CN110349863A - A kind of gold gallium weld tabs preparation method and golden gallium weld tabs - Google Patents
A kind of gold gallium weld tabs preparation method and golden gallium weld tabs Download PDFInfo
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- CN110349863A CN110349863A CN201910633737.XA CN201910633737A CN110349863A CN 110349863 A CN110349863 A CN 110349863A CN 201910633737 A CN201910633737 A CN 201910633737A CN 110349863 A CN110349863 A CN 110349863A
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- gallium
- weld tabs
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- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 title claims abstract description 87
- 229910052733 gallium Inorganic materials 0.000 title claims abstract description 87
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 title claims abstract description 54
- 229910052737 gold Inorganic materials 0.000 title claims abstract description 54
- 239000010931 gold Substances 0.000 title claims abstract description 54
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- 238000009617 vacuum fusion Methods 0.000 claims abstract description 33
- 238000010438 heat treatment Methods 0.000 claims abstract description 20
- 239000011261 inert gas Substances 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 16
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 13
- 239000000956 alloy Substances 0.000 claims abstract description 13
- 238000001816 cooling Methods 0.000 claims abstract description 11
- 238000005266 casting Methods 0.000 claims abstract description 9
- 238000003490 calendering Methods 0.000 claims abstract description 6
- 238000004080 punching Methods 0.000 claims abstract description 6
- 229910000679 solder Inorganic materials 0.000 claims abstract description 6
- 238000005303 weighing Methods 0.000 claims abstract description 4
- 238000010792 warming Methods 0.000 claims description 7
- 238000010309 melting process Methods 0.000 claims description 5
- 238000004321 preservation Methods 0.000 claims description 3
- 238000003303 reheating Methods 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 14
- 230000005496 eutectics Effects 0.000 abstract description 9
- 238000005538 encapsulation Methods 0.000 abstract description 7
- 238000003466 welding Methods 0.000 description 14
- 238000002844 melting Methods 0.000 description 9
- 230000008018 melting Effects 0.000 description 9
- 229910000807 Ga alloy Inorganic materials 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 238000003756 stirring Methods 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 238000000137 annealing Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000008595 infiltration Effects 0.000 description 4
- 238000001764 infiltration Methods 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 240000006409 Acacia auriculiformis Species 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 description 3
- OFLYIWITHZJFLS-UHFFFAOYSA-N [Si].[Au] Chemical compound [Si].[Au] OFLYIWITHZJFLS-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000004927 fusion Effects 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 238000010907 mechanical stirring Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000003723 Smelting Methods 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- XCZLSTLZPIRTRY-UHFFFAOYSA-N oxogallium Chemical compound [Ga]=O XCZLSTLZPIRTRY-UHFFFAOYSA-N 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000010008 shearing Methods 0.000 description 2
- 238000001291 vacuum drying Methods 0.000 description 2
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 201000010099 disease Diseases 0.000 description 1
- 208000037265 diseases, disorders, signs and symptoms Diseases 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 238000005098 hot rolling Methods 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 238000005461 lubrication Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/3013—Au as the principal constituent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/40—Making wire or rods for soldering or welding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
- H01L21/4875—Connection or disconnection of other leads to or from bases or plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
- H01L23/4924—Bases or plates or solder therefor characterised by the materials
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Manufacture And Refinement Of Metals (AREA)
Abstract
The invention discloses a kind of golden gallium weld tabs preparation methods, comprising the following steps: the gold and gallium for weighing predetermined ratio are put into vacuum fusion furnace；Vacuumize process is carried out to vacuum fusion furnace；It is filled with inert gas；Vacuum fusion stove heating is melted to set temperature, then carries out cooling down, is heated to set temperature and is melted, and circulation repeatedly, obtains uniform molten state alloy；Molten state alloy casting, calendering, punching press are obtained into solder.A kind of gold gallium weld tabs, is made by above-mentioned golden gallium weld tabs preparation method.A kind of golden gallium weld tabs provided by the invention, eutectic temperature are suitable for the encapsulation of high-power semiconductor well, effectively promote the package quality of high-power semiconductor.
Description
Technical field
The present invention relates to technical field of semiconductor encapsulation, specifically, being related to a kind of golden gallium weld tabs preparation method and golden gallium
Weld tabs.
