CN110327544A - A kind of implanted high-density electrode point flexible stylet electrode and preparation method - Google Patents
A kind of implanted high-density electrode point flexible stylet electrode and preparation method Download PDFInfo
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- A61N1/04—Electrodes
- A61N1/05—Electrodes for implantation or insertion into the body, e.g. heart electrode
- A61N1/0526—Head electrodes
- A61N1/0529—Electrodes for brain stimulation
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- A61N1/32—Applying electric currents by contact electrodes alternating or intermittent currents
- A61N1/36—Applying electric currents by contact electrodes alternating or intermittent currents for stimulation
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- A61N1/3606—Implantable neurostimulators for stimulating central or peripheral nerve system adapted for a particular treatment
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Abstract
The present invention provides a kind of implanted high-density electrode point flexible stylet electrode and preparation methods, electrode includes polymer insulation layer and metal layer, polymer insulation layer and metal layer are successively arranged to overlap from bottom to top, form the electrode structure being made of multiple layer polymer insulating layer and more metal layers, and every layer of metal layer is coated between polymer insulation layer, makes electric insulation between spaced apart metal layer；Electrode points are arranged in upper surface, lower surface and the one or both sides face of electrode, form surface electrode point and side electrode point on the electrode.The present invention provides a kind of design schemes of the electrode points of side distribution, are distributed electrode points in the upper surface, lower surface, side of electrode, and relative to common surface electrode point, the distribution mode of side electrode point has higher electrode dot density.
Description
Technical field
The present invention relates to the flexible stylet Implanted bioelectrodes that biomedical engineering technology field uses specifically to relate to
And a kind of implanted high-density electrode point flexible stylet electrode and preparation method.
Background technique
Brain-computer interface technology provides a kind of brain and extraneous exchange way, it gets around nervus peripheralis and musculature, leads to
Artificial means are crossed directly to pass the signal of brain with the external world or extraneous information is passed to brain, base by way of stimulation
It is some to cause the patient of paralysis that pass through brain with physical disabilities, muscular atrophy or peripheral nerve injury in this mode
The electric signal that machine interface directly reads brain is realized nerve connection or is connect with external accessory, recaptures movement and feels function
Energy.
Eighties of last century the seventies and eighties, neurosurgery scholar Benabid of Grenoble, France university et al. are transported for the first time
Trembling for Parkinson's disease is treated with nerve electrode stimulation nucleus ventralis intermedius thalami, and obtains more promising result.Nowadays, U.S.'s food
Drug Administration respectively at 1997,2003 with 2009 approval deep brain stimulation (DBS) as treatment means use
In essential tremor, Parkinson's disease, myodystony and obsessive-compulsive disorder.Relative to common operation radiofrequency ablation and drug therapy, DBS
Have the characteristics that efficient height, Small side effects, electrode implant surgery be minimally invasive, therapeutic effect controllable reversible, few intercurrent disease.In addition,
Also there is certain application prospect for irritability syndrome after depression, Alzheimer's disease, chronic ache and wound.
In in the past few decades, there are many nerve microelectrodes to be applied to neural circuitry research, such as Robinson
D.A. a kind of gold mentioned in paper " The electrical properties of metal microelectrodes "
Belong to silk electrode, this wire electrode is simple for production, and low in cost, small to biological bulk damage after implantation, being used earliest is also
The most mature a kind of nerve microelectrode, but such electrode only has single probe and only has an electrode points on front end, compared with
Few electrode points can no longer meet the demand of high-resolution stimulation and record.With the development of MEMS technology, it is based on silicon substrate
The high-density electrode at bottom emerges in multitude, wherein most typical is exactly Utah electrode and Michigan's electrode, such as Brown Univ USA
The researchers such as Leigh R.Hochberg and John P.Donoghue in paper " Neuronal ensemble control
The Utah electrode mentioned in of prosthetic devices by a human with tetraplegia ", three had
Dimension array structure makes it relatively be suitble to the activity of different depth neuron in record cortex, the K.Najafi of University of Michigan, the U.S.
