CN110323295B - Multi-quantum well InGaN solar cell with AlGaN structure inserted - Google Patents

Multi-quantum well InGaN solar cell with AlGaN structure inserted Download PDF

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CN110323295B
CN110323295B CN201910621673.1A CN201910621673A CN110323295B CN 110323295 B CN110323295 B CN 110323295B CN 201910621673 A CN201910621673 A CN 201910621673A CN 110323295 B CN110323295 B CN 110323295B
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gan layer
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CN110323295A (en
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单恒升
宁丹丹
马淑芳
邢茹萍
席婷
尚林
许并社
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Shaanxi University of Science and Technology
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    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
    • H01L31/076—Multiple junction or tandem solar cells
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    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
    • H01L31/1848—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P comprising nitride compounds, e.g. InGaN, InGaAlN
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    • H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
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    • Y02E10/544—Solar cells from Group III-V materials
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Abstract

The invention discloses a multi-quantum well InGaN solar cell inserted with an AlGaN structure, which comprises a substrate; the GaN-based solar cell comprises a substrate, an N-type doped GaN layer, an AlGaN barrier layer I, a superlattice layer, an unintentional doped GaN buffer layer, a quantum well absorption layer, an AlGaN barrier layer II and a p-type doped GaN layer, wherein the substrate is sequentially provided with the GaN layer and the n-type doped GaN layer, one side of the upper surface of the n-type doped GaN layer is provided with a table top lower than the upper surface of the n-type doped GaN layer, the n-type doped GaN layer is sequentially stacked with the AlGaN barrier layer I, the superlattice layer, the unintentional doped GaN buffer layer, the quantum well absorption layer; the table top of the n-type doped GaN layer is provided with an n-type electrode. According to the invention, the AlGaN layers are inserted into two sides of the multiple quantum well, so that the interface steepness of the multiple quantum well is effectively enhanced, the interface quality is improved, the photoelectric conversion efficiency reaches 1.432%, the photoelectric conversion efficiency is improved by 138.7% compared with that of the traditional solar cell, and the solar cell has a good application prospect.

Description

Multi-quantum well InGaN solar cell with AlGaN structure inserted
Technical Field
The invention relates to the technical field of semiconductor material preparation, in particular to a multi-quantum well InGaN solar cell inserted with an AlGaN structure.
Background
The III-V nitride semiconductor material has the advantages of large forbidden band width, high electron mobility, high thermal conductivity, high hardness, stable chemical property, small dielectric constant, strong radiation resistance and the like, so the III-V nitride semiconductor material has huge application potential in microelectronics, optoelectronics and even space fields. Especially for InGaN materials and devices, the forbidden band width is continuously adjustable from 0.7eV to 3.4eV, and the wave band completely covers from a near infrared spectrum region to an ultraviolet spectrum region and is perfectly matched with the solar spectrum. Therefore, research into InGaN-based solar cells is receiving increasing attention from researchers.
Experimental research on InGaN solar cells beganIn 2003, Wu et al proposed InGaN for use in solar cell design; in 2005, Jani et al first tried to design and fabricate GaN/InGaN heterojunction and GaN/InGaN quantum well solar cells and measured their photoelectric response characteristics under ultraviolet and white light irradiation; in 2007 they further produced p-GaN/i-In with high open-circuit voltage (2.4eV), fill factor (80%) and external quantum efficiency (40%)0.05Ga0.95N/N-GaN heterojunction solar cells and the phase separation phenomenon and poor p-type ohmic contact of InGaN materials are proposed to deteriorate the performance of the cells. In the subsequent studies, researchers improved the quality of the material and increased the In composition. However, with the increase of the In component, researches have found that the phase separation of the InGaN material caused by the high In component has a negative effect on the device performance, and In order to further increase the In component while ensuring the material quality, researchers have tried to manufacture InGaN solar cells using new structures, such as InGaN/GaN quantum wells and superlattice structures.
