CN110299448A - A kind of the resistive formula random access memory and preparation method of blended metal oxide - Google Patents
A kind of the resistive formula random access memory and preparation method of blended metal oxide Download PDFInfo
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- CN110299448A CN110299448A CN201910559817.5A CN201910559817A CN110299448A CN 110299448 A CN110299448 A CN 110299448A CN 201910559817 A CN201910559817 A CN 201910559817A CN 110299448 A CN110299448 A CN 110299448A
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- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 28
- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 28
- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 239000010410 layer Substances 0.000 claims abstract description 136
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 229910052751 metal Inorganic materials 0.000 claims abstract description 19
- 239000002184 metal Substances 0.000 claims abstract description 19
- 239000000843 powder Substances 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 12
- 239000011241 protective layer Substances 0.000 claims abstract description 12
- 238000004140 cleaning Methods 0.000 claims abstract description 10
- 150000002739 metals Chemical class 0.000 claims abstract description 8
- 239000010408 film Substances 0.000 claims description 25
- 239000002243 precursor Substances 0.000 claims description 22
- 239000008367 deionised water Substances 0.000 claims description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 15
- 238000000576 coating method Methods 0.000 claims description 12
- 229910021641 deionized water Inorganic materials 0.000 claims description 12
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 9
- 238000000137 annealing Methods 0.000 claims description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- 238000004528 spin coating Methods 0.000 claims description 8
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 6
- 230000008020 evaporation Effects 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 6
- CHPZKNULDCNCBW-UHFFFAOYSA-N gallium nitrate Chemical compound [Ga+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CHPZKNULDCNCBW-UHFFFAOYSA-N 0.000 claims description 6
- 229910009112 xH2O Inorganic materials 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 5
- 230000032683 aging Effects 0.000 claims description 4
- 239000011247 coating layer Substances 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 238000005566 electron beam evaporation Methods 0.000 claims description 4
- 239000012528 membrane Substances 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 238000003756 stirring Methods 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229960000935 dehydrated alcohol Drugs 0.000 claims description 3
- YZZFBYAKINKKFM-UHFFFAOYSA-N dinitrooxyindiganyl nitrate;hydrate Chemical compound O.[In+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O YZZFBYAKINKKFM-UHFFFAOYSA-N 0.000 claims description 3
- 229940044658 gallium nitrate Drugs 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 230000010148 water-pollination Effects 0.000 claims description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims description 2
- 239000007772 electrode material Substances 0.000 claims description 2
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 229910003437 indium oxide Inorganic materials 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims description 2
- 239000002245 particle Substances 0.000 claims description 2
- 239000012255 powdered metal Substances 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims 1
- 239000002994 raw material Substances 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 238000009776 industrial production Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 150000002736 metal compounds Chemical class 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000004506 ultrasonic cleaning Methods 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002242 deionisation method Methods 0.000 description 1
- 229960004756 ethanol Drugs 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000006193 liquid solution Substances 0.000 description 1
- 150000002642 lithium compounds Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000011265 semifinished product Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Abstract
The invention discloses the resistive formula random access memory and preparation method of a kind of blended metal oxide, including the top electrode layer being from top to bottom arranged, resistive oxide layer and substrate；The top electrode layer includes the top electrode that several are arranged in resistive oxide layer；The resistive oxide layer is doping metals oxide layer；Preparation specific steps include: a) substrate cleaning；B) resistive oxide layer is prepared；C) top electrode layer is prepared；D) protective layer is prepared.Metal oxide layer and doping powder in this case are all made of the preparation of solwution method technique, it is more preferable to adulterate RRAM device resistive characteristic compared to the RRAM device of single or double layer pure metal oxide layer for the preparation for realizing low cost RRAM, and equipment and raw material investment are less, it can be achieved that large-scale industrial application.
Description
Technical field
The present invention relates to a kind of microelectronics technology, the RRAM of specifically a kind of metal oxide powder doping
(Resistive random access memory, resistive formula random access memory) and preparation method thereof.
Background technique
As the resistive formula random access memory (RRAM) of one of most potential nonvolatile memory, because of it
Excellent performance, which has received, more and more extensive to be focused on studying.Passed through using metal oxide as the RRAM of change resistance layer and is applied
Influence of the making alive to device realizes the erasable and electric current of data so that the memory for being changes back and forth between height configuration
The operation of the blocking in channel, low pressure, tell, low-power consumption the characteristics of make the great researching value of RRAM device.