With the researchers such as K.D.Wise in paper " A high-yield IC-compatible multichannel recording
Michigan's electrode that array " is mentioned only just is integrated with multiple electrodes point on single probe, has higher integrated level and electrode
Dot density.Compatible MEMS technology makes the processing of this kind of silicon based electrode controllability with higher and repeatability, but silicon phase
It can cause the decline of peripheral nerve signal in long-term embedded process to the higher Young's modulus of bio-tissue, tissue necrosis,
In addition, the nerve probe of silicon substrate is easy to happen after by tangential stress and fractures.
In recent years, the development for benefiting from bioavailable polymer and its processing technology, the electrode based on fexible film obtain
It realizes, such as Angela Tooker et al. is in article " Polymer Neural Interface with Dual-Sided
The fexible film based on polyimides mentioned in Electrodes for NeuralStimulation and Recording "
Probe, this electrode use substrate of the polyimides as electrode, and modulus lacks two orders of magnitude, therefore biology relative to silicon base
Compatibility is more preferable, more advantageous on being chronically implanted, still, since processable polymer craft precision is far away from silicon-based technology
Precision, so equally making highdensity electrode on flexible polymer surface by traditional processing technology without image of Buddha silicon based electrode
Point.
Summary of the invention
For the defects in the prior art, the object of the present invention is to provide a kind of implanted high-density electrode point flexible stylets
Electrode and preparation method.
According to a first aspect of the present invention, a kind of implanted high-density electrode point flexible stylet electrode, the electrode are provided
Including polymer insulation layer and metal layer, the polymer insulation layer and the metal layer are successively arranged to overlap from bottom to top, shape
At the electrode structure that metal layer described in the polymer insulation layer described in multilayer and multilayer is constituted, and every layer of metal layer is coated on
Between the polymer insulation layer, make electric insulation between the spaced apart metal layer；
Electrode points are arranged in upper surface, lower surface and the one or both sides face, refer to formation table on the electrodes
Face electrode points and side electrode point.
High-density electrode point of the present invention is referred in the upper surface, lower surface and one or both sides of single probe
Electrode points are arranged in face.The integrated quantity that single probe powers on pole can be improved in the mode of such setting electrode points, reaches highly dense
Spend the purpose of electrode points.
Further, the surface electrode point is by being covered in the top layer of the electrode and the polymer insulation of the bottom
Layer wrap up the patterned metal layer and at corresponding electrode points aperture formed.
Further, the side electrode point is by the way that the metal layer end is exposed in the polymer insulation layer shape
At stacking out highdensity electrode lattice array in the side of the electrode.
Preferably, the polymer insulation layer is biological biocompatible flexible polymer material.
It is further preferred that any one in the bio-compatible flexible polymer material selection polyimides, Parylene
Kind.
Preferably, every layer of polymer insulation layer with a thickness of 1 μm~10 μm.
Preferably, the integral thickness of the electrode is 10 μm~50 μm.
Preferably, the metal layer is patterned metallic conductor or patterned conducting polymer, wherein the metal
Conductor is gold, platinum, chromium, any one in titanium；The conducting polymer is carbon nanotube, graphene, a kind of in silver nanowires
Or two or more mixed polymer.
According to a second aspect of the present invention, a kind of preparation method of implanted high density flexible probe electrode is provided, comprising:
On substrate spin coating or deposition bottom polymer insulation layer and using photoetching process it is graphical；
One layer of metal adhesion layers and one layer are successively sputtered or evaporated in the patterned bottom polymer insulation layer
Metal layer, spin coating positive photoresist is as exposure mask on the metal layer, by front baking, exposure, development and after dry, using ion
Beam etching or wet etching, obtain patterned metal layer；
Spin coating and one layer of polymeric insulating layer is graphically descended again on the patterned metal layer；
Upper spin coating in the graphical lower one layer of polymeric insulating layer and graphical next layer of metal layer again, will be described poly-
Close object insulating layer, the metal layer is arranged to overlap from bottom to top, the polymer insulation layer up to being stacked to top；Every layer
The wire end of the metal layer is exposed to form side electrode point in the polymer insulation layer outer end, in the described poly- of top
Aperture forms upper and lower surfaces electrode points in the way of photoetching in the polymer insulation layer of conjunction object insulating layer and the bottom
And pad interface.
