CN110333642B - Light shield - Google Patents
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- CN110333642B CN110333642B CN201910621137.1A CN201910621137A CN110333642B CN 110333642 B CN110333642 B CN 110333642B CN 201910621137 A CN201910621137 A CN 201910621137A CN 110333642 B CN110333642 B CN 110333642B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
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Abstract
The invention provides a photomask, comprising: the photomask comprises an effective area and an edge area, wherein the edge area is positioned at the edge of the partial side edge of the effective area, the edge area and the effective area which is not provided with the edge area are respectively provided with a spaced current-layer alignment precision graph for measuring the alignment precision of the adjacent photomask, the photomask can be spliced into super-large-size graphs of various repeating units through repeated exposure, and the position alignment precision of the adjacent photomask in each exposure process can be measured through the current-layer alignment precision graph, so that the diversity of the photomask in a large-size process is improved, the photomask can be used for measuring the splicing precision of a special-shaped large-size chip, meanwhile, the edge area is only positioned at the edge of the partial side edge of the effective area, the use area of the edge area in the photomask is reduced, and the effective area of the photomask is improved.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a photomask.
Background
As semiconductor technology has developed, chips have become more widely used in various fields, and in new products and new fields, large-sized chips are required, and since the large-sized chips exceed the image field of a lithography machine and the maximum size of a single exposure is 26 × 33 mm, a splicing technology is required in the manufacturing process. As the name implies, in the chip manufacturing process, multiple or sequential exposures through one or more photomasks are used to finally splice a large-sized pattern.
The large-size photomask for the splicing process production needs to contain current-layer precision alignment patterns and previous-layer precision alignment patterns, and the current-layer alignment precision is particularly important for splicing large-size patterns. The design of the current layer alignment accuracy pattern in the photomask greatly affects the diversity of the photomask in large-scale stitching exposure applications.
Disclosure of Invention
Based on the above problems, an object of the present invention is to provide a photomask, which can be used for measuring the splicing accuracy of a chip with a large abnormal shape and has a large effective area.
To achieve the above object, the present invention provides a photomask, comprising: the photomask comprises an effective area and an edge area, wherein the edge area is positioned at the edge of the partial side edge of the effective area, and the edge area and the effective area which is not provided with the edge area are respectively provided with a current layer alignment precision figure which is spaced so as to be used for measuring the alignment precision of the adjacent photomask.
Optionally, in the photomask structure, the current-layer alignment precision pattern is a combined pattern formed by combining a plurality of sub-alignment precision patterns.
Optionally, in the photomask structure, the current-layer alignment precision pattern includes two sub-alignment precision patterns, the two sub-alignment precision patterns are different, and relative positions of the two sub-alignment precision patterns in the current-layer alignment precision pattern at different positions are different.
Optionally, in the mask structure, the mask is square, rectangular or diamond.
Optionally, in the mask structure, the edge region is located at an edge of an adjacent side of the active region.
Optionally, in the photomask structure, four sets of current-layer alignment precision patterns are formed on the photomask, and the four sets of current-layer alignment precision patterns are located at four corners of the photomask.
Optionally, in the reticle structure, the two sub-alignment precision patterns are different in shape or/and size.
Optionally, in the photomask structure, the two sub-alignment precision patterns are both square and have different sizes.
Optionally, in the photomask structure, the relative position of two sub-alignment precision patterns in adjacent current-layer alignment precision patterns is shifted by 90 degrees in a clockwise direction or a counterclockwise direction.
Optionally, in the photomask structure, the areas of the regions where the current-layer alignment precision patterns are located are the same, the regions where the current-layer alignment precision patterns are located are uniformly divided into four parts in a shape like a Chinese character 'tian', and two sub-alignment precision patterns only occupy any two adjacent parts.
Compared with the prior art, the photomask provided by the invention comprises an effective area and an edge area, wherein the edge area is positioned at the edge of the side edge of the effective area, the edge area and the effective area without the edge area are respectively provided with the current layer alignment precision patterns at intervals for measuring the alignment precision of the adjacent photomask, the photomask can be spliced into the oversized patterns of various repeating units through repeated exposure by using the photomask, and the position alignment precision of the adjacent photomask in each exposure process can be measured through the current layer alignment precision patterns, so that the diversity of the photomask in a large-size process is improved, and the photomask can be used for measuring the splicing precision of a special-shaped large-size chip. Meanwhile, the edge area is only positioned at the edge of part of the side edge of the effective area, so that the use area of the edge area in the photomask is reduced, and the effective area in the photomask is increased.
