CN110322839B - AMOLED (active matrix/organic light emitting diode) time sequence control circuit and time sequence control method - Google Patents

AMOLED (active matrix/organic light emitting diode) time sequence control circuit and time sequence control method Download PDF

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CN110322839B
CN110322839B CN201810267217.7A CN201810267217A CN110322839B CN 110322839 B CN110322839 B CN 110322839B CN 201810267217 A CN201810267217 A CN 201810267217A CN 110322839 B CN110322839 B CN 110322839B
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thin film
film transistor
signal line
light emitting
turned
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CN110322839A (en
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周兴雨
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EverDisplay Optronics Shanghai Co Ltd
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EverDisplay Optronics Shanghai Co Ltd
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    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix

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  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Electroluminescent Light Sources (AREA)
  • Control Of El Displays (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)

Abstract

The invention relates to the technical field of display, and discloses an AMOLED (active matrix/organic light emitting diode) time sequence control circuit and a time sequence control method, wherein the time sequence control circuit comprises: the timing control circuit comprises a first thin film transistor, a second thin film transistor, a third thin film transistor, a fourth thin film transistor, a fifth thin film transistor, a sixth thin film transistor, a capacitor and an organic light emitting diode, and further comprises a seventh thin film transistor arranged between the second end of the first thin film transistor and a first node, and an eighth thin film transistor arranged between the second end of the first thin film transistor and a third node, wherein the second thin film transistor and the eighth thin film transistor are symmetrically arranged, the threshold values of the second thin film transistor and the eighth thin film transistor are equal, the threshold voltage of the driving thin film transistor can be compensated, and the timing control circuit can reduce wiring inside a panel to adapt to a small-size pixel space.

Description

AMOLED (active matrix/organic light emitting diode) time sequence control circuit and time sequence control method
Technical Field
The invention relates to the technical field of display, in particular to an AMOLED (active matrix/organic light emitting diode) time sequence control circuit and a time sequence control method.
Background
As shown in fig. 1, the conventional AMOLED timing control circuit has an AMOLED pixel driving circuit with a 7T1C structure, that is, a structure of seven tfts plus one capacitor, and includes a first tft T10, a second tft T20, a third tft T30, a fourth tft T40, a fifth tft T50, a sixth tft T60, a seventh tft T70, and a capacitor C10, wherein a gate of the first tft T10 is electrically connected to a second scan control signal line S2, a first end of the first tft T10 is electrically connected to a DATA signal line DATA, and a second end of the first tft T20 is electrically connected to a first end of the second tft T20 and a first end of the fourth tft T40 via a first node N10; a gate of the second thin film transistor T20 is electrically connected to the second node N20, a first terminal is electrically connected to the first node N10, and a second terminal is electrically connected to the third node N30; a gate of the third tft T30 is electrically connected to the second scan control signal line S2, a first terminal of the third tft T30 is electrically connected to the third node N30, and a second terminal of the third tft T30 is electrically connected to the second node N20 and the first terminal of the sixth tft T60; a gate of the fourth thin film transistor T40 is electrically connected to the light emitting signal line En, a first terminal of the fourth thin film transistor T40 is electrically connected to the first node N10, and a second terminal of the fourth thin film transistor T40 is electrically connected to the power voltage ELVDD; a gate of the fifth thin film transistor T50 is electrically connected to the light emitting signal line En, a first terminal of the fifth thin film transistor T50 is electrically connected to the third node N30, and a second terminal of the fifth thin film transistor T50 is electrically connected to the anode of the organic light emitting diode D10 and the second terminal of the seventh thin film transistor T70; a gate of the sixth thin film transistor T60 is electrically connected to the first scan control signal line S1, a first end of the sixth thin film transistor T60 is electrically connected to the second end of the third thin film transistor T30, and a second end of the sixth thin film transistor T60 is electrically connected to the first end of the seventh thin film transistor T70 and the reference voltage signal line VINT; a gate of the seventh thin film transistor T70 is connected to the second scan control signal line S2, a first end of the seventh thin film transistor T70 is electrically connected to the second end of the sixth thin film transistor T60 and the reference voltage signal line VINT, and a second end of the seventh thin film transistor T70 is electrically connected to the second end of the fifth thin film transistor T50 and the anode of the organic light emitting diode D10; a first end of the capacitor C10 is electrically connected to the second node N20, and the other end is connected to the power voltage ELVDD; the anode of the organic light emitting diode D10 is electrically connected to the second terminal of the fifth tft T50 and the second terminal of the seventh tft T70, and the cathode is grounded.
The AMOLED timing control circuit includes a plurality of signal lines, such as a first scan control signal line S1, two second scan control signal lines S2, and a reference voltage signal line VINT, and has complicated wiring and cannot satisfy a small pixel size.
Disclosure of Invention
The invention provides an AMOLED (active matrix/organic light emitting diode) time sequence control circuit and a time sequence control method.
In order to achieve the above object, the present invention provides an AMOLED timing control circuit, which includes a first thin film transistor, a second thin film transistor, a third thin film transistor, a fourth thin film transistor, a fifth thin film transistor, a sixth thin film transistor, a capacitor, and an organic light emitting diode;
the grid electrode of the first thin film transistor is electrically connected with the scanning control signal line, the first end of the first thin film transistor is electrically connected with the data signal line, and the second end of the first thin film transistor is electrically connected with the first node;
the grid electrode of the second thin film transistor is electrically connected to the second node, the first end of the second thin film transistor is electrically connected to the first node, and the second end of the second thin film transistor is electrically connected to the third node;
the grid electrode of the third thin film transistor is electrically connected to the scanning control signal line, the first end of the third thin film transistor is electrically connected to the second node, and the second end of the third thin film transistor is electrically connected to the third node;
a gate of the fourth thin film transistor is electrically connected to the second light emitting signal line, a first end of the fourth thin film transistor is electrically connected to a second end of the sixth thin film transistor, and a second end of the fourth thin film transistor is electrically connected to the first node;
a gate of the fifth thin film transistor is electrically connected to the second light emitting signal line, a first end of the fifth thin film transistor is electrically connected to the third node, and a second end of the fifth thin film transistor is electrically connected to an anode of the organic light emitting diode;
a gate of the sixth thin film transistor is electrically connected to the first light-emitting signal line, a first end of the sixth thin film transistor is electrically connected to a power supply voltage, and a second end of the sixth thin film transistor is electrically connected to a first end of the fourth thin film transistor;
the first end of the capacitor is electrically connected to the second node; the second end is electrically connected to the power voltage;
the anode of the organic light emitting diode is electrically connected to the second end of the fifth thin film transistor, and the cathode of the organic light emitting diode is grounded;
the second thin film transistor is a driving thin film transistor.