According to a third aspect of the present invention, a kind of biological electrographic recording or electric stimulation electrode are provided, including above-mentioned implanted
High-density electrode point flexible stylet electrode.
Compared with prior art, the present invention have it is following at least one the utility model has the advantages that
1, a kind of design scheme of the electrode points of side distribution is proposed in above structure of the present invention, in the upper table of electrode
Face, lower surface, side are distributed electrode points, and relative to common surface electrode point, the distribution mode of side electrode point has more
High electrode dot density, this electrode points expose polymer insulation layer using the side of metal layer, due to thin polymer film and gold
Belong to the very thin thickness of layer, this design has higher integrated level relative to the microelectrode being commonly lithographically formed, so that electrode is whole
The spatial resolution of body further increases.
It 2, according to actual needs, in the method can be with using the processing technology of MEMS in the above-mentioned preparation method of the present invention
Realize the processing of high controllable, high repeatability.
3, be not only compatible in the above-mentioned electrode of the present invention and preparation method the high controllability of preparation silicon substrate probe electrode with
And repeatability, make electrode whole more soft as the base material of electrode relative to the lower polymer of silicon modulus,
It is moved with the movement of tissue, reduces the probability damaged the damage of tissue and electrode itself.
4, the above-mentioned implanted high-density electrode point flexible stylet electrode of the present invention can be applied to parkinson's syndrome, A Zihai
The clinical treatment of the silent neurological diseases such as disease and depression or the research of Neuscience.
Detailed description of the invention
Upon reading the detailed description of non-limiting embodiments with reference to the following drawings, other feature of the invention,
Objects and advantages will become more apparent upon:
Fig. 1 a is the schematic diagram of implanted high-density electrode point flexible stylet electrode in one embodiment of the present invention；
Fig. 1 b is the side schematic view of Fig. 1 a；
Label is expressed as in Fig. 1 a, Fig. 1 b: surface electrode point 1, side electrode point 2, polymer insulation layer 3；
Fig. 2 is implanted high-density electrode point flexible stylet electrode preparation flow figure in one embodiment of the present invention；
Fig. 3 a is the C-V characteristic of side electrode point in one embodiment of the present invention；
Fig. 3 b is the impedance operator of side electrode point in one embodiment of the present invention；
Fig. 4 is the topology view of 4 probe electrodes in one embodiment of the present invention；
Fig. 4 acceptance of the bid note is expressed as: 4 being probe electrode, 5 is electrode pad interface；
Fig. 5 is that implantating biological electrographic recording of the invention or electro photoluminescence flexibility high-density electrode are implanted into organism (brain)
Schematic diagram；
Fig. 5 acceptance of the bid note is expressed as: a is scalp, b is skull, c is dura mater, d is arachnoid, e is cortex, is f skin
Matter, g are white matter.
Specific embodiment
The present invention is described in detail combined with specific embodiments below.Following embodiment will be helpful to the technology of this field
Personnel further understand the present invention, but the invention is not limited in any way.It should be pointed out that the ordinary skill of this field
For personnel, without departing from the inventive concept of the premise, various modifications and improvements can be made.These belong to the present invention
Protection scope.
It is a kind of preferred embodiment of implanted high-density electrode point flexible stylet electrode referring to Fig.1 shown in a, Fig. 1 b
Structural schematic diagram, electrode include polymer insulation layer 3 and metal layer, are successively arranged to overlap 3 He of polymer insulation layer from bottom to top
Metal layer, the electrode structure that formation is made of multiple layer polymer insulating layer 3 and more metal layers, and every layer of metal layer are coated on poly-
It closes between object insulating layer 3, makes electric insulation between spaced apart metal layer；Upper surface, lower surface and the side of electrode or
Electrode points are arranged in two sides, form surface electrode point 1 and side electrode point 2 on the electrode.
