CN110320596A - Fiber waveguide device and preparation method thereof - Google Patents
Fiber waveguide device and preparation method thereof Download PDFInfo
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- CN110320596A CN110320596A CN201810270051.4A CN201810270051A CN110320596A CN 110320596 A CN110320596 A CN 110320596A CN 201810270051 A CN201810270051 A CN 201810270051A CN 110320596 A CN110320596 A CN 110320596A
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- flat part
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- grating
- raised line
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/124—Geodesic lenses or integrated gratings
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
- G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction in an optical waveguide structure
Abstract
The embodiment of the invention provides a kind of fiber waveguide devices and preparation method thereof, the fiber waveguide device includes: substrate, ridge waveguide, the grating being set in turn on substrate, wherein, ridge waveguide includes the first flat part arranged in the first direction, the second flat part, and the raised line for being set between the first flat part and the second flat part and connecting with the first flat part and the second flat part；Raised line is higher than the first flat part and the second flat part in a second direction, and second direction is perpendicular to first direction；Grating is set to raised line back to the side of substrate, and/or, grating is set in the first flat part and the second flat part at least one flat part adjacent raised line.The embodiment of the present invention on ridge waveguide by forming grating, so that grating waveguide characteristic is presented in ridge waveguide, by grating to slow light effect caused by light carrier, improves modulation efficiency.
Description
Technical field
The present invention relates to technical field of semiconductors more particularly to a kind of fiber waveguide device and preparation method thereof.
Background technique
Fiber waveguide device, such as electrooptic modulator, are one of optical interconnection, the core devices in optical communication, for by telecommunications
Number it is changed into optical signal.Electrooptic modulator can constitute one completely with laser, detector and other wavelength division multiplex devices
Functional transfer module is widely used in data center, backbone network.
Silicon-based electro-optical modulator a variety of silicon substrates, mixing silicon substrate, such as insulating substrate on silicon (Silicon-On-
Insulator, SOI) on realize.Silicon-based electro-optical modulator uses the modulation mechanism of plasma dispersion effect, i.e. applied voltage changes
Carrier concentration realizes the modulation of phase so as to cause the variation of waveguide effective index in change waveguide.Wherein, carrier consumes
Type silicon-based electro-optical modulator is using more modulator, it can be achieved that High Speed Modulation to the greatest extent, but modulation efficiency is lower.
Summary of the invention
The embodiment of the invention provides a kind of fiber waveguide devices and preparation method thereof, can be improved the modulation of fiber waveguide device
Efficiency.
In a first aspect, fiber waveguide device includes: substrate the embodiment of the invention provides a kind of fiber waveguide device, successively set
The ridge waveguide and grating being placed on substrate, wherein
Ridge waveguide includes the first flat part arranged in the first direction, the second flat part, and is set to the first plate
The raised line being connect between portion and the second flat part and with the first flat part and the second flat part；Raised line is higher than in a second direction
One flat part and the second flat part；Second direction is perpendicular to first direction；
Ridge waveguide includes: across raised line and the first flat part and with the first doped region of P-type conductivity；And across raised line
With the second flat part and with the second doped region of N-type conductivity；The PN junction that first doped region and the second doped region abut to form；
Grating is set to raised line back to the side of substrate.
In the embodiment of the present invention, by forming grating on the raised line of ridge waveguide, so that grating wave is presented in ridge waveguide
Characteristic is led, by grating to slow light effect caused by light carrier, improves modulation efficiency.
Moreover, accurately to realize that grating to the slow light effect of specific wavelength light carrier, is needed when preparing grating to light
Grid cycle, duty ratio, height etc. are designed.In the preparation process angle of grating, formed above raised line grating in technique
Than on the first flat part and/or the second flat part, the position of adjacent raised line is easier to realize in realization, can preferably control light
The structure of grid.
In one possible implementation, grating includes the grating minor structure along the setting of third direction periodic intervals；
Third direction is respectively perpendicular to first direction, second direction.
In the embodiment of the present invention, by designing the period of grating minor structure, grating is may be implemented to specific wavelength in duty ratio
The slow light effect of light carrier.
In another possible implementation, the refractive index of grating is not more than the refractive index of raised line, and then reduces grating
Absorption to light carrier in ridge waveguide.
In another possible implementation, grating along first direction width with raised line along the width phase of first direction
Together.
In another possible implementation, the material of grating is insulating materials, reduces grating to current-carrying in optical waveguide
The influence of son distribution.
Optionally, insulating layer material can be at least one of silicon nitride, silicon oxynitride, germanium nitride, germanium oxynitride etc..
In another possible implementation, the height in a second direction of grating is 50nm-500nm.
In another possible implementation, the interface of PN junction is perpendicular to first direction；First doped region edge in raised line
The width of first direction is equal to the width along first direction of the second doped region in raised line.
In another possible implementation, fiber waveguide device further includes under being set between substrate and ridge waveguide
Covering.
Optionally, which further includes the top covering for covering ridge waveguide and grating.
Optionally, the refractive index of grating is not less than the refractive index of top covering.
Optionally, the first flat part further includes adjacent first doped region and the third doped region with P-type conductivity；Second
Flat part further includes adjacent second doped region and the 4th doped region with N-type conductivity；The conductivity of third doped region is greater than
The conductivity of first doped region, the conductivity of the 4th doped region are greater than the conductivity of the second doped region.
Optionally, which further includes that the first via hole by being set on top covering is electrically connected with third doped region
The first electrode connect；And the second electrode that the second via hole by being set on top covering is electrically connected with the 4th doped region.
In another possible implementation, the height of the first flat part in a second direction be 50nm-210nm, second
The height of flat part in a second direction is 50nm-210nm；The height of raised line in a second direction is 220nm-340nm, and raised line is along the
The width in one direction is 300nm-700nm.
