CN110335865A - A kind of two-way SCR device of high robust being able to suppress current saturation effect - Google Patents
A kind of two-way SCR device of high robust being able to suppress current saturation effect Download PDFInfo
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- CN110335865A CN110335865A CN201910561270.2A CN201910561270A CN110335865A CN 110335865 A CN110335865 A CN 110335865A CN 201910561270 A CN201910561270 A CN 201910561270A CN 110335865 A CN110335865 A CN 110335865A
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- conduction type
- heavily doped
- doped region
- well region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
- H01L27/0262—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base coupled to the collector of the other transistor, e.g. silicon controlled rectifier [SCR] devices
Abstract
The invention belongs to the static discharge of integrated circuit (Electrostatic Discharge; abbreviation ESD) protection field; it is related to a kind of two-way SCR device (DDSCR); specially a kind of two-way SCR device of high robust for being able to suppress current saturation effect, to the current saturation effect for overcoming existing DDSCR device to occur when electric current is larger.The present invention respectively increases a N-shaped heavily doped region in two N-shaped well regions on the basis of traditional DDS CR device and is directly connected to electrode or is connected to electrode by resistance; and then increase a new access in the devices; reduce the resistance value of device; it is able to suppress current saturation effect caused by device increases in high current due to resistance simultaneously, higher protective capability may be implemented.
Description
Technical field
The invention belongs to the static discharge of integrated circuit (Electrostatic Discharge, abbreviation ESD) protections to lead
Domain, and in particular to a kind of esd protection structure device, espespecially a kind of bidirectional triode thyristor rectifier SCR (Silicon Controlled
Rectifier) device, specially a kind of two-way SCR device of high robust for being able to suppress current saturation effect.
Background technique
Static discharge is limited the event that charge shifts between the object of two different potentials, ambipolar from first
Since transistor invention and first piece of IC chip are born, static discharge constitutes the prestige got worse to the reliability of IC chip
The side of body；Instantaneous pressure electrostatic pulse caused by ESD flows through chip interior by chip pin, so as to cause chip interior route damage
Hurt and can not work normally；For integrated circuit, during being used etc. from production to transport, the system integration and user all
It is possible that generating static discharge phenomenon on the pin of integrated circuit.
In certain applications, in order to improve driving capability or anti-interference ability, input signal amplitude is needed to be higher than electricity
The interface circuit of source voltage, therefore traditional ESD protective device cannot be used between I/O interface and power supply and be needed using having
The ESD protective device of two-way function.Two-way SCR device (Dual-Directional SCR, abbreviation DDSCR) is capable of providing because of it
Bidirectional protective and robustness with higher have become design bi-directional ESD protection scheme important selection, but DDSCR device because
The problem of causing robustness to decline for current saturation effect is an important factor for restricting its development and application.
It is as shown in Figure 1 the device architecture of traditional DDS CR, when the PAD1 to DDSCR device applies a positive pulse
The p-n junction that (PAD2 ground connection), first N-shaped well region 120 and p-type well region 150 are constituted is reverse-biased, when p-n junction both end voltage is greater than its snow
When collapsing breakdown voltage, which nearby generates a large amount of electron-hole pair；The hole of generation is through p-type well region 150, N-shaped well region
The 130 and arrival PAD2 of N-shaped heavily doped region 132, parasitic NPN unlatching；The electronics of generation is through N-shaped well region 120, N-shaped heavily doped region 121
PAD1 is reached, generates pressure drop on the resistance of N-shaped well region 120, causes to be made of p-type heavily doped region 122 and N-shaped well region 120
P-n junction positively biased, parasitic PNP pipe are opened, and SCR1 current channel is formed, shown in current path marks as shown in figure 1.
(PAD1 ground connection), first N-shaped well region 130 and p-type well region when the PAD2 to DDSCR device applies a positive pulse
The 150 p-n junction avalanche breakdowns constituted, generate a large amount of electron-hole pair；The hole of generation is through p-type well region 150, N-shaped well region
The 120 and arrival PAD1 of N-shaped heavily doped region 121, parasitic NPN unlatching；The electronics of generation is through N-shaped well region 130, N-shaped heavily doped region 132
PAD2 is reached, generates pressure drop on the resistance of N-shaped well region 130, causes to be made of p-type heavily doped region 131 and N-shaped well region 130
P-n junction positively biased, parasitic PNP pipe are opened, and SCR current channel is formed.
But when electric current is larger, current saturation effect occurs for DDSCR device, and test results are shown in figure 2 by TLP；When
Current saturation occurs for DDSCR device, and device resistance increases, and reduces the protective capability of DDSCR.Therefore, under advanced technologies
ESD protection, how to inhibit current saturation effect is an important research direction of DDSCR device optimization.