In above-mentioned electrode structure, each independent cabling of electrode points is not ganged up mutually, i.e. mutually insulated between each wire,
Separated by polymer insulation layer 3.It electrode rear end can be using wired connection modes or integrated NFC cores such as welding, hot pressing
Piece, wifi bluetooth module and acquisition system are wirelessly connected the input and reading for realizing signal.
The present embodiment is further arranged to, and surface electrode point 1 is by being covered in the top layer of electrode and the polymer of the bottom
Insulating layer 3 wrap up patterned metal layer and at corresponding electrode points aperture formed；Side electrode point 2 is by by metal layer
End is exposed to be formed outside polymer insulation layer 3, stacks out highdensity electrode lattice array in the side of electrode.This electrode points
Distribution mode can stack out highdensity electrod-array in small area and realize high-density electrode, improve the sky of tracer signal
Between resolution ratio.
In other preferred embodiments, surface electrode point 1 is made of 10 μm~50 μm of diameter of circular hole.
In other preferred embodiments, every one polymer insulating layer 3 with a thickness of 1 μm -10 μm；The integral thickness of electrode is
10 μm~50 μm.
In other preferred embodiments, polymer insulation layer 3 is biological biocompatible flexible polymer material, and bio-compatible is flexible
Polymer material can select polyimides, any one in Parylene.Modulus is made relative to the lower polymer of silicon
Make electrode whole more soft for the base material of electrode, is moved with the movement of tissue, reduce the damage to tissue
And the probability of electrode itself damage.
In other preferred embodiments, metal layer is patterned metallic conductor or patterned conducting polymer, wherein
Metallic conductor can select gold, platinum, chromium, any one in titanium.Multiple layer metal conductor can be selected respectively in electrode structure
Any one in metal is stated, forms the superimposed layer of a variety of different metals in electrode structure.Conducting polymer can be received for carbon
Mitron, graphene, mixed polymer one or more kinds of in silver nanowires.
Referring to shown in Fig. 2, a kind of flow chart of the preparation method of implanted high-density electrode point flexible stylet electrode, preparation
The embodiment of method is referred to following steps progress:
As shown in S1 in Fig. 2, one layer of sacrificial layer is prepared on substrate；Substrate can be polished silicon slice or other substrates.
Sacrificial layer can be metallic aluminium, and thickness is generally higher than 200nm.Here it prepares and can be deposition, evaporation technology.
As shown in S2 in Fig. 2, spin coating and the polymer insulation layer 3 of the bottom is graphically obtained on sacrificial layer；This step
In include first cleaning sacrificial layer, after spin coating on it and graphically obtain the polymer insulation layer 3 of the bottom.
As shown in S3 in Fig. 2, successively sputtered in the polymer insulation layer 3 of the bottom or evaporate one layer of metal adhesion layers and
One layer of metal layer, metal adhesion layers and metal layer can be respectively Cr and Au, thickness be respectively 10~100nm and 200~
500nm.Spin coating positive photoresist is as exposure mask on the metal layer, by front baking, exposure, development and after dry, carved using ion beam
Erosion or wet etching, obtain patterned metal layer.
As shown in S4 in Fig. 2: spin coating and graphically descending one layer of polymeric insulating layer 3 again on patterned metal layer.
Upper spin coating and patterned metal layer as shown in S5 in Fig. 2, then in patterned polymer insulation layer 3 repeat to walk
Rapid S3, S4, polymer insulation layer 3, metal layer are arranged to overlap from bottom to top, until being stacked to the polymer insulation layer of top
3.Metal layer conductive line end it is exposed 3 outer end of polymer insulation layer formed side electrode point 2, overlayer polymer insulating layer 3 with
And aperture forms upper and lower surfaces electrode points 1 and pad interface in the way of photoetching in bottom polymer insulation layer 3.
As shown in S6 in Fig. 2: again by sacrifice layer corrosion or dissolution, completing the release of electrode.
Polymer insulation layer 3 selects non-photosensitivity type or photosensitive polyimide or colorless and transparent Parylene, thick
Degree may range from 1~50 micron, it is generally the case that and select thinner thin polymer film flexibility better, but in implantation process
In it is more difficult, and thinner film is more easily damaged, and specific thickness can regulate and control as needed.
