CN110313059B - 用于测量厚膜和高长宽比结构的方法和系统 - Google Patents

用于测量厚膜和高长宽比结构的方法和系统 Download PDF

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CN110313059B
CN110313059B CN201880012604.4A CN201880012604A CN110313059B CN 110313059 B CN110313059 B CN 110313059B CN 201880012604 A CN201880012604 A CN 201880012604A CN 110313059 B CN110313059 B CN 110313059B
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light
illumination
amount
illumination source
plasma
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CN110313059A (zh
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N·沙皮恩
S·克里许南
D·Y·王
A·比特纳
K·普鲁克
K·A·彼得林茨
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KLA Corp
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KLA Tencor Corp
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
    • G01B11/0633—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection using one or more discrete wavelengths
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0641—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of polarization
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0641—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of polarization
    • G01B11/065—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of polarization using one or more discrete wavelengths
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/02—Details
    • G01J3/0205—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows
    • G01J3/0224—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows using polarising or depolarising elements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/02—Details
    • G01J3/10—Arrangements of light sources specially adapted for spectrometry or colorimetry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/2803—Investigating the spectrum using photoelectric array detector
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/30—Measuring the intensity of spectral lines directly on the spectrum itself
    • G01J3/36—Investigating two or more bands of a spectrum by separate detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/42—Absorption spectrometry; Double beam spectrometry; Flicker spectrometry; Reflection spectrometry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/235—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising optical enhancement of defects or not-directly-visible states
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/8422—Investigating thin films, e.g. matrix isolation method
    • G01N2021/8438—Mutilayers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N2021/95676—Masks, reticles, shadow masks
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    • G01—MEASURING; TESTING
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    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • G01N21/211—Ellipsometry

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • General Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Health & Medical Sciences (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
CN201880012604.4A 2017-02-17 2018-02-16 用于测量厚膜和高长宽比结构的方法和系统 Active CN110313059B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201762460668P 2017-02-17 2017-02-17
US62/460,668 2017-02-17
US15/896,978 US10690602B2 (en) 2017-02-17 2018-02-14 Methods and systems for measurement of thick films and high aspect ratio structures
US15/896,978 2018-02-14
PCT/US2018/018457 WO2018152382A1 (en) 2017-02-17 2018-02-16 Methods and systems for measurement of thick films and high aspect ratio structures

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CN110313059A CN110313059A (zh) 2019-10-08
CN110313059B true CN110313059B (zh) 2023-11-03

