CN110265869B - Photonic crystal laser for display and imaging - Google Patents
Photonic crystal laser for display and imaging Download PDFInfo
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- CN110265869B CN110265869B CN201910573108.2A CN201910573108A CN110265869B CN 110265869 B CN110265869 B CN 110265869B CN 201910573108 A CN201910573108 A CN 201910573108A CN 110265869 B CN110265869 B CN 110265869B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1039—Details on the cavity length
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1042—Optical microcavities, e.g. cavity dimensions comparable to the wavelength
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/11—Comprising a photonic bandgap structure
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Abstract
A photonic crystal laser for display and imaging, comprising: a photonic crystal; a disk-shaped chaotic mode resonant cavity with the photonic crystal as a notch. The invention can overcome the bottleneck problem that the emergent light of a single cut disc cavity has no main direction due to supporting a plurality of chaotic modes, and realizes the disc-shaped photonic crystal laser with low coherence and high directivity so as to reduce and eliminate the speckle effect in laser display and imaging and have higher brightness.
Description
Technical Field
The invention relates to the technical field of semiconductor lasers, photonic crystal artificial microstructures and laser display and imaging, in particular to a photonic crystal laser for display and imaging.
Background
Laser has the characteristics of narrow emission line width, pure spectrum, high color gamut coverage rate, high saturation, long service life and the like, and the color gamut coverage reaches more than 90% of the color space which can be identified by human eyes, so that laser display is called as a new generation of display technology and is called as revolution in human visual history.
In laser display and imaging systems, a laser light source is one of essential key components, and the development of the laser display and imaging is restricted by the development of the laser light source. The laser light source has good space-time coherence. Good temporal coherence comes from good monochromaticity, which means large color gamut and high color purity, but also has the disadvantage that speckles and interference/diffraction fringes are easily generated. The existence of speckle seriously affects the uniformity of the illumination spot and the image display quality, and needs to be eliminated or reduced as much as possible.
Reducing the coherence of the light source is one of the main methods to suppress speckle, including reducing the temporal and spatial coherence of the light source. Some patents apply the method of broadening the spectral line of the laser source, and modulate the laser resonant cavity or cavity mirror to make the laser longitudinal mode change at any time, and acousto-optic coupling, parametric oscillation, ultra-short pulse increase the spectral line width, etc., which are relatively limited by the factors of bandwidth, cost, volume, etc. Although the contrast ratio of speckles is reduced to 3% by the latest chaotic cavity technology, the emergent directivity of laser is very poor, and an external optical fiber coupling test is required. The laser designed by the inventor can realize low coherence and high directional output without additional light path collimating devices or optical fibers.
Disclosure of Invention
Technical problem to be solved
In view of the above problems, the main object of the present invention is to design a simple, easily integrated, electrically injected, low coherence, high directivity photonic crystal laser, which solves the problem of speckle effect in laser display and imaging and the problem of large size of display and imaging system caused by introduced optical path speckle elimination system and the problem of poor directivity of low coherence semiconductor laser light source.
(II) technical scheme
The embodiment of the invention provides a photonic crystal laser for display and imaging, which comprises:
a photonic crystal;
a disk-shaped chaotic mode resonant cavity with the photonic crystal as a notch.
In some embodiments of the present invention, the radius of the chaotic mode resonant cavity is R, the distance D from the photonic crystal to the center of the chaotic mode resonant cavity, the radius of the photonic crystal unit is R, the period is D, the number of chaotic modes is determined by R and D, and the reflection and collimation wavelengths of the photonic crystal are determined by R and D.
In some embodiments of the invention, the photonic crystal is a tetragonal lattice, a hexagonal lattice, a dielectric pillar structure, or an air hole structure.
In some embodiments of the present invention, the directionality of the laser emission is adjusted by employing the operating frequency at and near the Dirac point at the photonic crystal.
In some embodiments of the present invention, the photonic crystal laser operates in a wavelength range from visible to near-mid-infrared.
The embodiment of the invention also provides a preparation method of the photonic crystal laser for displaying and imaging, which comprises the following steps:
a disc-shaped chaotic mode resonant cavity is prepared by taking the photonic crystal as a notch.
In some embodiments of the present invention, the chaotic mode resonant cavity and the photonic crystal adopt a deep etching process, and the etching depth is close to or exceeds the active region, so as to form effective restriction and regulation on the chaotic mode and prevent leakage loss of the side surface or the substrate.
In some embodiments of the present invention, the deep etching refers to performing smooth round cavity surface etching and photonic crystal notch etching on the chaotic mode resonant cavity.
In some embodiments of the present invention, a material of a feedback leakage field is also grown on the side of the chaotic mode resonant cavity, and the material of the feedback leakage field comprises silicon oxide, silicon nitride and gold.