The AMOLED timing control circuit adopts a 6T1C structure, the threshold voltage of the driving thin film transistor is compensated through the third thin film transistor, and the AMOLED timing control circuit reduces scanning signal lines and reference voltage signal lines and reduces wiring inside a panel so as to adapt to a small-sized pixel space.
The AMOLED timing control circuit further includes:
the seventh thin film transistor is arranged between the second end of the first thin film transistor and the first node, the grid electrode of the seventh thin film transistor is electrically connected to the second node, the first end is electrically connected to the second end of the first thin film transistor, and the second end is electrically connected to the first node;
and the eighth thin film transistor is arranged between the second end of the first thin film transistor and the third thin film transistor, the grid electrode of the eighth thin film transistor is electrically connected with the second node and the first end of the capacitor and shares the grid electrode with the second thin film transistor, the first end is electrically connected with the second end of the first thin film transistor, and the second end is electrically connected with the second end and the third node of the third thin film transistor.
The AMOLED timing control circuit adopts an 8T1C structure, and realizes the function of compensating the threshold voltage of the driving thin film transistor by symmetrically arranging an eighth thin film transistor and a second thin film transistor with equal threshold voltages, so that the current flowing through the organic light emitting diode is unrelated to the threshold voltage of the second thin film transistor, namely the driving transistor; the AMOLED timing control circuit reduces scanning signal lines and reference voltage signal lines and reduces wiring inside a panel to adapt to a small-sized pixel space.
Preferably, the first thin film transistor, the second thin film transistor, the third thin film transistor, the fourth thin film transistor, the fifth thin film transistor, the sixth thin film transistor, the seventh thin film transistor, and the eighth thin film transistor are all low-temperature polysilicon thin film transistors, oxide semiconductor thin film transistors, or amorphous silicon thin film transistors.
Preferably, the eighth thin film transistor and the second thin film transistor are symmetrically arranged, and the channel widths of the eighth thin film transistor and the second thin film transistor are the same.
Preferably, the input terminal of the scan control signal line, the input terminal of the first light emitting signal line, and the input terminal of the second light emitting signal line are provided with connection terminals for connection with an external timing controller.
The invention also provides a time sequence control method of the AMOLED time sequence circuit in the technical scheme, which comprises the following steps:
entering an initialization stage, wherein a power supply voltage provides a high potential, a first light-emitting signal line provides the high potential, a sixth thin film transistor is closed, a second light-emitting signal line provides a low potential, a fourth thin film transistor and a fifth thin film transistor are opened, the voltage of a third node is equal to the voltage of an anode of an organic light-emitting diode, a scanning control signal line provides the low potential, the first thin film transistor and the third thin film transistor are opened, the voltage of a second node is equal to the voltage of the anode of the organic light-emitting diode, the second thin film transistor is opened, the sixth thin film transistor is in a closed state, a data signal line is in a closed state or provides the low potential, so that no current passes through the organic light-emitting diode, and the organic light;
entering an adjusting stage, wherein when the adjusting stage is finished, the power supply voltage provides a high potential, the first light-emitting signal line provides the high potential, the sixth thin film transistor is closed, the second light-emitting signal line provides the high potential, the fourth thin film transistor and the fifth thin film transistor are closed, the organic light-emitting diode does not emit light, the scanning control signal line provides the high potential, the first thin film transistor and the third thin film transistor are closed, the voltage of a second node is kept equal to the voltage of the anode of the organic light-emitting diode, and the second thin film transistor is opened;
entering a data writing stage, wherein a power supply voltage provides a high potential, a first light-emitting signal line provides the high potential, a sixth thin film transistor is closed, a second light-emitting signal line provides the high potential, a fourth thin film transistor and a fifth thin film transistor are closed, an organic light-emitting diode does not emit light, a scanning control signal line provides a low potential, the first thin film transistor and the third thin film transistor are opened, a data signal line provides the high potential, a second node writes in a voltage provided by the data signal line, and the second thin film transistor is closed;
entering a holding stage, wherein the power supply voltage provides a high potential, the first light-emitting signal line provides the high potential, the sixth thin film transistor is closed, the second light-emitting signal line provides the high potential, the fourth thin film transistor and the fifth thin film transistor are closed, the organic light-emitting diode does not emit light, the scanning control signal line provides the high potential, the first thin film transistor and the third thin film transistor are closed, the second node holds the voltage provided by the data signal line written in the data writing stage, and the second thin film transistor is closed;
and entering a driving stage, wherein the scanning control signal line provides a high potential, the first thin film transistor and the third thin film transistor are closed, the power supply voltage provides a high potential, the first light-emitting signal line provides a low potential, the sixth thin film transistor is opened, the second light-emitting signal line provides a low potential, the fourth thin film transistor and the fifth thin film transistor are opened, the second thin film transistor is in an open state, and the organic light-emitting diode emits light.
Preferably, the adjusting stage comprises:
in the first adjustment stage, the power voltage provides a high potential, the first light-emitting signal line provides a high potential, the sixth thin film transistor is closed, the second light-emitting signal line provides a low potential, the fourth thin film transistor and the fifth thin film transistor are opened, the scanning control signal line provides a high potential, the first thin film transistor and the third thin film transistor are closed, the voltage of the second node is kept equal to the voltage of the anode of the organic light-emitting diode, the second thin film transistor is opened, and the organic light-emitting diode does not emit light at the moment;
in the second adjustment stage, the power voltage provides a high potential, the first light-emitting signal line provides a high potential, the sixth thin film transistor is closed, the second light-emitting signal line provides a high potential, the fourth thin film transistor and the fifth thin film transistor are closed, the organic light-emitting diode does not emit light, the scanning control signal line provides a high potential, the first thin film transistor and the third thin film transistor are closed, the voltage of the second node is kept equal to the voltage of the anode of the organic light-emitting diode, and the second thin film transistor is opened.