Drawings
Fig. 1 is a schematic view of a mask according to an embodiment of the invention.
FIG. 2 is a schematic diagram of a current layer alignment accuracy pattern of adjacent photomasks according to an embodiment of the present invention.
FIG. 3 is a diagram illustrating a layer alignment accuracy pattern when an adjacent mask is exposed according to an embodiment of the present invention.
Fig. 4a to 4f are schematic diagrams of oversized patterns formed by exposure and splicing of the photomask according to an embodiment of the present invention.
FIG. 5 is a schematic view of a mask according to a second embodiment of the present invention.
Fig. 6 is a schematic diagram of an oversized pattern formed by exposure and splicing of the photomask according to the second embodiment of the invention.
Detailed Description
In view of the above problems, the present invention provides a photomask, comprising: the photomask comprises an effective area and an edge area, wherein the edge area is positioned at the edge of the partial side edge of the effective area, and the edge area and the effective area which is not provided with the edge area are respectively provided with a current layer alignment precision figure at intervals so as to be used for measuring the alignment precision of the adjacent photomask.
The photomask provided by the invention comprises an effective area and an edge area, wherein the edge area is positioned at the edge of the side edge of the effective area, the edge area and the effective area without the edge area are respectively provided with a current layer alignment precision figure which is spaced for measuring the alignment precision of the adjacent photomask, the photomask can be used for splicing super-large-size figures of various repeating units through repeated exposure, and meanwhile, the position alignment precision of the adjacent photomask in each exposure process can be measured through the current layer alignment precision figure, so that the diversity of the photomask in a large-size process is improved, and the photomask can be used for measuring the splicing precision of a special-shaped large-size chip. Meanwhile, the edge area is only positioned at the edge of part of the side edge of the effective area, so that the use area of the edge area in the photomask is reduced, and the effective area in the photomask is increased.
In order to make the contents of the present invention more clearly understood, the contents of the present invention are further explained below with reference to the drawings of the specification. The invention is of course not limited to this particular embodiment, and general alternatives known to those skilled in the art are also covered by the scope of the invention.
It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention. The present invention is described in detail by using the schematic diagrams, and in the detailed description of the embodiments of the present invention, the schematic diagrams are not partially enlarged according to the general scale for convenience of description, and should not be taken as limiting the present invention.
The invention provides a photomask, which is used for completing the exposure of an oversized chip and comprises an effective area and an edge area, wherein the edge area is positioned at the edge of the partial side edge of the effective area, the effective area corresponds to a partial device area of the chip and is used for forming an exposure pattern to expose the chip, the edge area corresponds to a partial cutting path area of the chip, the splicing of a plurality of photomasks can form an oversized pattern corresponding to the chip, when adjacent photomasks are exposed, the effective area of one photomask can be overlapped with the edge area of the adjacent photomask, the edge area can not influence the exposure of the effective area, and the edge area of the photomask positioned at the edge is overlapped with the cutting path area of the chip. The edge area and the effective area without the edge area are provided with spaced current layer alignment precision figures to measure the alignment precision of the adjacent light covers, namely when the adjacent light covers are spliced, the alignment precision of two exposures is measured by the overlapping degree of the current layer alignment precision figures in the two light covers.
The current-layer alignment precision pattern is a combined pattern and can be formed by combining two or more sub-alignment precision patterns. In the embodiment of the present invention, the current-layer alignment precision pattern includes two sub-alignment precision patterns, the two sub-alignment precision patterns are different from each other, and relative positions of the two sub-alignment precision patterns in the current-layer alignment precision pattern at different positions are different from each other.
The photomask provided by the invention can be spliced into oversized graphs of various repeating units through repeated exposure, and meanwhile, the position alignment precision of the adjacent photomask in each exposure process can be measured through the current layer alignment precision graph, so that the diversity of the photomask in a large-size process is improved, and the photomask can be used for measuring the splicing precision of a special-shaped large-size chip. Meanwhile, the edge area is only positioned at the edge of part of the side edge of the effective area, so that the use area of the edge area in the photomask is reduced, and the effective area in the photomask is increased.
In the embodiment of the invention, the photomask is square, rectangular or rhombic. Of course, in other embodiments, the mask may have any shape known to those skilled in the art, and the invention is not limited thereto. The mask is described below as being rectangular or rhombus.
