformer.
Optionally, the output stage circuit further includes: the circuit comprises a first resistor, a first capacitor, a second resistor and a second capacitor;
the first resistor and the first capacitor are connected in series between the base electrode and the collector electrode of the fourth triode;
and the second resistor and the second capacitor are connected in series between the base electrode and the collector electrode of the fifth triode.
Optionally, the fourth triode and the fifth triode are both NPN-type triodes.
According to the specific embodiment provided by the invention, the invention discloses the following technical effects:
the invention discloses a driving amplifier, comprising: the circuit comprises an output stage network transformer, an output stage circuit, a first inter-stage network transformer, an intermediate stage circuit, a second inter-stage network transformer, an input stage circuit, an input stage network transformer, a first base bias circuit, a second base bias circuit and a third base bias circuit; the output end of the first base electrode bias circuit is connected with a middle tap of a secondary coil of the first inter-stage network transformer, and the first base electrode bias circuit is used for providing a first static bias current for the output stage circuit so as to compensate the difference of the amplifying tubes at high and low temperatures of the output stage circuit; the output stage circuit, the intermediate stage circuit and the input stage circuit realize the superposition of gain in a cascading mode, and the maximum output of the gain and the power between the two stages of circuits is realized by adopting the matching of network transformers between the two stages of circuits; according to the invention, the first base electrode bias circuit, the second base electrode bias circuit and the third base electrode bias circuit respectively provide static bias currents for the output stage circuit, the intermediate stage circuit and the input stage circuit so as to compensate the difference of the amplifying tubes at high and low temperatures, and the temperature robustness of the driving amplifying circuit is improved.
The RC network is connected in series between the fourth triode and the fifth triode of the invention, and the stability of the amplifier is improved by forming negative feedback.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a circuit configuration diagram of a conventional bias circuit;
fig. 2 is a circuit structure diagram of a driving amplifier provided by the present invention;
FIG. 3 is a circuit diagram of a bias circuit provided by the present invention;
fig. 4 is a schematic diagram of the high and low temperature static bias points of the driving amplifier provided by the present invention.
Detailed Description
It is an object of the present invention to provide a driver amplifier to improve the robustness of the temperature of the driver amplifier.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
As shown in fig. 2, the present invention provides a driver amplifier, comprising: an output stage network transformer 1, an output stage circuit 2, a first inter-stage network transformer 3, an intermediate stage circuit 4, a second inter-stage network transformer 5, an input stage circuit 6, an input stage network transformer 7, a first base bias circuit (not shown in fig. 2), a second base bias circuit (not shown in fig. 2), and a third base bias circuit (not shown in fig. 2); the input end of the input stage network transformer 7 is connected with an input signal, the output end of the input stage network transformer 7 is connected with the input end of the input stage circuit 6, the output end of the input stage circuit 6 is connected with the input end of the second inter-stage network transformer 5, the output end of the second inter-stage network transformer 5 is connected with the input end of the intermediate stage circuit 4, the output end of the intermediate stage circuit 4 is connected with the input end of the first inter-stage network transformer 3, the output end of the first inter-stage network transformer 3 is connected with the input end of the output stage circuit 2, the output end of the output stage circuit 2 is connected with the input end of the output stage network transformer 1, and the output end of the output stage network transformer 1 outputs a driving signal.
The output end of the first base electrode bias circuit is connected with a middle tap of a secondary coil of the first inter-stage network transformer 3, and the first base electrode bias circuit is used for providing a first static bias current for the output stage circuit 2 so as to compensate the difference of the amplifying tubes of the output stage circuit 2 at high and low temperatures.
The output end of the second base bias circuit is connected with a middle tap of a secondary coil of the second inter-stage network transformer 5, and the second base bias circuit is used for providing a second static bias current for the intermediate-stage circuit 4 so as to compensate the difference of the amplifying tubes of the intermediate-stage circuit 4 at high and low temperatures.