Referring to the step of above-mentioned preparation method, in another specific embodiment, it is soft to provide a kind of implanted high-density electrode point
The detailed description of the preparation of property probe electrode, the specific steps are as follows:
S1: sheet glass is respectively put into acetone, ethyl alcohol by the substrate material using common 3 cun of circular glass pieces as electrode
It is cleaned by ultrasonic 5 minutes in deionized water, after cleaning finishes, is toasted 3 hours with being put into 180 DEG C of baking ovens after being dried with nitrogen.
S2: 5 μm of Parylene C (Parylene) are deposited using chemical gas-phase deposition system (CVD) on the glass sheet
Polymer insulation layer 3 as the bottom in electrode structure.
S3: the 5 μ m-thick positive photoresist AZ4620 of spin coating on 5 μm of Parylene C, by front baking, photoetching, development and after
It dries, obtains patterned photoresist exposure mask.The most bottom covered using oxygen plasma etch equipment etched features positive photoresist exposure mask
Layer Parylene C film, exposes the electrode spot hole of bottom, and a diameter of 10 μm.With third after graphical bottom ParyleneC
Ketone removes positive photoresist exposure mask.One layer of Cr and layer of Au are successively sputtered on graphical bottom Parylene C as metal layer, wherein
Cr with a thickness of 30nm, Au with a thickness of 300nm.5 μm of the positive glue (AZ4620) on Au layer, development, rear baking after exposure, then
Electrode points and conducting wire are formed using wet etching, 12 μm of electrode spot diameter, obtain patterned metal layer.
S4: removing positive photoresist exposure mask with acetone, identical as previous process, reuses chemical vapor deposition (CVD) in figure
On the metal layer of change deposit 5 μm of Parylene C, as next layer of polymer insulation layer 3, graphical positive photoresist and with oxygen etc. from
The graphical Parylene C film of daughter etching apparatus.
S5: successively sputtering one layer of Cr, layer of Au and graphical on graphical Parylene C film again, and polymer is exhausted
Edge layer 3, metal layer are arranged to overlap from bottom to top, until being stacked to the polymer insulation layer 3 of top, prepare multilayer Parylene
C film and metal layer are until reaching design requirement.Metal layer conductive line end is exposed to form side in 3 outer end of polymer insulation layer
Face electrode points 2, aperture is formed in the way of photoetching on overlayer polymer insulating layer 3 and bottom polymer insulation layer 3
Upper and lower surfaces electrode points 1 and pad interface.
S6: finally molding electrode is slowly torn it down from substrate of glass with tweezers.
It is special for the volt-ampere of the single side electrode point 2 of flexible stylet electrode of above-described embodiment referring to shown in Fig. 3 a, Fig. 3 b
Property and impedance operator tested, respectively as shown in Fig. 3 a, Fig. 3 b, the impedance of 1KHz has record neuroelectricity in 12K Ω
The ability of signal.
In a specific embodiment, a kind of high-density electrode point flexible stylet electrode based on photosensitive polyimide is provided
Preparation method, the preparation method is as follows:
S1: using substrate material of the common single-sided polishing silicon wafer as electrode, being respectively put into acetone for silicon wafer, ethyl alcohol with go
It is cleaned by ultrasonic 5 minutes in ionized water, is then toasted 3 hours with being put into 180 DEG C of baking ovens after being dried with nitrogen.In the silicon wafer cleaned
The aluminium of one layer of 400nm thickness of upper deposition is as sacrificial layer metal.
S2: (1000 turns 7 seconds, 1500 turn 30 spin coating photosensitive polyimide Durimide 7505 on sacrificial layer metal
Second), the polyimide layer of the electrode of 5 μ m-thicks is obtained after exposure in 6 seconds, development in 35 seconds, 350 DEG C solidify, and is obtained patterned
Polyimide layer, as the polymer insulation layer 3 of the bottom, having opening diameter in the polymer insulation layer 3 of the bottom is 10 μ
The shape of the electrode points of m, electrode entirety is determined by photo etched mask plate shape, can be adjusted according to the actual situation.