Background technique
Auri weld tabs is mainly golden tin, gold silicon and gold germanium at present, and eutectic temperature is between 280~360 DEG C.Auri weld tabs is
Through the crucial shaped solder for becoming the chip sealing technique of second generation semiconductor.But answering with the chip of third generation semiconductor
It transports and gives birth to, along with the raising of high temperature semiconductors new diseases and device power, while the presence of multichip system, it is adopted
The fusion temperature of the variation of chip material and structure, existing auri weld tabs is relatively low, is not able to satisfy High-temperature Packaging technique skill
The requirement of art.The eutectic temperature of high-power semiconductor storeroom when packaged needs near 440 DEG C -470 DEG C, and existing
Solder is unable to satisfy the existing market demand, causes packaging effect bad, therefore is badly in need of improving the eutectic temperature of solder, increases material
Encapsulation gradient between material.
Summary of the invention
The purpose of the present invention is to provide a kind of golden gallium weld tabs preparation method and golden gallium weld tabs, and eutectic temperature is high, effectively mentions
The package quality of the semiconductor of increased wattage.
Technical solution used by paper pot disclosed by the invention is:
A kind of gold gallium weld tabs preparation method, comprising the following steps: the gold and gallium for weighing predetermined ratio are put into vacuum fusion furnace
In；Vacuumize process is carried out to vacuum fusion furnace；It is filled with inert gas；Vacuum fusion stove heating is melted to set temperature,
Then cooling down is carried out, set temperature is heated to and is melted, circulation repeatedly, obtains uniform molten state alloy；It will melt
Melt state alloy casting, calendering, punching press obtain solder.
Preferably, in the vacuum fusion stove heating melting process, first with 10~100 DEG C of heating speed per minute
Rate is warming up to 250 DEG C, then in 250 DEG C of one setting times of heat preservation, then again with 10~80 DEG C of the rate of heat addition per minute heating
It is melted to set temperature.
Preferably, the set temperature of the vacuum fusion heating is 300~400 DEG C.
Preferably, when vacuum fusion stove heating is melted to 300~400 DEG C, magnetic force is carried out at high temperature
Stirring or mechanical stirring.
Preferably, it before heating after cooling down and again every time, re-starts and vacuumizes, reach vacuum degree
1.0x10-3~1.0x10-4Pa is re-filled with inert gas, and vacuum degree is made to be maintained at 1Pa~10-3Pa, reheating are melted.
Preferably, the temperature of the cooling down is 250 DEG C or less.
Preferably, for heat calender in calendering, the roller bearing temperature of heat calender is 150~200 DEG C.
A kind of gold gallium weld tabs, is made by above-mentioned golden gallium weld tabs preparation method.
Preferably, the mass fraction of gallium is 25%~35% in the golden gallium weld tabs, the mass fraction of the gold
It is 65%~75%.
Preferably, the mass fraction of gallium is 28%~32% in the golden gallium weld tabs, the mass fraction of the gold
It is 68%~72%.
A kind of beneficial effect of golden gallium weld tabs preparation method disclosed by the invention is: being first put into the gold and gallium of predetermined ratio
In vacuum fusion furnace, vacuumize process is carried out to vacuum fusion furnace, is re-filled with inert gas.Gold and gallium are in heating melting process
In, minimal amount of moisture content can be precipitated, water vapour can be quickly formed under hot conditions, influence gold and metallographic of the gallium in alloying process
Variation, is protected by gold and gallium of the inert gas to melting, while reducing gold and gallium oxygen content in melting process, makes to melt
Reach expected golden gallium alloy after melting, obtains good metallographic, and by the molten state gold gallium alloy after fusion by repeatedly melting
Melt, improves the uniformity of golden gallium bianry alloy.Manufactured gold gallium weld tabs has higher total than existing gold germanium, gold silicon and Jin Xi
Brilliant temperature effectively improves the package quality of high-power semiconductor suitable for the encapsulation of high-power semiconductor.
