CN110299446A - Automatically controlled magneton valve arrangement based on acoustic bulk wave excitation - Google Patents
Automatically controlled magneton valve arrangement based on acoustic bulk wave excitation Download PDFInfo
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- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
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Abstract
The invention belongs to memory areas, a kind of automatically controlled magneton valve arrangement based on acoustic bulk wave excitation is disclosed, including film bulk acoustic wave resonator minor structure, magneton valve minor structure and the exchange biased hetero-junctions minor structure of ferroelectricity being located on substrate (1) from top to bottom；Film bulk acoustic wave resonator minor structure is used to provide acoustic bulk wave excitation to magneton valve minor structure；Regulate and control the resonance frequency and amplitude of generated acoustic bulk wave using film bulk acoustic wave resonator minor structure, ferromagnetic resonance is realized to excite the size of magneton stream in magneton valve minor structure, to realize the conducting and cut-off of the magneton valve minor structure, the excitation to its magneton valve effect of the magneton valve minor structure is realized.The present invention passes through the energisation mode to magneton valve key, other minor structures etc. of corresponding matching setting improve, enable the structure to adjust resonance frequency by FBAR and amplitude realizes that ferromagnetic resonance to excite magneton stream size in magneton valve, realizes cut-offfing for device, reaches the function of storage.
Description
Technical field
The invention belongs to memory area, more particularly, to a kind of automatically controlled magneton valve arrangement based on acoustic bulk wave excitation,
The device be integrally using acoustic bulk wave as spin-wave excitation in a manner of automatically controlled magneton valve antetype device structure, using acoustic bulk wave hang down
Directly propagate in device film direction with transmission path is short, loss is low, working frequency is high and is easier to and the excellent of wave resonance that spin
Gesture is a kind of novel memory device structures, is particularly suitable for applying under room temperature.
Background technique
Since half a century, the transistor technology of electric field regulation conductivity semiconductor is developed rapidly, and is verified
The Moore's Law that nineteen sixty-five proposes.Currently, CMOS integrated technique has evolved to 5nm hereinafter, not change transistor technology basic
Mode only develops from physical size, and Moore's Law will be hard to carry on.It calculates and deposits with low-power consumption for after satisfaction moles of epoch high speed
Store up Technical Development Requirement, people have made a large amount of effort to seek new technology, including based on electron spin, electron tunnel,
Ferroelectricity, strain and the microelectric technique of phase transformation have more small unit size, non-volatile, low-power consumption and height so that exploitation is next-generation
Microelectronic component [Dmitri E.Nikonov, the Ian A.Young.Benchmarking of Beyond-CMOS of speed
Exploratory Devices for Logic Integrated Circuits.IEEE Journal on Exploratory
Solid-State Computational Devices and Circuits.16July2015]。
Further to solve the high device power consumption and heating problem that spin electric device becomes increasingly conspicuous because size reduces, people
Sight has been turned to spin wave device [Zhang Steven S.-L, Zhang Shufeng.Magnon Mediated
Electric Current Drag Across a Ferromagnetic Insulator Layer.10.1103/
PhysRevLett.109.096603.2012], magnetic insulator/nonmagnetic metal/magnetism insulator (MI/ was proposed in 2018
NM/MI magneton valve arrangement).Giant magnetoresistance effect (GMR) and tunnel magneto effect are utilized it is characterized in that using and being similar to
(TMR) spin valve structure, but avoid electron-transport, the opposite magnetization direction by changing two layers magnetic insulating layer take
Always regulate and control the size of magneton stream.Spin Valve based on GMR and TMR effect reflects switch state by resistance value, and based on certainly
The magneton valve of rotation wave is mainly detected by inverse logic gates.The above-mentioned class Spin Valve based on spin wave is named as magneton
Valve, researcher by using it is magnetic it is nonmetallic as pole material and insulation barrier to avoid the interference of electronic behavior, thus
Observe spin wave effect.The Joule heat that magneton valve can generate to avoid electron-transport, has the potentiality for reducing power consumption.Moscow
Physics and technical research institute Sergei Nikitov et al. point out have 99% all to waste in energy consumed by current storage system
In " heat dissipation " [A.Klimov, N.Tiercelin, Y.Dusch, S.Giordano, T.Mathurin, P.Pernod,
V.Preobrazhensky,A.Churbanov,S.Nikitov.Magnetoelectric write and read
operations in a stress-mediated multiferroic memory cell.Applied Physics
Letters 110(22):222401.May 2017].Meanwhile spin wave has two characteristics of amplitude and phase, is expected to break through biography
The logic and computing architecture for von Neumann system of uniting become one of rear mole of epoch information transmission and important way of processing.
Chinese invention patent CN 107293641A proposes a kind of by preparing the heterogeneous of Co nano dot and BiFeO3 film
Knot, strengthens the coupling effect of ferroelectricity and ferromagnetic interface, to strain the regulatory mechanism read as autotelegraph magnetic, improves what autotelegraph magnetic was read
Controllability.But it has only accomplished control of the electric field to part magnetic moment, be not carried out observed by macroscopical hysteresis loop it is whole
Body magnetism reversible control.
Chinese invention patent CN 104362250B proposes a kind of electroluminescent resistive hetero-junctions with exchange bias effect,
It only realizes automatically controlled exchange biased heterojunction structure, and not formed antetype device (is not only by exchange bias effect
Device can be formed well, reaches the performance of device, therefore the prior art has done exchange biased research but not to it into one
Step research forms antetype device), therefore electric field is unable to respond to the whole control of device effect.And it is inclined to be based only on exchange
The variation for setting resistance resistance state caused by effect is limited to, and is easily lost applied to storage aspect information.