The concept of quantum wells was first proposed in 1970 by Esaki and Tsu of bell laboratories. In the last 90 s of century, Keith bambambam et al, university of london, england, introduced a multiple quantum well structure into the intrinsic layer of p-i-n type solar cell for the first time, raising the conversion efficiency of the device to 14%. At present, the structure is widely used in various material systems such as InGaAs/GaAS, AlGaAs/GaAS, InGaAsP/InP, etc. The band structure of the multi-quantum well structure solar cell is as follows: the intrinsic layer (i layer) is formed by periodically and alternately growing thin semiconductor material layers with different band gaps, generally serves as a barrier layer with wide band gap, and serves as a well layer with narrow band gap. By reasonably adjusting the material of the quantum well layer, the number of quantum wells and the width of the quantum wells, the absorption band gap of the multi-quantum-well solar cell can be adjusted, and the spectral response range of the device is widened. The introduction of quantum well structures has become a future development trend for III-V solar cells.
At present, sapphire is widely used as a substrate material of an InGaN solar cell, but a large lattice mismatch and thermal mismatch exist between the sapphire and GaN and InN, even though a GaN substrate or other buffer layers are used, the mismatch degree of the sapphire and the GaN and InN is up to 10%, a large number of dislocations and defects exist in an epitaxial layer, and the dislocations and defects serve as non-radiative recombination centers and can interact with photon-generated carriers to cause the service life of the photon-generated carriers to be reduced, so that the short-circuit current and the open-circuit voltage of the device are reduced. In order to solve the problem of high-quality growth of InGaN/GaN multi-quantum well epitaxial materials, a superlattice layer is inserted as a stress release layer to release stress of GaN and a sapphire substrate at present, then a high-quality multi-quantum well material is epitaxially grown, and finally a p-GaN material is grown. However, although the solar cell adopting the quantum well structure can improve the crystallization quality of the material, the cell efficiency of the multiple quantum well structure is still low, and the cell efficiency of the 10-layer multiple quantum well structure is only 0.6%, because the steepness of the interface in the quantum well is low, more dislocations are introduced, and the performance of the device is reduced.
Disclosure of Invention
In order to solve the defects in the prior art, the invention provides the multi-quantum well InGaN solar cell inserted with the AlGaN structure, the AlGaN layers with certain thicknesses are inserted at the two sides of the multi-quantum well, so that the interface steepness of the InGaN multi-quantum well is effectively improved, the crystallization quality of p-GaN is improved, the interface concentration is reduced, the nonradiative recombination center of the p-GaN layer is reduced, the nonradiative recombination probability is reduced, the rule of transporting effective carriers to the p-GaN layer is improved, and the performance of a device is finally improved.
The invention provides a multi-quantum well InGaN solar cell with an AlGaN structure inserted, namely AlGaN layers are inserted at two sides of the multi-quantum well and comprise a substrate; the GaN-based solar cell comprises a substrate, and is characterized in that a GaN layer is arranged on the GaN layer, an n-type doped GaN layer is arranged on the GaN layer, a table board is arranged on one side of the upper surface of the n-type doped GaN layer, the table board is lower than the upper surface of the n-type doped GaN layer, an AlGaN barrier layer I, a superlattice layer, an unintended doped GaN buffer layer, a quantum well absorption layer, an AlGaN barrier layer II and a p-type doped GaN layer are sequentially stacked from bottom to top on the upper surface of the n-type doped GaN layer, a plurality of p-type electrodes are arranged on the p-type doped GaN layer, and adjacent p-type electrodes are connected through a transparent electrode;
an n-type electrode is arranged on the table-board of the n-type doped GaN layer.
Preferably, AlGaN potentialBarrier layer I is AlxGa1-xAnd N, wherein x is more than 0 and less than or equal to 0.2, and the thickness of the AlGaN barrier layer I is 35-45 nm.
Preferably, the AlGaN barrier layer II is AlxGa1-xAnd N, wherein x is more than 0 and less than or equal to 0.2, and the thickness of the AlGaN barrier layer II is 25-35 nm.
Preferably, the quantum well absorption layer comprises 10-15 In layers0.16Ga0.84N/GaN periodic structure, In each period0.16Ga0.84The thickness of the N layer is 2-5 nm, and the thickness of the GaN layer is 5-10 nm.
Preferably, the superlattice layer comprises 10 In layers0.04Ga0.96N/GaN periodic structure, In each period0.04Ga0.96The thickness of the N layer is 1-3 nm, and the thickness of the GaN layer is 1-5 nm.