The output end of the third base bias circuit is connected with a middle tap of a secondary coil of the input stage network transformer 7, and the third base bias circuit is used for providing a third static bias current for the input stage circuit 6 so as to compensate the high and low temperature amplification tube difference of the input stage circuit 6.
The intermediate taps of the primary coils of the output stage network transformer, the first inter-stage network transformer, the second inter-stage network transformer and the input stage network transformer are connected with the positive electrode of the control power supply.
Wherein the output stage circuit comprises: the driving circuit comprises a fourth triode M1, a fifth triode M2, a first resistor R1, a first capacitor C1, a second resistor R2 and a second capacitor C2; an emitting electrode of the fourth triode M1 is connected with an emitting electrode of the fifth triode M2 and is connected with a negative electrode of a control power supply; the base electrode of the fourth triode M1 and the base electrode of the fifth triode M2 are respectively connected to two ends of the secondary coil of the first inter-stage network transformer N2; and the collector electrode of the fourth triode M1 and the collector electrode of the fifth triode M2 are respectively connected to two ends of the primary coil of the output stage network transformer N1. The first resistor R1 and the first capacitor C1 are connected in series between the base electrode and the collector electrode of the fourth triode M1; the second resistor R2 and the second capacitor C2 are connected in series between the base electrode and the collector electrode of the fifth triode M2. The fourth triode M1 and the fifth triode M2 are both NPN-type triodes.
The circuit structure of the intermediate-stage circuit is the same as that of the output-stage circuit, and the intermediate-stage circuit is composed of NPN tubes M3 and M4, resistors R3 and R4 and capacitors C3 and C4. The emitters of M3 and M4 are connected to ground (negative of the control supply). The collectors of M3 and M4 are respectively connected to two ports of the primary coil of the inter-stage network transformer N2, and are connected to a control power supply VDD through a middle tap of the primary coil of the N2. The bases of M3 and M4 are respectively connected to two ports of the secondary coil of the inter-stage network transformer N3, and base bias current I _ bias2 is provided through the middle tap of the secondary coil of N3. R3 and C3 are coupled in series between the base and collector of M3, and R4 and C4 are coupled in series between the base and collector of M4.
The circuit structure of the input stage circuit is the same as that of the output stage circuit, and the input stage circuit is composed of NPN tubes M5 and M6, resistors R5 and R6 and capacitors C5 and C6. The emitters of M5 and M6 are connected to ground. The collectors of M5 and M6 are respectively connected to two ports of the primary coil of the inter-stage network transformer N3, and are connected to a power supply VDD through a middle tap of the primary coil of the N3. The bases of M5 and M6 are respectively connected to two ports of the secondary coil of the input stage network transformer N4, and base bias current I _ bias3 is provided through the middle tap of the secondary coil of N4. R5 and C5 are connected in series between the base and collector of M5, and R6 and C6 are connected in series between the base and collector of M6.
As shown in fig. 3, the first base bias circuit includes: the circuit comprises a first triode M7, a second triode M8, a third triode M9, a thermistor R7 and an isolation resistor R8; the collector of the first triode M7 is connected with the positive electrode Vbias of a bias power supply through the thermistor R7, the emitter of the first triode M7 is connected with the collector of the third triode M9, and the emitter of the third triode M9 is connected with the negative electrode (ground) of the bias power supply; the base electrode of the first triode M7, the collector electrode of the first triode M7 and the base electrode of the second triode M8 are connected, the collector electrode of the second triode M8 is connected with the positive electrode of the bias power supply, the emitter electrode of the second triode M8 is connected with the middle tap of the secondary coil of the first inter-stage network transformer, and the emitter electrode of the second triode M8 is further connected with the base electrode of the third triode M9 through the isolation resistor R8. The first triode M7, the second triode M8 and the third triode M9 are all NPN-type triodes.
The second base bias circuit and the third base bias circuit have the same circuit structure, and can be configured according to the circuit structure shown in fig. 3.
The advantages of the invention are deduced in a rational manner as follows: the relationship between the applied voltage u of the PN junction and the current i flowing through it is:
Figure BDA0002109429480000061
wherein Is reverse saturation current, q Is electric quantity of electrons, k Is Boltzmann constant, and T Is thermodynamic temperature. Using U as kT/q in the above formula T Substitution, then obtaining
Figure BDA0002109429480000062
The emitter junction of the triode is forward biased when the triode works in a saturation region, and when a forward voltage is applied to the PN junction, U & gt U T When it is, then