Traditional variable resistance metal oxidation layer film can pass through sputtering, chemical vapor deposition (CVD), atomic layer deposition
The methods of (ALD) it realizes, but the above method is limited to equipment or environment and influences, it is low to be unable to satisfy high-volume for high production cost
The industrial production demand of cost.
Summary of the invention
Object of the present invention is to: the research for prior art RRAM is insufficient, provides one kind and is mixed based on metal oxide powder
Miscellaneous RRAM of metal oxide layer and preparation method thereof is able to satisfy the industrial production demand of high-volume low cost.
The technical scheme is that a kind of resistive formula random access memory of blended metal oxide, including by upper
To the top electrode layer of lower setting, resistive oxide layer and substrate；The top electrode layer includes that several are arranged in resistive oxide layer
Top electrode, the top electrode far from resistive oxide layer surface be equipped with protective layer；The resistive oxide layer is doping metals
Oxide layer；The substrate includes the bottom electrode layer on the upper layer being stacked and the insulating layer of lower layer.
Preferably, the protective layer is any one in metal aluminum film layer or tungsten film layer.
Preferably, the top electrode be cylindrical metal nickel film layer or titanium nitride thin film layer, with a thickness of 20 ~ 60nm, directly
Diameter is 0.1 ~ 0.4mm.
Preferably, the resistive oxide layer is to adulterate the indium oxide layer of gallium oxide powder, with a thickness of for 15 ~ 90nm.
Preferably, the bottom electrode layer is metal platinum (Pt) film layer or tin indium oxide (ITO) film layer, with a thickness of 50 ~
150nm。
Preferably, the insulating layer is using the three-decker being stacked, including be from top to bottom arranged ti thin film layer, two
Silicon oxide film layer, silicon membrane layer lamination or transparent glass layer laminate.
A kind of the resistive formula random access memory and preparation method of blended metal oxide, preparation specific steps include:
A) substrate is cleaned；
The substrate of purchase is completely immersed in the beaker for holding dehydrated alcohol, the beaker is put into deionized water environment and is carried out
It is cleaned by ultrasonic for the first time；After being cleaned by ultrasonic for the first time, substrate is completely immersed in the beaker for holding acetone, the beaker is placed in
It carries out being cleaned by ultrasonic for second in deionized water environment；After second is cleaned by ultrasonic, substrate is rinsed with deionized water and uses nitrogen
Drying；
B) resistive oxide layer is prepared；
Indium nitrate hydrate is taken, the In of 0.13 ~ 0.21mol/L is configured to deionized water2O3Precursor solution；Take gallium nitrate water
It closes object and is dissolved in the Ga for being configured to 0.2 ~ 0.5mol/L in deionized water2O3Precursor solution；By configured Ga2O3Presoma is molten
Liquid, which is stood, carries out aging, and time of repose is no more than 1 day；By the Ga after aging2O3Precursor solution is annealed, and the time is no more than
For 24 hours, Ga is obtained after annealing2O3Powder；By Ga2O3Powder and In2O3The ratio that precursor solution carries out 1:4 ~ 6.5 is doped
To doping Ga2O3The In of powder2O3Precursor solution, by solution left standstill 3-5 hours；The solution of standing is added dropwise in bottom electrode layer
On, spin coating is carried out, spin-coating time is no more than 60s, and revolving speed is 3500 ~ 5000rpm；After spin coating, it is solidifying be annealed to solution
Gu film forming, the In after doping is made2O3Film layer, annealing temperature are 150 ~ 350 DEG C, and annealing time is no more than 1.5h；
C) top electrode layer is prepared；
Particle or powdered upper electrode material are coated in resistive oxide layer by evaporation coating method, form top electrode layer；
D) protective layer is prepared；
Graininess or powdered metal coating layer material are coated on each layer top electrode layer far from resistive by evaporation coating method
On the surface of oxide layer, the resistive formula random access memory of blended metal oxide is made.