[ EXAMPLES one ]
FIG. 1 is a diagram illustrating a mask according to an embodiment of the present invention. As shown in fig. 1, the mask 10 is rectangular and includes an effective area 11 and an edge area 12, the edge area 12 is located at an edge of two adjacent sides of the effective area 11, the effective area 11 is used for forming a pattern for exposure, the edge area 12 corresponds to a scribe line area of a chip, and the edge area 12 and the effective area 11 where the edge area 12 is not located are both provided with spaced current layer alignment precision patterns 13. In this embodiment, four sets of the current-layer alignment accuracy patterns 13 are formed on the mask 10, and the four sets of the current-layer alignment accuracy patterns 13 are located at four corners of the mask 10.
The current-layer alignment precision pattern 13 is a combined pattern and is formed by combining sub-alignment precision patterns. In this embodiment of the present invention, the current-layer alignment precision pattern 13 includes two sub-alignment precision patterns, the two sub-alignment precision patterns are different, and the relative positions of the two sub-alignment precision patterns in the current-layer alignment precision pattern 13 at different positions are different. Specifically, the two sub-alignment precision patterns have different shapes and/or sizes, that is, different shapes or sizes, or different shapes and sizes. In this embodiment, the two sub-alignment precision patterns are both square and have different sizes, for example, the first sub-alignment precision pattern 131 and the second sub-alignment precision pattern 132 in fig. 1 are both square, and the size of the first sub-alignment precision pattern 131 is larger than that of the second sub-alignment precision pattern 132.
The positions of two sub-alignment precision patterns adjacent to the current-layer alignment precision pattern 13 are shifted by 90 degrees in the clockwise direction or the counterclockwise direction. As described with reference to fig. 1, four of the current-layer alignment precision patterns 13 in the clockwise direction, the first sub-alignment precision pattern 131 and the second sub-alignment precision pattern 132 are positioned by 90 degrees in a clockwise direction, for example, in the upper left corner of the mask 10, the second sub-alignment precision pattern 132 is located on the right side of the first sub-alignment precision pattern 131, in the upper right corner of the reticle 10, the second sub-alignment precision pattern 132 is shifted by 90 degrees clockwise with respect to the first sub-alignment precision pattern 131, is located at the lower side of the first sub-alignment precision pattern 131, in the lower right corner of the mask 10, the second sub-alignment precision pattern 132 is located on the left side of the first sub-alignment precision pattern 131, in the lower left corner of the mask 10, the second sub-alignment precision pattern 132 is located on the upper side of the first sub-alignment precision pattern 131. In other embodiments, the second sub-alignment precision pattern 132 may also be moved in a counterclockwise direction with respect to the first sub-alignment precision pattern 131. Of course, the first sub-alignment precision pattern 131 and the second sub-alignment precision pattern 132 may have other positional relationships and movement relationships, which is not limited in the present invention.
In this embodiment, the areas of the regions where the current-layer alignment precision patterns 13 are located are the same, that is, the areas of the regions for forming the current-layer alignment precision patterns 13 at the four corners of the photomask 10 are the same, for example, all have a square shape. The area where the current-layer alignment precision pattern 13 is located is divided into four parts in a field-shaped average manner, namely two opposite middle points of a square are connected into a line, the two lines intersect to divide the square into four small squares, and the two sub-alignment precision patterns only occupy any two adjacent parts of the square, namely the two self-alignment precision patterns are located in the two adjacent small squares. Specifically, referring to fig. 1, the area where the current-layer alignment precision pattern 13 is located is divided into four parts, which are defined as a first part, a second part, a third part and a fourth part clockwise, and the first sub-alignment precision pattern 131 and the second sub-alignment precision pattern 132 are located at the first part and the second part, i.e. at the upper half, at the upper left corner of the mask 10. In the upper right corner of the mask 10, the first sub-alignment precision pattern 131 and the second sub-alignment precision pattern 132 are located in the second and third parts, i.e., in the right half. In the lower right corner of the mask 10, the first sub-alignment precision pattern 131 and the second sub-alignment precision pattern 132 are located at the third and fourth portions, i.e., at the bottom half. In the lower left corner of the mask 10, the first sub-alignment precision pattern 131 and the second sub-alignment precision pattern 132 are located in the fourth and first portions, i.e., in the left half. In this way, when exposure is performed on the adjacent photo-masks 10, the position relationship between the eight sub-alignment precision patterns in the four photo-masks 10 is conveniently measured, as shown in fig. 2 and 3, fig. 2 is a schematic diagram of the current-layer alignment precision pattern of the adjacent photo-mask provided in the first embodiment of the present invention, fig. 3 is a schematic diagram of the current-layer alignment precision pattern of the adjacent photo-mask provided in the first embodiment of the present invention, and when the positions of the eight sub-alignment precision patterns in fig. 3 are measured, the position alignment precision of the four adjacent photo-masks 10 in the exposure can be obtained, that is, the position alignment precision of the adjacent exposure in each exposure process can be reflected.
