CN110284194A - A kind of yttrium vanadate crystal thin slice production technology - Google Patents

A kind of yttrium vanadate crystal thin slice production technology Download PDF

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Publication number
CN110284194A
CN110284194A CN201910665129.7A CN201910665129A CN110284194A CN 110284194 A CN110284194 A CN 110284194A CN 201910665129 A CN201910665129 A CN 201910665129A CN 110284194 A CN110284194 A CN 110284194A
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CN
China
Prior art keywords
crystal
yttrium
yvo4
production technology
thin slice
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201910665129.7A
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Chinese (zh)
Inventor
俞平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zhejiang Xintai Communication Technology Co Ltd
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Zhejiang Xintai Communication Technology Co Ltd
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Publication date
Application filed by Zhejiang Xintai Communication Technology Co Ltd filed Critical Zhejiang Xintai Communication Technology Co Ltd
Priority to CN201910665129.7A priority Critical patent/CN110284194A/en
Publication of CN110284194A publication Critical patent/CN110284194A/en
Pending legal-status Critical Current

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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B19/00Single-purpose machines or devices for particular grinding operations not covered by any other main group
    • B24B19/22Single-purpose machines or devices for particular grinding operations not covered by any other main group characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B29/00Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
    • B24B29/02Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/16Oxides
    • C30B29/22Complex oxides
    • C30B29/30Niobates; Vanadates; Tantalates
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/14Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions the crystallising materials being formed by chemical reactions in the solution

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The invention discloses a kind of yttrium vanadate crystal thin slice production technology, including Yttrium Orthovanadate (YVO4) crystal growth, ammonium metavanadate (NH4VO3) solution is dissolved, it is purified by high temperature, then yttrium oxide (Y2O3) is carried out mixed dissolution by nitrous acid (HNO2), then Yttrium Orthovanadate (YVO4) crystal is put into and is precipitated, the process that reacts is added ammonium hydroxide and generates oxalic acid, then pass through separation of solid and liquid, centrifugation, washing and drying and etc., present invention innovation operates crystal by multiple steps, so that the crystal that the production technology comes out has preferable exquisite process, further by during initial production, also the mixing and reaction of multiple steps are carried out, again by separation of solid and liquid, and etc. increase crystal entirety degree of purity, it makes it have preferably Assimilation effect when being applied to it in equipment, has better practicability.