Preferably, clear to substrate progress surface plasma again under vacuum environment after being cleaned by ultrasonic in step a)
It washes, to enhance the hydrophily of bottom electrode layer, improves the filming performance of resistive oxide layer；The surface plasma cleaning process time
It need to continue at least 35min, complete the interior progress resistive oxide layer preparation of 10min after surface plasma cleaning.
Preferably, in step b), the In2O3Precursor solution and Ga2O3Precursor solution is under 20 DEG C of -30 DEG C of environment
It is configured, is at the uniform velocity stirred to clarify, 5 ~ 10min need to be stood after stirring under room temperature environment, wherein InN3O9.xH2O is molten
The purity of matter is 99.99%.
Preferably, granular top electrode layer material or metal coating layer material are placed in crucible by the evaporation coating method
In, the mask plate that aperture is 0.1 ~ 0.4mm is covered in resistive oxide layer or in top electrode layer, electron beam evaporation deposition is put into
Coating operation is evaporated in machine.
The invention has the advantages that
1) using pure solwution method prepare resistive oxide layer, it is simple to operate, realize low cost RRAM preparation, equipment and and
Raw material invests the less preparation that can be used for large area RRAM device, realizes large-scale industrial application；
2) RRAM device of single layer or lamination pure metal oxide layer is made compared to traditional handicraft, resistive effect is more preferable, for setting
Voltage required for position (SET) and reset (RESET) process is smaller, and absolute value makes device less than 2 V, doping metals oxide layer
The tolerance and stability of part also increase；
3) it uses elemental metals or elemental metals compound-material as top electrode, is powered on instead of traditional oxide material
Pole further reduces costs and optimizes preparation process.
Detailed description of the invention
The invention will be further described with reference to the accompanying drawings and embodiments:
Fig. 1 is a kind of structural schematic diagram of the resistive formula random access memory of blended metal oxide；
Fig. 2 is a kind of resistive characteristic of the resistive formula random access memory of blended metal oxide within the scope of 200 ~ 300 DEG C
Variation diagram；
In figure: 100, protective layer；101, top electrode layer；200, resistive oxide layer；300, bottom electrode layer；400, ti thin film layer；
401, silica membrane layer；402, silicon membrane layer.
Specific embodiment
Embodiment:
As shown in attached drawing 1-2, a kind of resistive formula random access memory of blended metal oxide, including what is be from top to bottom arranged
Top electrode layer, resistive oxide layer 200 and substrate；The top electrode layer includes the top that several are arranged in resistive oxide layer 200
Electrode layer 101, the top electrode layer are equipped with protective layer 100 on the surface far from resistive oxide layer 200；The resistive oxide layer
200 be doping metals oxide layer；The substrate includes the bottom electrode layer 300 on the upper layer of setting and the insulating layer of lower layer；It is described exhausted
Edge layer using the three-decker that is stacked, including be from top to bottom arranged titanium (Ti) film layer, silica (SiO2) film
Layer and silicon (Si) film layer；The bottom electrode layer is metal platinum (Pt) film layer, with a thickness of 100nm；The protective layer 100 is gold
Belong to aluminium (Al) film layer；Top electrode 101 is cylindrical metal compound nickel (Ni) film layer in the top electrode layer, with a thickness of
40nm, diameter 0.1mm；The resistive oxide layer 200 is doping Ga2O3The In of powder2O3Film layer.
