CN110283379A - A kind of silane-crosslinkable semiconductive inner shield material and its production technology - Google Patents
A kind of silane-crosslinkable semiconductive inner shield material and its production technology Download PDFInfo
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- CN110283379A CN110283379A CN201910654622.9A CN201910654622A CN110283379A CN 110283379 A CN110283379 A CN 110283379A CN 201910654622 A CN201910654622 A CN 201910654622A CN 110283379 A CN110283379 A CN 110283379A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29B—PREPARATION OR PRETREATMENT OF THE MATERIAL TO BE SHAPED; MAKING GRANULES OR PREFORMS; RECOVERY OF PLASTICS OR OTHER CONSTITUENTS OF WASTE MATERIAL CONTAINING PLASTICS
- B29B9/00—Making granules
- B29B9/02—Making granules by dividing preformed material
- B29B9/06—Making granules by dividing preformed material in the form of filamentary material, e.g. combined with extrusion
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
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- B29B9/12—Making granules characterised by structure or composition
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- C08L23/00—Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers
- C08L23/02—Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers not modified by chemical after-treatment
- C08L23/04—Homopolymers or copolymers of ethene
- C08L23/08—Copolymers of ethene
- C08L23/0846—Copolymers of ethene with unsaturated hydrocarbons containing other atoms than carbon or hydrogen atoms
- C08L23/0853—Vinylacetate
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- C—CHEMISTRY; METALLURGY
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- C08L23/00—Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers
- C08L23/02—Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers not modified by chemical after-treatment
- C08L23/04—Homopolymers or copolymers of ethene
- C08L23/08—Copolymers of ethene
- C08L23/0846—Copolymers of ethene with unsaturated hydrocarbons containing other atoms than carbon or hydrogen atoms
- C08L23/0892—Copolymers of ethene with unsaturated hydrocarbons containing other atoms than carbon or hydrogen atoms containing monomers with other atoms than carbon, hydrogen or oxygen atoms
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- C08L2203/00—Applications
- C08L2203/20—Applications use in electrical or conductive gadgets
- C08L2203/202—Applications use in electrical or conductive gadgets use in electrical wires or wirecoating
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- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2205/00—Polymer mixtures characterised by other features
- C08L2205/02—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group
- C08L2205/025—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group containing two or more polymers of the same hierarchy C08L, and differing only in parameters such as density, comonomer content, molecular weight, structure
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- C—CHEMISTRY; METALLURGY
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- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2205/00—Polymer mixtures characterised by other features
- C08L2205/03—Polymer mixtures characterised by other features containing three or more polymers in a blend
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2312/00—Crosslinking
- C08L2312/08—Crosslinking by silane
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Abstract
The invention discloses a kind of silane-crosslinkable semiconductive inner shield material and its production technology, production craft step includes: to prepare highly conductive A material；Preparation catalysis B material；Highly conductive A material is mixed with catalysis B material and is extruded into mixture；Finished product is made in mixture progress warm water crosslinking.Ethylene vinyl silane copolymer warm water crosslinking is used in the manufacturing process of highly conductive A material of the invention; so being reacted without the Silane Grafted in traditional handicraft; reaction temperature is within 140 DEG C; burnt material is not generated; continuous production is good; stability is high; low energy consumption; ground continuous production can not be shut down; it is had excellent performance without periodically shutting down burnt material, manufactured CABLE MATERIALS mechanics and insulation performance semiconductive in cleaning equipment, is conducive to improve transmitting capacity of the electric wire netting; route wind loading rating is improved, the security reliability of distribution system is improved.
Description
Technical field
The present invention relates to CABLE MATERIALS more particularly to a kind of silane-crosslinkable semiconductive inner shield material and its production technologies.
