CN110308337A - A non-contact optical measurement device and method for the coercive field of a ferroelectric crystal - Google Patents
A non-contact optical measurement device and method for the coercive field of a ferroelectric crystal Download PDFInfo
- Publication number
- CN110308337A CN110308337A CN201910636469.7A CN201910636469A CN110308337A CN 110308337 A CN110308337 A CN 110308337A CN 201910636469 A CN201910636469 A CN 201910636469A CN 110308337 A CN110308337 A CN 110308337A
- Authority
- CN
- China
- Prior art keywords
- ferroelectric crystal
- coercive field
- ferroelectric
- output
- contact optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 102
- 230000003287 optical effect Effects 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 title claims abstract description 21
- 238000005259 measurement Methods 0.000 title claims abstract description 17
- 230000005684 electric field Effects 0.000 claims abstract description 38
- 238000000691 measurement method Methods 0.000 claims abstract description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 4
- 230000002238 attenuated effect Effects 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 238000001514 detection method Methods 0.000 abstract description 10
- 230000007547 defect Effects 0.000 abstract description 5
- 239000000463 material Substances 0.000 abstract description 2
- 230000005284 excitation Effects 0.000 description 7
- 238000012360 testing method Methods 0.000 description 6
- 238000000149 argon plasma sintering Methods 0.000 description 4
- 238000010998 test method Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- CPBQJMYROZQQJC-UHFFFAOYSA-N helium neon Chemical compound [He].[Ne] CPBQJMYROZQQJC-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 239000007777 multifunctional material Substances 0.000 description 1
- 230000035772 mutation Effects 0.000 description 1
- 238000010606 normalization Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000004627 transmission electron microscopy Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
- G01R29/08—Measuring electromagnetic field characteristics
- G01R29/0864—Measuring electromagnetic field characteristics characterised by constructional or functional features
- G01R29/0878—Sensors; antennas; probes; detectors
- G01R29/0885—Sensors; antennas; probes; detectors using optical probes, e.g. electro-optical, luminescent, glow discharge, or optical interferometers
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
一种铁电晶体矫顽场的非接触式光学测量装置和方法，涉及材料性质的光学检测技术领域，为了解决现有铁电晶体电学测量方法易受接触状态、空间电荷或缺陷电荷影响的问题。控温箱设有2个通光孔，铁电晶体位于控温箱内，激光器输出的连续激光通过一个通光孔入射至铁电晶体，铁电晶体透射的光通过另一个通光孔入射至光电探测器的光敏面，光电探测器的输出端连接数字示波器的输入端，数字示波器的透射光强度输出端连接计算机的透射光强度输入端；交流电压源用于为铁电晶体施加交流电压；计算机用于控制交流电压源输出电压的频率和幅值，还用于计算施加的电场，并存储施加的电场及数字示波器输出的透射光强度。本发明适用于测量铁电晶体的矫顽场。
A non-contact optical measurement device and method for the coercive field of a ferroelectric crystal, relating to the technical field of optical detection of material properties, in order to solve the problem that the existing ferroelectric crystal electrical measurement method is easily affected by contact state, space charge or defect charge . The temperature control box has two light holes, the ferroelectric crystal is located in the temperature control box, the continuous laser output from the laser enters the ferroelectric crystal through one light hole, and the light transmitted by the ferroelectric crystal enters the ferroelectric crystal through the other light hole. The photosensitive surface of the photodetector, the output terminal of the photodetector is connected to the input terminal of the digital oscilloscope, and the transmitted light intensity output terminal of the digital oscilloscope is connected to the transmitted light intensity input terminal of the computer; the AC voltage source is used for applying AC voltage to the ferroelectric crystal; The computer is used to control the frequency and amplitude of the output voltage of the AC voltage source, and is also used to calculate the applied electric field and store the applied electric field and the transmitted light intensity output by the digital oscilloscope. The invention is suitable for measuring the coercive field of the ferroelectric crystal.
Description
技术领域technical field
本发明涉及材料性质的光学检测技术领域，具体涉及铁电晶体矫顽场的非接触式光学测量技术。The invention relates to the technical field of optical detection of material properties, in particular to the non-contact optical measurement technology of the coercive field of ferroelectric crystals.
