CN110317048A - A kind of microwave device absorbing material and preparation method thereof - Google Patents
A kind of microwave device absorbing material and preparation method thereof Download PDFInfo
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- CN110317048A CN110317048A CN201910764573.4A CN201910764573A CN110317048A CN 110317048 A CN110317048 A CN 110317048A CN 201910764573 A CN201910764573 A CN 201910764573A CN 110317048 A CN110317048 A CN 110317048A
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Abstract
The invention belongs to microwave material technical fields, and in particular to a kind of microwave device absorbing material and preparation method thereof.The microwave absorbing material is prepared by the raw material of following weight proportion: industrial silicon 35~45%, aluminium oxide ceramics powder 35~45%, moulding agent 1~5%, adhesive 10~20%.The present invention also provides the preparation methods of above-mentioned microwave device absorbing material.For the present invention by selecting suitable auxiliary material and auxiliary material so that absorbing material Production Time of the invention is short, and to can be applied to 1.13~18GHz of operating frequency range with the proportion of industrial silicon, aluminium oxide ceramics powder, corresponding waveguide bore is BJ14 to BJ140.
Description
Technical field
The invention belongs to microwave material technical fields, and in particular to a kind of microwave device absorbing material and its preparation side
Method.
Background technique
Microwave absorbing material, also referred to as microwave-absorbing body, be it is a kind of can absorb microwave, electromagnetic energy, and reflect smaller with scattering
Device, absorb microwave basic principle be by certain physical action mechanism by microwave energy be other forms movement energy
Amount, and thermal energy is converted by the dissipation effect of the movement, it is distributed by different radiating modes.
It is absorbent that ferrite, which is widely used, in microwave current absorber, and different auxiliary materials is added to be made through overbaking.Though
Cobalt ferrite absorber occupies certain advantage on bandwidth of operation and voltage standing wave ratio, but with radar complete machine or system pair
The requirement of power capacity is higher and higher, and ferrite absorbent body has the following problems: 1, using using ferrite as main absorber
Absorber, predominant amount are the metals such as iron, and absorber in the natural environment, is easy corrosion.2, it uses based on ferrite
Want the absorber of absorbent, low-temperature lacquer as adhesive.The bonding strength of its product is poor, and especially the splitter position of absorber holds
Phenomena such as easily causing absorber rupture, defect in turn results in the problems such as machining difficulty increases.
CN109896845A discloses a kind of microwave high power material and its preparation process, is prepared by following preparation processes
Microwave high power material: aluminium oxide ceramics powder, industrial silicon, water and dextrin are prepared according to the ratio, above-mentioned raw materials are ground, is aging,
Compacting, sintering, post-processing.For above-mentioned material using water and dextrin as auxiliary material, taking time after stock aging meets the equal of material
Even property；Material is applied to 50~70GHz of working frequency.
Summary of the invention
The purpose of the present invention is to provide a kind of microwave device absorbing material for meeting 1.13~18GHz of working frequency and
Preparation method.
Present invention firstly provides a kind of microwave device absorbing materials, are prepared by the raw material of following weight proportion:
Industrial silicon 35~45%, aluminium oxide ceramics powder 35~45%, moulding agent 1~5%, adhesive 10~20%.
Wherein, above-mentioned microwave device absorbing material, is prepared by the raw material of following weight proportion:
Industrial silicon 39%, aluminium oxide ceramics powder 42%, moulding agent 3%, adhesive 16%.
Wherein, above-mentioned microwave device absorbing material, partial size≤180 μm of the industrial silicon.
Wherein, above-mentioned microwave device absorbing material, content >=75wt% of Al2O3 in the aluminium oxide ceramics powder.
Wherein, above-mentioned microwave device absorbing material, partial size≤38 μm of the aluminium oxide ceramics powder.
Wherein, above-mentioned microwave device absorbing material, the moulding agent are oleic acid.
Wherein, above-mentioned microwave device absorbing material, described adhesive are paraffin.
The present invention also provides the preparation methods of above-mentioned microwave device absorbing material, comprising the following steps: presses raw material
After weight proportion mixing, formed through molding, sintering and mill processing and fabricating.
Compared with prior art, the invention has the following beneficial effects:
The present invention is by screening auxiliary material and adjusting the proportion of raw material, so that absorbing material Production Time of the invention is short,
And it can be applied to 1.13~18GHz of operating frequency range, corresponding waveguide bore is BJ14 to BJ140.
Specific embodiment
Specifically, a kind of microwave device absorbing material, is prepared by the raw material of following weight proportion:
Industrial silicon 35~45%, aluminium oxide ceramics powder 40~50%, moulding agent 3~8%, adhesive 10~15%.
