CN110313059B - 用于测量厚膜和高长宽比结构的方法和系统 - Google Patents

用于测量厚膜和高长宽比结构的方法和系统 Download PDF

Info

Publication number
CN110313059B
CN110313059B CN201880012604.4A CN201880012604A CN110313059B CN 110313059 B CN110313059 B CN 110313059B CN 201880012604 A CN201880012604 A CN 201880012604A CN 110313059 B CN110313059 B CN 110313059B
Authority
CN
China
Prior art keywords
light
illumination
amount
illumination source
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201880012604.4A
Other languages
English (en)
Chinese (zh)
Other versions
CN110313059A (zh
Inventor
N·沙皮恩
S·克里许南
D·Y·王
A·比特纳
K·普鲁克
K·A·彼得林茨
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KLA Corp
Original Assignee
KLA Tencor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KLA Tencor Corp filed Critical KLA Tencor Corp
Publication of CN110313059A publication Critical patent/CN110313059A/zh
Application granted granted Critical
Publication of CN110313059B publication Critical patent/CN110313059B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
    • G01B11/0633—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection using one or more discrete wavelengths
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0641—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of polarization
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0641—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of polarization
    • G01B11/065—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of polarization using one or more discrete wavelengths
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/02—Details
    • G01J3/0205—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows
    • G01J3/0224—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows using polarising or depolarising elements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/02—Details
    • G01J3/10—Arrangements of light sources specially adapted for spectrometry or colorimetry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/2803—Investigating the spectrum using photoelectric array detector
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/30—Measuring the intensity of spectral lines directly on the spectrum itself
    • G01J3/36—Investigating two or more bands of a spectrum by separate detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/42—Absorption spectrometry; Double beam spectrometry; Flicker spectrometry; Reflection spectrometry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/8422—Investigating thin films, e.g. matrix isolation method
    • G01N2021/8438—Mutilayers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N2021/95676—Masks, reticles, shadow masks
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • G01N21/211—Ellipsometry

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
CN201880012604.4A 2017-02-17 2018-02-16 用于测量厚膜和高长宽比结构的方法和系统 Active CN110313059B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201762460668P 2017-02-17 2017-02-17
US62/460,668 2017-02-17
US15/896,978 US10690602B2 (en) 2017-02-17 2018-02-14 Methods and systems for measurement of thick films and high aspect ratio structures
US15/896,978 2018-02-14
PCT/US2018/018457 WO2018152382A1 (en) 2017-02-17 2018-02-16 Methods and systems for measurement of thick films and high aspect ratio structures

Publications (2)

Publication Number Publication Date
CN110313059A CN110313059A (zh) 2019-10-08
CN110313059B true CN110313059B (zh) 2023-11-03

Family

ID=63167040

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201880012604.4A Active CN110313059B (zh) 2017-02-17 2018-02-16 用于测量厚膜和高长宽比结构的方法和系统

Country Status (6)