The photomask provided by the invention can be spliced into oversized graphs of various repeating units through repeated exposure, as shown in FIGS. 4a to 4 f. In fig. 4a, the pattern shown in fig. 4a is formed by sequentially exposing three of the photo-masks 10 or by three exposures of one of the photo-masks 10, two of the photo-masks 10 on the left side, one of the photo-masks 10 on the right side, and aligned with the photo-mask 10 on the lower side of the left side. In fig. 4b, the pattern shown in the figure is formed by sequentially exposing four masks 10, but may be formed by exposing two masks 10 twice by exposing one mask 10 multiple times, or may be formed by other combinations. Two rows and two columns of large-size patterns are formed. In fig. 4c, there are two of the reticles 10 in the vertical direction, two of the reticles 10 on the left, two of the reticles 10 on the right, and the reticle 10 on the right is shifted down by a distance of one reticle with respect to the reticle 10 on the left. In fig. 4d, two of the reticles 10 are arranged in a vertical direction. In fig. 4e, three masks 10 are arranged in the horizontal direction. In FIG. 4f, there are three masks 10 in the horizontal direction and three in the vertical direction, forming a structure with three rows and three columns. Of course, only a few arrangement structures are listed in fig. 4a to 4f, and of course, in other embodiments, there are many combinations, and in this embodiment, the mask 10 is rectangular, and in other embodiments, the mask 10 may have various shapes known to those skilled in the art, and there are many combinations, so that irregular large-sized patterns can be formed.
In the mask 10, the edge region 12 is located at an edge of a part of the side edge of the effective region 11, and in this embodiment, the edge region 12 is formed only on an adjacent side edge of the mask 10. When the adjacent photomasks 10 are exposed, the edge region 12 of one photomask 10 may overlap with the active region 11 of another adjacent photomask 11, as described with reference to fig. 4a to 4f, the overlapping edge region 12 does not affect the active region 11, and the edge region 12 of the photomask 10 at the edge corresponds to a scribe line region of a chip, so that for a single photomask 10, a part of the edge region 12 is omitted, thereby reducing the area of the edge region 12 used in the photomask 10 and increasing the active area in the photomask 10.
The photomask provided by the invention comprises an effective area and an edge area, wherein the edge area is positioned at the edge of the partial side edge of the effective area, the edge area and the effective area without the edge area are respectively provided with a current layer alignment precision figure at intervals for measuring the alignment precision of the adjacent photomask, the photomask can be spliced into super-large-size figures of various repeating units through repeated exposure by using the photomask, and meanwhile, the position alignment precision of the adjacent photomask in each exposure process can be measured through the current layer alignment precision figure, so that the diversity of the photomask in a large-size process is improved, and the photomask can be used for measuring the splicing precision of a special-shaped large-size chip. Meanwhile, the edge area is only positioned at the edge of part of the side edge of the effective area, so that the use area of the edge area in the photomask is reduced, and the effective area in the photomask is increased.
[ example two ]
FIG. 5 is a schematic view of a mask according to a second embodiment of the present invention. As shown in fig. 5, the mask 10 is a diamond shape, and includes an effective area 11 and an edge area 12, the edge area 12 is located at an edge of two adjacent sides of the effective area 11, the effective area 11 is used for forming a pattern for exposure, the edge area 12 corresponds to a scribe line area of a chip, and the edge area 12 and the effective area 11 where the edge area 12 is not located are both provided with spaced current layer alignment precision patterns 13. In this embodiment, four sets of the current-layer alignment accuracy patterns 13 are formed on the mask 10, and the four sets of the current-layer alignment accuracy patterns 13 are located at four corners of the mask 10.