Preferably, above-mentioned microwave device absorbing material, is prepared by the raw material of following weight proportion:
Industrial silicon 39%, aluminium oxide ceramics powder 42%, moulding agent 3%, adhesive 16%.
The present invention passes through the proportion for selecting suitable auxiliary material and auxiliary material and industrial silicon, aluminium oxide ceramics powder, so that this hair
Bright absorbing material Production Time is short.
In the raw material of microwave device absorbing material of the present invention, partial size≤180 μm of industrial silicon；Aluminium oxide ceramics powder
Middle Al2O3Content >=75wt%；Partial size≤38 μm of aluminium oxide ceramics powder.
The present invention passes through the partial size of control raw material, so that frequency of the absorbing material prepared by the present invention in 1.13~18GHz
Absorbent properties in range are best.
The present invention has the advantage that compared with CN109896845A
1, CN109896845A needs aging 72 hours left sides as auxiliary material using water and dextrin for the uniformity for meeting material
The right side, then carry out the molding procedure of product.The present invention is using oleic acid and paraffin as auxiliary material, it is only necessary to toast at a temperature of 100 DEG C
24 hours, then the molding procedure of product can be carried out, cancel aging process, shorten the process time.
It 2, is 50~70GHz by the applicable working frequency of the material of the raw material of CN109896845A and proportion production；By this
The microwave-absorbing body that invention raw material and proportion are made；Or absorber is put into the heat-dissipating casings such as aluminium, copper, it is fabricated to microwave
Device-microwave pad, is applied to 1.13~18GHz of operating frequency range, and corresponding waveguide bore is BJ14 to BJ140.
The solution of the present invention is explained below in conjunction with embodiment.It will be understood to those of skill in the art that following
Embodiment is merely to illustrate the present invention, and should not be taken as limiting the scope of the invention.Particular technique or item are not specified in embodiment
Part, it described technology or conditions or is carried out according to the literature in the art according to product description.Agents useful for same or instrument
Production firm person is not specified in device, and being can be with conventional products that are commercially available.
Embodiment 1
Formula: industrial silicon 39%, aluminium oxide magnetic powder 42%, oleic acid 3%, paraffin 16%.
Weighing: industrial silicon 390g, aluminium oxide magnetic powder 420g, oleic acid 30g, paraffin 160g.
Stock: respective material is weighed by formula, is stocked up.
Molding: material toasts 24 hours at 100 DEG C, is put into corresponding mold, takes out absorber after standing about 1 minute
?.
Sintering:
0~200 DEG C of set temperature, allow the temperature difference ± 20 DEG C, is burnt into 2 hours.
When temperature reaches 200 DEG C, 1 hour is kept the temperature.
200~500 DEG C of set temperature, allow the temperature difference ± 20 DEG C, is burnt into 2 hours.
When temperature reaches 500 DEG C, 2 hours are kept the temperature.
500~800 DEG C of set temperature, allow the temperature difference ± 20 DEG C, is burnt into 4 hours.
When temperature reaches 800 DEG C, 2 hours are kept the temperature.
800~1100 DEG C of set temperature, allow the temperature difference ± 20 DEG C, is burnt into 4 hours.
When temperature reaches 1100 DEG C, 2 hours are kept the temperature.
1100~1380 DEG C of set temperature, allow the temperature difference ± 20 DEG C, is burnt into 4 hours.
When temperature reaches 1380 DEG C, 2 hours are kept the temperature.
After soaking time reaches, power supply or duration and degree of heating are closed.When kiln temperature is lower than 50 DEG C, absorber is taken out.
Mill processing: product is processed using flat stone mill or tool grinder, meets design size.After processing is completed, it is put into
Baking oven, set temperature keep the temperature 20 minutes, are cooled to room temperature after taking-up to 150 DEG C.
Test: by the absorber completed the process or the microwave pad being made by absorber, (microwave pad refers to directly
Connect and absorber be fitted into the heat-dissipating casing of flange plate), it is tested using Network Analyzer.Corresponding working frequency and electricity
Press standing-wave ratio are as follows:
The BJ140 of standard gauge BJ14,18,22,26-, respective frequencies are 1.13~18GHz.Product is complete corresponding bore
It is tested under frequency, voltage standing wave ratio is≤1.25.Such as BJ32 bore, when bandwidth of operation is 2.6~3.95GHz of full rate, electricity
Press standing-wave ratio≤1.25；When bandwidth of operation is 2.7~3.1GHz, voltage standing wave ratio≤1.15.
Comparative example 1
Formula: industrial silicon 52%, aluminium oxide magnetic powder 30%, oleic acid 8%, paraffin 10%.
