CN110335952A - Improve the composite algorithm of perovskite light emitting diode with quantum dots carrier transport efficiency - Google Patents
Improve the composite algorithm of perovskite light emitting diode with quantum dots carrier transport efficiency Download PDFInfo
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- CN110335952A CN110335952A CN201910542660.5A CN201910542660A CN110335952A CN 110335952 A CN110335952 A CN 110335952A CN 201910542660 A CN201910542660 A CN 201910542660A CN 110335952 A CN110335952 A CN 110335952A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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- H—ELECTRICITY
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Abstract
The present invention is to disclose a kind of composite algorithm for improving perovskite light emitting diode with quantum dots carrier transport efficiency.The present invention is using electrically conducting transparent ito glass as anode, hole transmission layer is prepared by spin coating and is doped with the quantum dot of transport layer as luminescent layer, then thermal evaporation deposition electron injecting layer, electron transfer layer and metal negative electrode are utilized, and then is assembled into light emitting diode with quantum dots.The present invention provides a kind of composite algorithm for improving perovskite light emitting diode with quantum dots carrier transport efficiency, light emitting diode construction is novel.Light emitting diode prepared by the present invention uses inorganic perovskite quantum dot, more stable compared to traditional hybrid inorganic-organic perovskite material.
Description
Technical field
The present invention relates to a kind of composite algorithms for improving perovskite light emitting diode with quantum dots carrier transport efficiency, belong to electricity
Photoluminescence field.
Background technique
In recent years, metal halide perovskite quantum dot is because its luminous efficiency is high, excitation purity is high, band gap is adjustable, carrier
The excellent performance such as mobility height is widely studied in luminescence display field, but prepared light emitting diode with quantum dots is current
Efficiency is lower than Organic Light Emitting Diode, it is still necessary to advanced optimize, the efficiency of transmission for improving carrier is optimised devices efficiency
One important means.Common light emitting diode generates apparent boundary in deposition process, passes through between luminescent layer and transport layer
Quantum dot is compound with organic material, boundary bring potential barrier can be effectively reduced, improve carrier transport efficiency, enhance current-carrying
Quantum balancing improves device efficiency.
Summary of the invention
Improve answering for perovskite light emitting diode with quantum dots carrier transport efficiency the purpose of the present invention is to provide a kind of
It is legal.
The present invention can be achieved through the following technical solutions, and improve two pole of perovskite quantum dot light emitting of carrier transport efficiency
Pipe, is prepared by following steps:
Step 1, perovskite quantum dot is prepared using room temperature synthetic method, perovskite quantum dot is dispersed in and has dissolved organic material
In the toluene solution of material, the compound of quantum dot and organic material is realized；
Step 2, the spin coating hole injection layer solution on clean ito glass, carries out hot place under 100-200 degrees Celsius
Reason, obtains hole injection layer；
Step 3, in the surface spin coating hole transmission layer solution of hole injection layer, hot place is carried out under 100-150 degrees Celsius
Reason, obtains hole transmission layer；
Step 4, it in the surface spin coating quantum dot dispersion liquid of hole transmission layer, is heat-treated under 50-100 degrees Celsius,
Obtain luminescent layer；
Step 5, in the surface vacuum thermal evaporation deposition electron transfer layer of luminescent layer；
Step 6, in electron transfer layer surface vacuum thermal evaporation deposition electrode material, inorganic perovskite quantum dot light emitting is obtained
Diode.
In step 1, the perovskite quantum dot compositions are CsPbBr3, the transmission layer material be PTAA or
TmPyPB or PBD, the toluene solution of dissolution transmission layer material be PTAA is dissolved in toluene, or by PTAA and
TmPyPB mixed dissolution is in toluene, or by PTAA and PBD mixed dissolution in toluene.
In step 2, the hole injection layer material be PEDOT:PSS, concentration be 1.3~1.7wt%, spin coating with a thickness of
30~60nm.
In step 3, the hole transport layer material is PTAA, and concentration is 1.3~1.7wt%, spin coating with a thickness of 30~
60nm。
In step 4, the quantum dot dispersion liquid through overdoping and quantum dot dispersion phase obtained in step 1 are same.
In step 5, the electron transport layer materials are TPBi, deposition thickness 30-60nm.
In step 6, the electrode material is LiF/Al, deposition thickness 1-2nm/60-120nm.