When the AMOLED timing control circuit includes the seventh thin film transistor and the eighth thin film transistor:
in the initialization stage, the power voltage provides a high potential, the first light-emitting signal line provides a high potential, the sixth thin film transistor is turned off, the second light-emitting signal line provides a low potential, the fourth thin film transistor and the fifth thin film transistor are turned on, the voltage of the third node is equal to the voltage of the anode of the organic light-emitting diode, the scanning control signal line provides a low potential, the first thin film transistor and the third thin film transistor are turned on, the voltage of the second node is equal to the voltage of the anode of the organic light-emitting diode, the second thin film transistor, the seventh thin film transistor and the eighth thin film transistor are turned on, the sixth thin film transistor is in a turn-off state, the data signal line is in a turn-off state or provides a low potential so that no current passes through the organic light-;
in the adjusting stage, when the adjusting stage is finished, the power supply voltage provides a high potential, the first light-emitting signal line provides a high potential, the sixth thin film transistor is turned off, the second light-emitting signal line provides a high potential, the fourth thin film transistor and the fifth thin film transistor are turned off, the organic light-emitting diode does not emit light, the scanning control signal line provides a high potential, the first thin film transistor and the third thin film transistor are turned off, the voltage of the second node is kept equal to the voltage of the anode of the organic light-emitting diode, and the second thin film transistor, the seventh thin film transistor and the eighth thin film transistor are turned on;
in the data writing stage, the power voltage provides a high potential, the first light emitting signal line provides a high potential, the sixth thin film transistor is turned off, the second light emitting signal line provides a high potential, the fourth thin film transistor and the fifth thin film transistor are turned off, the organic light emitting diode does not emit light, the scan control signal line provides a low potential, the first thin film transistor and the third thin film transistor are turned on, the data signal line provides a high potential, the eighth thin film transistor is first turned on, the voltage provided by the data signal line is written into the second node through the first thin film transistor, the eighth thin film transistor and the third thin film transistor, when the eighth thin film transistor is turned off and the second and seventh thin film transistors are turned off after the second node voltage is Vdata- | Vth8|, wherein Vth8 is a threshold voltage of the eighth thin film transistor (T8), and Vdata is a voltage supplied by the Data signal Data;
in the holding stage, the power supply voltage provides a high potential, the first light-emitting signal line provides a high potential, the sixth thin film transistor is turned off, the second light-emitting signal line provides a high potential, the fourth thin film transistor and the fifth thin film transistor are turned off, the organic light-emitting diode does not emit light, the scan control signal line provides a high potential, the first thin film transistor and the third thin film transistor are turned off, the second node holds the voltage provided by the data signal line written in the data writing stage, and the second thin film transistor, the seventh thin film transistor and the eighth thin film transistor are turned off;
in the driving stage, the scan control signal line provides a high potential, the first thin film transistor and the third thin film transistor are turned off, the power supply voltage provides a high potential, the first light emitting signal line provides a low potential, the sixth thin film transistor is turned on, the second light emitting signal line provides a low potential, the fourth thin film transistor and the fifth thin film transistor are turned on, the second thin film transistor, the seventh thin film transistor and the eighth thin film transistor are in an on state, and the organic light emitting diode emits light.
Preferably, when the AMOLED timing control circuit includes the sixth thin film transistor and the seventh thin film transistor:
the adjusting stage comprises:
in the first adjustment stage, the power voltage provides a high potential, the first light-emitting signal line provides a high potential, the sixth thin film transistor is closed, the second light-emitting signal line provides a low potential, the fourth thin film transistor and the fifth thin film transistor are opened, the scanning control signal line provides a high potential, the first thin film transistor and the third thin film transistor are closed, the voltage of the second node is kept equal to the voltage of the anode of the organic light-emitting diode, the second thin film transistor, the seventh thin film transistor and the eighth thin film transistor are opened, and the organic light-emitting diode does not emit light at the moment;
in the second adjustment stage, the power voltage provides a high potential, the first light-emitting signal line provides a high potential, the sixth thin film transistor is turned off, the second light-emitting signal line provides a high potential, the fourth thin film transistor and the fifth thin film transistor are turned off, the organic light-emitting diode does not emit light, the scan control signal line provides a high potential, the first thin film transistor and the third thin film transistor are turned off, the voltage of the second node is kept equal to the voltage of the anode of the organic light-emitting diode, and the second thin film transistor, the seventh thin film transistor and the eighth thin film transistor are turned on.
Preferably, the scanning control signal line has a signal of two pulses or more, including at least one pulse of the same time for all rows and one pulse of progressive scanning.
