CN110286565A - OPC model building device and forming method thereof, OPC modeling method - Google Patents
OPC model building device and forming method thereof, OPC modeling method Download PDFInfo
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- CN110286565A CN110286565A CN201910589741.0A CN201910589741A CN110286565A CN 110286565 A CN110286565 A CN 110286565A CN 201910589741 A CN201910589741 A CN 201910589741A CN 110286565 A CN110286565 A CN 110286565A
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- model building
- opc model
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
- G03F7/70441—Optical proximity correction [OPC]
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
Abstract
The present invention relates to OPC model building device and forming method thereof, OPC modeling method, the OPC model building device includes: substrate, including opposite first surface and second surface；At least one optical sensor device in the substrate first surface, the light receiving surface of the optical sensor device are exposed to the first surface of the substrate.The OPC model building device can be improved the accuracy of OPC model.
Description
Technical field
The present invention relates to technical field of semiconductors more particularly to a kind of OPC model building device and forming method thereof, a kind of OPC
Modeling method.
Background technique
With the sustainable development of integrated circuit, manufacturing technology constantly towards smaller size develop, lithographic process at
For the main bottleneck of limitation integrated circuit Xiang Geng little characteristic size development.In the semiconductors manufacture of deep-submicron, key graphic
Size be far smaller than the wavelength of light source, due to the diffraction effect of light, causing light shield to project to silicon wafer draw above shape has
Very big variation, such as the variation of line width, the sphering of corner, various optical approach effect (OPE, the Optical such as shortening of wire length
Proximity Effects)。
In order to correct OPE, need to carry out optical proximity effect finishing (OPC, Optical Proximity to mask pattern
Correction).By carrying out OPC to mask pattern, so that OPE phenomenon is offset, so that the figure and mesh that are formed on silicon wafer
Shape of marking on a map is consistent.
Existing OPC method is all based on OPC model progress, and OPC model is required to completely describe to include optical system
Entire photoetching process including system, exposure mask, photoresist and etching technics.To reach higher calculating speed, these models are all
Using approximate model, wherein including a series of mathematical formulaes and parameter, it is all made of approximate solution, solution procedure needs experimental data
It is fitted, to guarantee the accuracy of model.Obvious experimental data is more, and models fitting is more accurate.But too many test chart
Shape can make the collecting amount of wafer data too big.
The accuracy of OPC model determines the accuracy of litho pattern, therefore, how to further increase the standard of OPC model
True property is current urgent problem to be solved.
Summary of the invention
The technical problem to be solved by the invention is to provide a kind of OPC model building devices and forming method thereof, the modeling side OPC
Method, to improve the accuracy of OPC modeling.
To solve the above-mentioned problems, the present invention provides a kind of OPC model building device, the OPC model building devices, comprising: base
Piece, including opposite first surface and second surface；At least one optical sensor device in the substrate first surface,
The light receiving surface of the optical sensor device is exposed to the first surface of the substrate.
Optionally, the first surface overall flat of the light receiving surface of the optical sensor device and the substrate.
Optionally, further includes: protective layer, the protective layer cover the first surface and the optical sensing of the substrate
Device, and the surface of the protective layer is flat.
Optionally, the center and edge of the substrate are distributed with the optical sensor device.
Optionally, the optical sensor device includes pixel array, and the photosensitive area of the pixel array is more than or equal to light
The maximum for carving board can exposure area area.
Optionally, the pixel array includes several pixel units, the size of the pixel unit and the wave of photolithography light source
Long matching.
Optionally, the optical sensor device further includes application of logic circuit module and power module.
Optionally, the second surface and the pixel battle array of the application of logic circuit module and/or power module from the substrate
Column connection.
Optionally, the substrate is wafer.
Technical solution of the present invention also provides a kind of forming method of OPC model building device, comprising: provides at least one optics
Senser element；A substrate is provided, the substrate includes first surface and second surface, is formed in the first surface of the substrate
At least one recess；At least one described optical sensor device is embedded in correspondingly at least one described recess, institute
The light receiving surface for stating optical sensor device is exposed to the first surface of the substrate.
Optionally, the first surface overall flat of the light receiving surface of the optical sensor device and the substrate.