In another possible implementation, fiber waveguide device is silicon-based optical waveguide device, the doping of the first doped region
Concentration is 1 × 1017cm-3-2×1018cm-3；The doping concentration of second doped region is 1 × 1017cm-3-2×1018cm-3；Third is mixed
The doping concentration in miscellaneous area is 1 × 1019cm-3-5×1020cm-3。
Second aspect, the embodiment of the invention provides a kind of fiber waveguide device, which includes: substrate, successively
The ridge waveguide and grating being set on substrate, wherein
Ridge waveguide includes the first flat part arranged in the first direction, the second flat part, and is set to the first plate
The raised line being connect between portion and the second flat part and with the first flat part and the second flat part；Raised line is higher than in a second direction
One flat part and the second flat part；Second direction is perpendicular to first direction；
Ridge waveguide includes: across raised line and the first flat part and with the first doped region of P-type conductivity；And across raised line
With the second flat part and with the second doped region of N-type conductivity；The PN junction that first doped region and the second doped region abut to form；
Grating is set at least one flat part in the first flat part and the second flat part adjacent raised line.
In the embodiment of the present invention, by forming grating on the flat part of ridge waveguide, so that grating is presented in ridge waveguide
Guide properties improve modulation efficiency by grating to slow light effect caused by light carrier.
Moreover, accurately to realize that grating to the slow light effect of specific wavelength light carrier, is needed when preparing grating to light
Grid cycle, duty ratio, height etc. are designed.
In one possible implementation, the grating includes the grating knot along the setting of third direction periodic intervals
Structure；The third direction is respectively perpendicular to the first direction, the second direction.
In the embodiment of the present invention, by designing the period of grating minor structure, grating is may be implemented to specific wavelength in duty ratio
The slow light effect of light carrier.
In another possible implementation, the refractive index of the grating is not more than the refractive index of the raised line, in turn
Reduce absorption of the grating to light carrier in ridge waveguide.
In another possible implementation, the material of the grating is insulating materials, to reduce grating to optical waveguide
The influence of middle Carrier Profile.
Optionally, insulating layer material can be at least one of silicon nitride, silicon oxynitride, germanium nitride, germanium oxynitride etc..
In another possible implementation, the height along the second direction of the grating is 50nm-500nm.
In another possible implementation, the interface of PN junction is perpendicular to first direction；First doped region edge in raised line
The width of first direction is equal to the width along first direction of the second doped region in raised line.
In another possible implementation, fiber waveguide device further includes under being set between substrate and ridge waveguide
Covering.
Optionally, which further includes the top covering for covering ridge waveguide and grating.
Optionally, the refractive index of grating is not less than the refractive index of top covering.
Optionally, the first flat part further includes adjacent first doped region and the third doped region with P-type conductivity；Second
Flat part further includes adjacent second doped region and the 4th doped region with N-type conductivity；The conductivity of third doped region is greater than
The conductivity of first doped region, the conductivity of the 4th doped region are greater than the conductivity of the second doped region.
Optionally, which further includes that the first via hole by being set on top covering is electrically connected with third doped region
The first electrode connect；And the second electrode that the second via hole by being set on top covering is electrically connected with the 4th doped region.
In another possible implementation, the height of the first flat part in a second direction be 50nm-210nm, second
The height of flat part in a second direction is 50nm-210nm；The height of raised line in a second direction is 220nm-340nm, and raised line is along the
The width in one direction is 300nm-700nm.
In another possible implementation, fiber waveguide device is silicon-based optical waveguide device, the doping of the first doped region
Concentration is 1 × 1017cm-3-2×1018cm-3；The doping concentration of second doped region is 1 × 1017cm-3-2×1018cm-3；Third is mixed
The doping concentration in miscellaneous area is 1 × 1019cm-3-5×1020cm-3。
The third aspect, the embodiment of the invention provides a kind of fiber waveguide device preparation methods, this method comprises:
One substrate is provided；The surface layer of substrate is semiconductor layer；
Patterned semiconductor layer arranges the first flat part, the second flat part along first direction and is set to the to be formed
The raised line being connect between one flat part and the second flat part and with the first flat part and the second flat part；Raised line is in a second direction
Higher than the first flat part and the second flat part；Second direction is perpendicular to first direction；
First doped region with P-type conductivity is formed in the side of the first flat part and adjacent first flat part of raised line,
Second doped region with N-type conductivity, the first doping are formed in the side of the second flat part and adjacent second flat part of raised line
Area and the second doped region abut to form PN junction；
Grating is formed back to the side of substrate in raised line；Or, at least one of the first flat part and the second flat part
Adjacent raised line forms grating on flat part.
In the embodiment of the present invention, by forming grating on ridge waveguide, so that grating waveguide characteristic is presented in ridge waveguide,
By grating to slow light effect caused by light carrier, modulation efficiency is improved.
Moreover, accurately to realize that grating to the slow light effect of specific wavelength light carrier, is needed when preparing grating to light
Grid cycle, duty ratio, height etc. are designed.In the preparation process angle of grating, formed above raised line grating in technique
Than on the first flat part and/or the second flat part, the position of adjacent raised line is easier to realize in realization, can preferably control light
The structure of grid.
In one possible implementation, raised line can be with back to a kind of embodiment that the side of substrate forms grating
It is:
Insulating layer is formed back to the side of substrate in raised line；
Patterned insulation layer forms the grating minor structure being arranged along third direction periodic intervals；Third direction is respectively perpendicular
In first direction, second direction.
It is appreciated that accurately to realize slow light effect of the grating to specific wavelength light carrier, the needs when preparing grating
Screen periods, duty ratio, height etc. are designed.In the preparation process angle of grating, formed above raised line grating
Technique realizes that the position than raised line adjacent on the first flat part and/or the second flat part is easier to realize, can preferably control
The structure of grating processed.
In another possible implementation, at least one flat part in the first flat part and the second flat part
A kind of embodiment that adjacent raised line forms grating may is that
Adjacent raised line forms insulating layer on the first flat part and/or the second flat part；
Patterned insulation layer forms the grating minor structure being arranged along third direction periodic intervals；Third direction is respectively perpendicular
In first direction, second direction.
In another possible implementation, the refractive index of grating is not more than the refractive index of raised line.
In another possible implementation, raised line back to substrate side formed grating along first direction width
Degree and raised line are along the of same size of first direction.
In another possible implementation, the material of grating is insulating materials.
Optionally, insulating layer material can be at least one of silicon nitride, silicon oxynitride, germanium nitride, germanium oxynitride etc..