So far, most of more iron heterojunction structures are only able to achieve regulation of the electric field to magnetic moment size, to magnetic moment direction
The regulation auxiliary for needing magnetic field and mostly automatically controlled plinth more be it is volatile, there is no electric field may be implemented in the case where no magnetic field assists
The technology of magnetic moments rotations and magnetic resistance change rate in non-volatile regulation spintronics devices.And Chinese invention patent CN
109103329A proposes a kind of automatically controlled spin valve structure and non-volatile memory device.It is to realize electric field based on spin valve structure
The variation for regulating and controlling magnetic moments rotations and magnetic resistance in device, realizes automatically controlled magnetic storage function, if substituting Spin Valve with magneton valve, according to
Electronically written so may be implemented, device power consumption can be further decreased.As novel magneton valve device, in material, physics and device
On breakthrough would be possible to become low energy consumption, rewritable, non-volatile and high-frequency novel computer series core devices.
Currently, magneton self-spining device has just emerged, magneton valve arrangement be also just suggested [Wu H, Huang L, Fang C,
et al.Magnon Valve effect between two magnetic insulators.Phys Rev Lett,2018,
120:097205].The magneton valve device proposed at present is the mode of excitation based on temperature gradient, the shadow vulnerable to environment temperature
Ring, to apply it in large scale integrated circuit, be badly in need of spin wave excitation, regulation that development matches with magneton valve arrangement with
Detection means and the corresponding magneton spin antetype device of development.
Summary of the invention
Aiming at the above defects or improvement requirements of the prior art, the purpose of the present invention is to provide one kind is swashed based on acoustic bulk wave
The automatically controlled magneton valve arrangement encouraged, wherein other minor structures of corresponding matching setting are (such as by the energisation mode to magneton valve key
The exchange biased hetero-junctions minor structure of film bulk acoustic wave resonator minor structure, ferroelectricity) etc. improve, which is passed through
FBAR adjusts resonance frequency and amplitude realizes that ferromagnetic resonance to excite magneton stream size in magneton valve, is realized cut-offfing for device, reached
To the function of storage.The automatically controlled magneton valve arrangement based on acoustic bulk wave excitation, is particularly suitable for applying under room temperature, and existing
It needs to realize the automatically controlled magneton valve arrangement that automatically controlled magneton valve function is different, in the present invention using gradient temperature in technology, is based on sound
Bulk wave excitation utilizes the resonance frequency and amplitude of acoustic bulk wave, matches with voltage control, can effectively realize automatically controlled magneton valve function
Energy.Also, since by the way of acoustic bulk wave excitation, device has the excellent spy of smaller, easy of integration, high-frequency and low-power consumption
Point.
To achieve the above object, according to one aspect of the present invention, a kind of automatically controlled magnetic based on acoustic bulk wave excitation is provided
Sub- valve arrangement, which is characterized in that including the film bulk acoustic wave resonator minor structure from top to bottom on substrate (1), magneton valve
Minor structure and the exchange biased hetero-junctions minor structure of ferroelectricity, wherein
The film bulk acoustic wave resonator minor structure is used to provide acoustic bulk wave excitation, the film to the magneton valve minor structure
Acoustic bulk wave resonator minor structure includes piezoelectric membrane (7) and is located at the piezoelectric membrane (7) both ends and is used for the piezoelectricity
Film (7) applies alive electrode layer (8), which can generate under the action of applying voltage
Acoustic bulk wave, and the resonance frequency and amplitude of the acoustic bulk wave can be regulated and controled by applying alive difference；
The magneton valve minor structure is specially the magneton valve minor structure of magnetic insulator/nonmagnetic metal/magnetism insulator, packet
Include the magnetic insulating layer (4) of first be distributed from bottom to top, nonmagnetic metal layer (5) and the second magnetic insulating layer (6)；
The resonance frequency and amplitude for being regulated and controled generated acoustic bulk wave using the film bulk acoustic wave resonator minor structure, are realized
Ferromagnetic resonance is to excite the size of magneton stream in the magneton valve minor structure, to realize the conducting of the magneton valve minor structure and cut
Only, the excitation to the magneton valve minor structure difference magneton stream size is realized；
The exchange biased hetero-junctions minor structure of ferroelectricity and the magneton valve minor structure share the described second magnetic insulating layer
(6), the exchange biased hetero-junctions minor structure of the ferroelectricity further includes more iron layer (3) and the bottom being located at below more iron layer (3) electricity
Pole (2), more iron layer (3) and the second magnetic insulating layer (6) constitute hetero-junctions, the exchange biased heterogeneous knot knot of the ferroelectricity
Structure has the function that electric field regulates and controls described second magnetic insulating layer (6) magnetic moment by the exchange bias effect of hetero-junctions, is matched
The relative orientation for closing both the magnetic insulating layer (4) of regulation described first and the second magnetic insulating layer (6) magnetic moment realizes magneton valve
Conducting and cut-off.
