CN110342938A - A kind of preparation method of high throughput porous silicon carbide seperation film - Google Patents

A kind of preparation method of high throughput porous silicon carbide seperation film Download PDF

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CN110342938A
CN110342938A CN201910668952.3A CN201910668952A CN110342938A CN 110342938 A CN110342938 A CN 110342938A CN 201910668952 A CN201910668952 A CN 201910668952A CN 110342938 A CN110342938 A CN 110342938A
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silicon carbide
preparation
porous silicon
seperation film
separating layer
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CN110342938B (en
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仲兆祥
邢卫红
乔浩
张峰
韩峰
魏巍
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Jiangsu Jiulang High-Tech Co Ltd
Nanjing Tech University
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Jiangsu Jiulang High-Tech Co Ltd
Nanjing Tech University
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Abstract

The present invention relates to a kind of preparation methods of high-throughput porous silicon carbide seperation film.Using the silicon carbide supporter of macropore as substrate, preparation has the silicon carbide film of unsymmetric structure, transition zone can be sacrificed using the conduct of diethylenetriamine pentaacetic acid aluminum fiber, the separating layer particle of the supporter and small particle that make large aperture is mutually matched, and overcomes separating layer particle endosmosis;The separating layer that silicon carbide film is prepared by the method for spraying during high-temperature calcination separating layer, while removing median fiber transition zone, simplifies the structure of silicon carbide film, prepares high-throughput porous silicon carbide seperation film.The silicon carbide seperation film prepared by this method while having both the supporter of macropore and the separating layer of aperture; and without intermediate layer; gas permeability is preferable; filtering accuracy is higher; preparation process is easy to operate, is easy to large-scale production, can be used for industrial dust purifying device; in industries such as coal chemical industry, steam power plant and metallurgical works, it is with a wide range of applications.

Description

A kind of preparation method of high throughput porous silicon carbide seperation film
Technical field
The invention belongs to high-temperature dust removal Material Fields, and in particular to a kind of preparation of silicon carbide seperation film.
Background technique
In recent years, with the development of industrial technology, industrial activity is more and more frequently, and air pollution phenomenon is also more and more brighter Aobvious, national multiple areas frequently occur large area haze phenomenon.Fine particulates discharge is exceeded, it is considered to be causes haze existing The immediate cause of elephant, but in the exhaust gas of industry discharge, not only contain a large amount of dust, the temperature of gas is also higher, and companion With there is a poisonous and harmful chemical component such as nitrogen oxides, oxysulfide, handle it is relatively difficult, requirement for equipment and materials compared with It is high.Silicon carbide has high mechanical strength, good heat resistance and corrosion resistance.It is prepared using carbofrax material for gas-solid Isolated silicon carbide film, gas permeability and filtering accuracy with higher, separation operation process is simple, operating cost compared with It is low.
103721578 A of patent CN discloses a kind of pure matter silicon carbide separation membrane preparation method of multichannel unsymmetric structure. The pure matter silicon carbide film of unsymmetric structure, is tubulose multi-channel structure, and channel number significantly increases elementary membrane between 7-3000 Area and membrane tube intensity.Aperture is successively reduced using multiple transition zones using the method sprayed layer by layer in technique, can be prepared The silicon carbide seperation film of different pore size.But when preparing the filter membrane of small-bore, since transition layer number is more, not only work Skill preparation process is complex, and the silicon carbide film permeability prepared is also smaller.The silicon carbide film aperture finally prepared is 1 μ M, porosity 50%, filtration of demineralized water flux are 6500 L/m3·h·bar.106083060 A of patent CN discloses a kind of list Channel unsymmetric structure silicon carbide separates membrane preparation method, and it is 10 μm that partial size is coated on the supporter that aperture is 15 μm Silicon-carbide particle, in order to prepare the complete silicon carbide film in surface, separating layer thickness increases to 1 mm, the carbonization finally prepared Silicon fiml pore-size distribution is 2.8 μm, and gas permeability is 120 m3/m2·h·kPa。
Summary of the invention
The object of the present invention is to provide a kind of preparation methods of high-throughput porous silicon carbide seperation film.