Drawings
FIG. 1 is a timing control circuit of an AMOLED;
FIG. 2 is a first AMOLED timing control circuit provided in the present invention;
FIG. 3 is a second AMOLED timing control circuit provided by the present invention;
FIG. 4 is a timing diagram of the AMOLED timing control circuit shown in FIG. 3;
FIG. 5 is a circuit diagram of the AMOLED timing control circuit shown in FIG. 3 at an initialization stage;
FIG. 6 is a circuit diagram of the AMOLED timing control circuit shown in FIG. 3 at a first adjustment stage;
FIG. 7 is a circuit diagram of the AMOLED timing control circuit shown in FIG. 3 at a second adjustment stage;
FIG. 8 is a circuit diagram of the AMOLED timing control circuit shown in FIG. 3 during a data write phase;
FIG. 9 is a circuit diagram of the AMOLED timing control circuit shown in FIG. 3 during a hold phase;
FIG. 10 is a circuit diagram of the AMOLED timing control circuit shown in FIG. 3 at a driving stage.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 2, the present invention provides an AMOLED timing control circuit, which includes a first thin film transistor T1, a second thin film transistor T2, a third thin film transistor T3, a fourth thin film transistor T4, a fifth thin film transistor T5, a sixth thin film transistor T6, a capacitor C1, and an organic light emitting diode D1;
a gate of the first thin film transistor T1 is electrically connected to the scan control signal line Sn, a first end is electrically connected to the Data signal line Data, and a second end is electrically connected to the first node N1;
a gate of the second thin film transistor T2 is electrically connected to the second node N2, a first terminal is electrically connected to the first node N1, and a second terminal is electrically connected to the third node N3;
a gate of the third tft T3 is electrically connected to the scan control signal line Sn, a first terminal of the third tft T3 is electrically connected to the second node N2, and a second terminal of the third tft T3 is electrically connected to the third node N3;
a gate of the fourth thin film transistor T4 is electrically connected to the second light emitting signal line En2, a first end of the fourth thin film transistor T4 is electrically connected to a second end of the sixth thin film transistor T6, and a second end of the fourth thin film transistor T4 is electrically connected to the first node N1;
a gate of the fifth thin film transistor T5 is electrically connected to the second light emitting signal line En2, a first terminal of the fifth thin film transistor T5 is electrically connected to the third node N3, and a second terminal of the fifth thin film transistor T5 is electrically connected to the anode of the organic light emitting diode D1;
a gate of the sixth thin film transistor T6 is electrically connected to the first light-emitting signal line En1, a first terminal of the sixth thin film transistor T6 is electrically connected to the power voltage ELVDD, and a second terminal of the sixth thin film transistor T6 is electrically connected to the first terminal of the fourth thin film transistor T4;
a first end of the capacitor C1 is electrically connected to the second node N2; the second end is electrically connected to the power voltage ELVDD;
the anode of the organic light emitting diode D1 is electrically connected to the second end of the fifth thin film transistor T5, and the cathode is grounded;
the second thin film transistor T2 is a driving thin film transistor.
The AMOLED timing control circuit adopts a 6T1C structure, compensates the threshold voltage of the driving thin film transistor through the third thin film transistor T3, and reduces the number of scanning signal lines and reference voltage signal lines and the wiring inside the panel to adapt to a small-sized pixel space.
Referring to fig. 3, the AMOLED timing control circuit further includes:
a seventh tft T7 disposed between the second end of the first tft T1 and the first node N1, wherein a gate of the seventh tft T7 is electrically connected to the second node N2, a first end of the seventh tft T7 is electrically connected to the second end of the first tft T1, and a second end of the seventh tft T7 is electrically connected to the first node N1;
an eighth tft T8 disposed between the second end of the first tft T1 and the third tft T3, wherein a gate of the eighth tft T8 is electrically connected to the second node N2 and the first end of the capacitor C1, and shares a gate with the second tft T2, the first end is electrically connected to the second end of the first tft T1, and the second end is electrically connected to the second end of the third tft T3 and the third node N3.
The AMOLED timing control circuit adopts an 8T1C structure, and realizes the function of compensating the threshold voltage of the driving thin film transistor by symmetrically arranging an eighth thin film transistor and a second thin film transistor with equal threshold voltages, so that the current flowing through the organic light emitting diode is unrelated to the threshold voltage of the second thin film transistor, namely the driving transistor; the AMOLED timing control circuit reduces scanning signal lines and reference voltage signal lines and reduces wiring inside a panel to adapt to a small-sized pixel space.
Specifically, in the AMOLED timing control circuit, the first thin film transistor T1, the second thin film transistor T2, the third thin film transistor T3, the fourth thin film transistor T4, the fifth thin film transistor T5, the sixth thin film transistor T6, the seventh thin film transistor T7, and the eighth thin film transistor T8 are all low-temperature polysilicon thin film transistors, oxide semiconductor thin film transistors, or amorphous silicon thin film transistors.
The eighth tft T8 and the second tft T2 are symmetrically disposed and have the same channel width, so that the threshold voltages of the eighth tft T8 and the second tft T2 are equal, and the threshold voltage of the eighth tft T8 can compensate the threshold voltage of the second tft T2, i.e., the driving tft, so that the current flowing through the organic light emitting diode is independent of the threshold voltage of the second tft T2. The two tfts T2 are driving tfts, and the eighth tft T8 is a mirror image tft.
Specifically, an input terminal of the scan control signal line Sn, an input terminal of the first light emitting signal line En1, and an input terminal of the second light emitting signal line En2 are provided with connection terminals for connection with an external timing controller. The scan control signal line Sn and the light emitting signal line En are provided through an external sequential circuit.
