CN110329984A - A kind of method and device preparing solid nano hole based on dry etching - Google Patents
A kind of method and device preparing solid nano hole based on dry etching Download PDFInfo
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- CN110329984A CN110329984A CN201910490542.4A CN201910490542A CN110329984A CN 110329984 A CN110329984 A CN 110329984A CN 201910490542 A CN201910490542 A CN 201910490542A CN 110329984 A CN110329984 A CN 110329984A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00087—Holes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y35/00—Methods or apparatus for measurement or analysis of nanostructures
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0128—Processes for removing material
- B81C2201/013—Etching
- B81C2201/0132—Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling
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Abstract
The invention discloses a kind of method and devices that solid nano hole is prepared based on dry etching, its step are as follows: in search gas environment, the silicon-based substrate that lower half is etched to define tapered microcavity is bonded with the substrate that is bonded that the upper half is etched to define etching groove, forms search gas storage chamber；In dry etching equipment, dry etching is carried out using the upper half of plasma para-linkage silicon-based substrate, forms etching window；Gas leak detection sensor is connected with quadrupole mass spectrometer detection system, and realize that real time monitoring and etching in nano-pore preparation process terminate control by controlling terminal, after etching terminates, solid nano hole and its array is made in the junction of etching window and tapered microcavity cone.This method has highly sensitive, low delay the etching termination control ability under plasma environment, can alleviate the over etching problem in nano-pore preparation process to a certain extent, realizes the controllability preparation of small-bore solid nano hole and its array.
Description
Technical field
The invention belongs to micro-nano device manufacture fields, and in particular to a kind of side that solid nano hole is prepared based on dry etching
Method and device.
Background technique
The base sequence of human gene contains whole hereditary information of individual birth and old age, sickness and death.Pass through gene sequencing technology reality
The accurate decoding of existing human inheritance's password, is one of the focus on research direction of 21 century life science.Skill is sequenced as the third generation
One of main method of art, nano-pore sequencing technology have high-throughput, inexpensive, label-free, long etc. without expansion sign, reading length
Feature, it is considered to be most hopeful to realize 1000 dollars of next-generation human gene detection techniques below.
At the research initial stage of nano-pore sequencing technology, biological nano hole is widely used in scientist, such as alpha hemolysin albumen point
Son (Kasianowicz J J, Brandin E, Branton D et al.Proc.Natl.Acad.Sci.U.S.A.93,
13770, (1996)), smegmatis mycobacterium protein molecular (Faller M, Niederweis M and Schulz G
E.Science 303,1189, (2004)) etc. studied.However, biological nano hole is short there are the service life, environmentally sensitive, hole
The problems such as diameter is fixed.Compared with biological nano hole, solid nano hole has machinability, the robustness of device, nanoporous size
Flexibility and compatibility with semiconductor technology, therefore receive the extensive concern of people.
Currently, etching technics is widely used in the preparation process in silicon substrate solid nano hole.Its preparation principle
Be: forming cone using anisotropic wet etch in front side of silicon wafer, silicon chip back side using dry etching or wet etching into
Row is thinned, so that the cone tip part inside silicon wafer forms solid nano hole and its array.In experimentation, in the cone of micro-silicon chamber
After the exposure of shape point, etching is terminated immediately, otherwise over etching phenomenon will lead to the increase in nano-pore aperture.How to realize accurate
Control is terminated, has become one of the key challenge for restricting the preparation of solid nano hole at present.
The generation of over etching phenomenon in order to prevent is based on ionic current detection method (Park S R, Peng H, Ling X
S.Small, 3,116, (2007)) and color feedback method (Deng T, Chen J, Wu C N and Liu Z W, ECS
Journal of solid state science and technology, 419, (2013)) etching terminates control method quilt
It proposes in succession.However, the implementation of above two method all relies on the liquid environment in wet etching, there are problems that two o'clock: one,
Reactive ion etching rate is too fast, and 30 DEG C of KOH solution is about 60nm/min to the etch rate of silicon, cannot achieve to nanoporous size
Accurate control；Two, detection sensitivity is low, can not from nano-pore aperture event to etching termination there are longer delay
Efficiently solve the over etching problem in the preparation process of solid nano hole.It is a kind of to be terminated based on highly sensitive, low delay etching
The solid nano hole preparation method of control means urgently proposes, so that realizes sub- 5nm or less solid nano hole and its array can
The preparation of control property.