Preferably, the p-type doped GaN layer is a Mg-doped p-GaN layer, the thickness of the p-type doped GaN layer is 30-50 μm, and the doping concentration is 1 × 1021cm-3。
Preferably, the n-type doped GaN layer is a Si-doped n-GaN layer, the thickness of the n-type doped GaN layer is 1-3 μm, and the doping concentration is 1 × 1019cm-3。
Preferably, the thickness of the GaN layer is 1-3 μm, and the thickness of the unintentionally doped GaN buffer layer is 60-100 nm.
Preferably, the p-type electrode is formed by sequentially depositing Cr, Ni and Au, and the n-type electrode is formed by sequentially depositing Cr, Ni and Au.
Preferably, the substrate is a sapphire substrate.
Compared with the prior art, the invention has the following beneficial effects:
1. according to the invention, the AlGaN layers are inserted into two sides of the multiple quantum well, so that the interface steepness of the multiple quantum well is effectively enhanced, and the interface quality is further improved; the non-radiative recombination center is reduced, the non-radiative recombination probability is reduced, the tunneling probability of carriers is improved, and finally the performance of the solar cell is improved; 2. the solar cell has good performance, and the short-circuit current density of the solar cell reaches 9.25A/m2Compared with the traditional solar cell, the solar cell is improved by 77.7 percentThe photoelectric conversion efficiency of the solar cell reaches 1.432%, the photoelectric conversion efficiency is improved by 138.7% compared with that of the traditional solar cell, and meanwhile, because the InGaN-based material has stronger radiation resistance, the cell with the structure has stronger application value in the field of space and provides technical support for the aerospace cell.
Drawings
FIG. 1 is a schematic structural diagram of a multi-quantum well InGaN solar cell with an inserted AlGaN structure according to the present invention;
fig. 2 is a performance graph of the solar cell of example 1 of the present invention.
In the figure: 1. a substrate; 2. a GaN layer; 3. an n-type doped GaN layer; 4. an AlGaN barrier layer I; 5. a superlattice layer; 6. unintentionally doping the GaN buffer layer; 7. a quantum well absorption layer; 8. an AlGaN barrier layer II; 9. a p-type doped GaN layer; 10. a transparent electrode layer; 11. a p-type electrode; 12. an n-type electrode.
Detailed Description
The following are specific embodiments of the present invention and are further described with reference to the drawings, but the present invention is not limited to these embodiments.
Example 1
The present embodiment provides a multi-quantum well InGaN solar cell inserted with an AlGaN structure, as shown in fig. 1, including a substrate 1; the substrate 1 is sapphire, a GaN layer 2 with a thickness of 2 μm is arranged on the sapphire substrate 1, a thickness of 2 μm is arranged on the GaN layer 2, and the doping concentration is 1 × 1019cm-3The Si-doped n-GaN layer 3, one side of the upper surface of the Si-doped n-GaN layer 3 is provided with a table top which is lower than the upper surface of the Si-doped n-GaN layer 3, and Al with the thickness of 40nm is sequentially laminated on the upper surface of the Si-doped n-GaN layer 3 from bottom to top0.15Ga0.85N barrier layer I4, InGaN/GaN superlattice layer 5, 80nm thick unintentionally doped GaN buffer layer 6, InGaN/GaN quantum well absorption layer 7, and 30nm thick Al0.15Ga0.85N barrier layer II 8 with a thickness of 40nm and a doping concentration of 1 × 1021cm-3Mg doped p-GaN layer 9; wherein the superlattice layer 5 has a growth cycle number of 10, and each layer is In0.04Ga0.96The thickness of the N layer is 2Nm, In of 3nm thickness of each GaN layer0.04Ga0.96An N/GaN layer; the quantum well absorption layer 7 has a periodicity of 13, In each layer0.16Ga0.84N layers having a thickness of 3nm, and In layers each having a thickness of 9nm of GaN layers0.16Ga0.84An N/GaN layer;
a plurality of p-type electrodes 11 are arranged on the Mg-doped p-GaN layer 9, and the adjacent p-type electrodes 11 are connected through a transparent electrode layer 10 arranged on the p-type doped GaN layer; an n-type electrode 12 is arranged on the table top of the n-type doped GaN layer 3, and the p-type electrode 11 and the n-type electrode are obtained by sequentially depositing Cr, Ni and Au.
