CN110277471A - Based on crystalline silicon N-type Poly emitter junction method for manufacturing solar battery - Google Patents
Based on crystalline silicon N-type Poly emitter junction method for manufacturing solar battery Download PDFInfo
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- CN110277471A CN110277471A CN201910414203.8A CN201910414203A CN110277471A CN 110277471 A CN110277471 A CN 110277471A CN 201910414203 A CN201910414203 A CN 201910414203A CN 110277471 A CN110277471 A CN 110277471A
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- 238000000034 method Methods 0.000 title claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 44
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 44
- 239000010703 silicon Substances 0.000 claims abstract description 44
- 230000008021 deposition Effects 0.000 claims abstract description 20
- 238000005498 polishing Methods 0.000 claims abstract description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 12
- 239000004411 aluminium Substances 0.000 claims abstract description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 8
- 238000005530 etching Methods 0.000 claims abstract description 8
- 150000004767 nitrides Chemical class 0.000 claims abstract description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 8
- 230000003647 oxidation Effects 0.000 claims abstract description 6
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 6
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 4
- 238000009792 diffusion process Methods 0.000 claims abstract description 4
- 238000012545 processing Methods 0.000 claims abstract description 4
- 238000007650 screen-printing Methods 0.000 claims abstract description 4
- 238000005422 blasting Methods 0.000 claims description 5
- 230000001795 light effect Effects 0.000 claims description 3
- 238000002310 reflectometry Methods 0.000 claims description 3
- 239000013078 crystal Substances 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 3
- 238000002360 preparation method Methods 0.000 abstract description 3
- 238000012827 research and development Methods 0.000 abstract description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 2
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 2
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention provides one kind to be based on crystalline silicon N-type Poly emitter junction method for manufacturing solar battery, comprising: carries out oxidation processes to the silicon wafer after polishing treatment and obtains oxide layer；Intrinsic layer is obtained to Poly layers of deposition are carried out after oxide deposition；Surface texturizing processing is carried out to intrinsic layer；The silicon wafer that surface texturizing obtains is diffused；Polishing is performed etching to the silicon wafer after diffusion；Backside oxide aluminium and nitride deposition are carried out to the silicon wafer after etching polishing；Front side silicon nitride siliceous deposits is carried out to the silicon wafer after backside oxide aluminium and nitride deposition；Fluting is carried out on the silicon wafer after front side silicon nitride siliceous deposits using corrosivity aluminium paste and forms back surface field；Silicon wafer after cross-notching and formation back surface field passes through positive silk-screen printing and forms front face.The present invention is by research and development high-efficiency battery preparation process, final to realize scale volume production effect to reduce battery production cost, can be produced using existing equipment, simple and effective, cost is controllable, can form high open circuit voltage crystal silicon cell.
Description
Technical field
The present invention relates to one kind to be based on crystalline silicon N-type Poly emitter junction method for manufacturing solar battery.
Background technique
With getting worse for global energy crisis, new energy is developed as one main class of current energy field
Topic.Solar energy is pollution-free with its, inexhaustible and without regional the features such as limiting as new energy development development a master
Want object.Carrying out photovoltaic power generation using solar cell is a current major way for utilizing solar energy.The load of solar battery
Body is crystal silicon chip, due to crystal silicon chip have the defects that it is different.
P-type solar battery is during the manufacturing of solar battery, and substantially about two emphasis, one is to mention
The photoelectric conversion efficiency of high solar battery, the other is reducing the production cost of solar battery.Currently, reducing solar-electricity
Pond cost has reached cheap internet access range, can only promote the photoelectric conversion of solar battery to further decrease production cost first
Efficiency.
Summary of the invention
The purpose of the present invention is to provide one kind to be based on crystalline silicon N-type Poly emitter junction method for manufacturing solar battery.