The present invention compares as follows with remarkable advantage compared with the existing technology: (1) the present invention provides a kind of improvement calcium titaniums
The composite algorithm of mine light emitting diode with quantum dots carrier transport efficiency, light emitting diode construction are novel；(2) hair prepared by the present invention
Optical diode uses inorganic perovskite quantum dot, more stable compared to traditional hybrid inorganic-organic perovskite material.
Detailed description of the invention
Fig. 1 is luminous diode device structure schematic diagram prepared by the embodiment of the present invention 4.
Fig. 2 is electroluminescent map of the light emitting diode of the preparation of the embodiment of the present invention 4 under 5V voltage.
Fig. 3 is the current density of the light emitting diode of 1-4 of embodiment of the present invention preparation and the relational graph of external quantum efficiency.
Specific embodiment
Below by way of specific embodiment, the invention will be further described.
The present invention is spin-on deposition hole injection layer and hole transmission layer on ito glass, is then spin coated onto doping transport layer
The perovskite quantum dot of material is as luminescent layer, by thermal evaporation deposition electron transfer layer, reheating hydatogenesis hole injection layer,
Last thermal evaporation deposition electrode material, obtains perovskite light emitting diode with quantum dots.
Embodiment 1
Mixed transport layer and luminescent layer described in the present embodiment are to improve the inorganic perovskite quantum dot of carrier transport efficiency
Light emitting diode specifically comprises the following steps:
Step 1, CsPbBr is prepared using room temperature synthetic method3Perovskite quantum dot is dispersed in pure first by perovskite quantum dot
In benzene；
Step 2, the spin coating PEDOT:PSS on cleaned ito glass, concentration 5mg/ml, revolving speed 3000r/min；
Step 3, spin coating PTAA solution, concentration 5mg/ml, revolving speed 3000r/min；
Step 4, appropriate CsPbBr is taken3The dispersion liquid of quantum dot carries out spin coating, revolving speed 2000r/min；
Step 5, TPBi, deposition thickness 40nm are deposited by thermal evaporation；
Step 6, LiF/Al, deposition thickness 1.2nm/100nm are deposited by thermal evaporation, mixing and doping transport layer is made
Improve the inorganic perovskite light emitting diode with quantum dots of carrier transport efficiency, electroluminescent map such as Fig. 2 with luminescent layer
Shown, the relational graph of current density and external quantum efficiency is shown in Fig. 3.
Embodiment 2
Similar to Example 1, difference is for the pure toluene in the step 1 of embodiment 1 to be changed to the PTAA toluene of 4mg/ml
Solution, other conditions are consistent, and mixing and doping transport layer and luminescent layer is made to improve the inorganic calcium of carrier transport efficiency
Titanium ore light emitting diode with quantum dots.
Embodiment 3
It is similar to Example 1, difference be for the pure toluene in the step 1 of embodiment 1 to be changed to the PTAA of 4mg/ml with
The toluene solution of the PBD mixing of 1mg/ml, other conditions are consistent, and mixing and doping transport layer and luminescent layer is made and is carried with improving
Flow the inorganic perovskite light emitting diode with quantum dots of sub- efficiency of transmission.
Embodiment 4
It is similar to Example 1, difference be for the pure toluene in the step 1 of embodiment 1 to be changed to the PTAA of 4mg/ml with
The toluene solution of the TmPyPB mixing of 1mg/ml, other conditions are consistent, and mixing and doping transport layer and luminescent layer is made to change
The inorganic perovskite light emitting diode with quantum dots of kind carrier transport efficiency.
Embodiment 5
It is similar to Example 1, difference be for the pure toluene in the step 1 of embodiment 1 to be changed to the PTAA of 4mg/ml with
The toluene solution of the TmPyPB mixing of 2mg/ml, other conditions are consistent, and mixing and doping transport layer and luminescent layer is made to change
The inorganic perovskite light emitting diode with quantum dots of kind carrier transport efficiency.
Embodiment 6
It is similar to Example 1, difference be for the pure toluene in the step 1 of embodiment 1 to be changed to the PTAA of 4mg/ml with
The toluene solution of the PBD mixing of 2mg/ml, other conditions are consistent, and mixing and doping transport layer and luminescent layer is made and is carried with improving
Flow the inorganic perovskite light emitting diode with quantum dots of sub- efficiency of transmission.