Optionally, further includes: form protective layer, the protective layer covers the first surface and the optics of the substrate
Senser element, and the surface of the protective layer is flat.
Optionally, described be recessed is distributed in center and the marginal position of the substrate.
Optionally, the optical sensor device includes pixel array, and the photosensitive area of the pixel array is more than or equal to light
The maximum for carving board can exposure area area.
Optionally, the pixel array includes several pixel units, the size of the pixel unit and the wave of photolithography light source
Long matching.
Optionally, the optical sensor device further includes application of logic circuit module and power module.
Optionally, further includes: by application of logic circuit module and/or power module from the second surface and the picture of the substrate
Pixel array connection.
Technical solution of the present invention also provides a kind of OPC modeling method, comprising: provides OPC model building device；It provides to have and survey
Attempt the mask plate of shape；Using the mask plate, OPC model building device surface is exposed, exposure area is located at described
In the light receiving surface region of optical sensor device；The light distribution of exposure process is obtained by the optical sensor device；
OPC model is established according to the light distribution and photolithographic parameters.
Optionally, further includes: the photoresist at least covering the optical sensor device is formed on OPC model building device surface
Layer, the photoresist layer surface are flat；The photoresist layer on OPC model building device surface is exposed.
Optionally, the OPC model building device includes more than two optical sensor devices being set at different location；Also wrap
Include: the light distribution obtained at different location by optical sensor device of described two arrangement above at different location is poor
It is different；Using the light distribution difference as a part of OPC model.
OPC model building device of the invention includes substrate and optical sensor device, is able to enter photoetching equipment and is exposed place
Reason, can obtain the light distribution for being really in exposure process by the optical sensor device, to obtain accurate OPC mould
Type improves the accuracy of OPC model.
Detailed description of the invention
Figure 1A to Figure 1B is the structural schematic diagram of the OPC model building device of the embodiment of the invention；
Fig. 2 is the structural schematic diagram of the OPC model building device of another specific embodiment of the present invention；
Fig. 3 to Fig. 4 is the structural schematic diagram of the OPC model building device forming process of another specific embodiment of the present invention；
Fig. 5 is the flow diagram of the OPC modeling method of the embodiment of the invention；
Fig. 6 is the schematic diagram being exposed in the embodiment of the invention to the OPC model building device.
Specific embodiment
With reference to the accompanying drawing to the specific reality of OPC model building device provided by the invention and forming method thereof, OPC modeling method
The mode of applying elaborates.
Figure 1A and 1B are please referred to, is the structural schematic diagram of the OPC model building device of the embodiment of the invention, Tu1BWei
The diagrammatic cross-section of secant AA ' along Figure 1A.
The OPC model building device includes substrate 100 and at least one optical sensor device in the substrate 100
101。
The substrate 100 includes opposite first surface 1001 and second surface 1002.The optical sensor device 101 is embedding
In in the first surface 1001.
The substrate 100 can be bare silicon wafer, and in other specific embodiments, the substrate 100 can also be compound
Layer structure, for example including bare silicon wafer and positioned at the coating of the bare crystalline circular surfaces, the optical sensor device 101 can be embedding
In in the coating；The coating can be dielectric layer, silicon epitaxial layers, polysilicon layer etc..
The optical sensor device 101 can for cmos image sensor, ccd image sensor or other can obtain
The optical sensor device of light intensity distributions.The optical sensor device 101 includes pixel array, and the pixel array includes several
The pixel unit of array arrangement.The area of the pixel array is the photosensitive area of the optical sensor device 101.Single picture
The size of plain unit can be Wavelength matched with light to be detected, and the matching refers to the wavelength close to light to be detected, such as deviation
Within 10%, to improve the reception for treating detection light.For example, current litho machine generallys use DUV light source, such as
The DUV wavelength that KrF excimer laser generates is 248nm, and the DUV wavelength that ArF excimer laser generates is 193nm, described
Size in all directions of pixel unit can be equal or close to optical source wavelength.