Weighing: industrial silicon 520g, aluminium oxide magnetic powder 300g, oleic acid 80g, paraffin 100g.
The preparation method is the same as that of Example 1.
Test: test equipment and method are with embodiment 1, when working frequency is 2.7~3.1GHz, voltage standing wave ratio≤
1.5。
Comparative example 2
Formula: industrial silicon 47%, aluminium oxide magnetic powder 38%, oleic acid 5%, paraffin 10%.
Weighing: industrial silicon 470g, aluminium oxide magnetic powder 380g, oleic acid 50g, paraffin 100g.
The preparation method is the same as that of Example 1.
Test: test equipment and method are with embodiment 1, when working frequency is 2.7~3.1GHz, voltage standing wave ratio≤
1.31。
Comparative example 3
Formula: industrial silicon 32%, aluminium oxide magnetic powder 53%, oleic acid 3%, paraffin 12%.
Weighing: industrial silicon 320g, aluminium oxide magnetic powder 530g, oleic acid 30g, paraffin 120g.
The preparation method is the same as that of Example 1.
Test: test equipment and method are with embodiment 1, when working frequency is 2.7~3.1GHz, voltage standing wave ratio≤
1.32。
Claims (8)
1. microwave device absorbing material, which is characterized in that be prepared by the raw material of following weight proportion:
Industrial silicon 35~45%, aluminium oxide ceramics powder 35~45%, moulding agent 1~5%, adhesive 10~20%.
2. according to microwave device absorbing material described in right 1, which is characterized in that by the raw material preparation of following weight proportion
At:
Industrial silicon 39%, aluminium oxide ceramics powder 42%, moulding agent 3%, adhesive 16%.
3. microwave device absorbing material according to claim 1 or claim 2, it is characterised in that: partial size≤180 of the industrial silicon
μm。
4. microwave device absorbing material according to claim 1 or claim 2, it is characterised in that: in the aluminium oxide ceramics powder
Al2O3Content >=75wt%.
5. microwave device absorbing material according to claim 4, it is characterised in that: the partial size of the aluminium oxide ceramics powder≤
38μm。
6. microwave device absorbing material according to claim 1 or claim 2, it is characterised in that: the moulding agent is oleic acid.
7. microwave device absorbing material according to claim 1 or claim 2, it is characterised in that: described adhesive is paraffin.
8. the preparation method of any one of the claim 1~7 microwave device absorbing material, which is characterized in that including following
Step: it after raw material is mixed according to the weight ratio, is formed through molding, sintering and mill processing and fabricating.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101665350A (en) * | 2009-09-08 | 2010-03-10 | 美的集团有限公司 | Ceramic microwave absorbing material and preparation method and application thereof |
| CN102173727A (en) * | 2010-12-15 | 2011-09-07 | 电子科技大学 | Composite high-temperature-resistant wave-absorbing coating material and preparation method of wave-absorbing coating |
| CN102874810A (en) * | 2012-10-26 | 2013-01-16 | 浙江理工大学 | Preparation method of beta-SiC nano powder |
| CN103601477A (en) * | 2013-11-19 | 2014-02-26 | 宜宾红星电子有限公司 | Preparation process of absorber with low voltage standing-wave ratio |
| CN109534772A (en) * | 2019-01-16 | 2019-03-29 | 山东国帅节能环保科技有限公司 | A kind of heat superconducting porcelain film composite material and preparation method thereof |
| CN109896845A (en) * | 2019-04-17 | 2019-06-18 | 成都图兰达科技有限公司 | A kind of microwave high power material and its preparation process |
-
2019
- 2019-08-19 CN CN201910764573.4A patent/CN110317048A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101665350A (en) * | 2009-09-08 | 2010-03-10 | 美的集团有限公司 | Ceramic microwave absorbing material and preparation method and application thereof |
| CN102173727A (en) * | 2010-12-15 | 2011-09-07 | 电子科技大学 | Composite high-temperature-resistant wave-absorbing coating material and preparation method of wave-absorbing coating |
| CN102874810A (en) * | 2012-10-26 | 2013-01-16 | 浙江理工大学 | Preparation method of beta-SiC nano powder |
| CN103601477A (en) * | 2013-11-19 | 2014-02-26 | 宜宾红星电子有限公司 | Preparation process of absorber with low voltage standing-wave ratio |
| CN109534772A (en) * | 2019-01-16 | 2019-03-29 | 山东国帅节能环保科技有限公司 | A kind of heat superconducting porcelain film composite material and preparation method thereof |
| CN109896845A (en) * | 2019-04-17 | 2019-06-18 | 成都图兰达科技有限公司 | A kind of microwave high power material and its preparation process |
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Application publication date: 20191011 |