A kind of beneficial effect of golden gallium weld tabs disclosed by the invention is: the eutectic temperature of golden gallium weld tabs can reach 440-
470 DEG C, it is suitable for the encapsulation of high-power semiconductor well, and there is good infiltration angle, anti-shearing force is high, can be paved with
Pad is sprawled, is infiltrated to the position of required welding, has good welding performance, improves welding effect.
Detailed description of the invention
Fig. 1 is a kind of flow chart of golden gallium weld tabs preparation method of the present invention.
Specific embodiment
The present invention is further elaborated and is illustrated with Figure of description combined with specific embodiments below:
Referring to FIG. 1, a kind of gold gallium weld tabs preparation method, comprising the following steps: the gold and gallium for weighing predetermined ratio are put into
In vacuum fusion furnace, vacuumize process is carried out to vacuum fusion furnace, makes the vacuum degree 1.0x10 of vacuum fusion furnace-2~
1.0x10-4Pa, then it is filled with inert gas into the vacuum fusion furnace for exhausting vacuum, so that vacuum degree is maintained at 1Pa~10-3Pa.Make
For preferred embodiment, after pouring inert gas, vacuumize process is being carried out to vacuum fusion furnace, is being re-filled with inert gas later,
So circulation 2 to 3 times, reduces the ratio of oxygen content and water vapour in smelting process, to prevent from aoxidizing, avoids reducing material
Brittleness.By vacuumizing the air discharge in melting furnace, prevent the presence of air.As preferred embodiment, the quality of gallium
Score is 25%~35%, and the mass fraction of the gold is 65%~75%.More preferably, the quality of gallium is divided in the golden gallium weld tabs
Number is 28%~32%, and the mass fraction of the gold is 68%~72%.
Vacuum fusion furnace is first warming up to 250 DEG C with 10~100 DEG C of the rate of heat addition per minute, then keeps the temperature one at 250 DEG C
Setting time, setting time are 30~40min, keep gold and gallium heated more uniformly, and release centainly in insulating process
Stress, be then warming up to 300~400 DEG C again with 30~80 DEG C of the rate of heat addition per minute and melted, melt 20~30min
After carry out cooling down, so that the temperature in vacuum fusion furnace is reduced to 250 DEG C or less, it is desirable to be down to room temperature, cooling 30~
60min。
After cooling, vacuum fusion furnace is vacuumized again, the vacuum degree of vacuum fusion furnace is made to reach 1.0x10 again-3
~1.0x10-4Pa, then inert gas is filled with into the vacuum fusion furnace for exhausting vacuum, inert gas be helium, neon, argon gas,
One of Krypton and xenon are a variety of, and vacuum degree is made to be maintained at 1~10-3Pa.Again to vacuum fusion furnace with per minute 10~100
DEG C the rate of heat addition be warming up to 250 DEG C, then in 250 DEG C of 30~40min of heat preservation, then again with 10~80 DEG C of heating per minute
Rate is warming up to 300~400 DEG C and is melted, and recycles repeatedly according to above step, is repeatedly melted to gold and gallium, improves gold
The uniformity of gallium bianry alloy.
Inert gas is added in vacuum fusion furnace, the stable chemical performance of inert gas will not generate chemistry with gold, gallium
Reaction, during heating, keeps certain amount of inert gas, after can effectively reducing heating, is precipitated during metal molten
Minimal amount of water, hot conditions, which are lauched, can quickly form water vapour, and as the temperature rises, and the vacuum degree in furnace reduces,
And inert gas can make the vacuum degree in vacuum drying oven maintain 1Pa~10-3Pa reduces oxygen content and water vapour in smelting process
Ratio avoid the brittleness for reducing material to prevent from aoxidizing.To reduce the oxygen content of golden gallium bianry alloy, golden gallium is improved
The metallographic quality of bianry alloy.Preferably, oxygen content and vapour content in vacuum drying oven can be made to be maintained at 10ppm or less.
As preferred embodiment, vacuum fusion stove heating to 300~400 DEG C melted when, under high temperature environment into
Row stirs golden gallium bianry alloy repeatedly, further increases the uniformity of golden gallium bianry alloy.Stirring can choose magnetic force
Stirring or mechanical stirring, mechanical stirring structure is simple, easy to operate, and magnetic agitation can be while agitating to stirring thing inside
It is further heated, internal temperature is made to be maintained at melting temperature, further promote the uniformity of stirring.