背景技术Background technique
铁电晶体是一种多功能材料，具有优异的介电、压电、电光、光折变和声学性质，在铁电存储器、大容量电容器、压电传感器、电光调制器和超声换能器等领域具有重要应用。铁电晶体优异的宏观性质与其微观畴结构密切相关。铁电畴是铁电晶体内部自发极化相同的区域，畴结构是由不同取向的电畴组成的微观结构，所以，了解铁电畴的特性是探索铁电晶体宏观性质来源及后期进行改性设计的重要前提。铁电畴的特性，可以从静态和动态两方面进行测量。目前畴的静态特性的测量方法较多，例如偏光显微镜、扫描电子显微镜、透射电子显微镜和压电力显微镜等，其中偏光显微镜具有微米级分辨率，扫描电子显微镜和压电力显微镜等具有百纳米级分辨率，透射电子显微镜具有纳米级分辨率。这些都属于铁电畴的静态测量手段。Ferroelectric crystals are multifunctional materials with excellent dielectric, piezoelectric, electro-optic, photorefractive and acoustic properties, and are widely used in ferroelectric memories, large-capacity capacitors, piezoelectric sensors, electro-optic modulators and ultrasonic transducers, etc. field has important applications. The excellent macroscopic properties of ferroelectric crystals are closely related to their microscopic domain structures. The ferroelectric domain is the area with the same spontaneous polarization inside the ferroelectric crystal. The domain structure is a microscopic structure composed of electric domains with different orientations. Therefore, understanding the characteristics of the ferroelectric domain is to explore the source of the macroscopic properties of the ferroelectric crystal and modify it later. important prerequisite for design. The properties of ferroelectric domains can be measured both statically and dynamically. At present, there are many methods for measuring the static characteristics of domains, such as polarizing microscope, scanning electron microscope, transmission electron microscope, and piezoelectric force microscope. rate, transmission electron microscopy has nanoscale resolution. These are all static measurements of ferroelectric domains.
关于铁电畴的动态测量方法，目前常用的是基于Sawyer-Tower电路的电滞回线测试法，以便确定铁电晶体内部电畴翻转的矫顽场。这种方法具有制样方便、测试简单等优点，但同时存在若干缺点。缺点之一是Sawyer-Tower电路测试法是一种接触式电学测量方法，测试夹具与样品电极之间的接触状态对矫顽场的测试结果有一定影响；缺点之二是这是一种电荷采集式测试方法，与铁电畴反转无关的空间电荷或缺陷电荷也会对矫顽场的测试结果产生影响，特别是内部缺陷较多的样品，样品中存在大量的非束缚电荷，会使得测量结果不可信，产生所谓“漏电”的现象发生；缺点之三是高温或低频测试时，由于高温或低频下缺陷电荷的迁移加剧，会使得测量结果误差进一步被放大。Regarding the dynamic measurement method of the ferroelectric domain, the hysteresis loop test method based on the Sawyer-Tower circuit is commonly used at present, in order to determine the coercive field of the domain reversal inside the ferroelectric crystal. This method has the advantages of convenient sample preparation and simple testing, but it also has some disadvantages. One of the disadvantages is that the Sawyer-Tower circuit test method is a contact electrical measurement method, and the contact state between the test fixture and the sample electrode has a certain influence on the test results of the coercive field; the second disadvantage is that it is a charge collection method. In the conventional test method, space charges or defect charges that have nothing to do with ferroelectric domain inversion will also affect the test results of the coercive field, especially for samples with many internal defects. There are a large number of unbound charges in the sample, which will make the measurement The results are unreliable, and the so-called "leakage" phenomenon occurs; the third disadvantage is that during high temperature or low frequency testing, the error of the measurement result will be further amplified due to the intensified migration of defect charges at high temperature or low frequency.
发明内容Contents of the invention
本发明的目的是为了解决现有铁电晶体电学测量方法易受接触状态、空间电荷或缺陷电荷影响的问题，从而提供一种铁电晶体矫顽场的非接触式光学测量装置和方法。The object of the present invention is to solve the problem that existing ferroelectric crystal electrical measurement methods are easily affected by contact state, space charge or defect charge, thereby providing a non-contact optical measurement device and method for ferroelectric crystal coercive field.