The current-layer alignment precision pattern 13 is a combined pattern and is formed by combining sub-alignment precision patterns. In this embodiment of the present invention, the current-layer alignment precision pattern 13 includes two sub-alignment precision patterns, the two sub-alignment precision patterns are different, and the relative positions of the two sub-alignment precision patterns in the current-layer alignment precision pattern 13 at different positions are different. Specifically, the two sub-alignment precision patterns have different shapes and/or sizes, that is, different shapes or sizes, or different shapes and sizes. In this embodiment, the two sub-alignment precision patterns are both square and have different sizes, for example, the first sub-alignment precision pattern 131 and the second sub-alignment precision pattern 132 in fig. 5 are both square, and the size of the first sub-alignment precision pattern 131 is larger than that of the second sub-alignment precision pattern 132.
The positions of two sub-alignment precision patterns in the adjacent current-layer alignment precision pattern 13 are shifted by 90 degrees in the clockwise direction or the counterclockwise direction. As described with reference to fig. 5, four of the current-layer alignment precision patterns 13 in the clockwise direction, the first sub-alignment precision pattern 131 and the second sub-alignment precision pattern 132 are positioned by 90 degrees in a clockwise direction, for example, in the upper left corner of the mask 10, the second sub-alignment precision pattern 132 is located on the right side of the first sub-alignment precision pattern 131, in the upper right corner of the mask 10, the second sub-alignment precision pattern 132 is shifted by 90 degrees clockwise with respect to the first sub-alignment precision pattern 131, is located at the lower side of the first sub-alignment precision pattern 131, in the lower right corner of the mask 10, the second sub-alignment precision pattern 132 is located on the left side of the first sub-alignment precision pattern 131, in the lower left corner of the mask 10, the second sub-alignment precision pattern 132 is located on the upper side of the first sub-alignment precision pattern 131. In other embodiments, the second sub-alignment precision pattern 132 may also be moved counterclockwise relative to the first sub-alignment precision pattern 131. Of course, the first sub-alignment precision pattern 131 and the second sub-alignment precision pattern 132 may have other positional relationships and movement relationships, which is not limited in the present invention.
In this embodiment, the areas of the regions where the current-layer alignment accuracy patterns 13 are located are the same, that is, the areas of the regions for forming the current-layer alignment accuracy patterns 13 on the four corners of the mask 10 are the same, for example, all have a diamond shape. The area where the current-layer alignment precision pattern 13 is located is divided into four parts in a field-shaped average manner, namely two opposite middle points of the rhombuses are connected into a line, the two lines intersect to divide the rhombuses into four small rhombuses, and the two sub-alignment precision patterns only occupy any two adjacent parts of the rhombuses, namely are located in the two adjacent small rhombuses. Specifically, referring to fig. 5, the position of the current-layer alignment precision pattern 13 is divided into four parts, which are defined as a first part, a second part, a third part and a fourth part clockwise, and the first sub-alignment precision pattern 131 and the second sub-alignment precision pattern 132 are located at the first part and the second part, i.e. at the upper half part, at the upper left corner of the mask 10. In the upper right corner of the mask 10, the first sub-alignment precision pattern 131 and the second sub-alignment precision pattern 132 are located in the second and third parts, i.e., in the right half. In the lower right corner of the mask 10, the first sub-alignment precision pattern 131 and the second sub-alignment precision pattern 132 are located at the third and fourth portions, i.e., at the bottom half. In the lower left corner of the mask 10, the first sub-alignment precision pattern 131 and the second sub-alignment precision pattern 132 are located in the fourth and first portions, i.e., in the left half. In this way, when the adjacent photomask 10 is exposed, the position relationship of the eight sub-alignment precision patterns in the four photomasks 10 can be conveniently measured.
The photomask provided by the invention can be spliced into oversized graphs of various repeating units through repeated exposure, as shown in FIG. 6. In fig. 6, a pattern as shown in fig. 6 is formed by sequentially exposing two masks 10 or by twice exposing one mask 10, and the two masks 10 are arranged in the vertical direction. Of course, in other embodiments, there are various combinations, and in this embodiment, the mask 10 is a diamond shape, and in other embodiments, the mask 10 can be other shapes known to those skilled in the art, and there can be various combinations, so that the irregular large-sized pattern can be formed.