Summary of the invention
In order to overcome the above technical problems, the invention proposes a kind of methods for preparing solid nano hole based on dry etching
And device, the present invention have highly sensitive, low delay the etching termination control ability under plasma environment, can be realized small
The preparation of the controllability of aperture solid nano hole and its array.
To achieve the goals above, the present invention adopts the following technical scheme:
A kind of method that solid nano hole is prepared based on dry etching proposed by the present invention, which is characterized in that comprising as follows
Step:
S1, the first exposure mask protective layer and the second exposure mask protective layer are made respectively in the upper and lower surfaces of silicon-based substrate；
S2, etching the first exposure mask protective layer and the second exposure mask protective layer, form two coaxial etching windows；
S3, wet etching is carried out to the etching window of the second exposure mask protective layer, is formed from the lower half of silicon-based substrate
Tapered microcavity, the open end of the tapered microcavity are located at the lower surface of the silicon-based substrate；
S4, the second exposure mask protective layer in silicon-based substrate is bonded substrate in trace gas molecules with etching groove
It is bonded under environment, forms bonding face, and form search gas storage chamber between tapered microcavity and etching groove；The etching groove is complete
Tapered microcavity described in all standing；
S5, there is the upper surface of etching window to carry out dry etching to silicon-based substrate, until the point of search gas storage chamber
End is opened, and forms solid nano hole and solid nano hole array in the junction of etching window and tapered microcavity cone；
S6, para-linkage substrate carry out it is thinned, until the both ends of solid nano hole and solid nano hole array form access.
Further, in step S5, further include when there is the upper surface of etching window to carry out dry etching silicon-based substrate
Following steps: the gas componant outside cavity formed in such a way that mass spectrum is fed back to dry etching is monitored, if tracer gas
The tip of body storage chamber monitors the leakage of search gas when being opened, then stops etching.
The present invention also propose it is a kind of realize the above-mentioned device that solid nano hole method is prepared based on dry etching, including be placed in
Silicon-based substrate and bonding substrate, the plasma in dielectric cavity body under plasma environment are produced by plasma generating device
It is raw, the first exposure mask protective layer and the second exposure mask protective layer, the silicon substrate have been covered each by the upper and lower surfaces of the silicon-based substrate
The lower half of substrate is formed with the tapered microcavity that open end is located at the silicon-based substrate lower half, the bonding substrate through wet etching
The upper half be etched to define diameter be greater than the tapered microcavity open end diameter etching groove, and the tapered microcavity and carve
Lose slot coaxial arrangement, the silicon-based substrate be bonded substrate in the environment of trace gas molecules and be bonded, formation bonding face, by institute
State tapered microcavity and etching groove composition search gas storage chamber；Be provided in the dielectric cavity body trace gas leak detection sensor,
Sample transfer system between etch chamber valve, vavuum pump valve, the loading hatch positioned at medium cavity and etch chamber valve is located at
Sample plummer between the etch chamber valve and vavuum pump valve is respectively equipped with dry method quarter on the side wall of the medium cavity
Air inlet, plasma RF source are lost, the dielectric cavity is equipped with the quadrupole rod being connected with the trace gas leak detection sensor in vitro
Mass spectrograph detection system, the controlling terminal being connected with the plasma generating device and quadrupole mass spectrometer detection system are led to
It crosses the controlling terminal and realizes that real time monitoring and etching in nano-pore preparation process terminate control.
Further, detailed process is as follows for the real time monitoring in the nano-pore preparation process and etching termination control:
During dry etching, the aperture event in solid nano hole causes search gas storage chamber to be opened, the trace gas molecules
The outside for diffusing to search gas storage chamber acquires through the trace gas leak detection sensor and enters quadrupole mass spectrometer inspection
It is analyzed by mass spectrometry in examining system, controlling terminal controls the etch cycle of plasma generating device stopping next time, thus real
Now the accurate feedback of nano-pore preparation process is controlled.
The present invention also propose it is a kind of utilize it is above-mentioned based on dry etching prepare solid nano hole method preparation solid nano
Hole, comprising:
The silicon-based substrate of the first exposure mask protective layer and the second exposure mask protective layer, silicon substrate lining are covered each by upper and lower surfaces
The lower part at bottom is formed with the tapered microcavity that open end is located at the silicon-based substrate lower part through wet etching；The top of silicon-based substrate through etc.
