CN110265417A - Imaging sensor and forming method thereof - Google Patents
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
A kind of imaging sensor and forming method thereof, comprising: substrate, the substrate include opposite the first face and the second face, and the substrate includes several pixel regions；Filter layer positioned at each second face of pixel region surface；Positioned at the controllable photo structure of each filter surfaces.Described image sensor performance gets a promotion.
Description
Technical field
The present invention relates to field of semiconductor manufacture more particularly to a kind of imaging sensor and forming method thereof.
Background technique
With the rapid development of semiconductor technology, complementary metal oxide (Complementary Metal Oxide
Semiconductor, abbreviation CMOS) imaging sensor be widely applied in electronic equipment of various, as provide digital imagery function
The image capture device of energy uses.Imaging sensor uses photosensitive pixel array acquisition image information, and pixel image signal is turned
It is changed to pixel photosignal, the true picture information of each pixel is restored using image signal process operation.
Imaging sensor in the prior art generally uses the photosensitive pixel array arrangement mode of Bayer pattern, with electrical
The fast development of technology and electronic technology, the modern mobile electronic product of more and more image application sensor technologies, such as intelligence
Mobile phone, digital camera, laptop etc. are developed rapidly and are popularized.Currently, people disappearing on the electronic products such as mobile phone
Take that ratio is higher and higher, the quality and personal experience to product require increasingly harsher.Imaging sensor as electronic product at
The main component of picture, the requirement to its image quality are also higher and higher.
But the performance of existing imaging sensor is still to be improved.
Summary of the invention
The technical problem to be solved by the present invention is to provide a kind of imaging sensors and forming method thereof, to improve imaging sensor
Performance.
In order to solve the above technical problems, technical solution of the present invention provides a kind of imaging sensor, comprising: substrate, the lining
Bottom includes opposite the first face and the second face, and the substrate includes several pixel regions；Positioned at each second face of pixel region surface
Filter layer；Positioned at the controllable photo structure of each filter surfaces.
Optionally, the adjusting optical control structure includes: first electrode layer, positioned at first electrode layer surface control photosphere and
The second electrode lay positioned at control photosphere surface.
Optionally, the material of the control photosphere includes organic material；The organic material includes liquid crystal.
Optionally, the thickness range of the control photosphere is 100nm~1000nm.
Optionally, the material of the first electrode layer includes tin indium oxide, fluorine-doped tin oxide or Al-Doped ZnO；Described
The material of two electrode layers includes tin indium oxide, fluorine-doped tin oxide or Al-Doped ZnO.
Optionally, the thickness range of the first electrode layer are as follows: 50nm~200nm；The thickness model of the second electrode lay
It encloses are as follows: 50nm~200nm.
Optionally, the transmitance of the first electrode layer is greater than 90%；The transmitance of the second electrode lay is greater than 90%.
Optionally, several pixel regions include the first pixel region, the second pixel region and third pixel region, first picture
Plain area and second pixel region are adjacent, and second pixel region and the third pixel region are adjacent.
Optionally, the filter layer includes positioned at first filter layer on the first pixel region surface, positioned at the second pixel region table
Second filter layer in face and third filter layer positioned at third pixel region surface；First filter layer and the second filter layer are logical
The monochromatic light crossed is different, the monochromatic light difference and first filter layer that second filter layer and third filter layer pass through
It is different with the monochromatic light that third filter layer passes through.
Optionally, first filter layer is feux rouges filter layer, and second filter layer is green light filter layer, the third
Filter layer is blue light filter layer；Alternatively, first filter layer is blue light filter layer, second filter layer is green light optical filtering
Layer, the third filter layer are feux rouges filter layer.
Optionally, the filter layer is also located in the shielding construction on second face of each pixel region surface.
Optionally, the controllable photo structure is also located in the isolation structure of the filter surfaces.
Optionally, further includes: the lens positioned at the controllable photo structure surface.
Correspondingly, technical solution of the present invention also provides a kind of method for forming any of the above-described imaging sensor, spy includes:
Substrate is provided, the substrate includes opposite the first face and the second face, and the substrate includes several pixel regions；In each pixel
Area the second face surface forms filter layer；Controllable photo structure is formed in each filter surfaces.
Optionally, the forming method of the controllable photo structure includes: in the shielding construction and each filter layer table
Face forms spacer material layer, and the isolated material layer surface has patterned first mask layer；With described patterned first
Mask layer is spacer material layer described in mask etching, the shielding construction and each filter surfaces formed the first groove,
Second groove and third groove, first groove are located at first filter surfaces, and second groove is located at described the
Two filter surfaces, the third groove are located at the third filter surfaces；In first groove, the second groove and third
Bottom portion of groove forms first electrode layer, forms sacrificial layer in first electrode layer surface；The second electricity is formed in the sacrificial layer surface
Pole layer；The first protective layer is formed in the second electrode layer surface；It is formed and is opened in first protective layer and the second electrode lay
Mouthful；After forming opening, the sacrificial layer is removed, forms cavity；It after forming cavity, is formed in cavity and controls photosphere, described in formation
Controllable photo structure.
Optionally, the formation process of the first electrode layer includes sputtering technology or evaporation process；The second electrode
The formation process of layer includes sputtering technology or evaporation process.
Optionally, the pixel region includes the first pixel region, the second pixel region and third pixel region, and the filter layer includes
The first filter layer positioned at the first pixel region surface, the second filter layer positioned at the second pixel region surface and be located at third pixel
The third filter layer on area surface；The forming method of first filter layer, the second filter layer and third filter layer includes: in institute
It states the first pixel region, the second pixel region and third pixel region the second face surface and forms shielding material layer, the shielding material layer
Surface has patterned second mask layer；Using patterned second mask layer as shielding material layer described in mask etching,
The 4th groove is formed on the first pixel region the second face surface, it is recessed to form the 5th on the second pixel region the second face surface
Slot forms the 6th groove on third pixel region the second face surface；The first filter layer is formed in the 4th groove；Institute
It states and forms the second filter layer in the 5th groove；Third filter layer is formed in the 6th groove.
Correspondingly, technical solution of the present invention also provides a kind of working method of any of the above-described imaging sensor, comprising: right
The first electrode layer and the second electrode lay load bias；When bias is 0, the Liquid Crystal Molecules Alignment is chaotic, and light cannot
Pass through；When bias is greater than 1.3 volts, the neat degree of the Liquid Crystal Molecules Alignment is big, and light throughput is big；When bias is less than
At 1.3 volts, the neat degree of the Liquid Crystal Molecules Alignment reduces, and light throughput is small.
Compared with prior art, technical solution of the present invention has the advantages that
In the structure of described image sensor, pass through each filter surfaces setting on each second face of pixel region surface
Controllable photo structure, the adjustable light intensity size entered in each pixel region of the controllable photo structure, works as light
When strong larger, the controllable photo structure make by light transit dose reduce；When light intensity is smaller, the controllable light knot
Structure make by light transit dose increase, so as to avoid when ambient light intensity is larger, enter the light in pixel region
The photoelectron amount that amount is more and generates is more, electronics spilling occurs, and then the case where pixel white point occur；The electronics overflowed is avoided simultaneously
Enter the case where pixel region of surrounding is to influence surrounding pixel area.To sum up, improve described image sensor at image quality
Amount.
Further, the controllable photo structure includes control photosphere, and the material of the control photosphere includes liquid crystal, by difference
The control photosphere of filter surfaces individually controls, so that the light intensity for entering a filter layer changes, then passes through one
The photoelectron amount that the light that filter layer enters in pixel region generates changes, and finally makes the entirety of described image sensor
Imaging changes, then the control photo structure plays the role of filter.
Detailed description of the invention
Fig. 1 is a kind of the schematic diagram of the section structure of imaging sensor；
Fig. 2 to Fig. 9 is the schematic diagram of the section structure of imaging sensor forming process in the embodiment of the present invention.
Specific embodiment
As stated in the background art, there are also to be hoisted for existing image sensor performance.Now in conjunction with a kind of imaging sensor
Structure carries out analytic explanation.
Fig. 1 is a kind of the schematic diagram of the section structure of imaging sensor.
Referring to FIG. 1, providing substrate 100, the substrate 100 includes opposite the first face and the second face, the substrate 100
Including pixel region, there is photosensitive structure 101 and the deep trench isolation structure between photosensitive structure 101 in the pixel region
102,100 first face of substrate exposes 101 surface of photosensitive structure, and the 100 second face surface of substrate exposes institute
State the surface of deep trench isolation structure 102；Dielectric layer 103 positioned at the 100 second face surface of substrate；Positioned at dielectric layer 103
The filter layer 104 on surface；And the lens 105 positioned at 104 surface of filter layer.
In the structure of described image sensor, the lens 105 for converge light make light through filter layer 104 into
Enter into photosensitive structure 101, the photosensitive structure 101 is photodiode, and optical signal is become telecommunications by the photodiode
Number and form photoelectric current electric signal transmitted, and this electric signal with the variation of light corresponding change.
However, entering the light in the photosensitive structure 101 when ambient light light intensity is larger with regard to more, then generating
Photoelectron amount is with regard to more, it may appear that the case where electronics overflows generates Flowering Phenomenon, the electronics of spilling to pixel white point occur
Can also surrounding pixel unit be entered and influence surrounding pixel unit, to influence the whole image quality of imaging sensor.
To solve the above-mentioned problems, technical solution of the present invention provides a kind of imaging sensor and forming method thereof, passes through
Filtering structure surface setting control photo structure on second face of pixel region surface, the control photo structure is adjustable to enter institute
The light intensity size in pixel region is stated, so as to avoid when ambient light intensity is larger, enters the light quantity in pixel region
Photoelectron amount that is more and generating is more, electronics spilling occurs, and then the case where pixel white point occur；Simultaneously avoid overflow electronics into
Enter the pixel region to surrounding thus the case where influencing surrounding pixel area.To sum up, the image quality of described image sensor is improved.
It is understandable to enable above-mentioned purpose of the invention, feature and beneficial effect to become apparent, with reference to the accompanying drawing to this
The specific embodiment of invention is described in detail.
Fig. 2 to Fig. 9 is the schematic diagram of the section structure of imaging sensor forming process in the embodiment of the present invention.
Referring to FIG. 2, providing substrate 200, the substrate 200 includes opposite the first face and the second face, the substrate 200
Including several pixel regions.
Several pixel regions include the first pixel region I, the second pixel region II and third pixel region III, first picture
Plain area I and the second pixel region II are adjacent, and the second pixel region II and the third pixel region III are adjacent.
In the present embodiment, there is photosensitive structure 201 and the deep trench between photosensitive structure 201 in the pixel region
Isolation structure 202,200 first face of substrate expose 201 surface of photosensitive structure, the 200 second face surface of substrate
Expose the surface of the deep trench isolation structure 202.
In the present embodiment, the photosensitive structure 201 is photodiode, and optical signal is become electricity by the photodiode
Signal simultaneously forms photoelectric current and transmits to electric signal.In other embodiments, the photosensitive structure 201 can also be photosensitive
The component of other realization photoelectric converting functions such as metal-oxide-semiconductor.
The deep trench isolation structure 202 is used to prevent the optical crosstalk and electrical crosstalk in adjacent pixel area.
The material of the substrate 200 is semiconductor material.In the present embodiment, the material of the substrate 200 is silicon.Other
In embodiment, the material of the substrate 200 include silicon carbide, SiGe, III-group Ⅴ element constitute polynary semiconductor material, absolutely
Silicon (SOI) or germanium on insulator on edge body.Wherein, III-group Ⅴ element constitute polynary semiconductor material include InP, GaAs,
GaP, InAs, InSb, InGaAs or InGaAsP.
In the present embodiment, the substrate 200 further includes logic area (not shown), and the logic area has logic circuit
(not shown), the logic circuit are used for and the semiconductor devices such as other logic circuits, component, conductive structure or transistor
Electrical connection.
The logic area surrounds the pixel region.
Next, forming filter layer on each pixel region the second face surface.
The filter layer includes positioned at first filter layer on the first surface pixel region I, positioned at the second surface pixel region II
Second filter layer and third filter layer positioned at the surface third pixel region III.
In the present embodiment, the monochromatic light that first filter layer and the second filter layer pass through is different, and described second filters
The monochromatic light that layer is different with the monochromatic light that third filter layer passes through and first filter layer and third filter layer pass through is not
Together.
In the present embodiment, the filter layer is also located in the shielding construction on second face of each pixel region surface.
Referring to FIG. 3, the second face the first pixel region I surface, the second face surface the second pixel region II and
The the second face surface third pixel region III forms shielding construction 204.
Before forming the shielding construction, dielectric layer 203 is formed on the 200 second face surface of substrate.
The material of the dielectric layer 203 includes silicon oxide or silicon nitride.In the present embodiment, the material of the dielectric layer 203
Material includes silica.
The dielectric layer 203 is for increasing the transmitance that light enters pixel region.
In other embodiments, the dielectric layer 203 can not be formed.
The forming method of the shielding construction 204 includes: in the first pixel region I, the second pixel region II and third
The the second face surface pixel region III forms shielding material layer (not shown), and the shielding material layer surface has patterned second
Mask layer (not shown)；Using patterned second mask layer as shielding material layer described in mask etching, until exposing institute
203 surface of electric layer is given an account of, the 4th groove 304 is formed on the second face surface the first pixel region I, in the second pixel region II
Second face surface forms the 5th groove 305, forms the 6th groove 306 on the second face surface the third pixel region III, and described
Shielding material layer forms the shielding construction 204.
The material of the shielding construction 204 includes: metal material；The metal material includes: copper, tungsten, nickel, chromium, titanium, tantalum
With one of aluminium or multiple combinations.
In the present embodiment, the material of the shielding construction 204 is tungsten.
The technique for forming the shielding material layer includes depositing operation or electroplating technology.In the present embodiment, described in formation
The technique of shielding material layer includes depositing operation.
The technique for etching the shielding material layer includes dry etch process or wet-etching technology.In the present embodiment
In, the technique for etching the shielding material layer is anisotropic dry etch process.
The shielding construction 204 is used to prevent the optical crosstalk in adjacent filter layer.
4th groove 304 forms the first filter layer in the 4th groove 304 for subsequent.
5th groove 305 forms the second filter layer in the 5th groove 305 for subsequent.
6th groove 306 forms third filter layer for subsequent in the 6th groove 306.
In the present embodiment, patterned second mask material is photoresist.In other embodiments, the figure
Second mask layer of shape is hard exposure mask, and the material of the hard exposure mask is silicon oxide or silicon nitride.
After forming the shielding construction 204, patterned second mask layer is removed.In the present embodiment, institute is removed
The technique for stating patterned second mask layer includes cineration technics.
Referring to FIG. 4, forming the first filter layer 314 in the 4th groove 304；The shape in the 5th groove 305
At the second filter layer 315；Third filter layer 316 is formed in the 6th groove 306.
The formation process of first filter layer 314 includes depositing operation.
The formation process of second filter layer 315 includes depositing operation.
The formation process of the third filter layer 316 includes depositing operation.
In the present embodiment, first filter layer 314 is feux rouges filter layer, and second filter layer 315 is green light filter
Photosphere, the third filter layer 316 are blue light filter layer.In other embodiments, first filter layer 314 is blue light optical filtering
Layer, second filter layer 315 are green light filter layer, and the third filter layer 316 is feux rouges filter layer.
The material of the filter layer includes the organic material doped with pigment.The organic material doped with pigment, can
With according to doping pigment difference, selection can by monochromatic light.
Natural light is white light made of the set of multiple color of light, and natural light is after filter layer, only part specific wavelength
Monochromatic light can pass through, to generate specific monochromatic light.
In the present embodiment, the material of first filter layer 314 is the organic material doped with red pigment, described the
One filter layer 314 penetrates red light, then the first pixel region I is feux rouges pixel region；The material of second filter layer 315
For the organic material doped with viridine green, second filter layer 315 penetrate green light, then the second pixel region II is
Green light pixel region；The material of the third filter layer 316 is the organic material doped with blue pigment, the third filter layer
316 penetrate blue light, then the third pixel region III is blue light pixel region.
Next, forming controllable photo structure in each filter surfaces.
The controllable photo structure includes the first control photo structure positioned at 314 surface of the first filter layer, is located at second and filters
The second control photo structure on 315 surface of layer, and the third control photo structure positioned at 316 surface of third filter layer.
In the present embodiment, the first control photo structure, the second control photo structure and third control photo structure are formed simultaneously.
In the present embodiment, the controllable photo structure is also located in the isolation structure of each filter surfaces.
Referring to FIG. 5, forming isolation structure 205 on 204 surface of shielding construction and each filter surfaces.
The forming method of the isolation structure 205 includes: to be formed in the shielding construction 204 and each filter surfaces
Spacer material layer (not shown), the isolated material layer surface have patterned first mask layer (not shown)；With the figure
First mask layer of shape is spacer material layer described in mask etching, in the shielding construction 204 and each filter surfaces
The first groove 301, the second groove 302 and third groove 303 are formed, first groove 301 is located at first filter layer 314
Surface, second groove 302 are located at 315 surface of the second filter layer, and the third groove 303 is located at third optical filtering
316 surface of layer, and the spacer material layer forms the isolation structure 205.
In the present embodiment, the material of the isolation structure 205 includes silica.In other embodiments, the isolation
The material of structure 205 can be transparent other materials.
The technique for forming the spacer material layer includes chemical vapor deposition process or atom layer deposition process.In this reality
It applies in example, the technique for forming the spacer material layer includes chemical vapor deposition process.
In the present embodiment, the thickness range of the spacer material layer is 500nm~2000nm.
The technique for etching the spacer material layer includes dry etch process or wet-etching technology.In the present embodiment
In, the technique for etching the spacer material layer is anisotropic dry etch process.
The isolation structure 205 provides space for the controllable photo structure and supports.
First groove 301 forms the first control photo structure for subsequent in first groove 301.
Second groove 302 forms the second control photo structure for subsequent in second groove 302.
The third groove 303 forms third control photo structure for subsequent in the third groove 303.
In the present embodiment, first groove 301, the second groove 302 and third groove 303 are formed simultaneously.At other
In embodiment, first groove 301, the second groove 302 and third groove 303 can not be formed simultaneously.
In the present embodiment, the depth bounds of first groove 301, the second groove 302 and third groove 303 are as follows:
500nm~1500nm.
In the present embodiment, patterned second mask material is photoresist.In other embodiments, the figure
Second mask layer of shape is hard exposure mask, and the material of the hard exposure mask is silicon oxide or silicon nitride.
After forming the shielding construction 204, patterned first mask layer is removed.In the present embodiment, institute is removed
The technique for stating patterned first mask layer includes cineration technics.
Referring to FIG. 6, forming first electrode in first groove 301, the second groove 302 and 303 bottom of third groove
Layer 401 forms sacrificial layer 403 on 401 surface of first electrode layer；The second electrode lay 402 is formed on 403 surface of sacrificial layer；
The first protective layer 404 is formed on 402 surface of the second electrode lay.
In the present embodiment, the technique for forming the first electrode layer 401 includes chemical vapor deposition process.
In the present embodiment, the technique for forming the second electrode lay 402 includes chemical vapor deposition process.
The thickness range of the first electrode layer 401 are as follows: 50nm~200nm；The thickness range of the second electrode lay 402
Are as follows: 50nm~200nm.
If the thickness of the first electrode layer 401 and the second electrode lay 402 is less than 50nm, the first electrode layer 401
It is difficult to control with 402 processing procedure precision of the second electrode lay；If the thickness of the first electrode layer 401 and the second electrode lay 402 is greater than
200nm then can have loss to transmitance.
The transmitance of the first electrode layer 401 is greater than 90%；The transmitance of the second electrode lay 402 is greater than 90%.
The material of the first electrode layer 401 includes tin indium oxide, fluorine-doped tin oxide or Al-Doped ZnO；Second electricity
The material of pole layer 402 includes tin indium oxide, fluorine-doped tin oxide or Al-Doped ZnO.
In the present embodiment, the first electrode layer 401 is identical with the material of the second electrode lay 402.Described first
The material of electrode layer 401 includes tin indium oxide；The material of the second electrode lay 402 includes tin indium oxide.
The first electrode layer 401 and the second electrode lay 402 provide bias for the control photosphere being subsequently formed, and pass through control
Bias size processed makes the control photosphere realize the function of adjusting light throughput.
In the present embodiment, the material protection photoresist of the sacrificial layer 403.In other embodiments, the sacrificial layer
403 material is the material that other are easily removed.
The sacrificial layer 403 provides space for controlling the filling of photosphere after subsequent be removed.
In the present embodiment, the technique for forming the sacrificial layer 403 includes spraying process.
In the present embodiment, the thickness range of the sacrificial layer 403 is 100nm~1000nm.The thickness of the sacrificial layer 403
Degree is the thickness for the control photosphere being subsequently formed.
In the present embodiment, the material of first protective layer 404 includes silica.In other embodiments, described
The material of one protective layer 404 is other transparent hard materials.
In the present embodiment, the technique of first protective layer 404 includes atom layer deposition process.In other embodiments
In, the technique of first protective layer 404 includes chemical vapor deposition process.
The atom layer deposition process can form the first protective layer 404 of compact structure and thinner thickness.
In the present embodiment, the thickness range of first protective layer 404 are as follows: 100nm~500nm.
In the present embodiment, the transmitance of first protective layer 404 is greater than 85%.
First protective layer 404 avoids being damaged in subsequent technique for protecting the second electrode lay 402
Wound.
Referring to FIG. 7, forming opening 405 in first protective layer 404 and first electrode layer 401；Form opening 405
Afterwards, the sacrificial layer 403 is removed, cavity 406 is formed.
It includes: described first that the method for opening 405 is formed in first protective layer 404 and first electrode layer 401
404 surface of protective layer forms patterned third mask layer (not shown)；It is carved by exposure mask of the patterned third mask layer
First protective layer 404 and first electrode layer 401 are lost, is formed and is opened in first protective layer 404 and first electrode layer 401
Mouth 405.
In the present embodiment, etching first protective layer 404 and the technique of first electrode layer 401 includes anisotropic dry
Method etching technics.The etching precision of the anisotropic dry etch process is preferable.
In the present embodiment, the technique for removing the sacrificial layer 403 includes cineration technics.The cineration technics can will be described
Sacrificial layer 403 fast and efficiently removes completely.
Referring to FIG. 8, forming control photosphere 407 in the cavity 406 after forming cavity 406, forming the controllable light
Structure.
The adjusting optical control structure includes: first electrode layer 401, positioned at 401 surface of first electrode layer control photosphere 403 with
And the second electrode lay 402 positioned at control 403 surface of photosphere.
In the present embodiment, the controllable photo structure includes the first control photo structure positioned at 314 surface of the first filter layer,
Second positioned at 315 surface of the second filter layer controls photo structure, and the third control photo structure positioned at 316 surface of third filter layer.
The material of the control photosphere 407 includes organic material.In the present embodiment, the organic material includes liquid crystal.
The material selection liquid crystal of the control photosphere 407, in the case where electric field conducting, the arrangement of the liquid crystal molecule becomes
It is orderly, so that light be made to pass through；In the case where electric field is not turned on, the fall into disarray of the liquid crystal molecule, to prevent light
Line passes through.So as to pass through the size of control voltage, to adjust the throughput of light.
In the present embodiment, the technique for forming the control photosphere 407 includes injection technology.
So far, the controllable photo structure formed in each filter surfaces, the controllable photo structure it is adjustable into
Enter to the light intensity size in each pixel region, when light intensity is larger, the controllable photo structure make by light
Transit dose reduces；When light intensity is smaller, the controllable photo structure make by light transit dose increase, so as to avoid
When ambient light intensity is larger, the photoelectron amount that the light quantity entered in each pixel region generates more is more, electronics spilling occurs, into
And there is the case where pixel white point；The electronics overflowed is avoided to enter the pixel region of surrounding to influence surrounding pixel area simultaneously
Situation.
In the present embodiment, it is formed after the control photosphere 407, forms second on 404 surface of the first protective layer and protect
Sheath 408.
The material of second protective layer 408 is identical with the material of first protective layer 404.
Second protective layer 408 protects the control photosphere 403 for closing the opening 405, to form airtight cavity
It avoids overflowing from opening 405, and the function of the controllable photo structure is better achieved.
Referring to FIG. 9, being formed after the controllable photo structure, lens 409 are formed on the controllable photo structure surface.
The lens jacket 409 is for assembling light, so that light enters the controllable photo structure, filter along specific optical path
Photosphere and photosensitive structure 201.
The material of the lens jacket 409 includes glass or resin.In the present embodiment, the material packet of the lens jacket 409
Include glass.
Correspondingly, the embodiment of the present invention also provide it is a kind of imaging sensor is formed by using the above method, continuing with ginseng
Examine Fig. 9, comprising:
Substrate 200, the substrate 200 include opposite the first face and the second face, and the substrate includes the first pixel region I,
Second pixel region II and third pixel region III, the first pixel region I and the second pixel region II are adjacent, and described second
Pixel region II and the third pixel region III are adjacent；
The first filter layer 314 positioned at the first surface pixel region I, the second filter layer positioned at the second surface pixel region II
315, the third filter layer 316 positioned at the surface third pixel region III；
Positioned at the controllable photo structure of each filter surfaces, the controllable photo structure includes first electrode layer 401,
The second electrode lay 402 positioned at the control photosphere 407 on 401 surface of first electrode layer and positioned at control 407 surface of photosphere, it is described adjustable
Control photo structure includes the first control photo structure positioned at 314 surface of the first filter layer, the second control positioned at 315 surface of the second filter layer
Photo structure, and the third control photo structure positioned at 316 surface of third filter layer；
Lens 408 positioned at the controllable photo structure surface；
The material of the control photosphere 407 includes organic material, and the organic material includes liquid crystal；
The material of the first electrode layer 401 includes tin indium oxide, fluorine-doped tin oxide or Al-Doped ZnO；Second electricity
The material of pole layer 402 includes tin indium oxide, fluorine-doped tin oxide or Al-Doped ZnO.
Correspondingly, the embodiment of the present invention also provides a kind of working method of imaging sensor, with continued reference to FIG. 9, including:
Bias is loaded to the first electrode layer 401 and the second electrode lay 402；
When bias is 0, the Liquid Crystal Molecules Alignment is chaotic, and light cannot pass through；
When bias is greater than 1.3 volts, the neat degree of the Liquid Crystal Molecules Alignment is big, and light throughput is big；
When bias is less than 1.3 volts, the neat degree of the Liquid Crystal Molecules Alignment reduces, and light throughput is small.
By the second control for individually controlling the first control photo structure, 315 surface of the second filter layer on 314 surface of the first filter layer
The third control photo structure on 316 surface of photo structure and third filter layer, so that entering the optical filtering of the firstth filter layer 314, second
Light intensity in layer 315 and third filter layer 316 changes, then enters corresponding first pixel by each filter layer
The photoelectron amount that light in area I, the second pixel region II and third pixel region III generates changes, and finally makes described
The whole imaging of imaging sensor changes, then the controllable photo structure plays the role of filter.
Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (18)
1. a kind of imaging sensor characterized by comprising
Substrate, the substrate include opposite the first face and the second face, and the substrate includes several pixel regions；
Filter layer positioned at each second face of pixel region surface；
Positioned at the controllable photo structure of each filter surfaces.
2. imaging sensor as described in claim 1, which is characterized in that the adjusting optical control structure includes: first electrode layer,
The second electrode lay positioned at the control photosphere of first electrode layer surface and positioned at control photosphere surface.
3. imaging sensor as claimed in claim 2, which is characterized in that the material of the control photosphere includes organic material；Institute
Stating organic material includes liquid crystal.
4. imaging sensor as claimed in claim 2, which is characterized in that it is described control photosphere thickness range be 100nm~
1000nm。
5. imaging sensor as claimed in claim 2, which is characterized in that the material of the first electrode layer includes indium oxide
Tin, fluorine-doped tin oxide or Al-Doped ZnO；The material of the second electrode lay includes tin indium oxide, fluorine-doped tin oxide or mixes alumina
Change zinc.
6. imaging sensor as claimed in claim 2, which is characterized in that the thickness range of the first electrode layer are as follows: 50nm
~200nm；The thickness range of the second electrode lay are as follows: 50nm~200nm.
7. imaging sensor as claimed in claim 2, which is characterized in that the transmitance of the first electrode layer is greater than 90%；
The transmitance of the second electrode lay is greater than 90%.
8. imaging sensor as described in claim 1, which is characterized in that several pixel regions include the first pixel region, the
Two pixel regions and third pixel region, first pixel region and second pixel region are adjacent, and second pixel region and institute
It is adjacent to state third pixel region.
9. imaging sensor as claimed in claim 8, which is characterized in that the filter layer includes being located at the first pixel region surface
The first filter layer, the second filter layer positioned at the second pixel region surface and the third positioned at third pixel region surface filter
Layer；The monochromatic light that first filter layer and the second filter layer pass through is different, and second filter layer and third filter layer pass through
The monochromatic light that monochromatic light is different and first filter layer and third filter layer pass through it is different.
10. imaging sensor as claimed in claim 9, which is characterized in that first filter layer is feux rouges filter layer, described
Second filter layer is green light filter layer, and the third filter layer is blue light filter layer；Alternatively, first filter layer is blue light filter
Photosphere, second filter layer are green light filter layer, and the third filter layer is feux rouges filter layer.
11. imaging sensor as described in claim 1, which is characterized in that the filter layer is also located at each pixel region
In the shielding construction in two faces surface.
12. imaging sensor as described in claim 1, which is characterized in that the controllable photo structure is also located at the optical filtering
In the isolation structure of layer surface.
13. imaging sensor as described in claim 1, which is characterized in that further include: it is located at the controllable photo structure surface
Lens.
14. a kind of method formed such as claim 1 to 13 any image sensor characterized by comprising
Substrate is provided, the substrate includes opposite the first face and the second face, and the substrate includes several pixel regions；
Filter layer is formed on each pixel region the second face surface；
Controllable photo structure is formed in each filter surfaces.
15. the forming method of imaging sensor as claimed in claim 14, which is characterized in that the formation of the controllable photo structure
Method includes: to form spacer material layer, the spacer material layer table on the shielding construction surface and each filter surfaces
Face has patterned first mask layer；Using patterned first mask layer as spacer material layer described in mask etching,
The shielding construction and each filter surfaces form the first groove, the second groove and third groove, first groove position
In first filter surfaces, second groove is located at second filter surfaces, and the third groove is located at described
Third filter surfaces；First electrode layer is formed in first groove, the second groove and third bottom portion of groove, in first electrode
Layer surface forms sacrificial layer；The second electrode lay is formed in the sacrificial layer surface；First is formed in the second electrode layer surface
Protective layer；Opening is formed in first protective layer and the second electrode lay；After forming opening, the sacrificial layer is removed, is formed
Cavity；After forming cavity, control photosphere is formed in cavity, forms the controllable photo structure.
16. the forming method of imaging sensor as claimed in claim 14, which is characterized in that the formation work of the first electrode layer
Skill includes sputtering technology or evaporation process；The formation process of the second electrode lay includes sputtering technology or evaporation process.
17. the forming method of imaging sensor as claimed in claim 14, which is characterized in that the pixel region includes the first pixel
Area, the second pixel region and third pixel region, the filter layer include positioned at the first pixel region surface the first filter layer, be located at the
Second filter layer on two pixel region surfaces and third filter layer positioned at third pixel region surface；First filter layer,
The forming method of two filter layers and third filter layer includes: in first pixel region, the second pixel region and third pixel
Area the second face surface forms shielding material layer, and the shielding material layer surface has patterned second mask layer；With the figure
Second mask layer of shape is shielding material layer described in mask etching, and it is recessed to form the 4th on the first pixel region the second face surface
Slot, forms the 5th groove on the second pixel region the second face surface, forms the 6th on third pixel region the second face surface
Groove；The first filter layer is formed in the 4th groove；The second filter layer is formed in the 5th groove；The described 6th
Third filter layer is formed in groove.
18. a kind of working method of such as described in any item imaging sensors of claim 1 to 17 characterized by comprising
Bias is loaded to the first electrode layer and the second electrode lay；
When the bias is 0, the Liquid Crystal Molecules Alignment is chaotic, and light cannot pass through；
When the bias is greater than 1.3 volts, the neat degree of the Liquid Crystal Molecules Alignment is big, and light throughput is big；
When the bias is less than 1.3 volts, the neat degree of the Liquid Crystal Molecules Alignment reduces, and light throughput is small.
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| CN102647567A (en) * | 2012-04-27 | 2012-08-22 | 上海中科高等研究院 | CMOS (complementary metal oxide semiconductor) image sensor and a pixel structure thereof |
| CN102956656A (en) * | 2011-08-26 | 2013-03-06 | 索尼公司 | Solid-state image sensing device and electronic apparatus |
| CN103296042A (en) * | 2013-05-30 | 2013-09-11 | 豪威科技(上海)有限公司 | Backside-illuminated CMOS (complementary metal oxide semiconductor) image sensor and production method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102956656A (en) * | 2011-08-26 | 2013-03-06 | 索尼公司 | Solid-state image sensing device and electronic apparatus |
| CN102647567A (en) * | 2012-04-27 | 2012-08-22 | 上海中科高等研究院 | CMOS (complementary metal oxide semiconductor) image sensor and a pixel structure thereof |
| CN103296042A (en) * | 2013-05-30 | 2013-09-11 | 豪威科技(上海)有限公司 | Backside-illuminated CMOS (complementary metal oxide semiconductor) image sensor and production method thereof |
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Application publication date: 20190920 |