本发明所述的一种铁电晶体矫顽场的非接触式光学测量装置，包括交流电压源1、控温箱2、激光器3、光电探测器4、数字示波器5和计算机6；A non-contact optical measurement device for the coercive field of a ferroelectric crystal according to the present invention comprises an AC voltage source 1, a temperature control box 2, a laser 3, a photodetector 4, a digital oscilloscope 5 and a computer 6;
控温箱2设有2个通光孔2-1，铁电晶体7位于控温箱2内，激光器3输出的连续激光通过一个通光孔2-1入射至铁电晶体7，铁电晶体7透射的光通过另一个通光孔2-1入射至光电探测器4的光敏面，光电探测器4的输出端连接数字示波器5的输入端，数字示波器5的透射光强度输出端连接计算机6的透射光强度输入端；The temperature control box 2 is provided with two light holes 2-1, and the ferroelectric crystal 7 is located in the temperature control box 2. The continuous laser output from the laser 3 enters the ferroelectric crystal 7 through a light hole 2-1, and the ferroelectric crystal 7 The transmitted light is incident on the photosensitive surface of the photodetector 4 through another light hole 2-1, the output terminal of the photodetector 4 is connected to the input terminal of the digital oscilloscope 5, and the transmitted light intensity output terminal of the digital oscilloscope 5 is connected to the computer 6 The input end of the transmitted light intensity;
交流电压源1用于为铁电晶体7施加交流电压；The AC voltage source 1 is used to apply an AC voltage to the ferroelectric crystal 7;
计算机6用于控制交流电压源1输出电压的频率和幅值，还用于计算施加的电场，并存储施加的电场及数字示波器5输出的透射光强度。The computer 6 is used to control the frequency and amplitude of the output voltage of the AC voltage source 1 , and is also used to calculate the applied electric field and store the applied electric field and the transmitted light intensity output by the digital oscilloscope 5 .
优选的是，铁电晶体7的尺寸大于2mm×2mm×0.5mm。Preferably, the size of the ferroelectric crystal 7 is larger than 2mm×2mm×0.5mm.
优选的是，还包括反射镜8；Preferably, a mirror 8 is also included;
激光器3输出的连续激光经反射镜8反射至铁电晶体7。The continuous laser light output by the laser 3 is reflected to the ferroelectric crystal 7 by the mirror 8 .
优选的是，还包括衰减片9；Preferably, an attenuation sheet 9 is also included;
激光器3输出的连续激光经衰减片9功率衰减后入射至铁电晶体7。The continuous laser output from the laser 3 is incident on the ferroelectric crystal 7 after being attenuated by the attenuation sheet 9 .
优选的是，还包括第一凸透镜10；Preferably, a first convex lens 10 is also included;
第一凸透镜10使连续激光聚焦在铁电晶体7内部。The first convex lens 10 focuses the continuous laser light inside the ferroelectric crystal 7 .
优选的是，还包括第二凸透镜11；Preferably, a second convex lens 11 is also included;
第二凸透镜11将铁电晶体7透射的光聚焦在光电探测器4的光敏面。The second convex lens 11 focuses the light transmitted by the ferroelectric crystal 7 on the photosensitive surface of the photodetector 4 .
本发明所述的一种铁电晶体矫顽场的非接触式光学测量方法，该方法包括：A non-contact optical measurement method of a ferroelectric crystal coercive field according to the present invention, the method comprising:
步骤一、交流电压源1为铁电晶体7施加交流电压，激光器3输出的连续激光入射至铁电晶体7，计算机6存储施加的电场及数字示波器5输出的透射光强度；Step 1, the AC voltage source 1 applies an AC voltage to the ferroelectric crystal 7, the continuous laser light output by the laser 3 is incident on the ferroelectric crystal 7, and the computer 6 stores the applied electric field and the transmitted light intensity output by the digital oscilloscope 5;
步骤二、以施加的电场为横坐标、归一化的透射光强度为纵坐标，将纵坐标数据对横纵坐标数据求一阶导数并取绝对值，绝对值最大值对应的电场即为铁电晶体7的矫顽场；Step 2. Take the applied electric field as the abscissa and the normalized transmitted light intensity as the ordinate, calculate the first derivative of the ordinate data with respect to the abscissa and ordinate data and take the absolute value, and the electric field corresponding to the maximum absolute value is the iron The coercive field of transistor 7;
该方法基于一种铁电晶体矫顽场的非接触式光学测量装置实现。The method is realized based on a non-contact optical measurement device for the coercive field of a ferroelectric crystal.