Background technique
With the rapid development of the national economy, power network development is even more to advance by leaps and bounds, higher want is proposed to power supply reliability
It asks, for aerial insulated cable using more prevalent, shared route ratio is increasing.Using aerial insulated cable, be conducive to improve
Transmitting capacity of the electric wire netting improves route wind loading rating, improves the security reliability of distribution system, improves the power supply benefit of route
With rate；Be conducive to urban construction and greening work, reduce the pruning rate of trees along route, reduces trees and encounter conducting wire, cause
Line short, ground fault occur；Be conducive to high pressure and go deep into load center, reduce low-voltage circuit radius of electricity supply, improves voltage matter
Amount.In middle pressure aerial insulated cable, 10KV aerial insulated cable dosage is maximum, therefore, develops silane-crosslinkable semiconductive screen
Material is covered, it is great to have market prospects.The material of silane-crosslinkable shielding at present mostly uses greatly grafting A material and catalysis B to expect mixed form system
Standby silane-crosslinkable semiconductive shieldin material, A material preparation is peroxide initiation grafting silane reaction, and reaction temperature is higher, greatly
It is higher than 200 DEG C more, needs equipment temperature control high, in addition peroxide introducing can causes the burnt material of part resin crosslinking generation, need to periodically stop
In machine cleaning equipment the problems such as burnt material.
Summary of the invention
The object of the present invention is to provide a kind of simple process, high-efficient silane-crosslinkable semiconductive inner shield material and its life
Production. art.
Realizing the technical solution of the object of the invention is: a kind of production technology of silane-crosslinkable semiconductive inner shield material, step
Suddenly include:
S1: by weight, by 30~50 parts of ethylene-vinyl acetate copolymer, ethylene vinyl silane copolymer 41~
70 parts, 40~80 parts of highly conductive carbon black, 1~5 part of dispersing agent, 5~15 parts of lubricant, 0.2~2 part of antioxidant is mixed with height and leads
Electric A material；
S2: by 100 parts of ethylene-vinyl acetate copolymer；0.5~5 part of catalyst, 0.5~2 part of antioxidant is mixed with and urges
Change B material；Highly conductive A material is mixed with catalysis B material with the mass ratio of 7~10:1 and is extruded into mixture；
S3: finished product is made in mixture progress warm water crosslinking.
The mass ratio of highly conductive A material and catalysis B material is preferably 9~10:1 in the mixture.
The highly conductive A material is made up of reciprocating single-bolt extruder extruding pelletization；Reciprocal machine mandrel temperature 40~50
DEG C, 60~80 DEG C of an area, 80~100 DEG C of 2nd area, 100~120 DEG C of 3rd area, 30~40 DEG C of single screw rod mandrel temperature, an area 80~100
DEG C, 100~120 DEG C of 2nd area, 130~140 DEG C of head.
The catalysis B material is made up of double screw extruder granulation.
The ethylene-vinyl acetate copolymer, VA content is 15~30%, 190 DEG C, melt under 2.16kg test condition
Flow rate is 2~5g/10min；
The ethylene vinyl silane copolymer, vinyl silanes content are 0.5~5%.
The dispersing agent is at least one of EBS, TAS-2A.
The lubricant is at least one of polyethylene wax, EVA wax, white oil, stearate.
The antioxidant is antioxidant 1010, in antioxidant 1024, antioxidant 1076, irgasfos 168, antioxidant 300
It is at least one.
The catalyst is one of dibutyl tin dilaurate, Bis(lauroyloxy)dioctyltin, stannous octoate or more
Kind combination.
A kind of silane-crosslinkable semiconductive inner shield material, by the production work of above-mentioned silane-crosslinkable semiconductive inner shield material
Skill is made.
Using above-mentioned technical proposal, the present invention has the following beneficial effects:
(1) ethylene vinyl silane copolymer is used in the manufacturing process of highly conductive A of the invention material, so not passing
Silane Grafted reaction in technique of uniting, reaction temperature do not generate burnt material within 140 DEG C, and continuous production is good, and stability is high,
Low energy consumption, can not shut down ground continuous production, without periodically shutting down burnt material in cleaning equipment, manufactured CABLE MATERIALS mechanics and partly leads
Excellent electrical property is conducive to improve transmitting capacity of the electric wire netting, improves the security reliability of distribution system.