In order to reach goal of the invention, the technical solution of the present invention is as follows:
A kind of preparation method of high throughput porous silicon carbide seperation film, specific preparation process is as follows:
(1) diethylenetriamine pentaacetic acid aluminum fiber is mixed with methocel solution, prepares fiber transition zone after mixing evenly Solution;
(2) silicon-carbide particle and sintering aid are mixed with methocel solution, prepares coating liquid after mixing evenly;
(3) it by the fiber transition zone solution in step (1), brushes in porous silicon carbide supporting body surface;
(4) coating liquid in step (2) is formed with spray gun spraying porous silicon carbide supporting body surface obtained by step (3) again Silicon carbide seperation film;
(5) it by silicon carbide supporter obtained by step (4), is placed in atmosphere furnace and carries out high-temperature calcination.
Wherein:
Methocel solution mass concentration described in step (1) is 0.5-3 wt%, and diethylenetriamine pentaacetic acid aluminum fiber is in methyl Mass concentration in fiber solution is 0.5-4 wt%.
Methocel solution mass concentration described in step (2) is 0.5-3 wt%, and silicon-carbide particle partial size is 5-15 μ M, sintering aid are calcium oxide, zirconium oxide and mullite, and sintering aid partial size is 0.5-3 μm;Each object in methocel solution The mass fraction of matter are as follows: silicon-carbide particle is 10-30 wt%, and calcium oxide is 0.1-0.5 wt%, and zirconium oxide is 0.1-0.5 wt%, Mullite is 0.1-0.5 wt%.
Step (3) the silicon carbide support body aperture is 20-35 μm, and it is 1-5 times that step (3), which brushes number, is brushed every time 30 min are dried afterwards.
The distance between gun slot and silicon carbide supporter are 10-30 cm in step (4) spraying process, and spray pressure is 0.1-0.3 MPa, spray time are 4-8 s, are sprayed 1-4 times, every time dry 10-30 min after spraying.
Step (5) described calcination procedure are as follows: at 0-1200 DEG C, calcined in air atmosphere, heating rate 1-10 DEG C/min, 2-4 h is kept the temperature at 1200-1500 °C;Argon atmosphere is then turned to, continues to keep the temperature 2-6 h, last Temperature fall.
Beneficial effects of the present invention:
(1) the invention operating procedure is simple, and porous silicon carbide separates film properties and stablizes, and repeatability is high, and parameter is easily controllable, can be with Amplify experiment, large-scale production.
(2) using diethylenetriamine pentaacetic acid aluminum fiber as transition zone, during the preparation process, can make macropore supporter and Small particle separating layer particle is mutually matched, and effectively prevent being seeped into supporter in separating layer particle;During calcining separating layer, Fiber transition zone can be efficiently removed, and only retained supporter and separating layer, simplified the structure of silicon carbide film, and having can sacrifice The feature of transition zone.
(3) present invention, which uses macropore supporter and can sacrifice transition zone, prepares silicon carbide film, greatly improves carbonization The gas permeability of silicon fiml, and the separating layer of small-bore ensure that and guarantee silicon carbide membrane separation efficiency.
Detailed description of the invention
Fig. 1 is the microcosmic scanning electron microscope (SEM) photograph of silicon carbide film in embodiment 1, transition zone section before a is calcined;Silicon carbide before b is calcined Film section;Silicon carbide film surface after c calcining;Silicon carbide film section after d calcining.
Fig. 2 is silicon carbide film graph of pore diameter distribution in embodiment 2.
Fig. 3 is silicon carbide film profile scanning electron microscope in embodiment 2.
Fig. 4 is silicon carbide film profile scanning electron microscope in embodiment 3.
Fig. 5 is silicon carbide film surface scan electron microscope in embodiment 4.
Fig. 6 is silicon carbide film surface scan electron microscope in embodiment 5.
Specific embodiment
The present invention is done below with reference to embodiment and is further explained, the following example is merely to illustrate the present invention, but It is not used to limit practical range of the invention.
Embodiment 1
(1) diethylenetriamine pentaacetic acid aluminum fiber is mixed with the methylcellulose of 0.5 wt%, after mixing evenly, obtains transition zone Fiber solution mass concentration is 4 wt%.
