CN110289490A - A kind of round stage three-dimensional doublet bay applied to 5G millimeter wave - Google Patents

A kind of round stage three-dimensional doublet bay applied to 5G millimeter wave Download PDF

Info

Publication number
CN110289490A
CN110289490A CN201910523910.0A CN201910523910A CN110289490A CN 110289490 A CN110289490 A CN 110289490A CN 201910523910 A CN201910523910 A CN 201910523910A CN 110289490 A CN110289490 A CN 110289490A
Authority
CN
China
Prior art keywords
feed point
radiating element
earth plate
bay
millimeter wave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201910523910.0A
Other languages
Chinese (zh)
Inventor
张为
刘秀博
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tianjin University
Original Assignee
Tianjin University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tianjin University filed Critical Tianjin University
Priority to CN201910523910.0A priority Critical patent/CN110289490A/en
Publication of CN110289490A publication Critical patent/CN110289490A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00Details of, or arrangements associated with, antennas
    • H01Q1/36Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H01Q1/38Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00Details of, or arrangements associated with, antennas
    • H01Q1/48Earthing means; Earth screens; Counterpoises
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00Details of, or arrangements associated with, antennas
    • H01Q1/50Structural association of antennas with earthing switches, lead-in devices or lightning protectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00Antenna arrays or systems
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00Antenna arrays or systems
    • H01Q21/0006Particular feeding systems
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q9/00Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/04Resonant antennas
    • H01Q9/16Resonant antennas with feed intermediate between the extremities of the antenna, e.g. centre-fed dipole

Landscapes

  • Variable-Direction Aerials And Aerial Arrays (AREA)

Abstract

The present invention relates to a kind of round stage three-dimensional doublet bays applied to 5G millimeter wave, including medium substrate (1), the solder ball (4) below the dipole radiating element (2), the earth plate positioned at medium substrate lower surface and feed point (3), earth plate and feed point of medium substrate upper surface and the metal throuth hole (5) for connecting radiating element and feed point;The radiating element is made of four centrosymmetric rectangular metals, and there are annular air gaps between the earth plate and feed point.