It is another aspect of this invention to provide that providing a kind of automatically controlled magneton valve arrangement based on acoustic bulk wave excitation, feature
It is, including the film bulk acoustic wave resonator minor structure, magneton valve minor structure and ferroelectricity exchange being located on substrate (1) from top to bottom
Bias hetero-junctions minor structure, wherein
The film bulk acoustic wave resonator minor structure is used to provide acoustic bulk wave excitation, the film to the magneton valve minor structure
Acoustic bulk wave resonator minor structure includes piezoelectric membrane (7) and is located at the piezoelectric membrane (7) both ends and is used for the piezoelectricity
Film (7) applies alive electrode layer (8), which can generate under the action of applying voltage
Acoustic bulk wave, and the resonance frequency and amplitude of the acoustic bulk wave can be regulated and controled by applying alive difference；
The magneton valve minor structure is specially the magneton valve minor structure of magnetic insulator/nonmagnetic metal/magnetism insulator, packet
Include the magnetic insulating layer (4) of first be distributed from bottom to top, antiferromagnetic insulating layer and the second magnetic insulating layer (6)；
The resonance frequency and amplitude for being regulated and controled generated acoustic bulk wave using the film bulk acoustic wave resonator minor structure, are realized
Ferromagnetic resonance is to excite the size of magneton stream in the magneton valve minor structure, to realize the conducting of the magneton valve minor structure and cut
Only, the excitation to the magneton valve minor structure difference magneton stream size is realized；
The exchange biased hetero-junctions minor structure of ferroelectricity and the magneton valve minor structure share the described second magnetic insulating layer
(6), the exchange biased hetero-junctions minor structure of the ferroelectricity further includes more iron layer (3) and the bottom being located at below more iron layer (3) electricity
Pole (2), more iron layer (3) and the second magnetic insulating layer (6) constitute hetero-junctions, the exchange biased heterogeneous knot knot of the ferroelectricity
Structure has the function that electric field regulates and controls described second magnetic insulating layer (6) magnetic moment by the exchange bias effect of hetero-junctions, is matched
The relative orientation for closing both the magnetic insulating layer (4) of regulation described first and the second magnetic insulating layer (6) magnetic moment realizes magneton valve
Conducting and cut-off.
As present invention further optimization, in the exchange biased hetero-junctions minor structure of ferroelectricity, more iron layer (3) tools
Body is BiFeO3More iron layer, the BiFeO for one layer of Ti or the Nb doping being preferably used cooperatively3Layer and one layer it is rare earth doped
BiFeO3Layer.
As present invention further optimization, in the exchange biased hetero-junctions minor structure of ferroelectricity, more iron layer (3) with
Lattice mismatch rate between the hearth electrode (2) is less than 10%.
As present invention further optimization, the hearth electrode (2) is SrRuO3。
As present invention further optimization, in the film bulk acoustic wave resonator minor structure, the piezoelectric membrane (7) is
AIN piezoelectric membrane；
The electrode layer (8) is upper layer and lower layer, is located at the upper and lower surfaces of the piezoelectric membrane (7)；This is thin
Film acoustic bulk wave resonator minor structure can generate the direction of propagation perpendicular to the acoustic bulk wave of the piezoelectric membrane (7).
As present invention further optimization, in the magneton valve minor structure, the first magnetic insulating layer (4) and described
Second magnetic insulating layer (6) is Y3Fe5O12Layer；
The nonmagnetic metal layer (5) be metal simple-substance layer or metal oxide layer containing nonmagnetic metal, specially Au or
Pt or MgO.
As present invention further optimization, the described first magnetic insulating layer (4) and the second magnetic insulating layer (6) are equal
For Y3Fe5O12Layer；
The antiferromagnetic insulating layer is NiO.
As present invention further optimization, the substrate (1) is ferro-electricity single crystal, preferably SrTiO3Monocrystalline.
Contemplated above technical scheme through the invention, compared with prior art, on the one hand in principle: due to spin
Wave is the exciplex of Spin precession process in magnetic systems, and quantized quasi particle is known as magneton, each magneton is taken
Spin angular momentaum with a planck constant；Compared with electronics is conducted in the spin polarization in conventional metals, based on spin wave
Magneton has the advantage that the transmitting of 1. magnetons has the characteristics that no heat dissipation and low resistance, in the spin information of long range
There is significant advantage in propagation；2. the fluctuation property of magneton has been provided simultaneously with two characteristics of amplitude and phase, biography can break through
The logic and computing architecture of the von Neumann system of system, it is possible to the important side as rear mole of epoch information transmission and processing
One of formula.On the other hand, upper in specific implementation: the present invention generates spin wave using the acoustic bulk wave excitation based on FBAR structure and realizes
Magneton valve effect, this automatically controlled energisation mode were not only influenced effectively but also by environment temperature, such magneton based on pure spin current
Transistor (magneton valve) can than conventional electronics and circuit faster, it is more efficient.Novel magneton valve arrangement, electricity are based in the present invention
How ferromagnetic heterojunction structure and film bulk acoustic wave resonator structure are controlled, a kind of automatically controlled magneton valve knot of acoustic bulk wave excitation has been obtained
Structure, not will receive temperature (under the conditions of such as 20 DEG C~40 DEG C of temperature) in the normal temperature range influences (this is because acoustic bulk wave
Generate not vulnerable to the influence of environment temperature, therefore in the case where excitation is not easy affected by environment, the overall operation of device
Substantially it is unaffected), it can especially apply at room temperature.The structure is applied to for the first time based on MI/NM/MI (or MI/AFI/
MI magneton valve effect structure), and the sandwich structure motivated based on acoustic bulk wave, i.e. film bulk acoustic are set on magneton valve arrangement
Wave resonator (FBAR) adjusts resonance frequency and amplitude with this configuration, with setting in MI/NM/MI (or MI/AFI/MI) magneton
More iron layer cooperation below valve arrangement generates ferromagnetic resonance effect to realize the high efficiency excitation to magneton stream in magneton valve, finally
Realize the antetype device of non-volatile, higher frequency, more low power consumption memories structure.
