CN110288951A - Solid-state is totally reflected display panel, display device and driving method - Google Patents
Solid-state is totally reflected display panel, display device and driving method Download PDFInfo
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- CN110288951A CN110288951A CN201910535669.3A CN201910535669A CN110288951A CN 110288951 A CN110288951 A CN 110288951A CN 201910535669 A CN201910535669 A CN 201910535669A CN 110288951 A CN110288951 A CN 110288951A
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
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Abstract
The embodiment of the present invention provides a kind of solid-state total reflection display panel, display device and driving method, is related to field of display technology, can be by diode as gating device, and diode can realize the computer heating control of pixel in the case where bearing larger current.The solid-state is totally reflected display panel, comprising: multiple pixel units, each pixel unit include the heating device for stacking gradually setting, reflecting layer, resonant cavity and phase-change material layers；Each pixel unit further includes diode, heating device and Diode series between first voltage end and second voltage end；First control switch pipe, for controlling the on or off between first voltage signal wire and the first power signal line；Second control switch pipe, for controlling the on or off between second voltage signal wire and second source signal wire；Second control switch pipe is PMOS transistor.
Description
Technical field
The present invention relates to field of display technology more particularly to a kind of solid-state total reflection display panels, display device and driving
Method.
Background technique
Solid-state total reflection display panel includes phase-change material (Phase Change Material, PCM), phase-change material tool
There are crystallization state and amorphized state, two states phase-change material has different refractive index, to realize under two states
With different display effects, to realize display function, the switching of two states is realized by way of heating, to different pictures
The computer heating control of element is needed using gating device, and gating device is needed by biggish electric current, therefore, is bearing gating device
Realize that gating control is problem to be solved in the case where larger current.
Summary of the invention
The embodiment of the present invention provides a kind of solid-state total reflection display panel, display device and driving method, can pass through two
Pole pipe can realize the computer heating control of pixel as gating device, diode in the case where bearing larger current.
On the one hand, the embodiment of the present invention provides a kind of solid-state total reflection display panel, comprising:
Array substrate；
It is in multiple pixel units that matrix is arranged, Mei Gesuo on the array substrate, along line direction and column direction
Stating pixel unit includes the heating device for stacking gradually setting, reflecting layer, resonant cavity and phase-change material layers；
Each pixel unit further includes first voltage end, second voltage end and diode, in each pixel list
In member, the heating device and the Diode series are between the first voltage end and the second voltage end, wherein institute
The cathode for stating diode is electrically connected to the first voltage end, and the anode of the diode is electrically connected by the cathode of the diode
It is connected to the first voltage end, the anode of the diode is electrically connected to the second voltage end；
The first voltage end of pixel unit described in a line is electrically connected a first voltage signal wire；
The second voltage end of the one column pixel unit is electrically connected a second voltage signal wire；
First power signal line provides the first power supply signal；
Second source signal wire provides second source signal；
First control switch pipe is electrically connected between the first voltage signal wire and first power signal line, is used
On or off between the control first voltage signal wire and first power signal line；
Second control switch pipe is electrically connected between the second voltage signal wire and the second source signal wire, is used
On or off between the control second voltage signal wire and the second source signal wire；
The second control switch pipe is PMOS transistor.
On the other hand, the embodiment of the present invention also provides a kind of display device, is totally reflected display panel including above-mentioned solid-state.
On the other hand, the embodiment of the present invention also provides a kind of driving method, is totally reflected display panel for above-mentioned solid-state,
The driving method includes:
Within the same period, only have a first voltage signal wire and institute by first control switch control system
It states and is connected between the first power signal line, ended between other described first voltage signal wires and first power signal line；
Within the same period, only has a second voltage signal wire by second control switch control system
It is connected between the second source signal wire, is cut between other described second voltage signal wires and the second source signal wire
Only.
Solid-state total reflection display panel, display device and driving method in the embodiment of the present invention, pass through diode conduct
The gating device of each pixel unit, diode can realize the computer heating control of pixel in the case where bearing larger current, separately
Outside, the second control switch pipe of setting is PMOS, the grid voltage of the second control switch pipe can be made lower, to meet driving chip
Demand, improve the stability of driving.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is this hair
Bright some embodiments for those of ordinary skill in the art without any creative labor, can be with
It obtains other drawings based on these drawings.
