CN110316752A - A kind of ytterbium oxychloride nanometer sheet and its preparation method and application - Google Patents
A kind of ytterbium oxychloride nanometer sheet and its preparation method and application Download PDFInfo
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- CN110316752A CN110316752A CN201910453116.3A CN201910453116A CN110316752A CN 110316752 A CN110316752 A CN 110316752A CN 201910453116 A CN201910453116 A CN 201910453116A CN 110316752 A CN110316752 A CN 110316752A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F17/00—Compounds of rare earth metals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/48—Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/58—Selection of substances as active materials, active masses, active liquids of inorganic compounds other than oxides or hydroxides, e.g. sulfides, selenides, tellurides, halogenides or LiCoFy; of polyanionic structures, e.g. phosphates, silicates or borates
- H01M4/582—Halogenides
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/20—Particle morphology extending in two dimensions, e.g. plate-like
- C01P2004/24—Nanoplates, i.e. plate-like particles with a thickness from 1-100 nanometer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
Abstract
The present invention provides a kind of ytterbium oxychloride nanometer sheet and its preparation method and application, and the preparation method includes: that sodium chloride is added using ytterbium oxide and six hydrous ytterbium chlorides as raw material, carries out chemical vapour deposition reaction and the ytterbium oxychloride nanometer sheet is made.Preparation method simple process of the invention, reaction speed are fast and at low cost, and ytterbium oxychloride (YbOCl) the nanometer sheet area being prepared is big, purity is high, good crystallinity, and chemical property is stablized.Ytterbium oxychloride (YbOCl) nanometer sheet that the present invention is prepared can apply battery electrode material or in terms of.
Description
Technical field
The present invention relates to inorganic semiconductor material technical field more particularly to a kind of ytterbium oxychloride nanometer sheet and its preparation sides
Method and application.
Background technique
In recent years, two-dimensional layer material is due to the next-generation electricity such as its scene effect transistor, memory and photodetector
The huge applications prospect showed in son, opto-electronic device, has attracted the concern of whole world researcher.Although having more than 5600
Kind material is defined as stratified material, but the research of two-dimensional layer material is concentrated mainly on graphene, Transition Metal Sulfur at present
Other " star " materials such as compound, black phosphorus and boron nitride.But these " star " materials are still faced with uncontrollable standby, shakiness
The problems such as qualitative and electric property is poor, the application which has limited them in real life.
The oxygen-containing material of two dimension is attract attention because of its excellent performance in the recent period.For example, Bi2O2Se has high
Carrier mobility, good stability and high flexibility, it is shown that its huge applications in high speed, flexible electronic device
Potentiality.It theoretically predicts, MOX (M=iron, cobalt, manganese, chromium, group of the lanthanides and actinide metals；O=oxygen；X=fluorine, chlorine, bromine, iodine) have solely
Special physics and magnetic behavior has application prospect.It is only a small amount of about chlorine oxygen in the prior art but for MOX material
Change the report of iron Preparation Method, specially in the case where argon gas is as protective gas, by Fe2O3With anhydrous FeCl3Powder is to rub
You are sufficiently mixed the ratio than 4:3, and then vacuumizing is sealed in it in quartz ampoule, roasts one week at 380 DEG C.This method
Reaction time is too long, and needs to carry out under vacuum conditions, the high requirements on the equipment, increases cost, and the product also obtained is three
Structure is tieed up, is not two-dimensional layered structure, being applied to range has certain influence.
Therefore, the present invention is intended to provide a kind of prepare simple MOX material.
Summary of the invention
In view of the problems of the existing technology, the present invention provides a kind of ytterbium oxychloride nanometer sheet and preparation method thereof and answers
With.
An object of the present disclosure is to provide a kind of preparation method of ytterbium oxychloride nanometer sheet, comprising: with ytterbium oxide and six water
Conjunction ytterbium chloride is raw material, and sodium chloride is added, and carries out chemical vapour deposition reaction and the ytterbium oxychloride nanometer sheet is made.
In above-mentioned technical proposal, the effect of the sodium chloride is that the fusing point of ytterbium oxide is higher, is 2346 DEG C, so that oxidation
Ytterbium cannot be evaporated effectively in aumospheric pressure cvd system.And the fusing point of sodium chloride is lower, at a lower temperature
Molten condition can be reached, to reduce the energy barrier of ytterbium oxide, evaporation rate is improved, so that it is in atmospheric chemical vapor
It can also effectively volatilize in deposition.