It (2) is 10 wt% silicon carbide, 0.1 wt% calcium oxide, 0.1 wt% zirconium oxide and 0.1 wt% mullite point by content Be dispersed in the methocel solution of 0.5 wt%, wherein the average grain diameter of silicon carbide powder be 5 μm, calcium oxide, zirconium oxide and The average grain diameter of mullite is 0.5 μm, obtains coating liquid after mixing evenly.
(3) the fiber transition zone solution in step (1) is brushed to the silicon carbide supporting body surface for being 20 μm to aperture, brush It applies 5 times, 30 min is then dried.
(4) coating liquid obtained in step (1) is sprayed into the supporting body surface in step (3), spray gun in spraying process It mouthful is 10 cm at a distance from silicon supporter between carbonization, spray pressure is 0.1 MPa, and spray time is 8 s, sprays 4 times, often Dry 30 min after secondary spraying.
(5) porous silicon carbide obtained in step (5) is separated and carries out high-temperature calcination, at 0-1200 DEG C, in air It is calcined in atmosphere, heating rate is 1 DEG C/min, keeps the temperature 2 h at 1200 DEG C;Argon atmosphere is then turned to, continues to keep the temperature 4 h, Last Temperature fall.
Experimental result: using Porosimetry PSDA-20 type, carries out aperture and flux point to porous silicon carbide seperation film Analysis, air flux are 135 m3/m2HkPa, average pore size be 2.43 μm, Fig. 1 scanning electron microscope (SEM) photograph show separating layer with a thickness of 100 μm, be 0.3 μm of aluminum oxide dust rejection 99.9% to partial size, but connect between separating layer and supporter poor.
Embodiment 2
(1) diethylenetriamine pentaacetic acid aluminum fiber is mixed with the methylcellulose of 0.5 wt%, after mixing evenly, obtains diethyl three Triamine pentaacetic acid aluminum fiber concentration of polymer solution is 0.5 wt%.
It (2) is 25 wt% silicon carbide, 0.2 wt% calcium oxide, 0.2 wt% zirconium oxide and 0.2 wt% mullite point by content It is dispersed in the methocel solution of 2 wt%, wherein the average grain diameter of silicon carbide powder is 10 μm, calcium oxide, zirconium oxide and not The average grain diameter for carrying out stone is 1 μm, obtains coating liquid after mixing evenly.
(3) the fiber transition zone solution in step (1) is brushed to the silicon carbide supporting body surface for being 30 μm to aperture, brush It applies 1 time, 30 min is then dried.
(4) coating liquid obtained in step (1) is sprayed into the supporting body surface in step (3), spray gun in spraying process It mouthful is 10 cm with the distance between silicon carbide supporter, spray pressure is 0.3 MPa, and spray time is 8 s, it sprays 4 times, often Dry 30 min after secondary spraying.
(5) porous silicon carbide seperation film obtained in step (5) is subjected to high-temperature calcination, at 0-1200 DEG C, in air It is calcined in atmosphere, heating rate is 1 DEG C/min, keeps the temperature 2 h at 1300 DEG C;Argon atmosphere is then turned to, heat preservation 2 is continued H, last Temperature fall.
Experimental result: Fig. 2 uses Porosimetry PSDA-20 type, carries out aperture and flux to porous silicon carbide seperation film Analysis, air flux are 236 m3/m2HkPa, average pore size are 3.48 μm, and Fig. 3 scanning electron microscopic picture shows separating layer thickness 120 μm, be 0.3 μm of aluminum oxide dust rejection 99.9% to partial size, forms good neck between separating layer and supporter and connects It connects.
Embodiment 3
(1) diethylenetriamine pentaacetic acid aluminum fiber is mixed with the methylcellulose of 2 wt%, after mixing evenly, obtains Diethylenetriamine Pentaacetic acid aluminum fiber concentration of polymer solution is 2 wt%.