In some embodiments of the present invention, an electrode is fabricated on the upper surface of the chaotic mode resonant cavity by means of electrical injection.
(III) advantageous effects
Compared with the prior art, the technical scheme of the invention has the following advantages that:
1. the invention can overcome the bottleneck problem that the emergent light of a single cut disc cavity has no main direction due to supporting a plurality of chaotic modes, and realize the disc-shaped photonic crystal laser with low coherence and high directivity so as to reduce and eliminate the speckle effect in laser display and imaging and have higher brightness;
2. the photonic crystal laser for displaying and imaging is composed of the notch disc and the photonic crystal, reflection of light with different incident angles by the photonic crystal is equivalent to the cavity surface of the notch disc resonant cavity, multiple laser shots in a chaotic mode are supported, and coherence of laser is reduced;
3. the invention utilizes Dirac points at the photonic crystal and the working frequency near the Dirac points, has large reflection even can reach total reflection for light which is not vertically incident, and has high directivity for the partial reflection and partial transmission of the light which is vertically incident;
4. the invention does not need additional light path collimating devices or optical fibers, has the integral scale of dozens of microns, and has potential application value for developing speckle-free on-chip integrated display and imaging light source chips.
Drawings
FIG. 1 is a schematic diagram of a low coherence high directivity photonic crystal laser designed for display and imaging in accordance with the present invention;
FIG. 2 is the resonance spectrum (7 nm full width at half maximum) of a low coherence high directivity photonic crystal laser designed for display and imaging according to the present invention;
FIG. 3 is a 625nm mode field distribution diagram of a low coherence high directivity photonic crystal laser designed for display and imaging according to the present invention;
FIG. 4 is a 620nm mode field distribution diagram of a low coherence high directivity photonic crystal laser designed for display and imaging according to the present invention;
FIG. 5 is a diagram of mode field distribution of 627nm wavelength of a low coherence high directivity photonic crystal laser designed for display and imaging according to the present invention;
FIG. 6 is a diagram showing the intensity distribution of the mode field at 625nm wavelength of a low-coherence high-directivity photonic crystal laser designed according to the present invention at different horizontal positions, (1) 3 microns, (2) 7 microns;
FIG. 7 is a diagram of the light intensity distribution of 620nm mode field at different horizontal positions of a low coherence high directivity photonic crystal laser designed for display and imaging according to the present invention, (1) 3 microns, (2) 7 microns;
FIG. 8 is the light intensity distribution diagram of mode field at different horizontal positions of 627nm wavelength of low coherence and high directivity photonic crystal laser designed for display and imaging according to the present invention, wherein (1) is 3 microns, and (2) is 7 microns.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to specific embodiments and the accompanying drawings.
Fig. 1 is a schematic structural diagram of a low-coherence high-directivity photonic crystal laser for display and imaging designed according to the present invention, as shown in fig. 1, the photonic crystal laser includes: a photonic crystal; a disk-shaped chaotic mode resonant cavity with the photonic crystal as a notch. The photonic crystal acts as a reflector and collimator at the cut. The radius of the disc is R, the distance from the notch to the circle center is D, the photonic crystal at the notch is a periodic dielectric column structure arranged according to a square lattice, the radius is R, and the period is D. The material is the same as that of the disc, and the wafer can be manufactured by electron beam exposure and inductively coupled plasma etching. In the embodiment of the present invention, the unset parameters are R ═ 10 μm, D ═ 8.4 μm, R ═ 68.7nm, D ═ 343.5nm, and the refractive index of the material is n ═ 3.536, which can be adjusted in other embodiments according to actual circumstances.
The photonic crystal can be a tetragonal lattice, a hexagonal lattice, a dielectric column structure or an air hole structure, and can be selected according to actual conditions.
The outgoing directivity of the laser generated by the photonic crystal laser changes according to the Dirac point at the photonic crystal and the frequency change nearby, that is, the outgoing directivity of the laser can be adjusted by adopting the Dirac point at the photonic crystal and the working frequency nearby, so that the improvement effect is achieved. And the working wavelength range of the photonic crystal laser is from visible light to near-middle infrared.
The photonic crystal laser can adopt a multi-quantum well or a single quantum well as an active region, and the active material is not particularly limited.
The embodiment of the invention also provides a preparation method of the photonic crystal laser for displaying and imaging, which comprises the following steps:
a disc-shaped chaotic mode resonant cavity is prepared by taking the photonic crystal as a notch.
The chaotic mode resonant cavity and the photonic crystal can adopt a deep etching process, and the etching depth is close to or exceeds the active region, so that the chaotic mode is effectively restrained and regulated, and the leakage loss of the side surface or the substrate is prevented. The deep etching refers to smooth circular cavity surface etching and photonic crystal notch etching in the chaotic mode resonant cavity.