Preparation method simple process of the invention, reaction speed are fast and at low cost, the ytterbium oxychloride (YbOCl) being prepared
Nanometer sheet area is big, with high purity, good crystallinity, and chemical property is stablized.
Preferably, the chemical vapour deposition reaction carries out in single temperature zone tube furnace, and furnace temperature is 730~800 DEG C, reaction
Time is 20~60min.
It is further preferred that the furnace temperature is 750-760 DEG C, the reaction time is 30~40min.
Within the above range by Control for Kiln Temperature, ytterbium oxide and six hydrous ytterbium chlorides can be made to form volatile materials, and
Obtained ytterbium oxychloride (YbOCl) nanometer sheet number of plies is less, and thickness is thin.And continuing growing with temperature, ytterbium oxide and six water
The volatile materials amount for closing ytterbium chloride formation is very big, and obtained ytterbium oxychloride (YbOCl) nanometer sheet is thicker.
Preferably, the mass ratio of the ytterbium oxide, six hydrous ytterbium chlorides and sodium chloride is 9~11:9~11:0.1~2, into
One step is preferably 10:10:1.
Preferably, argon gas is connected in the single temperature zone tube furnace, the flow of the argon gas is 80~150sccm, further
Preferably 120sccm.
Preferably, the intraductal pressure of the single temperature zone tube furnace is atmospheric pressure.Vacuum C VD item is compared using atmospheric pressure cvd
Part requires lower, reduction cost, and the reaction time of atmospheric pressure cvd is shorter, and obtained product quality is also preferable.
Preferably, the ytterbium oxychloride nanometer sheet is grown in the sapphire substrates of two-sided polishing.The two-sided polishing
Sapphire matches since it belongs to hexagonal crystal system with ytterbium oxychloride nanometer sheet lattice, so in the process for sapphire-based of two-sided polishing
The consistent ytterbium oxychloride nanometer sheet of orientation is easy to get on bottom.
Preferably, the preparation method specifically includes: the ytterbium oxide, six hydrous ytterbium chlorides and sodium chloride being mixed equal
It is even, be placed in quartz boat, then by the sapphire substrates left-hand thread of the two-sided polishing equipped with ytterbium oxide, six hydrous ytterbium chlorides with
And on the quartz boat of sodium chloride, then the quartz boat is placed in the middle part of single temperature zone tube furnace, heating carries out chemical vapor deposition
It reacts, after reaction cooled to room temperature.
In a preferred embodiment of the invention, the preparation method of ytterbium oxychloride nanometer sheet is specifically included:
Ytterbium oxide, six hydrous ytterbium chlorides and sodium chloride 9~11:9 in mass ratio~11:0.1~2 are uniformly mixed, are placed in
In quartz boat, then by the sapphire substrates left-hand thread of two-sided polishing on the quartz boat equipped with mixed material, then by the quartz
Boat is placed in the middle part of single temperature zone tube furnace, and heating makes furnace temperature reach 730~800 DEG C, reacts 20~60min at this temperature, instead
The argon gas that flow is 80~150sccm is connected with during answering in single temperature zone tube furnace, after reaction cooled to room temperature, i.e.,
?.
Preferably, the preparation method further include: before heating, using argon gas to the quartz of the single temperature zone tube furnace
Pipe is cleaned.Cleaning is to reduce impurity, and the product purity made is higher.
Second purpose of the invention is to provide a kind of ytterbium oxychloride nanometer sheet prepared by the preparation method.The chlorine
The chemical composition of ytterbium oxide nanometer sheet be YbOCl, the ytterbium, oxygen, chlorine element atomic ratio be 1:1:1.
The purpose of third of the present invention is to provide the application of above-mentioned ytterbium oxychloride nanometer sheet, including its battery electrode material with
And the application of intercalation material etc..
The invention has the following advantages:
(1) present invention prepares ytterbium oxychloride by chemical vapour deposition technique using ytterbium oxide and six hydrous ytterbium chlorides as raw material
Nanometer sheet, the method have the advantages that preparation process is simple and convenient to operate, reaction speed is fast and at low cost.
