CN110324013A - Compensate the method, device and equipment of long-term memory effect - Google Patents
Compensate the method, device and equipment of long-term memory effect Download PDFInfo
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- 230000007787 long-term memory Effects 0.000 title claims abstract description 77
- 230000000694 effects Effects 0.000 title claims abstract description 59
- 238000000034 method Methods 0.000 title claims abstract description 52
- 239000011159 matrix material Substances 0.000 claims abstract description 25
- 230000015654 memory Effects 0.000 claims description 52
- 230000006870 function Effects 0.000 claims description 19
- 238000003860 storage Methods 0.000 claims description 16
- 238000005070 sampling Methods 0.000 claims description 10
- 230000005611 electricity Effects 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 17
- 238000005516 engineering process Methods 0.000 description 11
- 230000001360 synchronised effect Effects 0.000 description 9
- 238000004590 computer program Methods 0.000 description 8
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 7
- 230000005291 magnetic effect Effects 0.000 description 7
- 229910002601 GaN Inorganic materials 0.000 description 6
- 238000010295 mobile communication Methods 0.000 description 6
- 230000003068 static effect Effects 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003446 memory effect Effects 0.000 description 1
- VIKNJXKGJWUCNN-XGXHKTLJSA-N norethisterone Chemical compound O=C1CC[C@@H]2[C@H]3CC[C@](C)([C@](CC4)(O)C#C)[C@@H]4[C@@H]3CCC2=C1 VIKNJXKGJWUCNN-XGXHKTLJSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
- H03F3/1935—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices with junction-FET devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
- H03F1/3241—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
- H04B1/0475—Circuits with means for limiting noise, interference or distortion
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04W—WIRELESS COMMUNICATION NETWORKS
- H04W52/00—Power management, e.g. TPC [Transmission Power Control], power saving or power classes
- H04W52/02—Power saving arrangements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2201/00—Indexing scheme relating to details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements covered by H03F1/00
- H03F2201/32—Indexing scheme relating to modifications of amplifiers to reduce non-linear distortion
- H03F2201/3209—Indexing scheme relating to modifications of amplifiers to reduce non-linear distortion the amplifier comprising means for compensating memory effects
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2201/00—Indexing scheme relating to details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements covered by H03F1/00
- H03F2201/32—Indexing scheme relating to modifications of amplifiers to reduce non-linear distortion
- H03F2201/3224—Predistortion being done for compensating memory effects
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
- H04B2001/0408—Circuits with power amplifiers
- H04B2001/0425—Circuits with power amplifiers with linearisation using predistortion
Abstract
The invention discloses it is a kind of compensate long-term memory effect method, comprising: obtain baseband signal short-time rating and it is long when power；According to short-time rating, it is long when power and predetermined threshold range, obtain current working status indication signal；According to current working status indication signal and parameter information, index address is obtained；Functional value corresponding with index address is obtained in default matrix look-up table；According to the baseband signal after functional value compensation delay, compensated baseband signal is obtained.The present invention also discloses a kind of devices and equipment for compensating long-term memory effect.
Description
Technical field
The present invention relates to field of communication technology more particularly to a kind of method, device and equipments for compensating long-term memory effect.
Background technique
Gallium nitride (GaN) power amplifier is since its is high-efficient, power density is big and with wide advantage, is answered extensively
For in the base station of the communications field；But GaN power amplifier is since device material reason is there are distinctive electronics capture characteristic,
For GaN power amplifier under the impulse of a cycle pulse signal, the phenomenon that slowly reducing is presented in quiescent current, here it is
The electronics capture characteristic of GaN power amplifier, this characteristic generally can just be settled out at several milliseconds, and this characteristic can make function
The non-linear distortion of rate amplifier shows a kind of long-term memory effect, and the long-term memory effect of GaN power amplifier will lead to
Distortion shows a millisecond level characteristics, and traditional digital pre-distortion technology can only correcting power amplifier nanosecond distortion, nothing
Method corrects Millisecond distortion, thereby reduces the wireless radio frequency index of base station.
Summary of the invention
In view of this, an embodiment of the present invention is intended to provide a kind of method, device and equipment for compensating long-term memory effect, energy
It is enough that the trapped electron effect of amplifier is quickly corrected, that is, it realizes and the long-term memory effect of power amplifier is carried out in fact
When compensate, can correct Millisecond distortion, Millisecond problem of dtmf distortion DTMF can not be compensated by overcoming traditional pre-distortion technology, improve base
The wireless radio frequency index stood.
In order to achieve the above objectives, the technical scheme of the present invention is realized as follows:
The embodiment of the invention provides a kind of methods for compensating long-term memory effect, which comprises
Obtain baseband signal short-time rating and it is long when power；
According to the short-time rating, it is described long when power and predetermined threshold range, obtain current working status indication letter
Number；
According to current the working status indication signal and parameter information, index address is obtained；
Functional value corresponding with the index address is obtained in default matrix look-up table；
According to the baseband signal after functional value compensation delay, the compensated baseband signal is obtained.
In the above scheme, it is described obtain baseband signal short-time rating and it is long when power before, the method is also wrapped
It includes:
It is trained, is obtained in difference under different voltage, temperature and power condition using single-tone and/or multi-tone signal
Voltage, temperature, the long-term memory characterisitic parameter under power condition；The length under different voltage, temperature, power condition
When memory characteristic parameter be multidimensional function；
The default square is formed according to the long-term memory characterisitic parameter under different voltage, temperature, power condition
Battle array look-up table.
In the above scheme, it is described according to the short-time rating, it is described long when power and predetermined threshold range, obtain current
Working status indication signal, comprising:
The power when short-time rating is subtracted described long, obtains difference；
When the difference is greater than the first predetermined threshold value, determine the current working status indication signal for charging shape
State indication signal；
When the difference is less than the second predetermined threshold value, determine the current working status indication signal for electric discharge shape
State indication signal；
When the difference is less than or equal to the first predetermined threshold value, is greater than or equal to the second predetermined threshold value, institute is determined
Stating current working status indication signal is hold mode indication signal；
Wherein, the predetermined threshold range is made of first predetermined threshold value and second predetermined threshold value,
First predetermined threshold value is greater than second predetermined threshold value.