In addition, in the mask 10, the edge region 12 is located at the edge of a part of the side of the effective region 11, and in the present embodiment, the edge region 12 is formed only on one adjacent side of the mask 10. When the adjacent photomasks 10 are exposed, the edge region 12 of one photomask 10 may overlap with the active region 11 of another adjacent photomask 11, as described with reference to fig. 4a to 4f, the overlapping edge region 12 does not affect the active region 11, and the edge region 12 of the photomask 10 at the edge corresponds to a scribe line region of a chip, so that for a single photomask 10, a part of the edge region 12 is omitted, thereby reducing the area of the edge region 12 used in the photomask 10 and increasing the active area in the photomask 10.
The photomask provided by the invention comprises an effective area and an edge area, wherein the edge area is positioned at the edge of the partial side edge of the effective area, the edge area and the effective area without the edge area are respectively provided with a current layer alignment precision figure at intervals for measuring the alignment precision of the adjacent photomask, the photomask can be spliced into super-large-size figures of various repeating units through repeated exposure by using the photomask, and meanwhile, the position alignment precision of the adjacent photomask in each exposure process can be measured through the current layer alignment precision figure, so that the diversity of the photomask in a large-size process is improved, and the photomask can be used for measuring the splicing precision of a special-shaped large-size chip. Meanwhile, the edge area is only positioned at the edge of part of the side edge of the effective area, so that the use area of the edge area in the photomask is reduced, and the effective area in the photomask is increased.
In summary, the photomask provided by the invention comprises an effective area and an edge area, wherein the edge area is located at the edge of the side edge of the effective area, the edge area and the effective area without the edge area are respectively provided with the current layer alignment precision patterns which are spaced apart for measuring the alignment precision of the adjacent photomask, the photomask can be used for splicing the oversized patterns of various repeating units by repeated exposure, and meanwhile, the position alignment precision of the adjacent photomask in each exposure process can be measured by the current layer alignment precision patterns, so that the diversity of the photomask in the oversized process is improved, and the photomask can be used for measuring the splicing precision of specially-shaped large-size chips. Meanwhile, the edge area is only positioned at the edge of part of the side edge of the effective area, so that the use area of the edge area in the photomask is reduced, and the effective area in the photomask is increased.
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.
Claims (10)
1. A photomask, comprising: the photomask comprises an effective area and an edge area, wherein the edge area is positioned at the edge of the partial side edge of the effective area, and the edge area and the effective area which is not provided with the edge area are respectively provided with a current layer alignment precision figure which is spaced so as to be used for measuring the alignment precision of the adjacent photomask.
2. The mask of claim 1, wherein the current layer alignment precision pattern is a composite pattern formed by combining a plurality of sub-alignment precision patterns.
3. The mask of claim 2, wherein the current layer alignment precision pattern comprises two sub-alignment precision patterns, the two sub-alignment precision patterns are different, and the relative positions of the two sub-alignment precision patterns in the current layer alignment precision pattern at different positions are different.
4. The mask of claim 3, wherein the mask has a square, rectangular, or diamond shape.
5. The mask of claim 4, wherein the edge region is located at an edge of an adjacent side of the active area.
6. The mask of claim 5, wherein four sets of current layer alignment precision patterns are formed on the mask, and four sets of current layer alignment precision patterns are located at four corners of the mask.
7. The reticle of claim 6, wherein the two sub-alignment precision patterns are different in shape or/and size.
8. The mask of claim 7, wherein the two sub-alignment precision patterns are square and have different sizes.
9. The mask of claim 8, wherein the relative positions of two sub-alignment precision patterns adjacent to the current layer alignment precision pattern are shifted by 90 degrees in a clockwise direction or a counterclockwise direction.
10. The mask of claim 9, wherein the areas of the regions where the current-level alignment precision patterns are located are the same, the regions where the current-level alignment precision patterns are located are evenly divided into four parts in a shape like a Chinese character 'tian', and two of the sub-alignment precision patterns only occupy any two adjacent parts.
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| CN111443566B (en) * | 2020-05-08 | 2022-10-11 | 京东方科技集团股份有限公司 | Mask plate |
| CN112309986B (en) * | 2020-10-30 | 2022-03-29 | 福建省晋华集成电路有限公司 | Layout structure, semiconductor device and forming method thereof |
| CN112731759B (en) * | 2021-02-02 | 2023-04-07 | 长鑫存储技术有限公司 | Method for forming photomask and photomask |
| CN116500855B (en) * | 2023-06-21 | 2023-11-24 | 长鑫存储技术有限公司 | Mask and semiconductor structure |
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