Plasma etching is formed with the dry etching window coaxial with the tapered microcavity；
Top is formed with the bonding substrate of etching groove through over etching, and the etching groove and the tapered microcavity are coaxially disposed,
And the diameter of the etching groove is greater than the open end diameter of the tapered microcavity；
The silicon-based substrate the second exposure mask protective layer be bonded between substrate through trace gas molecules environment under be bonded
The bonding face of formation；
And the search gas storage chamber being made of the tapered microcavity and etching groove, when the point of the search gas storage chamber
When end is opened, solid nano hole and solid nano hole battle array are formed in the junction of the etching window and tapered microcavity cone
Column.
A kind of method and device being prepared solid nano hole based on dry etching proposed by the present invention is at least had following excellent
Point:
First, the controllability preparation of solid nano hole and its array is realized under no liquid environment, can effectively avoid wet process
In etching process, the problems such as liquid environment bring bubble, solution fluctuation, while water-bath adds during being able to solve wet etching
The problems such as temperature distributing disproportionation caused by heat weighs improves the uniformity and sensitivity of nano-pore preparation.
Second, the tapered microcavity of suitable dimension is formed inside silicon wafer, is prepared on this basis based on dry etching
Tapered solid nano-pore can well solve the too long problem in conventional solid nano-pore sequencing channel, improve gene sequencing
Spatial resolution, and can be controlled by the distinctive rectification characteristic of bellmouth through molecular motion state therein.
Third, compared with tradition terminates control method based on ionic current detection method, the etching of color feedback method, this method
Control thinking is terminated using the etching fed back based on search gas mass spectrum, can be effectively shortened from nano-pore aperture moment topenIt arrives
Etch end time tstopBetween lag time length, alleviate t to a certain extentopenCaused after moment by over etching phenomenon
Nano-pore borehole enlargement the problem of, established for the solid nano hole that high efficiency, mass prepare Asia 5nm and following aperture good
Good basis.
Detailed description of the invention
The present invention is described further with reference to the accompanying drawings and examples.
Fig. 1 is shown as the method flow diagram of the invention that solid nano hole is prepared based on dry etching；
Fig. 2 is shown as the schematic device of the invention that solid nano hole is prepared based on dry etching；
Fig. 3 is shown as solid nano hole sample schematic diagram of the invention；
Fig. 4 is shown as solid nano hole array sample schematic diagram of the invention；
Mark is explained as follows in figure:
1 silicon-based substrate
2 bonding substrates
3 first exposure mask protective layers
4 second exposure mask protective layers
5 bonding faces
6 dry etching windows
7 tapered microcavitys
8 etching grooves
9 trace gas molecules
10 trace gas leak detection sensors
11 plasma generating devices
12 medium cavitys
13 plasmas
14 dry etching air inlets
15 quadrupole mass spectrometer detection systems
16 controlling terminals
17 loading hatch
18 sample transfer systems
19 etch chamber valves
20 plasma RF sources
21 sample plummers
22 vavuum pump valves
23 solid nano holes
24 solid nano hole arrays
Specific embodiment
The embodiment of the present invention is described below in detail, examples of the embodiments are shown in the accompanying drawings, wherein from beginning to end
Same or similar label indicates same or similar element or element with the same or similar functions, below with reference to attached
The embodiment of figure description is exemplary, it is intended to is used to explain the present invention, and is not considered as limiting the invention.
Such as Fig. 1, shown in 2,3,4, a kind of method for preparing solid nano hole based on dry etching of the embodiment of the present invention is wrapped
Containing following steps:
S1, the first exposure mask protective layer 3 and the second exposure mask protective layer 4 are made respectively in the upper and lower surfaces of silicon-based substrate 1；
S2, the first exposure mask protective layer 3 of etching and the second exposure mask protective layer 4, form two coaxial etching windows；
S3, wet etching is carried out to the etching window of the second exposure mask protective layer 4, is formed from the lower part of silicon-based substrate 1 tapered
Microcavity 7, the open end of the tapered microcavity 7 are located at the lower surface of silicon-based substrate 1；
S4, the second exposure mask protective layer 4 in silicon-based substrate 1 is bonded substrate 2 in search gas point with etching groove 8
It is bonded in the environment of son 9, forms bonding face 5, and form search gas storage chamber between tapered microcavity 7 and etching groove 8；Etching
Tapered microcavity 7, i.e. diameter of the diameter of etching groove 8 greater than tapered 7 open end of microcavity is completely covered in slot 8；
S5, there is the upper surface of etching window to carry out dry etching to silicon-based substrate 1, until the point of search gas storage chamber
End is opened, and forms solid nano hole 23 and solid nano hole array in the junction of etching window 6 and tapered 7 cone of microcavity
24；
S6, para-linkage substrate 2 carry out it is thinned, until the both ends of solid nano hole 2 and solid nano hole array 24 formed it is logical
Road.