Description

A kind of yttrium vanadate crystal thin slice production technology
Technical field
The invention is related to yttrium vanadate crystal field, in particular to a kind of yttrium vanadate crystal thin slice production technology.
Background technique
In recent years, as optical fiber laser starts to step into market, yttrium vanadate crystal starts to play effect more pair, The orientation of optical fiber laser application is very extensive, including laser fiber communication, the application of laser remote communication, military weapon, work Multiple manufacturings such as industry manufacture, have and absorb higher higher communication band under laser wavelength, if higher absorption shadow It rings and has arrived going deep into for laser application.
After the manufacturing process that Yttrium Orthovanadate completes crystal is completed, when it needs to use on different devices, for vanadium The integral manufacturing of sour yttrium crystal require it is relatively high, especially its cutting or later period it is selected during, only merely Carry out post-processing the problem of it is sorted, will lead to crystal bulk quality, leading to itself, have the effect of, receives shadow It rings, or during post-production, occurs processing not exquisite, excessively simple, part is caused defect occur.
Innovation and creation content
The purpose of the invention is to provide a kind of yttrium vanadate crystal thin slice production technology.
The above-mentioned technical purpose of the invention has the technical scheme that
A kind of yttrium vanadate crystal thin slice production technology, which is characterized in that including Yttrium Orthovanadate (YVO4) crystal growth, by ammonium metavanadate (NH4VO3) solution is dissolved, and is purified by high temperature, and then yttrium oxide (Y2O3) is carried out by nitrous acid (HNO2) Mixed dissolution is then put into Yttrium Orthovanadate (YVO4) crystal and is precipitated, and the process that reacts is added ammonium hydroxide and generates oxalic acid, then By separation of solid and liquid, centrifugation, washing and drying, then Yttrium Orthovanadate (YVO4) crystal after refined filtration by throwing, orienting in advance And cutting, before three be repeated after operation three times, carry out in inspection, by Yttrium Orthovanadate (YVO4) crystal of interior inspection again into After twice corase grinding repeatedly and essence throw, reach and pass through essence inspection and plated film after requirement, by finally carrying out finished product packing, third Preceding Yttrium Orthovanadate (YVO4) crystal by after cutting is directly simplified, directly into plated film and packing.
Preferably, temperature passes through heating at 4-5 between 1000-1250 ° to heating in mixed liquor Between hour.
Preferably, being polished using the Yttrium Orthovanadate (YVO4) polishing crystal machine to plane of crystal, Yttrium Orthovanadate (YVO4) Crystal, which is placed on glass slide, is placed on device side, is oriented by X-ray positioner, again by diamond dresser Carry out corase grinding and rough polishing, it is desirable that in profile control less than 0.25 λ, while the depth of parallelism is less than 0.05mm.
Preferably, carrying out smart throwing to the surface of Yttrium Orthovanadate (YVO4) crystal, together further by single side polishing machine machine When chip the long Yttrium Orthovanadate of lower shaft (YVO4) crystal reconditioning bottom sides and side top, while the required precision after reconditioning is small In 6 points.
Preferably, controlling the pH value of liquid during Yttrium Orthovanadate (YVO4) crystal production between 7.5-8.
Preferably, the addition proportion of the ammonium metavanadate (NH4VO3) and yttrium oxide (Y2O3) is 3 parts: 5 parts.
Detailed description of the invention
Fig. 1 is the invention device flow diagram.
Specific embodiment
As described below is only the preferred embodiment of the invention, and protection scope is not limited merely to the embodiment, all The protection scope of the invention should belong in the technical solution belonged under the invention thinking.Simultaneously it should be pointed out that for For those skilled in the art, several improvements and modifications under the premise of not departing from the invention principle, this A little improvements and modifications also should be regarded as the protection scope of the invention.
As shown in Figure 1, a kind of yttrium vanadate crystal thin slice production technology, which is characterized in that including Yttrium Orthovanadate (YVO4) crystal Growth, ammonium metavanadate (NH4VO3) solution is dissolved, the addition proportion of ammonium metavanadate (NH4VO3) and yttrium oxide (Y2O3) It is 3 parts: 5 parts, is purified by high temperature, to heating in mixed liquor, temperature passes through and adds between 1000-1250 ° Yttrium oxide (Y2O3) is then carried out mixed dissolution by nitrous acid (HNO2), then Yttrium Orthovanadate between 4-5 hour by temperature (YVO4) crystal, which is put into, is precipitated, and the process that reacts is added ammonium hydroxide and generates oxalic acid as YVO4 during reacting Solution concentration is higher, just will appear the hydrate of V2O5 when pH value is close to 2 or so, acid is added further at this time, this is heavy Form sediment again can the yttrium vfanadium compound that is generated under different pH values of dissolution vanadate again it is different, so needing to control well The pH value of the solution is made, because controlling the pH value of liquid during Yttrium Orthovanadate (YVO4) crystal production between 7.5-8.
As shown in Figure 1, being polished using Yttrium Orthovanadate (YVO4) polishing crystal machine to plane of crystal, Yttrium Orthovanadate (YVO4) crystal It is placed on glass slide and is placed on device side, be oriented by X-ray positioner, carried out again by diamond dresser Corase grinding and rough polishing, it is desirable that in profile control less than 0.25 λ, while the depth of parallelism is less than 0.05mm, then by being separated by solid-liquid separation, from The heart, washing and drying, then Yttrium Orthovanadate (YVO4) crystal after refined filtration by throwing, orienting in advance and cutting, before three It is repeated after operation three times, carries out interior inspection, specific process is to be located at first by the process and then secondary adjustment thrown in advance Crystal on slide glass, is then polished again, then again by orientation, when biggish deviation occurs in part, by cutting The mode cut carries out adjustment again to it and is thrown in advance again at this time, takes out the crystal thrown in advance at this time and passes through interior inspection, detection The preliminary situation of crystal.
As shown in Figure 1, Yttrium Orthovanadate (YVO4) crystal by interior inspection is thrown into after corase grinding repeatedly twice with essence again, reach It is required that after by essence inspection and plated film, by finally carrying out finished product packing, third before by cutting after Yttrium Orthovanadate (YVO4) crystal is directly simplified, directly into plated film and packing, further by single side polishing machine machine, to Yttrium Orthovanadate (YVO4) surface of crystal carries out smart throwing, while the reconditioning bottom sides of the long Yttrium Orthovanadate of lower shaft (YVO4) crystal of chip and side There is deviation and then secondary by corase grinding in top, while the required precision after reconditioning is less than 6 points, crystal after interior inspection Mode is adjusted, and is examined in corase grinding and then secondary progress for the first time, after its qualification, crystal is carried out smart throwing again, passed through Crystal after essence is thrown needs to carry out smart inspection again, and the crystal after essence is thrown passes through essence inspection, by later on the surface of crystal Plated film is carried out, after initially by cutting, can also directly carry out smart inspection, if can also can directly be plated by essence inspection Film, last Europe finished product inspection, passes through rear storage.