Fig. 1 is that a kind of a kind of equivalent circuit structure of solid-state total reflection display panel partial region in the embodiment of the present invention shows
It is intended to；
Fig. 2 is a kind of a kind of cross-section structure signal of solid-state total reflection display panel partial region in the embodiment of the present invention
Figure；
Fig. 3 is a kind of cross-section structure signal that another solid-state is totally reflected display panel partial region in the embodiment of the present invention
Figure；
Fig. 4 is a kind of a kind of domain structure signal of solid-state total reflection display panel partial region in the embodiment of the present invention
Figure；
Fig. 5 is a kind of cross-section structure signal that another solid-state is totally reflected display panel partial region in the embodiment of the present invention
Figure；
Fig. 6 is a kind of equivalent circuit structure that another solid-state is totally reflected display panel partial region in the embodiment of the present invention
Schematic diagram；
Fig. 7 is a kind of structural schematic diagram of display device in the embodiment of the present invention；
Fig. 8 be the embodiment of the present invention in a pixel unit crystallization period and decrystallized period time diagram.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is
A part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art
Every other embodiment obtained without creative efforts, shall fall within the protection scope of the present invention.
The term used in embodiments of the present invention is only to be not intended to be limiting merely for for the purpose of describing particular embodiments
The present invention.In the embodiment of the present invention and the "an" of singular used in the attached claims, " described " and "the"
It is also intended to including most forms, unless the context clearly indicates other meaning.
As depicted in figs. 1 and 2, Fig. 1 is one of a kind of solid-state total reflection display panel partial region in the embodiment of the present invention
Kind equivalent circuit structure schematic diagram, Fig. 2 are a kind of one kind of solid-state total reflection display panel partial region in the embodiment of the present invention
The schematic diagram of the section structure, the embodiment of the present invention provide a kind of solid-state total reflection display panel, comprising: array substrate 1；Positioned at array
It is in multiple pixel units 2 of matrix arrangement on substrate, along line direction h1 and column direction h2, each pixel unit 2 includes successively
Stack heating device R, reflecting layer 21, resonant cavity 22 and the phase-change material layers 23 of setting, wherein heating device R is shown in Fig. 1
Mean adding thermal resistance, but it is not limited to this, this is illustrated for sentencing adding thermal resistance, and effect is issued in the function of current
Heat makes the crystallization state of phase-change material layers 23 change by release heat, such as crystallization state and amorphized state it
Between convert, reflecting layer 21 be used for reflection light, resonant cavity 22 be used to form microcavity and phase-change material layers 23 cooperation it is specific to realize
The outgoing of wavelength light can make different pixels unit 2 realize the display of different colours that is, by the thickness of adjusting resonant cavity 22,
For phase-change material layers 23 for converting under crystallization state and amorphized state, both states are different physical states, crystallization
Atom periodic arrangement under state in phase-change material layers 23, the atom random ordering row under amorphized state in phase-change material layers 23
Column, the characteristic that there is phase-change material layers 23 state to keep have bistable state, under two states, phase-change material layers 23 cooperate
The switching between two kinds of colors may be implemented in resonant cavity 22；Each pixel unit 2 further includes first voltage end V1, second voltage end
V2 and diode D, in each pixel unit 2, heating device R and diode D are series at first voltage end V1 and second voltage
It holds between V2, wherein the cathode of diode D is electrically connected to first voltage end V1, and the anode of diode D passes through the yin of diode D
Pole is electrically connected to first voltage end V1, and the anode of diode D is electrically connected in second voltage end V2, Fig. 1 and only illustrates diode D
The structure being connected between heating device R and first voltage end V1, in the embodiment of the present invention, for diode D and heating device R
Electrically connecting position be not construed as limiting, as long as the two is connected between first voltage end V1 and second voltage end V2, and diode D
Cathode is electrically connected to first voltage end V1, and the anode of diode D is electrically connected to second voltage end V2；One-row pixels unit 2
First voltage end V1 be electrically connected a first voltage signal wire ROW；The second voltage end V2 electrical connection one of one column pixel unit 2
Second voltage signal wire COL；First power signal line Vrow, provides the first power supply signal；Second source signal wire Vcol, mentions
For second source signal；First control switch pipe M, is electrically connected to first voltage signal wire ROW and the first power signal line Vrow
Between, for controlling the on or off between first voltage signal wire ROW and the first power signal line Vrow；Second control is opened
Pipe T is closed, is electrically connected between second voltage signal wire COL and second source signal wire Vcol, for controlling second voltage signal
On or off between line COL and second source signal wire Vcol；Second control switch pipe T is PMOS transistor.In order to make
Heat can be provided by obtaining adding thermal resistance, need to provide power supply signal for adding thermal resistance, and power supply signal needs are controlled, with
Convenient for applying power supply signal to adding thermal resistance when needing adding thermal resistance to provide heat, heat is provided not needing adding thermal resistance
Forbid applying power supply signal to adding thermal resistance when amount, the on-off action that can use transistor at this time is realized to power supply signal
Control.
