CN110336184A - A kind of SOA-PIN integrated light detector of low noise - Google Patents

A kind of SOA-PIN integrated light detector of low noise Download PDF

Info

Publication number
CN110336184A
CN110336184A CN201910638464.8A CN201910638464A CN110336184A CN 110336184 A CN110336184 A CN 110336184A CN 201910638464 A CN201910638464 A CN 201910638464A CN 110336184 A CN110336184 A CN 110336184A
Authority
CN
China
Prior art keywords
soa
layer
pin
integrated light
light detector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201910638464.8A
Other languages
Chinese (zh)
Other versions
CN110336184B (en
Inventor
李洵
董智星
王衡
赵佳
杜刘革
王作佳
黄卫平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Manguang Information Technology Co ltd
Original Assignee
Shandong University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shandong University filed Critical Shandong University
Priority to CN201910638464.8A priority Critical patent/CN110336184B/en
Publication of CN110336184A publication Critical patent/CN110336184A/en
Application granted granted Critical
Publication of CN110336184B publication Critical patent/CN110336184B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/60—Receivers
    • H04B10/66—Non-coherent receivers, e.g. using direct detection
    • H04B10/69—Electrical arrangements in the receiver
    • H04B10/697—Arrangements for reducing noise and distortion

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Light Receiving Elements (AREA)

Abstract

The invention discloses a kind of SOA-PIN integrated light detectors of low noise, it successively include: the part SOA along signal optical propagation direction, the part PIN and total reflection mirror, the part SOA and PIN section bottom share same bottom electrode, top is the SOA top electrodes and PIN top electrodes being independently arranged, total reflection mirror is located at the outside of the part PIN, the part SOA includes grating space filtering structure sheaf, its direction is the direction of propagation along signal light, the SOA-PIN integrated light detector of low noise disclosed in this invention is small in size, cost is relatively low, it is suitble to large-scale production, noise is filtered out with good, improve the effect of signal-to-noise ratio.