In another possible implementation, the height in a second direction of grating is 50nm-500nm.
In another possible implementation, the interface of PN junction is perpendicular to first direction；First doped region edge in raised line
The width of first direction is equal to the width along first direction of the second doped region in raised line.
In another possible implementation, preparation method further include:
Adjacent first doped region and the third doped region with P-type conductivity are formed on the first flat part；It is flat second
Adjacent second doped region and the 4th doped region with N-type conductivity are formed in plate portion；
Wherein, the conductivity of third doped region is greater than the conductivity of the first doped region, and the conductivity of the 4th doped region is greater than
The conductivity of second doped region.
Optionally, method further include:
The top covering of semiconductor layer and grating after forming covering doping；
The first via hole and the second via hole are opened up on top covering, the first via hole is for exposing third doped region, the second via hole
For exposing the 4th doped region；
Top covering back to substrate side formed conductive layer, conductive layer by the first via hole be electrically connected third doped region with
And the 4th doped region is electrically connected by the second via hole；
Patterned conductive layer forms spaced first electrode and second electrode；First electrode is electrically connected third doping
Area, second electrode are electrically connected the 4th doped region.
In another possible implementation, the height of the first flat part in a second direction be 50nm-210nm, second
The height of flat part in a second direction is 50nm-210nm；The height of raised line in a second direction is 220nm-340nm, and raised line is along the
The width in one direction is 300nm-700nm.
In another possible implementation, fiber waveguide device is silicon-based optical waveguide device, the doping of the first doped region
Concentration is 1 × 1017cm-3-2×1018cm-3；The doping concentration of second doped region is 1 × 1017cm-3-2×1018cm-3；Third is mixed
The doping concentration in miscellaneous area is 1 × 1019cm-3-5×1020cm-3。
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described.
Fig. 1 is a kind of diagrammatic cross-section of ridge waveguide provided in an embodiment of the present invention；
Fig. 2 is the diagrammatic cross-section of another ridge waveguide provided in an embodiment of the present invention；
Fig. 3 is a kind of top view for corresponding to ridge waveguide shown in Fig. 2 provided in an embodiment of the present invention；
Fig. 4 is the structural schematic diagram of another ridge waveguide provided in an embodiment of the present invention；
Fig. 5 A is a kind of diagrammatic cross-section of fiber waveguide device provided in an embodiment of the present invention；
Fig. 5 B is the top view of fiber waveguide device shown in a kind of corresponding diagram 5A provided in an embodiment of the present invention；
Fig. 6 A is the diagrammatic cross-section of another fiber waveguide device provided in an embodiment of the present invention；
Fig. 6 B is the top view of fiber waveguide device shown in a kind of corresponding diagram 6A provided in an embodiment of the present invention；
Fig. 7 A is the diagrammatic cross-section of another fiber waveguide device provided in an embodiment of the present invention；
Fig. 7 B is the top view of fiber waveguide device shown in a kind of corresponding diagram 7A provided in an embodiment of the present invention；
Fig. 8 is a kind of flow diagram of fiber waveguide device preparation method provided in an embodiment of the present invention；
Fig. 9 A-9J is that the embodiment of the present invention provides each process in fiber waveguide device preparation method corresponding section signal
Figure.
Specific embodiment
The technical solution in the prior art or the embodiment of the present invention is clearly and completely retouched below in conjunction with attached drawing
It states.
The diagrammatic cross-section of Fig. 1, ridge waveguide shown in Fig. 2 are please referred to, Fig. 1 describes ridge waveguide from structural point,
The ridge waveguide includes: the first flat part 11 arranged in the first direction, the second flat part 12, and to be set to described first flat
The raised line being connect between plate portion 11 and second flat part 12 and with first flat part 11 and second flat part 12
13；The height h of the raised line 13 in a second direction1Higher than the height h of first flat part 11 in a second direction2And institute
State the height h of the second flat part 12 in a second direction3.Second direction is perpendicular to the first direction.
It should be noted that first direction, second direction, third direction are orthogonal three directions.In general, ridge
Waveguide is set on substrate or is set on the under-clad layer 3 on substrate, and therefore, first direction is parallel to the surface of substrate.
Optionally, the height (the also referred to as height of raised line 13) along the second direction of raised line 13 is respectively greater than the first plate
The height (the also referred to as height of the first flat part 11) in a second direction of portion 11 and the second flat part 12 in a second direction
Highly (the also referred to as height of the second flat part 12).Optionally, the height of the first flat part 11 is 50nm-210nm；Second flat part
12 height is 50nm-210nm, is greater than the height and second flat part 12 of the first flat part 11 in the height for meeting raised line 13
Under the premise of height, the height of raised line 13 can be 220nm-340nm.First flat part 11, the second flat part 12 or raised line 13
Height can also be other numerical value, the present invention is not construed as limiting.
Optionally, the height h of the first flat part 112With the height h of second flat part 123It can be equal.Such as Fig. 1 institute
The ridge waveguide 1 shown.
Optionally, the first flat part 11 can be along the width (the also referred to as width of the first flat part 11) of first direction
100nm-700nm, the first flat part 11 can be 100nm- along the width (the also referred to as width in the second plate area) of first direction
700nm, raised line 13 can be 300nm-700nm along the width of the first direction.First flat part 11, the second flat part 12 or
The width of raised line 13 can also be other numerical value, and the present invention is not construed as limiting.Optionally, the width of the first flat part 11 is equal to second
The width of flat part 12, ridge waveguide 1 as shown in Figure 1.
It should be noted that, although ridge waveguide 1 has divided the first flat part 11, the second flat part 12 and convex in Fig. 1
Item 1313, ridge waveguide 1 can be integrated structure.
Fig. 2 describes ridge waveguide 1 from constituent angle, which includes: across the raised line 13 and described
One flat part 11 and first doped region 101 with P-type conductivity；And across the raised line 13 and second flat part 12 and
The second doped region 102 with N-type conductivity；The PN that first doped region 101 is abutted to form with second doped region 102
Knot.
