CN110299425A - A kind of photovoltaic back of rapid cooling - Google Patents
A kind of photovoltaic back of rapid cooling Download PDFInfo
- Publication number
- CN110299425A CN110299425A CN201910559411.7A CN201910559411A CN110299425A CN 110299425 A CN110299425 A CN 110299425A CN 201910559411 A CN201910559411 A CN 201910559411A CN 110299425 A CN110299425 A CN 110299425A
- Authority
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- China
- Prior art keywords
- heat
- radiating
- rapid cooling
- radiating substrate
- barrier layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001816 cooling Methods 0.000 title claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 51
- 239000000463 material Substances 0.000 claims abstract description 45
- 230000004888 barrier function Effects 0.000 claims abstract description 26
- 239000011253 protective coating Substances 0.000 claims abstract description 15
- 239000010410 layer Substances 0.000 claims description 38
- 239000011248 coating agent Substances 0.000 claims description 20
- 238000000576 coating method Methods 0.000 claims description 20
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 11
- 230000017525 heat dissipation Effects 0.000 claims description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 10
- 239000002245 particle Substances 0.000 claims description 9
- 239000003365 glass fiber Substances 0.000 claims description 6
- 239000012528 membrane Substances 0.000 claims description 6
- 239000003973 paint Substances 0.000 claims description 6
- 239000000843 powder Substances 0.000 claims description 6
- 239000002041 carbon nanotube Substances 0.000 claims description 5
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 5
- 229910021389 graphene Inorganic materials 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
- 239000000654 additive Substances 0.000 claims description 4
- 230000000996 additive effect Effects 0.000 claims description 4
- 239000012790 adhesive layer Substances 0.000 claims description 4
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 3
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 3
- 229920000840 ethylene tetrafluoroethylene copolymer Polymers 0.000 claims description 2
- 229920009441 perflouroethylene propylene Polymers 0.000 claims description 2
- 229920011301 perfluoro alkoxyl alkane Polymers 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052710 silicon Inorganic materials 0.000 abstract description 7
- 239000010703 silicon Substances 0.000 abstract description 7
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 230000000694 effects Effects 0.000 description 5
- 230000032683 aging Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 210000003850 cellular structure Anatomy 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000009423 ventilation Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/049—Protective back sheets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/052—Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a kind of photovoltaic backs of rapid cooling, the photovoltaic back of the rapid cooling includes: EVA adhesion layer, barrier layer, heat-radiating substrate and protective coating, the EVA adhesion layer is fitted in barrier layer side, the other side of barrier layer is attached on heat-radiating substrate, the material of the heat-radiating substrate is thermally conductive PET material, the outside of the heat-radiating substrate is radiating surface, and the radiating surface is corrugated surface or fold face, and the radiating surface of the heat-radiating substrate coats protective coating.Through the above way, the present invention can be improved the thermal conductivity of backboard material, to improve the speed that the heat of silicon wafer generation is spread into ambient enviroment, significantly reduce the operating temperature of photovoltaic panel, the temperature gradient between in silicon wafer and ambient enviroment is effectively reduced, improves the incident photon-to-electron conversion efficiency of photovoltaic panel.
Description
Technical field
The present invention relates to photovoltaic module fields, more particularly to a kind of photovoltaic back of rapid cooling.
Background technique
Solar energy has been developed rapidly since the new century as a kind of environmentally protective clean energy resource, but as too
The incident photon-to-electron conversion efficiency of the key link that sun can utilize, crystal silicon solar plate is no more than 20%, and a large amount of energy is in photoelectric conversion
It is red in the process to be dissipated with form of thermal energy, therefore surface temperature will be significantly greater than environment temperature when photovoltaic panel work, with photovoltaic
On the one hand the rising of panel temperature can accelerate the aging of photovoltaic module, on the other hand, can reduce the photoelectric conversion effect of photovoltaic module
Rate needs to radiate in time, is to improve radiating rate by increasing heat dissipation area in existing some technologies, but due to light
The material problem of backboard itself is lied prostrate, heat dissipation area is only increased and is unable to reach predeterminated target.
Summary of the invention
The invention mainly solves the technical problem of providing a kind of rapid cooling backboards, can be improved the heat dissipation of photovoltaic back
Efficiency.