Description

A kind of SOA-PIN integrated light detector of low noise
Technical field
The present invention relates to photoelectric device technical field, in particular to the SOA-PIN integrated light detector of a kind of low noise.
Background technique
With the demand that internet increases sharply for flow and bandwidth, the requirement in optical communication system for receiver is increasingly It is high.Traditional photoreceiver generally use PIN photodiode or avalanche photodide (Avalanche Photodiode, APD it) is used as photodetector, but they have been difficult to meet the needs of current receiver is for photodetector.On the one hand, PIN has good bandwidth characteristic, but since it is without inherent gain, individually can not be using PIN as photodetector Receiver provides enough sensitivity.On the other hand, APD can provide inherent gain, but be by electrical domain in gain in it Avalanche multiplication effect generates, therefore its gain bandwidth accumulates in certain upper limit, in 25Gb/s, 40Gb/s or higher rate In optical communication system, APD is not often available because of Bandwidth-Constrained.
A kind of preferable solution is to utilize semiconductor optical amplifier (Semiconductor OpticalAmplifier, SOA) preamplifier as PIN photoelectric detector, optical signal is amplified in advance, then benefit Photoelectric conversion is completed with PIN.However, program bring prominent question is as follows: first is that the introducing of SOA will bring additional put Big device spontaneous radiation (Amplifier Spontaneous Emission) noise, this will substantially reduce and detect signal in PIN Signal-to-noise ratio, and then influence receiver sensory characteristic；Second is that SOA is incited somebody to action as additional discrete device so that first in receiver Device is more, and structure becomes increasingly complex, and the problem larger there may be coupling loss between SOA and PIN.
In order to reduce the influence of noise, filter would generally be added in photoreceiver to filter out a part of out-of-band noise.Often The filter seen is bandpass filter, but either bandpass filter or low pass, high pass, bandstop filter etc., they are It is acted on based on spectral filtering, i.e., only signal is screened in wavelength level, leave the signal of the wave band of needs, filter out and be not required to The signal for the wave band wanted, to play the role of inhibiting wide range noise.Spectral filtering mode has certain limitation, it is in phase Signal and noise can not be distinguished on co-wavelength, the effect (filtered signal-to-noise ratio) of filtering depends entirely on filter Passband width and pass-band performance, passband width is narrower and pass-band performance is better, and the noise filtered out is more, even if passband is sufficient Enough narrow, the noise in band not can avoid still, and narrow passband may cause the distortion of signal.
Summary of the invention
In order to solve the above technical problems, the present invention provides a kind of SOA-PIN integrated light detectors of low noise, to reach The purpose for filtering out noise, improving signal-to-noise ratio.
In order to achieve the above objectives, technical scheme is as follows:
A kind of SOA-PIN integrated light detector of low noise successively includes: the part SOA, PIN along signal optical propagation direction Part and total reflection mirror, the part SOA and PIN section bottom share same bottom electrode, and top is the top SOA being independently arranged Portion's electrode and PIN top electrodes, total reflection mirror are located at the outside of the part PIN, and the part SOA includes grating space filtering knot Structure layer, direction are the direction of propagation along signal light.
In above scheme, the part the SOA successively include: from bottom to top back contact layer and bottom electrode, substrate layer one, Buffer layer, plate coupling waveguide layer, the first difference limiting layer, gain active layer, the second difference limiting layer, wall, grating are empty Between filter structure layer, etch stop layer, top covering, contact layer one and SOA top electrodes.
In above scheme, the gain active layer includes the single quantum well wrapped up by two barrier layer.
In above scheme, the grating space filtering structure sheaf includes p-type grating waveguide layer and p-type grating coating.
In above scheme, the part the PIN successively include: from bottom to top back contact layer and bottom electrode, substrate layer two, N-type layer, Intrinsic Gettering layer, P-type layer, contact layer two and PIN top electrodes.
In above scheme, the N-type difference limiting layer of the thickness of the Intrinsic Gettering layer of the part PIN and the part SOA, Gain active layer, the thickness of p-type difference limiting layer are identical, and the center of the two is aligned in vertical direction.The design of this spline structure Purpose is in gain active area (the maximum region of light field in i.e. lateral optical field distribution) and the part PIN in the part SOA made It absorbs intrinsic layer (i.e. the highest region of absorption efficiency) to be located in same level, the advantage is that can guarantee from the part SOA The light of output is farthest partially absorbed by PIN.
In above scheme, 2-3 μm is spaced between the SOA top electrodes and PIN top electrodes.
In above scheme, the grating space filtering structure sheaf is quarter-wave phase-shifted grating.
In above scheme, which is successively to shape behind the part SOA and the part PIN progress epitaxial growth twice At monolithic integrated device.
In above scheme, the reflectivity of the total reflection mirror is 100%.
The principle core of the SOA-PIN integrated light detector space filtering of low noise provided by the invention is to utilize signal The spatial distribution of light and noise in optical grating construction is different, and signal light field is made to converge at the portion PIN in the spatial distribution of device inside Point, and noise light field is uniformly distributed in device inside, so that the signal-to-noise ratio for the signal that PIN part detection arrives is higher than input letter Number signal-to-noise ratio, play the role of filtering out noise, improve signal-to-noise ratio, improve sensitivity.