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US (2) US10690602B2 (enExample)
EP (1) EP3563408B1 (enExample)
JP (1) JP7181211B2 (enExample)
KR (1) KR102629264B1 (enExample)
CN (1) CN110313059B (enExample)
WO (1) WO2018152382A1 (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105091788B (zh) * 2014-05-06 2017-11-07 北京智朗芯光科技有限公司 自动实时快速检测晶片基底二维形貌的装置
US11327012B2 (en) * 2018-05-07 2022-05-10 Unm Rainforest Innovations Method and system for in-line optical scatterometry
US11231362B1 (en) * 2018-12-20 2022-01-25 Kla Corporation Multi-environment polarized infrared reflectometer for semiconductor metrology
US11581264B2 (en) 2019-08-21 2023-02-14 Micron Technology, Inc. Electronic devices comprising overlay marks, memory devices comprising overlay marks, and related methods
WO2021083581A1 (en) * 2019-10-31 2021-05-06 Carl Zeiss Smt Gmbh Fib-sem 3d tomography for measuring shape deviations of high aspect ratio structures
US11099002B2 (en) * 2019-12-09 2021-08-24 General Electric Company Systems and methods of assessing a coating microstructure
LU101529B1 (de) * 2019-12-12 2021-06-15 Aim Systems Gmbh Vorrichtung und Verfahren zur Bestimmung einer Materialeigenschaft eines Prüfkörpers in einem oberflächennahen Prüfkörperbereich
CN114902142B (zh) * 2019-12-30 2025-05-02 Asml荷兰有限公司 光刻设备、量测系统、照射源及其方法
KR102801221B1 (ko) * 2020-04-29 2025-04-30 삼성전자주식회사 웨이퍼 검사 장치 및 방법
WO2021259618A1 (en) * 2020-06-23 2021-12-30 Asml Holding N.V. Lithographic apparatus, metrology systems, illumination switches and methods thereof
US12205040B2 (en) * 2020-10-16 2025-01-21 Samsung Electronics Co., Ltd. Method of training deep learning model for predicting pattern characteristics and method of manufacturing semiconductor device
US12013355B2 (en) * 2020-12-17 2024-06-18 Kla Corporation Methods and systems for compact, small spot size soft x-ray scatterometry
EP4016186A1 (en) 2020-12-18 2022-06-22 ASML Netherlands B.V. Metrology method for measuring an etched trench and associated metrology apparatus
CN112786603B (zh) * 2021-02-03 2021-12-03 长江存储科技有限责任公司 3d存储器件及其量测方法、薄膜量测装置
TWI801149B (zh) * 2021-02-25 2023-05-01 國立臺灣大學 線形掃描彩色共焦量測系統
US12111580B2 (en) * 2021-03-11 2024-10-08 Kla Corporation Optical metrology utilizing short-wave infrared wavelengths
CN114460002A (zh) * 2022-01-25 2022-05-10 北京量拓科技有限公司 一种小入射角的多波段反射系统及其使用方法
US12461041B2 (en) 2022-04-20 2025-11-04 Kla Corporation Measurement of thick films and high aspect ratio structures
CN115560953B (zh) * 2022-09-06 2026-08-04 深圳瑞波光电子有限公司 一种半导体激光器的测试系统和测试方法
US12532710B2 (en) 2022-12-02 2026-01-20 KLA Coporation Measurements of semiconductor structures based on spectral differences at different process steps
CN116518851A (zh) * 2023-03-31 2023-08-01 江苏匠岭半导体有限公司 光学测量组件、半导体光学膜厚和线宽测量装置与方法
US12449352B2 (en) 2023-06-15 2025-10-21 Kla Corporation Optics for measurement of thick films and high aspect ratio structures
US20250076185A1 (en) * 2023-08-31 2025-03-06 Kla Corporation Angle Of Incidence And Azimuth Angle Resolved Spectroscopic Ellipsometry For Semiconductor Metrology
US12693228B2 (en) * 2024-03-12 2026-07-28 General Electric Company Electromagnetic inspection systems and methods
US12704407B2 (en) 2024-04-30 2026-08-11 Applied Materials, Inc. Substrate measurement systems having substrate holders
US12707939B2 (en) 2024-04-30 2026-08-11 Applied Materials, Inc. Substrate holder systems
CN118464843B (zh) * 2024-07-10 2024-11-15 杭州积海半导体有限公司 散射测量方法及散射测量装置