The optical sensor device 101 can be the bare chip (die) of the optical sensor formed, without carrying out lens group
It is filled with and encapsulates.The bare chip generally goes through thinned, thickness of the thickness less than single-wafer.The optical sensor device 101
It further include application of logic circuit module and power module, the application of logic circuit module, power module can be with the pixel array shapes
At on same bare chip, positioned at the side of the pixel array or bottom or top (not blocking pixel array).At other
In specific embodiment, the application of logic circuit module, power module can also be formed in another independently of the pixel array
Or on multiple chips, and it is electrically connected by being formed between bonding, connection structure laterally or longitudinally and pixel array.It is formed
The bare chip for stating application of logic circuit module and/or power module can be embedded in the first surface 1001 or the second table of the substrate 100
In face 1002, is formed laterally or/and between longitudinal connection structure and pixel array and be electrically connected.Preferably, the logic circuit
The second surface 1002 of module and/or power module from the substrate 100 is connect with the pixel array.
In the inventive solutions, the specific structure of the optical sensor device 101 is not limited, it is only necessary to the light
The light receiving surface for learning senser element 101 is exposed to the first surface 1001, can receive illumination.
The optical sensor device 101 is used to obtain the light intensity point when photoetching process reaches crystal column surface for exposure light
Cloth, therefore, the photosensitive area of the optical sensor device 101 be greater than or equal to litho machine maximum can exposure area area, with
Obtain complete light distribution in exposure area.In a specific embodiment, the photosensitive area of the optical sensor device 101
Domain sizes are 26mm × 32mm.
In this specific embodiment, the first surface on the surface of the optical sensor device 101 and the substrate 100
1001 is coplanar, whole to keep flat.Preferably, the first surface on 101 surface of optical sensor device and the substrate 100
Gapless between 1001.
Referring to FIG. 2, the OPC model building device further includes a protective layer in another specific embodiment of the present invention
203, cover substrate 201 and optical sensor device 202.
In the specific embodiment, the optical sensor device 202 is slightly above the surface of the substrate 201.In other tools
In body embodiment, the optical sensor device 202 can also be slightly below the surface of the substrate 201.Pass through the protective layer
203 make up the difference in height between 201 surface of the optical sensor device 202 and the substrate, so that the OPC model building device table
Face keeps flat, is conducive to when carrying out OPC modeling, forms photoresist layer in homogeneous thickness on OPC model building device surface.Institute
Stating protective layer 203 can be the dielectric materials such as silica, silicon nitride, by controlling the thickness of the protective layer 203, so that OPC
While model building device surface is flat, certain transparency is kept, does not influence the light of photolithographic exposure process by the optical sensing
Device 202 is received.
Please continue to refer to Figure 1A and 1B, in the specific embodiment, the OPC model building device only includes the optics
Senser element 101.In other specific embodiments, the OPC model building device also may include two or more optics
Senser element 101 is respectively arranged at the different location of the substrate 100, such as: at least in the centre bit of the substrate 100
The optical sensor device 101 is installed, other optical sensor devices 101 then can be set in the edge of substrate 100.
The multiple optical sensor device 101 can be centrosymmetric distribution about the center of the substrate 100.In different location
The optical sensor 101 is arranged in place, is conducive to obtain in photoetching process, the light distribution difference at different location, thus just
It is modified in during OPC.
Above-mentioned OPC model building device is used as test sample, is directly entered in photoetching equipment.In exposure process,
Light distribution situation of the light intensity in crystal column surface that photolithographic exposure process is directly acquired by optical sensor device, to establish standard
True OPC model.
The OPC model building device can be reused, and in semiconductor technology processing procedure, arbitrarily need to carry out the step of OPC
In rapid, accurate OPC model is established using the OPC model building device.
A specific embodiment of the invention also provides the forming method of above-mentioned OPC model building device.
Fig. 3 to Fig. 4 is please referred to, is the forming process of the OPC model building device of the embodiment of the invention.
Referring to FIG. 3, providing at least one optical sensor device 301, substrate 300 is provided, the substrate includes the first table
Face 3001 and second surface 3002 are formed at least one recess 302 in the first surface 3001 of the substrate 300.
The optical sensor device 101 can for cmos image sensor, ccd image sensor or other can obtain
The optical sensor device of light intensity distributions.The optical sensor device 101 can be the bare chip of the optical sensor formed
(die), without progress lens assembling and encapsulation.The bare chip generally goes through thinned, thickness of the thickness less than single-wafer
Degree.