The grating space filtering structure sheaf is quarter-wave phase-shifted grating, special compared to common single order grating For sign to be inserted into one section of quarter-wave phase shift layer at raster center, length L is represented by L=(N+1/4) λB/neff, Middle N is any positive integer, λBFor bragg wavelength, neffFor equivalent refractive index.The grating of the quarter-wave phase-shifted grating Periods lambda meets Bragg's equation Λ=λ/(2neff).Above-mentioned grating space filtering structure can make wavelength meet λ=λB's Coherent signal light field has peak Distribution in center phase-shifted region, and with the raising of normalization grating reflection coefficient, exhausted big portion The coherent states field divided all will focus on the close region of center phase-shifted region.And for deviateing central wavelength or without coherence's Signal, light field space distribution will hardly be influenced by grating space filtering structure.
The total reflection film that reflectivity is 100% is plated in the end of the part PIN.The design of such structure is for examining as follows Consider: as described above, the single order Bragg-grating structure with quarter-wave phase shift can make coherent signal light field in Heart phase-shifted region has peak Distribution, but if directlying adopt the grating knot that common a quarter phase-shifted region is located at device center Structure, since in phase-shifted region part, design has the PIN optical detector that can absorb light field to the device, if only from side entering light, Then the optical field distribution of phase-shifted region two sides does not have symmetry, is just unable to reach and is converged using a quarter phase-shifted grating to light field Poly- effect.Since usual device is all made of the mode of unilateral entering light, for guarantee device in optical field distribution symmetry, need by The symmetrical structure of aforementioned a quarter phase-shifted grating injects signal light from unilateral side, after device end reflection along center doubling It is exported from the same side.Consider for as above, plate total reflection film in the end of the part PIN, make device actually become one it is right Fold up, phase-shifted region is located at 1/8th phase-shifted gratings of end.
Due to the presence of total reflection film, phase shift item that the part the PIN need to meet along the length L ' of signal optical propagation direction Part becomes L '=(N+1/4) λB/(2neff).The phase-shift condition can make coherent signal light of the wavelength equal to bragg wavelength Field farthest converges at the part PIN, and noise (wavelength is uniformly distributed in entire frequency spectrum and does not have coherence) light field Uniform spatial distribution is presented substantially in device.Therefore the phase-shift condition will make device have best noise characteristic, That is, PIN part detection to signal can obtain maximum signal-to-noise ratio.
The part SOA also includes N-type plate coupled waveguide (SCW, slab coupledwaveguide) layer, the N Type plate coupling waveguide layer will be enlarged by the mould spot of guiding light while reduce light field restriction factor, to guarantee the coupling effect of input light field Rate.
In the part SOA, the material of the substrate layer one is N-type InP, and doping concentration is about 3 × 1018cm-3；The buffering The material of layer is N-type InP, and thickness range is 450nm to 550nm, and doping concentration is about 1 × 1018cm-3；The plate coupled wave The material of conducting shell is the N-type InGaAsP of high refractive index, and band gap wavelength 1130nm, thickness range is 450nm to 550nm, is mixed Miscellaneous concentration is 1 × 1018cm-3；It is described first difference limiting layer material be N-type InGaAsP, band gap wavelength from 980nm to 1250nm gradual change, thickness range are 225nm to 275nm, and doping concentration is about 0.5 × 1018cm-3；The gain active layer is by two The well layer composition of a barrier layer package, the material of well layer is AlGaInAs, and operation wavelength 1550nm, thickness is about 5nm, Using 1.3% compressive strain, the material of each barrier layer is that AlGaInAs, band gap wavelength 1250nm use with a thickness of 10nm 0.4% tensile strain；The material of the second difference limiting layer is p-type InGaAsP, and band gap wavelength is 1250nm to 980nm Gradual change, thickness range are 90nm to 110nm, and doping concentration is about 0.2 × 1018cm-3；The material of the wall is p-type InP, With a thickness of 30nm, doping concentration is about 0.3 × 1018cm-3；The grating space filtering structure sheaf is by grating waveguide layer and grating Coating composition, the material of grating waveguide layer are p-type InGaAsP, band gap wavelength 1260nm, thickness range for 50nm extremely 60nm, doping concentration are about 0.5 × 1018cm-3, the material of grating coating is p-type InP, and with a thickness of 50nm, doping concentration is about It is 0.7 × 1018cm-3；The material of the etch stop layer be p-type InGaAsP, band gap wavelength 1100nm, with a thickness of 10nm, doping concentration are about 0.7 × 1018cm-3；The material of the top covering is p-type InP, with a thickness of 1700nm, using gradual change Doping way, doping concentration range are 0.7 × 1018cm-3To 2 × 1018cm-3；The contact layer is by one layer of band gap wavelength 1300nm, it is greater than 3 × 10 with a thickness of 50nm, doping concentration18cm-3P-type InGaAsP material and a layer thickness be 150nm, mix Miscellaneous concentration is greater than 3 × 1019cm-3P-type InGaAs material composition.