Melted molten state gold gallium alloy is cast in mold and forms ingot casting, mold can select graphite jig, stone
Black mold will not be chemically reacted with gold, gallium, and high temperature strength is high, have good thermal stability and anti-thermal shock
Property.Graphite jig can be good at the molten state gold gallium alloy of high temperature.Graphite jig has good lubrication and wear resistence simultaneously,
Keep golden gallium alloy depanning more smoothly, and the ingot casting surface that surface comes out is smooth.
Homogenization heat treatment is carried out at a temperature of ingot casting is carried out 250 DEG C again, heat treatment time is 20~60min, and ingot casting is again
Hot rolling is carried out under conditions of the roller bearing temperature of heat calender is 150~200 DEG C, pass deformation is controlled less than 15%, intermediate
Annealing time is greater than 6min, rolls out the golden gallium welding come with a thickness of 0.05~0.1mm.
Manufactured gold gallium welding passes through annealing again, and annealing temperature is 260~280 DEG C, and anneal 1~1.5h.Eliminate gold
The residual stress of gallium welding, Reducing distortion, and hardness is reduced, improve machining property.
Golden gallium welding after annealing is put on punching machine, the punch forming gold gallium weld tabs on punching machine.
In above scheme, first by predetermined ratio set ratio gold and gallium be put into vacuum fusion furnace, to vacuum fusion furnace into
Row vacuumize process makes the vacuum degree of vacuum fusion furnace reach 1.0x10-2~1.0x10-4Pa is re-filled with inert gas, makes true
Reciprocal of duty cycle is maintained at 1Pa~10-3Pa。
During metal liquefaction, minimal amount of moisture content, meeting under hot conditions can be precipitated during heating melting in gold and gallium
Quickly form water vapour, influence the metallographic variation of gold and gallium in alloying process, by inert gas to the gold of melting and gallium into
Row protection, while gold and gallium oxygen content in melting process are reduced, reach expected golden gallium alloy after making melting, obtains good
Metallographic, and the uniformity of golden gallium bianry alloy is improved by repeatedly melting by the molten state gold gallium alloy after fusion.
Obtained molten state gold gallium alloy is cast in mold and forms ingot casting, ingot casting is put into heat calender and carries out heat
Calendering obtains welding again by punching machine punch forming after welding is cooling and golden gallium weld tabs is made.Manufactured gold gallium weld tabs is than existing
Gold germanium, gold silicon and Jin Xi there is higher eutectic temperature, suitable for the encapsulation of high power semiconductor, effectively improve high power half
The package quality of conductor.
In the technical program, a kind of golden gallium weld tabs is also provided, is made by above-mentioned preparation method, the matter of gallium in golden gallium weld tabs
Measure score be 25~35%, and when the mass fraction of gallium in golden gallium weld tabs be 28~32% when have better eutectic temperature and
Infiltrate angle.When the mass fraction of gallium in golden gallium weld tabs is 25~35%, infiltration angle is greater than 90 degree, can effectively avoid the production of rosin joint
It is raw.In the welding process, golden gallium weld tabs is substantially at liquid condition, and component pin or printed circuit board are then solid-like
State, since golden gallium weld tabs has suitable infiltration angle, can be paved with pad or paving when liquid gold gallium weld tabs and solid base material are contacted
Exhibition is infiltrated to the position of required welding, is had good welding performance, is improved welding effect.
In above scheme, when the mass fraction of gallium is 25~35% in golden gallium weld tabs, the eutectic temperature of golden gallium weld tabs can
Reach 440-470 DEG C, is suitable for the encapsulation of high-power semiconductor well, and there is good infiltration angle, anti-shearing force
The welding performance of height, golden gallium weld tabs is good, effectively promotes the package quality of high-power semiconductor.
Finally it should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention, rather than the present invention is protected
The limitation of range is protected, although explaining in detail referring to preferred embodiment to the present invention, those skilled in the art are answered
Work as understanding, it can be with modification or equivalent replacement of the technical solution of the present invention are made, without departing from the reality of technical solution of the present invention
Matter and range.