The automatically controlled magneton different using the gradient temperature automatically controlled magneton valve function of realization, in the present invention from needing in the prior art
Valve arrangement utilizes the resonance frequency and amplitude of acoustic bulk wave based on acoustic bulk wave excitation, matches, can effectively realize with voltage control
Automatically controlled magneton valve function.FBAR structure is a kind of harmonic technology for being based on bulk acoustic wave (BAW), it is using when a DC electric field adds
The inverse piezoelectric effect of piezoelectric membrane when the both ends of material converts the electrical signal to sound wave, so that it is ferromagnetic total to form resonance generation
Effect of shaking excites magneton stream with high efficiency.
By taking MI/NM/MI magneton valve arrangement as an example, the present invention passes through two layers of iron in finely regulating MI/NM/MI magneton valve arrangement
The crystal structure of magnetic non-metallic layer, to generate different coercivitys, to realize antiparallel opposite magnetization orientation；Parallel and
Relatively large and lesser magneton stream can be externally exported under antiparallel configuration respectively, i.e., is taken by two layers of the opposite of ferromagnetic insulating layer
Store function is reached to realize on-off action by the magneton stream size of the magneton valve to control.Particularly, the present invention utilizes
Acoustic bulk wave excitation lower layer in MI/NM layer magnetic moment change (due to acoustic bulk wave motivate, the spin wave of generation run through MI1 with
MI2, but due to propagation loss, so the incentive degree to two layers is different, and since the acoustic bulk wave direction of propagation is phase
With, therefore be to two layers of MI incentive action effect it is the same, only effect degree is different), regulating and controlling voltage MI/BFO is more
Iron layer exchange bias effect reaches magnetic moment variation, and (having one layer in magneton valve in three-decker MI/NM/MI is formed in conjunction with BFO
Heterojunction structure, this layer MI layers of magnetic moment can reach electric field regulation MI layer film magnetic moment by the exchange bias effect of hetero-junctions
The effect in size and direction), it can thus regulate and control the relative orientation of two layers of magnetic moment and then realize magneton valve effect, i.e. magneton stream
Size (magneton stream is small to mean that magneton valve is closed, otherwise conducting).
The present invention verifies and is utilized the exchange bias effect of multi-iron material, and multi-iron material had not only had ferroelectricity but also had iron
Exchange bias effect between magnetism, with magnetosphere becomes apparent from, more easy-regulating.The it is proposed of exchange bias effect is based on ferromagnetic
Not only had various single iron (such as ferroelectricity, ferromagnetism) with the effect at antiferromagnetic interface using multi-iron material, and
By the compound synergistic effect of the coupling of iron, by magnetic field coordination electrode or the excellent of electric field controls magnetic polarization can be passed through
Performance, it can more preferably realize exchange bias effect using multi-iron material ferromagnetism, more preferably realized using multi-iron material ferroelectricity
Electric control function.The effect of exchange bias effect heterojunction structure is exactly to reach electric field regulation by the exchange bias effect of hetero-junctions
The effect of MI layer film magnetic moment, to realize that the relative orientation of upper layer and lower layer magnetic moment realizes magneton valve on-off.
Present invention preferably employs BiFeO3(BFO) more iron layer are used as, BFO for having ferroelectricity and anti-simultaneously at room temperature
The order of two kinds of structures of ferromagnetism is that at room temperature while having the materials of both controllable properties in multi-ferroic material.
Since its property can produce electromagnetic coupling effect, i.e., internal magnetic moment can change as applied voltage changes and be applied to store
Aspect, the automatically controlled magneton valve arrangement that the present invention is motivated by being cooperated FBAR that can realize based on acoustic bulk wave, utilizes FBAR knot
Structure adjustment resonance frequency, amplitude and more iron layer generate ferromagnetic resonance effect to realize that the high efficiency to magneton stream in magneton valve swashs
Hair.More iron layer can be further divided into two layers, use different multi-iron materials to realize reduction device creepage and fix with magnetism
Layer constitutes more iron/ferromagnetism hetero-junctions functional layers, plays main pinning function and electric control function, realizes the electrically controllable property of device.This
Invention is preferably using the BiFeO for one layer of Ti or the Nb doping being used cooperatively3Buffer layer and one layer of rare earth doped BiFeO3Electricity
Control layer；And Ti volume appropriate can make BFO crystallite dimension smaller and smaller, also be conducive to BFO epitaxial growth on electrode layer, that is, grow
Film quality it is preferable.
As it can be seen that the automatically controlled magneton valve arrangement based on acoustic bulk wave excitation in the present invention, magneton valve arrangement --- magnetic insulator/
Metal/magnetism insulator (MI/NM/MI), by the automatically controlled magneton stream size for adjusting magneton valve to realize on-off action, Jin Ershi
Existing store function.By the magnetic moment of two layers of finely regulating magnetic non-metallic layer in magneton valve arrangement, that is, pass through two layers of finely regulating
The crystal structure of magnetic non-metallic layer generates different coercivitys, to realize antiparallel opposite magnetization orientation；Using sound
The mode of bulk wave excitation is combined with magneton valve, ferromagnetic nonmetallic using acoustic bulk wave harmonic frequency as the spin wave excitation of carrier
Magneton stream in layer, and then switch store function is realized by adjusting magneton stream size.The room temperature electricity based on acoustic bulk wave excitation
Magneton valve arrangement is controlled, adjustment resonance frequency is adjusted by FBAR and realizes ferromagnetic resonance to excite magneton stream in magneton valve big with amplitude
It is small, it realizes cut-offfing for device, reaches the function of storage；Simultaneously as using acoustic bulk wave excitation by the way of, device have it is smaller,
The excellent characteristics of easy of integration, high-frequency and low-power consumption.