In the part PIN, the material of the substrate layer is N-type InP, and doping concentration is about 3 × 1018cm-3；The N-type layer Material is N-type InP, and thickness range is 450nm to 550nm, and doping concentration is about 5 × 1017cm-3；The material of the absorbed layer is The InGaAs to undope, with a thickness of 580nm；The material of the P-type layer is p-type InP, and thickness range is 1530nm to 1870nm, Doping concentration is about 5 × 1017cm-3；The contact layer is 1300nm, big with a thickness of 50nm, doping concentration by one layer of band gap wavelength In 3 × 1018cm-3P-type InGaAsP material and a layer thickness be 150nm, doping concentration be greater than 3 × 1019cm-3P-type InGaAs material composition.
Through the invention it is contemplated above technical scheme is compared with the prior art, have the advantages that
(1) the invention proposes the concept of space filtering, core concept is using signal light and noise in grating sky Between spatial distribution differences in filter structure, noise is filtered out.The concept of space filtering in addition to using wavelength to signal and Noise distinguishes outer, is also distinguished using coherence and incoherence to signal and noise, therefore compared to spectral filtering, Space filtering can screen signal and noise from more essential feature, reach better filter effect, obtain higher Signal-to-noise ratio.Specifically, include grating space filtering structure in device design proposed by the present invention, be one on the structural nature A a quarter phase-shifted grating, according to Such analysis, the distribution of signal light and noise in the grating space filtering structure is different, Signal light field can dramatically be converged in a quarter phase-shifted region (i.e. the part PIN), and noise light field device inside almost Presentation is uniformly distributed, and the intensity in both parts PIN can generate biggish difference in this way, filters out noise, raising noise to reach The effect of ratio.
(2) SOA-PIN integrated light detector proposed by the present invention is shown by simulating, verifying, made compared to SOA and PIN For the cascade structure of discrete device, for same input signal light, PIN part detection to signal can obtain 20dB extremely The signal-to-noise ratio of 40dB is promoted；Further, the grating space of no gain will be input to by the signal light of spectral filtering In filter structure, PIN part detection to signal compare input signal still and have the signal-to-noise ratio of about 18dB and promoted, it was demonstrated that reasonable Structure designs down space filter action precisely because spectral filtering acts on.
(3) SOA-PIN integrated light detector proposed by the present invention, can be completed at the same time optical communication system in individual devices Required gain in receiver, the function of detecting and filter out noise, wherein gain is to realize that detection is logical by the part SOA Cross PIN part realize, filter out noise be by grating space filtering structure realize, while the device have small in size, cost compared with The advantages of low, suitable large-scale production.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below There is attached drawing needed in technical description to be briefly described.
Fig. 1 is a kind of SOA-PIN integrated light detector stereoscopic schematic diagram of low noise disclosed in the embodiment of the present invention；
Fig. 2 is the left view of the SOA-PIN integrated light detector of low noise disclosed in the embodiment of the present invention；
Fig. 3 is the right view of the SOA-PIN integrated light detector of low noise disclosed in the embodiment of the present invention；
Fig. 4 is the top view of the SOA-PIN integrated light detector of low noise disclosed in the embodiment of the present invention；
Fig. 5 is the detector internal signal optical field distribution figure of the embodiment of the present invention；
The spatial distribution map of noise field inside the detector of the embodiment of the present invention of the position Fig. 6；
Fig. 7 is the signal spectrum that PIN is partially received.
In figure, 1, back contact layer and bottom electrode；2, substrate layer one；3, buffer layer；4, plate coupling waveguide layer；5, One difference limiting layer；6, single quantum well gain active layer；7, the second difference limiting layer；8, wall；9, grating space filtering knot Structure layer；10, etch stop layer；11, top covering；12, contact layer one；13, SOA top electrodes；14, substrate layer two；15, N-type layer； 16, Intrinsic Gettering layer；17, P-type layer；18, contact layer two；19, PIN top electrodes；20, total reflection mirror；M, the part SOA；N,PIN Part.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete Site preparation description.
The present invention provides a kind of SOA-PIN integrated light detectors of low noise, as shown in Figure 1, specific embodiment is as follows: Optical detector shown in the present embodiment works in 1550nm wave band, and horizontal direction includes the part the SOA part M, PIN N and is all-trans Penetrate mirror 20.
As shown in Fig. 2, the part SOA includes: back contact layer and bottom electrode 1, substrate layer 1, buffer layer from bottom to top 3, plate coupling waveguide layer (SCW layers) 4, first distinguishes limiting layer 5, single quantum well gain active layer 6, second distinguishes limiting layer 7, Wall 8, grating space filtering structure sheaf 9, etch stop layer 10, top covering 11, contact layer 1 and SOA top electrodes 13.
In the present embodiment, the material of substrate layer 1 is N-type InP, 350 μm of thickness, doping concentration about 3 × 1018cm-3。
The material of buffer layer 3 is N-type InP, thickness 500nm, doping concentration about 1 × 1018cm-3, refractive index 3.17.
The material of plate coupling waveguide layer (SCW layers) 4 is N-type InGaAsP, and band gap wavelength 1130nm, thickness 500nm mix Miscellaneous concentration about 1 × 1018cm-3, refractive index 3.3.
First difference limiting layer 5 material be N-type InGaAsP, band gap wavelength gradual change from 980nm to 1250nm, with a thickness of 250nm, doping concentration about 0.5 × 1018cm-3, refractive index 3.2.