The invention also provides a time sequence control method of the AMOLED time sequence circuit in the technical scheme, which comprises the following steps:
entering an initialization stage 1, the power supply voltage ELVDD provides a high potential, the first light emitting signal line En1 provides a high potential, the sixth thin film transistor T6 is turned off, the second light emitting signal line En2 provides a low potential, the fourth thin film transistor T4 and the fifth thin film transistor T5 are turned on, the voltage of the third node N3 is equal to the voltage of the anode of the organic light emitting diode D1, the scan control signal line Sn provides a low potential, the first thin film transistor T1 and the third thin film transistor T3 are turned on, the voltage of the second node N2 is equal to the voltage of the anode of the organic light emitting diode D1, the second thin film transistor T2 is turned on, the sixth thin film transistor T6 is in an off state, the Data signal line Data is in an off state, or a low potential is provided so that the Data flows through the organic light emitting diode D1, and the organic light emitting diode D46;
entering the first adjustment phase 2, the power voltage ELVDD provides a high voltage, the first light-emitting signal line En1 provides a high voltage, the sixth thin film transistor T6 is turned off, the second light-emitting signal line En2 provides a low voltage, the fourth thin film transistor T4 and the fifth thin film transistor T5 are turned on, the scan control signal line Sn provides a high voltage, the first thin film transistor T1 and the third thin film transistor T3 are turned off, the voltage of the second node N2 is kept equal to the voltage of the anode of the organic light-emitting diode D1, the second thin film transistor T2 is turned on, and since the sixth thin film transistor T6 is turned off, there is no conduction loop between the power voltage ELVDD and the organic light-emitting diode D1, and the first thin film transistor T1 and the third thin film transistor T3 are turned off, at this time, the organic light-emitting diode D1 does not emit light;
entering the second adjustment phase 3, the power voltage ELVDD is supplied with a high voltage, the first light-emitting signal line En1 is supplied with a high voltage, the sixth thin film transistor T6 is turned off, the second light-emitting signal line En2 is supplied with a high voltage, the fourth thin film transistor T4 and the fifth thin film transistor T5 are turned off, the fifth thin film transistor T5 is turned off so that the organic light emitting diode D1 has no conduction path and does not emit light, the scan control signal line Sn is supplied with a high voltage, the first thin film transistor T1 and the third thin film transistor T3 are turned off, the voltage of the second node N2 is maintained to be equal to the voltage of the anode of the organic light emitting diode D1, and the second thin film transistor T2 is turned on;
entering the Data writing phase 4, the power voltage ELVDD provides a high potential, the first light emitting signal line En1 provides a high potential, the sixth thin film transistor T6 is turned off, the second light emitting signal line En2 provides a high potential, the fourth thin film transistor T4 and the fifth thin film transistor T5 are turned off, the fifth thin film transistor T5 is turned off so that the organic light emitting diode D1 has no conduction path and does not emit light, the scan control signal line Sn provides a low potential, the first thin film transistor T1 and the third thin film transistor T3 are turned on, the Data signal line Data provides a high potential, the second node N2 writes the voltage provided by the Data signal line Data, and the second thin film transistor T2 is turned off;
entering the hold stage 5, the power voltage ELVDD provides a high potential, the first light-emitting signal line En1 provides a high potential, the sixth thin film transistor T6 is turned off, the second light-emitting signal line En2 provides a high potential, the fourth thin film transistor T4 and the fifth thin film transistor T5 are turned off, the fifth thin film transistor T5 is turned off so that the organic light emitting diode D1 does not emit light without a conduction path, the scan control signal line Sn provides a high potential, the first thin film transistor T1 and the third thin film transistor T3 are turned off, the second node N2 holds the voltage provided by the Data signal line Data written in the Data writing stage, and the second thin film transistor T2 is turned off;
in the driving phase 6, the scan control signal line Sn provides a high voltage, the first thin film transistor T1 and the third thin film transistor T3 are turned off, the power voltage ELVDD provides a high voltage, the first light emitting signal line En1 provides a low voltage, the sixth thin film transistor T6 is turned on, the second light emitting signal line En2 provides a low voltage, the fourth thin film transistor T4 and the fifth thin film transistor T5 are turned on, the second thin film transistor T2 is turned on, and the organic light emitting diode D1 emits light.
When the AMOLED timing control circuit includes the seventh thin film transistor T7 and the eighth thin film transistor T8, the timing control method provided by the present invention includes the following steps:
referring to fig. 4 and 5, in the initialization phase 1, the power voltage ELVDD is high, the first light emitting signal line En1 is high, the sixth thin film transistor T6 is turned off, the second light emitting signal line En2 is low, the fourth thin film transistor T4 and the fifth thin film transistor T5 are turned on, the voltage of the third node N3 is equal to the voltage of the anode of the organic light emitting diode D1, the scan control signal line Sn is low, the first thin film transistor T1 and the third thin film transistor T3 are turned on, the voltage of the second node N2 is equal to the voltage of the anode of the organic light emitting diode D1, the second thin film transistor T2, the seventh thin film transistor T7 and the eighth thin film transistor T8 are turned on, the sixth thin film transistor T6 is in the off state, so that there is no conduction loop between the power voltage ELVDD and the organic light emitting diode D1, and the power voltage cannot provide voltage to the light emitting diode, the Data signal line Data is in an off state or provides a low potential, no current passes through the organic light emitting diode D1, and the organic light emitting diode D1 does not emit light;
referring to fig. 4 and 6, in the first adjustment phase 2, the power voltage ELVDD provides a high voltage, the first light emitting signal line En1 provides a high voltage, the sixth thin film transistor T6 is turned off, the second light emitting signal line En2 provides a low voltage, the fourth thin film transistor T4 and the fifth thin film transistor T5 are turned on, the scan control signal line Sn provides a high voltage, the first thin film transistor T1 and the third thin film transistor T3 are turned off, the voltage of the second node N2 is kept equal to the voltage of the anode of the organic light emitting diode D1, the second thin film transistor T2, the seventh thin film transistor T7 and the eighth thin film transistor T8 are turned on, since the sixth thin film transistor T6 is turned off, there is no conduction loop between the power voltage ELVDD and the organic light emitting diode D1, the power voltage cannot provide a voltage to the light emitting diode, and the first thin film transistor T1 and the third thin film transistor T3 are turned off, the organic light emitting diode D1 does not emit light at this time;
referring to fig. 4 and 7, in the second adjustment phase 3, the power voltage ELVDD is supplied with a high voltage, the first light emitting signal line En1 is supplied with a high voltage, the sixth thin film transistor T6 is turned off, the second light emitting signal line En2 is supplied with a high voltage, the fourth thin film transistor T4 and the fifth thin film transistor T5 are turned off, the fifth thin film transistor T5 is turned off to make the organic light emitting diode D1 not emit light, the scan control signal line Sn is supplied with a high voltage, the first thin film transistor T1 and the third thin film transistor T3 are turned off, the voltage of the second node N2 is maintained to be equal to the voltage of the anode of the organic light emitting diode D1, and the second thin film transistor T2, the seventh thin film transistor T7 and the eighth thin film transistor T8 are turned on.