(2) accounting of ethylene vinyl silane copolymer of the invention is high, and the degree of cross linking increases, and intensity is higher, can meet
10KV aerial cable with inner shield material to tensile strength >=15MPa requirement, partly led using silane-crosslinkable of the invention by increase
The performance of electric inner shield material cable.
(3) when the mass ratio of highly conductive A of the invention material and catalysis B material is selected as 9~10:1, yield is higher, and stability is more
It is good.
(4) present invention produces highly conductive A material using reciprocating single-bolt extruder, and material is unique reciprocal by reciprocating engine
Motion mode is conveyed, and is sheared between mixing pins and irregular mixing screw block, melting effect is enhanced, is guaranteed
Mixing is more uniform, and temperature control is more accurate, the highly conductive A material performance of production is more stable, and has production rapidly, continuously
Advantage.
(5) present invention using double screw extruder squeeze out catalysis B material, have excellent charging performance, be kneaded plasticizing capacity,
Exhaust performance squeezes out stability, reduces production cost.
Specific embodiment
(embodiment 1)
The production technology of the silane-crosslinkable semiconductive inner shield material of the present embodiment, is expected using highly conductive A and catalysis B material is mixed
Amount to warm water crosslinking after squeezing.
In parts by weight, by 40 parts of ethylene-vinyl acetate copolymer, 60 parts of ethylene vinyl silane copolymer, highly conductive
60 parts of carbon black, 2 parts of EBS, 10 parts of white oil and 1 part of antioxidant 1010 enter reciprocating engine by self-measuring device, automatic blanking
Extruding pelletization prepares highly conductive A material in single screw rod.Reciprocal machine mandrel temperature 50 C, 70 DEG C of an area, 90 DEG C of 2nd area, 115 DEG C of 3rd area, it is single
40 DEG C of screw mandrel temperature, 90 DEG C of an area, 120 DEG C of 2nd area, 140 DEG C of head.
In parts by weight, by 100 parts of ethylene-vinyl acetate copolymer, 2 parts of dibutyl tin dilaurate and antioxidant 1010
0.8 part passes through self-measuring device, and automatic blanking enters mixing extrusion in twin-screw and is granulated preparation catalysis B material.
Highly conductive A is expected and be catalyzed that B material 9:1 in mass ratio is mixed, after extrusion molding, is crosslinked in about 90 DEG C of water, i.e.,
Obtain silane-crosslinkable semiconductive inner shield material product.
(embodiment 2)
The silane-crosslinkable semiconductive inner shield material and its production craft step of the present embodiment are as follows: in parts by weight, by second
50 parts of alkene-acetate ethylene copolymer, 50 parts of ethylene vinyl silane copolymer, 55 parts of highly conductive carbon black, 1 part of EBS, white oil 8
For part with 0.8 part of antioxidant 1010 by self-measuring device, it is high that automatic blanking enters extruding pelletization preparation in reciprocating engine single screw rod
Conductive A material.Reciprocal machine mandrel temperature 50 C, 70 DEG C of an area, 90 DEG C of 2nd area, 115 DEG C of 3rd area, 40 DEG C of single screw rod mandrel temperature, an area
90 DEG C, 120 DEG C of 2nd area, 140 DEG C of head.
In parts by weight, by 100 parts of ethylene-vinyl acetate copolymer, 1 part of dibutyl tin dilaurate, antioxidant 1010
1 part passes through self-measuring device, and automatic blanking enters mixing extrusion in twin-screw and is granulated preparation catalysis B material.
Highly conductive A is expected and be catalyzed that B material 9:1 in mass ratio is mixed, after extrusion molding, is crosslinked in about 90 DEG C of water, i.e.,
Obtain silane-crosslinkable semiconductive inner shield material product.