In the above scheme, the baseband signal after the compensation delay according to the functional value, obtains compensated
The baseband signal, comprising:
The functional value is multiplied with the baseband signal after the delay, obtains the compensated base band letter
Number.
In the above scheme, it is described obtain baseband signal short-time rating and it is long when power, comprising:
Obtain respectively according to the following formula the baseband signal short-time rating and it is long when power,
Wherein, the PowS (n) is the short-time rating, and power when the PowL (n) is described long, the n is described
The sampling sequence number of baseband signal, the x (i) are the baseband signal, and the N is that short time-window is long, and window is long when the M is long, institute
Stating λ is memory fact.
In the above scheme, the parameter information, comprising: voltage, temperature, mean power and instantaneous power.
The embodiment of the invention provides a kind of device for compensating long-term memory effect, described device includes:
Obtain module, for obtain baseband signal short-time rating and it is long when power；
First processing module, for according to the short-time rating, it is described long when power and predetermined threshold range, obtain current
Working status indication signal；
Second processing module, for obtaining index ground according to current the working status indication signal and parameter information
Location；
Searching module, for obtaining functional value corresponding with the index address in default matrix look-up table；
Compensating module, for obtaining compensated described according to the baseband signal after functional value compensation delay
Baseband signal.
In above-mentioned apparatus, described device further include:
Training module, for being instructed under different voltage, temperature and power condition using single-tone and/or multi-tone signal
Practice, obtains the long-term memory characterisitic parameter under different voltage, temperature, power condition；It is described different voltage, temperature,
Long-term memory characterisitic parameter under power condition is multidimensional function；According to described under different voltage, temperature, power condition
Long-term memory characterisitic parameter forms the default matrix look-up table.
In above-mentioned apparatus, the first processing module, power when specifically for the short-time rating being subtracted described long,
Obtain difference；When the difference is greater than the first predetermined threshold value, determine the current working status indication signal for charging
Condition indicative signal；When the difference is less than the second predetermined threshold value, determine that the current working status indication signal is
Discharge condition indication signal；It is less than or equal to the first predetermined threshold value, more than or equal to the second predetermined threshold value in the difference
When, determine that the current working status indication signal is hold mode indication signal；Wherein, the predetermined threshold range be by
First predetermined threshold value and second predetermined threshold value are constituted, and it is default that first predetermined threshold value is greater than described second
Threshold value.
In above-mentioned apparatus, the compensating module, specifically for by the base band after the functional value and the delay
Signal multiplication obtains the compensated baseband signal.
In above-mentioned apparatus, the acquisition module, specifically for obtaining the baseband signal respectively according to the following formula
Short-time rating and it is long when power,
Wherein, the PowS (n) is the short-time rating, and power when the PowL (n) is described long, the n is described
The sampling sequence number of baseband signal, the x (i) are the baseband signal, and the N is that short time-window is long, and window is long when the M is long, institute
Stating λ is memory fact.
In above-mentioned apparatus, the parameter information, comprising: voltage, temperature, mean power and instantaneous power.
The embodiment of the invention provides a kind of equipment for compensating long-term memory effect, and the equipment includes: interface, bus,
Memory, with processor, the interface, memory are connected with processor by the bus, and the memory is for storing
Executable program, the processor is configured to running the executable program realizes following steps:
Obtain baseband signal short-time rating and it is long when power；
According to the short-time rating, it is described long when power and predetermined threshold range, obtain current working status indication letter
Number；
According to current the working status indication signal and parameter information, index address is obtained；
Functional value corresponding with the index address is obtained in default matrix look-up table；
According to the baseband signal after functional value compensation delay, the compensated baseband signal is obtained.
In above equipment, the processor is additionally configured to run the executable program realization following steps:
It is trained, is obtained in difference under different voltage, temperature and power condition using single-tone and/or multi-tone signal
Voltage, temperature, the long-term memory characterisitic parameter under power condition；The length under different voltage, temperature, power condition
When memory characteristic parameter be multidimensional function；
The default square is formed according to the long-term memory characterisitic parameter under different voltage, temperature, power condition
Battle array look-up table.
In above equipment, the processor is configured to running the executable program is implemented as follows step:
The power when short-time rating is subtracted described long, obtains difference；
When the difference is greater than the first predetermined threshold value, determine the current working status indication signal for charging shape
State indication signal；
When the difference is less than the second predetermined threshold value, determine the current working status indication signal for electric discharge shape
State indication signal；
When the difference is less than or equal to the first predetermined threshold value, is greater than or equal to the second predetermined threshold value, institute is determined
Stating current working status indication signal is hold mode indication signal；
Wherein, the predetermined threshold range is made of first predetermined threshold value and second predetermined threshold value,
First predetermined threshold value is greater than second predetermined threshold value.
In above equipment, the processor is configured to running the executable program is implemented as follows step:
The functional value is multiplied with the baseband signal after the delay, obtains the compensated base band letter
Number.
In above equipment, the processor is configured to running the executable program is implemented as follows step:
Obtain respectively according to the following formula the baseband signal short-time rating and it is long when power,
Wherein, the PowS (n) is the short-time rating, and power when the PowL (n) is described long, the n is described
The sampling sequence number of baseband signal, the x (i) are the baseband signal, and the N is that short time-window is long, and window is long when the M is long, institute
Stating λ is memory fact.
In above equipment, the parameter information, comprising: voltage, temperature, mean power and instantaneous power.
The embodiment of the invention provides a kind of computer readable storage medium, the computer-readable recording medium storage has
The step of program, described program can be executed by processor, method to realize the compensation long-term memory effect.