Description

A kind of round stage three-dimensional doublet bay applied to 5G millimeter wave
Technical field
The invention patent relates to microwave and millimeter wave field of communication technology more particularly to a kind of circle grades applied to 5G millimeter wave Change three-dimensional doublet bay.
Background technique
With the rapid development of wireless communication, frequency spectrum resource is more and more in short supply, exploitation and using millimeter wave frequency spectrum resource at For the emphasis of the 5th third-generation mobile communication technology, 5G millimeter wave mobile communication has channel capacity wide, and data transmission bauds waits spies fastly Point.And critical component one of of the antenna as 5G millimeter wave mobile communication, it is desirable that its small in size and performance is high.
When linear polarized antenna is with deviateing more and more in the polarization direction of collection of letters antenna and the linear polarization direction of transmission antenna, The signal induced is smaller;When the polarization direction of collection of letters antenna is orthogonal with transmission antenna linear polarization direction, the signal that induces It is zero.Linear polarization mode is more demanding to the direction of antenna.The polarization direction of antenna is often major issue in need of consideration.
For circular polarisation, the polarization direction regardless of antenna of collecting mail, the signal induced be all it is identical, do not have assorted Difference.Any polarized electromagnetic wave can be received by circular polarized antenna, and the electromagnetic wave of circular polarized antenna transmitting can then be appointed Polarized antenna of anticipating receives.So using circular polarisation mode, so that system reduces the azimuthal sensitivity of antenna.
To sum up circular polarized antenna is a kind of common antenna form, and circular polarized antenna is conducive to connect spatial electromagnetic wave It receives, while the interference of misty rain reflection clutter can also be inhibited.
Summary of the invention
In order to solve the above-mentioned technical problem, the purpose of the present invention is to provide the small in size and structures of one kind to be simply applied to The round stage three-dimensional doublet bay of 5G millimeter wave.Technical scheme is as follows:
A kind of round stage three-dimensional doublet bay applied to 5G millimeter wave, including medium substrate (1), be located at medium The dipole radiating element (2) of upper surface of base plate, the earth plate positioned at medium substrate lower surface and feed point (3), earth plate and feedback The solder ball (4) of point lower section and the metal throuth hole (5) for connecting radiating element and feed point;The radiating element is by four centers Symmetrical rectangular metal is constituted, and there are annular air gaps between the earth plate and feed point.
Preferably, the radiating element is made of four centrosymmetric rectangular metals, and the size of each rectangular metal is 2.3mm*0.5mm.Annular air gap between earth plate and feed point, size s is slotted as 0.25mm in the air gap, and feeds it Between the no ground plane in region.The feed point is identical by amplitude, 90 ° of phase phase difference, tetra- road signal feed-in.
The present invention and the advantage of existing invention are:
1. making dipole antenna realize stereoscopic three-dimensional structure from planar structure, convenient for integrated;
2. bay is single layer structure, small in size, at low cost.
3. patch type structure makes application more convenient;
4. bay has the unit for electrical property parameters such as excellent standing wave and gain in millimeter wave frequency band.
5. bay can be used alone, it can also be combined into array format application, expandability is strong.
Detailed description of the invention
Fig. 1 is the cross-sectional view for the round stage three-dimensional doublet bay that the present invention is applied to 5G millimeter wave;
Fig. 2 is the top view for the round stage three-dimensional doublet bay that the present invention is applied to 5G millimeter wave;
Fig. 3 is the bottom view for the round stage three-dimensional doublet bay that the present invention is applied to 5G millimeter wave;
Fig. 4 is the reflection coefficient of inventive antenna array element.
Fig. 5 is phi=0 ° antenna pattern of the inventive antenna array element in 28GHz.
Fig. 6 is phi=90 ° antenna pattern of the inventive antenna array element in 28GHz.
Fig. 7 is axis ratio of the inventive antenna array element in 28GHz.
Specific embodiment
To keep the technical problem to be solved in the present invention, technical solution and advantage clearer, below in conjunction with attached drawing and tool Body embodiment is described in detail.
As shown in Figure 1-3, bay of the invention includes medium substrate 1;Dipole positioned at medium substrate upper surface Radiating element 2;Earth plate and feed point 3 positioned at medium substrate lower surface;Solder ball 4 below earth plate and feed point;Connect spoke Penetrate the metal throuth hole 5 of unit and feed point.
The medium substrate is made of square medium substrate;The radiating element is by four centrosymmetric rectangular metals It constitutes;The earth plate and feed point are made of the metal of base lower surface, and it is empty to there is annular between the earth plate and feed point Gas gap.
The medium substrate 1 is cube structure, and surface shape is square, and length l1 is 6mm, and width w1 is 6mm, height h are 1.4mm;The baseplate material is organic material, and ceramic material and is not limited to above-mentioned material at semiconductor material.
The round stage round stage three-dimensional doublet bay, it is characterised in that: the radiating element 2 is located at described Medium substrate (1) upper surface.
The radiating element is made of four centrosymmetric rectangular metals;Its size l2 is 2.3mm, and width w2 is 0.5mm;
The metal that the earth plate and feed point 3 are located at 1 lower surface of medium substrate is constituted.And between the earth plate and feed point There are annular air gaps.Size s is slotted as 0.25mm in the air gap, and the no ground plane in region between feed.
The feed point is identical by amplitude, 90 ° of phase phase difference, tetra- road signal feed-in.
The metal throuth hole is through medium substrate 1 and connection dipole radiating element 2 and earth plate, 3. metal throuth hole of feed point Diameter D1 is 0.2mm.
The solder ball 4 is located at earth plate, the lower surface of feed point 3.The solder ball material be slicker solder, copper, silver, gold and not It is limited to above-mentioned material.The diameter of solder ball is 0.3mm.

Claims (4)

1. a kind of round stage three-dimensional doublet bay applied to 5G millimeter wave, including medium substrate (1), it is located at medium base The dipole radiating element (2) of plate upper surface, the earth plate positioned at medium substrate lower surface and feed point (3), earth plate and feed point The solder ball (4) of lower section and the metal throuth hole (5) for connecting radiating element and feed point;The radiating element is by four centers pair The rectangular metal of title is constituted.There are annular air gaps between the earth plate and feed point.
2. bay according to claim 1, which is characterized in that the radiating element is by four centrosymmetric rectangles Metal is constituted, and the size of each rectangular metal is 2.3mm*0.5mm.
3. bay according to claim 1, which is characterized in that the annular air gap between earth plate and feed point, Size s is slotted as 0.25mm in the air gap, and the no ground plane in region between feed.
4. bay according to claim 1, which is characterized in that the feed point is identical by amplitude, phase phase difference 90o's Four road signal feed-ins.
CN201910523910.0A 2019-06-17 2019-06-17 A kind of round stage three-dimensional doublet bay applied to 5G millimeter wave Pending CN110289490A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910523910.0A CN110289490A (en) 2019-06-17 2019-06-17 A kind of round stage three-dimensional doublet bay applied to 5G millimeter wave