(embodiment 3)
The production craft step of the silane-crosslinkable semiconductive inner shield material of the present embodiment are as follows: in parts by weight, by ethylene-
50 parts of acetate ethylene copolymer, 40 parts of ethylene vinyl silane copolymer, 70 parts of highly conductive carbon black, 2 parts of EBS, 12 parts of white oil
With 1.2 parts of antioxidant 1010 by self-measuring device, automatic blanking, which enters extruding pelletization in reciprocating engine single screw rod and prepares height, is led
Electric A material.Reciprocal machine mandrel temperature 50 C, 70 DEG C of an area, 90 DEG C of 2nd area, 115 DEG C of 3rd area, 40 DEG C of single screw rod mandrel temperature, an area 90
DEG C, 120 DEG C of 2nd area, 140 DEG C of head.
In parts by weight, by 100 parts of ethylene-vinyl acetate copolymer, 3 parts of dibutyl tin dilaurate, antioxidant 1010
0.5 part passes through self-measuring device, and automatic blanking enters mixing extrusion in twin-screw and is granulated preparation catalysis B material.
Highly conductive A is expected and be catalyzed that B material 7:1 in mass ratio is mixed, after extrusion molding, is crosslinked in about 90 DEG C of water, i.e.,
Obtain silane-crosslinkable semiconductive inner shield material product.
(embodiment 4)
The production craft step of the silane-crosslinkable semiconductive inner shield material of the present embodiment are as follows: in parts by weight, by ethylene-
50 parts of acetate ethylene copolymer, 45 parts of ethylene vinyl silane copolymer, 70 parts of highly conductive carbon black, 2 parts of EBS, polyethylene wax 8
Part and 1,024 1 parts of antioxidant by self-measuring device, automatic blanking, which enters extruding pelletization in reciprocating engine single screw rod and prepares height, leads
Electric A material.Reciprocal machine mandrel temperature 50 C, 70 DEG C of an area, 90 DEG C of 2nd area, 115 DEG C of 3rd area, 40 DEG C of single screw rod mandrel temperature, an area 90
DEG C, 120 DEG C of 2nd area, 140 DEG C of head.
In parts by weight, by 100 parts of ethylene-vinyl acetate copolymer, 3 parts of Bis(lauroyloxy)dioctyltin, antioxidant
1024 0.5 parts pass through self-measuring device, and automatic blanking enters mixing extrusion in twin-screw and is granulated preparation catalysis B material.
Highly conductive A is expected and be catalyzed that B material 10:1 in mass ratio is mixed, after extrusion molding, is crosslinked in about 90 DEG C of water, i.e.,
Obtain silane-crosslinkable semiconductive inner shield material product.
(embodiment 5)
The production craft step of the silane-crosslinkable semiconductive inner shield material of the present embodiment are as follows: in parts by weight, by ethylene-
50 parts of acetate ethylene copolymer, 45 parts of ethylene vinyl silane copolymer, 70 parts of highly conductive carbon black, 2 parts of EBS, polyethylene wax 8
Part and 1,024 1 parts of antioxidant by self-measuring device, automatic blanking, which enters extruding pelletization in reciprocating engine single screw rod and prepares height, leads
Electric A material.Reciprocal machine mandrel temperature 50 C, 70 DEG C of an area, 90 DEG C of 2nd area, 115 DEG C of 3rd area, 40 DEG C of single screw rod mandrel temperature, an area 90
DEG C, 120 DEG C of 2nd area, 140 DEG C of head.
In parts by weight, by 100 parts of ethylene-vinyl acetate copolymer, 3 parts of Bis(lauroyloxy)dioctyltin, antioxidant
1024 0.5 parts pass through self-measuring device, and automatic blanking enters mixing extrusion in twin-screw and is granulated preparation catalysis B material.