优选的是，该方法还包括：在步骤一之前对待测铁电晶体进行晶体学定向，然后按晶体学方向进行切割，再依次进行被电极和抛光处理，得到满足要求的铁电晶体7。Preferably, the method further includes: performing crystallographic orientation on the ferroelectric crystal to be tested before step 1, then cutting according to the crystallographic direction, and then sequentially performing electrodeposition and polishing treatment to obtain the ferroelectric crystal 7 that meets the requirements.
相比于电学检测方法，光学检测方法具有非接触的优点。由于光波长只有百纳米尺度，当光波通过具有畴结构的铁电晶体时，会发生光的散射现象，导致从铁电晶体出射的光强度不同于入射的光强度。基于光散射原理，当铁电晶体置于变化的电场中时，电场会引起畴的状态发生改变，从而可以改变电畴对光的散射作用，当电场达到铁电晶体的矫顽场时，大量的畴开始翻转，这时光散射效应最明显，可导致从铁电晶体出射的光强度出现显著变化，突变点处的电场就是铁电晶体的矫顽场。这种非接触式方法的最大优点是可以消除铁电晶体内部的空间电荷的运动对测量结果的影响，以便获得真实反映铁电畴翻转的矫顽场。Compared with electrical detection methods, optical detection methods have the advantage of being non-contact. Since the wavelength of light is only on the scale of hundreds of nanometers, when light waves pass through a ferroelectric crystal with a domain structure, light scattering occurs, resulting in the intensity of light emitted from the ferroelectric crystal being different from the intensity of incident light. Based on the principle of light scattering, when the ferroelectric crystal is placed in a changing electric field, the electric field will cause the state of the domain to change, thereby changing the scattering effect of the electric domain on light. When the electric field reaches the coercive field of the ferroelectric crystal, a large number of At this time, the light scattering effect is the most obvious, which can lead to a significant change in the light intensity emitted from the ferroelectric crystal. The electric field at the mutation point is the coercive field of the ferroelectric crystal. The biggest advantage of this non-contact method is that it can eliminate the influence of space charge movement inside the ferroelectric crystal on the measurement results, so as to obtain the coercive field that truly reflects the ferroelectric domain flip.
本发明运用不同施加电场阶段畴翻转导致的光散射不同的方法实现了铁电晶体矫顽场的非接触式精确检测。该检测方法还可以获得不同温度下的铁电晶体的矫顽场，以便研究矫顽场随温度的变化规律。本发明适用于测量所有透明铁电晶体的矫顽场。The invention realizes the non-contact accurate detection of the coercive field of the ferroelectric crystal by using different methods of light scattering caused by domain inversion in different applied electric field stages. The detection method can also obtain the coercive field of the ferroelectric crystal at different temperatures, so as to study the change law of the coercive field with temperature. The invention is suitable for measuring the coercive field of all transparent ferroelectric crystals.
附图说明Description of drawings
图1是具体实施方式中的外电场激励系统的结构示意图；Fig. 1 is the structural representation of the external electric field excitation system in the specific embodiment;
图2是具体实施方式中的光学检测系统的结构示意图；Fig. 2 is a schematic structural view of an optical detection system in a specific embodiment;
图3是本发明的一种铁电晶体矫顽场的非接触式光学测量装置的结构示意图；Fig. 3 is the structural representation of the non-contact optical measurement device of a kind of ferroelectric crystal coercive field of the present invention;
图4是实施例的[001]取向的PMN-0.33PT弛豫铁电晶体在施加外电场激励下的透射光强度的归一化值；Fig. 4 is the normalized value of the transmitted light intensity of the PMN-0.33PT relaxation ferroelectric crystal of the [001] orientation of the embodiment under the excitation of an external electric field;
图5是实施例的[001]取向的PMN-0.33PT弛豫铁电晶体在施加外电场激励下的归一化的透射光强度对施加外电场一阶导数的绝对值。Fig. 5 is the absolute value of the normalized transmitted light intensity versus the first order derivative of the applied external electric field for the [001] oriented PMN-0.33PT relaxor ferroelectric crystal of the embodiment under the excitation of the applied external electric field.
具体实施方式Detailed ways
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.
需要说明的是，在不冲突的情况下，本发明中的实施例及实施例中的特征可以相互组合。It should be noted that, in the case of no conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other.
下面结合附图和具体实施例对本发明作进一步说明，但不作为本发明的限定。The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments, but not as a limitation of the present invention.