Single quantum well gain active layer 6 is made of the well layer that two barrier layer are wrapped up, and the material of well layer is AlGaInAs, Operation wavelength 1550nm, thickness 5nm, using 1.3% compressive strain, refractive index about 3.5, the material of two barrier layer is AlGaInAs, band gap wavelength 1250nm, thickness 10nm, using 0.4% tensile strain, refractive index 3.3.
The material of second difference limiting layer 7 is p-type InGaAsP, band gap wavelength gradual change from 1250nm to 980nm, thickness 100nm, doping concentration about 0.2 × 1018cm-3, refractive index 3.2.
The material of wall 8 is p-type InP, thickness 30nm, doping concentration about 0.3 × 1018cm-3。
Grating space filtering structure sheaf 9 is made of grating waveguide layer and grating coating, and the material of grating waveguide layer is p-type InGaAsP, band gap wavelength 1260nm, thickness 50nm, doping concentration about 0.5 × 1018cm-3, the material of grating coating is p-type InP, thickness 50nm, doping concentration about 0.7 × 1018cm-3.The period of grating is 235nm in grating space filtering structure, corresponding Bragg wavelength be 1550nm, the grating coefficient of coup be 7000m-1。
The material of etch stop layer 10 is p-type InGaAsP, band gap wavelength 1100nm, thickness 10nm, doping concentration about 0.7 ×1018cm-3。
The material of top covering 11 is p-type InP, thickness 1700nm, using gradient doping mode, doping concentration range 0.7 × 1018cm-3To 2 × 1018cm-3。
Contact layer 1 is greater than 3 × 10 by one layer of band gap wavelength 1300nm, thickness 50nm, doping concentration18cm-3P-type InGaAsP material and a layer thickness are 150nm, doping concentration about 3 × 1019cm-3P-type InGaAs material composition.Contact layer 12 It is directly connect with SOA top electrodes, the material of SOA top electrodes is conductive metal.
SOA atop part is etched into ridge waveguide structure, so that the equivalent refractive index of horizontal direction is low-high-low distribution, together When due to the index distribution that limiting layer 7 is distinguished from buffer layer 3 to the second be it is low-high-low-high-low, lead to the mould spot for guiding light The central area of gain active layer is concentrated on, and the mould spot for expanding guiding light by SCW layers reduces light field restriction factor simultaneously, To guarantee the coupling efficiency of input light field.
SOA straightened portion direction overall thickness other than substrate is 3415nm, and the length along signal optical propagation direction is 399.5 μm, it include 1700 complete screen periods.
As shown in figure 3, the part PIN includes: back contact layer and bottom electrode 1, substrate layer 2 14, N-type layer from bottom to top 15, Intrinsic Gettering layer 16, P-type layer 17, contact layer 2 18 and PIN top electrodes 19.
The material of substrate layer 2 14 is N-type InP, and with a thickness of 350.4 μm, doping concentration is about 3 × 1018cm-3。
The material of N-type layer 15 is N-type InP, and with a thickness of 500nm, doping concentration is about 1 × 1018cm-3。
The material of Intrinsic Gettering layer 16 is the InGaAs to undope, with a thickness of 580nm.
The material of P-type layer 17 is p-type InP, with a thickness of 1735nm.
Contact layer 2 18 by a layer thickness be 50nm, doping concentration be greater than 3 × 1018cm-3P-type InGaAsP material and one Layer is about 3 × 10 with a thickness of 150nm, doping concentration19cm-3P-type InGaAs material composition.Contact layer 18 is directly and at the top of PIN Electrode connection, the material of PIN top electrodes are conductive metal.
PIN straightened portion direction overall thickness in addition to substrate is 3015nm, and the length along signal optical propagation direction is 20.034 μ M is equivalent to the length of 170.5 grating half periods.
Specifically, the making step of SOA-PIN integrated photodetector chip epitaxial wafer is the first life on substrate layer 2 14 Each layer structure of the long part PIN, then performs etching the side of epitaxial wafer, etching with a thickness of SOA part in addition to substrate Overall thickness 3415nm, then etch come region on docking growth the part SOA each layer structure.This process needs to guarantee The bottom of the part SOA plate coupling waveguide layer (SCW layers) 4 and the bottom of the part PIN first buffer layer 15 are generally within same water In plane.
In the bottom grown back contact layer of substrate layer one and substrate layer two, and bottom electrode 1 is made, back contact layer Material is InGaAs, and thickness 150nm, doping concentration is about 3 × 1019cm-3, back contact layer directly contacts with bottom electrode, bottom The material of portion's electrode is conductive metal.
As shown in figure 4, making SOA top electrodes, the contact layer two in the part PIN above the contact layer one of the part SOA Top makes PIN top electrodes, and two electrode zones avoid adhesion, are separated by 3 μm.
Total reflection mirror 20 is plated on the outside of lightray propagation direction in the part PIN to after epitaxial wafer progress cleavage.
Effect in order to better illustrate the present invention is given below and verifies example about the numerical simulation of above-described embodiment, The simulated conditions of the simulating, verifying example are as shown in table 1:
The simulated conditions of 1 simulating, verifying example of table
The simulation result obtained under above-mentioned simulated conditions, other characterisitic parameter packets calculated according to simulation result It includes, the space distribution situation of detector internal signal light field and noise field is shown in Fig. 5 and Fig. 6；The signal spectrum that PIN is partially received See Fig. 7.The signal-to-noise ratio that PIN partially absorbs area is about 45dB, and the gain of device entirety is about 42dB, and bandwidth is about 25Gbps, spirit Sensitivity is about -36dBm.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, as defined herein General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one The widest scope of cause.