The method, device and equipment of compensation long-term memory effect provided by the invention, by obtaining baseband signal in short-term
Power and it is long when power；According to short-time rating, it is long when power and predetermined threshold range, obtain current working status indication letter
Number；According to current working status indication signal and parameter information, index address is obtained；Obtained in default matrix look-up table with
The corresponding functional value of index address；According to the baseband signal after functional value compensation delay, compensated baseband signal is obtained；It can
The trapped electron effect of amplifier is quickly corrected, that is, realizes and the long-term memory effect of power amplifier is carried out in real time
Compensation can correct Millisecond distortion, and Millisecond problem of dtmf distortion DTMF can not be compensated by overcoming traditional pre-distortion technology, improve base station
Wireless radio frequency index.
Detailed description of the invention
Fig. 1 is the flow chart of the embodiment of the method one of present invention compensation long-term memory effect；
Fig. 2 is the flow chart of the embodiment of the method two of present invention compensation long-term memory effect；
Fig. 3 is the embodiment of the method two of the invention for compensating long-term memory effect settled preceding working status indication signal really
Schematic diagram；
Fig. 4 obtains the schematic diagram of functional value for the embodiment of the method two of the invention for compensating long-term memory effect；
Fig. 5 is the signal of the compensated baseband signal of output of the embodiment of the method two of present invention compensation long-term memory effect
Figure；
Fig. 6 is that the method for present invention compensation long-term memory effect applies the schematic diagram on the power amplifier of the base station 4G；
Fig. 7 is the structural schematic diagram of the Installation practice of present invention compensation long-term memory effect；
Fig. 8 is the structural schematic diagram of the apparatus embodiments of present invention compensation long-term memory effect.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description.
Fig. 1 is the flow chart of the embodiment of the method one of present invention compensation long-term memory effect, as shown in Figure 1, the present invention is real
The method for applying the compensation long-term memory effect of example offer can be applied (hereinafter referred to as to be filled in the device of compensation long-term memory effect
Set) on, this method may include steps of:
Step 101, obtain baseband signal short-time rating and it is long when power.
Device obtain in real time baseband signal short-time rating and it is long when power；Wherein, baseband signal can be mobile communication
Baseband signal in (Mobile Communications, MC) technology, which includes but is not limited to Generation Mobile Telecommunication System
Technology (2-Generation, 2G), 3rd generation mobile communication technology (3rd-Generation, 3G), forth generation mobile communication skill
The mobile communication of art (4th-Generation, 4G), the 5th third-generation mobile communication technology (5th-Generation, 5G) and future
Technology.
Step 102, according to short-time rating, it is long when power and predetermined threshold range, obtain current working status indication letter
Number.
Device according to get short-time rating, it is long when power and pre-set predetermined threshold range, obtain current
Working status indication signal；Wherein, predetermined threshold range can be configured according to actual needs, without restriction herein.
Step 103, according to current working status indication signal and parameter information, obtain index address.
Device obtains an index address according to current working status indication signal and parameter information.
Step 104 obtains functional value corresponding with index address in default matrix look-up table.
Device obtains a functional value corresponding with index address in pre-set default matrix look-up table.
Step 105 compensates the baseband signal after delay according to functional value, obtains compensated baseband signal.
Device compensates the baseband signal after delay in the functional value according to obtained in step 104, final
To compensated baseband signal.
It is provided in an embodiment of the present invention compensation long-term memory effect method, by obtain baseband signal short-time rating and
Power when long；According to short-time rating, it is long when power and predetermined threshold range, obtain current working status indication signal；According to
Current working status indication signal and parameter information, obtain index address；It is obtained in default matrix look-up table and index ground
The corresponding functional value in location；According to the baseband signal after functional value compensation delay, compensated baseband signal is obtained；It can be to amplification
The trapped electron effect of device is quickly corrected, that is, is realized and carried out real-time compensation to the long-term memory effect of power amplifier,
Millisecond distortion can be corrected, Millisecond problem of dtmf distortion DTMF can not be compensated by overcoming traditional pre-distortion technology, improve the nothing of base station
Line RF index.
It is on the basis of the above embodiments, further to illustrate in order to more embody the purpose of the present invention.
Fig. 2 is the flow chart of the embodiment of the method two of present invention compensation long-term memory effect, as shown in Fig. 2, the present invention is real
The method for applying the compensation long-term memory effect of example offer applies the dress in the compensation long-term memory effect for GaN power amplifier
It sets on (hereinafter referred to as device), this method may include steps of:
Step 201 is trained under different voltage, temperature and power condition using single-tone and/or multi-tone signal, is obtained
To the long-term memory characterisitic parameter under different voltage, temperature, power condition.
Device is using single-tone and/or multi-tone signal for GaN power amplifier in different voltage, temperature and power condition
Under be trained, obtain the long-term memory characterisitic parameter under different voltage, temperature, power condition, which is multidimensional letter
Number.
Wherein, voltage, temperature and power condition can be configured according to actual needs, without restriction herein.
Step 202 forms default square according to the long-term memory characterisitic parameter under different voltage, temperature, power condition
Battle array look-up table.
Device is by the long-term memory characterisitic parameter shape obtained in step 201 under different voltage, temperature, power condition
At a default matrix look-up table.
Step 203 postpones baseband signal, the baseband signal after being postponed.
Device postpones the baseband signal of input, the baseband signal after being postponed；Wherein, specific delay parameter
It can be configured according to actual needs, it is without restriction herein.
Step 204, obtain baseband signal short-time rating and it is long when power.
Device obtain baseband signal short-time rating and it is long when power；Wherein it is possible to using but be not limited to such as under type pair
The short-time rating of baseband signal and it is long when power obtained, according to formula
Obtain baseband signal short-time rating and it is long when power, wherein PowS (n) be short-time rating, PowL (n) be it is long when
Power, n be baseband signal sampling sequence number, x (i) be baseband signal, N be short time-window it is long, M be it is long when window it is long, λ be memory because
Son.
Step 205, according to short-time rating, it is long when power and predetermined threshold range, obtain current working status indication letter
Number.
