CN110289278A - Imaging sensor and forming method thereof - Google Patents
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- CN110289278A CN110289278A CN201910572458.7A CN201910572458A CN110289278A CN 110289278 A CN110289278 A CN 110289278A CN 201910572458 A CN201910572458 A CN 201910572458A CN 110289278 A CN110289278 A CN 110289278A
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- 239000010937 tungsten Substances 0.000 claims description 13
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- 229910052802 copper Inorganic materials 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 9
- 229910052715 tantalum Inorganic materials 0.000 claims description 9
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 9
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- 239000010410 layer Substances 0.000 description 310
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14629—Reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
A kind of imaging sensor and forming method thereof, wherein imaging sensor includes: substrate, and the substrate includes the first face, and the substrate includes image district；Several photoelectricity doped regions in described image area；Transmission gate structure positioned at described image area, surface, the first face；Reflecting layer on the first face of described image area and on transmission gate structure.The image quality of described image sensor is preferable.
Description
Technical field
The present invention relates to semiconductors manufacture and photoelectric imaging technology field, in particular to a kind of imaging sensor and its formation
Method.
Background technique
Imaging sensor refers to the device for converting optical signals to electric signal, usually extensive commercial imaging sensor core
Piece includes charge-coupled device (CCD) and complementary metal oxide semiconductor (CMOS) image sensor chip two major classes.CMOS
Imaging sensor is compared with traditional ccd sensor, has the features such as low-power consumption, inexpensive and compatible with CMOS technology, therefore
It has been more and more widely used.The pixel unit of cmos image sensor is that imaging sensor realizes photosensitive core devices.
Most common pixel unit is the active pixel structure comprising a photodiode and multiple transistors.Photoelectricity in these devices
Diode is photosensitive unit, realizes collection and photoelectric conversion to light, and other MOS transistors are control units, main real
Now photodiode is chosen, is resetted, the control of signal amplification and reading.
Back side illumination image sensor can be received from its back side and be radiated.Different from imaging sensor front-illuminated, in back-illuminated type
In imaging sensor, wiring etc. may influence to radiate received component generally within the front of substrate, and light is from the back of substrate
Face incidence enters.In such manner, it is possible to make incident light beam strikes into photodiode, without being blocked by wiring, thus improve into
Light quantity is penetrated, the shooting effect under illumination condition can be significantly improved.
However, the image quality of existing back-illuminated type image sensor is still to be improved.
Summary of the invention
Present invention solves the technical problem that be a kind of imaging sensor and forming method thereof, with improve imaging sensor at
Image quality amount.
In order to solve the above technical problems, the embodiment of the present invention provides a kind of imaging sensor, comprising: substrate, the substrate
Including the first face, and the substrate includes image district；Several photoelectricity doped regions in described image area；Positioned at described image
The transmission gate structure on area, surface, the first face；Reflecting layer on the first face of described image area and on transmission gate structure.
The transmission gate structure is located at the first face surface of photoelectricity doped region side substrate.
Optionally, further includes: first on the transmission gate structure top surface and sidewall surfaces, the first face is situated between
Matter layer and the conductive layer on first medium layer.
Optionally, the reflecting layer is located at the first medium layer surface；The conductive layer is located at reflection layer surface.
Optionally, the reflecting layer is located in the first medium layer.
Optionally, the reflecting layer is located on transmission gate structure top surface and sidewall surfaces and the first face；It is described
First medium layer is located on the reflecting layer.
Optionally, the conductive layer is electrically connected with transmission gate structure.
Optionally, the material in the reflecting layer is different with the material of first medium layer.
Optionally, the material in the reflecting layer includes: metal and nonmetallic materials.
Optionally, further includes: the conductive plunger in first medium layer, the conductive plunger run through the reflecting layer.
Optionally, when the material in the reflecting layer is metal, there is insulating layer between conductive plunger and reflecting layer.
Optionally, the metal includes: one of copper, tungsten, aluminium, titanium and tantalum or multiple combinations；The thickness in the reflecting layer
Spending range is 5 nanometers~120 nanometers.
Optionally, when the material in the reflecting layer is nonmetallic, comprising: silicon nitride, titanium nitride, tantalum nitride or arsenic
Gallium；The thickness range in the reflecting layer is 5 nanometers~120 nanometers.
Optionally, further includes: on the biography transmission gate structure top surface and sidewall surfaces and the first face
Etching stop layer；The first medium layer is located on the etching stop layer.
Optionally, when the reflecting layer is located on transmission gate structure top surface and sidewall surfaces and the first face,
The reflecting layer and the etching stopping layer stackup are simultaneously in contact.
Optionally, the substrate further include: second face opposite with the first face；Described image sensor further include: be located at
The optical filter on the second face of image district surface；Lenticule positioned at optical filter surface.