Family Cites Families (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4957368A (en) * 1989-03-16 1990-09-18 Photoacoustic Technology, Inc. Apparatus and process for performing ellipsometric measurements of surfaces
US5166752A (en) 1990-01-11 1992-11-24 Rudolph Research Corporation Simultaneous multiple angle/multiple wavelength ellipsometer and method
JP2938961B2 (ja) * 1990-11-05 1999-08-25 富士通株式会社 赤外線検出装置の製造方法
US5608526A (en) 1995-01-19 1997-03-04 Tencor Instruments Focused beam spectroscopic ellipsometry method and system
US6734967B1 (en) 1995-01-19 2004-05-11 Kla-Tencor Technologies Corporation Focused beam spectroscopic ellipsometry method and system
US5808738A (en) 1995-06-13 1998-09-15 University Of South Florida Multiangle, multiwavelength particle characterization system and method
US5859424A (en) 1997-04-08 1999-01-12 Kla-Tencor Corporation Apodizing filter system useful for reducing spot size in optical measurements and other applications
US6859278B1 (en) 2001-01-16 2005-02-22 J.A. Woollam Co. Inc. Multi-AOI-system for easy changing angles-of-incidence in ellipsometer, polarimeter and reflectometer systems
US6429943B1 (en) 2000-03-29 2002-08-06 Therma-Wave, Inc. Critical dimension analysis with simultaneous multiple angle of incidence measurements
KR100773070B1 (ko) * 2000-07-12 2007-11-02 일렉트로 싸이언티픽 인더스트리이즈 인코포레이티드 Ｉｃ 퓨즈를 하나의 펄스로 절단하기 위한 ｕｖ 레이저시스템 및 방법
US6917433B2 (en) 2000-09-20 2005-07-12 Kla-Tencor Technologies Corp. Methods and systems for determining a property of a specimen prior to, during, or subsequent to an etch process
US6791099B2 (en) 2001-02-14 2004-09-14 Applied Materials, Inc. Laser scanning wafer inspection using nonlinear optical phenomena
US6895075B2 (en) 2003-02-12 2005-05-17 Jordan Valley Applied Radiation Ltd. X-ray reflectometry with small-angle scattering measurement
US7280230B2 (en) 2001-12-19 2007-10-09 Kla-Tencor Technologies Corporation Parametric profiling using optical spectroscopic systems
US6816570B2 (en) 2002-03-07 2004-11-09 Kla-Tencor Corporation Multi-technique thin film analysis tool
US7027142B2 (en) 2002-05-06 2006-04-11 Applied Materials, Israel, Ltd. Optical technique for detecting buried defects in opaque films
US7478019B2 (en) 2005-01-26 2009-01-13 Kla-Tencor Corporation Multiple tool and structure analysis
WO2006091782A1 (en) 2005-02-25 2006-08-31 Accent Optical Technologies, Inc. Apparatus and method for enhanced critical dimension scatterometry
US7839509B2 (en) 2005-07-06 2010-11-23 Advanced Metrology Systems Llc Method of measuring deep trenches with model-based optical spectroscopy
US7297972B2 (en) * 2005-08-26 2007-11-20 Electro Scientific Industries, Inc. Methods and systems for positioning a laser beam spot relative to a semiconductor integrated circuit using a processing target as a metrology target
JP2009537024A (ja) * 2006-02-01 2009-10-22 ザ ジェネラル ホスピタル コーポレイション 少なくとも一つのファイバの少なくとも二つの部位の少なくとも一つを制御する装置
US7567351B2 (en) 2006-02-02 2009-07-28 Kla-Tencor Corporation High resolution monitoring of CD variations
US7499169B2 (en) * 2006-07-19 2009-03-03 Viaspace Inc. Fuel cell and product of combustion humidity sensor
US8139232B2 (en) 2006-07-27 2012-03-20 Rudolph Technologies, Inc. Multiple measurement techniques including focused beam scatterometry for characterization of samples
US7755764B2 (en) 2007-01-26 2010-07-13 Kla-Tencor Corporation Purge gas flow control for high-precision film measurements using ellipsometry and reflectometry
US8699027B2 (en) 2007-07-27 2014-04-15 Rudolph Technologies, Inc. Multiple measurement techniques including focused beam scatterometry for characterization of samples
US7907264B1 (en) 2007-09-07 2011-03-15 Kla-Tencor Corporation Measurement of thin film porosity
US7929667B1 (en) 2008-10-02 2011-04-19 Kla-Tencor Corporation High brightness X-ray metrology
US8248609B2 (en) 2008-11-04 2012-08-21 The Johns Hopkins University Cylindrical illumination confocal spectroscopy system
US8649016B2 (en) 2009-06-23 2014-02-11 Rudolph Technologies, Inc. System for directly measuring the depth of a high aspect ratio etched feature on a wafer