Specifically, power when short-time rating is first subtracted long by device, obtains difference, further according to difference and predetermined threshold range
Relationship determine to obtain current working status indication signal；Wherein, predetermined threshold range be by the first predetermined threshold value with
Second predetermined threshold value is constituted, and the first predetermined threshold value is greater than the second predetermined threshold value；Specific predetermined threshold value can basis
Actual demand setting, not in this to go forth.
When difference is greater than the first predetermined threshold value, determine that current working status indication signal is charged state instruction letter
Number；
When difference is less than the second predetermined threshold value, determine that current working status indication signal is discharge condition instruction letter
Number；
When difference is less than or equal to the first predetermined threshold value, is greater than or equal to the second predetermined threshold value, determine currently
Working status indication signal is hold mode indication signal.
Fig. 3 is the embodiment of the method two of the invention for compensating long-term memory effect settled preceding working status indication signal really
Schematic diagram obtain current working status indication signal as shown in figure 3, judgement comparison can be carried out using following formula.
Wherein, Sta represents current working status indication signal, and ChargeStatus represents charged state indication signal,
DisChargeStatus represents discharge condition indication signal, and HoldStatus represents hold mode indication signal, and TH1 represents
One predetermined threshold value, TH0 represent the second predetermined threshold value.
Step 206, according to current working status indication signal and parameter information, obtain index address.
Device obtains a height according to the current working status indication signal and parameter information determined in step 205
Tie up index functions address；Wherein, parameter information includes: voltage, temperature, mean power and instantaneous power.
Step 207 obtains functional value corresponding with index address in default matrix look-up table.
Device finds functional value corresponding with the index address in step 206, the function in default matrix look-up table
Value is Multidimensional nonlinear function value.
Fig. 4 obtains the schematic diagram of functional value for the embodiment of the method two of the invention for compensating long-term memory effect, such as Fig. 4 institute
Show, device obtains a higher-dimension letter according to current working status indication signal, voltage, temperature, mean power and instantaneous power
Number index address；Later, multidimensional nonlinear letter corresponding with the Multidimensional nonlinear function value is found in default matrix look-up table
Numerical value.
Functional value is multiplied by step 208 with the baseband signal after delay, obtains compensated baseband signal.
Fig. 5 is the signal of the compensated baseband signal of output of the embodiment of the method two of present invention compensation long-term memory effect
Figure obtains compensated base band letter as shown in figure 5, Multidimensional nonlinear function value is multiplied by device with the baseband signal after delay
Number；For example, compensated baseband signal is calculated according to formula y (n)=x (n) * f (n), wherein y (n) is compensated base
Band signal, x'(n) be delay after baseband signal, f (n) be multidimensional function look-up table output valve.
The method of compensation long-term memory effect provided in an embodiment of the present invention, exists by using single-tone and/or multi-tone signal
It is trained under different voltage, temperature and power condition, obtains note when long under different voltage, temperature, power condition
Recall characterisitic parameter；Default matrix is formed according to the long-term memory characterisitic parameter under different voltage, temperature, power condition to search
Table；Baseband signal is postponed, the baseband signal after being postponed；Obtain baseband signal short-time rating and it is long when power；
According to short-time rating, it is long when power and predetermined threshold range, obtain current working status indication signal；According to current work
Condition indicative signal and parameter information, obtain index address；Letter corresponding with index address is obtained in default matrix look-up table
Numerical value；Functional value is multiplied with the baseband signal after delay, obtains compensated baseband signal；The electronics of amplifier can be caught
It obtains effect quickly to be corrected, that is, realizes and real-time compensation is carried out to the long-term memory effect of power amplifier, milli can be corrected
Second grade distortion, Millisecond problem of dtmf distortion DTMF can not be compensated by overcoming traditional pre-distortion technology, improve the wireless radio frequency index of base station,
Especially face power leakage ratio and error vector magnitude.
In order to more embody the purpose of the present invention, on the basis of the above embodiments, further come with scene embodiment
It illustrates.
Fig. 6 is that the method for present invention compensation long-term memory effect applies the schematic diagram on the power amplifier of the base station 4G,
As shown in fig. 6, the power amplifier of the base station 4G specifically includes that long term evolution (Long Term Evolution, LTE) base band is believed
Number input module, peak clipping (Crest Factor Reduction, CFR)/digital pre-distortion (Digital Pre-
Distortion, DPD) module, compensation long-term memory effect module, digital-to-analogue conversion (Digital to analog
Converter, DAC) module, radio-frequency channel and high efficiency power amplifier module；It is sequentially connected between them.
Wherein, LTE baseband signal input module generates LTE baseband signal；CFR/DPD module is for carrying out power amplifier
Nonlinear distortion compensation in short-term；Compensate the length that long-term memory effect module is used to carry out LTE baseband signal power amplifier
When memory effect compensate, specifically may refer to the description of above-described embodiment, not in this to go forth；DAC module will be for that will mend
LTE baseband signal after repaying by digitize be transformed into it is simulated；Radio-frequency channel and high efficiency power amplifier module will be for that will simulate
Compensated LTE baseband signal carry out power amplification after be sent to antenna and launched with electromagnetic wave；It is final to realize to LTE
The long-term memory effect compensating of baseband signal progress power amplifier.
Fig. 7 is the structural schematic diagram of the Installation practice of present invention compensation long-term memory effect, as shown in fig. 7, of the invention
The device 07 for the compensation long-term memory effect that embodiment provides, comprising:
Obtain module 71, for obtain baseband signal short-time rating and it is long when power；
First processing module 72, for according to the short-time rating, it is described long when power and predetermined threshold range, worked as
Preceding working status indication signal；
Second processing module 73, for being indexed according to current the working status indication signal and parameter information
Address；
Searching module 74, for obtaining functional value corresponding with the index address in default matrix look-up table；
Compensating module 75, for obtaining compensated institute according to the baseband signal after functional value compensation delay
State baseband signal.