For the interface of PN junction in ridge waveguide shown in Fig. 2, the i.e. company of the first doped region 101 and the second doped region 102
Junction can be with plane, which can form the first angle perpendicular to first direction or with first direction；It can also be with
Folding face, part face forms the second angle perpendicular to first direction or with first direction, part face perpendicular to third direction or with
Third direction forms third angle.Optionally, the first angle is greater than arctan (h1/d1) and be less than π-arctan (h1/d1).Its
In, d1For the length (the also referred to as width of raised line 13) of raised line 13 in a first direction.
For example, referring to Fig. 3, Fig. 3 is a kind of top view of corresponding ridge waveguide shown in Fig. 2, ridge shown in Fig. 3
In waveguide, the interface of PN junction is perpendicular to the first direction.First doped region 101 is equal to along the width of first direction in raised line 13
The width along first direction of second doped region 102 in raised line 13.
It should be noted that in raised line 13 first doped region 101 can also be more than or less than along the width of first direction it is convex
The width along first direction of second doped region 102, the present invention are not construed as limiting in item 13.
In another example referring to Fig. 4, Fig. 4 is the structural schematic diagram of another ridge waveguide provided in an embodiment of the present invention, figure
A figure is the top view of the ridge waveguide in 4.The section that ridge waveguide shown in B figure can be obtained along A figure vertical center line progress flat cutting shows
It is intended to.For ridge waveguide shown in Fig. 4, the interface portion facet of PN junction is perpendicular to first direction, and part face is perpendicular to third party
To.
It is appreciated that PN junction can also be other forms, the present invention is without limitation.
In one embodiment of the invention, first flat part 11 further includes adjacent first doped region 101 and has p-type
The third doped region 103 of electric conductivity；Second flat part 12 further includes adjacent second doped region 102 and leads with N-type
The 4th electrical doped region 104；The conductivity of the third doped region 103 is greater than the conductivity of first doped region 101, institute
The conductivity for stating the 4th doped region 104 is greater than the conductivity of second doped region 102.
Optionally, the fiber waveguide device is silicon-based optical waveguide device, and the doping concentration of first doped region 101 can be with
It is 1 × 1017cm-3-2×1018cm-3；The doping concentration of second doped region 102 can be 1 × 1017cm-3-2×1018cm-3；The doping concentration of the third doped region 103 can be 1 × 1019cm-3-5×1020cm-3, the 4th doped region 104
Doping concentration can be 1 × 1019cm-3-5×1020cm-3。
For example, the first doped region 101 be in monocrystalline silicon or polysilicon inject trivalent boron, doping concentration be 5 ×
1017cm-3；Second doped region 102 is the phosphorus P that 5 valences are injected in monocrystalline silicon or polysilicon, and doping concentration is 5 × 1017cm-3；The
Three doped regions 103 are the boron that trivalent is injected in monocrystalline silicon or polysilicon, and doping concentration is 5 × 1019cm-3；4th doped region
104 be the phosphorus P that 5 valences are injected in monocrystalline silicon or polysilicon, and doping concentration is 5 × 1019cm-3。
In the embodiment of the present invention, the first doped region 101 of ridge waveguide or the both ends of the second doped region 102 apply reversed electricity
Pressure, so that PN picks out existing depletion region, the concentration of the difference of backward voltage, depletion region carriers is different, and then leads to depletion region
The variation of interior refractive index, to realize the phase, amplitude, intensity of light carrier and the modulation of polarization state in the depletion region.
Please refer to Fig. 5 A, Fig. 6 A, the diagrammatic cross-section of fiber waveguide device shown in Fig. 7 A and Fig. 5 B, Fig. 6 B, shown in Fig. 7 B
Grating 4 and the positional relationship of ridge waveguide schematically illustrate figure.Fig. 5 B, Fig. 6 B, Fig. 7 B are to respectively correspond 5A, Fig. 6 A, figure
The top view of grating 4 and ridge waveguide in fiber waveguide device shown in 7A.
It should be noted that fiber waveguide device can be electrooptic modulator in each embodiment of the present invention, can also be used as
One or more modulation wall (also referred to as side wall) of electrooptic modulator are applied to Electro-optical Modulation.Electrooptic modulator will by the modulation wall
Electric signal is changed into optical signal.Electrooptic modulator can be silicon substrate MZI electrooptical modulator, MRR structure electrooptic modulator etc., this hair
It is bright to be not construed as limiting.It is appreciated that including fiber waveguide device described in the embodiment of the present invention (modulation wall) when electrooptic modulator removes
It can also include outside beam splitter, waveguide etc., the present invention is not construed as limiting.
In the application, fiber waveguide device may include: substrate 2, under-clad layer 3, the ridge being set in turn on the substrate 2
Waveguide 1, grating 4 and top covering 5, in which:
Substrate 2, under-clad layer 3 and ridge waveguide 1 can be prepared by SOI, and SOI may include top layer silicon and bottom
Buries oxide layer between silicon and top layer silicon and bottom silicon, it will be understood that bottom silicon is substrate 2 in the application, and buying oxide layer is
Under-clad layer 3 in the application, top layer silicon by patterning, doping and etc. formed ridge waveguide 1.
Ridge waveguide 1 can be arbitrary a kind of in above-mentioned ridge waveguide.
In one embodiment of the invention, grating 4 is set to the raised line 13 back to the side of the substrate 2.
It is appreciated that grating 4 is along described first if the raised line 13 is arranged in back on the side of the substrate 2 in grating 4
The width in direction is no more than raised line 13 along the of same size of the first direction.
Optionally, the grating 4 along the first direction width and the raised line 13 along the first direction width
It is identical.
For example, with reference to Fig. 5 A, fiber waveguide device shown in 5B, the interface of PN junction is perpendicular to first direction；Institute in raised line 13
State the first doped region 101 along the first direction width be equal to raised line 13 described in the second doped region 102 along described first
The width in direction.Grating 4 is set to raised line 13 back to the side of substrate 2, and grating 4 is equal to 13 edge of raised line along the width of first direction
The width of first direction.
Optionally, when electric signal is accessed in the two sides of PN junction in ridge waveguide 1, the depletion region formed in ridge waveguide 1 is adjacent
Grating 4 is connect, enhancing grating 4 improves modulation efficiency to the slow light effect of light in ridge waveguide.
It is appreciated that ridge waveguide can also be the ridge waveguide of other forms, for example, ridge waveguide shown in Fig. 41.