Further, in step S5, further include when there is the upper surface of etching window to carry out dry etching silicon-based substrate 1
Following steps: the gas componant outside cavity formed in such a way that mass spectrum is fed back to dry etching is monitored, if tracer gas
The tip of body storage chamber 7 monitors the leakage of search gas when being opened, then stops etching.
Preferably, solid nano hole 23, solid nano hole array 24 aperture be 0.5nm -100nm.
Preferably, silicon-based substrate 1 is the silicon on nonisulated substrate or the silicon in insulating substrate.
Preferably, bonding substrate 2 can use the materials such as silicon, the silicon in insulating substrate, glass, the metal on nonisulated substrate
Material.
Preferably, the first exposure mask protective layer 3 and the second exposure mask protection 4 can use silica, silicon nitride, chromium, photoetching
The materials such as glue.
Preferably, trace gas molecules 9 can be using Inert gas molecules such as argon gas, helium.
Preferably, the purpose being bonded under 9 environment of trace gas molecules is to form search gas storage chamber, and bonding face 5 can
Using silicon-silicon bond conjunction, silicon on glass bonding, silicon-silica-bound, silica-silica bonding or metal-metal
The modes such as bonding are made.
The a kind of of the embodiment of the present invention realizes the above-mentioned device that solid nano hole method is prepared based on dry etching: the device
It is situated between including the silicon-based substrate 1 being placed in medium cavity 12 under 13 environment of plasma and bonding substrate 2, plasma 13 by being located at
Plasma generating device (11) outside matter cavity 12 generates, and has been covered each by first in the upper and lower surfaces of silicon-based substrate 1 and has covered
Film protective layer 3 and the second exposure mask protective layer 4, the lower half of silicon-based substrate 1 are formed with open end through wet etching and are located at the silicon substrate
The tapered microcavity 7 of 1 lower half of substrate, it is straight greater than tapered 7 open end of microcavity that the upper half of bonding substrate 2 has been etched to define diameter
The etching groove 8 of diameter, and tapered microcavity 7 and etching groove 8 are coaxially disposed, silicon-based substrate 1 be bonded substrate 2 in trace gas molecules 9
In the environment of be bonded, formed bonding face 5, search gas storage chamber is formed by tapered microcavity 7 and etching groove 8.In medium cavity 12
It is provided with trace gas leak detection sensor 10, etch chamber valve 19, vavuum pump valve 22, the loading hatch 17 positioned at medium cavity 12
Sample transfer system 18 between etch chamber valve 19, the sample between etch chamber valve 19 and vavuum pump valve 22 are held
Microscope carrier 21, is respectively equipped with dry etching air inlet 14, plasma RF source 20 on the side wall of medium cavity 12, outside medium cavity 12
Equipped with the quadrupole mass spectrometer detection system 15 being connected with trace gas leak detection sensor 10, with plasma generating device 11 and
The connected controlling terminal 16 of quadrupole mass spectrometer detection system 15, is realized in nano-pore preparation process by the controlling terminal 16
Real time monitoring and etching terminate control.Specifically, before dry etching, sample is arrived by loading hatch 17 through sample transfer system 18
Up to sample plummer 21, during dry etching, the upper half of silicon-based substrate 1 is etched through plasma 13, formed with it is tapered micro-
The coaxial dry etching window 6 of chamber 7, in the junction of etching window 6 and tapered 7 cone of microcavity formation solid nano hole 23 and admittedly
State nanohole array 24.