Further, described device further include:
Training module 76, for being carried out under different voltage, temperature and power condition using single-tone and/or multi-tone signal
Training, obtains the long-term memory characterisitic parameter under different voltage, temperature, power condition；It is described in different voltage, temperature
Long-term memory characterisitic parameter under degree, power condition is multidimensional function；According to described in different voltage, temperature, power condition
Under long-term memory characterisitic parameter form the default matrix look-up table.
Further, the first processing module 72, power when specifically for the short-time rating being subtracted described long obtain
To difference；When the difference is greater than the first predetermined threshold value, determine the current working status indication signal for charging shape
State indication signal；When the difference is less than the second predetermined threshold value, determine that the current working status indication signal is to put
Electricity condition indication signal；When the difference is less than or equal to the first predetermined threshold value, is greater than or equal to the second predetermined threshold value,
Determine that the current working status indication signal is hold mode indication signal；Wherein, the predetermined threshold range is by institute
It states the first predetermined threshold value and second predetermined threshold value is constituted, first predetermined threshold value is greater than the described second pre- gating
Limit value.
Further, the compensating module 75, specifically for believing the base band after the functional value and the delay
Number be multiplied, obtain the compensated baseband signal.
Further, the acquisition module 71, specifically for obtaining the short of the baseband signal respectively according to the following formula
When power and it is long when power,
Wherein, the PowS (n) is the short-time rating, and power when the PowL (n) is described long, the n is described
The sampling sequence number of baseband signal, the x (i) are the baseband signal, and the N is that short time-window is long, and window is long when the M is long, institute
Stating λ is memory fact.
Further, the parameter information, comprising: voltage, temperature, mean power and instantaneous power.
The device of the present embodiment, can be used for executing it is above-mentioned shown in embodiment of the method technical solution, realization principle and
Technical effect is similar, and details are not described herein again.
Fig. 8 is the structural schematic diagram of the apparatus embodiments of present invention compensation long-term memory effect, as shown in figure 8, of the invention
The equipment 08 for the compensation long-term memory effect that embodiment provides includes: interface 81, bus 82, memory 83, with processor 84, institute
It states interface 81, memory 83 to be connected with processor 84 by the bus 82, the memory 83 is for storing executable journey
Sequence, the processor 84 are configured as running the executable program realization following steps:
Obtain baseband signal short-time rating and it is long when power；
According to the short-time rating, it is described long when power and predetermined threshold range, obtain current working status indication letter
Number；
According to current the working status indication signal and parameter information, index address is obtained；
Functional value corresponding with the index address is obtained in default matrix look-up table；
According to the baseband signal after functional value compensation delay, the compensated baseband signal is obtained.
Further, the processor 84 is additionally configured to run the executable program realization following steps:
It is trained, is obtained in difference under different voltage, temperature and power condition using single-tone and/or multi-tone signal
Voltage, temperature, the long-term memory characterisitic parameter under power condition；The length under different voltage, temperature, power condition
When memory characteristic parameter be multidimensional function；
The default square is formed according to the long-term memory characterisitic parameter under different voltage, temperature, power condition
Battle array look-up table.
Further, the processor 84, which is configured as running the executable program, is implemented as follows step:
The power when short-time rating is subtracted described long, obtains difference；
When the difference is greater than the first predetermined threshold value, determine the current working status indication signal for charging shape
State indication signal；
When the difference is less than the second predetermined threshold value, determine the current working status indication signal for electric discharge shape
State indication signal；
When the difference is less than or equal to the first predetermined threshold value, is greater than or equal to the second predetermined threshold value, institute is determined
Stating current working status indication signal is hold mode indication signal；
Wherein, the predetermined threshold range is made of first predetermined threshold value and second predetermined threshold value,
First predetermined threshold value is greater than second predetermined threshold value.
Further, the processor 84, which is configured as running the executable program, is implemented as follows step:
The functional value is multiplied with the baseband signal after the delay, obtains the compensated base band letter
Number.
Further, the processor 84, which is configured as running the executable program, is implemented as follows step:
Obtain respectively according to the following formula the baseband signal short-time rating and it is long when power,
Wherein, the PowS (n) is the short-time rating, and power when the PowL (n) is described long, the n is described
The sampling sequence number of baseband signal, the x (i) are the baseband signal, and the N is that short time-window is long, and window is long when the M is long, institute
Stating λ is memory fact.
Further, the parameter information, comprising: voltage, temperature, mean power and instantaneous power.
As shown in figure 8, the various components in the equipment 08 of compensation long-term memory effect are coupled by bus 82；It can
Understand, bus 82 further includes power supply in addition to including data/address bus for realizing the connection communication between these components, bus 82
Bus, control bus and status signal bus in addition, but for the sake of clear explanation, various buses are all designated as bus in fig. 8
82。
Wherein, interface 81 may include display, keyboard, mouse, trace ball, click wheel, key, button, touch-sensitive plate or
Person's touch screen etc..
It is appreciated that memory 83 can be volatile memory or nonvolatile memory, may also comprise volatibility and
Both nonvolatile memories.Wherein, nonvolatile memory can be read-only memory (ROM, Read Only Memory),
Programmable read only memory (PROM, Programmable Read-Only Memory), Erasable Programmable Read Only Memory EPROM
(EPROM, Erasable Programmable Read-Only Memory), electrically erasable programmable read-only memory
The storage of (EEPROM, Electrically Erasable Programmable Read-Only Memory), magnetic random access
Device (FRAM, ferromagnetic random access memory), flash memory (Flash Memory), magnetic surface are deposited
Reservoir, CD or CD-ROM (CD-ROM, Compact Disc Read-Only Memory)；Magnetic surface storage can be
Magnetic disk storage or magnetic tape storage.Volatile memory can be random access memory (RAM, Random Access
Memory), it is used as External Cache.By exemplary but be not restricted explanation, the RAM of many forms is available, such as
Static random access memory (SRAM, Static Random Access Memory), synchronous static random access memory
(SSRAM, Synchronous Static Random Access Memory), dynamic random access memory (DRAM,
Dynamic Random Access Memory), Synchronous Dynamic Random Access Memory (SDRAM, Synchronous
Dynamic Random Access Memory), double data speed synchronous dynamic RAM (DDRSDRAM,
Double Data Rate Synchronous Dynamic Random Access Memory), enhanced synchronous dynamic random
Access memory (ESDRAM, Enhanced Synchronous Dynamic Random Access Memory), synchronized links
Dynamic random access memory (SLDRAM, SyncLink Dynamic Random Access Memory), direct rambus
Random access memory (DRRAM, Direct Rambus Random Access Memory)；Description of the embodiment of the present invention is deposited
Reservoir 83 is intended to include but is not limited to the memory of these and any other suitable type.