Correspondingly, the embodiment of the present invention also provides a kind of forming method of any of the above-described imaging sensor, comprising: provide
Substrate, the substrate includes the first face, and the substrate includes image district；Several photoelectricity doping are formed in described image area
Area；Transmission gate structure is formed on described image area the first face surface；On the first face of described image area and transmission gate structure
Upper formation reflecting layer.
Compared with prior art, the technical solution of the embodiment of the present invention has the advantages that
In the imaging sensor that technical solution of the present invention provides, when incident light is irradiated into substrate from the second face, not
The light fully absorbed by photoelectricity doped region will continue incident towards the first face.Since the reflecting layer is located on the first face, institute
Stating reflecting layer can will continue to reflect towards the light of the first face incidence, thus will again without photoelectric light
It is reflected back in substrate, so as to increase the photon of photoelectricity doped region absorption, is conducive to promote quantum efficiency, so that described image
The image quality of sensor is preferable.
Further, since the material of the etching stop layer usually selects silicon nitride, when the material selection in the reflecting layer
When silicon nitride, while being able to ascend the photon numbers of photoelectricity doped region absorption, avoid additionally introducing element, so that the figure
As the better performances of sensor.
In the forming method for the imaging sensor that technical solution of the present invention provides, when incident light is irradiated into base from the second face
When in bottom, the light not fully absorbed by photoelectricity doped region will continue incident towards the first face.Due to the shape on first face
At reflecting layer, the reflecting layer can will continue to reflect towards the light of the first face incidence, to imitate without photoelectricity
The light answered will be reflected back in substrate again, so as to increase the photon of photoelectricity doped region absorption, be conducive to promote quantum effect
Rate, so that the image quality of the described image sensor formed is preferable.
Further, etching stop layer is formed with sidewall surfaces and the first face surface at the top of the transmission gate structure；
Reflecting layer is formed in the etching stopping layer surface；First medium layer is formed in the reflection layer surface.The usual etch-stop
The only material selection silicon nitride of layer, when the material selection silicon nitride in the reflecting layer, i.e., the material of the described etching stop layer and
The material in reflecting layer is identical, on the one hand, avoids additionally introducing element, so that the better performances of described image sensor；Another party
Face during forming the etching stop layer, is formed simultaneously the reflecting layer, to simplify technique, reduces processing step, has
Conducive to reduction process costs.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of imaging sensor；
Fig. 2 to Fig. 9 is the diagrammatic cross-section of each step of forming method of the imaging sensor in one embodiment of the invention；
Figure 10 to Figure 14 is the section signal of each step of forming method of the imaging sensor in another embodiment of the present invention
Figure；
Figure 15 to Figure 18 is the section signal of each step of forming method of the imaging sensor in further embodiment of this invention
Figure.
Specific embodiment
As described in background, the image quality of conventional images sensor is poor.
It is described in detail below in conjunction with attached drawing, the poor reason of the image quality of imaging sensor, Fig. 1 is a kind of image
The structural schematic diagram of sensor.
Described image sensor includes: semiconductor substrate 100, has photoelectricity doped region in the semiconductor substrate 100
110；First medium layer 120 positioned at 100 surface of semiconductor substrate, the first medium layer 120 is interior to have transmission gate structure
130；Second dielectric layer 140 positioned at 120 surface of first medium layer, the second dielectric layer 140 is interior to have interconnection architecture 141.
In above-mentioned imaging sensor, incident light is initially entered in the photoelectricity doped region 110 in semiconductor substrate 100,
To reduce transmission gate structure 130, second dielectric layer 140 and interconnection architecture 141 in second dielectric layer 140 to entering
The loss of light is penetrated, to improve the image quality of imaging sensor.
However, since absorption coefficient of the semiconductor substrate 100 to the light of different wave length is different, that is, incident light is not complete
It absorbs and passes through photoelectricity doped region 110 and generate photoelectric effect.Photoelectric light, meeting are carried out without photoelectricity doped region 110
Through the photoelectricity doped region 110, to cause the loss of photon, cause the image quality of imaging sensor still poor.
To solve the technical problem, the embodiment of the present invention provides a kind of imaging sensor, comprising: substrate, the substrate
Including the first face, and the substrate includes image district；Several photoelectricity doped regions in described image area；Positioned at described image
The transmission gate structure on area, surface, the first face；Reflecting layer on the first face of described image area and on transmission gate structure.Institute
The image quality for stating imaging sensor is preferable.
It is understandable to enable above-mentioned purpose of the invention, feature and beneficial effect to become apparent, with reference to the accompanying drawing to this
The specific embodiment of invention is described in detail.