In another embodiment of the present invention, grating 4 is set at least one in first flat part 11 and the second flat part 12
The adjacent raised line 13 on a flat part.Such as the ridge waveguide of Fig. 6 A.Optionally, when electricity is accessed in the two sides of PN junction in ridge waveguide
When signal, the adjacent grating 4 of the depletion region formed in ridge waveguide, enhancing grating 4 improves the slow light effect of light in ridge waveguide
Modulation efficiency.
It is appreciated that the height (the also referred to as height of grating 4) of grating 4 in a second direction can be more than or less than raised line 13
The difference of height and the height of the first flat layer 11 or the second flat layer 12；Optionally, the height of grating 4 is equal to the height of raised line 13
And the difference of the height of the first flat layer 11 or the second flat layer 12, the present invention are not construed as limiting.
In further embodiment of this invention, 4 part of grating is set to raised line 13 back to the side of the substrate 2, and part is arranged
In the raised line 13 adjacent on the first flat part 11 and/or the second flat part 12.Such as the ridge waveguide of Fig. 7 A.Optionally, work as ridge
When electric signal is accessed in the two sides of PN junction in type waveguide, the adjacent grating 4 of the depletion region formed in ridge waveguide enhances grating 4 to ridge
The slow light effect of light in type waveguide improves modulation efficiency.
Optionally, grating 4 includes the grating minor structure 41 along the setting of third direction periodic intervals；Third direction hangs down respectively
Directly in the first direction, the second direction.Please refer to the position of Fig. 5 B, Fig. 6 B, grating 4 and ridge waveguide shown in Fig. 7 B
Relationship schematically illustrates figure.
It is appreciated that due to the presence of grating 4, so that the characteristic of 4 waveguide of grating is presented in ridge waveguide, that is, in optical transport
There are forbidden bands in frequency spectrum, and when the frequency spectrum of light carrier is in forbidden band edge, the group index of waveguide increases, and slow light effect occur,
The modulation efficiency in this time is bigger.In the preparation process of fiber waveguide device, can by optimize grating minor structure 41 length,
Spacing of the width of grating minor structure 41 and two neighboring grating minor structure 41 etc. changes the duty ratio of grating 4, period, in turn
Optimize the spectrum width and spectrum position of forbidden band, to meet fiber waveguide device to the slow light effect of the light carrier of specific wavelength.It can
To understand, the duty ratio of grating 4 is the ratio of the length of grating minor structure 41 and the spacing of two neighboring grating minor structure 41.Phase
The spacing of adjacent two grating minor structures 41 is the period of grating 4.
Moreover, be accurately realization grating 4 to the slow light effect of specific wavelength light carrier, the needs pair when preparing grating 4
4 period of grating, duty ratio, height etc. are designed.In the preparation process angle of grating 4, grating 4 is formed above raised line 13
Position in technique realization than raised line 13 adjacent on the first flat part 11 and/or the second flat part 12 is easier realization, can
Preferably control the structure of grating 4.
Optionally, the refractive index of grating 4 is not less than the refractive index of top covering 53, and the refractive index of grating 4 is not more than raised line 13
Refractive index.
It is appreciated that grating 4 is along described first if the raised line 13 is arranged in back on the side of the substrate 2 in grating 4
The width in direction is no more than raised line 13 along the of same size of the first direction.Optionally, the grating 4 is along the first direction
Width with the raised line 13 along the of same size of the first direction.
Optionally, the material of the grating 4 can be insulating materials, and optionally, which may include but unlimited
In at least one of silicon nitride, silicon oxynitride, germanium nitride, germanium oxynitride etc..
Optionally, the height in a second direction of grating 4 is 50nm-500nm.
In one embodiment of the invention, fiber waveguide device further includes first electrode 6 and second electrode 7, wherein first electrode 6
It is electrically connected by the first via hole 51 being set on the top covering 5 with the third doped region 103；Second electrode 7 is by setting
The second via hole 52 being placed on the top covering 5 is electrically connected with the 4th doped region 104.In the embodiment of the present invention, optical waveguide
The electric signal for being connected to 7 both ends of first electrode 6 and second electrode can be changed into optical signal by device.
Optionally, first electrode 6 or second electrode 7 are to be prepared by conductive material, which can be oxidation
Indium tin (Indium tin oxide, ITO), indium zinc oxide (IndiumZincOxide, IZO), graphene, metal or metal close
Gold etc., for example, first electrode 6 or second electrode 7 are silver Ag, gold Au, palladium Pd, platinum Pt, nickel, copper Cu, aluminium Al etc. or above-mentioned gold
The alloy etc. of the alloy of category or above-mentioned metal and other metals, the present invention is not construed as limiting.
It should be noted that top covering 5 and under-clad layer 3 are for protecting ridge waveguide, the refraction of top covering 5 or under-clad layer 3
Rate is less than the refractive index of ridge waveguide, and top covering 5 or under-clad layer 3 can be silica (SiO2), silicon nitride (SiNx) etc..
It should also be noted that, although Fig. 5 A, 6A, 7A describe under-clad layer 3, third doped region 103, the 4th doped region
104, top covering 5, first electrode 6 and second electrode 7, it is to be understood that under-clad layer 3, third doped region the 103, the 4th adulterate
Area 104, top covering 5, first electrode 6 and second electrode 7 are not the necessary component part of fiber waveguide device, and fiber waveguide device can
Not include in under-clad layer 3, third doped region 103, the 4th doped region 104, top covering 5, first electrode 6, second electrode 7 etc.
It is one or more.Fiber waveguide device can also include other structures, and the present invention is not construed as limiting.
Compared with the existing technology, in the embodiment of the present invention, by the way that 4 knot of grating is arranged on the middle raised line 13 of ridge waveguide
Slow light effect may be implemented in structure, improves the group index of ridge waveguide, to improve the modulation efficiency of electrooptic modulator.
Moreover, be accurately realization grating 4 to the slow light effect of specific wavelength light carrier, the needs pair when preparing grating 4
4 period of grating, duty ratio, height etc. are designed.In the preparation process angle of grating 4, grating 4 is formed above raised line 13
Position in technique realization than raised line 13 adjacent on the first flat part 11 and/or the second flat part 12 is easier realization, can
Preferably control the structure of grating 4.
