CN110278390A - A kind of modified imaging sensor reading method - Google Patents
A kind of modified imaging sensor reading method Download PDFInfo
- Publication number
- CN110278390A CN110278390A CN201810212665.7A CN201810212665A CN110278390A CN 110278390 A CN110278390 A CN 110278390A CN 201810212665 A CN201810212665 A CN 201810212665A CN 110278390 A CN110278390 A CN 110278390A
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- column
- pixel
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- reading
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
- H04N25/44—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
Abstract
The invention discloses a kind of modified imaging sensors to read method, the specific method is as follows: pixel array includes n*m pixel, it include m row selection circuit and n column reading circuit, all public row selection circuit of every row pixel, all public column reading circuit of each column pixel；The present invention has rational design, not only reduces the valid pixel number of line direction half, but also reduces the noise of line direction, improves picture quality.Simultaneity factor also improves one times of reading speed (becoming to read two rows every time by reading a line every time), reduce the row selection circuit power consumption of half (the row selection circuit of half does not work), and also reduce the valid pixel number of column direction half, but the noise of column direction is also reduced, improve picture quality.Simultaneity factor reduces the column reading circuit power consumption of half (the column reading circuit of half does not work).
Description
Technical field
Present invention relates particularly to a kind of modified imaging sensors to read method.
Background technique
In view of imaging sensor is not necessarily required to that whole pixels all work in practical applications, such as 4000*
The image of 2000 modes needs 4000*2000 pixel operation, and only needs 1024*768 for the image of 1024*768 mode
A pixel operation.
General pattern sensor is that the information of each pixel is passed through peripheral reading circuit to read out when reading
Come, and the processing for carrying out data in the image processor (for example is directly reduced to 1024*768, Huo Zheqi by 4000*2000
His technology merges processing), since each pixel will be read, so read access time is very long, and data processing amount is big.It is right
It is all unfavorable in speed, power consumption etc..
In general pattern sensor periphery circuit design, all public row selection circuit of every row pixel, each column pixel is all
A public column reading circuit.As shown in Figure 1.When reading, read a line every time, the data value of the pixel unit of every row by pair
The column reading circuit answered is read.I.e. read access time is directly proportional with the number of row.
Summary of the invention
The purpose of the present invention is provide a kind of modified imaging sensor reading method to solve above-mentioned deficiency.
The purpose of the present invention is what is be achieved through the following technical solutions:
A kind of modified imaging sensor reading method, the specific method is as follows: pixel array includes n*m pixel, that is, is wrapped
Include m row selection circuit and n column reading circuit, all public row selection circuit of every row pixel, each column pixel all public one
A column reading circuit；It is provided with a switch on each row selection circuit, is provided with one between each adjacent two row selection circuit
A switching switch, can be realized 1 row selection circuit simultaneously connection 2 rows (perhaps L row) pixel unit and it is 1 remaining (or
L-1) it goes and circuit is selected to stop working, such 2 row pixel unit can be chosen simultaneously and at the same time reading, and each column reading circuit is read
Data value out is equal to the average value of the corresponding two rows pixel of the column, final the result is that every two rows pixel combination is at a line picture
Element；Each column reading circuit is both provided with a switch, and every two column, which are read, is provided with a switching switch, Neng Goushi between electricity
Existing 1 column reading circuit connects two column (perhaps K is arranged) pixel unit and 1 remaining (or K-1) column reading circuit simultaneously
It stops working, such 2 column pixel unit is chosen simultaneously and read by the same column reading circuit, and each reading circuit is read
Data value be equal to the average value of the corresponding two column pixel of the reading circuit, it is final the result is that every two column pixel combination is at one
Column pixel.
The present invention has following beneficial effect:
The present invention has rational design, not only reduces the valid pixel number of line direction half, but also reduces line direction
Noise, improve picture quality.The reading speed that simultaneity factor also improves one times (becomes to read every time by reading a line every time
Take two rows), the row selection circuit power consumption (the row selection circuit of half does not work) of half is reduced, and also reduce column direction
The valid pixel number of half, but the noise of column direction is also reduced, improve picture quality.Simultaneity factor reduces half
Column reading circuit power consumption (the column reading circuit of half does not work).
Detailed description of the invention
Fig. 1 is existing peripheral reading circuit structure；
Fig. 2 is that peripheral circuit of the invention reads structure.
Specific embodiment
The present invention will be further described below with reference to the drawings:
As shown in Fig. 2, a kind of modified imaging sensor reads method, the specific method is as follows: pixel array includes n*m
Pixel includes m row selection circuit and n column reading circuit, all public row selection circuit of every row pixel, each column pixel
An all public column reading circuit；A switch is provided on each row selection circuit, between each adjacent two row selection circuit
It is provided with a switching switch, 1 row selection circuit is can be realized while connecting 2 rows (or L row) pixel unit, and it is remaining
1 (or L-1) row selects circuit to stop working, and such 2 row pixel unit can be chosen simultaneously and at the same time reading, and each column is read
The data value that sense circuit is read is equal to the average value of the corresponding two rows pixel of the column, it is final the result is that every two rows pixel combination at
One-row pixels；Each column reading circuit is both provided with a switch, is provided with a switching between every two column reading electricity and opens
It closes, can be realized 1 column reading circuit and connect two column (perhaps K arrange) pixel units simultaneously and 1 remaining (or K-1 is a)
Column reading circuit stops working, and such 2 column pixel unit is chosen simultaneously and read by the same column reading circuit, each reading
The data value that sense circuit is read is equal to the average value of the corresponding two column pixel of the reading circuit, final the result is that every two column pixel
It is incorporated into a column pixel.