Claims (10)

1. a kind of SOA-PIN integrated light detector of low noise, which is characterized in that along signal optical propagation direction successively include: SOA Partially, the part PIN and total reflection mirror, the part SOA and PIN section bottom share same bottom electrode, and top is independently to set The SOA top electrodes and PIN top electrodes set, total reflection mirror are located at the outside of the part PIN, and the part SOA includes grating Space filtering structure sheaf, direction are the direction of propagation along signal light.
2. a kind of SOA-PIN integrated light detector of low noise according to claim 1, which is characterized in that the portion SOA Divide successively includes: back contact layer and bottom electrode, substrate layer one, buffer layer, plate coupling waveguide layer, first point from bottom to top Other limiting layer, gain active layer, the second difference limiting layer, wall, grating space filtering structure sheaf, etch stop layer, upper packet Layer, contact layer one and SOA top electrodes.
3. a kind of SOA-PIN integrated light detector of low noise according to claim 2, which is characterized in that the gain Active layer includes the single quantum well wrapped up by two barrier layer.
4. a kind of SOA-PIN integrated light detector of low noise according to claim 2, which is characterized in that the grating Space filtering structure sheaf includes p-type grating waveguide layer and p-type grating coating.
5. a kind of SOA-PIN integrated light detector of low noise according to claim 2, which is characterized in that the portion PIN Divide successively includes: back contact layer and bottom electrode, substrate layer two, N-type layer, Intrinsic Gettering layer, P-type layer, contact from bottom to top Layer two and PIN top electrodes.
6. a kind of SOA-PIN integrated light detector of low noise according to claim 5, which is characterized in that the portion PIN The thickness and the N-type difference limiting layer of the part SOA, gain active layer, p-type of the Intrinsic Gettering layer divided distinguish the thickness of limiting layer Spend identical, the center of the two is aligned in vertical direction.
7. a kind of SOA-PIN integrated light detector of low noise according to claim 1, which is characterized in that the top SOA 2-3 μm is spaced between portion's electrode and PIN top electrodes.
8. a kind of SOA-PIN integrated light detector of low noise according to claim 1, which is characterized in that the grating Space filtering structure sheaf is quarter-wave phase-shifted grating.
9. a kind of SOA-PIN integrated light detector of low noise according to claim 1, which is characterized in that the Integrated Light Detector is successively to carry out the monolithic integrated device formed after epitaxial growth twice to the part SOA and the part PIN.
10. a kind of SOA-PIN integrated light detector of low noise according to claim 1, which is characterized in that described to be all-trans The reflectivity for penetrating mirror is 100%.
CN201910638464.8A 2019-07-16 2019-07-16 SOA-PIN integrated optical detector with low noise Active CN110336184B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910638464.8A CN110336184B (en) 2019-07-16 2019-07-16 SOA-PIN integrated optical detector with low noise