Referring to Fig. 8, Fig. 8 is a kind of process signal of the preparation method of fiber waveguide device provided in an embodiment of the present invention
Figure, also referring to preparation flow schematic diagram shown in Fig. 9 A-9J.The preparation method of the fiber waveguide device may include but unlimited
In following part or all of step:
Step S81: a substrate 8 is provided；The surface layer of the substrate 8 is intrinsic semiconductor layer 9.
Wherein, substrate 8 can be SOI wafer or chip etc., and optionally, the bottom of the substrate 8 is silicon substrate 2, silicon lining
Under-clad layer 3 is set on bottom 2, intrinsic semiconductor layer 9 is set on under-clad layer 3.Also referring to Fig. 9 A.
Wherein, under-clad layer 3 can be SiO2、SiNxEqual insulating materials.It can be during forming SOI wafer or chip
Form the insulating layer.
Step S82: patterning the intrinsic semiconductor layer 9, arranges the first flat part, second flat along first direction to be formed
Plate portion and be set between first flat part and second flat part and with first flat part and described second
The raised line of flat part connection；The raised line is higher than first flat part and second flat part in a second direction；It is described
Second direction is perpendicular to the first direction.Also referring to Fig. 9 B.
Wherein, patterning refers to patterning processes, can be photoetching process.Specifically, it can be coated in intrinsic semiconductor layer 9
One layer photoresist passes through the light shield Partial exposure photoresist, the photoresist layer helped to change by developer solution formation figure, with patterned
First photoresist layer is exposure mask by etching removal part intrinsic semiconductor layer 9, forms structure as shown in Figure 9 B.
Optionally, first flat part is 50nm-210nm, second flat part along the height of the second direction
Height along the second direction is 50nm-210nm；The raised line is 220nm-340nm, institute along the height of the second direction
It is 300nm-700nm that raised line, which is stated, along the width of the first direction.
Step S83: being formed in the side of first flat part and adjacent first flat part of the raised line has p-type
First doped region 101 of electric conductivity is formed in the side of second flat part and adjacent second flat part of the raised line
The second doped region 102 with N-type conductivity, first doped region 101 and second doped region 102 abut to form PN
Knot.Also referring to 9C.
Specifically, it can first carry out carrying out trivalent ion note to the part raised line of the first flat part and adjacent first flat part
The first doped region of formation 101 entered, then 5 valence ion implantings are carried out to the part raised line of the second flat part and adjacent second flat part
The second doped region of formation 102.Similarly, the second doped region 102 can also be initially formed and re-form the first doped region 101, the present invention
It is not construed as limiting.After injecting ion, thermal annealing technology can use, to the first doped region 101 and second of ion implanted mistake
Doped region 102 carries out electrical activation and DIFFUSION TREATMENT.So far, ridge light guide is formed.
Step S84: grating 4 is formed back to the side of the substrate in the raised line；And/or in first flat part
Grating 4 is formed with the raised line is abutted in the second flat part at least one flat part.
Wherein, it may is that back to a kind of embodiment that the side of the substrate forms grating 4 described in the raised line
Raised line forms insulating layer back to the side of the substrate；The insulating layer is patterned to be formed in the side of raised line back to the substrate
Along the grating minor structure 41 of third direction periodic intervals setting.Also referring to Fig. 9 D.Wherein, the third direction hangs down respectively
Directly in the first direction, the second direction.The structure and grating 4 and the positional relationship of ridge waveguide of grating 4 are seen
Fig. 5 B.
Wherein, the adjacent raised line forms light at least one flat part in first flat part and the second flat part
A kind of embodiment of grid 4 may is that the adjacent raised line forms insulation on first flat part and/or the second flat part
Layer；The insulating layer adjacent raised line on the first flat part and/or the second flat part is patterned to be formed along third direction periodicity
Spaced grating minor structure 41.Also referring to Fig. 9 E.Wherein, the third direction is respectively perpendicular to the first party
To, the second direction.The structure and grating 4 of grating 4 and the positional relationship of ridge waveguide see Fig. 6 B.
It is appreciated that the grating 4 formed can be formed in the different location of ridge light guide.The position of grating 4 and ridge waveguide
The relationship of setting can include but is not limited to the positional relationship of grating 4 and ridge waveguide in the fiber waveguide devices such as above-mentioned Fig. 5 A, 6A, 7A,
It specifically may refer to above-mentioned Fig. 5 A, associated description in 6A, 7A, the present invention is not repeating.
Optionally, the height along the second direction of the grating 4 can be 50nm-500nm.
Optionally, the material of grating 4 is insulating materials.Optionally, insulating materials can be silicon nitride, silicon oxynitride, nitrogen
Change at least one of germanium, germanium oxynitride etc..
Optionally, the refractive index of the grating 4 is not more than the refractive index of the raised line.
Optionally, the raised line back to the substrate side formed grating 4 along the first direction width with
The raised line is of same size along the first direction.
In one embodiment of the invention, after step S82, before step S84, the preparation method of the fiber waveguide device may be used also
To include:
Adjacent first doped region 101 is formed on first flat part and the third with P-type conductivity is adulterated
Area 103；Adjacent second doped region 102 and the 4th doped region with N-type conductivity are formed on second flat part
104。
Wherein, the conductivity of the third doped region 103 be greater than first doped region 101 conductivity, the described 4th
The conductivity of doped region 104 is greater than the conductivity of second doped region 102.
Optionally, the fiber waveguide device is silicon-based optical waveguide device, and the doping concentration of first doped region 101 can be with
It is 1 × 1017cm-3-2×1018cm-3；The doping concentration of second doped region 102 can be 1 × 1017cm-3-2×1018cm-3；The doping concentration of the third doped region 103 can be 1 × 1019cm-3-5×1020cm-3, the 4th doped region 104
Doping concentration can be 1 × 1019cm-3-5×1020cm-3。
For example, the first doped region 101 be in monocrystalline silicon or polysilicon inject trivalent boron, doping concentration be 5 ×
1017cm-3；Second doped region 102 is the phosphorus P that 5 valences are injected in monocrystalline silicon or polysilicon, and doping concentration is 5 × 1017cm-3；The
Three doped regions 103 are the boron that trivalent is injected in monocrystalline silicon or polysilicon, and doping concentration is 5 × 1019cm-3；4th doped region
104 be the phosphorus P that 5 valences are injected in monocrystalline silicon or polysilicon, and doping concentration is 5 × 1019cm-3。
After the first doped region 101, the second doped region 102, third doped region 103, the 4th doped region 104 are formed, light wave
Lead device as shown in fig. 9f.