A kind of the resistive formula random access memory and preparation method of blended metal oxide, preparation specific steps include:
A) substrate is cleaned；
Substrate is completely immersed in the beaker for holding dehydrated alcohol, the beaker is placed in deionized water environment and is carried out for the first time
10min ultrasonic cleaning；
After being cleaned by ultrasonic for the first time, substrate is rinsed with deionized water and removes remaining ethanol impurity, is later completely immersed in substrate
It holds in the beaker of acetone, the beaker is placed in deionized water environment and carries out second of 10min ultrasonic cleaning；
After second is cleaned by ultrasonic, substrate is rinsed with deionized water and with being dried with nitrogen；
The above-mentioned substrate for being cleaned by ultrasonic and being dried is put into the vacuum chamber of surface plasma cleaning machine, surface etc. is carried out
Ion Cleaning is to enhance the hydrophily of bottom electrode layer 300；The surface plasma cleaning process time continues 20min；
B) resistive oxide layer is prepared；
Under the conditions of room temperature (preferably 25 DEG C), indium nitrate hydrate (InN is taken3O9.xH2O), In is configured to deionized water2O3Before
Drive liquid solution；Take 0.9g, the InN that purity is 99.99%3O9.xH2O is placed in a beaker, and 20ml deionization is added into beaker
Water is configured to the In of 0.15 mol/L2O3Precursor solution；At the uniform velocity stirring to solution is clarified, and stands 30min later；
(under the conditions of (preferably 25 DEG C), gallium nitrate hydrate (Ga (NO is taken in room temperature3)3.xH2O it) is dissolved in deionized water and being configured to
Ga2O3Precursor solution；Take 2.21g, the Ga (NO that purity is 99.99%3)3.xH2O is placed in a beaker, and is added into beaker
20ml deionized water is configured to the Ga of 0.3 mol/L2O3Precursor solution；By configured Ga2O3Precursor solution stand into
Row aging, time of repose are 16 h；
The complete Ga of aging will be stood2O3Precursor solution is annealed, and annealing temperature is 250 DEG C, and annealing time is 20 h,
Ga is obtained after annealing2O3Powder；
By Ga2O3Powder and In2O3Precursor solution is doped according to the ratio of 1:5.2；
After completing surface plasma cleaning in 10min, the In finished will be adulterated2O3Precursor solution by 0.45 μm of aperture,
Spin coating 45s, revolving speed 3500rpm on bottom electrode layer 300 is added dropwise in the syringe of PES material filter tip；After spin coating, it is placed in
Anneal 1h, In in 250 DEG C of heating plate2O3Resistive oxide layer is made in precursor solution freezing film on bottom electrode layer 300
200；
C) top electrode layer is prepared；
Particulate lithium compound material Ni is placed in the crucible of electron beam evaporation deposition machine, is covering for 0.1mm by aperture
Diaphragm plate is covered in resistive oxide layer 200, and mask plate is lowered on the suction disc in coating machine cavity, is closed cavity and is evaporated
Metal compound material Ni is coated in resistive oxide layer 200 by coating operation, forms the semi-finished product with top electrode 101；
D) protective layer is prepared；
After top electrode 101 completes, granulated metallic material Al is placed in the crucible of electron beam evaporation deposition machine, by hole
Diameter is that the mask plate of 0.1mm is covered on top electrode 101, and mask plate is lowered on the suction disc in coating machine cavity, closes chamber
Body carries out double evaporation-cooling coating operation, is coated with to form metal Al protective layer 100 on top electrode 101.
The resistive effect for being illustrated in figure 2 the present embodiment RRAM device answers test result, using 0 point of abscissa as line of demarcation, just
Axis be SET (set) process, negative axis be RESET (reset) process, voltage bias absolute value all in 2V hereinafter, and resistive effect answer
It is held in a certain range, the gradual change phenomenon of certain probability occurs during RESET, doping metals oxide layer makes device
Tolerance and stability also increase.
The basic principles, main features and advantages of the present invention have been shown and described above.The technology of the industry
Personnel only illustrate the present invention it should be appreciated that the present invention is not limited by examples detailed above described in examples detailed above and specification
Principle, various changes and improvements may be made to the invention without departing from the spirit and scope of the present invention, these variation and
Improvement all fall within the protetion scope of the claimed invention.The claimed scope of the invention is by appended claims and its is equal
Object defines.
Claims (10)
1. a kind of resistive formula random access memory of blended metal oxide, it is characterised in that: including what is be from top to bottom arranged
Top electrode layer, resistive oxide layer and substrate；
The top electrode layer includes the top electrode that several are arranged in resistive oxide layer, and the top electrode is aoxidized far from resistive
The surface of layer is equipped with protective layer；The resistive oxide layer is doping metals oxide layer；The substrate includes the upper layer being stacked
Bottom electrode layer and lower layer insulating layer.
2. a kind of resistive formula random access memory of blended metal oxide according to claim 1, it is characterised in that:
The protective layer is any one in metal aluminum film layer or tungsten film layer.
3. a kind of resistive formula random access memory of blended metal oxide according to claim 1, it is characterised in that:
The top electrode is cylindrical metal nickel film layer or titanium nitride thin film layer, with a thickness of 20 ~ 60nm.