The optical sensor device 301 includes pixel array, and the pixel array includes the pixel list of several array arrangements
Member.The area of the pixel array is the photosensitive area of the optical sensor device 101.The size of single pixel unit can be with
Wavelength matched with light to be detected, the matching refers to the wavelength close to light to be detected, such as deviation is within 10%, with raising
Treat the reception of detection light.For example, current litho machine generallys use DUV (Deep UV) light source, such as KrF quasi-molecule
The DUV wavelength that laser generates is 248nm, and the DUV wavelength that ArF excimer laser generates is 193nm, can be according to use
The specific wavelength of DUV designs the size on pixel unit direction, so that the size in all directions of the pixel unit is equal to
Or close to wavelength.The photosensitive area of the optical sensor device 301 be greater than or equal to litho machine maximum can exposure area area,
To obtain complete light distribution in exposure area.In a specific embodiment, the optical sensor device 301 is photosensitive
Area size is 26mm × 32mm.
The optical sensor device 301 further includes application of logic circuit module and power module.In some specific embodiments
In, the application of logic circuit module, power module can be formed on same bare chip with the pixel array, be located at the pixel
The side or bottom of array or top (not blocking pixel array).In other specific embodiments, the logic circuit mould
Block, power module can also be formed on another or multiple chips independently of the pixel array.
The substrate 300 can be bare silicon wafer, and in other specific embodiments, the substrate 300 can also be compound
Layer structure, for example including bare silicon wafer and positioned at the coating of the bare crystalline circular surfaces, the coating can be dielectric layer, outer
Prolong silicon layer, polysilicon layer etc..
300 surface of substrate can be performed etching according to the size of the optical sensor device 101, formation and institute
The corresponding recess 302 of size of optical sensor device 101 is stated, so that 302 sizes of the recess and being slightly larger than or equal to the light
Learn the size of senser element 101.
In other specific embodiments, multiple optical sensor devices 301 can be provided, correspondingly, in the substrate 300
Multiple recess 302 with corresponding number.The multiple recess 302 can be respectively arranged at the different location of the substrate 100
Place, such as: at least the substrate 300 center be arranged one recess 302, others recess 302 then can be set in
The edge of substrate 300.Multiple recess 302 can be centrosymmetric distribution about the center of the substrate 300.
Referring to FIG. 4, at least one described optical sensor device 301 is embedded in correspondingly, described at least one is recessed
It falls into 302 (please referring to Fig. 3), the light receiving surface of the optical sensor device 301 is exposed to the first surface of the substrate 300
3001。
In the specific embodiment, the size of the recess 302 is matched with the size of the optical sensor device 301, just
The optical sensor device 301 can be accommodated well.By way of pressing, the optical sensor device 301 is embedded in the recess
In 302, and make the light receiving surface of the optical sensor device 301 and the whole holding of the first surface 3001 flat.
In other specific embodiments, after the optical sensor device 301 is embedded in the recess 302, the light
The light receiving surface for learning senser element 301 can also be subsequent by forming covering slightly above or for the first surface 3001
The first surface 3001 of the substrate 300 and the protective layer of the optical sensor device 301, and the protective layer is flat
It is smooth, made up by the protective layer difference in height between 301 surface of first surface 3001 and the optical sensor device and
Gap that may be present between the optical sensor device 301 and substrate 300 is filled, so that OPC model building device surface is protected
Maintain an equal level smooth.
Specifically, the protective layer can be the dielectric materials such as silica, silicon nitride, by the thickness for controlling the protective layer
Degree, while so that OPC model building device surface is flat, keeps certain transparency, does not influence the light of photolithographic exposure process by institute
Optical sensor device 301 is stated to be received.It can be by the techniques such as depositing, coating in the substrate 300 and optical sensor device 301
Surface forms the protected material bed of material, then planarizes to the protected material bed of material, forms the flat protective layer in surface.