Claims (7)
1. improving the composite algorithm of perovskite light emitting diode with quantum dots carrier transport efficiency, which is characterized in that this method are as follows: packet
Include following steps:
Step 1, perovskite quantum dot is prepared using room temperature synthetic method, perovskite quantum dot is dispersed in and has dissolved organic material
In toluene solution, the compound of quantum dot and organic material is realized；
Step 2, the spin coating hole injection layer solution on clean ito glass, is heat-treated under 100-200 degrees Celsius, is obtained
To hole injection layer；
Step 3, it in the surface spin coating hole transmission layer solution of hole injection layer, is heat-treated, is obtained under 100-150 degrees Celsius
To hole transmission layer；
Step 4, it in the surface spin coating quantum dot dispersion liquid of hole transmission layer, is heat-treated, is obtained under 50-100 degrees Celsius
Luminescent layer；
Step 5, in the surface vacuum thermal evaporation deposition electron transfer layer of luminescent layer；
Step 6, in electron transfer layer surface vacuum thermal evaporation deposition electrode material, inorganic two pole of perovskite quantum dot light emitting is obtained
Pipe.
2. the method according to claim 1, wherein in step 1, the perovskite quantum dot compositions are
CsPbBr3, the organic material is poly- [bis- (4- phenyl) (2,4,6- trimethylphenyl) amine] or 1,3,5- tri- [(3- pyridines
Base) -3- phenyl] benzene or 2- (4- xenyl) -5- phenyl oxadiazoles, the toluene solution for having dissolved organic material be by
PTAA is dissolved in toluene, or by PTAA and TmPyPB mixed dissolution in toluene, or by PTAA and PBD mixed dissolution in toluene
In.
3. the method according to claim 1, wherein the hole injection layer material is poly- ethylene in step 2
Dioxy thiophene-is poly- (styrene sulfonate), and concentration is 1.3~1.7wt%, and spin coating is with a thickness of 30~60nm.
4. the hole transport layer material is PTAA the method according to claim 1, wherein in step 3,
Concentration is 1.3~1.7wt%, and spin coating is with a thickness of 30~60nm.
5. the method according to claim 1, wherein in step 4, the quantum dot dispersion liquid through overdoping
With step, obtained quantum dot dispersion phase is same in 1.
6. the method according to claim 1, wherein the electron transport layer materials are 1,3,5- in step 5
Three (1- phenyl -1H- benzimidazolyl-2 radicals-yl) benzene, deposition thickness 30-60nm.
7. the method according to claim 1, wherein the electrode material is LiF/Al, deposition in step 6
With a thickness of 1-2nm/60-120nm.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111009613A (en) * | 2019-11-29 | 2020-04-14 | 武汉大学苏州研究院 | Perovskite quantum dot doped organic ultraviolet detector and preparation method thereof |
Citations (2)
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| KR20160127458A (en) * | 2015-04-27 | 2016-11-04 | 포항공과대학교 산학협력단 | organic/inorganic hybrid perovskite light-emitting layers using nanocrystal pinning process and manufacturing method thereof |
| CN109004091A (en) * | 2018-06-11 | 2018-12-14 | 南京理工大学 | A kind of light emitting diode with quantum dots and preparation method thereof based on room temperature perovskite material |
-
2019
- 2019-06-21 CN CN201910542660.5A patent/CN110335952A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20160127458A (en) * | 2015-04-27 | 2016-11-04 | 포항공과대학교 산학협력단 | organic/inorganic hybrid perovskite light-emitting layers using nanocrystal pinning process and manufacturing method thereof |
| CN109004091A (en) * | 2018-06-11 | 2018-12-14 | 南京理工大学 | A kind of light emitting diode with quantum dots and preparation method thereof based on room temperature perovskite material |
Non-Patent Citations (1)
| Title |
|---|
| FU-XING YU ET AL: "Full coverage all-inorganic cesium lead halide perovskite film for high-efficiency light-emitting diodes assisted by 1,3,5-tri(m-pyrid-3-ylphenyl)benzene", 《ORGANIC ELECTRONICS》 * |
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| CN111009613A (en) * | 2019-11-29 | 2020-04-14 | 武汉大学苏州研究院 | Perovskite quantum dot doped organic ultraviolet detector and preparation method thereof |
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Application publication date: 20191015 |