Based on the framework and embodiment of antetype device whole in the present invention, automatically controlled magnetic is motivated based on acoustic bulk wave in the present invention
A kind of magneton type core cell device of the sub- valve antetype device as spin information transmitting and logical operation, compares legacy memory
Part has the characteristics that more low energy consumption, rewritable, non-volatile and high-frequency.The magneton valve arrangement can be with existing extensive collection
It is matched at circuit technology, facilitates the comprehensive collection of the following magneton device, spin electric device and semiconductor microelectronics
It is utilized at extensive.
Detailed description of the invention
Fig. 1 is to motivate the automatically controlled magneton valve device layers separate structure schematic diagram of room temperature based on acoustic bulk wave in the present invention.
Fig. 2 is FBAR typical structure schematic diagram of the present invention.
Fig. 3 is the structural schematic diagram of novel magneton valve module of the present invention.
Fig. 4 is acoustic bulk wave excitation magneton valve effect schematic diagram of the present invention.
Fig. 5 is that the present invention is based on the magneton valves of spin-wave excitation in the Hall voltage shape that spins in parallel with antiparallel state subinverse
State.
Fig. 6 be the present invention is based on the magneton valve of spin-wave excitation its against logic gates voltage and magnetic field dependence figure.
The meaning of each appended drawing reference is as follows in figure: 1 is substrate, and 2 be hearth electrode, and 3 be more iron layer, and 4 be the first magnetic insulation
Layer, 5 be nonmagnetic metal layer, and 6 be the second magnetic insulating layer, and 7 be piezoelectric membrane, and 8 be electrode；1. being film bulk acoustic wave resonator knot
2. structure is magneton valve arrangement, be 3. the exchange biased heterojunction structure of ferroelectricity.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.As long as in addition, technical characteristic involved in the various embodiments of the present invention described below
Not constituting a conflict with each other can be combined with each other.
As shown in Figure 1, the automatically controlled magneton valve arrangement of room temperature based on acoustic bulk wave excitation in the present invention, main includes three son knots
Structure, that is, film bulk acoustic wave resonator structure 1., magneton valve arrangement 2. and the exchange biased heterojunction structure of ferroelectricity 3.；Wherein,
1. film bulk acoustic wave resonator structure includes piezoelectric membrane 7, and be located on about 7 two end faces of the piezoelectric membrane
Electrode layer 8 (since electrode layer 8 corresponds to two electrodes up and down, 1. which will produce
The acoustic bulk wave of the raw direction of propagation from top to down or from bottom to top, the acoustic bulk wave direction of propagation are perpendicular to film, i.e., shake with film
Direction is parallel)；
2. magneton valve arrangement includes that the first magnetic insulating layer 4, the nonmagnetic metal layer 5, second that are distributed from top to bottom are magnetic absolutely
Edge layer 6；The magnetic insulating layer 6 of the second of top layer in addition to directly with film bulk acoustic wave resonator structure 1. in electrode layer 8 connect
Touching is outer, and top is also separately provided with electrode layer 8, as the input electrode of magneton valve arrangement 2., can apply voltage to device
To regulate and control the exchange bias effect of MI/BFO.
3. the exchange biased heterojunction structure of ferroelectricity includes the more iron layer 3 being distributed from top to bottom and hearth electrode 2.
Film bulk acoustic wave resonator structure 1., magneton valve arrangement 2., the exchange biased heterojunction structure of ferroelectricity 3. can be from upper
And it is located at superposition down and is distributed on substrate 1.
Substrate 1 preferably uses ferro-electricity single crystal.
In view of the preparation of more iron thin films, the preferred SrTiO of substrate3As substrate.In view of more iron layer films and hearth electrode
The lattice of layer, the bottom electrode layer is preferably SrRuO3.The depositions of bottom electrode layer on ferro-electricity single crystal substrate, and control electricity
Between pole layer and more iron layer lattice match (lattice mismatch between electrode layer and the more iron layer of polycrystalline preferably less than 0.1,
I.e. preferably smaller than 10%), and the area of the bottom electrode layer is consistent with substrate, primarily as delaying for electrode layer and the more iron layer in upper layer
Rush layer.
More iron layer are prepared, on bottom electrode layer in order to reduce the leakage current of device and realize the electrically controllable property of device, more iron
Layer is preferably constituted using two parts, for example, one layer of BFO for using Ti to adulterate is as buffer layer, another layer of BFO using La doping
As electric controlled layer.Because Bi is readily volatilized and the fluctuation of the valence state of Fe ion can lead to big leakage current in BFO, and then seriously affect it
The electric properties such as ferroelectricity, dielectric.Therefore in order to reduce the leakage current of device and realize the electrically controllable property of device, more iron layer use two
Divide and constitute, one layer of BFO for using Ti to adulterate is as buffer layer, and another layer of BFO for using La to adulterate is as electric controlled layer.