In the specific embodiment, the application of logic circuit module and power module and pixel of the optical sensor device 301
Array is formed on same bare chip (DIE), is embedded in the recess 302 simultaneously.It is described in other specific embodiments
One or two of application of logic circuit module and power module module may be located on another or multiple circuit chips, can
To form the recess for corresponding to circuit chip around recess 302 while forming recess 302, so as to by the circuit
Chip is also embedded in the substrate 300.
It, can also be by the circuit where the application of logic circuit module and/or power module in other specific embodiments
Chip is embedded in the second surface 3002 of the substrate 300, or is affixed on the second surface 3002, or independently of described
Substrate 300 is placed, and by being formed laterally or/and being formed between longitudinal connection structure and pixel array inside substrate 300
Electrical connection.
A specific embodiment of the invention also provides a kind of OPC modeling method using above-mentioned OPC model building device.
Referring to FIG. 5, the flow diagram of the OPC modeling method for the embodiment of the invention.
In the specific embodiment, the OPC modeling method includes the following steps:
Step S101: providing OPC model building device described in previous embodiment, and the OPC model building device has one
Optical sensor device.
The specific structure of the OPC model building device can refer to the description of previous embodiment, specifically repeat no more.
Step S102: the photoresist layer at least covering the optical sensor device, institute are formed on OPC model building device surface
It is flat to state photoresist layer surface.
In the thickness of the photoresist layer and practical photoetching process, the parameter of the photoresist layer of use is consistent, including photoresist layer
Type, thickness, formation process etc., so as to obtain photoresist model identical with practical photoetching process.
If only needing to obtain optical model, photoresist is not considered, also may not need and formed on OPC model building device surface
Photoresist layer, be subsequently used for being formed not include photoresist model OPC model.
Step 103: the mask plate with resolution chart is provided.
The resolution chart formed on the mask plate, for obtaining the optical model of photoetching process.
Step S104: the mask plate is utilized, the photoresist layer on OPC model building device surface is exposed, exposure region
Domain is located in the light receiving surface region of the optical sensor device of the OPC model building device.
Step S105: the light distribution of exposure process is obtained by the optical sensor device of the OPC model building device.
The optical sensor device of the OPC model building device can completely obtain light source by projecting after the mask plate
Light distribution on to photoresist layer, to obtain the optics and photoresist model in accurate true photoetching process.
In some embodiments, the OPC model building device includes more than two light being set at different location
Learn senser element；It can be by optical sensor device of described two arrangement above at different location to obtain at different location
Light distribution difference.
Step S106: OPC model is established according to the light distribution and photolithographic parameters.
According to the light distribution that the optical sensor device of the OPC model building device obtains, thickness, exposure mask in conjunction with photoresist layer
The items photolithographic parameters such as resolution chart and optical source wavelength of plate, establish OPC model.Due to the light distribution, accurately reflect
Light source by mask plate, lens, reach photoresist layer after light distribution, to obtain accurate true photoresist model and optics
Model, so that the OPC model finally established is more accurate, so that OPC effect is more preferable.
Also, it can also be obtained at different location by more than two optical sensor devices being set at different location
Light distribution difference, so that the light distribution difference being added in different exposure areas in OPC model can when carrying out OPC
Calibration is carried out for the difference of this part, so that OPC effect is more preferable.
Referring to FIG. 6, for the schematic diagram being exposed in the embodiment of the invention to the OPC model building device.
The OPC model building device 609 that surface is formed with photoresist layer is placed on the wafer susceptor 608 of litho machine.The OPC
Model building device 609 includes wafer 6091 and the optical sensor device 6092 for being embedded in 6091 surface of wafer.To the OPC
Model building device 609 is exposed, and the light that the illuminating source 601 of litho machine generates is handled through filter device 602 obtains effective light
After carving light source, using the resolution chart penetrated after condenser lens 603 on mask plate 604, using pupil 607, projection objective
607, it is finally incident upon 609 surface of OPC model building device, photoresist layer is exposed.Exposure area is limited in the optical sensing
In the light-receiving surface of device 6092, the optical sensor device 6092 is enabled accurately to obtain light distribution, and optical signal is turned
It is changed to electric signal output.
In other specific embodiments, the litho machine of other structures can also be used, this is not restricted.