In one embodiment of the invention, the preparation method of the fiber waveguide device can also include:
Step S85: the top covering for covering the grating 4, first flat part 11, second flat part 12 is formed
53。
Fiber waveguide device shown in map interlinking 9F forms fiber waveguide device as shown in fig. 9g after step S84, S85.
Wherein, top covering 5 can by silica, silicon nitride etc. relative to ridge wave refractive index it is low material preparation and
At.
Further, after step S85, the preparation method of the fiber waveguide device can also include:
Step S86: opening up the first via hole 51 and the second via hole 52 on the top covering 5, and first via hole 51 is used for
The exposure third doped region 103, second via hole 52 is for exposing the 4th doped region 104.Also referring to Fig. 9 H
Step S87: conductive layer 10 is formed back to the side of the substrate in the top covering 5, the conductive layer 10 passes through
First via hole 51 is electrically connected the third doped region 103 and is electrically connected the 4th doping by second via hole 52
Area 104.Also referring to Fig. 9 I.
Step S88: patterning the conductive layer 10, forms spaced first electrode 6 and second electrode 7；Described
One electrode 6 is electrically connected the third doped region 103, and the second electrode 7 is electrically connected the 4th doped region 104.Please join together
Read Fig. 9 J.
It should be understood that in the present invention, the patterning refers to patterning processes, it may include photoetching process, or, including light
Carving technology and etch step, while can also include other techniques for being used to form predetermined pattern such as printing, ink-jet；Photoetching work
Skill refers to the work that figure is formed using photoresist, mask plate, exposure machine etc. including the technical process such as film forming, exposure, development,
Skill.Can according to the present invention formed in the corresponding patterning processes of structure choice.
Etch step or etching technics include dry etching and wet etching etc., and the embodiment of the present invention is according to the material of material layer
Matter selects etching technics used in the prior art, and the present invention is not repeating.
In the embodiment of the present invention, by providing a substrate 8；The surface layer of substrate 8 is semiconductor layer；Patterned semiconductor layer,
To be formed along first direction arrangement the first flat part, the second flat part and be set between the first flat part and the second flat part
And the raised line being connect with the first flat part and the second flat part, wherein raised line is higher than the first flat part and in a second direction
Two flat parts；Second direction is perpendicular to first direction；In turn, in the side shape of the first flat part and adjacent first flat part of raised line
At the first doped region 101 with P-type conductivity, being formed in the side of the second flat part and adjacent second flat part of raised line has
Second doped region 102 of N-type conductivity, the first doped region 101 and the second doped region 102 abut to form PN junction；Raised line back to
The side of substrate 8 forms grating 4；And/or adjacent raised line forms grating 4 on the first flat part and/or the second flat part.This
Inventive embodiments on ridge waveguide by forming grating 4, so that 4 guide properties of grating are presented in ridge waveguide, it is right by grating 4
Slow light effect caused by light carrier improves modulation efficiency.
Moreover, be accurately realization grating 4 to the slow light effect of specific wavelength light carrier, the needs pair when preparing grating 4
4 period of grating, duty ratio, height etc. are designed.In the preparation process angle of grating 4, formed above raised line grating 4
Technique realizes that the position than raised line adjacent on the first flat part and/or the second flat part is easier to realize, can preferably control
The structure of grating 4 processed.
In the embodiment of the present invention counter structure, material, movement and all devices or step and function element etc.
Same form (if present) is intended to include any structure, the material that the element being distinctly claimed in conjunction with other is used to execute the function
Material or movement.Description of the invention for embodiment and the purpose of description are presented, but be not intended to exhaustion or will be by
Invention is limited in disclosed form.Without departing from the scope and spirit of the invention, a variety of modification and variation for
It is obvious for those of ordinary skill in the art.Embodiment described in the present invention can preferably disclose this hair
Bright principle and practical application, and those of ordinary skill in the art is made to can be appreciated that the present invention.
The steps in the embodiment of the present invention can be sequentially adjusted, merged and deleted according to actual needs.
Module in the device of that embodiment of the invention can be combined, divided and deleted according to actual needs.
The above, the above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although referring to before
Stating embodiment, invention is explained in detail, those skilled in the art should understand that: it still can be to preceding
Technical solution documented by each embodiment is stated to modify or equivalent replacement of some of the technical features；And these
It modifies or replaces, the range for technical solution of various embodiments of the present invention that it does not separate the essence of the corresponding technical solution.
Claims (23)
1. a kind of fiber waveguide device, which is characterized in that the fiber waveguide device includes: substrate, is set in turn on the substrate
Ridge waveguide and grating, wherein
The ridge waveguide includes the first flat part arranged in the first direction, the second flat part, and is set to described first
The raised line being connect between flat part and second flat part and with first flat part and second flat part；It is described convex
Item is higher than first flat part and second flat part in a second direction；The second direction is perpendicular to the first party
To；
The ridge waveguide includes: across the raised line and first flat part and with the first doped region of P-type conductivity；With
And across the raised line and second flat part and with the second doped region of N-type conductivity；First doped region with it is described
The PN junction that second doped region abuts to form；
The grating is set to the raised line back to the side of the substrate.
2. fiber waveguide device as described in claim 1, which is characterized in that the grating includes along third direction periodic intervals
The grating minor structure of setting；The third direction is respectively perpendicular to the first direction, the second direction.
3. the fiber waveguide device as described in claims 1 or 2 any one claim, which is characterized in that the folding of the grating
Penetrate the refractive index that rate is not more than the raised line.
4. the fiber waveguide device as described in claim 1-3 any one claim, which is characterized in that the grating is described in
The width of first direction is with the raised line along the of same size of the first direction.