Summary of the invention
The purpose of the present invention is to provide a kind of high robust DDSCR (RDDSCR) devices for being able to suppress current saturation effect
Part, the device architecture is by increasing a current path, to effectively inhibit current saturation effect.
To achieve the above object, the technical solution adopted by the present invention are as follows:
A kind of two-way SCR device of high robust being able to suppress current saturation effect, comprising:
The first conduction type silicon substrate 110；Second of the conductive-type formed on the first described conduction type silicon substrate
Moldeed depth well region 140；The first the conduction type well region 150 formed on second of conduction type deep trap；It is described the first lead
Second of conduction type well region A 120, second of the conduction type well region B 130 formed on electric type well region；
Second of conduction type heavily doped region being connected with PAD1 is successively arranged in second of conduction type well region A
A1121, the first conduction type heavily doped region A2122 and second of conduction type heavily doped region A3123, and adjacent heavy doping
Shallow trench isolation is equipped between area；
Second of conduction type heavily doped region being connected with PAD2 is successively arranged in second of conduction type well region B
B3133, the first conduction type heavily doped region B1131 and second of conduction type heavily doped region B2132, and adjacent heavy doping
Shallow trench isolation is equipped between area；
Second of conduction type heavily doped region A3123 and second of conduction type heavily doped region B3It is equipped between 133
Shallow trench isolation.
Further, second of conduction type heavily doped region A3123 are connected to PAD1 by first resistor R1, institute
State second of conduction type heavily doped region B3133 are connected to PAD2, and the resistance value of first resistor R1 and by second resistance R2
The resistance value of two resistance R2 should be respectively smaller than the resistance value of second of conduction type well region A and second of conduction type well region B.
The beneficial effects of the present invention are:
The present invention provides a kind of two-way SCR device of the high robust for being able to suppress current saturation effect, the structure and tradition
Two-way SCR structure compare, by increasing a new access in the devices, reduce the resistance value of device, while can press down
Current saturation effect, may be implemented higher protective capability caused by device processed increases in high current due to resistance.
Detailed description of the invention
Fig. 1 is traditional DDS CR device architecture；
Fig. 2 is the TLP test result of traditional DDS CR and RDDSCR of the present invention；
Fig. 3 is a kind of high robust DDSCR device architecture proposed by the present invention；
Fig. 4 is that a kind of a kind of domain of the high robust DDSCR device proposed in the embodiment of the present invention realizes structure.
Specific embodiment
The following describes the present invention in detail with reference to the accompanying drawings and specific embodiments.
The present embodiment provides a kind of two-way SCR device of the high robust for being able to suppress current saturation effect, device architectures
As shown in Figure 3；It specifically includes:
P-type silicon substrate 110；The N-shaped deep-well region 140 formed on the p-type silicon substrate 110, effect is will be above it
SCR device is isolated with p-type silicon substrate；
The p-type well region 150 formed on the N-shaped deep-well region 140 forms two N-shaped well regions 120 in the p-type well region 150
With 130；121, p-type heavily doped regions 122 of a N-shaped heavily doped region are equipped in the N-shaped well region 120 and a N-shaped is heavily doped
Miscellaneous area 123, the N-shaped well region 130 is interior to be equipped with 133, p-type heavily doped regions 131 of a N-shaped heavily doped region and a N-shaped weight
Doped region 132；The N-shaped heavily doped region 121, p-type heavily doped region 122 are connected with PAD1, while N-shaped heavily doped region 123 is direct
It is connected to PAD1 or PAD1 is connected to by resistance R1；The p-type heavily doped region 131, N-shaped heavily doped region 132 and PAD2 phase
Even, while N-shaped heavily doped region 133 is directly connected to PAD2 or is connected to PAD2 by resistance R2；
The N-shaped heavily doped region 121, p-type heavily doped region 122, N-shaped heavily doped region 123, N-shaped heavily doped region 133, p-type weight
It is equipped with shallow trench isolation between doped region 131, N-shaped heavily doped region 132, as shown in shadow region in Fig. 2.
A kind of domain implementation such as Fig. 4 of the above-mentioned two-way SCR device of high robust for being able to suppress current saturation effect
Shown, embodiment RDDSCR device increases two active areas compared to traditional DDS CR device, but with identical protective capability
In the case where, the area of high robust DDSCR device proposed by the present invention is smaller.