Fig. 2 to Fig. 9 is the diagrammatic cross-section of each step of forming method of the imaging sensor in one embodiment of the invention.
Referring to FIG. 2, providing substrate 200, the substrate 200 includes the first face 201, and the substrate 200 includes image
Area A.
In the present embodiment, the substrate 200 further include: second face 202 opposite with the first face 201.
In the present embodiment, the material of the substrate 200 is silicon.In other embodiments, the material of the substrate includes:
SiGe, monocrystalline germanium, silicon carbide, silicon-on-insulator (SOI), germanium on insulator or III-V compounds of group.
There is well region in the substrate 200, there are the first Doped ions in the trap.In the present embodiment, described first
Doped ions are P-type ion, and P-type ion includes boron ion or BF2-。
In other embodiments, first Doped ions are N-type ion, and the N-type ion includes phosphonium ion or arsenic
Ion.
In the present embodiment, imaging sensor to be formed is back-illuminated cmos image sensors.In other embodiments,
Imaging sensor is positive illuminated cmos image sensor.
Referring to FIG. 3, forming several photoelectricity doped regions 210 in described image area A.
There is the second Doped ions, the conduction type and first of second Doped ions in the photoelectricity doped region 210
The conduction type of Doped ions is opposite.
Since first Doped ions are led in the conduction type and well region of second Doped ions in the photoelectricity doped region 210
Therefore electric type is on the contrary, form photodiode.The photodiode is used to the converting photons in incident light be electronics.
In the present embodiment, second Doped ions are N-type ion, such as: phosphonium ion or arsenic ion.
In the present embodiment, the formation process of the photoelectricity doped region 210 includes ion implantation technology.
In the present embodiment, it is illustrated with a photoelectricity doped region 210.In other embodiments, the photoelectricity doping
The number in area 210 is greater than 1.
Referring to FIG. 4, forming transmission gate structure 220 on described image area, 201 surface, the first face A.
The transmission gate structure 220 is located at 201 surface of the first face of 210 side substrate 200 of photoelectricity doped region.
It is described transmission gate structure 220 include: positioned at 201 surface of portion first face gate dielectric layer (not shown) and
Gate electrode layer (not shown) positioned at gate dielectric layer surface.
The material of the gate dielectric layer includes: silica or high K (K is greater than 3.9) dielectric material, the gate electrode layer
Material includes: polysilicon or metal.
In the present embodiment, the transmission gate structure 220 further include: be located at gate dielectric layer and gate electrode layer sidewall surfaces
Sidewall structure (not marked in figure).
In other embodiments, the transmission gate structure can not include sidewall structure.
Referring to FIG. 5, in 201 surface shape of 220 top surface of transmission gate structure and sidewall surfaces and the first face
At etching stop layer 230.
The etching stop layer 230 is used for the subsequent stop-layer that the first opening is formed as etching first medium layer, thus
It avoids that transmission 220 top surface of gate structure is caused to damage.
The material of the etching stop layer 230 includes: silica, silicon nitride, fire sand, nitrogen silicon boride or nitrogen carbon oxygen
SiClx.
The thickness range of the etching stop layer is 30 nanometers~50 nanometers.
In the present embodiment, the material of the etching stop layer 230 is silicon nitride.
Then, reflecting layer is formed on the first face of described image area 201 and on transmission gate structure.
In the present embodiment, it is formed after the etching stop layer, forms the reflection in the etching stopping layer surface
Layer, the reflecting layer and the etching stopping layer stackup are simultaneously in contact.
In other embodiments, it is formed before the etching stop layer, in the transmission gate structure top surface and side
Wall surface and the first face surface form the reflecting layer；The etching stop layer is formed in the reflection layer surface, it is described anti-
It penetrates layer and the etching stopping layer stackup and is in contact.
Referring to FIG. 6, forming the reflecting layer 240 on 230 surface of etching stop layer.
The reflecting layer 240 is located on transmission 220 top surface of gate structure and sidewall surfaces and the first face 201.
240 material of reflecting layer is different with the first medium layer material being subsequently formed.
When incident light is irradiated into substrate 200 from the second face 202, the light that is not fully absorbed by photoelectricity doped region 210
Line will continue incident towards the first face 201.Due to foring reflecting layer 240, the reflecting layer 240 on first face 201
It can will continue to reflect towards the incident light in the first face 201, to will reflect again without photoelectric light
It returns in substrate 200, so as to increase the photon of the absorption of photoelectricity doped region 210, is conducive to promote quantum efficiency, so that formed
The image quality of described image sensor is preferable.
The material in the reflecting layer 240 includes: metal and nonmetallic materials.