US8841591B2 (en) 2011-04-04 2014-09-23 The Board Of Trustees Of The Leland Stanford Junior University Grating-enhanced optical imaging
GB2489722B (en) 2011-04-06 2017-01-18 Precitec Optronik Gmbh Apparatus and method for determining a depth of a region having a high aspect ratio that protrudes into a surface of a semiconductor wafer
US9228943B2 (en) 2011-10-27 2016-01-05 Kla-Tencor Corporation Dynamically adjustable semiconductor metrology system
DE102011086018A1 (de) 2011-11-09 2013-05-16 Carl Zeiss Ag Verfahren und Anordnung zur Autofokussierung eines Mikroskops
US8879073B2 (en) 2012-02-24 2014-11-04 Kla-Tencor Corporation Optical metrology using targets with field enhancement elements
US10354929B2 (en) * 2012-05-08 2019-07-16 Kla-Tencor Corporation Measurement recipe optimization based on spectral sensitivity and process variation
WO2013181156A1 (en) * 2012-05-29 2013-12-05 Kla-Tencor Corporation Small spot size spectroscopic ellipsometer
US9390892B2 (en) * 2012-06-26 2016-07-12 Kla-Tencor Corporation Laser sustained plasma light source with electrically induced gas flow
WO2014062972A1 (en) 2012-10-18 2014-04-24 Kla-Tencor Corporation Symmetric target design in scatterometry overlay metrology
US9581430B2 (en) 2012-10-19 2017-02-28 Kla-Tencor Corporation Phase characterization of targets
US8860937B1 (en) 2012-10-24 2014-10-14 Kla-Tencor Corp. Metrology systems and methods for high aspect ratio and large lateral dimension structures
US9217717B2 (en) 2012-12-17 2015-12-22 Kla-Tencor Corporation Two dimensional optical detector with multiple shift registers
US10769320B2 (en) 2012-12-18 2020-09-08 Kla-Tencor Corporation Integrated use of model-based metrology and a process model
TWI477766B (zh) * 2012-12-18 2015-03-21 財團法人工業技術研究院 檢測裝置以及檢測方法
US9116103B2 (en) 2013-01-14 2015-08-25 Kla-Tencor Corporation Multiple angles of incidence semiconductor metrology systems and methods
US9291554B2 (en) 2013-02-05 2016-03-22 Kla-Tencor Corporation Method of electromagnetic modeling of finite structures and finite illumination for metrology and inspection
JP6213808B2 (ja) * 2013-03-01 2017-10-18 日本電気株式会社 赤外線検出器の製造方法および波長スペクトル測定装置の製造方法
US10101670B2 (en) 2013-03-27 2018-10-16 Kla-Tencor Corporation Statistical model-based metrology
US9696264B2 (en) * 2013-04-03 2017-07-04 Kla-Tencor Corporation Apparatus and methods for determining defect depths in vertical stack memory
US9875946B2 (en) 2013-04-19 2018-01-23 Kla-Tencor Corporation On-device metrology
US9383661B2 (en) 2013-08-10 2016-07-05 Kla-Tencor Corporation Methods and apparatus for determining focus
US10935893B2 (en) 2013-08-11 2021-03-02 Kla-Tencor Corporation Differential methods and apparatus for metrology of semiconductor targets
US9354212B2 (en) 2014-01-07 2016-05-31 Applied Materials Israel Ltd. Inspection having a segmented pupil
US10210606B2 (en) 2014-10-14 2019-02-19 Kla-Tencor Corporation Signal response metrology for image based and scatterometry overlay measurements
US20160139032A1 (en) 2014-11-19 2016-05-19 Kla-Tencor Corporation Inspection system and method using an off-axis unobscured objective lens
US10072921B2 (en) 2014-12-05 2018-09-11 Kla-Tencor Corporation Methods and systems for spectroscopic beam profile metrology having a first two dimensional detector to detect collected light transmitted by a first wavelength dispersive element
US10887974B2 (en) 2015-06-22 2021-01-05 Kla Corporation High efficiency laser-sustained plasma light source
US9824176B2 (en) * 2015-07-24 2017-11-21 Nanometrics Incorporated Optical critical dimension target design
US10101676B2 (en) * 2015-09-23 2018-10-16 KLA—Tencor Corporation Spectroscopic beam profile overlay metrology
US9921152B2 (en) * 2016-01-15 2018-03-20 Kla-Tencor Corporation Systems and methods for extended infrared spectroscopic ellipsometry
US9921104B2 (en) * 2016-06-11 2018-03-20 Kla-Tencor Corporation Simultaneous multi-angle spectroscopy
US10215693B2 (en) * 2016-09-29 2019-02-26 Kla-Tencor Corporation Infrared spectroscopic reflectometer for measurement of high aspect ratio structures

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