Referring to fig. 4 and 8, in the Data writing phase 4, the power voltage ELVDD is supplied with a high voltage, the first light emitting signal line En1 is supplied with a high voltage, the sixth thin film transistor T6 is turned off, the second light emitting signal line En2 is supplied with a high voltage, the fourth thin film transistor T4 and the fifth thin film transistor T5 are turned off, the fifth thin film transistor T5 is turned off to make the organic light emitting diode D1 not emit light through a conduction path, the scan control signal line Sn is supplied with a low voltage, the first thin film transistor T1 and the third thin film transistor T3 are turned on, the Data signal line Data is supplied with a high voltage, the eighth thin film transistor T8 is first turned on, the voltage supplied from the Data signal line Data is written into the second node N2 through the first thin film transistor T1, the eighth thin film transistor T8 and the third thin film transistor T3, and the eighth thin film transistor T8 is turned off after the voltage of the second node N2 is Vdata- | 8| v, The second thin film transistor T2 and the seventh thin film transistor T7 are turned off, where Vth8 is a threshold voltage of the eighth thin film transistor (T8) and Vdata is a voltage supplied by the Data signal Data;
referring to fig. 4 and 9, in the hold phase 5, the power voltage ELVDD is supplied with a high voltage, the first light emitting signal line En1 is supplied with a high voltage, the sixth thin film transistor T6 is turned off, the second light emitting signal line En2 is supplied with a high voltage, the fourth thin film transistor T4 and the fifth thin film transistor T5 are turned off, the fifth thin film transistor T5 is turned off to make the organic light emitting diode D1 not emit light but have no conduction path, the scan control signal line Sn is supplied with a high voltage, the first thin film transistor T1 and the third thin film transistor T3 are turned off, the second node N2 holds the voltage supplied from the Data signal line Data written in the Data write phase, and the second thin film transistor T2, the seventh thin film transistor T7 and the eighth thin film transistor T8 are turned off;
referring to fig. 4 and 10, in the driving phase 6, the scan control signal line Sn provides a high voltage, the first thin film transistor T1 and the third thin film transistor T3 are turned off, the power voltage ELVDD provides a high voltage, the first light emitting signal line En1 provides a low voltage, the sixth thin film transistor T6 is turned on, the second light emitting signal line En2 provides a low voltage, the fourth thin film transistor T4 and the fifth thin film transistor T5 are turned on, the second thin film transistor T2, the seventh thin film transistor T7 and the eighth thin film transistor T8 are turned on, the organic light emitting diode D1 emits light,
at this time, the voltage of the second node N2 is maintained at Vdata- | Vth8|, and the current flowing through the organic light emitting diode D1 is:
IOLED=1/2μCoxW/L(VELVDD-Vdata+Vth8-Vth2)^2
t8 and T2 are common gate mirror image relationships, and Vth8 can be designed to be as equal to Vth2 as possible, namely: vth 8-Vth 2 ═ 0;
wherein IOLEDIs the current flowing through the organic light emitting diode D1, μ is the carrier mobility of the driving thin film transistor, W and L are the width and length of the channel of the driving thin film transistor, respectively, and Vth8 is the threshold voltage of the eighth thin film transistor T8Voltage, Vth2 is the threshold voltage of the second thin film transistor T2, Vdata is the voltage provided by the Data signal Data; vELVDDIs the supply voltage.
As can be seen from the above analysis and calculation, the threshold voltage of the eighth thin film transistor T8 compensates the threshold voltage of the second thin film transistor T2, i.e., the driving thin film transistor, so that the current flowing through the organic light emitting diode D1 is independent of the threshold voltage of the second thin film transistor T2.
And the AMOLED timing control circuit reduces scanning signal lines and reference voltage signal lines and reduces the wiring inside the panel to adapt to the small-sized pixel space.
Specifically, the scan control signal line Sn has a signal of two pulses or more, including at least one pulse of the same time for all rows and one pulse of progressive scanning.
It will be apparent to those skilled in the art that various changes and modifications may be made in the embodiments of the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.

Claims (9)

1. An AMOLED timing control circuit is characterized by comprising a first thin film transistor (T1), a second thin film transistor (T2), a third thin film transistor (T3), a fourth thin film transistor (T4), a fifth thin film transistor (T5), a sixth thin film transistor (T6), a capacitor (C1) and an organic light emitting diode (D1);
a gate of the first thin film transistor (T1) is electrically connected to the scan control signal line (Sn), a first end is electrically connected to the Data signal line (Data), and a second end is electrically connected to the first node (N1);
a gate of the second thin film transistor (T2) is electrically connected to the second node (N2), a first terminal is electrically connected to the first node (N1), and a second terminal is electrically connected to the third node (N3);
a gate of the third thin film transistor (T3) is electrically connected to the scan control signal line (Sn), a first terminal is electrically connected to the second node (N2), and a second terminal is electrically connected to the third node (N3);
a gate of the fourth thin film transistor (T4) is electrically connected to the second light emitting signal line (En2), a first end of the fourth thin film transistor is electrically connected to a second end of the sixth thin film transistor (T6), and a second end of the fourth thin film transistor is electrically connected to the first node (N1);
a gate of the fifth thin film transistor (T5) is electrically connected to the second light emitting signal line (En2), a first terminal of the fifth thin film transistor is electrically connected to the third node (N3), and a second terminal of the fifth thin film transistor is electrically connected to an anode of the organic light emitting diode (D1);
a gate of the sixth thin film transistor (T6) is electrically connected to the first light emitting signal line (En1), a first terminal of the sixth thin film transistor is electrically connected to the power voltage (ELVDD), and a second terminal of the sixth thin film transistor is electrically connected to the first terminal of the fourth thin film transistor (T4);
a first end of the capacitor (C1) is electrically connected to a second node (N2); the second end is electrically connected to the power voltage (ELVDD);
the anode of the organic light emitting diode (D1) is electrically connected to the second end of the fifth thin film transistor (T5), and the cathode of the organic light emitting diode (D1) is grounded;
the second thin film transistor (T2) is a driving thin film transistor;
further comprising:
a seventh thin film transistor (T7) disposed between the second end of the first thin film transistor (T1) and the first node (N1), wherein a gate of the seventh thin film transistor (T7) is electrically connected to the second node (N2), a first end of the seventh thin film transistor is electrically connected to the second end of the first thin film transistor (T1), and a second end of the seventh thin film transistor is electrically connected to the first node (N1);
and an eighth thin film transistor (T8) disposed between the second end of the first thin film transistor (T1) and the third thin film transistor (T3), wherein a gate of the eighth thin film transistor (T8) is electrically connected to the second node (N2) and the first end of the capacitor (C1), and shares a gate with the second thin film transistor (T2), the first end is electrically connected to the second end of the first thin film transistor (T1), and the second end is electrically connected to the second end of the third thin film transistor (T3) and the third node (N3).