The BFO of Ti doping is that B doping are carried out to BFO.High-valence cationic is selected to substitute part B Fe ion, such as Ti4+,
Nb5+Plasma portion substitutes Fe3+(it is of course also possible to use other high-valence cationics replace, but Ti or Nb mixes ion at present
Miscellaneous effect is best).High-valence cationic doping can reduce Lacking oxygen, to change Fe2+The concentration of ion (reduces Lacking oxygen Fe3+
Ion less can be oxidized to Fe2+Ion), therefore leakage current can be effectively reduced, increase resistance, the electric hysteresis being saturated returns
Line.And with the increase of Ti volume (within 10%, i.e. BiFe1-xTixO3The value of middle x controls within 10%), the crystal of BFO
Structure gradually changes to rectangle, and crystallite dimension is smaller and smaller, and ferroelectricity-para-electric phase transition temperature (Tc) gradually decreases.Mix BFO material after Ti
The leakage current of material reduces, and remanent polarization increases.As it can be seen that after Ti doping, the microscopic appearance of BFO film, leakage current, residual polarization
All improved with fatigability.
Bi element is easier to volatilize during the preparation process, and the product finally obtained may be unsatisfactory for the stoichiometry of anticipation
Than, and present invention introduces La, the rare earth elements such as Nd can inhibit the volatilization of Bi, reduce electric leakage improving tool ferromagnetism and ferroelectricity
Play the role of in terms of stream and dielectric loss very big.And the addition of rare earth element can improve the ferroelectricity of BFO phase and ferromagnetic simultaneously
Performance is conducive to regulation interfacial effect.
On the other hand, magneton valve upper layer and lower layer magnetism insulating layer preferably uses that ferromagnetic resonance line width is narrow, resistivity is high, high frequency
Small ferrimagnetic films Y is lost3Fe5O12(YIG), it can be achieved that the higher on-off ratio of magneton valve device.
Since the magneton-electron spin for depending mainly on the size of magnetic insulator/metal interface of magneton valve ratio turns
Change efficiency, in order to improve magneton valve ratio, reach higher on-off ratio, intermediate nonmagnetic metal conductor preferably use Au or Pt or
The non-magnetic conductor such as MgO.Each structure in magneton valve portion other than component can be adjusted according to actual requirement, each layer of structure
Thickness can also correspond to regulation, to obtain preferable magneton valve effect；For example, the specific structure of magneton valve portion can be YIG
(20nm)-Au (15nm)/Pt (10nm)/MgO (10nm)-YIG (40nm) can obtain obvious magneton valve effect, pass through
Each film thickness of accuracy controlling magneton valve, can achieve better magneton valve effect, and other magnetic non-metallic layers and non-magnetic gold
Belong to layer, then the setting of other thickness can be used.
The present invention preferably uses that dielectric constant is larger, temperature coefficient is small, thermal conductivity is fabulous, chemical stability is good, longitudinal
The fireballing AlN piezoelectric membrane of channel transfer participates in building FBAR acoustic bulk wave resonator, it can be achieved that FBAR sound as piezoelectric membrane
The good quality factor of body wave resonator, resonance frequency and smaller volume.
Embodiment 1:
The embodiment can use the preparation method of following steps:
In monocrystalline SrTiO3(001) one layer of SrRuO is prepared using pulse laser deposition (PLD) on substrate3As hearth electrode.
The BFO of one layer of Ti doping is prepared using PLD on hearth electrode as buffer layer, the specific doping concentration of Ti doping is
It can be for 5% (that is, BiFe1-xTixO3Middle x=0.05)；Certainly, doping can also be adjusted suitably, and the BFO for adulterating the Ti is slow
It is minimum to rush layer leakage current.
Electric controlled layer of the BFO film of one layer of La of regrowth doping as device, the specific doping concentration of La doping can be
5% (that is, Bi1-xLaxFeO3Middle x=0.05), according to experimental result, the remanent polarization Pr value of material is larger at this time, can
Make ferroelectric that can there is more effective pyroelectric effect or piezoelectric effect after artificial polarization.
One layer of ferromagnetic thin film is prepared using PLD/ magnetron sputtering mode in BFO film surface and forms MI/BFO hetero-junctions.
Continue to prepare nonmagnetic intermediate layer on ferromagnetic thin film using magnetron sputtering mode and magnetic insulating layer forms MI/
The magneton valve arrangement of NM/MI.
One layer of Pt nano thin-film is prepared as the bottom of electrode layer and FBAR electricity using magnetron sputtering method on magneton valve arrangement
Pole.
One layer of AlN piezoelectric membrane is prepared on hearth electrode with reactive sputtering mode.
One layer of Pt nano thin-film is prepared as top electrode using magnetron sputtering mode on piezoelectric membrane and forms FBAR structure.
With optical graving for the electrode pattern of entire device.
Electrode is finally prepared by the way of electron beam evaporation, forms prototype memory device.
FBAR is a kind of harmonic technology for being based on bulk acoustic wave (BAW), it is will be electric using the inverse piezoelectric effect of piezoelectric membrane
Energy (signal) is converted into sound wave, to form resonance.As shown in Fig. 2, when a DC electric field is added on the both ends of material, material
Deformation can change with the size of electric field, and when this electric field it is contrary when, the deformation direction of material also changes correspondingly
To form vibration, such vibration can motivate the bulk acoustic wave propagated along film thickness direction, this sound wave reaches upper/lower electrode
It is reflected with air interface, and then the roundtrip inside film, concussion is formed, to reach the excitation based on bulk acoustic wave
Mode, it is this to vibrate in the body cavity for betiding piezoelectric material relative to SAW resonator (SAW), therefore can bear bigger
Power, and this be also FBAR technology be better than SAW a reason.For example, when there is AC field addition, the deformation of material
Direction can with electric field just and negative half-cycle make contraction or expansion interaction change.Using the electrode layer at piezoelectric membrane both ends,
Apply different voltages, the regulation of acoustic bulk wave resonance frequency and amplitude can be realized.