Further, detailed process is as follows: dry method for the real time monitoring in nano-pore preparation process and etching termination control
In etching process, the aperture event in solid nano hole causes search gas storage chamber to be opened, and trace gas molecules 9, which diffuse to, deposits
The outside of storage chamber enters through the acquisition of trace gas leak detection sensor 10 and carries out mass spectrum point in quadrupole mass spectrometer detection system 15
Analysis, controlling terminal 16 control the etch cycle of the stopping of plasma generating device 11 next time, are achieved in and prepare to nano-pore
The accurate feedback of process controls.
Each synthesizer part employed in apparatus of the present invention is the conventional products of this field.
The solid nano hole prepared by the above method, comprising: be covered each by the first exposure mask protective layer in upper and lower surfaces
3 and second exposure mask protective layer 4 silicon-based substrate 1, the lower part of silicon-based substrate 1 is formed with open end through wet etching and is located at the silicon substrate
The tapered microcavity 7 of 1 lower part of substrate；The top of silicon-based substrate 1 is etched through plasma 13, is formed with coaxial with tapered microcavity 7
Dry etching window 6；Top is formed with the bonding substrate 2 of etching groove 8 through over etching, and etching groove 8 is coaxially set with tapered microcavity 7
It sets, and the diameter of the etching groove 8 is greater than the open end diameter of tapered microcavity 7；Silicon-based substrate 1 the second exposure mask protective layer 4 with
Bonding face 5 between bonding substrate 2 by being bonded together to form under 9 environment of trace gas molecules；And by tapered microcavity 7 and etching groove 8
The search gas storage chamber of composition, when the tip of the search gas storage chamber is opened, in etching window 6 and tapered microcavity 7
The junction of cone forms solid nano hole 23 and solid nano hole array 24.
It is to be understood that: the above is only a preferred embodiment of the present invention, not to limit this hair
Bright, any modifications, equivalent replacements and improvementsmade within the spirit and principles of the invention, etc. should be included in the present invention
Protection scope within.
Claims (11)
1. a kind of method for preparing solid nano hole based on dry etching, which is characterized in that comprise the following steps:
S1, the first exposure mask protective layer (3) and the second exposure mask protective layer (4) are made respectively in the upper and lower surfaces of silicon-based substrate (1)；
S2, etching the first exposure mask protective layer (3) and the second exposure mask protective layer (4), form two coaxial etching windows；
S3, wet etching is carried out to the etching window of the second exposure mask protective layer (4), from the lower half shape of silicon-based substrate (1)
At tapered microcavity (7), the open end of the tapered microcavity (7) is located at the lower surface of the silicon-based substrate (1)；
S4, the second exposure mask protective layer (4) on silicon-based substrate (1) is bonded substrate (2) in tracer gas with etching groove (8)
Body molecule is bonded in the environment of (9), is formed bonding face (5), and tracer gas is formed between tapered microcavity (7) and etching groove (8)
Body storage chamber；The tapered microcavity (7) is completely covered in the etching groove (8)；
S5, there is the upper surface of etching window to carry out dry etching to silicon-based substrate (1), until the tip of search gas storage chamber
It is opened, forms solid nano hole (23) and solid nano hole battle array in etching window (6) and the junction of tapered microcavity (7) cone
It arranges (24)；
S6, para-linkage substrate (2) carry out it is thinned, until the both ends of solid nano hole (23) and solid nano hole array (24) are formed
Access.
2. the method according to claim 1, wherein there is etching window to silicon-based substrate (1) in step S5
Upper surface carries out further comprising the steps of when dry etching: outside the cavity formed in such a way that mass spectrum is fed back to dry etching
Gas componant is monitored, if the tip of search gas storage chamber (7) monitors the leakage of search gas when being opened, is stopped
Etching.
3. the method according to claim 1, wherein the solid nano hole (23), solid nano hole array
(24) aperture is 0.5nm -100nm.
4. the method according to claim 1, wherein the silicon-based substrate (1) be nonisulated substrate on silicon or
Silicon in insulating substrate.
5. the method according to claim 1, wherein bonding substrate (2) is using the silicon on nonisulated substrate,
Or silicon, glass or metal in insulating substrate.
6. the method according to claim 1, wherein the first exposure mask protective layer (3) and the protection of the second exposure mask
Layer (4) uses silica, silicon nitride, chromium or photoresist.