2. The AMOLED timing control circuit of claim 1, wherein the first thin film transistor (T1), the second thin film transistor (T2), the third thin film transistor (T3), the fourth thin film transistor (T4), the fifth thin film transistor (T5), the sixth thin film transistor (T6), the seventh thin film transistor (T7) and the eighth thin film transistor (T8) are all low temperature polysilicon thin film transistors, oxide semiconductor thin film transistors or amorphous silicon thin film transistors.
3. The AMOLED timing control circuit of claim 1, wherein the eighth TFT (T8) and the second TFT (T2) are symmetrically arranged and have the same channel width.
4. An AMOLED timing control circuit according to claim 1, wherein the input terminal of the scan control signal line (Sn), the input terminal of the first light emitting signal line (En1) and the input terminal of the second light emitting signal line (En2) are provided with connection terminals for connection with an external timing controller.
5. A method of timing control for an AMOLED timing control circuit as claimed in any one of claims 1 to 4, comprising:
entering an initialization stage, the power supply voltage (ELVDD) provides a high potential, the first light emitting signal line (En1) provides a high potential, the sixth thin film transistor (T6) is turned off, the second light emitting signal line (En2) provides a low potential, the fourth thin film transistor (T4) and the fifth thin film transistor (T5) are turned on, the voltage of the third node (N3) is equal to the voltage of the anode of the organic light emitting diode (D1), the scan control signal line (Sn) provides a low potential, the first thin film transistor (T1) and the third thin film transistor (T3) are turned on, the voltage of the second node (N2) is equal to the voltage of the anode of the organic light emitting diode (D1), the second thin film transistor (T2) is turned on, and the sixth thin film transistor (T6) is in an off state, the Data signal line (Data) is in an off state or a low potential is supplied so that no current passes through the organic light emitting diode (D1) and the organic light emitting diode (D1) does not emit light;
entering a trim phase, when the trim phase is finished, the power supply voltage (ELVDD) provides a high potential, the first light emitting signal line (En1) provides a high potential, the sixth thin film transistor (T6) is turned off, the second light emitting signal line (En2) provides a high potential, the fourth thin film transistor (T4) and the fifth thin film transistor (T5) are turned off, the organic light emitting diode (D1) does not emit light, the scan control signal line (Sn) provides a high potential, the first thin film transistor (T1) and the third thin film transistor (T3) are turned off, the voltage of the second node (N2) is maintained to be equal to the voltage of the anode of the organic light emitting diode (D1), and the second thin film transistor (T2) is turned on;
entering a Data writing phase, the power supply voltage (ELVDD) provides a high potential, the first light emitting signal line (En1) provides a high potential, the sixth thin film transistor (T6) is turned off, the second light emitting signal line (En2) provides a high potential, the fourth thin film transistor (T4) and the fifth thin film transistor (T5) are turned off, the organic light emitting diode (D1) does not emit light, the scan control signal line (Sn) provides a low potential, the first thin film transistor (T1) and the third thin film transistor (T3) are turned on, the Data signal line (Data) provides a high potential, the second node (N2) writes a voltage provided by the Data signal line (Data), and the second thin film transistor (T2) is turned off;
entering a hold phase, the power supply voltage (ELVDD) supplies a high potential, the first light emitting signal line (En1) supplies a high potential, the sixth thin film transistor (T6) is turned off, the second light emitting signal line (En2) supplies a high potential, the fourth thin film transistor (T4) and the fifth thin film transistor (T5) are turned off, the organic light emitting diode (D1) does not emit light, the scan control signal line (Sn) supplies a high potential, the first thin film transistor (T1) and the third thin film transistor (T3) are turned off, the second node (N2) holds a voltage supplied from the Data signal line (Data) written in the Data write phase, and the second thin film transistor (T2) is turned off;
in the driving phase, the scan control signal line (Sn) provides a high voltage, the first thin film transistor (T1) and the third thin film transistor (T3) are turned off, the power supply voltage (ELVDD) provides a high voltage, the first light emitting signal line (En1) provides a low voltage, the sixth thin film transistor (T6) is turned on, the second light emitting signal line (En2) provides a low voltage, the fourth thin film transistor (T4) and the fifth thin film transistor (T5) are turned on, the second thin film transistor (T2) is in an on state, and the organic light emitting diode (D1) emits light.
6. The timing control method according to claim 5,
the adjusting stage comprises:
in a first adjustment phase, the power voltage (ELVDD) provides a high voltage, the first light emitting signal line (En1) provides a high voltage, the sixth thin film transistor (T6) is turned off, the second light emitting signal line (En2) provides a low voltage, the fourth thin film transistor (T4) and the fifth thin film transistor (T5) are turned on, the scan control signal line (Sn) provides a high voltage, the first thin film transistor (T1) and the third thin film transistor (T3) are turned off, the voltage of the second node (N2) is maintained to be equal to the voltage of the anode of the organic light emitting diode (D1), the second thin film transistor (T2) is turned on, and the organic light emitting diode (D1) does not emit light;
in the second adjustment phase, the power voltage (ELVDD) provides a high potential, the first light emitting signal line (En1) provides a high potential, the sixth thin film transistor (T6) is turned off, the second light emitting signal line (En2) provides a high potential, the fourth thin film transistor (T4) and the fifth thin film transistor (T5) are turned off, the organic light emitting diode (D1) does not emit light, the scan control signal line (Sn) provides a high potential, the first thin film transistor (T1) and the third thin film transistor (T3) are turned off, the voltage of the second node (N2) is maintained to be equal to the voltage of the anode of the organic light emitting diode (D1), and the second thin film transistor (T2) is turned on.