S3: 30nm chromium and 300nm gold are successively sputtered in the polymer insulation layer 3 of the bottom, forms metal layer.In metal
5 μ m-thick positive photoresist AZ4620 of spin coating on layer, by front baking, photoetching, development and after dry, obtain patterned photoresist and cover
Film.Being covered using ion beam etching or wet etching by metallic layer graphic and with acetone removal positive photoresist after will be graphical
Film obtains patterned metal layer, forms lower surface electrode point and corresponding conducting wire in this step, wherein each metal electricity
The size of pole is 12 μm, and covers the diameter of a upper layer pattern as the aperture on 10 μm of polyimides.
S4: spin coating photosensitive polyimide and exposure development obtain 5 μ m-thicks after solidifying again on patterned metal layer
Polyimide layer, as next layer of polymer insulation layer 3, so that the patterned metal layer prepares the gold of preparation with next layer
Belong to layer to keep apart.
S5: according to the preparation process of above polymer insulation layer 3 and metal layer, by polymer insulation layer 3, metal layer under
To being above arranged to overlap, until being stacked to the polymer insulation layer 3 of top, multiple layer polymer insulating layer 3 and multiple layer metal are prepared
Layer is until reach design requirement.Every layer of metal layer conductive line end is exposed to form side electrode point 2 in 3 outer end of polymer insulation layer,
Aperture forms upper and lower surfaces electricity in the way of photoetching on overlayer polymer insulating layer 3 and bottom polymer insulation layer 3
Pole 1 and pad interface.
S6: electrode is discharged using electrochemistry or dilute hydrochloric acid corrosion aluminum sacrificial layer.
In terms of third, the present embodiment also provides a kind of biological electrographic recording or electric stimulation electrode, including implanted high density
Electrode points flexible stylet electrode.
It can also be with for Single probe type electrode for the implanted high density flexible electrode of biological electrographic recording or electro photoluminescence
It is 4 probe array formula electrodes referring to shown in Fig. 4 for multiprobe array-type electrode.It can be set according to actual needs in practical application
The quantity and corresponding size of meter electrode points and probe and position.It is soft in the implanted high density of biological electrographic recording or electro photoluminescence
Property electrode application in contain the entirety of probe electrode using polymer flexible as base material, the pad of electrode rear end
The switchable other hard converting interface such as PCB of interface, silicon substrate connector etc..Referring to Figure 5, by biological electrographic recording or electro photoluminescence electricity
In pole, including implanted high-density electrode point flexible stylet electrode implantation organism (brain).
Specific embodiments of the present invention are described above.It is to be appreciated that the invention is not limited to above-mentioned
Particular implementation, those skilled in the art can make various deformations or amendments within the scope of the claims, this not shadow
Ring substantive content of the invention.
Claims (10)
1. a kind of implanted high-density electrode point flexible stylet electrode, it is characterised in that: the electrode includes polymer insulation layer
And metal layer, the polymer insulation layer and the metal layer are successively arranged to overlap from bottom to top, are formed and are polymerize as described in multilayer
The electrode structure that metal layer described in object insulating layer and multilayer is constituted, and every layer of metal layer is coated on the polymer insulation layer
Between, make electric insulation between the spaced apart metal layer；
Electrode points are arranged in upper surface, lower surface and the one or both sides face of the electrode, form surface electricity on the electrodes
Pole and side electrode point.
2. a kind of implanted high-density electrode point flexible stylet electrode according to claim 1, which is characterized in that the table
Face electrode points are by being covered in the top layer of the electrode and the patterned gold of polymer insulation layer package of the bottom
Belong to layer and at corresponding electrode points aperture formed.
3. a kind of implanted high-density electrode point flexible stylet electrode according to claim 1, which is characterized in that the side
Face electrode points are by being formed outside the polymer insulation layer by the metal layer end is exposed, in the side heap of the electrode
Folded electrode lattice array out.
4. a kind of implanted high-density electrode point flexible stylet electrode described in any one of -3 according to claim 1, special
Sign is that the polymer insulation layer is biological biocompatible flexible polymer material.