To solve the above problems, the present invention, which provides one kind, emits joint solar cell production side based on crystalline silicon N-type Poly
Method, comprising:
Silicon wafer is processed by shot blasting；
Oxidation processes are carried out to the silicon wafer after polishing treatment and obtain oxide layer；
Intrinsic layer is obtained to Poly layers of deposition are carried out after the oxide deposition；
Surface texturizing processing is carried out to the intrinsic layer, to increase sunken light effect；
The silicon wafer obtained to the surface texturizing is diffused；
Polishing is performed etching to the silicon wafer after diffusion；
Backside oxide aluminium and nitride deposition are carried out to the silicon wafer after etching polishing；
Front side silicon nitride siliceous deposits is carried out to the silicon wafer after backside oxide aluminium and nitride deposition；
Fluting is carried out on the silicon wafer after front side silicon nitride siliceous deposits using corrosivity aluminium paste and forms back surface field；
Silicon wafer after cross-notching and formation back surface field passes through positive silk-screen printing and forms front face.
Further, in the above-mentioned methods, in being processed by shot blasting to silicon wafer,
The reflectivity of silicon wafer after the polishing treatment is 35%-40%.
Further, in the above-mentioned methods, oxidation processes are carried out to the silicon wafer after polishing treatment to obtain in oxide layer,
The oxide layer with a thickness of≤2nm.
Further, in the above-mentioned methods, Poly layers of deposition of progress after the oxide deposition are obtained in intrinsic layer,
The intrinsic layer with a thickness of 500nm.
Compared with prior art, the present invention provides a kind of production methods of high-efficiency crystal silicon cell, and the present invention is directed to logical
Research and development high-efficiency battery preparation process is crossed, it is final to realize scale volume production effect to reduce battery production cost, it can be applied to scale
The high-efficiency battery process route of production can be produced using existing equipment, and technique cost itself and technical difficulty are lower than p-type
TOPCOn battery realizes that simple and effective, cost is controllable in terms of existing PERC battery process, can form high open circuit voltage crystal
Silion cell.
Detailed description of the invention
Fig. 1 is the process based on crystalline silicon N-type Poly emitter junction method for manufacturing solar battery of one embodiment of the invention
Figure.
Specific embodiment
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, with reference to the accompanying drawing and specific real
Applying mode, the present invention is described in further detail.
As shown in Figure 1, the present invention provides one kind based on crystalline silicon N-type Poly emitter junction method for manufacturing solar battery, packet
It includes:
Step S1, is processed by shot blasting silicon wafer；
Preferably, the reflectivity of the silicon wafer after the polishing treatment is 35%-40%；
Step S2 carries out oxidation processes to the silicon wafer after polishing treatment and obtains oxide layer；
Preferably, the oxide layer with a thickness of≤2nm；
Step S3 obtains intrinsic layer to Poly layers of deposition are carried out after the oxide deposition；
Preferably, the intrinsic layer with a thickness of 500nm；
Step S4 carries out surface texturizing processing to the intrinsic layer, to increase sunken light effect；
Step S5, the silicon wafer obtained to the surface texturizing are diffused；
Step S6 performs etching polishing to the silicon wafer after diffusion；
Step S7 carries out backside oxide aluminium and nitride deposition to the silicon wafer after etching polishing；
Step S8 carries out front side silicon nitride siliceous deposits to the silicon wafer after backside oxide aluminium and nitride deposition；
Step S9 is carried out fluting on the silicon wafer after front side silicon nitride siliceous deposits using corrosivity aluminium paste and forms back surface field；
Silicon wafer after step S10, cross-notching and formation back surface field passes through positive silk-screen printing and forms front face.
Here, the present invention is directed to efficient by research and development the present invention provides a kind of production method of high-efficiency crystal silicon cell
Battery preparation technique, it is final to realize scale volume production effect to reduce battery production cost, it can be applied to the efficient of large-scale production
Battery process route can be produced using existing equipment, and technique cost itself and technical difficulty are lower than p-type TOPCOn battery,
Realize that simple and effective, cost is controllable, can form high open circuit voltage crystal silicon cell in terms of existing PERC battery process.
Each embodiment in this specification is described in a progressive manner, the highlights of each of the examples are with other
The difference of embodiment, the same or similar parts in each embodiment may refer to each other.
Obviously, those skilled in the art can carry out various modification and variations without departing from spirit of the invention to invention
And range.If in this way, these modifications and changes of the present invention belong to the claims in the present invention and its equivalent technologies range it
Interior, then the invention is also intended to include including these modification and variations.