The present embodiment is closed using switch K1 and K3, and K2 is disconnected, and row selection circuit 1 works, and row selection circuit 2 stops work
Make；Switch K4 and K6 closure, K5 are disconnected, and column reading circuit 1 works, and column reading circuit 2 stops working.
The working method of the above ranks can be in any combination, it can while two rows and two column or a line two being chosen to arrange,
Perhaps two rows one arrange or each row and column individually read (K1, K2, K4, K5 closure, K3 and K6 are disconnected) as existing program.
Image sensor pixel cells periphery carries out the merging of signal as early as possible, rather than waits reading data to be over and arrive data again
It is handled in processor.Synthesis improves system frame frequency, improves picture quality, reduces power consumption.2 are equal to for K and L
The case where, it can actually be generalized to the situation of bigger number, but being equal to 2 is more commonly used demand, existing scheme is general
All realize in the image processor.
Read method is equivalent to the merging for having carried out pixel, thus to realize maximum pixel size image (such as
4000*2000), it is also necessary to which each row and column are individually read as existing program.And the figure for not needing maximum pixel size
As (such as 1024*768), this programme is particularly suitable for.
Claims (1)
1. a kind of modified imaging sensor reads method, it is characterised in that: the specific method is as follows: pixel array includes n*m
Pixel includes m row selection circuit and n column reading circuit, all public row selection circuit of every row pixel, each column pixel
An all public column reading circuit；A switch is provided on each row selection circuit, between each adjacent two row selection circuit
It is provided with a switching switch, 1 row selection circuit is can be realized while connecting 2 rows (or L row) pixel unit, and it is remaining
1 (or L-1) row selects circuit to stop working, and such 2 row pixel unit can be chosen simultaneously and at the same time reading, and each column is read
The data value that sense circuit is read is equal to the average value of the corresponding two rows pixel of the column, it is final the result is that every two rows pixel combination at
One-row pixels；Each column reading circuit is both provided with a switch, is provided with a switching between every two column reading electricity and opens
It closes, can be realized 1 column reading circuit and connect two column (perhaps K arrange) pixel units simultaneously and 1 remaining (or K-1 is a)
Column reading circuit stops working, and such 2 column pixel unit is chosen simultaneously and read by the same column reading circuit, each reading
The data value that sense circuit is read is equal to the average value of the corresponding two column pixel of the reading circuit, final the result is that every two column pixel
It is incorporated into a column pixel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810212665.7A CN110278390A (en) | 2018-03-15 | 2018-03-15 | A kind of modified imaging sensor reading method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810212665.7A CN110278390A (en) | 2018-03-15 | 2018-03-15 | A kind of modified imaging sensor reading method |
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| Publication Number | Publication Date |
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| CN110278390A true CN110278390A (en) | 2019-09-24 |
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| CN201810212665.7A Pending CN110278390A (en) | 2018-03-15 | 2018-03-15 | A kind of modified imaging sensor reading method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111246130A (en) * | 2020-01-16 | 2020-06-05 | 锐芯微电子股份有限公司 | Memory cell array, quantization circuit array and read control method thereof |
Citations (4)
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|---|---|---|---|---|
| CN1307366A (en) * | 2000-01-29 | 2001-08-08 | 全视技术有限公司 | Monolithic colour metal-oxide-semiconductor imaging sensor and adjacent line readout method |
| CN1591893A (en) * | 2003-06-04 | 2005-03-09 | 全视技术有限公司 | CMOS image sensor having high speed sub sampling |
| US20070177043A1 (en) * | 2006-02-01 | 2007-08-02 | Promax Technology (Hong Kong) Limited | Paired differential active pixel sensor |
| CN102209207A (en) * | 2010-03-30 | 2011-10-05 | 索尼公司 | Solid-state imaging device and imaging device |
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2018
- 2018-03-15 CN CN201810212665.7A patent/CN110278390A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1307366A (en) * | 2000-01-29 | 2001-08-08 | 全视技术有限公司 | Monolithic colour metal-oxide-semiconductor imaging sensor and adjacent line readout method |
| CN1591893A (en) * | 2003-06-04 | 2005-03-09 | 全视技术有限公司 | CMOS image sensor having high speed sub sampling |
| US20070177043A1 (en) * | 2006-02-01 | 2007-08-02 | Promax Technology (Hong Kong) Limited | Paired differential active pixel sensor |
| CN102209207A (en) * | 2010-03-30 | 2011-10-05 | 索尼公司 | Solid-state imaging device and imaging device |
Non-Patent Citations (1)
| Title |
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| 邱虹云，等: "1400 万像素 CMOS 传感器高速读出及信号采集的研究", 《红 外 技 术 》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111246130A (en) * | 2020-01-16 | 2020-06-05 | 锐芯微电子股份有限公司 | Memory cell array, quantization circuit array and read control method thereof |
| CN111246130B (en) * | 2020-01-16 | 2022-04-01 | 锐芯微电子股份有限公司 | Memory cell array, quantization circuit array and read control method thereof |
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Application publication date: 20190924 |
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