Country Link
US (2) US10690602B2 (enExample)
EP (1) EP3563408B1 (enExample)
JP (1) JP7181211B2 (enExample)
KR (1) KR102629264B1 (enExample)
CN (1) CN110313059B (enExample)
WO (1) WO2018152382A1 (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105091788B (zh) * 2014-05-06 2017-11-07 北京智朗芯光科技有限公司 自动实时快速检测晶片基底二维形貌的装置
WO2019217330A1 (en) * 2018-05-07 2019-11-14 Stc. Unm Method and system for in-line optical scatterometry
US11231362B1 (en) * 2018-12-20 2022-01-25 Kla Corporation Multi-environment polarized infrared reflectometer for semiconductor metrology
US11581264B2 (en) 2019-08-21 2023-02-14 Micron Technology, Inc. Electronic devices comprising overlay marks, memory devices comprising overlay marks, and related methods
WO2021083581A1 (en) * 2019-10-31 2021-05-06 Carl Zeiss Smt Gmbh Fib-sem 3d tomography for measuring shape deviations of high aspect ratio structures
US11099002B2 (en) * 2019-12-09 2021-08-24 General Electric Company Systems and methods of assessing a coating microstructure
LU101529B1 (de) * 2019-12-12 2021-06-15 Aim Systems Gmbh Vorrichtung und Verfahren zur Bestimmung einer Materialeigenschaft eines Prüfkörpers in einem oberflächennahen Prüfkörperbereich
US12124173B2 (en) 2019-12-30 2024-10-22 ASML Netherlands B.V. & ASML Holding N.V. Lithographic apparatus, metrology systems, illumination sources and methods thereof
KR102801221B1 (ko) * 2020-04-29 2025-04-30 삼성전자주식회사 웨이퍼 검사 장치 및 방법
CN115702392A (zh) * 2020-06-23 2023-02-14 Asml控股股份有限公司 光刻设备、量测系统、照射开关及其方法
KR20220050664A (ko) * 2020-10-16 2022-04-25 삼성전자주식회사 패턴 특성의 예측을 위한 딥 러닝 모델의 학습 방법 및 반도체 소자 제조 방법
US12013355B2 (en) * 2020-12-17 2024-06-18 Kla Corporation Methods and systems for compact, small spot size soft x-ray scatterometry
EP4016186A1 (en) * 2020-12-18 2022-06-22 ASML Netherlands B.V. Metrology method for measuring an etched trench and associated metrology apparatus
CN114420696A (zh) * 2021-02-03 2022-04-29 长江存储科技有限责任公司 3d存储器件及其量测方法、薄膜量测装置
TWI812025B (zh) * 2021-02-25 2023-08-11 國立臺灣大學 全域式軸向可調色散鏡組及其彩色共焦量測系統
US12111580B2 (en) * 2021-03-11 2024-10-08 Kla Corporation Optical metrology utilizing short-wave infrared wavelengths
CN114460002A (zh) * 2022-01-25 2022-05-10 北京量拓科技有限公司 一种小入射角的多波段反射系统及其使用方法
CN115560953A (zh) * 2022-09-06 2023-01-03 深圳瑞波光电子有限公司 一种半导体激光器的测试系统和测试方法
CN116518851A (zh) * 2023-03-31 2023-08-01 江苏匠岭半导体有限公司 光学测量组件、半导体光学膜厚和线宽测量装置与方法
US12449352B2 (en) 2023-06-15 2025-10-21 Kla Corporation Optics for measurement of thick films and high aspect ratio structures
US20250076185A1 (en) * 2023-08-31 2025-03-06 Kla Corporation Angle Of Incidence And Azimuth Angle Resolved Spectroscopic Ellipsometry For Semiconductor Metrology
US20250290859A1 (en) * 2024-03-12 2025-09-18 General Electric Company Electromagnetic inspection systems and methods
CN118464843B (zh) * 2024-07-10 2024-11-15 杭州积海半导体有限公司 散射测量方法及散射测量装置