(2) good crystallinity of ytterbium oxychloride nanometer sheet of the invention, chemical property are stablized, and size is big, can from low temperature Raman
To find out two Raman modes EgAnd A1gPeak position vary with temperature very little, stratiform YbOCl nanometer sheet chemical property is stablized, lattice
Volume does not vary with temperature substantially, it is possible to which the electrode material as battery material uses.Alternating temperature Raman and Varying-thickness Raman
Show that the model ylid bloom action power of ytterbium oxychloride interlayer is very weak, then the lesser ion of some radiuses such as lithium ion, sodium ion can be with
The interlayer for freely easily entering YbOCl crystal, the structure without destroying stratiform YbOCl crystal, so two-dimensional layer YbOCl
Crystal can be used as intercalation material.
Detailed description of the invention
Fig. 1 is the crystal structure schematic diagram of YbOCl nanometer sheet；
Fig. 2 is double optical microscopes for cuing open YbOCl nanometer sheet in sapphire substrates；
Fig. 3 is the atomic force microscopy diagram (AFM) of YbOCl nanometer sheet；
Fig. 4 is the high-resolution-ration transmission electric-lens figure (HRTEM) of YbOCl nanometer sheet, and wherein illustration is the constituency of YbOCl nanometer sheet
Electron diffraction diagram；
Fig. 5 is the transmission electron microscope distribution diagram of element (TEM-EDX elemental mapping) of YbOCl nanometer sheet, from a left side
To the distribution map of right respectively Yb, O and Cl element；
Fig. 6 is the X-ray diffractogram (XRD) of YbOCl nanometer sheet；
Fig. 7 is the Raman analysis figure (Raman) of YbOCl nanometer sheet；
Fig. 8 is EgAnd A1gThe Raman profile of Raman Vibration Mode；
Fig. 9 is the alternating temperature Raman analysis figure of YbOCl nanometer sheet；
Figure 10 is EgAnd A1gThe Raman shift figure that mode varies with temperature respectively；
Figure 11 is the Varying-thickness Raman analysis figure of YbOCl nanometer sheet；
Figure 12 is EgAnd A1gMode is respectively with the Raman shift of thickness change and raman scattering intensity figure.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, with reference to the accompanying drawing to of the invention real
The technical solution applied in example is clearly and completely described, it is clear that and described embodiments are some of the embodiments of the present invention,
Instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art are not making creative labor
Every other embodiment obtained under the premise of dynamic, shall fall within the protection scope of the present invention.
Embodiment 1
The present embodiment provides a kind of YbOCl nanometer sheet, preparation method specifically includes the following steps:
(1) by 0.5g Yb2O3、0.5gYbCl3·6H2O and 0.05g NaCl is uniformly mixed, and is placed in quartz boat, will
The sapphire substrates left-hand thread of clean two-sided polishing is on the quartz boat for being loaded with uniformly mixed powder；
(2) quartz boat for being loaded with two-sided polishing sapphire substrates is put in the intermediate position of single temperature zone tube furnace quartz ampoule,
Then after cleaning quartz ampoule repeatedly with argon gas, furnace temperature is increased to 760 DEG C in 30 minutes, holding carrier gas Ar flow is
120sccm, the YbOCl nanometer sheet that cooled to room temperature is grown in sapphire substrates after growth 30 minutes to get tiling.
Embodiment 2
The present embodiment provides a kind of YbOCl nanometer sheet, preparation method specifically includes the following steps:
(1) by 0.5g Yb2O3、0.5gYbCl3·6H2O and 0.1g NaCl is uniformly mixed, and is placed in quartz boat, will be done
The sapphire substrates left-hand thread of net two-sided polishing is on the quartz boat for being loaded with uniformly mixed powder；
(2) quartz boat for being loaded with two-sided polishing sapphire substrates is put in the intermediate position of single temperature zone tube furnace quartz ampoule,
Then after cleaning the quartz ampoule of single temperature zone tube furnace repeatedly with argon gas, furnace temperature is increased to 780 DEG C in 30 minutes, keeps carrier gas
(argon gas) flow is 150sccm, and cooled to room temperature is grown in sapphire substrates after growth 30 minutes to get tiling
YbOCl nanometer sheet.
Embodiment 3
The present embodiment provides a kind of YbOCl nanometer sheet, preparation method specifically includes the following steps:
(1) by 0.45g Yb2O3、0.5gYbCl3·6H2O and 0.1g NaCl is uniformly mixed, and is placed in quartz boat, will
The sapphire substrates left-hand thread of clean two-sided polishing is on the quartz boat for being loaded with uniformly mixed powder；
(2) quartz boat for being loaded with two-sided polishing sapphire substrates is put in the intermediate position of single temperature zone tube furnace quartz ampoule,
Then after cleaning the quartz ampoule of single temperature zone tube furnace repeatedly with argon gas, furnace temperature is increased to 750 DEG C in 30 minutes, keeps carrier gas
(argon gas) flow is 120sccm, and cooled to room temperature is grown in sapphire substrates after forty minutes to get tiling for growth
YbOCl nanometer sheet.