本实施方式的一种铁电晶体矫顽场的非接触式光学测量装置，包括外电场激励系统和光学检测系统；A non-contact optical measurement device for the coercive field of a ferroelectric crystal according to this embodiment, comprising an external electric field excitation system and an optical detection system;
外电场激励系统：程控高压电源(精度1伏)、高压电线、GPIB总线、控温箱2(带通光孔)、铁电晶体7和计算机6。交流电压源1采用程控高压电源实现。其中，程控高压电源通过GPIB总线与计算机6连接，并通过Labview编程实现不同频率和幅值的交流电压的输出控制。将铁电晶体7固定在带通光孔的控温箱2中，晶体中心与通光孔中心对齐，具体装置如图1所示。External electric field excitation system: program-controlled high-voltage power supply (precision 1 volt), high-voltage wires, GPIB bus, temperature control box 2 (with light hole), ferroelectric crystal 7 and computer 6. The AC voltage source 1 is realized by a program-controlled high-voltage power supply. Among them, the program-controlled high-voltage power supply is connected to the computer 6 through the GPIB bus, and the output control of AC voltages with different frequencies and amplitudes is realized through Labview programming. The ferroelectric crystal 7 is fixed in the temperature control box 2 with a light hole, and the center of the crystal is aligned with the center of the light hole. The specific device is shown in FIG. 1 .
光学检测系统：Optical detection system:
包括氦氖激光器、衰减片9、反射镜8、第一凸透镜10、第二凸透镜11、光电探测器4、数字示波器5和计算机6。首先用氦氖激光器输出功率为50mW、波长为633nm的连续激光。当激光器输出功率较高，采用衰减片9降低入射到晶体上的光强度。在测试尺寸较小的样品时，采取减小照射到晶片表面上的光斑直径的方法，即使用第一凸透镜10对激光器发出的平行光进行聚焦，使得经第一凸透镜10的光束在晶体内部聚焦。从晶体另一表面透射的光经第二凸透镜11会聚后进入光电探测器，将光电探测器同数字示波器连接以便检测和采集信号，由计算机6完成数据的自动存储，光学检测系统搭建完成，具体光路图如图2所示。It includes a helium-neon laser, an attenuation plate 9 , a mirror 8 , a first convex lens 10 , a second convex lens 11 , a photodetector 4 , a digital oscilloscope 5 and a computer 6 . Firstly, a continuous laser with output power of 50mW and wavelength of 633nm is used with He-Ne laser. When the output power of the laser is high, the attenuation sheet 9 is used to reduce the light intensity incident on the crystal. When testing a sample with a small size, the method of reducing the spot diameter irradiated on the wafer surface is adopted, that is, the first convex lens 10 is used to focus the parallel light emitted by the laser, so that the beam passing through the first convex lens 10 is focused inside the crystal . The light transmitted from the other surface of the crystal is converged by the second convex lens 11 and then enters the photodetector, the photodetector is connected with the digital oscilloscope to detect and collect signals, the computer 6 completes the automatic storage of data, and the optical detection system is built. Specifically The light path diagram is shown in Figure 2.
本实施方式所述的一种铁电晶体矫顽场的非接触式光学测量方法，该方法包括：A non-contact optical measurement method for the coercive field of a ferroelectric crystal described in this embodiment, the method includes:
步骤一、使用X射线衍射仪对待测铁电晶体进行晶体学定向，然后按晶体学方向进行切割，得到待测晶体，要求晶体尺寸大于2mm×2mm×0.5mm，其中2mm厚度方向为铁电晶体施加交变电场的方向，0.5mm厚度方向为激光通过的方向。对晶体进行被电极处理后，分别使用9μm、3μm的研磨粉和0.5μm的金刚石抛光液对晶片表面进行抛光处理，使晶体表面完全满足光学实验的需求，得到铁电晶体7。晶体尺寸过小会导致电极面积小，不易处理，因此对晶体最小尺寸有要求；采用晶体最薄的方向为激光通过的方向，有利于提高透光率。Step 1. Use an X-ray diffractometer to perform crystallographic orientation on the ferroelectric crystal to be tested, and then cut according to the crystallographic direction to obtain the crystal to be tested. The crystal size is required to be greater than 2mm×2mm×0.5mm, and the 2mm thickness direction is the ferroelectric crystal The direction in which the alternating electric field is applied, the 0.5mm thickness direction is the direction in which the laser passes. After the crystal was treated by electrodes, the surface of the wafer was polished with 9 μm and 3 μm grinding powder and 0.5 μm diamond polishing liquid, so that the crystal surface fully met the requirements of the optical experiment, and ferroelectric crystal 7 was obtained. If the crystal size is too small, the electrode area will be small and difficult to handle, so there is a requirement for the minimum size of the crystal; the thinnest direction of the crystal is used as the direction through which the laser passes, which is conducive to improving the light transmittance.