Family Cites Families (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4957368A (en) * 1989-03-16 1990-09-18 Photoacoustic Technology, Inc. Apparatus and process for performing ellipsometric measurements of surfaces
US5166752A (en) 1990-01-11 1992-11-24 Rudolph Research Corporation Simultaneous multiple angle/multiple wavelength ellipsometer and method
JP2938961B2 (ja) * 1990-11-05 1999-08-25 富士通株式会社 赤外線検出装置の製造方法
US5608526A (en) 1995-01-19 1997-03-04 Tencor Instruments Focused beam spectroscopic ellipsometry method and system
US6734967B1 (en) 1995-01-19 2004-05-11 Kla-Tencor Technologies Corporation Focused beam spectroscopic ellipsometry method and system
US5808738A (en) 1995-06-13 1998-09-15 University Of South Florida Multiangle, multiwavelength particle characterization system and method
US5859424A (en) 1997-04-08 1999-01-12 Kla-Tencor Corporation Apodizing filter system useful for reducing spot size in optical measurements and other applications
US6859278B1 (en) 2001-01-16 2005-02-22 J.A. Woollam Co. Inc. Multi-AOI-system for easy changing angles-of-incidence in ellipsometer, polarimeter and reflectometer systems
US6429943B1 (en) 2000-03-29 2002-08-06 Therma-Wave, Inc. Critical dimension analysis with simultaneous multiple angle of incidence measurements
GB2386184B (en) * 2000-07-12 2004-05-26 Electro Scient Ind Inc UV laser system and method for single pulse severing of IC fuses
AU2001295060A1 (en) 2000-09-20 2002-04-02 Kla-Tencor-Inc. Methods and systems for semiconductor fabrication processes
US6791099B2 (en) 2001-02-14 2004-09-14 Applied Materials, Inc. Laser scanning wafer inspection using nonlinear optical phenomena
US6895075B2 (en) 2003-02-12 2005-05-17 Jordan Valley Applied Radiation Ltd. X-ray reflectometry with small-angle scattering measurement
WO2003054475A2 (en) 2001-12-19 2003-07-03 Kla-Tencor Technologies Corporation Parametric profiling using optical spectroscopic systems
US6816570B2 (en) 2002-03-07 2004-11-09 Kla-Tencor Corporation Multi-technique thin film analysis tool
US7027142B2 (en) 2002-05-06 2006-04-11 Applied Materials, Israel, Ltd. Optical technique for detecting buried defects in opaque films
US7478019B2 (en) 2005-01-26 2009-01-13 Kla-Tencor Corporation Multiple tool and structure analysis
WO2006093800A1 (en) 2005-02-25 2006-09-08 Nanometrics Incorporated Apparatus and method for enhanced critical dimension scatterometry
WO2007004177A2 (en) 2005-07-06 2007-01-11 Advanced Metrology Systems Llc. Method of measuring deep trenches with model-based optical spectroscopy
US7297972B2 (en) * 2005-08-26 2007-11-20 Electro Scientific Industries, Inc. Methods and systems for positioning a laser beam spot relative to a semiconductor integrated circuit using a processing target as a metrology target
WO2007149601A2 (en) * 2006-02-01 2007-12-27 The General Hospital Corporation Apparatus for controlling at least one of at least two sections of at least one fiber
US7567351B2 (en) 2006-02-02 2009-07-28 Kla-Tencor Corporation High resolution monitoring of CD variations
US7499169B2 (en) * 2006-07-19 2009-03-03 Viaspace Inc. Fuel cell and product of combustion humidity sensor
WO2008013909A2 (en) 2006-07-27 2008-01-31 Rudolph Technologies, Inc. Multiple measurement techniques including focused beam scatterometry for characterization of samples
US7755764B2 (en) 2007-01-26 2010-07-13 Kla-Tencor Corporation Purge gas flow control for high-precision film measurements using ellipsometry and reflectometry
US8699027B2 (en) 2007-07-27 2014-04-15 Rudolph Technologies, Inc. Multiple measurement techniques including focused beam scatterometry for characterization of samples
US7907264B1 (en) 2007-09-07 2011-03-15 Kla-Tencor Corporation Measurement of thin film porosity
US7929667B1 (en) 2008-10-02 2011-04-19 Kla-Tencor Corporation High brightness X-ray metrology
US8248609B2 (en) 2008-11-04 2012-08-21 The Johns Hopkins University Cylindrical illumination confocal spectroscopy system
US8649016B2 (en) 2009-06-23 2014-02-11 Rudolph Technologies, Inc. System for directly measuring the depth of a high aspect ratio etched feature on a wafer
US8841591B2 (en) 2011-04-04 2014-09-23 The Board Of Trustees Of The Leland Stanford Junior University Grating-enhanced optical imaging
GB2489722B (en) 2011-04-06 2017-01-18 Precitec Optronik Gmbh Apparatus and method for determining a depth of a region having a high aspect ratio that protrudes into a surface of a semiconductor wafer
US9228943B2 (en) 2011-10-27 2016-01-05 Kla-Tencor Corporation Dynamically adjustable semiconductor metrology system
DE102011086018A1 (de) 2011-11-09 2013-05-16 Carl Zeiss Ag Verfahren und Anordnung zur Autofokussierung eines Mikroskops
US8879073B2 (en) 2012-02-24 2014-11-04 Kla-Tencor Corporation Optical metrology using targets with field enhancement elements
US10354929B2 (en) * 2012-05-08 2019-07-16 Kla-Tencor Corporation Measurement recipe optimization based on spectral sensitivity and process variation
WO2013181156A1 (en) * 2012-05-29 2013-12-05 Kla-Tencor Corporation Small spot size spectroscopic ellipsometer
US9390892B2 (en) 2012-06-26 2016-07-12 Kla-Tencor Corporation Laser sustained plasma light source with electrically induced gas flow
WO2014062972A1 (en) 2012-10-18 2014-04-24 Kla-Tencor Corporation Symmetric target design in scatterometry overlay metrology
US9581430B2 (en) 2012-10-19 2017-02-28 Kla-Tencor Corporation Phase characterization of targets
US8860937B1 (en) 2012-10-24 2014-10-14 Kla-Tencor Corp. Metrology systems and methods for high aspect ratio and large lateral dimension structures
US9217717B2 (en) 2012-12-17 2015-12-22 Kla-Tencor Corporation Two dimensional optical detector with multiple shift registers
US10769320B2 (en) 2012-12-18 2020-09-08 Kla-Tencor Corporation Integrated use of model-based metrology and a process model
TWI477766B (zh) * 2012-12-18 2015-03-21 Ind Tech Res Inst 檢測裝置以及檢測方法
US9116103B2 (en) 2013-01-14 2015-08-25 Kla-Tencor Corporation Multiple angles of incidence semiconductor metrology systems and methods
US9291554B2 (en) 2013-02-05 2016-03-22 Kla-Tencor Corporation Method of electromagnetic modeling of finite structures and finite illumination for metrology and inspection
JP6213808B2 (ja) 2013-03-01 2017-10-18 日本電気株式会社 赤外線検出器の製造方法および波長スペクトル測定装置の製造方法
US10101670B2 (en) 2013-03-27 2018-10-16 Kla-Tencor Corporation Statistical model-based metrology
US9696264B2 (en) 2013-04-03 2017-07-04 Kla-Tencor Corporation Apparatus and methods for determining defect depths in vertical stack memory
US9875946B2 (en) 2013-04-19 2018-01-23 Kla-Tencor Corporation On-device metrology
US9383661B2 (en) 2013-08-10 2016-07-05 Kla-Tencor Corporation Methods and apparatus for determining focus
US10935893B2 (en) 2013-08-11 2021-03-02 Kla-Tencor Corporation Differential methods and apparatus for metrology of semiconductor targets
US9354212B2 (en) 2014-01-07 2016-05-31 Applied Materials Israel Ltd. Inspection having a segmented pupil
US10210606B2 (en) 2014-10-14 2019-02-19 Kla-Tencor Corporation Signal response metrology for image based and scatterometry overlay measurements
US20160139032A1 (en) * 2014-11-19 2016-05-19 Kla-Tencor Corporation Inspection system and method using an off-axis unobscured objective lens
US10072921B2 (en) 2014-12-05 2018-09-11 Kla-Tencor Corporation Methods and systems for spectroscopic beam profile metrology having a first two dimensional detector to detect collected light transmitted by a first wavelength dispersive element
US10887974B2 (en) 2015-06-22 2021-01-05 Kla Corporation High efficiency laser-sustained plasma light source
US9824176B2 (en) * 2015-07-24 2017-11-21 Nanometrics Incorporated Optical critical dimension target design
US10101676B2 (en) * 2015-09-23 2018-10-16 KLA—Tencor Corporation Spectroscopic beam profile overlay metrology
US9921152B2 (en) * 2016-01-15 2018-03-20 Kla-Tencor Corporation Systems and methods for extended infrared spectroscopic ellipsometry
US9921104B2 (en) * 2016-06-11 2018-03-20 Kla-Tencor Corporation Simultaneous multi-angle spectroscopy
US10215693B2 (en) * 2016-09-29 2019-02-26 Kla-Tencor Corporation Infrared spectroscopic reflectometer for measurement of high aspect ratio structures