Claims (6)

1. a kind of yttrium vanadate crystal thin slice production technology, which is characterized in that including Yttrium Orthovanadate (YVO4) crystal growth, by metavanadic acid Ammonium (NH4VO3) solution is dissolved, and is purified by high temperature, then yttrium oxide (Y2O3) by nitrous acid (HNO2) into Row mixed dissolution is then put into Yttrium Orthovanadate (YVO4) crystal and is precipitated, and the process that reacts is added ammonium hydroxide and generates oxalic acid, connects By being separated by solid-liquid separation, centrifugation, washing and drying, then Yttrium Orthovanadate (YVO4) crystal after refined filtration by throwing in advance, it is fixed To and cutting, before three be repeated after operation three times, carry out in inspection, again by Yttrium Orthovanadate (YVO4) crystal of interior inspection Into after twice corase grinding repeatedly and essence throw, reach and pass through essence inspection and plated film after requirement, by finally carrying out finished product packing, again It is directly simplified by Yttrium Orthovanadate (YVO4) crystal after cutting before, directly into plated film and packing.
2. a kind of yttrium vanadate crystal thin slice production technology according to claim 1, which is characterized in that carried out in mixed liquor Heating, temperature pass through heating between 4-5 hour between 1000-1250 °.
3. a kind of yttrium vanadate crystal thin slice production technology according to claim 1, which is characterized in that use the Yttrium Orthovanadate (YVO4) polishing crystal machine polishes plane of crystal, and Yttrium Orthovanadate (YVO4) crystal is placed on glass slide and is placed on equipment Face is oriented by X-ray positioner, carries out corase grinding and rough polishing again by diamond dresser, it is desirable that in profile control Less than 0.25 λ, while the depth of parallelism is less than 0.05mm.
4. a kind of yttrium vanadate crystal thin slice production technology according to claim 1, which is characterized in that further pass through list Face polishing machine machine carries out smart throwing, while the long Yttrium Orthovanadate of lower shaft (YVO4) crystal of chip to the surface of Yttrium Orthovanadate (YVO4) crystal Reconditioning bottom sides and side top, while the required precision after reconditioning is less than 6 points.
5. a kind of yttrium vanadate crystal thin slice production technology according to claim 1, which is characterized in that at Yttrium Orthovanadate (YVO4) The pH value of liquid is controlled during crystal production between 7.5-8.
6. a kind of yttrium vanadate crystal thin slice production technology according to claim 1, which is characterized in that the ammonium metavanadate (NH4VO3) and the addition of yttrium oxide (Y2O3) proportion is 3 parts: 5 parts.
CN201910665129.7A 2019-07-23 2019-07-23 A kind of yttrium vanadate crystal thin slice production technology Pending CN110284194A (en)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002348196A (en) * 2001-05-30 2002-12-04 Shin Etsu Chem Co Ltd Rare earth vanadate single crystal and method for making the same
CN101649489A (en) * 2009-02-16 2010-02-17 上海元亮光电科技有限公司 Raw material synthesis method for growing yttrium vanadate crystal through pulling method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002348196A (en) * 2001-05-30 2002-12-04 Shin Etsu Chem Co Ltd Rare earth vanadate single crystal and method for making the same
CN101649489A (en) * 2009-02-16 2010-02-17 上海元亮光电科技有限公司 Raw material synthesis method for growing yttrium vanadate crystal through pulling method

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
吴世敏等: "《简明精细化工大辞典》", 30 June 1999, 辽宁科学技术出版社 *
夏金童等: "《常用建材化工日用品生产手册》", 31 July 1994, 江西科学技术出版社 *
陈冠荣等: "《化工百科全书 第2卷》", 31 December 1991, 化学工业出版社 *
陈家威等: "《简明化学辞典》", 31 July 1987, 湖北辞书出版社 *

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Application publication date: 20190927