The metal material includes: one of copper, tungsten, aluminium, titanium and tantalum or multiple combinations.The nonmetallic materials packet
It includes: silicon nitride, titanium nitride, tantalum nitride or GaAs.
In the present embodiment, the material in the reflecting layer 240 is silicon nitride.
Since the material of the etching stop layer 230 is silicon nitride, the material in the reflecting layer 240 is silicon nitride, that is, institute
It is identical with the material in the reflecting layer 240 to state etching stop layer 230, avoids additionally introducing element, so that described image sensor
Better performances.
Also, the etching stop layer 230 and reflecting layer 240 are laminated, and therefore, can form the etching stop layer
During 230, be formed simultaneously the reflecting layer 240, by same depositing operation can be formed etching stop layer 230 and
Reflecting layer 240 is formed, to simplify technique, processing step is reduced, advantageously reduces process costs.
The thickness range in the reflecting layer 240 is 5 nanometers~120 nanometers.
The reason of selecting the thickness range is: if the thickness in the reflecting layer 240 is less than 5 nanometers, thickness is too thin
Reflecting layer 240, still the light absorbed without photoelectricity doped region 210 effectively can not be reflected back substrate 200, and then again by light
Electrically doped area 210, which absorbs, carries out photoelectric conversion, is unfavorable for improving the image quality of imaging sensor；If the reflecting layer 240
Thickness is greater than 120 nanometers, and the light absorbed without photoelectricity doped region 210 is sufficiently reflected back base in satisfaction by the reflecting layer 240
The case where bottom 200, forms the too thick reflecting layer 240 of thickness, on the one hand, can increase process costs and process time, cause cost
Waste；On the other hand, it will increase wafer stress, be unfavorable for improving the performance of imaging sensor.
In the present embodiment, after forming the reflecting layer, first medium layer is formed in the reflection layer surface, specifically
The process for forming the first medium layer please refers to Fig. 7 to Fig. 8.
In other embodiments, after forming reflecting layer, etching stop layer is formed in the reflection layer surface；Described
Etching stopping layer surface forms first medium layer.
Referring to FIG. 7, forming first medium layer 250 on 240 surface of reflecting layer.
The material of the first medium layer 250 is different with the material in reflecting layer 240.
The material of the first medium layer 250 includes: silica, silicon oxide carbide or silicon oxynitride.
In the present embodiment, the material of the first medium layer 250 is silica.
Referring to FIG. 8, forming conductive plunger 251 in the first medium layer 250, the conductive plunger 251 runs through institute
State reflecting layer 240.
The conductive plunger 251 is used for the conductive layer for being electrically connected transmission gate structure 220 and being subsequently formed.
The forming method of the conductive plunger 251 includes: to be formed to open in the first medium layer 250 and reflecting layer 240
Mouth (not shown), and the open bottom exposes transmission 220 top surface of gate structure, the first medium layer 250
Expose the open top；In the opening and 250 surface of first medium layer forms conductive material membrane and (does not show in figure
Out)；The conductive material membrane is planarized, until exposing 250 surface of first medium layer, forms conductive plunger in the opening
251。
The material of the conductive material membrane includes: one of copper, tungsten, aluminium, titanium and tantalum or multiple combinations, correspondingly, shape
At the material of conductive plunger 251 include: one of copper, tungsten, aluminium, titanium and tantalum or multiple combinations.
In the present embodiment, the material of the conductive material membrane is tungsten, and the material of the conductive plunger 251 of formation is tungsten.
Then, conductive layer is formed on the first medium layer.
In the present embodiment, it is formed after the first medium layer, forms conductive layer in the first medium layer surface.
It is situated between referring to FIG. 9, forming second dielectric layer 260 on 250 surface of first medium layer and being located at described second
Conductive layer 261 in matter layer 260.
The conductive layer 261 is used to carry out the electric signal of 210 photoelectric conversion of photoelectricity doped region by logical device subsequent
Processing.
The conductive layer 261 is electrically connected with transmission gate structure 220.
In the present embodiment, the forming method of described image sensor further include: in 202 table of described image area the second face A
Face forms optical filter (not shown)；Lenticule (not shown) is formed on the optical filter surface.
Correspondingly, the embodiment of the present invention also provides a kind of imaging sensor formed using the above method, please continue to refer to
Fig. 6, comprising: substrate 200, the substrate 200 includes the first face 201, and the substrate 200 includes image district A；Positioned at the figure
As several photoelectricity doped regions 210 in area A；Transmission gate structure 220 positioned at described image area, 201 surface, the first face A；It is located at
Reflecting layer 240 on described image area the first face A 201 and on transmission gate structure 220.