Figure BDA0002109429480000071
I.e. i varies exponentially with u. When the temperature rises, on the one hand, the ac amplification capability is deteriorated because the internal PN junction capacitance becomes large, and on the other hand, a large amount of charge is baiton end-tied to become free charge without being controlled by the base. Therefore, as shown in fig. 4, the transistor needs to be biased at a point a where the static bias current is low at low temperature and biased at a point B where the static bias current is high at high and low temperatures. When the input power and the source impedance are constantThe swing of the alternating voltage input to the base electrode of the triode is the same for the point A and the point B, and because the slope of the point A is smaller and the slope of the point B is larger, the swing of the base alternating current biased at the point B at high and low temperatures is larger than the swing of the base alternating current at the point A at low temperatures. And because the alternating current amplification capacity of the triode at low temperature is higher than that at high and low temperature, the amplitude of alternating current obtained at the collector of the load end at low temperature and high and low temperature is approximately equal by carefully adjusting the static bias current at low temperature and high and low temperature. For example, when the ac amplification factor at low temperature is three times that at high and low temperatures, the quiescent bias current at high and low temperatures can be made three times that at low temperature, thereby reducing the difference in gain of the drive amplifier at low and high and low temperatures.
In the structure of the first bias circuit shown in fig. 3, the base and the collector of M7 are connected so that M7 is biased in the saturation region, and the diode connection mode of the first bias circuit is equivalent to a resistor in the circuit, and the resistance value of the first bias circuit decreases with the increase of temperature. The thermistor R7 has a positive temperature coefficient, and its resistance value increases with an increase in temperature. When the temperature rises, on one hand, the resistance value of R7 is increased, and on the other hand, the resistance value of M7 is reduced, so that the voltage V _ inter is reduced, and V _ bias is reduced accordingly. On one hand, the conduction voltage of the triode is reduced along with the rise of the temperature, and on the other hand, the influence of the base width modulation effect, namely Early effect, on the short-channel device is increased, so that the collector current passing through the M8 is also increased along with the rise of the temperature and is finally supplied to the amplifier as a static bias current. The high-low temperature static current ratio realized by the biasing circuit structure compensates the alternating current amplification power ratio of the amplifying tube at high and low temperatures, thereby maintaining good robustness of the driving amplifier.
M9 works in a saturation area, which is equivalent to a large resistor, and the specific value of V _ inter can be adjusted by adjusting the width of an emitting area of M9, so that the specific values of V _ bias and I _ bias are adjusted. If the difference between the high-temperature output current and the low-temperature output current of the bias circuit is too large, on one hand, the current at low temperature is too small, so that the amplifier circuit is unstable, and on the other hand, the current at high and low temperatures is too large to exceed the upper limit value of the safe working current of the triode, so that the reliability is reduced and the like. If the ratio of the high-temperature output current to the low-temperature output current of the bias circuit is smaller, the gain difference caused by the difference of the high-temperature and low-temperature alternating current amplification factors cannot be effectively reduced. The isolation resistor R8 is a large resistor (with a resistance value greater than 8 kohm) for isolating the signal leakage caused by the signal inflow M9 inputted to the amplifier tube from the front stage.
In summary, the driving amplifier with small temperature sensitivity provided by the invention adopts a novel circuit bias structure, and the design of the bias circuit and the amplifier is considered as a whole, so that the temperature sensitivity of the driving amplifier is obviously reduced, and the influence of temperature fluctuation on the performance of the driving amplifier is improved.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
The principle and the implementation manner of the present invention are explained by applying specific examples, the above description of the embodiments is only used to help understanding the method of the present invention and the core idea thereof, the described embodiments are only a part of the embodiments of the present invention, not all embodiments, and all other embodiments obtained by a person of ordinary skill in the art based on the embodiments of the present invention without creative efforts belong to the protection scope of the present invention.