1 gained YbOCl nanometer sheet of embodiment is tested for the property, as a result as follows:
Fig. 1 is the crystal structure schematic diagram of YbOCl nanometer sheet, it is known that the Atomic Arrangement of YbOCl crystal from figure.
Fig. 2 is double optical microscopes for cuing open YbOCl nanometer sheet in sapphire substrates, it can be seen from the figure that YbOCl receives
Rice piece is tiling growth in sapphire substrates, and triangle edges circle length is about 25 microns.
Fig. 3 be YbOCl nanometer sheet atomic force microscopy diagram, it can be seen from the figure that YbOCl nanometer sheet with a thickness of
6.6 nanometers, thickness is less than 10 nanometers.
Fig. 4 is the high-resolution-ration transmission electric-lens figure of YbOCl nanometer sheet, and illustration is the selective electron diffraction figure of YbOCl nanometer sheet.
It can be seen from the figure that YbOCl nanometer sheet has good crystallinity, lattice fringe is mutually very obvious clear.Selected area electron
There was only one group of spot and clear spot in diffraction pattern, the YbOCl nanometer sheet for showing growth is monocrystalline and crystallinity is good.
Fig. 5 is the transmission electron microscope EDX distribution diagram of element of YbOCl nanometer sheet, from left to right respectively Yb, O and Cl element
Distribution map, it can be seen from the figure that Yb, O and Cl element are uniformly distributed in nanometer sheet.
Fig. 6 is the X-ray diffractogram of YbOCl nanometer sheet, it can be seen from the figure that the XRD of the YbOCl nanometer sheet of growth
Peak is corresponding with the peak perfection that standard card is composed, and illustrates the YbOCl nanometer sheet purity is high of growth, and has good crystallinity.
Fig. 7 is the Raman analysis figure of YbOCl nanometer sheet, it can be seen that there are two Characteristic Raman peak E for YbOCl nanometer sheet toolg
And A1g。
Fig. 8 is EgAnd A1gThe Raman profile of Raman Vibration Mode, E in figuregAnd A1gThe Raman of Raman Vibration Mode is distributed
Figure solid colour illustrates that YbOCl nanometer sheet has good crystallinity and homogeneity.
Fig. 9 is the alternating temperature Raman analysis figure of YbOCl nanometer sheet, it can be seen that the raman characteristic peak of YbOCl nanometer sheet is with temperature
The variation of degree.
Figure 10 is EgAnd A1gThe Raman shift figure that mode varies with temperature respectively can calculate two Raman modes EgWith
A1gSingle order temperature coefficient χ very little, respectively-(4.91 ± 0.41) * 10-3cm-1K-1With-(6.77 ± 0.39) * 10-3cm-1K-1,
Illustrate the interlayer Van der Waals force very little of YbOCl crystal.
It can be seen that two Raman modes E from alternating temperature RamangAnd A1gPeak position vary with temperature very little, stratiform YbOCl receives
Rice piece chemical property is stablized, and cell volume does not vary with temperature substantially, it is possible to which the electrode material as battery material uses.
Figure 11 be YbOCl nanometer sheet Varying-thickness Raman analysis figure, it can be seen that the raman characteristic peak of YbOCl nanometer sheet with
The variation of thickness.
Figure 12 is EgAnd A1gMode is respectively with the Raman shift of thickness change and raman scattering intensity figure, it can be seen that EgAnd A1gMould
The Raman shift of formula illustrates that, in addition to interlayer Van der Waals force, there are also other interlaminar action power in YbOCl crystal with thickness change very little
In play main function.
From the Varying-thickness Raman analysis that relents can be seen that the interlayer model ylid bloom action power of two-dimensional layer YbOCl crystal compared with
Small, so lithium ion, the lesser ion of some radiuses such as sodium ion freely can easily enter the interlayer of YbOCl crystal,
Structure without destroying stratiform YbOCl crystal.So two-dimensional layer YbOCl crystal can be used as intercalation material.