On the other hand, the embodiment of the present invention also provides a kind of driving method, is totally reflected display panel for above-mentioned solid-state,
Driving method include: within the same period, by the first control switch pipe M control only first voltage signal wire ROW with
It is connected between first power signal line Vrow, ends between other first voltage signal wire ROW and the first power signal line Vrow；
Within the same period, pass through the second control switch pipe T control only a second voltage signal wire COL and second source signal wire
It is connected between Vcol, ends between other second voltage signal wire COL and second source signal wire Vcol.
Specifically, only illustrate that two rows two column, totally four pixel units 2 are formed by matrix of pixel cells in Fig. 1, it is practical
Usually there is greater number of pixel unit 2 to form matrix, to realize that picture is shown, every row pixel unit 2 and every first electricity
Signal wire ROW is pressed to correspond, each column pixel unit 2 and each column second voltage signal wire COL are corresponded, every first voltage
Signal wire ROW is electrically connected to the first power signal line Vrow, every second voltage signal by corresponding first control switch pipe M
Line COL is electrically connected to second source signal wire Vcol by corresponding second control switch pipe T.It is right respectively during driving
Each pixel unit 2 carries out signal input, to realize the corresponding 23 carry out state conversion of phase-change material layers of pixel unit 2, so that
State after the pixel unit 2 is converted according to phase-change material layers 23 realizes that corresponding color is shown, for example, to the first row the
When one column pixel unit 2 carries out signal input, the corresponding first control switch pipe M of the first row pixel unit 2 conducting, other first
Control switch pipe M cut-off, i.e. be connected, the period between the first row first voltage signal wire ROW and the first power signal line Vrow
It is interior, the corresponding second control switch pipe T of first row pixel unit 2 conducting, other the second control switch pipe T cut-off, i.e. first row
It is connected between second voltage signal wire COL and second source signal wire Vcol, at this point, the of the first row first row pixel unit 2
One voltage end V1 has the first power supply signal, and the second voltage end V2 of the first row first row pixel unit 2 believes with second source
Number, heating device R and diode D conducting in the pixel unit 2 of voltage official post provided by the two, i.e. current flows through heater
Part R and diode D, as current flows through heater part R, heating device R fever, the generated heat of heating device R fever makes
Phase-change material layers 23 above heating device R are undergone phase transition, and make phase-change material layers 23 between crystallization state and amorphized state
Conversion, after state converts, which is the state change for completing display color, in the pixel unit 2
Heating device R adstante febre, the heating device R in other pixel units 2 will not generate heat, and therefore, only the pixel unit 2 is corresponding
Phase-change material layers 23 can undergo phase transition, other corresponding phase-change material layers 23 of pixel unit 2 keep original state.When certain
After the signal input of one pixel unit 2 is completed, signal input can be carried out to other pixel units 2, and so on, one by one
Signal input is carried out to pixel unit 2, to realize the refreshing of entire display picture.
It should be noted that since heating device R adstante febre needs to flow through larger current, at this time, it may be necessary to first voltage end
There is biggish voltage difference between V1 and second voltage end V2, therefore, when the voltage value corresponding to the V2 of second voltage end is larger,
Such as second source signal wire Vcol, when providing the voltage of 30V, if the second control switch pipe T is NMOS, grid is corresponding
Conducting voltage be 30V+Vth, i.e., when its grid voltage be greater than 30V+Vth when be connected, required gate voltage values it is absolute
It is worth larger, Vth is the threshold voltage of the second control switch pipe T, and grid voltage provides by driving chip, and driving chip provides
The ability of big voltage value is poor, and therefore, in order to guarantee the stability of driving, it is PMOS that the second control switch pipe T, which can be set, this
When, if second source signal wire Vcol provides the voltage of 30V, the corresponding electric conduction of grid of the second control switch pipe T
Pressure is 30V-Vth, i.e., is connected when its grid voltage is less than 30V-Vth, at this point, voltage magnitude to be offered needed for driving chip
Smaller, that is, the stability driven is higher.