It should also be noted that materials of feedback leakage field can also be grown on the side of the chaotic mode resonant cavity, and the materials of the feedback leakage field include, but are not limited to, silicon oxide, silicon nitride and gold.
In some embodiments of the present invention, an electrode may be fabricated on the upper surface of the chaotic mode resonant cavity by means of electrical injection.
Fig. 2 shows the resonance spectrum (7 nm full width at half maximum) of a low coherence and high directivity photonic crystal laser designed according to the present invention, which is only reduced by 1nm (8 nm full width at half maximum calculated) at the same central operating wavelength (625nm) compared to a single notched disk resonant cavity, although the number of chaotic modes supported by the designed laser structure is slightly reduced, the low coherence is still maintained.
FIG. 3 is a model field distribution diagram of a low coherence and high directivity photonic crystal laser with a wavelength of 625nm for display and imaging, which shows a typical chaotic model field distribution in a notched disc resonator because the photonic crystal has large reflection even can reach total reflection for light with non-vertical incidence; a large-range leakage field is arranged around the notch disc resonant cavity, which reflects the essential characteristic that the chaotic mode lacks a main direction, can be improved by smooth circular cavity surface etching, and can also be used for growing feedback leakage fields such as silicon oxide or silicon nitride, gold and the like on the side surface; while for normally incident light the light is partially reflected and partially transmitted and thus has a natural collimating effect on the light exiting the photonic crystal, which acts as both a reflector and a collimator.
Fig. 4 is a mode field distribution diagram of 620nm wavelength of a low-coherence high-directivity photonic crystal laser designed for displaying and imaging according to the present invention, and fig. 5 is a mode field distribution diagram of 627nm wavelength of a low-coherence high-directivity photonic crystal laser designed for displaying and imaging according to the present invention, as shown in fig. 4 and fig. 5, the two modes are at boundary wavelength of half width of resonance spectrum, and the photonic crystal still has good collimation effect on output light.
Fig. 6, fig. 7 and fig. 8 show the light intensity distribution of the mode fields of 625nm, 620nm and 627nm wavelength of the photonic crystal laser with low coherence and high directivity at the positions of 3um and 7um respectively for displaying and imaging, so as to judge the collimation directivity of the output laser of the photonic crystal. The ordinate Y represents the position coordinate in the vertical direction, which is the same as the ordinate Z of the mode field distribution diagram (fig. 3, 4 and 5), and the abscissa represents the relative light intensity. With the evolution of the abscissa X in the range from 3um to 7um in the mode field distribution diagram, the mode light field collimation characteristic of the center wavelength of 625nm is the best, and the vertical azimuth difference of the maximum light intensity point in correspondence table 1 (a table of the azimuth difference and the relative intensity difference of the maximum light intensity point of the low-coherence high-directivity photonic crystal laser for displaying and imaging designed by the invention) is 0, i.e. the maximum light intensity point has no offset in the vertical direction, and the relative intensity difference of the light intensity is only 0.001, so that the laser output has high directivity. The mode light field collimation characteristics of the central wavelengths 627nm and 620nm are inferior, because the vertical azimuth difference corresponding to the maximum point of the light intensity in table 1 is 0.159 and 0.237, respectively.
TABLE 1
In summary, the photonic crystal laser for display and imaging and the preparation method thereof provided by the invention have the advantages that the photonic crystal is used as the notch to prepare the disk-shaped chaotic mode resonant cavity, the bottleneck problem that the outgoing direction is not dominant because the single notch disk cavity supports a plurality of chaotic modes can be solved, the disk-shaped photonic crystal laser with low coherence and high directivity is realized, the speckle effect in laser display and imaging is reduced and eliminated, and meanwhile, the brightness is high.
The above-mentioned embodiments are intended to illustrate the objects, aspects and advantages of the present invention, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention, and are not intended to limit the present invention, and any modifications, equivalent substitutions, improvements, etc. made within the spirit and principle of the present invention should be included in the scope of the present invention.
Unless otherwise indicated, the numerical parameters set forth in the specification and attached claims are approximations that can vary depending upon the desired properties sought to be obtained by the present invention. In particular, all numbers expressing quantities of ingredients, reaction conditions, and so forth used in the specification and claims are to be understood as being modified in all instances by the term "about". Generally, the expression is meant to encompass variations of ± 10% in some embodiments, 5% in some embodiments, 1% in some embodiments, 0.5% in some embodiments by the specified amount.
Furthermore, "comprising" does not exclude the presence of elements or steps not listed in a claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements.
The use of ordinal numbers such as "first," "second," "third," etc., in the specification and claims to modify a corresponding element does not by itself connote any ordinal number of the element or any ordering of one element from another or the order of manufacture, and the use of the ordinal numbers is only used to distinguish one element having a certain name from another element having a same name.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention, and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (9)
1. A photonic crystal laser for display and imaging, comprising:
a photonic crystal;
a disc-shaped chaotic mode resonant cavity with the photonic crystal as a notch;
the directivity of laser emission is adjusted by using the operating frequency at and near the Dirac point at the photonic crystal.