It (2) is 25 wt% silicon carbide, 0.3 wt% calcium oxide, 0.3 wt% zirconium oxide and 0.3 wt% mullite point by content It is dispersed in the methocel solution of 2 wt%, wherein the average grain diameter of silicon carbide powder is 10 μm, calcium oxide, zirconium oxide and not The average grain diameter for carrying out stone is 0.5 μm, obtains coating liquid after mixing evenly.
(3) the fiber transition zone solution in step (1) is brushed to the silicon carbide supporting body surface for being 30 μm to aperture, brush It applies 3 times, dry 30 min after brushing every time.
(4) coating liquid obtained in step (1) is sprayed into the supporting body surface in step (3), spray gun in spraying process It mouthful is 20 cm with the distance between silicon carbide supporter, spray pressure is 0.3 MPa, and spray time is 8 s, sprays 3 times, often Dry 30 min after secondary spraying.
(5) porous silicon carbide obtained in step (5) is separated and carries out high-temperature calcination, at 0-1200 DEG C, in air gas It is calcined in atmosphere, heating rate is 5 DEG C/min, keeps the temperature 4 h at 1300 DEG C;Argon atmosphere is then turned to, continues to keep the temperature 6 h, Last Temperature fall.
Experimental result: using Porosimetry PSDA-20 type, carries out aperture and flux point to porous silicon carbide seperation film Analysis, air flux are 245 m3/m2HkPa, average pore size be 3.65 μm, 120 μm of thickness of Fig. 4 scanning electron microscope (SEM) photograph separating layer, It is 0.3 μm of aluminum oxide dust rejection 99.9% to partial size, forms good neck connection between separating layer and supporter.
Embodiment 4
(1) diethylenetriamine pentaacetic acid aluminum fiber is mixed with the methylcellulose of 2 wt%, after mixing evenly, obtains Diethylenetriamine Pentaacetic acid aluminum fiber concentration of polymer solution is 2 wt%.
It (2) is 30 wt% silicon carbide, 0.3 wt% calcium oxide, 0.3 wt% zirconium oxide and 0.3 wt% mullite point by content It is dispersed in the methocel solution of 2 wt%, wherein the average grain diameter of silicon carbide powder is 10 μm, calcium oxide, zirconium oxide and not The average grain diameter for carrying out stone is 1 μm, obtains coating liquid after mixing evenly.
(3) the fiber transition zone solution in step (1) is brushed to the silicon carbide supporting body surface for being 30 μm to aperture, brush It applies 5 times, dry 30 min after brushing every time.
(4) coating liquid obtained in step (1) is sprayed into the supporting body surface in step (3), spray gun in spraying process It mouthful is 20 cm with the distance between silicon carbide supporter, spray pressure is 0.3 MPa, and spray time is 8 s, sprays 3 times, often Dry 30 min after secondary spraying.
(5) porous silicon carbide obtained in step (5) is separated and carries out high-temperature calcination, at 0-1200 DEG C, in air gas It is calcined in atmosphere, heating rate is 1 DEG C/min, keeps the temperature 2 h at 1400 DEG C;Argon atmosphere is then turned to, continues to keep the temperature 4 h, Last Temperature fall.
Experimental result: using Porosimetry PSDA-20 type, carries out aperture and flux point to porous silicon carbide seperation film Analysis, air flux are 571 m3/m2HkPa, average pore size are 6.58 μm, and it is a small amount of that Fig. 5 scanning electron microscope (SEM) photograph shows that separating layer occurs Excess agglomeration phenomenon, 120 μm of separating layer thickness, be 0.3 μm of aluminum oxide dust rejection 73.6%, separating layer and branch to partial size Good neck connection is formed between support body.
Embodiment 5
(1) diethylenetriamine pentaacetic acid aluminum fiber is mixed with the methylcellulose of 3 wt%, after mixing evenly, obtains Diethylenetriamine Pentaacetic acid aluminum fiber concentration of polymer solution is 1 wt%.
It (2) is 30 wt% silicon carbide, 0.5 wt% calcium oxide, 0.5 wt% zirconium oxide and 0.5 wt% mullite point by content It is dispersed in the methocel solution of 3 wt%, wherein the average grain diameter of silicon carbide powder is 15 μm, calcium oxide, zirconium oxide and not The average grain diameter for carrying out stone is 3 μm, obtains coating liquid after mixing evenly.