Claims (10)
1. a kind of gold gallium weld tabs preparation method, which comprises the following steps:
The gold and gallium for weighing predetermined ratio are put into vacuum fusion furnace；
Vacuumize process is carried out to vacuum fusion furnace；
It is filled with inert gas；
Vacuum fusion stove heating is melted to set temperature, then carries out cooling down, is heated to set temperature and is melted
Melt, circulation repeatedly, obtains uniform molten state alloy；
Molten state alloy casting, calendering, punching press are obtained into solder.
2. gold gallium weld tabs preparation method as described in claim 1, which is characterized in that the vacuum fusion stove heating melting process
In, 250 DEG C first are warming up to 10~100 DEG C of the rate of heat addition per minute, then in 250 DEG C of one setting times of heat preservation, then again
Set temperature is warming up to 10~80 DEG C of the rate of heat addition per minute to be melted.
3. gold gallium weld tabs preparation method as described in claim 1, which is characterized in that the set temperature of the vacuum fusion heating
It is 300~400 DEG C.
4. gold gallium weld tabs preparation method as claimed in claim 4, which is characterized in that in vacuum fusion stove heating to 300~400
When DEG C being melted, stirred repeatedly.
5. gold gallium weld tabs preparation method as described in claim 1, which is characterized in that heat after cooling down and again every time
Before, it re-starts and vacuumizes, vacuum degree is made to reach 1.0x10-3~1.0x10-4Pa is re-filled with inert gas, keeps vacuum degree
In 1Pa~10-3Pa, reheating are melted.
6. gold gallium weld tabs preparation method as described in claim 1, which is characterized in that the temperature of the cooling down is 250 DEG C
Below.
7. gold gallium weld tabs preparation method as described in claim 1, which is characterized in that heat calender is in calendering, heat calender
Roller bearing temperature be 150~200 DEG C.
8. a kind of gold gallium weld tabs, which is characterized in that pass through the described in any item golden gallium weld tabs preparation method systems of claim 1-8
?.
9. gold gallium weld tabs as claimed in claim 9, which is characterized in that in the gold gallium weld tabs mass fraction of gallium be 25%~
35%, the mass fraction of the gold is 65%~75%.
10. gold gallium weld tabs as claimed in claim 9, which is characterized in that the mass fraction of gallium is 28% in the gold gallium weld tabs
~32%, the mass fraction of the gold is 68%~72%.
Applications Claiming Priority (2)
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|---|---|---|---|
| CN2019105809759 | 2019-06-29 | ||
| CN201910580975 | 2019-06-29 |
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| CN110349863A true CN110349863A (en) | 2019-10-18 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115041862A (en) * | 2022-06-22 | 2022-09-13 | 浙江亚通焊材有限公司 | Gold-tin alloy foil strip and preparation method thereof |
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|---|---|---|---|---|
| US5120498A (en) * | 1991-05-15 | 1992-06-09 | C-Innovations, Inc. | Solders having exceptional adhesion to glass |
| CN105345312A (en) * | 2015-12-02 | 2016-02-24 | 华北水利水电大学 | Brazing filler metal for dental department and preparation method of brazing filler material |
| CN109079363A (en) * | 2018-09-26 | 2018-12-25 | 北京航空航天大学 | A kind of sealing-in solder of low-vapor pressure low melting point |
| CN109794703A (en) * | 2019-01-25 | 2019-05-24 | 汕尾市索思电子封装材料有限公司 | Au-Ga solder |
-
2019
- 2019-07-15 CN CN201910633737.XA patent/CN110349863A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5120498A (en) * | 1991-05-15 | 1992-06-09 | C-Innovations, Inc. | Solders having exceptional adhesion to glass |
| CN105345312A (en) * | 2015-12-02 | 2016-02-24 | 华北水利水电大学 | Brazing filler metal for dental department and preparation method of brazing filler material |
| CN109079363A (en) * | 2018-09-26 | 2018-12-25 | 北京航空航天大学 | A kind of sealing-in solder of low-vapor pressure low melting point |
| CN109794703A (en) * | 2019-01-25 | 2019-05-24 | 汕尾市索思电子封装材料有限公司 | Au-Ga solder |
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