7. The timing control method according to claim 5, wherein when the AMOLED timing control circuit includes a seventh thin film transistor (T7) and an eighth thin film transistor (T8):
in the initialization stage, the power supply voltage (ELVDD) supplies a high potential, the first light emitting signal line (En1) supplies a high potential, the sixth thin film transistor (T6) is turned off, the second light emitting signal line (En2) supplies a low potential, the fourth thin film transistor (T4) and the fifth thin film transistor (T5) are turned on, the voltage of the third node (N3) is equal to the voltage of the anode of the organic light emitting diode (D1), the scan control signal line (Sn) supplies a low potential, the first thin film transistor (T1) and the third thin film transistor (T3) are turned on, the voltage of the second node (N2) is equal to the voltage of the anode of the organic light emitting diode (D1), the second thin film transistor (T2), the seventh thin film transistor (T7) and the eighth thin film transistor (T8) are turned on, the sixth thin film transistor (T6) is in an off state, the Data signal line (Data) is in an off state, or is supplied such that a current flows through the organic light emitting diode (D1), the organic light emitting diode (D1) does not emit light;
in the trimming period, when the trimming period is finished, the power supply voltage (ELVDD) is supplied with a high potential, the first light emitting signal line (En1) is supplied with a high potential, the sixth thin film transistor (T6) is turned off, the second light emitting signal line (En2) is supplied with a high potential, the fourth thin film transistor (T4) and the fifth thin film transistor (T5) are turned off, the organic light emitting diode (D1) does not emit light, the scan control signal line (Sn) is supplied with a high potential, the first thin film transistor (T1) and the third thin film transistor (T3) are turned off, the voltage of the second node (N2) is maintained to be equal to the voltage of the anode of the organic light emitting diode (D1), and the second thin film transistor (T2), the seventh thin film transistor (T7) and the eighth thin film transistor (T8) are turned on;
in the Data writing stage, the power voltage (ELVDD) supplies a high potential, the first light emitting signal line (En1) supplies a high potential, the sixth thin film transistor (T6) is turned off, the second light emitting signal line (En2) supplies a high potential, the fourth thin film transistor (T4) and the fifth thin film transistor (T5) are turned off, the organic light emitting diode (D1) does not emit light, the scan control signal line (Sn) supplies a low potential, the first thin film transistor (T1) and the third thin film transistor (T3) are turned on, the Data signal line (Data) supplies a high potential, the eighth thin film transistor (T8) is first turned on, the voltage supplied from the Data signal line (Data) is written into the second node (N2) through the first thin film transistor (T1), the eighth thin film transistor (T8) and the third thin film transistor (T3), and when the second node (N2) is turned off after the voltage is 8- | thin film transistor T8 | 8, The second thin film transistor (T2) and the seventh thin film transistor (T7) are turned off, where Vth8 is a threshold voltage of the eighth thin film transistor (T8) and Vdata is a voltage supplied by the Data signal (Data);
in the holding period, the power supply voltage (ELVDD) supplies a high potential, the first light emitting signal line (En1) supplies a high potential, the sixth thin film transistor (T6) is turned off, the second light emitting signal line (En2) supplies a high potential, the fourth thin film transistor (T4) and the fifth thin film transistor (T5) are turned off, the organic light emitting diode (D1) does not emit light, the scan control signal line (Sn) supplies a high potential, the first thin film transistor (T1) and the third thin film transistor (T3) are turned off, the second node (N2) holds a voltage supplied from the Data signal line (Data) written in the Data writing period, and the second thin film transistor (T2), the seventh thin film transistor (T7) and the eighth thin film transistor (T8) are turned off;
in the driving phase, the scan control signal line (Sn) provides a high voltage, the first thin film transistor (T1) and the third thin film transistor (T3) are turned off, the power supply voltage (ELVDD) provides a high voltage, the first light emitting signal line (En1) provides a low voltage, the sixth thin film transistor (T6) is turned on, the second light emitting signal line (En2) provides a low voltage, the fourth thin film transistor (T4) and the fifth thin film transistor (T5) are turned on, the second thin film transistor (T2), the seventh thin film transistor (T7) and the eighth thin film transistor (T8) are turned on, and the organic light emitting diode (D1) emits light.
8. The timing control method according to claim 5, wherein when the AMOLED timing control circuit includes a sixth thin film transistor (T6) and a seventh thin film transistor (T7):
the adjusting stage comprises:
in the first adjustment phase, the power voltage (ELVDD) provides a high potential, the first light emitting signal line (En1) provides a high potential, the sixth thin film transistor (T6) is turned off, the second light emitting signal line (En2) provides a low potential, the fourth thin film transistor (T4) and the fifth thin film transistor (T5) are turned on, the scan control signal line (Sn) provides a high potential, the first thin film transistor (T1) and the third thin film transistor (T3) are turned off, the voltage of the second node (N2) is maintained to be equal to the voltage of the anode of the organic light emitting diode (D1), the second thin film transistor (T2), the seventh thin film transistor (T7) and the eighth thin film transistor (T8) are turned on, and the organic light emitting diode (D1) does not emit light;
in the second adjustment phase, the power voltage (ELVDD) provides a high potential, the first light emitting signal line (En1) provides a high potential, the sixth thin film transistor (T6) is turned off, the second light emitting signal line (En2) provides a high potential, the fourth thin film transistor (T4) and the fifth thin film transistor (T5) are turned off, the organic light emitting diode (D1) does not emit light, the scan control signal line (Sn) provides a high potential, the first thin film transistor (T1) and the third thin film transistor (T3) are turned off, the voltage of the second node (N2) is maintained to be equal to the voltage of the anode of the organic light emitting diode (D1), and the second thin film transistor (T2), the seventh thin film transistor (T7) and the eighth thin film transistor (T8) are turned on.
9. The timing control method according to claim 5, wherein the scan control signal line (Sn) has a signal of two pulses or more, including at least one pulse of the same time for all rows and one pulse of progressive scanning.
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