Finally, it should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although
Present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: it still may be used
To modify the technical solutions described in the foregoing embodiments or equivalent replacement of some of the technical features；
And these are modified or replaceed, technical solution of various embodiments of the present invention that it does not separate the essence of the corresponding technical solution spirit and
Range.
Claims (10)
1. a kind of preparation method of ytterbium oxychloride nanometer sheet characterized by comprising with ytterbium oxide and six hydrous ytterbium chlorides be original
Sodium chloride is added in material, carries out chemical vapour deposition reaction and the ytterbium oxychloride nanometer sheet is made.
2. preparation method according to claim 1, which is characterized in that the chemical vapour deposition reaction is in single temperature zone tubular type
It is carried out in furnace, furnace temperature is 730~800 DEG C, and the reaction time is 20~60min；
Preferably, the furnace temperature is 750-760 DEG C, and the reaction time is 30~40min.
3. preparation method according to claim 1 or 2, which is characterized in that the ytterbium oxide, six hydrous ytterbium chlorides and chlorination
The mass ratio of sodium is 9~11:9~11:0.1~2, preferably 10:10:1.
4. preparation method according to claim 2 or 3, which is characterized in that be connected with argon gas in the single temperature zone tube furnace, institute
The flow for stating argon gas is 80~150sccm, preferably 120sccm.
5. the preparation method according to claim 4, which is characterized in that the intraductal pressure of the single temperature zone tube furnace is atmosphere
Pressure.
6. described in any item preparation methods according to claim 1~5, which is characterized in that the ytterbium oxychloride nanometer sheet growth
In the sapphire substrates of two-sided polishing.
7. preparation method according to claim 6, which is characterized in that the preparation method specifically includes:
The ytterbium oxide, six hydrous ytterbium chlorides and sodium chloride are uniformly mixed, are placed in quartz boat, then by the two-sided polishing
Sapphire substrates left-hand thread on the quartz boat equipped with ytterbium oxide, six hydrous ytterbium chlorides and sodium chloride, then by the quartz boat
It is placed in the middle part of single temperature zone tube furnace, heating carries out chemical vapour deposition reaction, after reaction cooled to room temperature.
8. preparation method according to claim 7, which is characterized in that further include: before heating, using argon gas to described
The quartz ampoule of single temperature zone tube furnace is cleaned.
9. ytterbium oxychloride nanometer sheet made from the described in any item preparation methods of claim 1-8.
10. application of the ytterbium oxychloride nanometer sheet as claimed in claim 9 in terms of the electrode material of battery or intercalation material.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111411398A (en) * | 2020-01-17 | 2020-07-14 | 华中科技大学 | Preparation method, product and application of two-dimensional NdOCl single crystal material |
| CN114314673A (en) * | 2021-12-30 | 2022-04-12 | 合肥学院 | Preparation method of flaky FeOCl nano material |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102491429A (en) * | 2011-11-16 | 2012-06-13 | 华东师范大学 | Preparation method of FeOCl |
| CN108217607A (en) * | 2017-12-18 | 2018-06-29 | 国家纳米科学中心 | Bi2OxSe nanometer sheets, preparation method and the usage |
| CN109183156A (en) * | 2018-11-08 | 2019-01-11 | 西北工业大学 | A kind of disulphide monocrystalline and its preparation method and application |
-
2019
- 2019-05-28 CN CN201910453116.3A patent/CN110316752B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102491429A (en) * | 2011-11-16 | 2012-06-13 | 华东师范大学 | Preparation method of FeOCl |
| CN108217607A (en) * | 2017-12-18 | 2018-06-29 | 国家纳米科学中心 | Bi2OxSe nanometer sheets, preparation method and the usage |
| CN109183156A (en) * | 2018-11-08 | 2019-01-11 | 西北工业大学 | A kind of disulphide monocrystalline and its preparation method and application |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111411398A (en) * | 2020-01-17 | 2020-07-14 | 华中科技大学 | Preparation method, product and application of two-dimensional NdOCl single crystal material |
| CN111411398B (en) * | 2020-01-17 | 2021-07-02 | 华中科技大学 | Preparation method, product and application of two-dimensional NdOCl single crystal material |
| CN114314673A (en) * | 2021-12-30 | 2022-04-12 | 合肥学院 | Preparation method of flaky FeOCl nano material |
| CN114314673B (en) * | 2021-12-30 | 2023-10-20 | 合肥学院 | Preparation method of flaky FeOCl nano material |
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