When incident light is irradiated into substrate 200 from the second face 202, the light that is not fully absorbed by photoelectricity doped region 210
Line will continue incident towards the first face 201.Since the reflecting layer 240 is located at 230 surface of etching stop layer, and the etch-stop
Only layer 230 is located at the top of transmission gate structure and 201 surface of sidewall surfaces and the first face, i.e., the described reflecting layer 240 are located at the
On one side on 201.Therefore, the reflecting layer 240 can will continue to reflect towards the incident light in the first face 201, thus not
It will be reflected back again in substrate 200 by photoelectric light, so as to increase the photon of the absorption of photoelectricity doped region 210,
Be conducive to promote quantum efficiency, so that the image quality of described image sensor is preferable.
It is described in detail below in conjunction with attached drawing.
The transmission gate structure 220 is located at 201 surface of the first face of 210 side substrate 200 of photoelectricity doped region.
Described image sensor further include: be located at 220 top surface of transmission gate structure and sidewall surfaces, the first face
First medium layer 250 on 201 and the conductive layer on first medium layer 250 261.
The conductive layer 261 is electrically connected with transmission gate structure 220.
The material in the reflecting layer 240 is different with the material of first medium layer 250.
The material in the reflecting layer 240 includes: metal and nonmetallic materials.
Described image sensor further include: the conductive plunger 251 in first medium layer 250, conductive slotting 251 plug
Through the reflecting layer 240.
In the present embodiment, the material in the reflecting layer 240 is silicon nitride.The thickness range in the reflecting layer 240 is received for 5
Rice~120 nanometers.
Described image sensor further include: be located at pass 220 top surface of transmission gate structure and sidewall surfaces and
Etching stop layer 230 on first face 201；The first medium layer 250 is located on the etching stop layer 230.
When the reflecting layer 240 is located on transmission 220 top surface of gate structure and sidewall surfaces and the first face 201
When, the reflecting layer 240 is laminated and is in contact with the etching stop layer 230.
In the present embodiment, the etching stop layer 230, which is located at, passes 220 top surface of transmission gate structure and side wall
201 surface of surface and the first face；The reflecting layer 240 is located at 230 surface of etching stop layer.
Since the material of the etching stop layer 230 usually selects silicon nitride, when the material selection nitrogen in the reflecting layer 240
When SiClx, while being able to ascend the photon numbers of the absorption of photoelectricity doped region 210, avoid additionally introducing element, so that described
The better performances of imaging sensor.
The substrate 200 further include: second face 202 opposite with the first face 201；Described image sensor further include: position
Optical filter in 202 surface of the second face image district A；Lenticule positioned at optical filter surface.
Figure 10 to Figure 14 is the diagrammatic cross-section of each step of forming method of the imaging sensor of another embodiment of the present invention.
Difference of the present embodiment from above-described embodiment is that the position in reflecting layer is different, and the reflecting layer is located in first medium layer,
Therefore the present embodiment continues to be illustrated the forming method of imaging sensor on the basis of the above embodiments.Please Fig. 5's
On the basis of continue to refer to figure 10, form initial first medium material layer 351 on 230 surface of etching stop layer.
First medium is collectively formed in the initial first medium material layer 351 and the first medium material layer being subsequently formed
Layer, to provide support to be subsequently formed conductive plunger.
The material of the initial first medium material layer 351 is different with the material in the reflecting layer being subsequently formed.
In the present embodiment, the material of the initial first medium material layer 351 are as follows: silica.
Figure 11 is please referred to, is formed after the initial first medium material layer 311, in the initial first medium material layer
351 surfaces form reflecting layer 340.
The material in the reflecting layer 340 is different with the material of the initial first medium material layer 351.
When incident light is irradiated into substrate 200 from the second face 202, the light that is not fully absorbed by photoelectricity doped region 210
Line will continue incident towards the first face 201.Due to foring reflecting layer 340, the reflecting layer 340 on first face 201
It can will continue to reflect towards the incident light in the first face 201, to will reflect again without photoelectric light
It returns in substrate 200, so as to increase the photon of the absorption of photoelectricity doped region 210, is conducive to promote quantum efficiency, so that formed
The image quality of described image sensor is preferable.
The material in the reflecting layer 340 includes: metal and nonmetallic materials.
The metal material includes: one of copper, tungsten, aluminium, titanium and tantalum or multiple combinations.The nonmetallic materials packet
It includes: silicon nitride, titanium nitride, tantalum nitride or GaAs.
In the present embodiment, the material in the reflecting layer 340 is metal, and is tungsten.The thickness range in the reflecting layer 340
It is 5 nanometers~120 nanometers.