The structure of magneton valve portion is as shown in figure 3, the voltage by top electrodes Pt layers of measurement and total magnetic by top layer
Galvanization is directly proportional to observe magneton valve effect effect.
The progress and magnetic force drageffect for the Seebeck effect that spins demonstrate the magnetoelectricity stream in ferromagnetic insulator can be with
It is generated by thermal gradient or electron spin injection.
The explanation (such as Fig. 4) of magnet valve effect: the magnetoelectricity stream (MI layers) when spin-wave excitation, in top magnetic non-metallic layer
From two sources.It is generated one is acoustic bulk wave excitation, another kind is the magnetic injected from (MI layers) of bottom magnetic non-metallic layer
Electric current.If MI layers of the direction of magnetization is parallel up and down, the two magnetoelectricity streams are to be added, and inverse spin Hall voltage is in
High level state；If MI layers of the direction of magnetization is antiparallel up and down, the two magnetoelectricity streams subtract each other, and inverse spin is suddenly
Your voltage is in low level state.Therefore, magneton valve just can by the opposite magnetization orientation of two layers of magnetic non-metallic layer of control come
Magneton stream size is controlled, realizes cut-offfing for device.
Magneton valve based on spin-wave excitation is under two layers of magnetic non-metallic layer difference magnetized state (parallel/antiparallel)
Inverse spin Hall voltage level state is as shown in Figure 5.Inverse logic gates voltage depends on two layers of magnetism known to Fig. 5, Fig. 6
The relative orientation of the insulating layer intensity of magnetization.
In conclusion the embodiment can be formed it is comprehensive with FBAR and magneton valve, using acoustic bulk wave as the electricity of energisation mode
Magneton valve arrangement is controlled, the memorizer prototype device with the high efficiency low power consumption of practical application value is formed.Suddenly by inverse spin
Your effect is realized as the switching function of detection means sensitive detection parts to be stored.
Other than using the specific material of magneton valve portion specific in above-described embodiment, other MI/NM/MI can also be used
Magneton valve arrangement, such as other MI/NM/MI magneton valve arrangements well known in the prior art.In existing structure magneton valve effect compared with
For significantly there are also MI/AFI/MI three-decker (wherein, AFI represent antiferromagnetic insulating layer), such as YIG/NiO/YIG structure, sheet
Invention is also suitable.
As it will be easily appreciated by one skilled in the art that the foregoing is merely illustrative of the preferred embodiments of the present invention, not to
The limitation present invention, any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should all include
Within protection scope of the present invention.
Claims (9)
1. a kind of automatically controlled magneton valve arrangement based on acoustic bulk wave excitation, which is characterized in that including being located on substrate (1) from top to bottom
Film bulk acoustic wave resonator minor structure, magneton valve minor structure and the exchange biased hetero-junctions minor structure of ferroelectricity, wherein
The film bulk acoustic wave resonator minor structure is used to provide acoustic bulk wave excitation, the film bulk acoustic to the magneton valve minor structure
Wave resonator minor structure includes piezoelectric membrane (7) and is located at the piezoelectric membrane (7) both ends and is used for the piezoelectric membrane
(7) alive electrode layer (8) are applied, the film bulk acoustic wave resonator minor structure can under the action of applying voltage generation sound body
Wave, and the resonance frequency and amplitude of the acoustic bulk wave can be regulated and controled by applying alive difference；
The magneton valve minor structure is specially the magneton valve minor structure of magnetic insulator/nonmagnetic metal/magnetism insulator, including from
The magnetic insulating layer (4) of the first of lower and upper distribution, nonmagnetic metal layer (5) and the second magnetic insulating layer (6)；
The resonance frequency and amplitude for being regulated and controled generated acoustic bulk wave using the film bulk acoustic wave resonator minor structure, are realized ferromagnetic
Resonance is to excite the size of magneton stream in the magneton valve minor structure, thus realize the conducting and cut-off of the magneton valve minor structure,
Realize the excitation to the magneton valve minor structure difference magneton stream size；
The exchange biased hetero-junctions minor structure of ferroelectricity and the magneton valve minor structure share the described second magnetic insulating layer (6),
The exchange biased hetero-junctions minor structure of ferroelectricity further includes more iron layer (3) and the hearth electrode below more iron layer (3)
(2), more iron layer (3) and the second magnetic insulating layer (6) constitute hetero-junctions, the exchange biased hetero-junctions minor structure of the ferroelectricity
Have the function that electric field regulates and controls described second magnetic insulating layer (6) magnetic moment by the exchange bias effect of hetero-junctions, is cooperated
The relative orientation for regulating and controlling both the described first magnetic insulating layer (4) and the second magnetic insulating layer (6) magnetic moment realizes magneton valve
Conducting and cut-off.