The preparation process of the multi-quantum well InGaN solar cell inserted with the AlGaN structure is as follows:
step 1: a GaN-based thin film epitaxial wafer to be grown on the sapphire substrate 1 was grown with a volume ratio of 5: 1: 1, soaking the materials in a mixed solution of sulfuric acid, hydrogen peroxide and water at the temperature of 60 ℃, washing the materials by water for spin-drying after soaking the materials for 5 minutes, and then mixing the materials in a volume ratio of l: 5, soaking the mixture of hydrochloric acid and water for 5 minutes, and washing by water for spin-drying;
step 2: evaporating a transparent electrode layer (ITO)10 on the surface of the epitaxial wafer, wherein the thickness of the evaporated ITO is 230 nm;
and step 3: coating positive photoresist with 500 for 5 s, coating positive photoresist with 4000 for 25 s, baking at 105 deg.C for 90 s, baking, covering the surface with a photoetching plate Ll with light intensity of 13mW/cm2Exposing the substrate for 6 seconds by using an exposure machine, developing the substrate for 20 seconds by using a developer after exposure, and then washing the substrate; finally, checking the developed graph, and if no abnormity exists, baking the graph for 25 minutes at 125 ℃ by using a hot plate;
and 4, step 4: heating the ITO etching solution to 47 ℃, measuring the temperature by using a thermometer before each corrosion to ensure that the temperature of the solution reaches 47 ℃, and then corroding in the etching solution for 7 minutes; observing the corrosion result under a microscope after the ITO corrosion is finished, if double lines can be seen under the microscope, the corrosion is successful, and if the double lines are not completely corroded, the epitaxial wafer is immersed in the corrosion solution for 30 seconds or 1 minute and then is washed and dried;
and 5: immersing the wafer into the photoresist removing liquid #2 for 10 minutes, and then immersing the wafer into the photoresist removing liquid #1 for 10 minutes, wherein the temperature of the photoresist removing liquid is controlled between 75 and 85 ℃; then, washing and drying the wafer, and removing the photoresist by adopting oxygen plasma, wherein the power of the oxygen plasma is 200W, and the removal time is 90 seconds;
step 6: baking the wafer on a hot plate at 105 ℃ for 60 seconds, then coating the positive photoresist by 500 transfer for 5 seconds, then coating the positive photoresist by 2500 transfer for 20 seconds, then baking the wafer on the hot plate at 105 ℃ for 90 seconds, and drying the photoresist; the reticle L2 was covered on its surface and exposed for 6 seconds by an exposure machine with a power of 13mW/cm2(ii) a After exposure, it was developed with a developer for 30 seconds and then rinsed clean. Finally, checking the developed graph, and if no abnormity exists, baking the graph for 30 minutes at 125 ℃ by using a hot plate;
and 7: putting the sample into an Inductively Coupled Plasma (ICP) (inductively coupled plasma) etching machine to etch the epitaxial wafer material, wherein the etching depth is estimated according to the thickness of the epitaxial wafer;
and 8: washing and spin-drying the wafer, removing photoresist by adopting oxygen plasma, immersing the wafer into a photoresist removing liquid #2 for 10 minutes, and then immersing the wafer into a photoresist removing liquid # l for 15 minutes, wherein the temperature of the photoresist removing liquid is controlled between 75 and 85 ℃; then, washing and drying the wafer, and removing the photoresist by adopting oxygen plasma, wherein the power of the oxygen plasma is 200W, and the removal time is 90 seconds;
and step 9: setting the temperature of the annealing furnace to 520 ℃, setting the flow of nitrogen to 2L/min, and annealing for 18 minutes;
step 10: coating the negative photoresist by 500 transfer for 5 seconds, and then coating the negative photoresist by 4000 transfer for 25 seconds, wherein the thickness of the photoresist is about 3 mu m; then baking the test piece for 90 seconds at 100 ℃ by using a hot plate, drying the photoresist, taking out the test piece and cooling the test piece to room temperature; the reticle L3 was covered on its surface and exposed for 9 seconds by an exposure machine having a light intensity of 13mW/cm2(ii) a Developing the film for 45 seconds by using a developer after exposure, and then washing the film; placing the test piece in an oven, heating at 120 ℃ for 15 minutes, taking out the test piece from the oven after the heating is finished, and cooling to room temperature; finally, checking the developed graph, and cleaning the surface of the graph by using oxygen plasma if the graph is not abnormal;