In order to solve the above technical problems, one technical scheme adopted by the invention is that: a kind of photovoltaic of rapid cooling is provided
Backboard, the photovoltaic back of the rapid cooling include: EVA adhesion layer, barrier layer, heat-radiating substrate and protective coating, and the EVA is viscous
Attached layer is fitted in barrier layer side, and the other side of barrier layer is attached on heat-radiating substrate, and the outside of the heat-radiating substrate is heat dissipation
Face, the radiating surface are corrugated surface or fold face, and the radiating surface of the heat-radiating substrate coats protective coating, the heat-radiating substrate
Material be PET material, nanoscale conduction powder is filled in the PET material.
In a preferred embodiment of the present invention, alumina in Nano level is added in the EVA material in the EVA adhesive layer
Grain, the additive amount are 3 ~ 5%.
In a preferred embodiment of the present invention, reflecting surface is additionally provided between the barrier layer and heat-radiating substrate, it is described
Reflecting surface is the metallic paint reflecting coating coated in heat-radiating substrate surface.
In a preferred embodiment of the present invention, the material of the barrier layer is tack membrane material, is PE film, OPP film
Or one of PEP film.
In a preferred embodiment of the present invention, 10 ~ 25% nano-alumina powder and 5 is filled in the PET material
~ 10% glass fibre, the filling total amount are no more than 30%.
In a preferred embodiment of the present invention, the area of the radiating surface of the heat-radiating substrate is not less than the 3 of substrate area
Times.
In a preferred embodiment of the present invention, the protective coating of the radiating surface coating of the heat-radiating substrate is polytetrafluoro
One of coating PTFE, FEP, PFA, ETFE.
In a preferred embodiment of the present invention, contain one in graphene or carbon nanotube in the protection shield coating
Kind or two kinds, content be 10 ~ 15%.
The beneficial effects of the present invention are: the present invention is adjusted by the material to photovoltaic back, backboard material is improved
Thermal conductivity, thus the speed that the heat for improving silicon wafer generation is spread into ambient enviroment, hence it is evident that reduce the work of photovoltaic panel
Temperature is effectively reduced the temperature gradient between in silicon wafer and ambient enviroment, improves the incident photon-to-electron conversion efficiency of photovoltaic panel.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of a preferred embodiment of the present invention；
The components in the drawings are labeled as follows:
1.EVA adhesion layer, 2. barrier layers, 3. heat-radiating substrates, 4. reflectings surface, 5. protective coatings.
Specific embodiment
The preferred embodiments of the present invention will be described in detail with reference to the accompanying drawing, so that advantages and features of the invention energy
It is easier to be readily appreciated by one skilled in the art, so as to make a clearer definition of the protection scope of the present invention.
Attached drawing is please referred to, the embodiment of the present invention includes:
A kind of photovoltaic back of rapid cooling, the photovoltaic back of the rapid cooling include: EVA adhesion layer 1, barrier layer 2, heat dissipation
Substrate 3 and protective coating 5, the EVA adhesion layer are fitted in barrier layer side, and the other side of barrier layer is attached to heat-radiating substrate 3
On, the outside of the heat-radiating substrate 3 is radiating surface, and the radiating surface is corrugated surface or fold face, the heat-radiating substrate 3
Radiating surface coats protective coating 5, and the material of the heat-radiating substrate 3 is PET material, leads in the PET material filled with nanoscale
Hot powder.
Nano-scale aluminum oxide particle is added in EVA material in the EVA adhesive layer 1, the additive amount is 5%, described
The reason of nano-scale aluminum oxide particle is added in EVA adhesion layer 1 is that alumina particle has good heat-conducting effect, can be effective
By silicon wafer generate heat imported into EVA adhesion layer 1 then by EVA adhesion layer 1 pass through barrier layer heat loss through conduction base
On plate 3, simultaneous oxidation alumina particles cannot be added too much, otherwise will affect the transparency of EVA, lead to the reflecting surface 4 of heat-radiating substrate
Effect reduces.
Reflecting surface 4 is additionally provided between the barrier layer 2 and heat-radiating substrate 3, the reflecting surface 4 is coated in heat-radiating substrate
The reflecting coating on 3 surfaces, the reflecting coating are aluminium paint reflecting coating, and the purpose using metallic paint is on the one hand can to reflect
On the other hand extra light does not influence heat transfer efficiency.
The material of the barrier layer 2 is tack PE membrane material, and adhesiveness is relatively good, and the tack PE membrane material passes through
Pressing mode, which is compounded on heat-radiating substrate 3, to prevent photovoltaic cell component from contacting with the external world.