The reason of selecting the thickness range is: if the thickness in the reflecting layer 340 is less than 5 nanometers, thickness is too thin
Reflecting layer 340, still the light absorbed without photoelectricity doped region 210 effectively can not be reflected back substrate 200, and then again by light
Electrically doped area 210, which absorbs, carries out photoelectric conversion, is unfavorable for improving the image quality of imaging sensor；If the reflecting layer 340
Thickness is greater than 120 nanometers, and the light absorbed without photoelectricity doped region 210 is sufficiently reflected back base in satisfaction by the reflecting layer 340
The case where bottom 200, forms the too thick reflecting layer 340 of thickness, on the one hand, can increase process costs and process time, cause cost
Waste, be unfavorable for improve imaging sensor performance.
Figure 12 is please referred to, is formed after the reflecting layer 340, forms first medium material on 340 surface of reflecting layer
Layer 352.
The initial first medium material layer 351 and first medium material layer 351 are provided commonly for forming first medium layer
350, therefore, the reflecting layer 340 is located in the first medium layer 350.
The material in the reflecting layer 340 is different with the material of the first medium material layer 352.
In the present embodiment, the material of the material of the first medium material layer 352 and initial first medium material layer 351
It is identical, it is silica.
Figure 13 is please referred to, forms conductive plunger 353 in the first medium layer 350, the conductive plunger 353 runs through institute
State reflecting layer 340.
In the present embodiment, there is insulating layer 3531 between the conductive plunger 353 and reflecting layer 350.
The forming method of the conductive plunger 353 includes: to be formed to open in the first medium layer 350 and reflecting layer 340
Mouth (not shown), and the open bottom exposes transmission 220 top surface of gate structure, the first medium layer 350
Expose the open top；Insulating material membrane is formed in the open bottom and side wall and 350 surface of first medium layer
(not shown)；It forms the insulating materials film surface and forms conductive material membrane (not shown), and the conductive material
Film fills the full opening；The conductive material membrane and insulating material membrane are planarized, until exposing 350 table of first medium layer
Face forms insulating layer 3531 and conductive plunger positioned at 3531 surface of insulating layer in the open bottom and sidewall surfaces
351。
The material of the insulating material membrane includes: silica, silicon nitride, silicon oxynitride or high K dielectric (K is greater than 3.9)
Material, the material of the conductive material membrane include: one of copper, tungsten, aluminium, titanium and tantalum or multiple combinations.
Then, conductive layer is formed on the first medium layer.
In the present embodiment, it is formed after the conductive plunger, forms conductive layer in the first medium layer surface.
Figure 14 is please referred to, forms second dielectric layer 360 on 350 surface of first medium layer and positioned at described second
Conductive layer 361 in dielectric layer 360.
Conductive layer 261 in the conductive layer 361 and above-described embodiment is identical, and details are not described herein.
In the present embodiment, the forming method of described image sensor further include: in 202 table of described image area the second face A
Face forms optical filter (not shown)；Lenticule (not shown) is formed on the optical filter surface.
Correspondingly, the embodiment of the present invention also provides a kind of imaging sensor formed using the above method, please continue to refer to
Figure 12, comprising: substrate 200, the substrate 200 includes the first face 201, and the substrate 200 includes image district A；Positioned at described
Several photoelectricity doped regions 210 in image district A；Transmission gate structure 220 positioned at described image area, 201 surface, the first face A；Position
In the reflecting layer 340 on described image area the first face A 201 and on transmission gate structure 220.
When incident light is irradiated into substrate from the second face 202, the light that is not fully absorbed by photoelectricity doped region will be after
It is continuous incident towards the first face 201.Since the reflecting layer 340 is located in first medium layer 350, and the first medium layer 350
Positioned at 230 surface of etching stop layer, that is, the reflecting layer 340 is located on the first face 201, and the reflecting layer 440 can will continue
The light incident towards the first face 201 is reflected, thus will be reflected back in substrate again without photoelectric light, from
And can increase photoelectricity doped region absorption photon, be conducive to promoted quantum efficiency so that described image sensor at image quality
Amount is preferable.
It is described in detail below in conjunction with attached drawing.
The transmission gate structure 220 is located at 201 surface of the first face of 210 side substrate 200 of photoelectricity doped region.
The imaging sensor further include: be located at 220 top surface of transmission gate structure and sidewall surfaces, first
First medium layer 350 on face 201 and the conductive layer on first medium layer 350 361.
In the present embodiment, the reflecting layer 340 is located in the first medium layer 350.
In the present embodiment, the first medium layer 350 includes: initial first medium material layer 351 and first medium material
The bed of material 352.
The conductive layer 361 is electrically connected with transmission gate structure 220.
The material in the reflecting layer 340 is different with the material of first medium layer 350.
Described image sensor further include: the conductive plunger 353 in first medium layer 350, the conductive plunger 353
Through the reflecting layer 340.