step 11: respectively evaporating electrodes on the P-type doped GaN layer and the n-type doped GaN layer by using an electron beam evaporator, wherein the electrodes on the P-GaN layer on the top surface adopt a grid finger-shaped structure, evaporated metals are Cr/Ni/Au (30nm/13nm/1200nm) in sequence, and the evaporation speed is set to be 0.1 nm/s;
step 12: immersing the wafer into a photoresist removing liquid #2 for 10 minutes, and then immersing the wafer into a photoresist removing liquid # l for 10 minutes, wherein the temperature of the photoresist removing liquid is controlled between 75 ℃ and 85 ℃; arranging the wafer on a workbench with the front side facing upwards, covering the surface of the wafer with a white film, lightly pressing with a piece of dust-free paper, wiping repeatedly to ensure that the white film is tightly contacted with the surface of the wafer, then lightly pulling up the white film, inspecting the surface of the wafer, and ensuring that the wafer is completely stripped; then, immersing the wafer into a photoresist removing liquid #2 for 5 minutes, and then immersing the wafer into a photoresist removing liquid # l for 10 minutes, wherein the temperature of the photoresist removing liquid is controlled between 75 and 85 ℃; finally, washing and drying;
step 13: setting the temperature of the annealing furnace to 300 ℃, setting the flow of nitrogen to 2L/min, and annealing for 30 minutes; and obtaining the multi-quantum well InGaN solar cell inserted with the AlGaN structure.
Example 2
The structure was the same as that of example 1, except that the AlGaN barrier layer I was Al0.1Ga0.9N。
Example 3
The structure was the same as that of example 1, except that the AlGaN barrier layer I was Al0.2Ga0.8N, thickness 35 nm.
Example 4
The structure was the same as that of example 1, except that the AlGaN barrier layer I was Al0.2Ga0.8N, thickness 45 nm.
Example 5
The structure was the same as that of example 1, except that the AlGaN barrier layer II was Al0.2Ga0.8N, thickness 20 nm.
Example 6
The structure was the same as that of example 1, except that the AlGaN barrier layer II was Al0.1Ga0.9N。
Example 7
And implementation ofExample 1 the structure was the same except that the AlGaN barrier layer II was Al0.2Ga0.8N, thickness 35 nm.
Example 8
The same as the structure of embodiment 1 except that the quantum well absorption layer 7 includes 10 In layers arranged In a stacked manner0.16Ga0.84N/GaN periodic structure, In each period0.16Ga0.84The thickness of the N layer is 2nm, and the thickness of the GaN layer is 10 nm.
Example 9
The same as the structure of embodiment 1 except that the quantum well absorption layer 7 includes 15 In layers arranged In a stacked manner0.16Ga0.84N/GaN periodic structure, In each period0.16Ga0.84The thickness of the N layer is 5nm, and the thickness of the GaN layer is 5 nm.
Example 10
In each of the different superlattice layers 5 as In the structure of example 10.04Ga0.96The thickness of the N layer was 1nm, and the thickness of the GaN layer was 5 nm.
Example 11
In each of the different superlattice layers 5 as In the structure of example 10.04Ga0.96The thickness of the N layer was 3nm, and the thickness of the GaN layer was 1 nm.
Example 12
The same structure as in example 1 was used except that the thickness of the Mg-doped p-GaN layer 9 was 50 μm.
Example 13
The structure was the same as that of example 1 except that the material of the p-type electrode 11 was Ni and the material of the n-type electrode was CrMg-doped p-GaN layer 9 having a thickness of 30 μm.
Example 14
The same structure as in example 1 was used except that the thickness of the Si-doped n-GaN layer 3 was 1 μm.
Example 15
The same structure as in example 1 was used except that the thickness of the Si-doped n-GaN layer 3 was 3 μm.
Example 16
The same structure as in example 1 was used except that the thickness of the GaN layer 2 was 3 μm.
Example 17
The same structure as in example 1 was used except that the thickness of the GaN layer 2 was 1 μm.
Example 18
The thickness of the unintentionally doped GaN buffer layer 6 was 60nm, which is the same as the structure of example 1.
Example 19
The thickness of the unintentionally doped GaN buffer layer 6 was 100nm, which is the same as the structure of example 1.
Comparative example 1
Same as the structure of example 1, except that Al was not added0.15Ga0.85N barrier layer I4 and Al0.15Ga0.85And an N barrier layer II 8, namely the conventional solar cell.