Highly conductive A is expected and be catalyzed that B material 8:1 in mass ratio is mixed, after extrusion molding, is crosslinked in about 90 DEG C of water, i.e.,
Obtain silane-crosslinkable semiconductive inner shield material product.
(embodiment 6)
The production craft step of the silane-crosslinkable semiconductive inner shield material of the present embodiment are as follows: in parts by weight, by ethylene-
40 parts of acetate ethylene copolymer, 60 parts of ethylene vinyl silane copolymer, 60 parts of highly conductive carbon black, 2 parts of EBS, 10 parts of EVA wax
With 0.8 part of antioxidant 1076 by self-measuring device, automatic blanking, which enters extruding pelletization in reciprocating engine single screw rod and prepares height, is led
Electric A material.Reciprocal machine mandrel temperature 50 C, 70 DEG C of an area, 90 DEG C of 2nd area, 115 DEG C of 3rd area, 40 DEG C of single screw rod mandrel temperature, an area 90
DEG C, 120 DEG C of 2nd area, 140 DEG C of head.
In parts by weight, by 100 parts of ethylene-vinyl acetate copolymer, 3 parts of Bis(lauroyloxy)dioctyltin, antioxidant
1076 0.5 parts pass through self-measuring device, and automatic blanking enters mixing extrusion in twin-screw and is granulated preparation catalysis B material.
Highly conductive A is expected and be catalyzed that B material 9:1 in mass ratio is mixed, after extrusion molding, is crosslinked in about 90 DEG C of water, i.e.,
Obtain silane-crosslinkable semiconductive inner shield material product.
(embodiment 7)
The production craft step of the silane-crosslinkable semiconductive inner shield material of the present embodiment are as follows: in parts by weight, by ethylene-
50 parts of acetate ethylene copolymer, 50 parts of ethylene vinyl silane copolymer, 70 parts of highly conductive carbon black, 3 parts of TAS-2A, stearic acid
12 parts and 1 part of irgasfos 168 of salt pass through self-measuring device, and automatic blanking enters extruding pelletization in reciprocating engine single screw rod and prepares
Highly conductive A material.Reciprocal machine mandrel temperature 50 C, 70 DEG C of an area, 90 DEG C of 2nd area, 115 DEG C of 3rd area, 40 DEG C of single screw rod mandrel temperature, one
90 DEG C of area, 120 DEG C of 2nd area, 140 DEG C of head.
In parts by weight, by 100 parts of ethylene-vinyl acetate copolymer, 5 parts of stannous octoate, 1 part of irgasfos 168 by certainly
Dynamic metering device, automatic blanking enter mixing extrusion in twin-screw and are granulated preparation catalysis B material.
Highly conductive A is expected and be catalyzed that B material 9:1 in mass ratio is mixed, after extrusion molding, is crosslinked in about 90 DEG C of water, i.e.,
Obtain silane-crosslinkable semiconductive inner shield material product.
(embodiment 8)
The production craft step of the silane-crosslinkable semiconductive inner shield material of the present embodiment are as follows: in parts by weight, by ethylene-
50 parts of acetate ethylene copolymer, 50 parts of ethylene vinyl silane copolymer, 55 parts of highly conductive carbon black, 1 part of EBS, 8 parts of white oil and
1 part of antioxidant 300 enters extruding pelletization in reciprocating engine single screw rod and prepares highly conductive A by self-measuring device, automatic blanking
Material.Reciprocal machine mandrel temperature 50 C, 70 DEG C of an area, 90 DEG C of 2nd area, 115 DEG C of 3rd area, 40 DEG C of single screw rod mandrel temperature, 90 DEG C of an area, 2
120 DEG C of area, 140 DEG C of head.
In parts by weight, by 100 parts of ethylene-vinyl acetate copolymer, 1 part of dibutyl tin dilaurate, antioxidant 300 2
By self-measuring device, automatic blanking enters mixing extrusion granulation preparation catalysis B in twin-screw and expects part.