The material in the reflecting layer 340 includes: metal and nonmetallic materials.
The metal includes: one of copper, tungsten, aluminium, titanium and tantalum or multiple combinations.The thickness model in the reflecting layer 340
Enclose is 5 nanometers~120 nanometers.
In the present embodiment, the material in the reflecting layer 340 is tungsten, is had between conductive plunger 353 and reflecting layer 340 exhausted
Edge layer 3531.
Described image sensor further include: be located at pass 220 top surface of transmission gate structure and sidewall surfaces and
Etching stop layer 230 on first face；The first medium layer 350 is located on the etching stop layer 230.
In the present embodiment, the first medium layer 350 is located at 230 surface of etching stop layer.
The substrate 200 further include: second face 202 opposite with the first face 201；Described image sensor further include: position
Optical filter in 202 surface of the second face image district A；Lenticule positioned at optical filter surface.
Figure 15 to Figure 18 is the diagrammatic cross-section of each step of forming method of the imaging sensor of further embodiment of this invention.
The difference of embodiment described in embodiment described in the present embodiment and Fig. 2 to Fig. 9 and Figure 10 to Figure 14 is the position in reflecting layer
Difference, the reflecting layer is located at first medium layer surface, therefore the present embodiment continues on the basis of the above embodiments to image
The forming method of sensor is illustrated.5 please are continued to refer to figure 1 on the basis of Fig. 5, on 230 surface of etching stop layer
Form first medium layer 450.
The first medium layer 450 is identical with 250 material in above-described embodiment, and details are not described herein.
Figure 16 is please referred to, forms reflecting layer 440 on 450 surface of first medium layer.
The material in the reflecting layer 440 is different with the material of the first medium layer 450.
When incident light is irradiated into substrate 200 from the second face 202, the light that is not fully absorbed by photoelectricity doped region 210
Line will continue incident towards the first face 201.Due to foring reflecting layer 440, the reflecting layer 440 on first face 201
It can will continue to reflect towards the incident light in the first face 201, to will reflect again without photoelectric light
It returns in substrate 200, so as to increase the photon of the absorption of photoelectricity doped region 210, is conducive to promote quantum efficiency, so that formed
The image quality of described image sensor is preferable.
The material in the reflecting layer 440 includes: metal and nonmetallic materials.
The metal material includes: one of copper, tungsten, aluminium, titanium and tantalum or multiple combinations.The nonmetallic materials packet
It includes: silicon nitride, titanium nitride, tantalum nitride or GaAs.
In the present embodiment, the material in the reflecting layer 440 is tantalum nitride.
In other embodiments, the material in the reflecting layer can be with aluminium.
Figure 17 is please referred to, forms conductive plunger 451 in the first medium layer 450, the conductive plunger 451 runs through institute
State reflecting layer 440.
It is nonmetallic materials, the material and shape of the conductive plunger since the material in the reflecting layer 440 is silicon oxynitride
Identical as conductive plunger 251 in above-described embodiment at method, details are not described herein.
Then, conductive layer is formed on the first medium layer.
In the present embodiment, it is formed after the conductive plunger, forms conductive layer in the first medium layer surface.
Figure 18 is please referred to, forms second dielectric layer 460 on 450 surface of first medium layer and positioned at described second
Conductive layer 461 in dielectric layer 460.
Conductive layer 261 in the conductive layer 461 and above-described embodiment is identical, and details are not described herein.
In the present embodiment, the forming method of described image sensor further include: in 202 table of described image area the second face A
Face forms optical filter (not shown)；Lenticule (not shown) is formed on the optical filter surface.
Correspondingly, the embodiment of the present invention also provides a kind of imaging sensor formed using the above method, please continue to refer to
Figure 16, comprising: substrate 200, the substrate 200 includes the first face 201, and the substrate 200 includes image district A；Positioned at described
Several photoelectricity doped regions 210 in image district A；Transmission gate structure 220 positioned at described image area, 201 surface, the first face A；Position
In the reflecting layer 440 on described image area the first face A 201 and on transmission gate structure 220.
When incident light is irradiated into substrate from the second face 202, the light that is not fully absorbed by photoelectricity doped region will be after
It is continuous incident towards the first face 201.Since the reflecting layer 440 is located at 450 surface of first medium layer, and first medium layer position
In on the first face 201, that is, the reflecting layer 440 is located on the first face 201, and therefore, the reflecting layer 440 can will continue court
The light incident to the first face 201 is reflected, thus will be reflected back again in substrate 200 without photoelectric light,
So as to increase photoelectricity doped region 210 absorption photon, be conducive to promoted quantum efficiency so that described image sensor at
Image quality amount is preferable.
It is described in detail below in conjunction with attached drawing.