7. the method according to claim 1, wherein the trace gas molecules (9) are Inert gas molecule, packet
Include argon gas, helium gas molecules.
8. the method according to claim 1, wherein the bonding face (5) is closed using silicon-silicon bond, si-glass key
The mode of conjunction, the bonding of silicon-silica-bound, silica-silica or metal-metal bonding.
9. it is a kind of according to claim 1~any one of 8 described in the device of solid nano hole method is prepared based on dry etching,
It is characterised in that it includes the silicon-based substrate (1) and bonding substrate that are placed under medium cavity (12) interior plasma (13) environment
(2), the plasma (13) is generated by plasma generating device (11), in the upper and lower surfaces point of the silicon-based substrate (1)
It is not covered with the first exposure mask protective layer (3) and the second exposure mask protective layer (4), the lower half of the silicon-based substrate (1) is carved through wet process
Erosion is formed with the tapered microcavity (7) that open end is located at silicon-based substrate (1) lower half, the upper half warp of bonding substrate (2)
Etching is formed with the etching groove (8) that diameter is greater than tapered microcavity (7) the open end diameter, and the tapered microcavity (7) and quarter
Lose slot (8) coaxial arrangement, the silicon-based substrate (1) be bonded substrate (2) in the environment of trace gas molecules (9) and be bonded, shape
At bonding face (5), search gas storage chamber is formed by the tapered microcavity (7) and etching groove (8)；In the medium cavity (12)
It is provided with trace gas leak detection sensor (10), etch chamber valve (19), vavuum pump valve (22), is located at medium cavity (12)
Sample transfer system (18) between loading hatch (17) and etch chamber valve (19) is located at the etch chamber valve (19) and vacuum
Sample plummer (21) between pump valve (22) is respectively equipped with dry etching air inlet on the side wall of the medium cavity (12)
(14), plasma RF source (20), the medium cavity (12) is externally provided with to be connected with the trace gas leak detection sensor (10)
Quadrupole mass spectrometer detection system (15), with the plasma generating device (11) and quadrupole mass spectrometer detection system
(15) connected controlling terminal (16) realizes the real time monitoring and etching in nano-pore preparation process by the controlling terminal (16)
Terminate control.
10. device according to claim 9, which is characterized in that real time monitoring and quarter in the nano-pore preparation process
Erosion terminates control, and detailed process is as follows: during dry etching, the aperture event in solid nano hole causes search gas to store
Chamber is opened, and the trace gas molecules (9) diffuse to the outside of search gas storage chamber, senses through the trace gas leak detection
Device (10) acquisition enter the quadrupole mass spectrometer detection system (15) in is analyzed by mass spectrometry, controlling terminal (16) control etc. from
Daughter generation device (11) stops etch cycle next time, is achieved in the accurate feedback control to nano-pore preparation process.
11. solid nano hole made from the method according to claim 1~any one of 8 characterized by comprising
The silicon-based substrate (1) of the first exposure mask protective layer (3) and the second exposure mask protective layer (4), silicon are covered each by upper and lower surfaces
The lower part of base substrate (1) is formed with the tapered microcavity (7) that open end is located at silicon-based substrate (1) lower part through wet etching；Silicon substrate
The top of substrate (1) is etched through plasma (13), is formed with the dry etching window (6) coaxial with the tapered microcavity (7)；
Top is formed with the bonding substrate (2) of etching groove (8) through over etching, and the etching groove (8) and the tapered microcavity (7) are same
Axis setting, and the diameter of the etching groove (8) is greater than the open end diameter of the tapered microcavity (7)；
The second exposure mask protective layer (4) of the silicon-based substrate (1) be bonded between substrate (2) through trace gas molecules (9) ring
The bonding face (5) bonded together to form under border；
And the search gas storage chamber being made of the tapered microcavity (7) and etching groove (8), when the search gas storage chamber
When tip is opened, formed in the etching window (6) and the junction of tapered microcavity (7) cone solid nano hole (23) and solid
State nanohole array (24).
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| CN113432778A (en) * | 2021-05-25 | 2021-09-24 | 歌尔微电子股份有限公司 | MEMS differential pressure sensor and manufacturing method thereof |
| CN114264800A (en) * | 2021-12-23 | 2022-04-01 | 清华大学 | Method for manufacturing nanopore, nanopore structure and single nanopore sensor |
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