Highly conductive A is expected and be catalyzed that B material 9:1 in mass ratio is mixed, after extrusion molding, is crosslinked in about 90 DEG C of water, i.e.,
Obtain silane-crosslinkable semiconductive inner shield material product.
The properties of the silane-crosslinkable semiconductive inner shield material prepared by the present invention of table 1
Specific embodiment described above has carried out further in detail the purpose of the present invention, technical scheme and beneficial effects
Illustrate, it should be understood that the above is only a specific embodiment of the present invention, be not intended to restrict the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution, improvement and etc. done should be included in protection of the invention
Within the scope of.
Claims (9)
1. a kind of production technology of silane-crosslinkable semiconductive inner shield material, it is characterised in that step includes:
S1: by weight, by 30~50 parts of ethylene-vinyl acetate copolymer, ethylene vinyl silane copolymer 41~70
Part, 40~80 parts of highly conductive carbon black, 1~5 part of dispersing agent, 5~15 parts of lubricant, 0.2~2 part of antioxidant be mixed with it is highly conductive
A material；
S2: by 100 parts of ethylene-vinyl acetate copolymer；0.5~5 part of catalyst, 0.5~2 part of antioxidant is mixed with catalysis B
Material；Highly conductive A material is mixed with catalysis B material and is extruded into mixture；
S3: finished product is made in mixture progress warm water crosslinking.
2. a kind of production technology of silane-crosslinkable semiconductive inner shield material according to claim 1, it is characterised in that: institute
Stating the mass ratio of highly conductive A material and catalysis B material in mixture is 7~10:1.
3. a kind of production technology of silane-crosslinkable semiconductive inner shield material according to claim 1, it is characterised in that: institute
Highly conductive A material is stated to be made up of reciprocating single-bolt extruder extruding pelletization；Reciprocal 40~50 DEG C of machine mandrel's temperature, an area 60~
80 DEG C, 80~100 DEG C of 2nd area, 100~120 DEG C of 3rd area, 30~40 DEG C of single screw rod mandrel temperature, 80~100 DEG C of an area, 2 areas 100~
120 DEG C, 130~140 DEG C of head.
4. a kind of production technology of silane-crosslinkable semiconductive inner shield material according to claim 1, it is characterised in that: institute
Catalysis B material is stated to be made up of double screw extruder granulation.
5. a kind of production technology of silane-crosslinkable semiconductive inner shield material according to claim 1, it is characterised in that: institute
Stating dispersing agent is at least one of EBS, TAS-2A.
6. a kind of production technology of silane-crosslinkable semiconductive inner shield material according to claim 1, it is characterised in that: institute
Stating lubricant is at least one of polyethylene wax, EVA wax, white oil, stearate.
7. a kind of production technology of silane-crosslinkable semiconductive inner shield material according to claim 1, it is characterised in that: institute
Stating antioxidant is at least one of antioxidant 1010, antioxidant 1024, antioxidant 1076, irgasfos 168, antioxidant 300.
8. a kind of production technology of silane-crosslinkable semiconductive inner shield material according to claim 1, it is characterised in that: institute
Stating catalyst is one of dibutyl tin dilaurate, Bis(lauroyloxy)dioctyltin, stannous octoate or multiple combinations.
9. a kind of silane-crosslinkable semiconductive inner shield material, it is characterised in that: a kind of silicon as described in one of claim 1-8
The production technology of alkane cross-linking type semiconductive inner shield material is made.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112094454A (en) * | 2020-08-13 | 2020-12-18 | 江阴市海江高分子材料有限公司 | Silane self-crosslinking double-component internal shielding material for overhead cable |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112094454A (en) * | 2020-08-13 | 2020-12-18 | 江阴市海江高分子材料有限公司 | Silane self-crosslinking double-component internal shielding material for overhead cable |
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Application publication date: 20190927 |