步骤二、交流电压源1为铁电晶体7施加交流电压，激光器3输出的连续激光入射至铁电晶体7，计算机6存储施加的电场，与此同时，采集数字示波器5上显示的电信号并记录电信号的大小；Step 2, the AC voltage source 1 applies an AC voltage to the ferroelectric crystal 7, the continuous laser light output by the laser 3 is incident on the ferroelectric crystal 7, the computer 6 stores the applied electric field, and at the same time, collects the electrical signal displayed on the digital oscilloscope 5 and Record the size of the electrical signal;
步骤三、以施加的电场为横坐标、归一化的透射光强度为纵坐标，如图4所示。将纵坐标数据对横纵坐标数据求一阶导数并取绝对值，如图5所示，图5中的最高点对应图4中变化剧烈的位置，此处的电场即为铁电晶体7的矫顽场；Step 3: Take the applied electric field as the abscissa and the normalized transmitted light intensity as the ordinate, as shown in FIG. 4 . Calculate the first order derivative and take the absolute value of the ordinate data to the abscissa and ordinate data, as shown in Figure 5, the highest point in Figure 5 corresponds to the position of the drastic change in Figure 4, and the electric field here is the ferroelectric crystal 7 coercive field;
该方法基于一种铁电晶体矫顽场的非接触式光学测量装置实现。The method is realized based on a non-contact optical measurement device for the coercive field of a ferroelectric crystal.
实施例：Example:
一种铁电晶体矫顽场的非接触式光学测量方法，该方法包括：A non-contact optical measurement method for the coercive field of a ferroelectric crystal, the method comprising:
步骤一、使用X射线衍射仪对0.67Pb(Mg1/3Nb2/3)O3-0.33PbTiO3(简称为PMN-0.33PT)铁电晶体进行晶体学定向，然后按晶体学方向进行切割，得到[001]取向的晶体，晶体尺寸为2mm×3mm×1mm，其中2mm厚度方向为铁电晶体施加交变电场的方向，1mm厚度方向为激光通过的方向。对晶体进行被电极处理后，分别使用9μm、3μm的研磨粉和0.5μm的金刚石抛光液对晶片表面进行抛光处理，使晶片表面完全满足光学实验的需求，得到铁电晶体7。Step 1. Crystallographic orientation of 0.67Pb(Mg 1/3 Nb 2/3 )O 3 -0.33PbTiO 3 (referred to as PMN-0.33PT) ferroelectric crystal by X-ray diffractometer, and then cutting according to the crystallographic direction , to obtain [001] oriented crystals, the crystal size is 2mm × 3mm × 1mm, wherein the 2mm thickness direction is the direction of the ferroelectric crystal to apply the alternating electric field, and the 1mm thickness direction is the direction of the laser passing through. After the crystal was treated with electrodes, the surface of the wafer was polished with 9 μm and 3 μm grinding powder and 0.5 μm diamond polishing solution, so that the surface of the wafer fully met the requirements of the optical experiment, and ferroelectric crystal 7 was obtained.