2. The photonic crystal laser for display and imaging as claimed in claim 1, wherein the chaotic mode resonant cavity has a radius R, the distance D from the photonic crystal to the center of the chaotic mode resonant cavity, the photonic crystal unit radius R, the period D, the number of chaotic modes determined by R and D, and the reflection and collimation wavelengths of the photonic crystal determined by R and D.
3. The photonic crystal laser for display and imaging of claim 1, wherein the photonic crystal is a tetragonal lattice, hexagonal lattice, dielectric pillar structure, or air hole structure.
4. A photonic crystal laser for display and imaging as in claim 1, wherein the photonic crystal laser operates in a wavelength range from visible to near-mid infrared.
5. A method for preparing a photonic crystal laser for display and imaging, comprising:
preparing a disc-shaped chaotic mode resonant cavity by taking the photonic crystal as a notch;
wherein, the laser emitting directivity generated by the photonic crystal laser changes according to the Dirac point and the frequency change nearby.
6. The method for fabricating a photonic crystal laser for display and imaging as claimed in claim 5, wherein the chaotic mode resonant cavity and the photonic crystal are etched deep to a depth close to or exceeding the active region to form effective confinement and regulation of the chaotic mode and prevent leakage loss from the side or the substrate.
7. The method for manufacturing a photonic crystal laser for displaying and imaging according to claim 6, wherein the deep etching refers to performing smooth circular cavity surface etching and photonic crystal notch etching on the chaotic mode resonant cavity.
8. The method of fabricating a photonic crystal laser for display and imaging as claimed in claim 5, wherein a feedback leakage field material is further grown on the side of the chaotic mode resonant cavity, the feedback leakage field material comprising silicon oxide, silicon nitride and gold.
9. The method of fabricating a photonic crystal laser for display and imaging as claimed in claim 5, wherein an electrode is fabricated on the upper surface of the chaotic mode resonant cavity by means of electrical injection.
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| CN114389143B (en) * | 2020-10-20 | 2023-12-29 | 中国科学院半导体研究所 | Coherence-tunable semiconductor laser and application |
| WO2022082411A1 (en) * | 2020-10-20 | 2022-04-28 | 中国科学院半导体研究所 | Coherence-adjustable semiconductor laser device and use thereof |
| CN113259002A (en) * | 2021-05-13 | 2021-08-13 | 太原理工大学 | Infrared chaotic laser secret communication method in free space and communication system thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1877933A (en) * | 2005-06-09 | 2006-12-13 | 中国科学院半导体研究所 | Ridge waveguide and two-D photonic crystal combined silicon-base Raman laser structure |
| CN101335426A (en) * | 2007-06-25 | 2008-12-31 | 中国科学院上海微系统与信息技术研究所 | Photonic crystal self-calibration laser |
| CN101867148A (en) * | 2009-04-15 | 2010-10-20 | 中国科学院半导体研究所 | FP (Fabry-Perot) cavity laser with reflecting surfaces of photonic crystals and vertical emergent surface |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20180109325A1 (en) * | 2016-02-10 | 2018-04-19 | Washington University | Opto-mechanical system and method having chaos induced stochastic resonance and opto-mechanically mediated chaos transfer |
| US8848756B2 (en) * | 2011-09-16 | 2014-09-30 | Samsung Electronics Co., Ltd. | Surface plasmon laser |
-
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1877933A (en) * | 2005-06-09 | 2006-12-13 | 中国科学院半导体研究所 | Ridge waveguide and two-D photonic crystal combined silicon-base Raman laser structure |
| CN101335426A (en) * | 2007-06-25 | 2008-12-31 | 中国科学院上海微系统与信息技术研究所 | Photonic crystal self-calibration laser |
| CN101867148A (en) * | 2009-04-15 | 2010-10-20 | 中国科学院半导体研究所 | FP (Fabry-Perot) cavity laser with reflecting surfaces of photonic crystals and vertical emergent surface |
Non-Patent Citations (3)
| Title |
|---|
| Low spatial coherence electrically pumped semiconductor laser for speckle-free full-field imaging;Brandon Redding等;《PNAS》;20150203;第112卷(第5（2015）期);第1304-1309页 * |
| Wide-angle emission and single-mode deformed circular microlasers with a flat side;Jian-Dong Lin等;《Applied Optics》;20120610;第51卷(第17（2012）期);第3930-3935页 * |
| 光子晶体中基于有效折射率接近零的光束准直出射;赵浩等;《物理学报》;20141231;第63卷(第17期);第174204-1至5页 * |
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