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910638464.8A CN110336184B (en) 2019-07-16 2019-07-16 SOA-PIN integrated optical detector with low noise

Publications (2)

Publication Number Publication Date
CN110336184A true CN110336184A (en) 2019-10-15
CN110336184B CN110336184B (en) 2021-03-12

Family

ID=68145354

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910638464.8A Active CN110336184B (en) 2019-07-16 2019-07-16 SOA-PIN integrated optical detector with low noise

Country Status (1)

Country Link
CN (1) CN110336184B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113050217A (en) * 2021-03-25 2021-06-29 山东大学 Method for filtering in-band white noise by using spatial coherence
CN115706175A (en) * 2021-08-09 2023-02-17 北京一径科技有限公司 Photoelectric detection array, photoelectric detector and laser radar

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5029297A (en) * 1989-10-13 1991-07-02 At&T Bell Laboratories Optical amplifier-photodetector device
US5299057A (en) * 1992-10-29 1994-03-29 Gte Laboratories Incorporated Monolithically integrated optical amplifier and photodetector tap
US5574289A (en) * 1992-02-28 1996-11-12 Hitachi, Ltd. Semiconductor optical integrated device and light receiver using said device
US6909536B1 (en) * 2001-03-09 2005-06-21 Finisar Corporation Optical receiver including a linear semiconductor optical amplifier
US20070110357A1 (en) * 2005-11-15 2007-05-17 Forrest Stephen R Integrated photonic amplifier and detector
CN102713703A (en) * 2009-12-10 2012-10-03 奥尼奇普菲托尼克斯有限公司 Waveguide optically pre-amplified detector with passband wavelength filtering
CN103346475A (en) * 2013-05-31 2013-10-09 中国科学院半导体研究所 Monolithic integration coupled cavity narrow linewidth semiconductor laser
CN206742259U (en) * 2017-05-31 2017-12-12 华中科技大学 A kind of VCSOA PIN integrated light detectors