Claims (4)
1. one kind is based on crystalline silicon N-type Poly emitter junction method for manufacturing solar battery characterized by comprising
Silicon wafer is processed by shot blasting；
Oxidation processes are carried out to the silicon wafer after polishing treatment and obtain oxide layer；
Intrinsic layer is obtained to Poly layers of deposition are carried out after the oxide deposition；
Surface texturizing processing is carried out to the intrinsic layer, to increase sunken light effect；
The silicon wafer obtained to the surface texturizing is diffused；
Polishing is performed etching to the silicon wafer after diffusion；
Backside oxide aluminium and nitride deposition are carried out to the silicon wafer after etching polishing；
Front side silicon nitride siliceous deposits is carried out to the silicon wafer after backside oxide aluminium and nitride deposition；
Fluting is carried out on the silicon wafer after front side silicon nitride siliceous deposits using corrosivity aluminium paste and forms back surface field；
Silicon wafer after cross-notching and formation back surface field passes through positive silk-screen printing and forms front face.
2. being based on crystalline silicon N-type Poly emitter junction method for manufacturing solar battery as described in claim 1, which is characterized in that
In being processed by shot blasting to silicon wafer,
The reflectivity of silicon wafer after the polishing treatment is 35%-40%.
3. being based on crystalline silicon N-type Poly emitter junction method for manufacturing solar battery as described in claim 1, which is characterized in that
Oxidation processes are carried out to the silicon wafer after polishing treatment to obtain in oxide layer,
The oxide layer with a thickness of≤2nm.
4. being based on crystalline silicon N-type Poly emitter junction method for manufacturing solar battery as described in claim 1, which is characterized in that
It is obtained in intrinsic layer to Poly layers of deposition are carried out after the oxide deposition,
The intrinsic layer with a thickness of 500nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910414203.8A CN110277471A (en) | 2019-05-17 | 2019-05-17 | Based on crystalline silicon N-type Poly emitter junction method for manufacturing solar battery |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910414203.8A CN110277471A (en) | 2019-05-17 | 2019-05-17 | Based on crystalline silicon N-type Poly emitter junction method for manufacturing solar battery |
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| CN110277471A true CN110277471A (en) | 2019-09-24 |
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| CN201910414203.8A Pending CN110277471A (en) | 2019-05-17 | 2019-05-17 | Based on crystalline silicon N-type Poly emitter junction method for manufacturing solar battery |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111933752A (en) * | 2020-08-13 | 2020-11-13 | 浙江晶科能源有限公司 | Solar cell and preparation method thereof |
| CN115377252A (en) * | 2022-10-24 | 2022-11-22 | 英利能源发展(天津)有限公司 | Method for inhibiting polycrystalline silicon surface explosion film growth by PECVD method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150083215A1 (en) * | 2008-02-20 | 2015-03-26 | Sunpower Corporation | Front contact solar cell with formed emitter |
| CN107482079A (en) * | 2016-06-02 | 2017-12-15 | 上海神舟新能源发展有限公司 | Selective emitter junction and tunnel oxide high-efficiency N-type battery preparation method |
| CN109216499A (en) * | 2017-06-29 | 2019-01-15 | 上海神舟新能源发展有限公司 | Based single crystal PERC front side emitter knot tunnel oxide passivation cell preparation method |
-
2019
- 2019-05-17 CN CN201910414203.8A patent/CN110277471A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150083215A1 (en) * | 2008-02-20 | 2015-03-26 | Sunpower Corporation | Front contact solar cell with formed emitter |
| CN107482079A (en) * | 2016-06-02 | 2017-12-15 | 上海神舟新能源发展有限公司 | Selective emitter junction and tunnel oxide high-efficiency N-type battery preparation method |
| CN109216499A (en) * | 2017-06-29 | 2019-01-15 | 上海神舟新能源发展有限公司 | Based single crystal PERC front side emitter knot tunnel oxide passivation cell preparation method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111933752A (en) * | 2020-08-13 | 2020-11-13 | 浙江晶科能源有限公司 | Solar cell and preparation method thereof |
| CN115377252A (en) * | 2022-10-24 | 2022-11-22 | 英利能源发展(天津)有限公司 | Method for inhibiting polycrystalline silicon surface explosion film growth by PECVD method |
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Application publication date: 20190924 |
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