The material of the heat-radiating substrate 3 is PET material, includes 10% alumina in Nano level filling in the PET material
Material and 10% glass fibre filler material, the purpose using alumina in Nano level is to improve the heat-conductive characteristic of plate, improves heat dissipation
Efficiency is to improve the physical strength and ageing-resistant performance of plate, but loading is excessive using the purpose that glass fibre is filled
Words can cause plate impact strength decreased, and brittleness increases.
The area product of the outside radiating surface of the heat-radiating substrate 3 is not less than 3 times of substrate area, by corrugations or
The area of the radiating surface of fold morphology can effectively improve the conduct heat away speed in the unit time, be conducive to quickly reduce battery
Temperature.
The outer guard coating 5 of the heat-radiating substrate 3 is PFA type polytetrafluoro coating, and the coating of mentioned kind has good
Good worst hot case, the effective weatherability for improving plate surface.
Contain graphene in the protective coating 5, content 15% is graphene common using the reason of graphene
Cross-ventilation heat dissipation except heat can be dissipated away by infra-red radiation mode and significantly improve radiating rate.
In another embodiment,
A kind of photovoltaic back of rapid cooling, the photovoltaic back of the rapid cooling include: EVA adhesion layer 1, barrier layer 2, heat dissipation
Substrate 3 and protective coating 5, the EVA adhesion layer are fitted in barrier layer side, and the other side of barrier layer is attached to heat-radiating substrate 3
On, the outside of the heat-radiating substrate 3 is radiating surface, and the radiating surface is corrugated surface or fold face, 3 outside of heat-radiating substrate
Protective coating 5 is coated, the material of the heat-radiating substrate 3 is PET material, is filled with nanoscale conduction powder in the PET material.
Nano-scale aluminum oxide particle is added in EVA material in the EVA adhesive layer 1, the additive amount is 3%, described
The reason of nano-scale aluminum oxide particle is added in EVA adhesion layer 1 is that alumina particle has good heat-conducting effect, can be effective
By silicon wafer generate heat imported into EVA adhesion layer 1 then by EVA adhesion layer 1 pass through barrier layer heat loss through conduction base
On plate 3, simultaneous oxidation alumina particles cannot be added too much, otherwise will affect the transparency of EVA, lead to the reflecting surface 4 of heat-radiating substrate
Effect reduces.
Reflecting surface 4 is additionally provided between the barrier layer 2 and heat-radiating substrate 3, the reflecting surface 4 is coated in heat-radiating substrate
The reflecting coating on 3 surfaces, the reflecting coating are aluminium paint reflecting coating, and the purpose using metallic paint is on the one hand can to reflect
On the other hand extra light does not influence heat transfer efficiency.
The material of the barrier layer 2 is tack OPP membrane material, and adhesiveness is relatively good, and the membrane material passes through compacting side
Formula, which is compounded on heat-radiating substrate 36, to prevent photovoltaic cell component from contacting with the external world.
The material of the heat-radiating substrate 3 is PET material, includes 25% alumina in Nano level filling in the PET material
Material and 5% glass fibre filler material, the purpose using alumina in Nano level is to improve the heat-conductive characteristic of plate, improves heat dissipation
Efficiency is to improve the physical strength and ageing-resistant performance of plate, but loading is excessive using the purpose that glass fibre is filled
Words can cause plate impact strength decreased, and brittleness increases.
The area product of the outside radiating surface of the heat-radiating substrate 3 is not less than 3 times of substrate area, by corrugations or
The area of the radiating surface of fold morphology can effectively improve the conduct heat away speed in the unit time, be conducive to quickly reduce battery
Temperature.
The outer guard coating 5 of the heat-radiating substrate 3 is PTFE type polytetrafluoro coating, and the coating of mentioned kind has good
Good worst hot case, the effective weatherability for improving plate surface.
Containing content of carbon nanotubes in the protective coating 5 is 10%, is that carbon nanotube exists using the reason of carbon nanotube
Heat can be dissipated away except common cross-ventilation heat dissipation by infra-red radiation mode and significantly improve radiating rate.
The above description is only an embodiment of the present invention, is not intended to limit the scope of the invention, all to utilize this hair
Equivalent structure or equivalent flow shift made by bright specification and accompanying drawing content is applied directly or indirectly in other relevant skills
Art field, is included within the scope of the present invention.