Solid-state total reflection display panel and driving method in the embodiment of the present invention, by diode as each pixel list
The gating device of member, diode can realize the computer heating control of pixel in the case where bearing larger current, in addition, setting second
Control switch pipe is PMOS, and the grid voltage of the second control switch pipe can be made lower, to meet the needs of driving chip, is improved
The stability of driving.
Optionally, the first control switch pipe M is NMOS transistor.
Specifically, when certain pixel unit 2 carries out signal input, first voltage end V1 has lower voltage, second voltage
Hold V2 that there is high voltage, when the voltage value corresponding to the V1 of first voltage end is lower, such as the first power signal line Vrow is mentioned
For -30V voltage when, if the first control switch pipe M be PMOS, the corresponding conducting voltage of grid be -30-Vth, that is, work as
Its grid voltage is connected when being less than -30-Vth, and the absolute value of required gate voltage values is larger, and Vth is that first control is opened
The threshold voltage of pipe is closed, grid voltage is provided by driving chip, and the ability that driving chip provides big voltage magnitude is poor, because
This, in order to guarantee the stability of driving, it is NMOS that the first control switch pipe M, which can be set, at this point, if the first power signal line
The corresponding conducting voltage of grid of the voltage value of Vrow offer -30V, the first control switch pipe M is -30V+Vth, i.e., when its grid
Pole tension is connected when being greater than -30V+Vth, at this point, absolute value of voltage to be offered needed for driving chip is smaller, that is, the stabilization driven
Property is higher.
Optionally, solid-state total reflection display panel includes the direction of the plane where being totally reflected display panel perpendicular to solid-state
On the semiconductor layer 24, the first metal layer 25, second metal layer 26, the heating device R, reflecting layer 21, resonance that are cascading
Chamber 22 and phase-change material layers 23；The PN junction of diode D is located at semiconductor layer 24, and the anode D1 and cathode D2 of diode D is located at the
Two metal layers 26, anode D1 and cathode D2 are electrically connected to PN junction by via hole；First control switch pipe M and the second control switch pipe
The active layer M1 of T is located at semiconductor layer 24, is used to form channel, the source electrode of the first control switch pipe M and the second control switch pipe T
M2 and drain electrode M3 is located at second metal layer 26, source electrode M2 and drain electrode M3 and is electrically connected to active layer M1 by via hole, and the first control is opened
The grid M4 for closing pipe M and the second control switch pipe T is located at the first metal layer 25, wherein only illustrates the first control in Fig. 2 and opens
Close the film layer structure of pipe M.
Specifically, for each pixel unit 2, the cathode D2 of diode D is electrically connected to first voltage signal wire ROW, and two
The connecting node of person is first voltage end V1, and first voltage signal wire ROW is electrically connected to the source electrode M2 of the first control switch pipe M,
The anode D1 of diode D is electrically connected to one end of heating device R, and the other end of heating device R is electrically connected to second voltage signal
Line COL, the connecting node of the two are second voltage end V2, and the drain electrode M3 of the first control switch pipe M is electrically connected to the first power supply letter
Number line Vrow, the source electrode of the second control switch pipe T are electrically connected to second source signal wire Vcol, the leakage of the second control switch pipe T
Pole is electrically connected to second voltage signal wire COL.Glass substrate or flexible base board, phase can be set in Fig. 2 below semiconductor layer 24
Change material layer 23 includes the lower organic layer of thermal conductivity far from the side heating device R, so that phase-change material layers 23 can heat
Reach required temperature under the action of device R, as early as possible to realize that state is converted.
Optionally, one of first voltage signal wire ROW and second voltage signal wire COL are located at the first metal layer 25,
In addition one is located at second metal layer 26.In the structure of meaning shown in Fig. 2, first voltage signal wire ROW is located at second metal layer
26, second voltage signal wire COL are located at the first metal layer 25, since first voltage signal wire ROW is for connecting every row pixel list
Member 2, second voltage signal wire COL is for connecting each column pixel unit 2, first voltage signal wire ROW and second voltage signal wire
COL needs to insulate arranged in a crossed manner, therefore, directly sets the two to be located at different metal layers, can be to avoid the first electricity
The cross-line processing that pressure signal wire ROW and second voltage signal wire COL is prepared in same layer, simplifies preparation process.