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5029297A (en) * 1989-10-13 1991-07-02 At&T Bell Laboratories Optical amplifier-photodetector device
US5574289A (en) * 1992-02-28 1996-11-12 Hitachi, Ltd. Semiconductor optical integrated device and light receiver using said device
US5299057A (en) * 1992-10-29 1994-03-29 Gte Laboratories Incorporated Monolithically integrated optical amplifier and photodetector tap
US6909536B1 (en) * 2001-03-09 2005-06-21 Finisar Corporation Optical receiver including a linear semiconductor optical amplifier
US20070110357A1 (en) * 2005-11-15 2007-05-17 Forrest Stephen R Integrated photonic amplifier and detector
CN102713703A (en) * 2009-12-10 2012-10-03 奥尼奇普菲托尼克斯有限公司 Waveguide optically pre-amplified detector with passband wavelength filtering
CN103346475A (en) * 2013-05-31 2013-10-09 中国科学院半导体研究所 Monolithic integration coupled cavity narrow linewidth semiconductor laser
CN206742259U (en) * 2017-05-31 2017-12-12 华中科技大学 A kind of VCSOA PIN integrated light detectors

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113050217A (en) * 2021-03-25 2021-06-29 山东大学 Method for filtering in-band white noise by using spatial coherence
CN115706175A (en) * 2021-08-09 2023-02-17 北京一径科技有限公司 Photoelectric detection array, photoelectric detector and laser radar
CN115706175B (en) * 2021-08-09 2024-02-27 北京一径科技有限公司 Photoelectric detection array, photoelectric detector and laser radar

Also Published As

Publication number Publication date
CN110336184B (en) 2021-03-12

Similar Documents

Publication Publication Date Title
JP2684605B2 (en) Integrated optical device for bidirectional optical communication or signal transmission
JP3221916B2 (en) Optoelectronic device with integrated optical guide and photodetector
CN103733448B (en) Semiconductor laser
US5333216A (en) Optical device used wavelength selective photocoupler
US20160307939A1 (en) Microstructure enhanced absorption photosensitive devices
JPH09153638A (en) Waveguide semiconductor light receiving device and manufacture of the same
CN106684104B (en) A kind of single-chip integration balanced detector and preparation method thereof
JPH05507175A (en) Optical/electrical equipment
EP2677356B1 (en) Integrated optoelectronic module
TWI464864B (en) High-effiieny bandwidth product germanium photodetector
CN110336184A (en) A kind of SOA-PIN integrated light detector of low noise
CN104950382B (en) AWG output waveguides and the seamed integrated device docked of detector and preparation method
CN112913158B (en) Photoelectric detector chip, light receiving and transmitting-receiving assembly, optical module and communication equipment
CN210006746U (en) Waveguide type germanium-based photoelectric detector
JPH09283786A (en) Waveguide-type semiconductor light-receiving element and its manufacture method
US6835990B2 (en) Semiconductor light receiving element
CN113161433B (en) 100GHz traveling wave vertical direction coupling optical waveguide detector
CN108701968B (en) Optical amplifier
JP2014530388A (en) Resonator with reduced loss
JP2003174186A (en) Semiconductor light receiving element
KR100265858B1 (en) Wavelength division multiplexing device with monolithically integrated semiconductor laser and photodiode
JP2641289B2 (en) Optical amplifier with built-in optical wavelength filter
JP2001127335A (en) Multi-section opto-electronic component
JP2700262B2 (en) Light detection method
CN117334761A (en) Reflection-type germanium-silicon avalanche photodetector

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
CB03 Change of inventor or designer information

Inventor after: Li Xuan

Inventor after: Dong Zhixing

Inventor after: Zhou Yulan

Inventor after: Wang Heng

Inventor after: Zhao Jia

Inventor after: Du Liuge

Inventor after: Wang Zuojia

Inventor after: Huang Weiping

Inventor before: Li Xuan

Inventor before: Dong Zhixing

Inventor before: Wang Heng

Inventor before: Zhao Jia

Inventor before: Du Liuge

Inventor before: Wang Zuojia

Inventor before: Huang Weiping

CB03 Change of inventor or designer information
GR01 Patent grant
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20220117

Address after: 201210 Floor 9, block C, No. 1867, Zhongke Road, Pudong New Area, Shanghai

Patentee after: Shanghai Manguang Information Technology Co.,Ltd.

Address before: Shandong university Qingdao Campus, 72 Binhai Road, aoshanwei street, Jimo District, Qingdao City, Shandong Province 266200

Patentee before: SHANDONG University

TR01 Transfer of patent right