The present embodiment high robust DDSCR device respectively increases by one in two N-shaped well regions on the basis of traditional DDS CR device
A N-shaped heavily doped region is simultaneously directly connected to electrode or is connected to electrode by resistance.When to the high robust DDSCR device
PAD1 apply a positive pulse when (PAD2 ground connection), first N-shaped well region 120 and p-type well region 150 composition p-n junction it is reverse-biased, when
When the p-n junction both end voltage is greater than its avalanche breakdown voltage, a large amount of electron-hole pair is generated near the p-n junction；It generates
Electronics through N-shaped well region 120, N-shaped heavily doped region 123 and resistance R1 reach PAD1, while generate electronics also through N-shaped well region 120,
N-shaped heavily doped region 121 reaches PAD1；Finally, the pressure drop on above-mentioned two passes causes by p-type heavily doped region 122 and N-shaped well region
The 120 p-n junction positively biaseds constituted, parasitic PNP pipe are opened；Due to the p-n junction positively biased that p-type well region 150 and N-shaped well region 130 are constituted, on
The collector current for stating parasitic PNP pipe flows into N-shaped well region 130, and one part of current flows into PAD2, shape by N-shaped heavily doped region 132
At SCR1 current channel, another part flows into PAD2 by N-shaped heavily doped region 133 and resistance R2, forms SCR2 current channel.By
Bilateral device in the device, be in structure it is full symmetric, reversed opening process is same as above.
Compared with traditional DDSCR device only has the path SCR1, the present embodiment high robust DDSCR device has SCR1
With two paths of SCR2, as shown in Figure 3；Since this high robust DDSCR device increases a paths, so that the electric current of device
Path broadens, and resistance reduces, and is able to suppress current saturation effect.It can be seen that high robust from the TLP test result of Fig. 2
The resistance of DDSCR device is smaller, and when electric current is larger, and there is no current saturation occurs, the protective capability of device is mentioned
It is high.
The above description is merely a specific embodiment, any feature disclosed in this specification, except non-specifically
Narration, can be replaced by other alternative features that are equivalent or have similar purpose；Disclosed all features or all sides
Method or in the process the step of, other than mutually exclusive feature and/or step, can be combined in any way.
Claims (2)
1. a kind of two-way SCR device of high robust for being able to suppress current saturation effect, comprising:
The first conduction type silicon substrate (110)；Second of the conduction type formed on the first described conduction type silicon substrate
Deep-well region (140)；The first the conduction type well region (150) formed on second of conduction type deep trap；It is described the first
Second of conduction type well region A (120), second of the conduction type well region B (130) formed on conduction type well region；
Second of conduction type heavily doped region A being connected with PAD1 is successively arranged in second of conduction type well region A1
(121), the first conduction type heavily doped region A2(122) and second of conduction type heavily doped region A3(123), and it is adjacent heavily doped
Shallow trench isolation is equipped between miscellaneous area；
Second of conduction type heavily doped region B being connected with PAD2 is successively arranged in second of conduction type well region B3
(133), the first conduction type heavily doped region B1(131) and second of conduction type heavily doped region B2(132), and it is adjacent heavily doped
Shallow trench isolation is equipped between miscellaneous area；
Second of conduction type heavily doped region A3(123) with second of conduction type heavily doped region B3(133) it is equipped between shallow
Trench isolations.
2. by the two-way SCR device of high robust described in claim 1, which is characterized in that second of conduction type heavy doping
Area A3(123) PAD1, second of conduction type heavily doped region B are connected to by first resistor (R1)3(133) pass through second
Resistance (R2) is connected to PAD2, and the resistance value of the resistance value of first resistor (R1) and second resistance (R2) should be respectively smaller than second and lead
The resistance value of electric type well region A and second of conduction type well region B.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910561270.2A CN110335865B (en) | 2019-06-26 | 2019-06-26 | High-robustness bidirectional SCR device capable of inhibiting current saturation effect |
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| CN201910561270.2A CN110335865B (en) | 2019-06-26 | 2019-06-26 | High-robustness bidirectional SCR device capable of inhibiting current saturation effect |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080309394A1 (en) * | 2005-07-08 | 2008-12-18 | Texas Instruments Incorporated | Guardringed scr esd protection |
| CN107731811A (en) * | 2017-09-06 | 2018-02-23 | 电子科技大学 | A kind of SCR device triggered by longitudinal BJT for ESD protection |
| CN108807374A (en) * | 2018-07-03 | 2018-11-13 | 江南大学 | A kind of high-voltage bidirectional Transient Voltage Suppressor |
-
2019
- 2019-06-26 CN CN201910561270.2A patent/CN110335865B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080309394A1 (en) * | 2005-07-08 | 2008-12-18 | Texas Instruments Incorporated | Guardringed scr esd protection |
| CN107731811A (en) * | 2017-09-06 | 2018-02-23 | 电子科技大学 | A kind of SCR device triggered by longitudinal BJT for ESD protection |
| CN108807374A (en) * | 2018-07-03 | 2018-11-13 | 江南大学 | A kind of high-voltage bidirectional Transient Voltage Suppressor |
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| CN110335865B (en) | 2021-12-03 |
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