Optionally, shown in as shown in Figure 1, Figure 3 and Figure 4, Fig. 3 is that another solid-state is totally reflected display panel in the embodiment of the present invention
A kind of the schematic diagram of the section structure of partial region, Fig. 4 are a kind of solid-state total reflection display panel part area in the embodiment of the present invention
A kind of domain structure schematic diagram in domain, is provided with third metal layer 27 between heating device R and second metal layer 26；First voltage
One of signal wire ROW and second voltage signal wire COL are located at third metal layer 27, and in addition one is located at the first metal layer 25
Or second metal layer 26.
Specifically, in Fig. 3 and structure illustrated in Figure 4, first voltage signal wire ROW is located at second metal layer 26, the
Two voltage signal line COL are located at third metal layer 27, in this way, the first voltage signal wire ROW for being located at third metal layer 27 can be with
It is overlapping with the metal layer of lower section, it can to there is bigger line width, the first voltage letter that each pixel unit 2 can be made to be received
The voltage value that number line ROW is transmitted is more nearly, to improve the homogeneity of display picture.It should be noted that not showing in Fig. 4
Heating device of anticipating out R only illustrates the via hole link position R1 between heating device R and first voltage signal wire ROW, and
Via hole link position R2 between heating device R and second metal layer 26, at R2, heating device R passes through via hole and the second gold medal
Belong to the metal gasket electrical connection in layer 26, which is electrically connected by via hole with the PN junction of diode D in semiconductor layer 24,
Figure 4, it is seen that since second voltage signal wire COL is located at third metal layer 27, it not will receive other metal layers
Influence, second voltage signal wire COL can be set with biggish line width, to reduce in signals transmission in the second electricity
Press the pressure drop on signal wire COL.
Optionally, as shown in Figure 1 and Figure 5, Fig. 5 is that another solid-state is totally reflected display panel part in the embodiment of the present invention
A kind of the schematic diagram of the section structure in region, one of first voltage signal wire ROW and second voltage signal wire COL are located at reflection
Layer 21, in addition one is located at the first metal layer 25 or second metal layer 26.
Specifically, in the structure of meaning shown in Fig. 5, first voltage signal wire ROW is located at second metal layer 26, second voltage
Signal wire COL is located at reflecting layer 21, since reflecting layer 21 can be made by metal material, to realize the function of reflected light,
Therefore, second voltage signal wire COL can be made by reflecting layer 21, in this way, second voltage signal wire COL can be made to be multiplexed
It is used as reflecting layer 21, on the one hand, the second voltage signal wire COL positioned at reflecting layer 21 can be handed over the metal layer of lower section
It is folded, it can there is bigger line width, what the first voltage signal wire ROW that each pixel unit 2 can be made to be received was transmitted
Voltage value is more nearly, to improve the homogeneity of display picture；On the other hand, it is not necessary that additional metal layer is fabricated separately, saves
Process costs are saved.
Optionally, solid-state is totally reflected display panel further include: the first scan drive circuit (not shown), the first scanning
Driving circuit is electrically connected to the control terminal of each first control switch pipe M, the i.e. grid of the first control switch pipe M；Second scanning
Driving circuit, the second scan drive circuit (not shown) are electrically connected to the control terminal of each second control switch pipe T, i.e., and
The grid of two control switch pipe T.
Specifically, the first scan drive circuit is used to provide scanning signal to drive the first control switch pipe M to be connected one by one,
Second scan drive circuit is for providing scanning signal to drive the second control switch pipe T to be connected one by one, for example, first first sweeps
It retouches driving circuit and controls first the first control switch pipe M conducting, at this point, the second scan drive circuit controls first second control
Switch transistor T conducting processed, i.e., carry out signal input to the first row first row pixel unit 2, then, first first control is kept to open
Pipe M conducting is closed, the second scan drive circuit controls second the second control switch pipe T conducting, i.e., to the first row secondary series pixel
Unit 2 carries out signal input, and so on, after the first row pixel unit 2 scans completion, the first scan drive circuit control
Second the first control switch pipe M conducting of system, the second scan drive circuit controls first the second control switch pipe T and leads at this time
It is logical, i.e., signal input is carried out to the second row first row pixel unit 2, then, keeps second the first control switch pipe M conducting,
Second turntable driving end line controls second the second control switch pipe T conducting, i.e., carries out to the second row secondary series pixel unit 2
Signal input, and so on, after the second row pixel unit 2 scans completion, in the same way to the third line pixel
Unit 2 is scanned, and the scanning one by one of each pixel unit 2 is realized with this, realizes the refreshing of entire picture.