Claims (7)

1. A driver amplifier, comprising: the circuit comprises an output stage network transformer, an output stage circuit, a first inter-stage network transformer, an intermediate stage circuit, a second inter-stage network transformer, an input stage circuit, an input stage network transformer, a first base bias circuit, a second base bias circuit and a third base bias circuit;
the input end of the input stage network transformer is connected with an input signal, the output end of the input stage network transformer is connected with the input end of the input stage circuit, the output end of the input stage circuit is connected with the input end of the second inter-stage network transformer, the output end of the second inter-stage network transformer is connected with the input end of the intermediate stage circuit, the output end of the intermediate stage circuit is connected with the input end of the first inter-stage network transformer, the output end of the first inter-stage network transformer is connected with the input end of the output stage circuit, the output end of the output stage circuit is connected with the input end of the output stage network transformer, and the output end of the output stage network transformer outputs a driving signal;
the output end of the first base electrode bias circuit is connected with a center tap of a secondary coil of the first inter-stage network transformer, and the first base electrode bias circuit is used for providing a first static bias current for the output stage circuit so as to compensate the difference of the amplifying tubes at high and low temperatures of the output stage circuit;
the output end of the second base electrode bias circuit is connected with a center tap of a secondary coil of the second inter-stage network transformer, and the second base electrode bias circuit is used for providing a second static bias current for the intermediate-stage circuit so as to compensate the difference of the amplifying tubes at high and low temperatures of the intermediate-stage circuit;
the output end of the third base bias circuit is connected with a middle tap of a secondary coil of the input stage network transformer, and the third base bias circuit is used for providing a third static bias current for the input stage circuit so as to compensate the high and low temperature amplification tube difference of the input stage circuit;
the middle taps of the primary coils of the output stage network transformer, the first inter-stage network transformer, the second inter-stage network transformer and the input stage network transformer are connected with the positive electrode of a control power supply;
the first base bias circuit comprises: the circuit comprises a first triode, a second triode, a third triode, a thermistor and an isolation resistor;
the collector of the first triode is connected with the positive electrode of a bias power supply through the thermistor, the emitter of the first triode is connected with the collector of the third triode, and the emitter of the third triode is connected with the negative electrode of the bias power supply;
the base electrode of the first triode, the collector electrode of the first triode and the base electrode of the second triode are connected, the collector electrode of the second triode is connected with the positive electrode of the bias power supply, the emitting electrode of the second triode is connected with a middle tap of a secondary coil of the first inter-stage network transformer, and the emitting electrode of the second triode is further connected with the base electrode of the third triode through the isolation resistor.
2. The driver amplifier of claim 1, wherein the thermistor is a positive temperature coefficient thermistor.
3. The driver amplifier of claim 1, wherein the isolation resistor has a resistance greater than 8 kohms.
4. The driver amplifier of claim 1, wherein the first transistor, the second transistor, and the third transistor are NPN transistors.
5. The driver amplifier of claim 1, wherein the output stage circuit comprises: a fourth triode and a fifth triode;
an emitting electrode of the fourth triode is connected with an emitting electrode of the fifth triode and is connected with a negative electrode of the control power supply;
the base electrode of the fourth triode and the base electrode of the fifth triode are respectively connected to two ends of the secondary coil of the first inter-stage network transformer;
and the collector electrode of the fourth triode and the collector electrode of the fifth triode are respectively connected to two ends of the primary coil of the output stage network transformer.
6. The driver amplifier of claim 5, wherein the output stage circuit further comprises: the circuit comprises a first resistor, a first capacitor, a second resistor and a second capacitor;
the first resistor and the first capacitor are connected in series between the base electrode and the collector electrode of the fourth triode;
the second resistor and the second capacitor are connected in series between the base electrode and the collector electrode of the fifth triode.
7. The driver amplifier of claim 5, wherein the fourth transistor and the fifth transistor are both NPN transistors.
CN201910565359.6A 2019-06-27 2019-06-27 Drive amplifier Active CN110350875B (en)

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Citations (3)

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CN103023440A (en) * 2012-12-20 2013-04-03 中国科学院微电子研究所 Circuit for improving linearity of power amplifier
CN103051292A (en) * 2012-12-10 2013-04-17 广州润芯信息技术有限公司 Radio frequency transmitter, gain compensation circuit and method
CN103095230A (en) * 2012-12-31 2013-05-08 东南大学 High-gain and high-power millimeter wave power amplifier

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US7944271B2 (en) * 2009-02-10 2011-05-17 Standard Microsystems Corporation Temperature and supply independent CMOS current source
JP6291796B2 (en) * 2013-11-08 2018-03-14 株式会社ソシオネクスト amplifier

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Publication number Priority date Publication date Assignee Title
CN103051292A (en) * 2012-12-10 2013-04-17 广州润芯信息技术有限公司 Radio frequency transmitter, gain compensation circuit and method
CN103023440A (en) * 2012-12-20 2013-04-03 中国科学院微电子研究所 Circuit for improving linearity of power amplifier
CN103095230A (en) * 2012-12-31 2013-05-08 东南大学 High-gain and high-power millimeter wave power amplifier

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