5. a kind of implanted high-density electrode point flexible stylet electrode according to claim 4, which is characterized in that the life
Any one in object biocompatible flexible polymer material selection polyimides, Parylene.
6. a kind of implanted high-density electrode point flexible stylet electrode described in any one of -3 according to claim 1, special
Sign is: every layer of polymer insulation layer with a thickness of 1 μm~10 μm.
7. a kind of implanted high-density electrode point flexible stylet electrode according to claim 1 to 3, it is characterised in that: described
The integral thickness of electrode is 10 μm~50 μm.
8. a kind of implanted high-density electrode point flexible stylet electrode according to claim 1, which is characterized in that the gold
Belonging to layer is patterned metallic conductor or patterned conducting polymer, wherein the metallic conductor is gold, in platinum, chromium, titanium
Any one；The conducting polymer is carbon nanotube, graphene, mixed polymerization one or more kinds of in silver nanowires
Object.
9. a kind of preparation method of the described in any item implanted high-density electrode point flexible stylet electrodes of claim 1-8,
It is characterized in that: including:
On substrate spin coating or deposition bottom polymer insulation layer and using photoetching process it is graphical；
One layer of metal adhesion layers and one layer of metal are successively sputtered or evaporated in the patterned bottom polymer insulation layer
Layer, spin coating positive photoresist is as exposure mask on the metal layer, by front baking, exposure, development and after dry, carved using ion beam
Erosion or wet etching, obtain patterned metal layer；
Spin coating and one layer of polymeric insulating layer is graphically descended again on the patterned metal layer；
Spin coating and graphical next layer of metal layer on the graphically lower one layer of polymeric insulating layer again, the polymer is exhausted
Edge layer, the metal layer are arranged to overlap from bottom to top, until being stacked to the polymer insulation layer of top；Every layer of gold
The wire end of category layer is exposed to form side electrode point in the polymer insulation layer outer end, exhausted in the polymer of top
Aperture forms upper and lower surfaces electrode points and weldering in the way of photoetching in edge layer and the polymer insulation layer of the bottom
Disk interface.
10. a kind of biology electrographic recording or electric stimulation electrode, it is characterised in that: including plant of any of claims 1-5
Enter formula high-density electrode point flexible stylet electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910537043.6A CN110327544B (en) | 2019-06-20 | 2019-06-20 | Implanted high-density electrode point flexible probe electrode and preparation method thereof |
Applications Claiming Priority (1)
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112244848A (en) * | 2020-09-29 | 2021-01-22 | 哈尔滨工业大学 | Preparation method of multichannel MEAs based on cortical electroencephalogram |
| CN113057640A (en) * | 2021-03-15 | 2021-07-02 | 四川省人民医院 | Implanted microneedle electrode, preparation method and functional instrument chip system |
| CN113855034A (en) * | 2021-09-10 | 2021-12-31 | 北京大学 | Microneedle electrode and method for producing same |
| CN114014252A (en) * | 2021-11-02 | 2022-02-08 | 杭州电子科技大学温州研究院有限公司 | High-density low-noise rigid-flexible combined nerve probe and preparation method thereof |
| CN116099125A (en) * | 2023-02-15 | 2023-05-12 | 微智医疗器械有限公司 | Electrode structure of electric stimulator and electric stimulator |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101073687A (en) * | 2007-05-18 | 2007-11-21 | 中国科学院上海微系统与信息技术研究所 | High-purity implanting planar array microelectrode and its production |