Optionally, solid-state is totally reflected display panel further include: driving chip (not shown), driving chip are electrically connected to
The control terminal of the control terminal of each first control switch pipe M and each second control switch pipe T.
Specifically, driving chip is directly connected to the driving method of the first control switch pipe M and the second control switch pipe T,
It is different from such a way that scan drive circuit drives, since the corresponding phase-change material layers 23 of pixel unit 2 are with bistable
Feature, state can be kept, therefore, the refreshing for picture, and without periodically carrying out signal input for each pixel unit 2, only
It needs to carry out signal input to the pixel unit 2 for having change in new picture, to change the phase-change material layers 23 of respective pixel unit 2
State, therefore, can directly by driving chip directly search state to be changed pixel unit 2 carry out signal it is defeated
Enter, lasting scanning is carried out without using scan drive circuit, the power consumption of the driving method is lower.
Optionally, as shown in fig. 6, Fig. 6 is that another solid-state is totally reflected display panel partial region in the embodiment of the present invention
A kind of equivalent circuit structure schematic diagram, it includes two article first power signal line Vrow and two article that solid-state, which is totally reflected display panel,
Two power signal line Vcol；First voltage signal wire ROW includes first end and second end, first voltage signal wire ROW's
First end is electrically connected to a first power signal line Vrow, first voltage signal wire by a first control switch pipe M
The second end of ROW is electrically connected to another the first power signal line Vrow by another the first control switch pipe M；Second electricity
Pressure signal wire COL includes first end and second end, and the first end of second voltage signal wire COL passes through one second control
Switch transistor T is electrically connected to a second source signal wire Vcol, the second end of second voltage signal wire COL by another the
Two control switch pipe T are electrically connected to another second source signal wire Vcol.
Specifically, first voltage signal wire ROW needs to connect one-row pixels unit 2, and second voltage signal wire COL needs to connect
A column pixel unit 2 is connect, pressure drop can be generated on signal wire in signals transmission, lead to the electricity received at different location
Pressure value has difference, in the embodiment of the present invention, connect at the both ends of first voltage signal wire ROW and second voltage signal wire COL
It is connected to corresponding power signal line, by way of bilateral transmission signal, reduces the voltage value difference received at different location
It is different.
As shown in fig. 7, Fig. 7 is a kind of structural schematic diagram of display device in the embodiment of the present invention, the embodiment of the present invention is also
A kind of display device is provided, is totally reflected display panel 100 including above-mentioned solid-state.
Specifically, the specific structure of solid-state total reflection display panel 100 is same as the previously described embodiments, and details are not described herein.
The display device can be any with display function such as mobile phone, tablet computer, laptop, electric paper book or television set
The electronic equipment of energy.
Optionally, as illustrated in figures 1 and 8, Fig. 8 is a pixel unit in the embodiment of the present invention in crystallization period and amorphous
The time diagram for changing the period, on the basis of above-mentioned driving method, when the same period is crystallization period t1, crystallization period t1
It successively include crystallization stage t11 and crystallization discharge regime t12, in crystallization stage t11, second source signal wire Vcol output first
Voltage H1, the first power signal line Vrow export second voltage H2, the voltage between second voltage end V2 and first voltage end V1
Difference is H1-H2, H1 > H2, and diode D is connected under the voltage difference, and the calorific value of heating device R melts phase-change material layers 23,
It maintains crystallization temperature that crystallization occurs after a certain period of time, exports third electricity in crystallization discharge regime t12, second source signal wire Vcol
H3, the first power signal line Vrow is pressed to export second voltage H2, the voltage difference between second voltage end V2 and first voltage end V1
For H3-H2 < 0, diode D ends at this time, and heating device R no current passes through, and stops heating, and phase-change material layers 23 is made to anneal, at
For crystallization state, meanwhile, in crystallization stage t11 and crystallization discharge regime t12, first voltage signal corresponding to the pixel unit 2
It is connected between line ROW and the first power signal line Vrow, second voltage signal wire COL and second corresponding to the pixel unit 2
It is connected between power signal line Vcol, the voltage on crystallization discharge regime t12, second source signal wire Vcol is by higher
One voltage H1 is switched to lower tertiary voltage H3, so that higher voltage on second voltage signal wire COL is discharged, to prevent
Adverse effect only is caused to other pixel units 2；When the same period is decrystallized period t2, decrystallized period t2 successively includes