2. a kind of automatically controlled magneton valve arrangement based on acoustic bulk wave excitation, which is characterized in that including being located on substrate (1) from top to bottom
Film bulk acoustic wave resonator minor structure, magneton valve minor structure and the exchange biased hetero-junctions minor structure of ferroelectricity, wherein
The film bulk acoustic wave resonator minor structure is used to provide acoustic bulk wave excitation, the film bulk acoustic to the magneton valve minor structure
Wave resonator minor structure includes piezoelectric membrane (7) and is located at the piezoelectric membrane (7) both ends and is used for the piezoelectric membrane
(7) alive electrode layer (8) are applied, the film bulk acoustic wave resonator minor structure can under the action of applying voltage generation sound body
Wave, and the resonance frequency and amplitude of the acoustic bulk wave can be regulated and controled by applying alive difference；
The magneton valve minor structure is specially the magneton valve minor structure of magnetic insulator/nonmagnetic metal/magnetism insulator, including from
The magnetic insulating layer (4) of the first of lower and upper distribution, antiferromagnetic insulating layer and the second magnetic insulating layer (6)；
The resonance frequency and amplitude for being regulated and controled generated acoustic bulk wave using the film bulk acoustic wave resonator minor structure, are realized ferromagnetic
Resonance is to excite the size of magneton stream in the magneton valve minor structure, thus realize the conducting and cut-off of the magneton valve minor structure,
Realize the excitation to the magneton valve minor structure difference magneton stream size；
The exchange biased hetero-junctions minor structure of ferroelectricity and the magneton valve minor structure share the described second magnetic insulating layer (6),
The exchange biased hetero-junctions minor structure of ferroelectricity further includes more iron layer (3) and the hearth electrode below more iron layer (3)
(2), more iron layer (3) and the second magnetic insulating layer (6) constitute hetero-junctions, the exchange biased hetero-junctions minor structure of the ferroelectricity
Have the function that electric field regulates and controls described second magnetic insulating layer (6) magnetic moment by the exchange bias effect of hetero-junctions, is cooperated
The relative orientation for regulating and controlling both the described first magnetic insulating layer (4) and the second magnetic insulating layer (6) magnetic moment realizes magneton valve
Conducting and cut-off.
3. the automatically controlled magneton valve arrangement as claimed in claim 1 or 2 based on acoustic bulk wave excitation, which is characterized in that the ferroelectricity is handed over
It changes in biasing hetero-junctions minor structure, more iron layer (3) are specially BiFeO3More iron layer, one layer of Ti being preferably used cooperatively or
The BiFeO of Nb doping3Layer and one layer of rare earth doped BiFeO3Layer.
4. the automatically controlled magneton valve arrangement as claimed in claim 1 or 2 based on acoustic bulk wave excitation, which is characterized in that the ferroelectricity is handed over
It changes in biasing hetero-junctions minor structure, the lattice mismatch rate between more iron layer (3) and the hearth electrode (2) is less than 10%.
5. the automatically controlled magneton valve arrangement as claimed in claim 3 based on acoustic bulk wave excitation, which is characterized in that the hearth electrode (2)
For SrRuO3。
6. the automatically controlled magneton valve arrangement as claimed in claim 1 or 2 based on acoustic bulk wave excitation, which is characterized in that the film sound
In body wave resonator minor structure, the piezoelectric membrane (7) is AIN piezoelectric membrane；
The electrode layer (8) is upper layer and lower layer, is located at the upper and lower surfaces of the piezoelectric membrane (7)；The film sound
Body wave resonator minor structure can generate the direction of propagation perpendicular to the acoustic bulk wave of the piezoelectric membrane (7).
7. the automatically controlled magneton valve arrangement as described in claim 1 based on acoustic bulk wave excitation, which is characterized in that the magneton valve knot
In structure, the described first magnetic insulating layer (4) and the second magnetic insulating layer (6) are Y3Fe5O12Layer；
The nonmagnetic metal layer (5) is metal simple-substance layer or metal oxide layer containing nonmagnetic metal, specially Au or Pt or
MgO。
8. the automatically controlled magneton valve arrangement as claimed in claim 2 based on acoustic bulk wave excitation, which is characterized in that the magneton valve knot
In structure, the described first magnetic insulating layer (4) and the second magnetic insulating layer (6) are Y3Fe5O12Layer；
The antiferromagnetic insulating layer is NiO.
9. the automatically controlled magneton valve arrangement as claimed in claim 1 or 2 based on acoustic bulk wave excitation, which is characterized in that the substrate (1)
For ferro-electricity single crystal, preferably SrTiO3Monocrystalline.
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| CN113497181A (en) * | 2020-03-19 | 2021-10-12 | 中国科学院物理研究所 | Magneton magnetoresistance device with two-dimensional material as spacer layer and electronic equipment comprising same |
| CN113497181B (en) * | 2020-03-19 | 2024-05-10 | 中国科学院物理研究所 | Magneton magnetic resistance device with two-dimensional material being spacer layer and electronic equipment comprising magneton magnetic resistance device |
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| CN1687729A (en) * | 2005-06-09 | 2005-10-26 | 上海交通大学 | Method for manufacturing force-sensing parts based on micro electromechanical system |
| CN101599340A (en) * | 2009-04-08 | 2009-12-09 | 南京航空航天大学 | Direct magnetic coupling preparation method of magneto strictive multiplayer film |
| US20100224912A1 (en) * | 2008-11-10 | 2010-09-09 | Varshni Singh | Chromium doped diamond-like carbon |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1687729A (en) * | 2005-06-09 | 2005-10-26 | 上海交通大学 | Method for manufacturing force-sensing parts based on micro electromechanical system |
| US20100224912A1 (en) * | 2008-11-10 | 2010-09-09 | Varshni Singh | Chromium doped diamond-like carbon |
| CN101599340A (en) * | 2009-04-08 | 2009-12-09 | 南京航空航天大学 | Direct magnetic coupling preparation method of magneto strictive multiplayer film |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113497181A (en) * | 2020-03-19 | 2021-10-12 | 中国科学院物理研究所 | Magneton magnetoresistance device with two-dimensional material as spacer layer and electronic equipment comprising same |
| CN113497181B (en) * | 2020-03-19 | 2024-05-10 | 中国科学院物理研究所 | Magneton magnetic resistance device with two-dimensional material being spacer layer and electronic equipment comprising magneton magnetic resistance device |
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