5. the fiber waveguide device as described in claim 1-4 any one claim, which is characterized in that the material of the grating
For insulating materials.
6. the fiber waveguide device as described in claim 1-5 any one claim, which is characterized in that the grating along institute
The height for stating second direction is 50nm-500nm.
7. the fiber waveguide device as described in claim 1-6 any one claim, which is characterized in that the interface of the PN junction
Perpendicular to the first direction；First doped region described in the raised line is equal in the raised line along the width of the first direction
The width along the first direction of second doped region.
8. the fiber waveguide device as described in claim 1-7 any one claim, which is characterized in that first flat part
It further include adjacent first doped region and the third doped region with P-type conductivity；Second flat part further includes adjoining
Second doped region and the 4th doped region with N-type conductivity；The conductivity of the third doped region is greater than described first
The conductivity of doped region, the conductivity of the 4th doped region are greater than the conductivity of second doped region.
9. fiber waveguide device as claimed in claim 8, which is characterized in that the fiber waveguide device further include:
Cover the top covering of the ridge waveguide and the grating；
The first electrode being electrically connected by the first via hole being set on the top covering with the third doped region；And
The second electrode being electrically connected by the second via hole being set on the top covering with the 4th doped region.
10. a kind of fiber waveguide device, which is characterized in that the fiber waveguide device includes: substrate, is set in turn on the substrate
Ridge waveguide and grating, wherein
The ridge waveguide includes the first flat part arranged in the first direction, the second flat part, and is set to described first
The raised line being connect between flat part and second flat part and with first flat part and second flat part；It is described convex
Item is higher than first flat part and second flat part in a second direction；The second direction is perpendicular to the first party
To；
The ridge waveguide includes: across the raised line and first flat part and with the first doped region of P-type conductivity；With
And across the raised line and second flat part and with the second doped region of N-type conductivity；First doped region with it is described
The PN junction that second doped region abuts to form；
The grating is set at least one flat part in first flat part and the second flat part the adjacent raised line.
11. fiber waveguide device as claimed in claim 10, which is characterized in that the grating includes between third direction periodicity
Every the grating minor structure of setting；The third direction is respectively perpendicular to the first direction, the second direction.
12. the fiber waveguide device as described in claim 10 or 11 any one claims, which is characterized in that the grating
Refractive index is not more than the refractive index of the raised line.
13. the fiber waveguide device as described in claim 10-12 any one claim, which is characterized in that the grating
Material is insulating materials.
14. a kind of fiber waveguide device preparation method, which is characterized in that the described method includes:
One substrate is provided；The surface layer of the substrate is semiconductor layer；
The semiconductor layer is patterned, to be formed along first direction arrangement the first flat part, the second flat part and be set to institute
The raised line stated between the first flat part and second flat part and connect with first flat part and second flat part；
The raised line is higher than first flat part and second flat part in a second direction；The second direction is perpendicular to described
First direction；
Being formed in the side of first flat part and adjacent first flat part of the raised line has the first of P-type conductivity
Doped region, being formed in the side of second flat part and adjacent second flat part of the raised line has N-type conductivity
Second doped region, first doped region and second doped region abut to form PN junction；
Grating is formed back to the side of the substrate in the raised line；Or, in first flat part and the second flat part
The adjacent raised line forms grating at least one flat part.
15. fiber waveguide device preparation method as claimed in claim 14, which is characterized in that it is described in the raised line back to described
The side of substrate forms grating
Insulating layer is formed back to the side of the substrate in the raised line；
It patterns the insulating layer and forms the grating minor structure being arranged along third direction periodic intervals；The third direction difference
Perpendicular to the first direction, the second direction.
16. fiber waveguide device preparation method as claimed in claim 14, which is characterized in that it is described in first flat part and
The adjacent raised line formation grating includes: at least one flat part in second flat part
The adjacent raised line forms insulating layer on first flat part and/or the second flat part；
It patterns the insulating layer and forms the grating minor structure being arranged along third direction periodic intervals；The third direction difference
Perpendicular to the first direction, the second direction.
17. the fiber waveguide device preparation method as described in claim 14-16 any one claim, which is characterized in that institute
The refractive index for stating grating is not more than the refractive index of the raised line.
18. the fiber waveguide device preparation method as described in claims 14 or 15, which is characterized in that in the raised line back to described
The grating that the side of substrate is formed along the first direction width with the raised line along the of same size of the first direction.
19. the fiber waveguide device preparation method as described in claim 14-18 any one claim, which is characterized in that institute
The material for stating grating is insulating materials.
20. the fiber waveguide device preparation method as described in claim 14-19 any one claim, which is characterized in that institute
The height along the second direction for stating grating is 50nm-500nm.
21. the fiber waveguide device preparation method as described in claim 13-20 any one claim, which is characterized in that institute
The interface of PN junction is stated perpendicular to the first direction；Width etc. of first doped region described in the raised line along the first direction
The width along the first direction of the second doped region described in the raised line.
22. the fiber waveguide device preparation method as described in claim 14-21 any one claim, which is characterized in that institute
State preparation method further include:
Adjacent first doped region and the third doped region with P-type conductivity are formed on first flat part；Institute
It states and forms adjacent second doped region and the 4th doped region with N-type conductivity on the second flat part；
Wherein, the conductivity of the third doped region is greater than the conductivity of first doped region, and the 4th doped region is led
Electric rate is greater than the conductivity of second doped region.
23. fiber waveguide device preparation method as claimed in claim 22, which is characterized in that the method also includes:
The top covering of semiconductor layer and the grating after forming covering doping；
The first via hole and the second via hole are opened up on the top covering, first via hole is used to expose the third doped region,
Second via hole is for exposing the 4th doped region；
Conductive layer is formed back to the side of the substrate in the top covering, the conductive layer is electrically connected by first via hole
The third doped region and the 4th doped region is electrically connected by second via hole；
The conductive layer is patterned, spaced first electrode and second electrode are formed；Described in the first electrode electrical connection
Third doped region, the second electrode are electrically connected the 4th doped region.
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| WO2024007798A1 (en) * | 2022-07-07 | 2024-01-11 | 苏州湃矽科技有限公司 | Silicon optical modulator |
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