Examples 1 to 19 all have better performance, and we take example 1 as an example, the solar cell of example 1 and the solar cell of a comparative example are subjected to performance test and compared, fig. 2 is a performance graph of the solar cell of example 1, table 1 is performance data of the solar cell of example 1, and as can be seen from fig. 2 and table 1, the photoelectric conversion efficiency of the solar cell of example 1 reaches 1.432%, the photoelectric conversion efficiency of the comparative example reaches 0.6%, and the photoelectric conversion efficiency of the solar cell of example 1 is improved by 138.7% compared with the solar cell of the comparative example; the short-circuit current density of the invention reaches 9.25A/m2The improvement is 77.7% relative to the solar cell of comparative example 1, so the solar cell of the present invention has excellent performance.
Table 1 data table of solar cell of example 1
VOC(V) JSC(A/m2) η FF
2.17 9.25 1.38％ 68.73％
The foregoing is only a preferred embodiment of the present invention, and it should be noted that those skilled in the art can make various improvements and modifications without departing from the principle of the present invention, and these improvements and modifications should also be construed as the protection scope of the present invention.

Claims (7)

1. A multi-quantum well InGaN solar cell with an inserted AlGaN structure, comprising a substrate (1); the GaN-based light-emitting diode is characterized in that a GaN layer (2) is arranged on the substrate (1), an n-type doped GaN layer (3) is arranged on the GaN layer (2), a table top is arranged on one side of the upper surface of the n-type doped GaN layer (3), the table top is lower than the upper surface of the n-type doped GaN layer (3), an AlGaN barrier layer I (4), a superlattice layer (5), an unintended doped GaN buffer layer (6), a quantum well absorption layer (7), an AlGaN barrier layer II (8) and a p-type doped GaN layer (9) are sequentially stacked on the upper surface of the n-type doped GaN layer (3) from bottom to top, a plurality of p-type electrodes (11) are arranged on the p-type doped GaN layer (9), and adjacent p-type electrodes (11) are connected through transparent electrode layers (10) arranged on the p-type doped GaN layer (9);
an n-type electrode (12) is arranged on the table top of the n-type doped GaN layer (3);
the AlGaN barrier layer I (4) is AlxGa1-xN, wherein x is more than 0 and less than or equal to 0.2, and the thickness of the AlGaN barrier layer I (4) is 35-45 nm;
the AlGaN barrier layer II (8) is AlxGa1-xN, wherein x is more than 0 and less than or equal to 0.2, and the AlGaN barrier layer II (8)The thickness is 25-35 nm;
the p-type doped GaN layer (9) is a Mg-doped p-GaN layer, the thickness of the p-type doped GaN layer (9) is 30-50 mu m, and the doping concentration is 1 multiplied by 1021cm-3。
2. The multi-quantum-well InGaN solar cell of claim 1, wherein the quantum-well absorption layer (7) comprises 10 to 15 In layers0.16Ga0.84N/GaN periodic structure, In each period0.16Ga0.84The thickness of the N layer is 2-5 nm, and the thickness of the GaN layer is 5-10 nm.
3. An InGaN solar cell with multiple quantum wells inserted In an AlGaN structure according to claim 1, wherein the superlattice layer (5) comprises 10 In layers arranged In a stack0.04Ga0.96N/GaN periodic structure, In each period0.04Ga0.96The thickness of the N layer is 1-3 nm, and the thickness of the GaN layer is 1-5 nm.
4. The multi-quantum well InGaN solar cell of claim 1, wherein the n-type doped GaN layer (3) is a Si-doped n-GaN layer, the thickness of the n-type doped GaN layer (3) is 1-3 μm, and the doping concentration is 1 x 1019cm-3。
5. The multi-quantum well InGaN solar cell inserted with an AlGaN structure according to claim 1, wherein the thickness of the GaN layer (2) is 1 to 3 μm, and the thickness of the unintentionally doped GaN buffer layer (6) is 60 to 100 nm.
6. The multi-quantum well InGaN solar cell inserted in an AlGaN structure according to claim 1, wherein the p-type electrode (11) is sequentially deposited of Cr, Ni, and Au, and the n-type electrode (12) is sequentially deposited of Cr, Ni, and Au.
7. A multi-quantum well InGaN solar cell inserted in an AlGaN structure according to claim 1, wherein the substrate (1) is a sapphire substrate.
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