Claims (8)
1. a kind of photovoltaic back of rapid cooling, which is characterized in that the photovoltaic back of the rapid cooling include: EVA adhesion layer,
Barrier layer, heat-radiating substrate and protective coating, the EVA adhesion layer are fitted in barrier layer side, and the other side of barrier layer is attached to
On heat-radiating substrate, the outside of the heat-radiating substrate is radiating surface, and the radiating surface is corrugated surface or fold face, the heat dissipation base
The radiating surface of plate coats protective coating, and the material of the heat-radiating substrate is PET material, is filled with nanoscale in the PET material
Conduction powder.
2. the photovoltaic back of rapid cooling according to claim 1, which is characterized in that the EVA material in the EVA adhesive layer
Nano-scale aluminum oxide particle is added in material, the additive amount is 3 ~ 5%.
3. the photovoltaic back of rapid cooling according to claim 1, which is characterized in that the barrier layer and heat-radiating substrate it
Between be additionally provided with reflecting surface, the reflecting surface is the metallic paint reflecting coating coated in heat-radiating substrate surface.
4. the photovoltaic back of rapid cooling according to claim 1, which is characterized in that the material of the barrier layer is self-adhesion
Property membrane material, be one of PE film, OPP film or PEP film.
5. the photovoltaic back of rapid cooling according to claim 1, which is characterized in that in the PET material fill 10 ~
25% nano-alumina powder and 5 ~ 10% glass fibre, the filling total amount be no more than 30%.
6. the photovoltaic back of rapid cooling according to claim 1, which is characterized in that the radiating surface of the heat-radiating substrate
Area is not less than 3 times of substrate area.
7. the photovoltaic back of rapid cooling according to claim 1, which is characterized in that the radiating surface of the heat-radiating substrate
The protective coating of coating is one of polytetrafluoro coating PTFE, FEP, PFA, ETFE.
8. the photovoltaic back of rapid cooling according to claim 1, it is characterised in that contained in the protection shield coating
One of graphene or carbon nanotube or two kinds, content are 10 ~ 15%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910559411.7A CN110299425A (en) | 2019-06-26 | 2019-06-26 | A kind of photovoltaic back of rapid cooling |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910559411.7A CN110299425A (en) | 2019-06-26 | 2019-06-26 | A kind of photovoltaic back of rapid cooling |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110299425A true CN110299425A (en) | 2019-10-01 |
Family
ID=68028888
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910559411.7A Pending CN110299425A (en) | 2019-06-26 | 2019-06-26 | A kind of photovoltaic back of rapid cooling |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110299425A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113257925A (en) * | 2021-04-12 | 2021-08-13 | 杭州电子科技大学 | Silicon solar cell utilizing infrared anti-reflection heat dissipation |
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| CN104134715A (en) * | 2014-08-11 | 2014-11-05 | 中天光伏材料有限公司 | Black heat dissipation solar cell backboard for building installation type photovoltaic module |
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| CN204189809U (en) * | 2014-11-28 | 2015-03-04 | 明冠新材料股份有限公司 | A kind of high heat radiation anti-pollution type solar cell backboard |
| CN104393084A (en) * | 2014-11-28 | 2015-03-04 | 明冠新材料股份有限公司 | Backboard for high heat dissipation photovoltaic module and preparation method |
| CN208173609U (en) * | 2018-03-28 | 2018-11-30 | 江苏裕兴薄膜科技股份有限公司 | A kind of heat conduction and heat radiation film backboard |
-
2019
- 2019-06-26 CN CN201910559411.7A patent/CN110299425A/en active Pending
Patent Citations (7)
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|---|---|---|---|---|
| KR101070871B1 (en) * | 2010-10-13 | 2011-10-06 | 에플럭스(주) | Back sheet of solar cell module for photovoltaic power generation |
| CN104064613A (en) * | 2014-07-14 | 2014-09-24 | 中天光伏材料有限公司 | High-heat-dissipation type integrated backboard for solar cells and manufacturing method thereof |
| CN104143578A (en) * | 2014-07-31 | 2014-11-12 | 苏州尚善新材料科技有限公司 | Solar energy backing plate and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113257925A (en) * | 2021-04-12 | 2021-08-13 | 杭州电子科技大学 | Silicon solar cell utilizing infrared anti-reflection heat dissipation |
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Application publication date: 20191001 |
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