Memory 83 in the embodiment of the present invention supports compensation long-term memory effect for storing various types of data
Equipment 08 operation, the example of these data include: for compensation long-term memory effect equipment 08 on operate it is any
Computer program, such as operating system and application program, wherein operating system includes various system programs, such as ccf layer, core
Heart library layer, driving layer etc., for realizing various basic businesses and the hardware based task of processing；Application program may include respectively
Kind application program, such as media player (Media Player), browser (Browser) etc. apply industry for realizing various
Business, realizes that the program of present invention method may include in the application.
The method that the embodiments of the present invention disclose can be applied in processor 84, or be realized by processor 84；Place
Managing device 84 may be a kind of IC chip, the processing capacity with signal；During realization, each step of the above method
It can be completed by the integrated logic circuit of the hardware in processor 84 or the instruction of software form, above-mentioned processor 84 can
Be general processor, digital signal processor (DSP, Digital Signal Processor) or other programmable patrol
Collect device, discrete gate or transistor logic, discrete hardware components etc.；Processor 84 may be implemented or execute the present invention
Disclosed each method, step and logic diagram in embodiment；General processor can be microprocessor or any conventional
Processor etc.；The step of method in conjunction with disclosed in the embodiment of the present invention, can be embodied directly in hardware decoding processor execution
Complete, or in decoding processor hardware and software module combine execute completion；Software module can be located at storage medium
In, which is located at memory 83, and processor 84 reads the information in memory 83, completes preceding method in conjunction with its hardware
The step of.
In the exemplary embodiment, the equipment 08 for compensating long-term memory effect can be dedicated integrated by one or more application
Circuit (ASIC, Application Specific Integrated Circuit), DSP, programmable logic device (PLD,
Programmable Logic Device), Complex Programmable Logic Devices (CPLD, Complex Programmable Logic
Device), field programmable gate array (FPGA, Field-Programmable Gate Array), general processor, control
Device, microcontroller (MCU, Micro Controller Unit), microprocessor (Microprocessor) or other electronics member
Part is realized, for executing preceding method.
The equipment of the present embodiment, can be used for executing it is above-mentioned shown in embodiment of the method technical solution, realization principle and
Technical effect is similar, and details are not described herein again.
The embodiment of the present invention also provides a kind of computer readable storage medium, and the computer readable storage medium can be
The memories such as FRAM, ROM, PROM, EPROM, EEPROM, Flash Memory, magnetic surface storage, CD or CD-ROM,
It can be the various equipment including one of above-mentioned memory or any combination；The computer-readable recording medium storage has journey
Sequence, described program can be executed by processor, to perform the steps of
Obtain baseband signal short-time rating and it is long when power；
According to the short-time rating, it is described long when power and predetermined threshold range, obtain current working status indication letter
Number；
According to current the working status indication signal and parameter information, index address is obtained；
Functional value corresponding with the index address is obtained in default matrix look-up table；
According to the baseband signal after functional value compensation delay, the compensated baseband signal is obtained.
Further, described program can also be executed by the processor, to perform the steps of
It is trained, is obtained in difference under different voltage, temperature and power condition using single-tone and/or multi-tone signal
Voltage, temperature, the long-term memory characterisitic parameter under power condition；The length under different voltage, temperature, power condition
When memory characteristic parameter be multidimensional function；
The default square is formed according to the long-term memory characterisitic parameter under different voltage, temperature, power condition
Battle array look-up table.
Further, described program can be executed by the processor, to implement following steps:
The power when short-time rating is subtracted described long, obtains difference；
When the difference is greater than the first predetermined threshold value, determine the current working status indication signal for charging shape
State indication signal；
When the difference is less than the second predetermined threshold value, determine the current working status indication signal for electric discharge shape
State indication signal；
When the difference is less than or equal to the first predetermined threshold value, is greater than or equal to the second predetermined threshold value, institute is determined
Stating current working status indication signal is hold mode indication signal；
Wherein, the predetermined threshold range is made of first predetermined threshold value and second predetermined threshold value,
First predetermined threshold value is greater than second predetermined threshold value.
Further, described program can be executed by the processor, to implement following steps:
The functional value is multiplied with the baseband signal after the delay, obtains the compensated base band letter
Number.
Further, described program can be executed by the processor, to implement following steps:
Obtain respectively according to the following formula the baseband signal short-time rating and it is long when power,
Wherein, the PowS (n) is the short-time rating, and power when the PowL (n) is described long, the n is described
The sampling sequence number of baseband signal, the x (i) are the baseband signal, and the N is that short time-window is long, and window is long when the M is long, institute
Stating λ is memory fact.
Further, the parameter information, comprising: voltage, temperature, mean power and instantaneous power.
The computer readable storage medium of the present embodiment can be used for executing the technical side of above-mentioned shown embodiment of the method
Case, it is similar that the realization principle and technical effect are similar, and details are not described herein again.
It should be understood by those skilled in the art that, the embodiment of the present invention can provide as method, system or computer program
Product.Therefore, the shape of hardware embodiment, software implementation or embodiment combining software and hardware aspects can be used in the present invention
Formula.Moreover, the present invention, which can be used, can use storage in the computer that one or more wherein includes computer usable program code
The form for the computer program product implemented on medium (including but not limited to magnetic disk storage and optical memory etc.).