步骤二、计算机控制交流电压输出频率为0.005Hz，交流电压源1为铁电晶体7施加交流电压，激光器3输出的连续激光入射至铁电晶体7，计算机6存储施加的电场，与此同时，采集数字示波器5上显示的电信号并记录电信号的大小；Step 2, the computer controls the output frequency of the AC voltage to be 0.005 Hz, the AC voltage source 1 applies an AC voltage to the ferroelectric crystal 7, the continuous laser output from the laser 3 is incident on the ferroelectric crystal 7, and the computer 6 stores the applied electric field. At the same time, Gather the electrical signal shown on the digital oscilloscope 5 and record the size of the electrical signal;
步骤三、以施加的电场为横坐标、归一化的透射光强度为纵坐标，图4为[001]取向的PMN-0.33PT弛豫铁电晶体在施加外电场激励下的透射光强度的归一化值，图中指向为右的箭头对应电场逐渐升高的曲线，指向为左的箭头对应电场逐渐降低的曲线。将电场升高过程中的纵坐标数据对横坐标数据求一阶导数并取绝对值，图5为[001]取向的PMN-0.33PT弛豫铁电晶体在施加外电场激励下的归一化的透射光强度对施加外电场一阶导数的绝对值。图5中的最高点对应的电场为180V/mm，对应图4中变化最剧烈的位置，此电场即为PMN-0.33PT铁电晶片的矫顽场Ec。Step 3: Taking the applied electric field as the abscissa and the normalized transmitted light intensity as the ordinate, Fig. 4 shows the transmission light intensity of the [001]-oriented PMN-0.33PT relaxor ferroelectric crystal under the excitation of an external electric field The normalized value, the arrow pointing to the right in the figure corresponds to the curve of the electric field gradually increasing, and the arrow pointing to the left corresponds to the curve of the electric field gradually decreasing. Calculate the first derivative of the ordinate data and the abscissa data in the process of electric field increase and take the absolute value. Figure 5 shows the normalization of the [001] oriented PMN-0.33PT relaxor ferroelectric crystal under the excitation of an external electric field The absolute value of the first derivative of the transmitted light intensity with respect to the applied electric field. The electric field corresponding to the highest point in Figure 5 is 180V/mm, which corresponds to the position with the most drastic change in Figure 4, and this electric field is the coercive field E c of the PMN-0.33PT ferroelectric chip.
该方法基于一种铁电晶体矫顽场的非接触式光学测量装置实现。The method is realized based on a non-contact optical measurement device for the coercive field of a ferroelectric crystal.
Claims (8)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910636469.7A CN110308337A (en) | 2019-07-15 | 2019-07-15 | A non-contact optical measurement device and method for the coercive field of a ferroelectric crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910636469.7A CN110308337A (en) | 2019-07-15 | 2019-07-15 | A non-contact optical measurement device and method for the coercive field of a ferroelectric crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110308337A true CN110308337A (en) | 2019-10-08 |
Family
ID=68081141
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910636469.7A Pending CN110308337A (en) | 2019-07-15 | 2019-07-15 | A non-contact optical measurement device and method for the coercive field of a ferroelectric crystal |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110308337A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113092824A (en) * | 2020-05-05 | 2021-07-09 | 台湾积体电路制造股份有限公司 | Method for detecting ferroelectric signals and piezoelectric force microscope device |
| CN113176455A (en) * | 2021-04-23 | 2021-07-27 | 西安交通大学 | Device and method for measuring piezoelectric performance parameters of ferroelectric crystal under strong electric field |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11108976A (en) * | 1997-10-08 | 1999-04-23 | Nikon Corp | Permittivity measuring apparatus |
| US20030102441A1 (en) * | 2001-11-30 | 2003-06-05 | Gil Rosenman | Tailoring domain engineered structures in ferroelectric materials |
| CN1629645A (en) * | 2003-12-19 | 2005-06-22 | 中国科学院声学研究所 | Method and system for measuring coercive field strength of ferroelectric |
| CN101158712A (en) * | 2007-09-17 | 2008-04-09 | 西安交通大学 | A measuring device and measuring method for a hysteresis loop of a ferroelectric material |
| CN105137125A (en) * | 2015-08-31 | 2015-12-09 | 电子科技大学 | Double-frequency multichannel synchronization detection method for electric domain imaging |
| CN105353088A (en) * | 2015-11-12 | 2016-02-24 | 湖北大学 | Electrically controlled light scattering material and device time-domain response characteristic testing method |
| CN108593563A (en) * | 2018-05-15 | 2018-09-28 | 中国科学院福建物质结构研究所 | Optical material test method and optic analytical instrument used |
| CN108982412A (en) * | 2018-08-08 | 2018-12-11 | 中国科学院福建物质结构研究所 | A kind of instrument for domain structure real-time detection during Crystal polarization |
| CN208384030U (en) * | 2018-07-30 | 2019-01-15 | 厦门大学 | A kind of voltage-drop loading and ferroelectric properties test macro suitable for in-situ test |