| US7326649B2 (en) * | 2004-05-14 | 2008-02-05 | University Of Southern California | Parylene-based flexible multi-electrode arrays for neuronal stimulation and recording and methods for manufacturing the same |
| CN101172185A (en) * | 2007-09-21 | 2008-05-07 | 中国科学院上海微系统与信息技术研究所 | Process for producing implantation type two-sided flexible tiny array electrode |
| CN101622029A (en) * | 2007-03-02 | 2010-01-06 | 皇家飞利浦电子股份有限公司 | Electrode system for deep brain stimulation |
| CN102215905A (en) * | 2008-11-14 | 2011-10-12 | 皇家飞利浦电子股份有限公司 | An implantable medical system |
| CN105214214A (en) * | 2015-10-26 | 2016-01-06 | 温州生物材料与工程研究所 | A kind of nerve stimulator and preparation method thereof |
| CN106073771A (en) * | 2016-06-29 | 2016-11-09 | 中国科学院上海微系统与信息技术研究所 | A kind of customizable various dimensions high density flexible brain electrode and preparation method thereof |
| CN106456038A (en) * | 2014-05-28 | 2017-02-22 | 皇家飞利浦有限公司 | Method of manufacturing a flexible conductive track arrangement, flexible conductive track arrangement and neurostimulation system |
| CN108175937A (en) * | 2017-12-26 | 2018-06-19 | 深圳先进技术研究院 | A kind of linking probe, preparation method and the purposes in microelectrode array connection |
-
2019
- 2019-06-20 CN CN201910537043.6A patent/CN110327544B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7326649B2 (en) * | 2004-05-14 | 2008-02-05 | University Of Southern California | Parylene-based flexible multi-electrode arrays for neuronal stimulation and recording and methods for manufacturing the same |
| CN101622029A (en) * | 2007-03-02 | 2010-01-06 | 皇家飞利浦电子股份有限公司 | Electrode system for deep brain stimulation |
| CN101073687A (en) * | 2007-05-18 | 2007-11-21 | 中国科学院上海微系统与信息技术研究所 | High-purity implanting planar array microelectrode and its production |
| CN101172185A (en) * | 2007-09-21 | 2008-05-07 | 中国科学院上海微系统与信息技术研究所 | Process for producing implantation type two-sided flexible tiny array electrode |
| CN102215905A (en) * | 2008-11-14 | 2011-10-12 | 皇家飞利浦电子股份有限公司 | An implantable medical system |
| CN106456038A (en) * | 2014-05-28 | 2017-02-22 | 皇家飞利浦有限公司 | Method of manufacturing a flexible conductive track arrangement, flexible conductive track arrangement and neurostimulation system |
| CN105214214A (en) * | 2015-10-26 | 2016-01-06 | 温州生物材料与工程研究所 | A kind of nerve stimulator and preparation method thereof |
| CN106073771A (en) * | 2016-06-29 | 2016-11-09 | 中国科学院上海微系统与信息技术研究所 | A kind of customizable various dimensions high density flexible brain electrode and preparation method thereof |
| CN108175937A (en) * | 2017-12-26 | 2018-06-19 | 深圳先进技术研究院 | A kind of linking probe, preparation method and the purposes in microelectrode array connection |
Non-Patent Citations (2)
| Title |
|---|
| JI, BOWEN ET AL.: "Flexible bioelectrodes with enhanced wrinkle microstructures for reliable electrochemical modification and neuromodulation in vivo", 《BIOSENSORS & BIOELECTRONICS》 * |
| 包步峰: "面向人工耳蜗的柔性生物微电极稳定性研究", 《微电子学》 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112244848A (en) * | 2020-09-29 | 2021-01-22 | 哈尔滨工业大学 | Preparation method of multichannel MEAs based on cortical electroencephalogram |
| CN112244848B (en) * | 2020-09-29 | 2023-11-28 | 哈尔滨工业大学 | Preparation method of multichannel MEAs (membrane-associated systems) based on cortex electroencephalogram |
| CN113057640A (en) * | 2021-03-15 | 2021-07-02 | 四川省人民医院 | Implanted microneedle electrode, preparation method and functional instrument chip system |
| CN113855034A (en) * | 2021-09-10 | 2021-12-31 | 北京大学 | Microneedle electrode and method for producing same |
| CN114014252A (en) * | 2021-11-02 | 2022-02-08 | 杭州电子科技大学温州研究院有限公司 | High-density low-noise rigid-flexible combined nerve probe and preparation method thereof |
| CN116099125A (en) * | 2023-02-15 | 2023-05-12 | 微智医疗器械有限公司 | Electrode structure of electric stimulator and electric stimulator |
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