The present invention be referring to according to the method for the embodiment of the present invention, the process of equipment (system) and computer program product
Figure and/or block diagram describe.It should be understood that every one stream in flowchart and/or the block diagram can be realized by computer program instructions
The combination of process and/or box in journey and/or box and flowchart and/or the block diagram.It can provide these computer programs
Instruct the processor of general purpose computer, special purpose computer, Embedded Processor or other programmable data processing devices to produce
A raw machine, so that being generated by the instruction that computer or the processor of other programmable data processing devices execute for real
The device for the function of being specified in present one or more flows of the flowchart and/or one or more blocks of the block diagram.
These computer program instructions, which may also be stored in, is able to guide computer or other programmable data processing devices with spy
Determine in the computer-readable memory that mode works, so that it includes referring to that instruction stored in the computer readable memory, which generates,
Enable the manufacture of device, the command device realize in one box of one or more flows of the flowchart and/or block diagram or
The function of being specified in multiple boxes.
These computer program instructions also can be loaded onto a computer or other programmable data processing device, so that counting
Series of operation steps are executed on calculation machine or other programmable devices to generate computer implemented processing, thus in computer or
The instruction executed on other programmable devices is provided for realizing in one or more flows of the flowchart and/or block diagram one
The step of function of being specified in a box or multiple boxes.
The foregoing is only a preferred embodiment of the present invention, is not intended to limit the scope of the present invention.
Claims (19)
1. a kind of method for compensating long-term memory effect, which is characterized in that the described method includes:
Obtain baseband signal short-time rating and it is long when power；
According to the short-time rating, it is described long when power and predetermined threshold range, obtain current working status indication signal；
According to current the working status indication signal and parameter information, index address is obtained；
Functional value corresponding with the index address is obtained in default matrix look-up table；
According to the baseband signal after functional value compensation delay, the compensated baseband signal is obtained.
2. the method according to claim 1, wherein in the short-time rating and long Shi Gong for obtaining baseband signal
Before rate, the method also includes:
It is trained, is obtained in different electricity under different voltage, temperature and power condition using single-tone and/or multi-tone signal
Long-term memory characterisitic parameter under pressure, temperature, power condition；Remember when long under different voltage, temperature, power condition
Recalling characterisitic parameter is multidimensional function；
The default matrix is formed according to the long-term memory characterisitic parameter under different voltage, temperature, power condition to look into
Look for table.
3. the method according to claim 1, wherein it is described according to the short-time rating, it is described long when power and
Predetermined threshold range obtains current working status indication signal, comprising:
The power when short-time rating is subtracted described long, obtains difference；
When the difference is greater than the first predetermined threshold value, determine that the current working status indication signal refers to for charged state
Show signal；
When the difference is less than the second predetermined threshold value, determine that the current working status indication signal refers to for discharge condition
Show signal；
When the difference is less than or equal to the first predetermined threshold value, is greater than or equal to the second predetermined threshold value, work as described in determination
Preceding working status indication signal is hold mode indication signal；
Wherein, the predetermined threshold range is made of first predetermined threshold value and second predetermined threshold value, described
First predetermined threshold value is greater than second predetermined threshold value.
4. the method according to claim 1, wherein the base after the compensation delay according to the functional value
Band signal obtains the compensated baseband signal, comprising:
The functional value is multiplied with the baseband signal after the delay, obtains the compensated baseband signal.
5. the method according to claim 1, wherein the short-time rating and long Shi Gong for obtaining baseband signal
Rate, comprising:
Obtain respectively according to the following formula the baseband signal short-time rating and it is long when power,
Wherein, the PowS (n) is the short-time rating, and power when the PowL (n) is described long, the n is the base band
The sampling sequence number of signal, the x (i) are the baseband signal, and the N is that short time-window is long, and window is long when the M is long, and the λ is
Memory fact.
6. method according to any one of claims 1 to 5, which is characterized in that the parameter information, comprising: voltage, temperature
Degree, mean power and instantaneous power.
7. a kind of device for compensating long-term memory effect, which is characterized in that described device includes:
Obtain module, for obtain baseband signal short-time rating and it is long when power；
First processing module, for according to the short-time rating, it is described long when power and predetermined threshold range, obtain current work
Make condition indicative signal；
Second processing module, for obtaining index address according to current the working status indication signal and parameter information；
Searching module, for obtaining functional value corresponding with the index address in default matrix look-up table；
Compensating module, for obtaining the compensated base band according to the baseband signal after functional value compensation delay
Signal.
8. device according to claim 7, which is characterized in that described device further include:
Training module, for being trained under different voltage, temperature and power condition using single-tone and/or multi-tone signal,
Obtain the long-term memory characterisitic parameter under different voltage, temperature, power condition；It is described in different voltage, temperature, power
Under the conditions of long-term memory characterisitic parameter be multidimensional function；When according to long under different voltage, temperature, power condition
Memory characteristic parameter forms the default matrix look-up table.
9. device according to claim 7, which is characterized in that the first processing module is specifically used for by described in short-term
Power when power subtracts described long, obtains difference；When the difference is greater than the first predetermined threshold value, the current work is determined
Making condition indicative signal is charged state indication signal；When the difference is less than the second predetermined threshold value, determine described current
Working status indication signal be discharge condition indication signal；The difference be less than or equal to the first predetermined threshold value, be greater than
Or when being equal to the second predetermined threshold value, determine that the current working status indication signal is hold mode indication signal；Wherein,
The predetermined threshold range is made of first predetermined threshold value and second predetermined threshold value, the first pre- gating
Limit value is greater than second predetermined threshold value.
10. device according to claim 7, which is characterized in that the compensating module, be specifically used for by the functional value with
The baseband signal after the delay is multiplied, and obtains the compensated baseband signal.