-
2019
- 2019-07-15 CN CN201910636469.7A patent/CN110308337A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11108976A (en) * | 1997-10-08 | 1999-04-23 | Nikon Corp | Permittivity measuring apparatus |
| US20030102441A1 (en) * | 2001-11-30 | 2003-06-05 | Gil Rosenman | Tailoring domain engineered structures in ferroelectric materials |
| CN1629645A (en) * | 2003-12-19 | 2005-06-22 | 中国科学院声学研究所 | Method and system for measuring coercive field strength of ferroelectric |
| CN101158712A (en) * | 2007-09-17 | 2008-04-09 | 西安交通大学 | A measuring device and measuring method for a hysteresis loop of a ferroelectric material |
| CN105137125A (en) * | 2015-08-31 | 2015-12-09 | 电子科技大学 | Double-frequency multichannel synchronization detection method for electric domain imaging |
| CN105353088A (en) * | 2015-11-12 | 2016-02-24 | 湖北大学 | Electrically controlled light scattering material and device time-domain response characteristic testing method |
| CN108593563A (en) * | 2018-05-15 | 2018-09-28 | 中国科学院福建物质结构研究所 | Optical material test method and optic analytical instrument used |
| CN208384030U (en) * | 2018-07-30 | 2019-01-15 | 厦门大学 | A kind of voltage-drop loading and ferroelectric properties test macro suitable for in-situ test |
| CN108982412A (en) * | 2018-08-08 | 2018-12-11 | 中国科学院福建物质结构研究所 | A kind of instrument for domain structure real-time detection during Crystal polarization |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113092824A (en) * | 2020-05-05 | 2021-07-09 | 台湾积体电路制造股份有限公司 | Method for detecting ferroelectric signals and piezoelectric force microscope device |
| CN113176455A (en) * | 2021-04-23 | 2021-07-27 | 西安交通大学 | Device and method for measuring piezoelectric performance parameters of ferroelectric crystal under strong electric field |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105784599B (en) | A kind of opto-acoustic imaging devices and its imaging method based on graphene | |
| US20060272418A1 (en) | Opto-acoustic methods and apparatus for perfoming high resolution acoustic imaging and other sample probing and modification operations | |
| Ruesing et al. | Second harmonic microscopy of poled x-cut thin film lithium niobate: Understanding the contrast mechanism | |
| Tam et al. | Precise measurements of a magnetostriction coefficient of a thin soft‐magnetic film deposited on a substrate | |
| CN110308337A (en) | A non-contact optical measurement device and method for the coercive field of a ferroelectric crystal | |
| CN110118756A (en) | Space charge test macro and method with nanometer resolution | |
| Batagiannis et al. | Piezo-and pyroelectric microscopy | |
| JPH0421139B2 (en) | ||
| CN107576632B (en) | Methods, systems and applications for non-destructive characterization of polarized crystal domain structures | |
| CN108593563A (en) | Optical material test method and optic analytical instrument used | |
| Amber et al. | Nonlinear optical interactions in focused beams and nanosized structures | |
| CN107144550A (en) | A kind of utilization optical second harmonic determines the system and method for ferroelectric thin film farmland orientation | |
| CN101609134B (en) | A method for voltage calibration of electro-optical detectors | |
| CN112710906B (en) | An optoelectronic space charge measurement platform and method with nanometer spatial resolution | |
| CN102540408A (en) | Hyper-hemispherical electro-optical solid immersion lens | |
| CN105353088B (en) | Automatically controlled light-scattering material and device time domain response characteristic test method | |
| CN113567400A (en) | Device capable of measuring second harmonic of substance under ultrahigh pressure condition and application thereof | |
| CN108387333A (en) | A kind of silicon thin film material stress detecting system | |
| CN111474421B (en) | Method for detecting periodic polarization crystal duty ratio based on piezoelectric effect | |
| FR2570199A1 (en) | ACOUSTIC MICROSCOPE FOR DEEP ANALYSIS OF AN OBJECT HAVING ASPHERICAL LENSES | |
| Korkh et al. | Scanning acoustic microscope for visualization of microflaws in solids | |
| CN109406454B (en) | An Improved Z Scanning Device | |
| JP2007503575A (en) | Non-invasive electric field detection and measurement device and method | |
| Zhang et al. | Receiving principles and experimental test of several commonly used methods for laser ultrasonic thickness measurement | |
| JP4699364B2 (en) | Device and method for non-invasive detection and measurement of media properties |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |