CN110265492A - A kind of mode two waveband mercury-cadmium tellurid detector simultaneously - Google Patents
A kind of mode two waveband mercury-cadmium tellurid detector simultaneously Download PDFInfo
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- CN110265492A CN110265492A CN201910414304.5A CN201910414304A CN110265492A CN 110265492 A CN110265492 A CN 110265492A CN 201910414304 A CN201910414304 A CN 201910414304A CN 110265492 A CN110265492 A CN 110265492A
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- cadmium telluride
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- mercury cadmium
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- DGJPPCSCQOIWCP-UHFFFAOYSA-N cadmium mercury Chemical compound [Cd].[Hg] DGJPPCSCQOIWCP-UHFFFAOYSA-N 0.000 title claims abstract description 19
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 claims abstract description 85
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 claims abstract description 82
- 239000002184 metal Substances 0.000 claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims abstract description 15
- 238000002161 passivation Methods 0.000 claims abstract description 15
- 239000005083 Zinc sulfide Substances 0.000 claims description 22
- 229910052738 indium Inorganic materials 0.000 claims description 21
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 21
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 20
- 230000004888 barrier function Effects 0.000 claims description 17
- 229910052718 tin Inorganic materials 0.000 claims description 13
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 12
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 9
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 229910052714 tellurium Inorganic materials 0.000 claims description 5
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 5
- 238000000605 extraction Methods 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000004073 vulcanization Methods 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 239000011701 zinc Substances 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract description 9
- 230000031700 light absorption Effects 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229910052753 mercury Inorganic materials 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
- H01L31/02966—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe including ternary compounds, e.g. HgCdTe
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/1013—Devices sensitive to infrared, visible or ultraviolet radiation devices sensitive to two or more wavelengths, e.g. multi-spectrum radiation detection devices
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors
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Abstract
The invention discloses a kind of mode two waveband mercury-cadmium tellurid detectors simultaneously, etching depth in device fabrication process can be made to become smaller by reducing mercury cadmium telluride long wave thickness degree, because mercury cadmium telluride long wave layer side wall has a certain slope after etching, reduce etching depth can reduce pixel center away from.Reduction mercury cadmium telluride long wave thickness degree will lead to light absorption and tail off, and grows metal layer on the passivation layer and is conducive to reflection electromagnetic wave to improve the light absorption of mercury cadmium telluride long wave layer, ensure that good light absorption while reducing mercury cadmium telluride long wave thickness and spending.
Description
Technical field
The present invention relates to cadmium-telluride-mercury infrared detector technologies, and in particular to the design and preparation of two waveband mercury-cadmium tellurid detector
Technology.
Background technique
Third generation HgCdTe infrared focal plane detector has the characteristics that large area array, multicolor, integrated.Two waveband mercury cadmium telluride
The infrared detector place different from single band device is its ability with two wave bands of detection.Two waveband mercury cadmium telluride
It is generally made of medium wave layer, barrier layer and long wave layer, barrier layer is in order in separating, between long wave layer as the purpose of barrier layer
Minority carrier, thus partition in, the photo-signal between long wave layer.The growth of general mercury cadmium telluride is complete in layer
Covering growth, cannot be directly with hierarchic structure shown in FIG. 1 growth, therefore corruption is needed on the basis of two waveband mercury cadmium telluride
Lose or etch medium wave layer signal window.Due to unfavorable factors such as wet etching anisotropy, uniformity differences, it is not able to satisfy height
The small pixel center of density away from two waveband cadmium-telluride-mercury infrared detector preparation.See Srivastav, V.Pal, R.Vyas,
H.P.,“Overview of etching technologies used for HgCdTe”,Opto-Electronics
Review,Vol.13,2005,p197-211.Metal electrode contact resistance generally in ten Europe magnitudes, is shown in Hu Xiaoning, Zhao Jun, " Au/
The Ohmic contact of Sn and p-HgCdTe ", infrared and millimeter wave journal, Vol.5,1998, p397-400.It is carved using plasma dry
Erosion, can be formed compared with high-aspect-ratio etch as a result, but etched sidewall still there is certain gradient, such as Fig. 2.In view of in fixation
Depth-to-width ratio under, that is, under the fixed gradient, mercury cadmium telluride long wave layer is thicker, then long wave layer material surface operation space is got over
Small therefore relatively thin long wave thickness degree be conducive to improve pixel area, reduce pixel center away from.Reducing long wave thickness degree will cause
The absorption of LONG WAVE INFRARED dies down, therefore increases reflective metal layer on long wave layer and the light absorption of long wave layer can be improved, and makes up thickness
Reduce bring loss.
Summary of the invention
Mould while the invention proposes one kind by reducing 3 thickness of p-type mercury cadmium telluride long wave layer and increasing reflective metal layer 6
Formula two waveband mercury-cadmium tellurid detector structure.Including p-type mercury cadmium telluride medium wave layer 1, p-type mercury cadmium telluride barrier layer 2, p-type mercury cadmium telluride long wave
Floor 3, mercury cadmium telluride long wave floor adulterate the area n 4, passivation layer 5, metal layer 6, zinc sulfide layer 7, long wave indium column 8, medium wave indium column 9, common electrical
Pole indium column 10 and mercury cadmium telluride medium wave floor adulterate the area n 11, it is characterised in that:
Overall structure description: such as Fig. 1, this chip includes p-type mercury cadmium telluride medium wave layer 1, p-type mercury cadmium telluride barrier layer 2, p-type tellurium
Cadmium mercury long wave floor 3, the mercury cadmium telluride long wave floor doping area n 4, passivation layer 5, metal layer 6, zinc sulfide layer 7, indium column 8 and mercury cadmium telluride medium wave
Floor adulterates the area n 11.
Further design feature description: mercury cadmium telluride medium wave layer is obtained by conventional doping in 1 side of p-type mercury cadmium telluride medium wave layer
The area n 11 is adulterated, the photosensitive member of medium wave layer pn-junction is formed；There is 2 He of p-type mercury cadmium telluride barrier layer on 1 other side of p-type mercury cadmium telluride medium wave layer
P-type mercury cadmium telluride long wave layer 3 obtains mercury cadmium telluride long wave floor by conventional doping on p-type mercury cadmium telluride long wave floor 3 and adulterates the area n 4, shape
At the photosensitive member of long wave layer pn-junction；Growth of passivation layer 5, metal layer 6 on p-type mercury cadmium telluride medium wave layer 1 and p-type mercury cadmium telluride long wave layer 3
With zinc sulfide layer 7, long wave indium column 8, medium wave indium column 9, public electrode indium column 10 are signal extraction electrode；P-type mercury cadmium telluride medium wave layer 1
Thickness is between 5 μm to 8 μm；2 thickness of p-type mercury cadmium telluride barrier layer is between 1 μm to 2 μm；3 thickness of p-type mercury cadmium telluride long wave layer exists
Between 2.5 μm to 4 μm；Mercury cadmium telluride long wave floor adulterate the area n 4 and mercury cadmium telluride medium wave floor doping 11 thickness of the area n 1 μm to 1.5 μm it
Between；Passivation layer 5 is made of cadmium telluride and zinc sulphide, first covers cadmium telluride, then cover zinc sulphide, and cadmium telluride thickness is arrived in 100nm
Between 200nm, zinc sulphide thickness is between 100nm to 200nm；Metal layer 6 first covers tin by tin and Jin Zucheng, then covers gold,
Tin thickness is between 20nm to 40nm, and Jin Houdu is between 60nm to 120nm；Zinc sulfide layer 7 is made of zinc sulphide, and thickness exists
Between 100nm to 300nm；Metal layer 6 first covers tin by tin and Jin Zucheng, then covers gold, tin thickness 20nm to 40nm it
Between, Jin Houdu is between 60nm to 120nm；Zinc sulfide layer 7 is made of zinc sulphide, and thickness is between 100nm to 300nm.
Working principle: p-type mercury cadmium telluride barrier layer 2 is used as barrier layer by p-type mercury cadmium telluride medium wave layer 1 and p-type mercury cadmium telluride long wave
Layer 3 minority carriers partition.Long wave layer pn-junction absorbs LONG WAVE INFRARED signal and draws electric signal and the absorption of medium wave layer pn-junction by indium column 8
Medium-wave infrared signal draws electric signal by indium column 9, the purpose realized while detected.It can be made by reducing mercury cadmium telluride long wave thickness degree
Etching depth becomes smaller in device fabrication process, and reduction mercury cadmium telluride long wave thickness degree will lead to light absorption and tail off, and gives birth on the passivation layer
Long metal layer is conducive to reflection electromagnetic wave to improve the light absorption of mercury cadmium telluride long wave layer, is reducing mercury cadmium telluride long wave thickness degree
It ensure that good light absorption simultaneously.
The invention has the advantages that: etching depth in device fabrication process can be made to become by reducing mercury cadmium telluride long wave thickness degree
Small, because mercury cadmium telluride long wave layer side wall has certain slope after etching, pixel center can be reduced away from together by reducing etching depth
When increase reflective metal layer on mercury cadmium telluride long wave layer the light absorption of long wave layer can be improved, make up thickness and reduce bring loss.
Detailed description of the invention
Fig. 1 is while mode two waveband mercury-cadmium tellurid detector structural schematic diagram, wherein 1 being p-type mercury cadmium telluride medium wave layer, 2 being p
Type mercury cadmium telluride barrier layer, 3 be p-type mercury cadmium telluride long wave floor, 4 be mercury cadmium telluride long wave floor doping the area n, 5 be passivation layer, 6 be metal layer,
7 be zinc sulfide layer, 8 be long wave indium column, 9 be medium wave indium column, 10 be public electrode indium column and 11 be mercury cadmium telluride medium wave layer doping n
Area.
Fig. 2 is long wave layer sidewall slopes schematic diagram after etching, wherein 1 being p-type mercury cadmium telluride medium wave layer, 2 being p-type mercury cadmium telluride gesture
Barrier layer, 3 are p-type mercury cadmium telluride long wave layer.
Specific embodiment
Embodiment 1
1) on p-type mercury cadmium telluride by ion implanting formed in, long wave layer pn-junction, 1 μm of the area n thickness, wherein p-type mercury cadmium telluride
5 μm of medium wave layer, 2 μm of p-type mercury cadmium telluride barrier layer, 2.5 μm of layer of p-type mercury cadmium telluride long wave；
2) 100nm cadmium telluride passivation layer is grown on mercury cadmium telluride surface；
3) tin of 20nm, the gold of regrowth 60nm are first grown；
4) zinc sulphide of 100nm is grown；
5) indium column is grown.
Embodiment 2
1) on p-type mercury cadmium telluride by ion implanting formed in, long wave layer pn-junction, 1.25 μm of the area n thickness, wherein p-type tellurium
7 μm of cadmium mercury medium wave layer, 1.5 μm of p-type mercury cadmium telluride barrier layer, 3 μm of layer of p-type mercury cadmium telluride long wave；
2) 100nm cadmium telluride passivation layer, regrowth 100nm zinc sulphide passivation layer are grown on mercury cadmium telluride surface；
3) tin of 30nm, the gold of regrowth 100nm are first grown；
4) zinc sulphide of 200nm is grown；
5) indium column is grown.
Embodiment 3
1) on p-type mercury cadmium telluride by ion implanting formed in, long wave layer pn-junction, 1.5 μm of the area n thickness, wherein p-type tellurium cadmium
8 μm of mercury medium wave layer, 1 μm of p-type mercury cadmium telluride barrier layer, 4 μm of layer of p-type mercury cadmium telluride long wave；
2) 200nm cadmium telluride passivation layer, regrowth 200nm zinc sulphide passivation layer are grown on mercury cadmium telluride surface；
3) tin of 40nm, the gold of regrowth 120nm are first grown；
4) zinc sulphide of 300nm is grown；
Grow indium column.
Claims (9)
1. a kind of mode two waveband mercury-cadmium tellurid detector, including p-type mercury cadmium telluride medium wave layer (1), p-type mercury cadmium telluride barrier layer simultaneously
(2), p-type mercury cadmium telluride long wave floor (3), mercury cadmium telluride long wave floor adulterate the area n (4), passivation layer (5), metal layer (6), zinc sulfide layer
(7), long wave indium column (8), medium wave indium column (9), public electrode indium column (10) and the mercury cadmium telluride medium wave floor doping area n (11), feature
It is:
Mercury cadmium telluride medium wave floor is obtained by conventional doping in the side of p-type mercury cadmium telluride medium wave floor (1) and adulterates the area n (11), in formation
The photosensitive member of wave layer pn-junction；There are p-type mercury cadmium telluride barrier layer (2) and p-type mercury cadmium telluride on the other side of p-type mercury cadmium telluride medium wave layer (1)
Long wave layer (3) obtains the mercury cadmium telluride long wave floor doping area n (4) by conventional doping on p-type mercury cadmium telluride long wave floor (3), forms length
The photosensitive member of wave layer pn-junction；Growth of passivation layer (5), metal layer on p-type mercury cadmium telluride medium wave layer (1) and p-type mercury cadmium telluride long wave layer (3)
(6) and zinc sulfide layer (7), long wave indium column (8), medium wave indium column (9), public electrode indium column (10) are signal extraction electrode.
2. a kind of mode two waveband mercury-cadmium tellurid detector simultaneously according to claim 1, it is characterised in that: the p-type
The thickness of mercury cadmium telluride medium wave layer (1) is between 5 μm to 8 μm.
3. a kind of mode two waveband mercury-cadmium tellurid detector simultaneously according to claim 1, it is characterised in that: the p-type
The thickness of mercury cadmium telluride barrier layer (2) is between 1 μm to 2 μm.
4. a kind of mode two waveband mercury-cadmium tellurid detector simultaneously according to claim 1, it is characterised in that: the p-type
The thickness of mercury cadmium telluride long wave layer (3) is between 2.5 μm to 4 μm.
5. a kind of mode two waveband mercury-cadmium tellurid detector simultaneously according to claim 1, it is characterised in that: the tellurium cadmium
Mercury long wave floor adulterates the thickness of the area n (4) between 1 μm to 1.5 μm.
6. a kind of mode two waveband mercury-cadmium tellurid detector simultaneously according to claim 1, it is characterised in that: the tellurium cadmium
Mercury medium wave floor adulterates the thickness of the area n (11) between 1 μm to 1.5 μm.
7. a kind of mode two waveband mercury-cadmium tellurid detector simultaneously according to claim 1, it is characterised in that: the passivation
Layer (5) is made of cadmium telluride and zinc sulphide, first covers cadmium telluride, then cover zinc sulphide, cadmium telluride thickness is in 100nm to 200nm
Between, zinc sulphide thickness is between 100nm to 200nm.
8. a kind of mode two waveband mercury-cadmium tellurid detector simultaneously according to claim 1, it is characterised in that: the metal
Layer (6) first covers tin by tin and Jin Zucheng, then covers gold, and between 20nm to 40nm, Jin Houdu is arrived tin thickness in 60nm
Between 120nm.
9. a kind of mode two waveband mercury-cadmium tellurid detector simultaneously according to claim 1, it is characterised in that: the vulcanization
Zinc layers (7) are made of zinc sulphide, and thickness is between 100nm to 300nm.
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1794473A (en) * | 2005-10-27 | 2006-06-28 | 中国科学院上海技术物理研究所 | Micromesa arrayed tellurium cadmium mercury infrared two-band focal planar detector chip |
| CN102420270A (en) * | 2011-11-10 | 2012-04-18 | 中国科学院上海技术物理研究所 | Extended electrode for photovoltaic tellurium-cadmium-mercury probe and preparation method for extended electrode |
| CN102790100A (en) * | 2012-08-15 | 2012-11-21 | 中国科学院物理研究所 | InSb quantum dot polychrome infrared detector based on middle energy band |
| CN103904161A (en) * | 2014-03-25 | 2014-07-02 | 中国科学院半导体研究所 | Preparation method for area array of double-grating and bicolor quantum well infrared detector |
| US9490292B1 (en) * | 2013-03-15 | 2016-11-08 | Hrl Laboratories, Llc | Dual-band detector array |
| US20180019269A1 (en) * | 2016-07-14 | 2018-01-18 | Semi Conductor Devices-An Elbit Systems-Rafael Partnership | Dual band photodetector and a method thereof |
| CN209929317U (en) * | 2019-05-17 | 2020-01-10 | 中国科学院上海技术物理研究所 | Simultaneous mode dual-band mercury cadmium telluride detector |
| CN114664974A (en) * | 2022-02-15 | 2022-06-24 | 中国电子科技集团公司第十一研究所 | Infrared focal plane device chip and preparation method thereof, and readout circuit and preparation method thereof |
-
2019
- 2019-05-17 CN CN201910414304.5A patent/CN110265492B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1794473A (en) * | 2005-10-27 | 2006-06-28 | 中国科学院上海技术物理研究所 | Micromesa arrayed tellurium cadmium mercury infrared two-band focal planar detector chip |
| CN102420270A (en) * | 2011-11-10 | 2012-04-18 | 中国科学院上海技术物理研究所 | Extended electrode for photovoltaic tellurium-cadmium-mercury probe and preparation method for extended electrode |
| CN102790100A (en) * | 2012-08-15 | 2012-11-21 | 中国科学院物理研究所 | InSb quantum dot polychrome infrared detector based on middle energy band |
| US9490292B1 (en) * | 2013-03-15 | 2016-11-08 | Hrl Laboratories, Llc | Dual-band detector array |
| CN103904161A (en) * | 2014-03-25 | 2014-07-02 | 中国科学院半导体研究所 | Preparation method for area array of double-grating and bicolor quantum well infrared detector |
| US20180019269A1 (en) * | 2016-07-14 | 2018-01-18 | Semi Conductor Devices-An Elbit Systems-Rafael Partnership | Dual band photodetector and a method thereof |
| CN209929317U (en) * | 2019-05-17 | 2020-01-10 | 中国科学院上海技术物理研究所 | Simultaneous mode dual-band mercury cadmium telluride detector |
| CN114664974A (en) * | 2022-02-15 | 2022-06-24 | 中国电子科技集团公司第十一研究所 | Infrared focal plane device chip and preparation method thereof, and readout circuit and preparation method thereof |
Non-Patent Citations (3)
| Title |
|---|
| WEIDA HU等: "1、128×128 long-wavelength/mid -wavelength two-color HgCdTe infrared focal plane array detector with ultralow spectral cross talk", 《OPTICS LETTERS》, vol. 39, no. 17, pages 5185 * |
| 刘棱枫: "碲镉汞双色微台面芯片的成形技术", 《中国博士学位论文全文数据库信息科技辑》, pages 135 - 21 * |
| 覃钢;李东升;李雄军;李艳辉;王向前;杨彦;铁筱莹;左大凡;薄俊祥;: "分子束外延中波红外碲镉汞原位p-on-n技术研究", 红外技术, no. 10, pages 820 - 824 * |
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