(3) the fiber transition zone solution in step (1) is brushed to the silicon carbide supporting body surface for being 35 μm to aperture, brush It applies 3 times, dry 30 min after brushing every time.
(4) coating liquid obtained in step (1) is sprayed into the supporting body surface in step (3), spray gun in spraying process It mouthful is 30 cm with the distance between silicon carbide supporter, spray pressure is 0.3 MPa, and spray time is 4 s, sprays 1 time, so After 30 min are dried.
(5) porous silicon carbide obtained in step (5) is separated and carries out high-temperature calcination, at 0-1200 DEG C, in air It is calcined in atmosphere, heating rate is 10 DEG C/min, keeps the temperature 2 h at 1500 DEG C;Argon atmosphere is then turned to, heat preservation 4 is continued H, last Temperature fall.
Experimental result: using Porosimetry PSDA-20 type, carries out aperture and flux point to porous silicon carbide seperation film Analysis, air flux are 1167 m3/m2HkPa, average pore size are 32.4 μm;Fig. 6 scanning electron microscope (SEM) photograph shows that separating layer occurred Degree sintering, it is 34.2% that 120 μm of separating layer thickness, which are 0.3 μm of dust rejection to partial size, shape between separating layer and supporter It is connected at good neck.

Claims (7)

1. a kind of preparation method of high throughput porous silicon carbide seperation film, which is characterized in that specific preparation process is as follows:
(1) diethylenetriamine pentaacetic acid aluminum fiber is mixed with methocel solution, diethylenetriamine pentaacetic acid aluminum fiber is in methyl Mass concentration in fiber solution is 0.5-4 wt%, prepares fiber transition zone solution after mixing evenly;
(2) silicon-carbide particle and sintering aid are mixed with methocel solution, prepares coating liquid after mixing evenly;
(3) it by the fiber transition zone solution in step (1), brushes in porous silicon carbide supporting body surface;
(4) again by the coating liquid in step (2), with spray gun spraying porous silicon carbide supporting body surface obtained by step (3);
(5) it by silicon carbide supporter obtained by step (4), is placed in atmosphere furnace and carries out high-temperature calcination.
2. a kind of preparation method of high-throughput porous silicon carbide seperation film according to claim 1, which is characterized in that step (1) the methocel solution mass concentration described in is 0.5-3 wt%.
3. a kind of preparation method of high-throughput porous silicon carbide seperation film according to claim 1, which is characterized in that step (2) the methocel solution mass concentration in coating liquid is 0.5-3 wt%, and silicon-carbide particle partial size is 5-15 μm, and sintering helps Agent is calcium oxide, zirconium oxide and mullite, and sintering aid partial size is 0.5-3 μm.
4. a kind of preparation method of high-throughput porous silicon carbide seperation film according to claim 3, which is characterized in that step (2) mass fraction of each substance in methocel solution are as follows: silicon-carbide particle is 10-30 wt%, and calcium oxide is 0.1-0.5 wt%, zirconium oxide are 0.1-0.5 wt%, and mullite is 0.1-0.5 wt%.
5. a kind of preparation method of high-throughput porous silicon carbide seperation film according to claim 1, which is characterized in that step (3) the silicon carbide support body aperture is 20-35 μm, and it is 1-5 times that step (3), which brushes number, dry 30 after brushing every time min。
6. a kind of preparation method of high-throughput porous silicon carbide seperation film according to claim 1, which is characterized in that step (4) the distance between gun slot and silicon carbide supporter are 10-30 cm in spraying process, and spray pressure is 0.1-0.3 MPa, Spray time is 4-8 s, is sprayed 1-4 times, every time dry 10-30 min after spraying.
7. a kind of preparation method of high-throughput porous silicon carbide seperation film according to claim 1, which is characterized in that step (5) calcination procedure are as follows: at 0-1200 DEG C, to be calcined in air atmosphere, heating rate is 1-10 DEG C/min, 2-4 h is kept the temperature at 1200-1500 DEG C;Argon atmosphere is then turned to, continues to keep the temperature 2-6 h, last Temperature fall.
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