Above-mentioned OPC modeling method is obtained true in photoetching process using the OPC model building device with optical sensor device
Light distribution improves OPC efficiency to be conducive to improve the accuracy of the OPC model obtained.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
Member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications also should be regarded as
Protection scope of the present invention.
Claims (20)
1. a kind of OPC model building device characterized by comprising
Substrate, including opposite first surface and second surface；
At least one optical sensor device in the substrate first surface, the light receiving surface of the optical sensor device are sudden and violent
It is exposed to the first surface of the substrate.
2. OPC model building device according to claim 1, which is characterized in that the light receiving surface of the optical sensor device with
The first surface overall flat of the substrate.
3. OPC model building device according to claim 1, which is characterized in that further include: protective layer, the protective layer covering
The first surface of the substrate and the optical sensor device, and the surface of the protective layer is flat.
4. OPC model building device according to claim 1, which is characterized in that the center and edge of the substrate are equal
The optical sensor device is distributed with.
5. OPC model building device according to claim 1, which is characterized in that the optical sensor device includes pixel array,
The maximum that the photosensitive area of the pixel array is more than or equal to photoetching equipment can exposure area area.
6. OPC model building device according to claim 5, which is characterized in that the pixel array includes several pixel units,
The size of the pixel unit and photolithography light source it is Wavelength matched.
7. OPC model building device according to claim 5, which is characterized in that the optical sensor device further includes logic electricity
Road module and power module.
8. OPC model building device according to claim 7, which is characterized in that the application of logic circuit module and/or power module
It is connect from the second surface of the substrate with the pixel array.
9. OPC model building device according to claim 1, which is characterized in that the substrate is wafer.
10. a kind of forming method of OPC model building device characterized by comprising
At least one optical sensor device is provided；
A substrate is provided, the substrate includes first surface and second surface, is formed at least in the first surface of the substrate
One recess；
At least one described optical sensor device is embedded in correspondingly at least one described recess, the optical sensing
The light receiving surface of device is exposed to the first surface of the substrate.
11. the forming method of OPC model building device according to claim 10, which is characterized in that the optical sensor device
Light receiving surface and the substrate first surface overall flat.
12. the forming method of OPC model building device according to claim 10, which is characterized in that further include: form protection
Layer, the protective layer covers the first surface and the optical sensor device of the substrate, and the surface of the protective layer is flat
It is smooth.
13. the forming method of OPC model building device according to claim 10, which is characterized in that the recess is distributed in institute
State center and the marginal position of substrate.
14. the forming method of OPC model building device according to claim 10, which is characterized in that the optical sensor device
Including pixel array, the maximum that the photosensitive area of the pixel array is more than or equal to photoetching equipment can exposure area area.
15. the forming method of OPC model building device according to claim 14, which is characterized in that the pixel array includes
Several pixel units, the size of the pixel unit and photolithography light source it is Wavelength matched.
16. the forming method of OPC model building device according to claim 14, which is characterized in that the optical sensor device
It further include application of logic circuit module and power module.
17. the forming method of OPC model building device according to claim 16, which is characterized in that further include: by logic circuit
Module and/or power module are connect from the second surface of the substrate with the pixel array.
18. a kind of OPC modeling method characterized by comprising
OPC model building device as claimed in any one of claims 1-9 wherein is provided；
The mask plate for having resolution chart is provided；
Using the mask plate, OPC model building device surface is exposed, exposure area is located at the optical sensor device
Light receiving surface region in；
The light distribution of exposure process is obtained by the optical sensor device；
OPC model is established according to the light distribution and photolithographic parameters.
19. OPC modeling method according to claim 18, which is characterized in that further include: in the OPC model building device table
Face forms the photoresist layer at least covering the optical sensor device, and the photoresist layer surface is flat；To the OPC model building device table
The photoresist layer in face is exposed.
20. OPC modeling method according to claim 18, which is characterized in that the OPC model building device includes two or more
The optical sensor device being set at different location；Further include: pass through optics of described two arrangement above at different location
Senser element obtains the light distribution difference at different location；Using the light distribution difference as a part of OPC model.
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| CN101290893A (en) * | 2007-04-16 | 2008-10-22 | 日月光半导体制造股份有限公司 | Glue sealing method of sensor chip |
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