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910523910.0A CN110289490A (en) 2019-06-17 2019-06-17 A kind of round stage three-dimensional doublet bay applied to 5G millimeter wave

Publications (1)

Publication Number Publication Date
CN110289490A true CN110289490A (en) 2019-09-27

Family

ID=68004546

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910523910.0A Pending CN110289490A (en) 2019-06-17 2019-06-17 A kind of round stage three-dimensional doublet bay applied to 5G millimeter wave

Country Status (1)

Country Link
CN (1) CN110289490A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111934088A (en) * 2020-08-12 2020-11-13 北京合众思壮科技股份有限公司 Planar wide-band antenna device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090322631A1 (en) * 2006-07-21 2009-12-31 Commissariat A L'energie Atomique Antenna and associated measurement sensor
CN106099373A (en) * 2016-07-19 2016-11-09 电子科技大学 A kind of feed structure is with the broadband dipole antenna of parallel resonance ring
CN109244641A (en) * 2018-08-07 2019-01-18 清华大学 Encapsulating antenna and its manufacturing method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090322631A1 (en) * 2006-07-21 2009-12-31 Commissariat A L'energie Atomique Antenna and associated measurement sensor
CN106099373A (en) * 2016-07-19 2016-11-09 电子科技大学 A kind of feed structure is with the broadband dipole antenna of parallel resonance ring
CN109244641A (en) * 2018-08-07 2019-01-18 清华大学 Encapsulating antenna and its manufacturing method

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JEEN-SHEEN ROW 等: "Wideband Reconfigurable Crossed-Dipole Antenna With Quad-Polarization Diversity", 《IEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION》 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111934088A (en) * 2020-08-12 2020-11-13 北京合众思壮科技股份有限公司 Planar wide-band antenna device
CN111934088B (en) * 2020-08-12 2023-09-29 北京合众思壮科技股份有限公司 Planar Broadband Antenna Device

Similar Documents

Publication Publication Date Title
EP3065219B1 (en) Dual-frequency patch antennas
KR100917847B1 (en) Omni-directional planar antenna
US7999753B2 (en) Apparatus and methods for constructing antennas using vias as radiating elements formed in a substrate
CN104051865B (en) Coupled antenna structures and methods
US9048542B2 (en) Side-face radiation antenna and wireless communication module
CN105576353B (en) A kind of helical antenna
KR20080047334A (en) Spiral antenna of end-fed planer type
JP6761737B2 (en) Antenna device
US7675468B2 (en) Portable communication device with ultra wideband antenna
CN105990681A (en) Antenna and airborne communication device
KR100980779B1 (en) Apparatus of Chip Antenna For Ultra-Wide-Band Applications
CN110289490A (en) A kind of round stage three-dimensional doublet bay applied to 5G millimeter wave
CN105024137B (en) Multi-band communication antenna assembly and GNSS receiver with the multi-band communication antenna assembly
CN210984972U (en) Be applied to anti-interference array antenna of big dipper multimode of on-vehicle communication terminal
US9929462B2 (en) Multiple layer dielectric panel directional antenna
CN206022633U (en) A kind of portable multi-function satellite communication antena
US7193580B2 (en) Antenna device
US8872704B2 (en) Integrated antenna and method for operating integrated antenna device
CN110212296A (en) A kind of three-dimensional doublet bay applied to 5G millimeter wave
CN110571516A (en) Z-shaped coupling feed small-sized directional circularly polarized RFID reader antenna
CN105914457B (en) A kind of high-gain aerial of double frequency double fluid
CN108539428A (en) A kind of Broadband circularly polarized antenna of omnidirectional radiation
CN212542676U (en) Oscillator antenna
US20110240744A1 (en) Antenna substrate and rfid tag
CN210628489U (en) Planar Inverted F (PIFA) framework deformed GPS chip antenna

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20190927