Decrystallized stage t21 and decrystallized discharge regime t22, in decrystallized stage t21, the first electricity of second source signal wire Vcol output
H1, the first power signal line Vrow is pressed to export the 4th voltage H4, the voltage difference between second voltage end V2 and first voltage end V1
For H1-H4 > H1-H2, diode D is connected under the voltage difference, and the calorific value of heating device R makes phase-change material layers 23 higher
At a temperature of melt, in decrystallized discharge regime t22, second source signal wire Vcol exports tertiary voltage H3, the first power supply letter
Number line Vrow exports second voltage H2, wherein the electricity between H1 > H2 > H3 > H4, second voltage end V2 and first voltage end V1
Pressure difference is H3-H2 < 0, and diode D ends at this time, and heating device R no current passes through, and stops heating, the phase transformation material after making fusing
23 instantaneous solidification of the bed of material, becomes amorphous state, meanwhile, in decrystallized stage t21 and decrystallized discharge regime t22, the pixel unit 2
It is connected between corresponding first voltage signal wire ROW and the first power signal line Vrow, second corresponding to the pixel unit 2
It is connected between voltage signal line COL and second source signal wire Vcol, in decrystallized discharge regime t22, second source signal wire
Voltage on Vcol is switched to lower tertiary voltage H3 by higher first voltage H1, thus by second voltage signal wire COL
Upper higher voltage discharges, to prevent from causing adverse effect to other pixel units 2.It should be noted that in certain pixel list
Member 2 carry out signal input, when so that corresponding phase-change material layers 23 being converted between different conditions, other pixel units 2 pair
Only having a signal line on the first voltage signal wire ROW and second voltage signal wire COL answered has voltage, therefore, other pixels
Unit 2 is inputted without signal, the state before the corresponding holding of phase-change material layers 23.
Optionally, driving method includes: that the first control switch pipe M of control is connected one by one, to realize pixel unit 2 line by line
Scanning, within the time of same first control switch pipe M conducting, the second control switch pipe T of control is connected one by one, to realize
In the scanning process of every row pixel unit 2, each pixel unit 2 in the row is scanned one by one, and detailed process can refer to above-mentioned
It include the driving process in the structure of the first scan drive circuit and the second scan drive circuit in embodiment；Alternatively, control the
Two control switch pipe T are connected one by one, to realize the scanning of pixel unit 2 by column, in same second control switch pipe T conducting
In time, the first control switch pipe M of control is connected one by one, to realize in the scanning process of each column pixel unit 2, scans one by one
Each pixel unit 2 in the column.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Within mind and principle, any modification, equivalent substitution, improvement and etc. done be should be included within the scope of the present invention.
Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention., rather than its limitations；To the greatest extent
Pipe present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: its according to
So be possible to modify the technical solutions described in the foregoing embodiments, or to some or all of the technical features into
Row equivalent replacement；And these are modified or replaceed, various embodiments of the present invention technology that it does not separate the essence of the corresponding technical solution
The range of scheme.
Claims (13)
1. a kind of solid-state is totally reflected display panel characterized by comprising
Array substrate；
It is in multiple pixel units that matrix is arranged, each picture on the array substrate, along line direction and column direction
Plain unit includes the heating device for stacking gradually setting, reflecting layer, resonant cavity and phase-change material layers；
Each pixel unit further includes first voltage end, second voltage end and diode, in each pixel unit,
The heating device and the Diode series are between the first voltage end and the second voltage end, wherein described two
The cathode of pole pipe is electrically connected to the first voltage end, and the anode of the diode is electrically connected to by the cathode of the diode
The first voltage end, the anode of the diode are electrically connected to the second voltage end；
The first voltage end of pixel unit described in a line is electrically connected a first voltage signal wire；
The second voltage end of the one column pixel unit is electrically connected a second voltage signal wire；
First power signal line provides the first power supply signal；
Second source signal wire provides second source signal；
First control switch pipe is electrically connected between the first voltage signal wire and first power signal line, for controlling
Make the on or off between the first voltage signal wire and first power signal line；
Second control switch pipe is electrically connected between the second voltage signal wire and the second source signal wire, for controlling
Make the on or off between the second voltage signal wire and the second source signal wire；
The second control switch pipe is PMOS transistor.
2. solid-state according to claim 1 is totally reflected display panel, which is characterized in that
The first control switch pipe is NMOS transistor.