4. a kind of resistive formula random access memory of blended metal oxide according to claim 1, it is characterised in that:
The resistive oxide layer is to adulterate the indium oxide layer of gallium oxide powder.
5. a kind of resistive formula random access memory of blended metal oxide according to claim 1, it is characterised in that:
The bottom electrode layer is metal platinum film layer or indium tin oxide films layer, with a thickness of 50 ~ 150nm.
6. a kind of resistive formula random access memory of blended metal oxide according to claim 1, it is characterised in that:
The insulating layer is using the three-decker being stacked, including ti thin film layer, the silica membrane layer, silicon being from top to bottom arranged
Film layer laminate or transparent glass layer laminate.
7. a kind of preparation method of the resistive formula random access memory of blended metal oxide, it is characterised in that: preparation is specific
Step includes:
A) substrate is cleaned；
The substrate of purchase is completely immersed in the beaker for holding dehydrated alcohol, the beaker is put into deionized water environment and is carried out
It is cleaned by ultrasonic for the first time；After being cleaned by ultrasonic for the first time, substrate is completely immersed in the beaker for holding acetone, the beaker is placed in
It carries out being cleaned by ultrasonic for second in deionized water environment；After second is cleaned by ultrasonic, substrate is rinsed with deionized water and uses nitrogen
Drying；
B) resistive oxide layer is prepared；
Indium nitrate hydrate is taken, the In of 0.13 ~ 0.21mol/L is configured to deionized water2O3Precursor solution；Take gallium nitrate water
It closes object and is dissolved in the Ga for being configured to 0.2 ~ 0.5mol/L in deionized water2O3Precursor solution；By configured Ga2O3Presoma is molten
Liquid, which is stood, carries out aging, and time of repose is no more than 1 day；By the Ga after aging2O3Precursor solution is annealed, and the time is no more than
For 24 hours, Ga is obtained after annealing2O3Powder；By Ga2O3Powder and In2O3The ratio that precursor solution carries out 1:4 ~ 6.5 is doped
To doping Ga2O3The In of powder2O3Precursor solution, by solution left standstill 3-5 hours；The solution of standing is added dropwise in bottom electrode layer
On, spin coating is carried out, spin-coating time is no more than 60s, and revolving speed is 3500 ~ 5000rpm；After spin coating, it is solidifying be annealed to solution
Gu film forming, the In after doping is made2O3Film layer, annealing temperature are 150 ~ 350 DEG C, and annealing time is no more than 1.5h；
C) top electrode layer is prepared；
Particle or powdered upper electrode material are coated in resistive oxide layer by evaporation coating method, form top electrode layer；
D) protective layer is prepared；
Graininess or powdered metal coating layer material are coated on each layer top electrode layer far from resistive by evaporation coating method
On the surface of oxide layer, the resistive formula random access memory of blended metal oxide is made.
8. a kind of preparation method of the resistive formula random access memory of blended metal oxide according to claim 7,
It is characterized by: surface plasma cleaning is carried out to substrate again under vacuum environment after being cleaned by ultrasonic in step a), with
Enhance the hydrophily of bottom electrode layer, improves the filming performance of resistive oxide layer；The surface plasma cleaning process time need to hold
Continuous at least 35min completes the interior progress resistive oxide layer preparation of 10min after surface plasma cleaning.
9. a kind of preparation method of the resistive formula random access memory of blended metal oxide according to claim 7,
It is characterized by: in step b), the In2O3Precursor solution and Ga2O3Precursor solution carries out under 20 DEG C of -30 DEG C of environment
Configuration, at the uniform velocity stirs to clarify, need to stand 5 ~ 10min after stirring under room temperature environment, wherein InN3O9.xH2O solute
Purity is 99.99%.
10. a kind of preparation method of the resistive formula random access memory of blended metal oxide according to claim 7,
It is characterized by: granular top electrode layer material or metal coating layer material are placed in crucible by the evaporation coating method,
The mask plate that aperture is 0.1 ~ 0.4mm is covered in resistive oxide layer or in top electrode layer, electron beam evaporation deposition machine is put into
In be evaporated coating operation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910559817.5A CN110299448A (en) | 2019-06-26 | 2019-06-26 | A kind of the resistive formula random access memory and preparation method of blended metal oxide |
Applications Claiming Priority (1)
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