11. device according to claim 7, which is characterized in that the acquisition module, specifically for dividing according to the following formula
Do not obtain the baseband signal short-time rating and it is long when power,
Wherein, the PowS (n) is the short-time rating, and power when the PowL (n) is described long, the n is the base band
The sampling sequence number of signal, the x (i) are the baseband signal, and the N is that short time-window is long, and window is long when the M is long, and the λ is
Memory fact.
12. according to the described in any item devices of claim 7 to 11, which is characterized in that the parameter information, comprising: voltage, temperature
Degree, mean power and instantaneous power.
13. a kind of equipment for compensating long-term memory effect, which is characterized in that the equipment includes: interface, bus, memory, with
Processor, the interface, memory are connected with processor by the bus, and the memory is for storing executable journey
Sequence, the processor is configured to running the executable program realizes following steps:
Obtain baseband signal short-time rating and it is long when power；
According to the short-time rating, it is described long when power and predetermined threshold range, obtain current working status indication signal；
According to current the working status indication signal and parameter information, index address is obtained；
Functional value corresponding with the index address is obtained in default matrix look-up table；
According to the baseband signal after functional value compensation delay, the compensated baseband signal is obtained.
14. equipment according to claim 13, which is characterized in that the processor is additionally configured to run described executable
Program realizes following steps:
It is trained, is obtained in different electricity under different voltage, temperature and power condition using single-tone and/or multi-tone signal
Long-term memory characterisitic parameter under pressure, temperature, power condition；Remember when long under different voltage, temperature, power condition
Recalling characterisitic parameter is multidimensional function；
The default matrix is formed according to the long-term memory characterisitic parameter under different voltage, temperature, power condition to look into
Look for table.
15. equipment according to claim 13, which is characterized in that the processor is configured to the operation executable journey
Sequence is implemented as follows step:
The power when short-time rating is subtracted described long, obtains difference；
When the difference is greater than the first predetermined threshold value, determine that the current working status indication signal refers to for charged state
Show signal；
When the difference is less than the second predetermined threshold value, determine that the current working status indication signal refers to for discharge condition
Show signal；
When the difference is less than or equal to the first predetermined threshold value, is greater than or equal to the second predetermined threshold value, work as described in determination
Preceding working status indication signal is hold mode indication signal；
Wherein, the predetermined threshold range is made of first predetermined threshold value and second predetermined threshold value, described
First predetermined threshold value is greater than second predetermined threshold value.
16. equipment according to claim 13, which is characterized in that the processor is configured to the operation executable journey
Sequence is implemented as follows step:
The functional value is multiplied with the baseband signal after the delay, obtains the compensated baseband signal.
17. equipment according to claim 13, which is characterized in that the processor is configured to the operation executable journey
Sequence is implemented as follows step:
Obtain respectively according to the following formula the baseband signal short-time rating and it is long when power,
Wherein, the PowS (n) is the short-time rating, and power when the PowL (n) is described long, the n is the base band
The sampling sequence number of signal, the x (i) are the baseband signal, and the N is that short time-window is long, and window is long when the M is long, and the λ is
Memory fact.
18. 3 to 17 described in any item equipment according to claim 1, which is characterized in that the parameter information, comprising: voltage,
Temperature, mean power and instantaneous power.
19. a kind of computer readable storage medium, which is characterized in that the computer-readable recording medium storage has program, institute
Stating program can be executed by processor, to realize such as the method for compensation long-term memory effect as claimed in any one of claims 1 to 6
Step.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810244204.8A CN110324013A (en) | 2018-03-23 | 2018-03-23 | Compensate the method, device and equipment of long-term memory effect |
| PCT/CN2019/075933 WO2019179280A1 (en) | 2018-03-23 | 2019-02-22 | Method and apparatus for compensating for long-term memory effect, and device |
| EP19771344.9A EP3678423B1 (en) | 2018-03-23 | 2019-02-22 | Method and apparatus for compensating for long-term memory effect, and device |
| JP2020529134A JP6915163B2 (en) | 2018-03-23 | 2019-02-22 | Methods, devices and devices that compensate for long-term memory effects |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810244204.8A CN110324013A (en) | 2018-03-23 | 2018-03-23 | Compensate the method, device and equipment of long-term memory effect |
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| CN110324013A true CN110324013A (en) | 2019-10-11 |
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| CN201810244204.8A Pending CN110324013A (en) | 2018-03-23 | 2018-03-23 | Compensate the method, device and equipment of long-term memory effect |
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| Country | Link |
|---|---|
| EP (1) | EP3678423B1 (en) |
| JP (1) | JP6915163B2 (en) |
| CN (1) | CN110324013A (en) |
| WO (1) | WO2019179280A1 (en) |
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| CN1874176B (en) * | 2005-05-31 | 2010-06-16 | 中兴通讯股份有限公司 | Method and equipment for controlling power of personal hand held phone system |
| CN101483627B (en) * | 2008-01-07 | 2011-05-11 | 中兴通讯股份有限公司 | Method for reducing PAR of carrier signal |
| CN101977426B (en) * | 2010-10-26 | 2013-07-10 | 三维通信股份有限公司 | Method for reducing uplink noise of GSM (Global System for Mobile Communications) digital repeater |
| CN102348264A (en) * | 2011-09-27 | 2012-02-08 | 中兴通讯股份有限公司 | Low power consumption method and system for LTE (long term evolution) base station system |
| CN104283826B (en) * | 2013-07-03 | 2019-07-05 | 中兴通讯股份有限公司 | A kind of digital compensation method, device and duplexer |
| US9866269B1 (en) * | 2016-11-17 | 2018-01-09 | Xilinx, Inc. | Method of and circuit for predistortion for a power amplifier |
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| JP6915163B2 (en) | 2021-08-04 |
| WO2019179280A1 (en) | 2019-09-26 |
| EP3678423A4 (en) | 2021-06-02 |
| EP3678423A1 (en) | 2020-07-08 |
| EP3678423B1 (en) | 2023-12-13 |
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