3. solid-state according to claim 1 is totally reflected display panel, which is characterized in that
The solid-state total reflection display panel includes being totally reflected where display panel on the direction of plane perpendicular to the solid-state
Semiconductor layer, the first metal layer, second metal layer, the heating device, the reflecting layer, the resonance being cascading
Chamber and the phase-change material layers；
The PN junction of the diode is located at the semiconductor layer, and the anode and the cathode of the diode are located at described the
Two metal layers, the anode and cathode are electrically connected to the PN junction by via hole；
The active layer of the first control switch pipe and the second control switch pipe is located at the semiconductor layer, first control
The source electrode and drain electrode of switching tube processed and the second control switch pipe is located at the second metal layer, and the source electrode and drain electrode passes through
Via hole is electrically connected to the active layer, and the grid of the first control switch pipe and the second control switch pipe is located at described the
One metal layer.
4. solid-state according to claim 3 is totally reflected display panel, which is characterized in that
One of the first voltage signal wire and the second voltage signal wire are located at the first metal layer, in addition one
Positioned at the second metal layer.
5. solid-state according to claim 3 is totally reflected display panel, which is characterized in that
Third metal layer is provided between the heating device and the second metal layer；
One of the first voltage signal wire and the second voltage signal wire are located at the third metal layer, in addition one
Positioned at the first metal layer or second metal layer.
6. solid-state according to claim 3 is totally reflected display panel, which is characterized in that
One of the first voltage signal wire and the second voltage signal wire are located at the reflecting layer, and in addition one is located at
The first metal layer or second metal layer.
7. solid-state according to claim 1 is totally reflected display panel, which is characterized in that further include:
First scan drive circuit, first scan drive circuit are electrically connected to the control of each first control switch pipe
End；
Second scan drive circuit, second scan drive circuit are electrically connected to the control of each second control switch pipe
End.
8. solid-state according to claim 1 is totally reflected display panel, which is characterized in that further include:
Driving chip, the driving chip are electrically connected to the control terminal and each described second of each first control switch pipe
The control terminal of control switch pipe.
9. solid-state according to claim 1 is totally reflected display panel, which is characterized in that
The solid-state total reflection display panel includes two first power signal lines and two second source signal wires；
The first voltage signal wire includes first end and second end, and the first end of the first voltage signal wire passes through
One the first control switch pipe is electrically connected to first power signal line, and the second of the first voltage signal wire
End is electrically connected to another first power signal line by the first control switch pipe described in another；
The second voltage signal wire includes first end and second end, and the first end of the second voltage signal wire passes through
One the second control switch pipe is electrically connected to the second source signal wire, and the second of the second voltage signal wire
End is electrically connected to another second source signal wire by the second control switch pipe described in another.
10. a kind of display device, which is characterized in that aobvious including solid-state as in one of claimed in any of claims 1 to 9 total reflection
Show panel.
11. a kind of driving method, which is characterized in that aobvious for solid-state as in one of claimed in any of claims 1 to 9 total reflection
Show that panel, the driving method include:
Within the same period, pass through first control switch control system only one article of first voltage signal wire and described the
It is connected between one power signal line, ends between other described first voltage signal wires and first power signal line；
Within the same period, only have a second voltage signal wire and institute by second control switch control system
It states and is connected between second source signal wire, ended between other described second voltage signal wires and the second source signal wire.
12. driving method according to claim 11, which is characterized in that
When the same period is the crystallization period, the crystallization period successively includes crystallization stage and crystallization discharge regime,
The crystallization stage, the second source signal wire export first voltage H1, and first power signal line exports second voltage
H2, in the crystallization discharge regime, the second source signal wire exports tertiary voltage H3, the first power signal line output
The second voltage H2；
When the same period is the decrystallized period, the decrystallized period successively includes decrystallized stage and decrystallized electric discharge
In the stage, in the decrystallized stage, the second source signal wire exports the first voltage H1, first power signal line
The 4th voltage H4 is exported, in the decrystallized discharge regime, the second source signal wire exports the tertiary voltage H3, described
First power signal line exports the second voltage H2, wherein H1 > H2 > H3 > H4.
13. driving method according to claim 11, which is characterized in that the driving method includes:
The first control switch pipe is controlled to be connected one by one, within the time of the same first control switch pipe conducting, control
The second control switch pipe is made to be connected one by one；
Alternatively, control the second control switch pipe is connected one by one, in the time of the same second control switch pipe conducting
It is interior, it controls the first control switch pipe and is connected one by one.
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| CN110288951B (en) | 2021-04-02 |
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