Also Published As

Publication number Publication date
US10690602B2 (en) 2020-06-23
KR102629264B1 (ko) 2024-01-24
EP3563408A1 (en) 2019-11-06
KR20190110146A (ko) 2019-09-27
CN110313059A (zh) 2019-10-08
US20180238814A1 (en) 2018-08-23
WO2018152382A1 (en) 2018-08-23
US11119050B2 (en) 2021-09-14
JP2020508568A (ja) 2020-03-19
US20200284733A1 (en) 2020-09-10
EP3563408B1 (en) 2025-12-17
EP3563408A4 (en) 2020-09-09
JP7181211B2 (ja) 2022-11-30

Similar Documents

Publication Publication Date Title
CN110313059B (zh) 用于测量厚膜和高长宽比结构的方法和系统
JP7579408B2 (ja) 高アスペクト比構造の測定のための中赤外分光法及びシステム
TWI746498B (zh) 用於擴展之紅外線光譜橢偏量測之系統及方法
CN109690235B (zh) 用于测量高纵横比结构的红外光谱反射计
US20240201073A1 (en) Methods And Systems For Scatterometry Based Metrology Of Structures Fabricated On Transparent Substrates
US12449352B2 (en) Optics for measurement of thick films and high aspect ratio structures
US20250110042A1 (en) Spectroscopic Ellipsometry With Detector Resolved Numerical Aperture For Deep Structure Metrology
US20250076185A1 (en) Angle Of Incidence And Azimuth Angle Resolved Spectroscopic Ellipsometry For Semiconductor Metrology
TW202540632A (zh) 用於深結構度量衡之具有偵測器解析數值孔徑之光譜橢圓偏振量測
TW202526304A (zh) 半導體結構之多遍次光學測量

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
GR01 Patent grant
GR01 Patent grant
TG01 Patent term adjustment
TG01 Patent term adjustment