The transmission gate structure 220 is located at 201 surface of the first face of 210 side substrate 200 of photoelectricity doped region.
The imaging sensor further include: be located at 220 top surface of transmission gate structure and sidewall surfaces, first
First medium layer 450 on face 201 and the conductive layer on first medium layer 450 461.
In the present embodiment, the reflecting layer 440 is located at 450 surface of first medium layer；The conductive layer 461 is located at
440 surface of reflecting layer.
The conductive layer 461 is electrically connected with transmission gate structure 220.
The material in the reflecting layer 440 is different with the material of first medium layer 450.
Described image sensor further include: the conductive plunger 454 in first medium layer 450, the conductive plunger 451
Through the reflecting layer 340.
In the present embodiment, the material in the reflecting layer 440 is tantalum nitride.
In other embodiments, the material in the reflecting layer can also be aluminium.
Described image sensor further include: be located at pass 220 top surface of transmission gate structure and sidewall surfaces and
Etching stop layer 230 on first face；The first medium layer 450 is located on the etching stop layer 230.
In the present embodiment, the first medium layer 450 is located at 230 surface of etching stop layer.
The substrate 200 further include: second face 202 opposite with the first face 201；Described image sensor further include: position
Optical filter in 202 surface of the second face image district A；Lenticule positioned at optical filter surface.
Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (17)
1. a kind of imaging sensor characterized by comprising
Substrate, the substrate includes the first face, and the substrate includes image district；
Several photoelectricity doped regions in described image area；
Transmission gate structure positioned at described image area, surface, the first face；
Reflecting layer on the first face of described image area and on transmission gate structure.
2. imaging sensor as described in claim 1, which is characterized in that the transmission gate structure is located at photoelectricity doped region one
The first face surface at side group bottom.
3. imaging sensor as described in claim 1, which is characterized in that further include: it is located at the top of the transmission gate structure
Surface and the first medium layer in sidewall surfaces, the first face and the conductive layer on first medium layer.
4. imaging sensor as claimed in claim 3, which is characterized in that the reflecting layer is located at the first medium layer table
Face；The conductive layer is located at reflection layer surface.
5. imaging sensor as claimed in claim 3, which is characterized in that the reflecting layer is located in the first medium layer.
6. imaging sensor as claimed in claim 3, which is characterized in that the reflecting layer is located at table at the top of transmission gate structure
In face and sidewall surfaces and the first face；The first medium layer is located on the reflecting layer.
7. imaging sensor as claimed in claim 3, which is characterized in that the conductive layer is electrically connected with transmission gate structure.
8. imaging sensor as claimed in claim 3, which is characterized in that the material in the reflecting layer and the material of first medium layer
Material is different.
9. imaging sensor as claimed in claim 8, which is characterized in that the material in the reflecting layer includes: metal and Fei Jin
Belong to material.
10. imaging sensor as claimed in claim 9, which is characterized in that further include: the conduction in first medium layer is inserted
Plug, the conductive plunger run through the reflecting layer.
11. imaging sensor as claimed in claim 10, which is characterized in that conductive when the material in the reflecting layer is metal
There is insulating layer between plug and reflecting layer.
12. imaging sensor as claimed in claim 11, which is characterized in that the metal includes: in copper, tungsten, aluminium, titanium and tantalum
One or more combinations；The thickness range in the reflecting layer is 5 nanometers~120 nanometers.
13. imaging sensor as claimed in claim 10, which is characterized in that when the material in the reflecting layer is nonmetallic, packet
It includes: silicon nitride, titanium nitride, tantalum nitride or GaAs；The thickness range in the reflecting layer is 5 nanometers~120 nanometers.
14. the imaging sensor as described in claim 4,5 or 6, which is characterized in that further include: it is located at and passes the transmission grid
Etching stop layer in pole structural top surface and sidewall surfaces and the first face；The first medium layer is located at the etching
On stop-layer.
15. imaging sensor as claimed in claim 14, which is characterized in that when the reflecting layer is located at transmission gate structure top
When in portion surface and sidewall surfaces and the first face, the reflecting layer and the etching stopping layer stackup are simultaneously in contact.
16. imaging sensor as described in claim 1, which is characterized in that the substrate further include: opposite with the first face
Two faces；Described image sensor further include: the optical filter positioned at the second face of image district surface；Positioned at the micro- of optical filter surface
Mirror.
17. a kind of forming method of any one of such as claim 1 to 16 described image sensor characterized by comprising
Substrate is provided, the substrate includes the first face, and the substrate includes image district；
Several photoelectricity doped regions are formed in described image area；
Transmission gate structure is formed on described image area the first face surface；
Reflecting layer is formed on the first face of described image area and on transmission gate structure.
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